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    VL2021220505858 Da02 PDF

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    D Chinmay
    This document contains a list of 5 questions regarding electronics materials and devices on a winter semester exam. Question 1 involves calculating Fermi levels, drawing an energy band diagram, and determining the barrier potential for an abrupt pn junction. Question 2 involves calculating the maximum electric field across a pn junction during breakdown. Question 3 involves calculating minority carrier concentrations and junction capacitance. Question 4 involves drawing energy band diagrams for a pnp bipolar junction transistor and calculating its current gains. Question 5 involves drawing band diagrams for an n-type MOSCAP and plotting its CV characteristics.

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    VL2021220505858 Da02 PDF

    Uploaded by

    D Chinmay
    70 views1 page
    This document contains a list of 5 questions regarding electronics materials and devices on a winter semester exam. Question 1 involves calculating Fermi levels, drawing an energy band diagram, and determining the barrier potential for an abrupt pn junction. Question 2 involves calculating the maximum electric field across a pn junction during breakdown. Question 3 involves calculating minority carrier concentrations and junction capacitance. Question 4 involves drawing energy band diagrams for a pnp bipolar junction transistor and calculating its current gains. Question 5 involves drawing band diagrams for an n-type MOSCAP and plotting its CV characteristics.

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    This document contains a list of 5 questions regarding electronics materials and devices on a winter semester exam. Question 1 involves calculating Fermi levels, drawing an energy band diagram, and determining the barrier potential for an abrupt pn junction. Question 2 involves calculating the maximum electric field across a pn junction during breakdown. Question 3 involves calculating minority carrier concentrations and junction capacitance. Question 4 involves drawing energy band diagrams for a pnp bipolar junction transistor and calculating its current gains. Question 5 involves drawing band diagrams for an n-type MOSCAP and plotting its CV characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    70 views1 page

    VL2021220505858 Da02 PDF

    Uploaded by

    D Chinmay
    This document contains a list of 5 questions regarding electronics materials and devices on a winter semester exam. Question 1 involves calculating Fermi levels, drawing an energy band diagram, and determining the barrier potential for an abrupt pn junction. Question 2 involves calculating the maximum electric field across a pn junction during breakdown. Question 3 involves calculating minority carrier concentrations and junction capacitance. Question 4 involves drawing energy band diagrams for a pnp bipolar junction transistor and calculating its current gains. Question 5 involves drawing band diagrams for an n-type MOSCAP and plotting its CV characteristics.

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    © All Rights Reserved
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    School of Electronics Engineering

    DA-2
    Winter Semester (2021-22)
    Subject : Electronics Materials and Devices
    Question Question Marks
    Number
    1 For an abrupt pn junction, the doping densities of the n and p side are ND = 2
    1018 cm-3 and NA = 1017 cm-3 respectively.

    i) Calculate the Fermi level positions of the n and p regions


    ii) Draw the energy band diagram of the junction at equilibrium and
    show the barrier potential
    iii) Determine the barrier potential of the junction
    iv) Compare the results obtained in (ii) and (iii)
    2 A Si pn junction diode is formed from p-material doped with 1018 2
    acceptors/cm3 and n-material doped with 1.2 x 1017 donors/cm3. If the
    breakdown voltage of the diode is 26V, determine the maximum electric field
    across the junction during breakdown.
    3 i) Calculate the minority carrier concentrations at the edge of the 2
    space charge regions in a forward-biased pn junction. Consider a
    silicon pn junction at T = 300 K. Assume the doping concentration
    in the n region is ND = 1016 cm-3 and the doping concentration in
    the p region is NA = 6 × 1015 cm-3 and assume that a forward bias
    of 0.60 V is applied to the pn junction.

    ii) Consider an abrupt pn junction with doping concentrations of ND =


    1016 cm-3 and NA = 5×1015 cm-3. Calculate the junction capacitance
    at a reverse bias potential of 5V.
    4 a) Draw the energy band diagram of a pnp bipolar junction transistor at 2
    equilibrium and in different modes of operation

    b) Assume DE = 4DB, WE = 3WB, NB = 1018 cm-3, NE = 1020 cm-3. The


    intrinsic carrier concentration of the emitter and the base regions are
    1.5×1010 cm-3. ΔEgE = 50meV. Calculate the current gains (α and β) of
    the transistor.
    5 Draw the band diagrams of a MOSCAP at equilibrium, accumulation, 2
    depletion and inversion regions. Consider the semiconductor to be an n-type
    Si. Also, plot the CV characteristics

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