Bga Sad Data Sheet
Bga Sad Data Sheet
Features • Reliability
– MTTF: 3 million hours4
• Micron® 3D TLC NAND Flash – Static and dynamic wear leveling
• PCIe Express base specification Rev 3.0 – Uncorrectable bit error rate (UBER): <1 sector
– Gen3 x4 lanes per 1016 bits read
– Backward Compatibility • Micron redundant array of independent NAND
• NVMe Express Rev 1.3c compliant (RAIN) technology
– Number of namespaces supported: Up to 4
– Round robin arbitration: weighted Options Marking
– Autonomous power state transitions • Form Factor
– Host memory buffer (HMB) – BGA type 1620, 16mm x 20mm x BL
– Boot partitions and RPMB 1.2mm
– End-to-end data protection – BGA type 1620, 16mm x 20mm x BM
• Retention JESD47 compliant: 1.6mm
– 5 years @55°C at 10% of TBW – M.2 type 2230, 22mm x 30mm BK
– 1 year @55°C at max TBW • Density
• Package compliance: – 64GB
– RoHS certification – 128GB 128
– BGA, MSL3 – 256GB 256
• Capacity (unformatted)1: 64GB, 128GB, 256GB, – 512GB 512
512GB, 1024GB – 1TB 1T0
• Physical capacity management (SLC mode) • Product Family
• Endurance: Total bytes written (TBW) – 2100AI DP
– Up to 480TB for 1024GB • BOM
• Security – 1st Generation 1
– TCG/Opal 2.0 compliant self-encrypting drive – Engineering Samples A
(SED) • Operating Temperature 5
– Hardware-based AES-256 encryption engine – Grade 3 extended (–40°C to +95°C) IT
– Digitally signed firmware • Customer Designator
– Firmware secure boot – Standard YY
• Self-monitoring, analysis, and reporting technology
(SMART) command set Notes: 1. User capacity: 1GB = 1 billion bytes.
• Power loss protection for data-at-rest 2. Typical I/O performance numbers as meas-
• Performance2 ured fresh-out-of-box (FOB) with HMB ena-
– Sequential 128KB READ: Up to 2000 MB/s bled.
– Sequential 128KB WRITE: Up to 1800 MB/s 3. 4KB, queue depth 1 transfers used for
– Random 4KB READ: Up to 200,000 IOPS READ/WRITE latency values.
– Random 4KB WRITE: Up to 130,000 IOPS 4. Mean Time To Failure (MTTF) based on pop-
• Latency3 ulation statistics not relevant to individual
– Read (TYP): 85µs units.
– Write (TYP): 40µs 5. Case surface temperature.
• Host-controlled thermal management
• Low power consumption
– Sleep: 3mW/5mW (PS4 & L1.2) BGA/M.2
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Products and specifications discussed herein are subject to change by Micron without notice.
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General Description
Micron’s 2100AI solid state drive (SSD) uses a single-chip controller with a PCIe Gen3
interface connecting up to four PCIe lanes to Micron’s 3D TLC NAND Flash.
The SSD is designed to use the PCIe interface efficiently during both READs and
WRITEs while delivering bandwidth-focused, low latency performance through the in-
novative Nonvolatile Memory Express protocol. SSD technology enables enhanced boot
times, faster application load times, reduced power consumption, and extended relia-
bility.
The 2100AI is ideally suited for industrial applications, which require mass storage in a
very small footprint.
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Performance
Measured performance can vary for a number of reasons. The major factors affecting
drive performance are the capacity of the drive and the interface of the host. Addition-
ally, overall system performance can affect the measured drive performance. When
comparing drives, it is recommended that all system variables are the same, and only
the drive being tested varies.
Performance numbers vary depending on the host system configuration.
For SSDs designed for the client and cloud computing markets, Micron specifies per-
formance in fresh-out-of-box (FOB) state and steady state. Data throughput measured
in steady state may be lower than FOB state, depending on the nature of the data work-
load.
For a description of these performance states and of Micron's best practices for per-
formance measurement, refer to Micron's technical marketing brief Best Practices for
SSD Performance Measurement.
Notes: 1. Performance values measured in fresh-out-of-box (FOB) state using FIO with a queue
depth of 32.
2. Drive write cache enabled.
3. NVMe power state 0.
4. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
5. 4KB transfers can be further improved with the support of HMB by the host.
6. System variations will affect measured results.
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Note: Look at Physical Capacity Management (page 9) Section for more options rela-
ted to SLC Vs. TLC configurations
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Reliability
Micron’s SSDs incorporate advanced technology for defect and error management. We
use various combinations of hardware-based error correction algorithms and firmware-
based static and dynamic wear-leveling algorithms.
Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is de-
fined as data that is reported as successfully programmed to the SSD but when it is read
out of the SSD, the data differs from what was programmed.
Table 5: MTTF
Note: 1. The mean time to failure (MTTF) reported in the above table is based on population sta-
tistics. Therefore, it is not relevant to individual unit.
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Endurance
Endurance for the SSD can be predicted based on the usage conditions applied to the
device. The table shows the minimum drive lifetime for each SSD capacity based on
predefined usage conditions noted below.
Notes: 1. Total bytes written validated with the drive 90% full.
2. SSD volatile write cache is enabled.
3. Access patterns used during reliability testing are 25% sequential and 75% random and
consist of the following: 1% are 512B; 44% are 4 KiB; 35% are 64 KiB; and 20% are
128 KiB.
4. Host workload parameters, including write cache settings, I/O alignment, transfer sizes,
randomness, and percent full, that are substantially different than the described notes
may result in varied endurance results.
5. GB/day can be calculated by dividing the total bytes written value by (365 × number of
years). For example: 100TB/5 years/365 days = 54GB/day for 5 years.
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Endurance
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Performance
For SSDs designed for the client and cloud computing markets, Micron specifies per-
formance in fresh-out-of-box (FOB) state and steady state. Data throughput measured
in steady state may be lower than FOB state, depending on the nature of the data work-
load.
For a description of these performance states and of Micron's best practices for per-
formance measurement, refer to Micron's technical marketing brief Best Practices for
SSD Performance Measurement.
Table 11: Drive Performance With/Without HMB Enabled (SLC Mode=100%) – Fresh Out of Box
Notes: 1. Performance values measured in fresh-out-of-box (FOB) state using FIO with a queue
depth of 32.
2. Drive write cache enabled.
3. NVMe power state 0.
4. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
5. 4KB transfers can be further improved with the support of HMB by the host.
6. System variations will affect measured results.
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BGA Type
Notes: 1. Active reads/actives write power is an average power measurement performed using FIO
with 128KB sequential read/write transfers respectively.
2. For power states 3 and power state 4 average power measurements, the PCIe state is set
to L1.2 link state.
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Notes: 1. Operating temperature is the case surface temperature at the center of the top side of
the device.
2. Temperature is measured by SMART. Sensor temperature represents the TJ of the SSD
micro-controller. The reported temperature is expected to be sightly greater than Oper-
ating temperature TC. The temperature difference will be highest at heavy workload
and without air-flow.
3. If SMART temperature (Log Identifier 02h) exceeds 115°C, performance will be throttled.
Sensor temperature range has been characterised on limited samples.
4. Refer to TN-00-08 for method and the criteria to ensure that the memory operates be-
low its maximum allowable temperature.
5. Refer to TN-FD-50: 2100AT Power Supply Electrical Requirements for further information
about power on/off and power cycle requirements.
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M.2 Type
Notes: 1. Active reads/active writes power is an average power measurement performed using FIO
with 128KB sequential read/write transfers.
2. For Power States 3 and 4 average power measurements, the PCIe is set to L1.2 link state.
Notes: 1. Operating temperature is the case surface temperature at the center of the top side of
the device.
2. If SMART temperature (log identifier 02h) exceeds 115°C, performance will be throttled.
3. Temperature is measured by SMART. Sensor temperature range has been characterised
on limited samples.
Parameter/Condition Specification
Non-operating shock 1500G @ 0.5ms half sine
Non-operating vibration Random vibration 7-2000Hz
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Bits Description
15:0 Maximum Power (MP): This field indicates the maximum power consumed by the NVM subsystem in this
power state. The power in Watts is equal to the value in this field multiplied by the scale specified in the
Maximum Power Scale field.
23:16 Reserved
24 Max Power Scale (MPS): This field indicates the scale for the Maximum Power field. If this field is cleared
to 0, then the scale of the Maximum Power field is in 0.01 Watts. If this field is set to 1, then the scale of the
Maximum Power field is in 0.0001 Watts.
25 Non-Operational State (NOPS): This field indicates whether the controller processes I/O commands in this
power state. If this field is cleared to 0, then the controller processes I/O commands in this power state. If
this field is set to 1, then the controller does not process I/O commands in this power state.
31:26 Reserved
63:32 Entry Latency (ENLAT): This field indicates the maximum entry latency in microseconds associated with
entering this power state.
95:64 Exit Latency (EXLAT): This field indicates the maximum exit latency in microseconds associated with exit-
ing this power state.
100:96 Relative Read Throughput (RRT): This field indicates the relative read throughput associated with this
power state. A lower value means higher read throughput.
103:101 Reserved
108:104 Relative Read Latency (RRL): This field indicates the relative READ latency associated with this power
state. A lower value means lower READ latency.
111:109 Reserved
116:112 Relative Write Throughput (RWT): This field indicates the relative write throughput associated with this
power state. A lower value means higher write throughput.
119:117 Reserved
124:120 Relative Write Latency (RWL): This field indicates the relative WRITE latency associated with this power
state. A lower value means lower WRITE latency.
127:125 Reserved
143:128 Idle Power (IDLP): This field indicates the typical power consumed by the NVM subsystem over 30 seconds
in this power state when idle. The measurement starts after the NVM subsystem has been idle for 10 sec-
onds. The power in Watts is equal to the value in this field multiplied by the scale indicated in the Idle Pow-
er Scale field.
149:144 Reserved
151:150 Idle Power Scale (IPS): This field indicates the scale for the Idle Power field.
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Bits Description
159:152 Reserved
175:160 Active Power (ACTP): This field indicates the largest average power consumed by the NVM subsystem over
a 10 second period in this power state with the workload indicated in the Active Power Workload field. The
power in Watts is equal to the value in this field multiplied by the scale indicated in the Active Power Scale
field.
178:176 Active Power Workload (APW): This field indicates the workload used to calculate maximum power for
this power state.
181:179 Reserved
183:182 Active Power Scale (APS): This field indicates the scale for the Active Power field.
255:184 Reserved
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This field defines the number of supported LBA data sizes supported by the namespace. This
is a 0's based value.
26 00000000b Formatted LBA Size (FLBAS): This field indicates the LBA data size that the namespace
has been formatted with.
Bits 7:5 are reserved
Bit 4 = 0 the controller does not support metadata
Bits 3:0 = 0. Indicates one of the 2 supported LBA formats indicated in this data structure.
27 0 Metadata Capabilities (MC): Metadata Capabilities is not supported.
28 0 End-to-end Data Protection Capabilities (DPC): End-to-end Data Protection Capabilities
is not supported.
29 0 End-to-end Data Protection Type Settings (DPS): End-to-end Data Protection Type Set-
tings is not supported.
30 0 Namespace Multi-path I/O and Namespace Sharing Capabilities (NMIC): Namespace
Multi-path I/O and Namespace Sharing Capabilities is not supported.
31 0 Reservation Capabilities (RESCAP): Reservation Capabilities field is not supported.
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Interface Signals
BGA Type
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
A DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU
B DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU
UART_
D REFCLKp REFCLKn DNU
GND PERST# CLKREQ# PWR_1 PWR_1 GND DNU RFU RFU
DLorem ipsum RX
UART_
E GND GND GND GND GND GND GND DNU PWR_1 PWR_1 GND DNU GND GND DNU DNU DNU
TX
G GND GND GND GND GND PWR_3 PWR_3 GND GND PWR_3 PWR_3 GND GND DNU DNU DNU
H PETp0 PETn0 PWR_3 PWR_3 GND GND PWR_3 PWR_3 RFU PLN#
J GND GND GND GND GND PWR_3 PWR_3 GND GND PWR_3 PWR_3 GND GND DNU DNU DNU
K PERp1 PERn1 GND GND GND GND GND GND RFU PLA#
JTAG_
L GND GND GND GND GND RFU RFU RFU RFU RFU RFU GND GND DNU DNU
TRST#
M PETp1 PETn1 RFU RFU GND GND RFU RFU RFU RFU
JTAG_ JTAG_
N GND GND GND GND GND RFU RFU RFU RFU RFU RFU GND GND DNU
TCK TMS
P PERp2 PERn2 GND GND GND GND GND GND RFU RFU
JTAG_ JTAG_
R GND GND GND GND GND PWR_2 PWR_2 GND GND PWR_2 PWR_2 GND GND DNU
TDI TDO
T PETp2 PETn2 PWR_2 PWR_2 GND GND PWR_2 PWR_2 RFU RFU
U GND GND GND GND GND PWR_2 PWR_2 GND GND PWR_2 PWR_2 GND GND DNU DNU DNU
W GND GND GND GND GND GND LED_1# RFU PWR_1 PWR_1 GND RFU RFU GND GND DNU DNU DNU
Y PETp3 PETn3 GND DNU DNU PWR_1 PWR_1 GND DNU GND DNU DNU
AA GND GND GND GND GND DNU DNU DNU DNU DNU DNU DNU DNU GND GND DNU DNU DNU
AB DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU
AC DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU
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Notes: 1. Engineering test signal should be routed to a test point pad. They are not intended for
customer use since they have controlled access to insure security of data
2. RFU signals are reserved for future use. These balls shall be soldered to a platform
board, but shall be electrically no-connect on the host or the module
3. DNU signals are for manufacturing only. These balls shall be soldered to a platform
board, but shall be electrically no-connect on the host or the module
4. Power domain (1.8V) is internally generated by an LDO
5. Each PCIe in-band signal (PETxy/PERxy) requires AC coupling capacitance (75nF–500nF)
close to the transmitter
6. We recommend to make a design compatible with both 3.3V and 1.8V.
7. We recommend to make a design compatible with 2.5V for next generation SSD.
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Interface Connectors
M.2 Type
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Commands
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Log Pages
The SSD supports log information as defined in the NVMe specification. Supported in-
formation is shown in the following tables:
• Error Information (Log Identifier 01h)
• SMART/Health Information (Log Identifier 02h)
• Firmware Slot Information (Log Identifier 03h)
• Commands Supported and Effects (Log Identifier 05h)
• Device Self-Test Log (Log Identifier 06h)
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TCG/Opal Support
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IEEE1667
Probe Silo Supported –
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PCI Header
End
Start Ad- Default
Address dress Symbols Register Definition Bits Type Value Description
00h 03h ID Identifiers 31:16 RO 6001h Device ID (DID)
0:15 RO 1344h Vendor ID (VID)
04h 05h CMD Command Register 15:11 RO 0 Reserved
10 RW 0 Interrupt Disable
9 RO 0 Fast Back-to-Back Enable
8 RW 0 SERR# Enable
7 RO 0 IDSEL Stepping/Wait Cycle Control
6 RW 0 Parity Error Response Enable
5 RO 0 VGA Palette Snooping Enable
4 RO 0 Memory Write and Invalidate Enable
3 RO 0 Special Cycle Enable
2 RW 0 Bus Master Enable
1 RW 0 Memory Space Enable
0 RW 0 I/O Space Enable
06h 07h STS Device Status 15 RW1 0 Detected Parity Error
C
14 RW1 0 Signaled System Error
C
13 RW1 0 Received Master Abort
C
12 RW1 0 Received Target Abort
C
11 RW1 0 Signaled Target Abort
C
10:9 RO 0 DEVSEL Timing
7 RO 0 Master Data Parity Error Detected
8 RW1 0 Fast Back-to-Back Transaction Capa-
C ble
6 RO 0 Reserved
5 RO 0 66MHz Capable
4 RO 0 Capabilities List
3 RO 0 Interrupt Status
2:1 RO 0 Reserved
0 RO 0 Reserved
08h 08h RID Revision ID 7:10 RO 0 Controller Hardware Revision ID
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End
Start Ad- Default
Address dress Symbols Register Definition Bits Type Value Description
09h 0Bh CC Class Codes 23:16 RO 1h Base Class Code
15:8 RO 8h Sub Class Code
7:0 RO 2h Programming Interface
0Ch 0Ch CLS Cache Line Size 7:0 RO 0 N/A
0Dh 0Dh MLT Master Latency Timer 7:0 RO 0 N/A
0Eh 0Eh HTYPE Header Type 7 RO 0 Multi-Function Device
6:0 RO 0 Reserved
0Fh 0Fh BIST Built in Self Test 7:0 RO 0 Not Supported
10h 13h MLBAR Memory Register Base 31:14 RW 0 Base Address
(BAR0) Address (lower 32-bit) 13:4 RO 0 Reserved
3 RO 0 Pre-Fetchable
2:1 RO 2h Address Type (64-bit)
0 RO 0 Memory Space Indicator (MEMSI)
14h 17h MUBAR Memory Register Base 31:0 RO 0 Base Address
(BAR1) Address (upper 32-bit)
18h 1Bh IDBAR Index/Data Pair Register 31:0 RO 0 Not Supported
(BAR2) Base Address
1Ch 1Fh BAR3 BAR3 Register 31:0 RO 0 Reserved
20h 23h BAR4 BAR4 Register 31:0 RO 0 Vendor Specific
24h 27h BAR5 Vendor Specific BAR5 31:0 RO 0 Vendor Specific
28h 2Bh CCPTR CardBus CIS Pointer 31:0 RO 0 N/A
2Ch 2Fh SS Subsystem Identifiers 31:16 RO See ta- Subsystem ID (SSID)
ble be-
low
15:0 RO 1344h Subsystem Vendor ID (SSVID)
30h 33h EXPROM Expansion ROM Base Ad- 31:17 RW 0 Expansion ROM Base Address
dress 16:1 RO 0 Reserved
0 RW 0 Expansion ROM Enable/Disable
34h 34h CAP Capabilities Pointer 7:0 RO 0 N/A
35h 3Bh R Reserved
3Ch 3Dh INTR Interrupt Information 15:8 RO 01h Interrupt Pin
7:0 RW FFh Interrupt Line
3Eh 3Eh MGNT Minimum Grant 7:0 RO 0 N/A
3Fh 3Fh MLAT Maximum Latency 7:0 RO 0 N/A
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42 Micron Technology, Inc. reserves the right to change products or specifications without notice.
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Micron Confidential and Proprietary
Figure 5: BGA Type 1620 – 291-Ball 16mm x 20mm x 1.2mm (Package Code BL)
Seating plane
A 0.1 A
A
B
C
D
E
F
G
H
J
K
L
17.6
M
CTR N
P
R
20 ±0.1 T
U
V
W
Y
AA
AB
0.8 TYP
AC
16 ±0.1
44X 0.45X0.45 square test pads.
Ni/Au plated on pitch.
No solder balls.
2100AI_nvme_ssd_tsm086_revC.pdf - 05/20 EN
43 Micron Technology, Inc. reserves the right to change products or specifications without notice.
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Micron Confidential and Proprietary
Figure 6: BGA Type 1620 – 291-Ball 16mm x 20mm x 1.6mm (Package Code BM)
Seating plane
A 0.1 A
A
B
C
D
E
F
G
H
J
K
L
17.6
M
CTR N
P
R
20 ±0.1 T
U
V
W
Y
AA
AB
0.8 TYP
AC
16 ±0.1
44X 0.45X0.45 square test pads.
Ni/Au plated on pitch.
No solder balls.
2100AI_nvme_ssd_tsm086_revC.pdf - 05/20 EN
44 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2019 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
Pin 1
W ±0.15
Pin 75
L ±0.15
A MAX
C MAX
B ±0.08
2100AI_nvme_ssd_tsm086_revC.pdf - 05/20 EN
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Micron Confidential and Proprietary
FCC Rules
This equipment has been tested and found to comply with the limits for a Class B digital
device, pursuant to part 15 of the FCC Rules. These limits are designed to provide rea-
sonable protection against harmful interference in a residential installation. This equip-
ment generates, uses, and can radiate radio frequency energy and, if not installed and
used in accordance with the instructions, may cause harmful interference to radio com-
munications. However, there is no guarantee that interference will not occur in a partic-
ular installation. If this equipment does cause harmful interference to radio or televi-
sion reception, which can be determined by turning the equipment off and on, the user
is encouraged to try to correct the interference by one or more of the following meas-
ures:
• Reorient or relocate the receiving antenna.
• Increase the separation between the equipment and the receiver.
• Connect the equipment into an outlet on a circuit different from that to which the re-
ceiver is connected.
• Consult the dealer or an experienced radio/TV technician for help.
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46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2019 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
References
• NVM Express, Revision 1.3
• PCI Express Base Specification, Revision 3.0
• PCI Express Electromechanical Specification, PCI EXpress M.2 Specification Revision
1.1
• PCI-SIG Engineering Change Notice: Power Loss Notification Functions (Mar. 26,
2018)
• PCI-SIG Engineering Change Notice: 1.8V sideband, Power Loss Notification, USB 2.0,
and higher power support (Nov. 28, 2018). To be considered for forward compatibility
• TCG Storage Architecture Core Specification Version 2.01 Revision 1.00
• TCG Storage Security Subsystem Class: Opal Specification Version 2.01 Revision 1.00
• TCG Storage Security Subsystem Class: Pyrite Specification Version 1.00 Revision 1.00
• IDEMA Standard LBA 1-03
• JEDEC Standard, Integrated Circuits Thermal Test Method Environmental Conditions
JESD51-2A
• For further information like technical notes and white papers on automotive and in-
dustrial Micron SSD, periodically check www.micron.com
2100AI_nvme_ssd_tsm086_revC.pdf - 05/20 EN
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© 2019 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
Revision History
Rev. C - 05/20
• Updated Table: Operating Ratings
– Changed PWR_1 range for BGA
– Specified "Ambient" for "Rate of temperature change" and "Non-operating temper-
ature" for both BGA and M.2 form factor
• Updated Notes in Table: Maximum Current per Power Rail.
• Updated Table: BGA Signal Description. In-Band-Signals type are now specified if
they are Input (I) or Output (O); CLKREQ# type changed from Input/Output (I/O) to
Open Drain (OD)
• Added Table: Drive Performance With/Without HMB Enabled (SLC Mode=100%) –
Fresh Out of Box
• Minor editorial changes
Rev. B - 12/19
• Data Sheet maturity level changed from Preliminary to Production; Preliminary has
been removed on the top right corner of each page
• Added 64GB Micron Part Number for BGA package
• Updated Table: BGA Signal Description. Note no.6 include PWR_1 recommendation
for future SSD (from 3.3V to 2.5V)
• Updated Table: M.2 Signal Assignments. Added LED_1#, UART_RX and UART_TX
• MTTF updated to 3 million.
• Renamed Table: Maximum Ratings into Operating Ratings. Sensor temperature sym-
bol changed
• Removed Table: Drive Performance With/Without HMB Enabled – Steady State. The
server workload condition for performance calculation does not apply to 2100AI/AT
SSD.
Rev. A - 11/19
• Power domain for PLN#/PLA# is changed to 3.3V on BGA. Ensure design correctness
for your board schematics. For further information search for TN-FD-47 2100AI_AT
PCIe Schematics Reference Design Technical Note at http://www.micron.com
• Added a new table for BGA: Maximum Current per Power Rail.
• Updated Section: Identify Controller Data Structure.
• Updated Table: Maximum Ratings.
• Updated Section: Commands.
• Updated Section: Log Pages.
• Updated Section: TCG/Opal Support.
• Updated Section: Identify – Identify Namespace Data Structure.
• Added Section: PCI Header.
• Updated Table: Drive Performance With/Without HMB Enabled – Fresh Out of Box.
• Updated Table: Drive Performance With/Without HMB Enabled – Steady State.
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Micron Confidential and Proprietary
Pre-Release 04/19
• All details subject to change
2100AI_nvme_ssd_tsm086_revC.pdf - 05/20 EN
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© 2019 Micron Technology, Inc. All rights reserved.