Uccx808-X Low Power Current Mode Push-Pull PWM: 1 Features 3 Description

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UCC2808-1, UCC2808-2, UCC3808-1, UCC3808-2


SLUS168E – APR 1999 – REVISED AUGUST 2015

UCCx808-x Low Power Current Mode Push-Pull PWM


1 Features 3 Description
1• Dual Output Drive Stages in Push-Pull The UCCx808-x is a family of BiCMOS push-pull,
Configuration high-speed, low-power, pulse-width modulators. The
UCCx808 contains all of the control and drive circuitry
• 130-μA Typical Starting Current required for offline or DC-to-DC fixed frequency
• 1-mA Typical Run Current current-mode switching power supplies with minimal
• Operation to 1-MHz external parts count.
• Internal Soft-Start The UCCx808-x dual output drive stages are
• On-Chip Error Amplifier With 2-MHz Gain arranged in a push-pull configuration. Both outputs
Bandwidth Product switch at half the oscillator frequency using a toggle
flip-flop. The dead time between the two outputs is
• On-Chip VDD Clamping typically 60 ns to 200 ns depending on the values of
• Output Drive Stages Capable Of 500-mA Peak the timing capacitor and resistors, thus limiting each
Source Current, 1-A Peak Sink Current output stage duty cycle to less than 50%.

2 Applications Device Information(1)


PART NUMBER PACKAGE BODY SIZE (NOM)
• Server and Desktop Power Supplies
UCC2808-1 SOIC (8) 4.90 mm × 3.91 mm
• Telecom Power Supplies UCC2808-2
• DC-DC Converters UCC3808-1 PDIP (8) 9.81 mm × 6.35 mm
UCC3808-2
• Switched-Mode Power Supplies
(1) For all available packages, see the orderable addendum at
the end of the data sheet.

Simplified Schematic
ER28 32CTQ030 VO
8:2
5 V 50 W
+
NP2 NS1 EF25 7µH 680 µF 0.01 µF

+ LOOP B
VIN 4700 µF 0.47 µF BYV BYV NP1 NS2
36 V TO 72 V 28–200 62 Ω 62 Ω 28–200 200 Ω
1000 pF 1000 pF LOOP A
– 51 kΩ COMP
1/4 W
19.1 kΩ
IRF640 12 4700 pF 20 kΩ
IRF640

10 Ω 470 pF
2.2 Ω DF02SGICT
2.2 Ω 1 mH
3
1 TL431
0.1 µF
2
10 µF 0.1 µF 19.1 kΩ
2 kΩ 0.2 Ω 20 kΩ
VDD OUTA OUTB GND
330 pF 8 7 6 5 PRIMARY
GROUND
UCC3808D-1

1 2 3 4 240 Ω
COMP FB CS RC RC

4.99 kΩ

CURRENT
2.80 kΩ 86.6 kΩ SENSE
4.99 kΩ H11A1
2N2907 4 U3 3
20 kΩ
5 2

330 pF 0.1 µF 6 1
432 Ω
0.01 µF
1 kV

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC2808-1, UCC2808-2, UCC3808-1, UCC3808-2
SLUS168E – APR 1999 – REVISED AUGUST 2015 www.ti.com

Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 10
2 Applications ........................................................... 1 8.1 Application Information............................................ 10
3 Description ............................................................. 1 8.2 Typical Application ................................................. 10
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 11
5 Pin Configuration and Functions ......................... 3 10 Layout................................................................... 12
6 Specifications......................................................... 4 10.1 Layout Guidelines ................................................. 12
6.1 Absolute Maximum Ratings ...................................... 4 10.2 Layout Example .................................................... 12
6.2 ESD Ratings.............................................................. 4 11 Device and Documentation Support ................. 13
6.3 Recommended Operating Conditions....................... 4 11.1 Related Links ........................................................ 13
6.4 Electrical Characteristics........................................... 4 11.2 Documentation Support ....................................... 13
6.5 Typical Characteristics .............................................. 6 11.3 Community Resources.......................................... 13
7 Detailed Description .............................................. 7 11.4 Trademarks ........................................................... 13
7.1 Overview ................................................................... 7 11.5 Electrostatic Discharge Caution ............................ 13
7.2 Functional Block Diagram ......................................... 7 11.6 Glossary ................................................................ 13
7.3 Feature Description................................................... 8 12 Mechanical, Packaging, and Orderable
7.4 Device Functional Modes.......................................... 9 Information ........................................................... 13

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision D (August 2002) to Revision E Page

• Removed references to the TSSOP packaging .................................................................................................................... 1


• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1

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5 Pin Configuration and Functions

D Package
8-Pin SOIC
Top View

COMP 1 8 VDD
FB 2 7 OUTA
CS 3 6 OUTB
RC 4 5 GND

P Package
8-Pin PDIP
Top View

OUTA 1 8 OUTB
VDD 2 7 GND
COMP 3 6 RC
FB 4 5 CS

Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
COMP 1 I/O Output of the error amplifier and the input of the PWM comparator.
CS 3 I Input to the PWM, peak current, and overcurrent comparators.
FB 2 I Inverting input to the error amplifier.
GND 5 — Reference ground and power ground for all functions.
OUTA 7 O Alternating high current output stage.
OUTB 6 O Alternating high current output stage.
RC 4 I Oscillator programming pin.
VDD 8 — Power input connection for this device.

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage (IDD ≤ 10 mA) 15 V
Supply current 20 mA
OUTA/OUTB source current (peak) (2) –0.5 A
OUTA/OUTB sink current (peak) (2) 1.0 A
Analog inputs (FB, CS) – 0.3 V to VDD+0.3 V 6 V
Power dissipation at TA = 25 ° C (N Package) 1 W
Power dissipation at T A = 25 ° C (D Package) 650 mW
Power dissipation at T A = 25 ° C (PW Package) 400 mW
TJ Junction temperature –55 150 °C
Lead temperature (soldering, 10 sec.) 300 °C
Tstg Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the Power Supply Control Data Book
(SLUD003) for thermal limitations and considerations of packages.

6.2 ESD Ratings


VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2500
V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22- V
±1500
C101 (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions


over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
UCCx808-1 13 14
VDD Supply Voltage V
UCCx808-2 5 14
UCC2808-x –40 85
TJ Junction Temperature °C
UCC3808-x 0 70

6.4 Electrical Characteristics


TA = 0°C to 70°C for the UCC3808-x, –40°C to 85°C for the UCC2808-x and –55°C to 125°C for the UCC1808-x, VDD = 10
V (1), 1-μF capacitor from VDD to GND, R = 22 kΩ , C = 330 pF, TA = TJ , (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OSCILLATOR SECTION
Oscillator frequency 175 194 213 kHz
Oscillator amplitude/VDD (2) 0.44 0.5 0.56 V/V
ERROR AMPLIFIER SECTION
Input voltage COMP = 2 V 1.95 2 2.05 V
Input bias current –1 1 μA
Open-loop voltage gain 60 80 dB
COMP sink current FB = 2.2 V, COMP = 1 V 0.3 2.5 mA

(1) Does not include current in the external oscillator network.


(2) Measured at RC. Signal amplitude tracks VDD.
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Electrical Characteristics (continued)


TA = 0°C to 70°C for the UCC3808-x, –40°C to 85°C for the UCC2808-x and –55°C to 125°C for the UCC1808-x, VDD = 10
V(1), 1-μF capacitor from VDD to GND, R = 22 kΩ , C = 330 pF, TA = TJ , (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
COMP source current FB = 1.3 V, COMP = 3.5 V –0.25 –0.5 mA
PWM SECTION
Maximum duty cycle Measured at OUTA or OUTB 48% 49% 50%
Minimum duty cycle COMP = 0 V 0%
CURRENT SENSE SECTION
Gain (3) 1.9 2.2 2.5 V/V
(4)
Maximum input signal COMP = 5 V 0.45 0.5 0.55 V
COMP = 3.5 V, CS from 0 to 600
CS to output delay 100 200 ns
mV
CS source current –200 nA
Over current threshold 0.7 0.75 0.8 V
COMP to CS offset CS = 0 V 0.35 0.8 1.2 V
OUTPUT SECTION
OUT low level I = 100 mA 0.5 1 V
OUT high level I = – 50 mA, VDD – OUT 0.5 1 V
Rise time CL = 1 nF 25 60 ns
Fall time CL = 1 nF 25 60 ns
UNDERVOLTAGE LOCKOUT SECTION
(1)
UCCx808-1 11.5 12.5 13.5
Start threshold V
UCCx808-2 4.1 4.3 4.5
Minimum operating voltage after UCCx808-1 7.6 8.3 9
V
start UCCx808-2 3.9 4.1 4.3
UCCx808-1 3.5 4.2 5.1
Hysteresis V
UCCx808-2 0.1 0.2 0.3
SOFT-START SECTION
COMP rise time FB = 1.8 V, rise from 0.5 V to 4 V 3.5 20 ms
OVERALL SECTION
Start-up current VDD < start threshold 130 260 µA
(5) (1)
Operating supply current FB = 0 V, CS = 0 V 1 2 mA
(6)
VDD zener shunt voltage IDD = 10 mA 13 14 15 V
DVCOMP
A= ,0 £ VCS £ 0.4V
(3) Gain is defined by: DVCS 0 v VCS v 0.4 V
(4) Parameter measured at trip point of latch with FB at 0 V.
(5) For UCCx808 – 1, set VDD above the start threshold before setting at 10 V
(6) Start threshold and Zener shunt threshold track one another.

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6.5 Typical Characteristics

1000 14
VDD = 10 V, T = 25°C
12

CT=330pF
CT=100pF
10 IDD With 1 nF
Frequency – kHz

100 Load

IDD – mA
CT=220pF 8

10
CT=1000pF
4
CT=820pF IDD Without
CT=560pF Load
2

0 0
0 50 100 150 200 250 0 200 400 600 800 1000 1200

RT – Timing Resistor – kΩ Oscillator Frequency – kHz

Figure 1. Frequency vs Timing Resistor Figure 2. IDD vs Oscillator Frequency


1.2

1.0
COMP – CS Offset – V

0.8

0.6

0.4

0.2

0
–55 –35 –15 5 25 45 65 85 105 125

Temperature – °C

Figure 3. CS Offset vs Temperature

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7 Detailed Description

7.1 Overview
The UCCx808-x device is a highly-integrated, low power current mode push-pull PWM controller. The controller
employs low starting current, and employs an internal control algorithm that offers accurate static output voltage
regulation against line and load. The UCCx808-x family offers a variety of package temperature range options,
and choice of undervoltage lockout levels. The family has UVLO thresholds and hysteresis options for offline and
battery-powered system.

Table 1. Undervoltage Lockout Levels


PART NUMBER TURN ON THRESHOLD TURN OFF THRESHOLD
UCCx808-1 12.5 V 8.3 V
UCCx808-2 4.3 V 4.1 V

Table 2. Undervoltage Lockout Options


PACKAGED DEVICES
TA = TJ
UVLO OPTION SOIC (D) PDIP (N)
12.5 V/8.3 V UCC2808D-1 UCC2808N-1
–40°C to 85°C
4.3 V/4.1 V UCC2808D-2 UCC2808N-2
12.5 V/8.3 V UCC3808D-1 UCC3808N-1
0°C to 70°C
4.3 V/4.1 V UCC3808D-2 UCC3808N-2

7.2 Functional Block Diagram

FB COMP CS
2 1 3

8 VDD
OVERCURRENT 22 k Ω PEAK CURRENT
COMPARATOR 14 V
COMPARATOR

0.75 V
2.0 V 0.5 V
2.2 V
7 OUTA
VDD OK OSCILLATOR
S
Q
PWM
R LATCH
1.2R Q
S
VDD–1 V S T
Q
Q Q
R
R PWM
COMPARATOR
0.5 V VDD

R
SOFT START 6 OUTB
VOLTAGE
REFERENCE
SLOPE = 1 V/ms

5 GND

4
RC

Pinout shown is for SOIC and PDIP packages.

Figure 4. Functional Block Diagram

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Functional Block Diagram (continued)

The oscillator generates a sawtooth waveform on RC. During the RC rise time, the output stages alternate on time,
but both stages are off during the RC fall time. The output stages switch at ½ the oscillator frequency, with
guaranteed duty cycle of <50% for both outputs.

Figure 5. Block Diagram for Oscillator

7.3 Feature Description


7.3.1 Pin Descriptions
COMP: COMP is the output of the error amplifier and the input of the PWM comparator. The error amplifier in the
UCC3808 is a true low-output impedance, 2-MHz operational amplifier. As such, the COMP pin can both source
and sink current. However, the error amplifier is internally current limited, so that zero duty cycle can be
externally forced by pulling COMP to GND.
The UCC3808 family features built-in full cycle soft-start. Soft-start is implemented as a clamp on the maximum
COMP voltage.
CS: The input to the PWM, peak current, and overcurrent comparators. The overcurrent comparator is only
intended for fault sensing. Exceeding the overcurrent threshold will cause a soft-start cycle.
FB: The inverting input to the error amplifier. For best stability, keep FB lead length as short as possible and FB
stray capacitance as small as possible.
GND: Reference ground and power ground for all functions. Due to high currents, and high frequency operation
of the UCC3808, a low impedance circuit board ground plane is highly recommended.
OUTA and OUTB: Alternating high current output stages. Both stages are capable of driving the gate of a power
MOSFET. Each stage is capable of 500-mA peak source current, and 1-A peak sink current.
The output stages switch at half the oscillator frequency, in a push/pull configuration. When the voltage on the
RC pin is rising, one of the two outputs is high, but during fall time, both outputs are off. This dead time between
the two outputs, along with a slower output rise time than fall time, insures that the two outputs can not be on at
the same time. This dead time is typically 60 ns to 200 ns and depends upon the values of the timing capacitor
and resistor.
The high-current output drivers consist of MOSFET output devices, which switch from VDD to GND. Each output
stage also provides a very low impedance to overshoot and undershoot. This means that in many cases, external
schottky clamp diodes are not required.
RC: The oscillator programming pin. The oscillator of the UCC3808-x tracks VDD and GND internally, so that
variations in power supply rails minimally affect frequency stability. Figure 5 shows the oscillator block diagram.
Only two components are required to program the oscillator: a resistor (tied to the VDD and RC), and a capacitor
(tied to the RC and GND). The approximate oscillator frequency is determined by the simple formula:

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Feature Description (continued)


1.41
fOSCILLATOR =
RC
where
• frequency is in hertz, resistance in ohms, and capacitance in farads. (1)
The recommended range of timing resistors is between 10 kΩ and 200 kΩ and range of timing capacitors is
between 100 pF and 1000 pF. Timing resistors less than 10 kΩ must be avoided.
For best performance, keep the timing capacitor lead to GND as short as possible, the timing resistor lead from
VDD as short as possible, and the leads between timing components and RC as short as possible. Separate
ground and VDD traces to the external timing network are encouraged.
VDD: The power input connection for this device. Although quiescent VDD current is very low, total supply
current will be higher, depending on OUTA and OUTB current, and the programmed oscillator frequency. Total
VDD current is the sum of quiescent VDD current and the average OUT current. Knowing the operating
frequency and the MOSFET gate charge (Qg), average OUT current can be calculated from:
IOUT = Qg F
where
• F is frequency To prevent noise problems, bypass VDD to GND with a ceramic capacitor as close to the chip
as possible along with an electrolytic capacitor. (2)
A 1-μF decoupling capacitor is recommended.

7.4 Device Functional Modes


7.4.1 VCC
When VCC becomes above 12.5 V (for UCCx808-1) or 4.3 V (for UCCx808-2), the device is enable, and after all
fault conditions are cleared, the gate driver starts with soft-start. When VCC drops below 8.3 V (for UCCx808-1)
or 4.1 V (for UCCx808-2), the device enters the UVLO protection mode and both gate drivers are actively pulled
low.

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information


The UCCx808-x PWM controller contains all of the features needed to implement push-pull topology, using
current-mode control in a small 8-pin package. The UCCx808-x is designed for current-mode control push-pull
topology. UCCx808-x employs advantages of current-mode control, peak current sense, overcurrent protection.

8.2 Typical Application


A 200-kHz push-pull application circuit with a full wave rectifier is shown in Figure 6.
ER28 32CTQ030 VO
8:2
5 V 50 W
+
NP2 NS1 EF25 7µH 680 µF 0.01 µF

+ LOOP B
VIN 4700 µF 0.47 µF BYV BYV NP1 NS2
36 V TO 72 V 28–200 62 Ω 62 Ω 28–200 200 Ω
1000 pF 1000 pF LOOP A
– 51 kΩ COMP
1/4 W
19.1 kΩ
IRF640 12 4700 pF 20 kΩ
IRF640

10 Ω 470 pF
2.2 Ω DF02SGICT
2.2 Ω 1 mH
3
1 TL431
0.1 µF
2
10 µF 0.1 µF 19.1 kΩ
2 kΩ 0.2 Ω 20 kΩ
VDD OUTA OUTB GND
330 pF 8 7 6 5 PRIMARY
GROUND
UCC3808D-1

1 2 3 4 240 Ω
COMP FB CS RC RC

4.99 kΩ

CURRENT
2.80 kΩ 86.6 kΩ SENSE
4.99 kΩ H11A1
2N2907 4 U3 3
20 kΩ
5 2

330 pF 0.1 µF 6 1
432 Ω
0.01 µF
1 kV

Figure 6. Typical Application Diagram: 48-V In, 5-V, 50-W Output

8.2.1 Design Requirements


Table 3 lists the design parameters of the UCC3808-x.

Table 3. Design Parameters


DESIGN PARAMETER TARGET VALUE
Output voltage 5V
Rated output power 50 W
Input DC voltage range 36 V to 72 V
Switching frequency 210 kHz

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8.2.2 Detailed Design Procedure


The output, VO, provides 5 V at 75 W maximum and is electrically isolated from the input. Since the UCC3808 is
a peak current mode controller the 2N2222A emitter following amplifier (buffers the CT waveform) provides slope
compensation which is necessary for duty ratios greater than 50%. Capacitor decoupling is very important with a
single ground IC controller, and a 1 μF is suggested as close to the IC as possible. The controller supply is a
series RC for start-up, paralleled with a bias winding on the output inductor used in steadystate operation.
Isolation is provided by an optocoupler with regulation done on the secondary side using the UC3965 Precision
Reference with Low Offset Error Amplifier. Small signal compensation with tight voltage regulation is achieved
using this part on the secondary side. Many choices exist for the output inductor depending on cost, volume, and
mechanical strength. Several design options are iron powder, molypermalloy (MPP), or a ferrite core with an air
gap as shown here. The main power transformer is a low profile design, EFD size 25, using Magnetics Inc. P
material which is a good choice at this frequency and temperature. The input voltage may range from 36 V DC to
72 V DC.

8.2.3 Application Curves

90 180 120

80 160 CT=1000pF

100
70 140 CT=820pF
Phase Margin - Degrees

80
60 120

Dead Time – ns
CT=560pF
Phase
Gain dB

50 100
60
40 80

30 60 40 CT=330pF
CT=220pF
CT=100pF
20 40
20
10 Gain 20

0 0 0
1 100 10000 1000000 0 20 40 60 80 100
Frequency – Hz RT – Timing Resistor – kΩ
Figure 7. Error Amplifier Gain and Phase Response vs Figure 8. Dead Time vs Timing Resistor
Frequency

9 Power Supply Recommendations


The VDD power terminal for the device requires the placement of electrolytic capacitor as energy storage
capacitor, because of UCCx808-x is controller with 1-A driver capability. And requires the placement of low-ESR
noise-decoupling capacitance as directly as possible from the VDD terminal to the GND terminal, ceramic
capacitors with stable dielectric characteristics over temperature are recommended, such as X7R or better. The
recommended electrolytic capacitor is a 10-µF or 25-V capacitor.
The recommended decoupling capacitors are a 0.1-µF 0603-sized 25-V X7R capacitor.

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10 Layout

10.1 Layout Guidelines


1. Locate the VDD capacitor as close as possible between the VDD terminal and GND of the UCCx808-x,
tracked directly to both terminals.
2. A small, external filter capacitor is recommended on the CS terminal. Track the filter capacitor as directly as
possible from the CS to GND terminal.
3. The tracking and layout of the FB terminal and connecting components is critical to minimizing noise pick-up
and interference in the magnetic sensing block. Reduce the total surface area of trances on the FB net to a
minimum.
4. The OUTA/OUTB terminal has high internal sink/source current capability. An external gate resistor is
recommended. The value depends on the choice of power MOSFET, efficiency and EMI considerations. A
pulldown resistor on the gate of the external MOSFET is recommended to prevent the MOSFET gate from
floating on if there is an open-circuit error in the gate drive path.

10.2 Layout Example


SOIC-8
PDIP-8
TOP VIEW

1 COMP VDD 8

2 FB OUTA 7

3 CS OUTB 6

4 RC GND 5

Figure 9. Layout Example

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11 Device and Documentation Support

11.1 Related Links


The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.

Table 4. Related Links


TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
UCC2808-1 Click here Click here Click here Click here Click here
UCC2808-2 Click here Click here Click here Click here Click here
UCC3808-1 Click here Click here Click here Click here Click here
UCC3808-2 Click here Click here Click here Click here Click here

11.2 Documentation Support


11.2.1 Related Documentation
For related documentation, see the following:
Power Supply Control Data Book (SLUD003)

11.3 Community Resources


The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information


The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Copyright © 1999–2015, Texas Instruments Incorporated Submit Documentation Feedback 13


Product Folder Links: UCC2808-1 UCC2808-2 UCC3808-1 UCC3808-2
PACKAGE OPTION ADDENDUM

www.ti.com 14-Oct-2022

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

UCC2808D-1 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-1 Samples

UCC2808D-1G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-1 Samples

UCC2808D-2 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-2 Samples

UCC2808D-2G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-2 Samples

UCC2808DTR-1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-1 Samples

UCC2808DTR-2 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-2 Samples

UCC2808DTR-2G4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2808-2 Samples

UCC3808D-1 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3808-1 Samples

UCC3808D-2 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3808-2 Samples

UCC3808DTR-1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 (3808-1, UCC3808) Samples
D-1
UCC3808DTR-2 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3808-2 Samples

UCC3808DTR-2G4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3808-2 Samples

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

Addendum-Page 1
PACKAGE OPTION ADDENDUM

www.ti.com 14-Oct-2022

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
PACKAGE MATERIALS INFORMATION

www.ti.com 28-Sep-2022

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS


K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)


QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal


Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
UCC2808DTR-1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UCC2808DTR-2 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UCC3808DTR-1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UCC3808DTR-2 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com 28-Sep-2022

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal


Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
UCC2808DTR-1 SOIC D 8 2500 340.5 336.1 25.0
UCC2808DTR-2 SOIC D 8 2500 340.5 336.1 25.0
UCC3808DTR-1 SOIC D 8 2500 340.5 336.1 25.0
UCC3808DTR-2 SOIC D 8 2500 340.5 336.1 25.0

Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION

www.ti.com 28-Sep-2022

TUBE

T - Tube
height L - Tube length

W - Tube
width

B - Alignment groove width

*All dimensions are nominal


Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
UCC2808D-1 D SOIC 8 75 507 8 3940 4.32
UCC2808D-1G4 D SOIC 8 75 507 8 3940 4.32
UCC2808D-2 D SOIC 8 75 507 8 3940 4.32
UCC2808D-2G4 D SOIC 8 75 507 8 3940 4.32
UCC3808D-1 D SOIC 8 75 507 8 3940 4.32
UCC3808D-2 D SOIC 8 75 507 8 3940 4.32

Pack Materials-Page 3
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1

.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]

4X (0 -15 )

4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4

.005-.010 TYP
[0.13-0.25]

4X (0 -15 )

SEE DETAIL A
.010
[0.25]

.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.

www.ti.com
EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]

LAND PATTERN EXAMPLE


EXPOSED METAL SHOWN
SCALE:8X

SOLDER MASK SOLDER MASK


METAL METAL UNDER
OPENING OPENING SOLDER MASK

EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK


DEFINED DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.


7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55] SYMM

1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]

SOLDER PASTE EXAMPLE


BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
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