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Static Switch Refference

The document provides characteristics of various power semiconductor devices including power diodes, thyristors, and transistors. It includes three tables that list technical specifications such as maximum reverse voltage, average forward current, surge current, and forward voltage drop for different device references. The tables provide a side-by-side comparison of key ratings for common power switching components.

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Mark Tambus Jhons
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39 views

Static Switch Refference

The document provides characteristics of various power semiconductor devices including power diodes, thyristors, and transistors. It includes three tables that list technical specifications such as maximum reverse voltage, average forward current, surge current, and forward voltage drop for different device references. The tables provide a side-by-side comparison of key ratings for common power switching components.

Uploaded by

Mark Tambus Jhons
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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STATIC SWITCH REFFERENCE (Power Diodes, Power Thyristors, Power Mosfets, Power Transistors, Power Triac, etc.

Table 1: Characteristics of powers diodes


REFERENCE OF POWER 1N5400 1N5401 1N5402 1N5404 1N5408 BYD13- BY225-100 BY225-200 BYD74- 1N4007 BYV29 BYM56- BYM56-A UNI
DIODES D E A T
VRRM 50 100 200 400 1000 200 100 200 250 1000 400 200 400 V
IAV 3. 0 3. 0 3. 0 3. 0 3. 0 1. 4 4. 8 4. 8 2. 15 1. 0 9 3. 5 3. 5 A
IFSM at (8.5ms) sine wave 200 200 200 200 200 20 100 100 50 35 11 80 80 A
VF at rated average current 1 .20 1 .20 1 .20 1 .20 1 .20 1 .05 1 .15 1 .15 1 .20 1 .10 0 .90 1 .20 1.25 V
* VRRM: maximum recurrent reverse voltage; * IAV: Forward average current; * IFSM: Maximum reccurent surge current at 8. 5ms

Table 2: Characteristics of powers silicon controlled rectifiers (or thyristors)


REFERENCE OF POWER BT151-5 C106-B C106-D C106- TN625-6 TYN816- TYN406- TYN406- BTW49-1 BTW49-2 TYS606-2 TYS806-4 UNIT
THYRISTORS M R 1 4
VRRM 500 200 400 600 600 800 100 400 100 200 200 400 V
IAV 7. 5 2. 55 2. 55 2. 55 10 10 2. 5 2. 5 10 10 3. 8 5. 0 A
ITSM at (8.5ms) ½ sine wave 100 20 20 20 200 200 35 35 100 100 80 80 A
VT at rated average current 1 .22 1 .15 1 .15 1 .20 1 .20 1 .05 1 .15 1 .15 1 .20 1 .10 0 .90 1 .25 V
* VRRM: maximum recurrent reverse voltage; * IAV: Forward average current; * IFSM: Maximum reccurent surge current at 10ms

Table 3: Characteristics of powers silicon controlled rectifiers (or thyristors)


REFERENCE OF POWER TYN406- BTW49- BTW49- TYS606-2 TYS806-1 2N3656 2N3658 BTW30- BTW30- BT151-8 TN625-6 TYN816R UNIT
THYRISTORS 4 1 2 6 8
VRRM 400 100 200 200 100 200 400 600 800 800 600 800 V
IAV 2. 5 10 10 3. 8 5. 0 22. 5 22. 5 16 16 7. 5 10 10 A
ITSM at (8.5ms) ½ sine wave 35 100 100 80 80 200 200 200 200 100 200 200 A
VT at rated average current 1 .12 1 .22 1 .22 1 .13 1 .25 1 .35 1 .35 1 .30 1 .30 1 .20 1 .25 1 .25 V
* VRRM: maximum recurrent reverse voltage; * IAV: Forward average current; * IFSM: Maximum reccurent surge current at 10ms

BY : Mr NKWELLE T

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