TK15A50D: Switching Regulator Applications
TK15A50D: Switching Regulator Applications
TK15A50D: Switching Regulator Applications
TK15A50D
Switching Regulator Applications
Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics Symbol Max Unit
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
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TK15A50D
Electrical Characteristics (Ta = 25°C)
Rise time tr ⎯ 50 ⎯
10 V ID = 7.5 A VOUT
VGS
Turn-on time ton 0V ⎯ 100 ⎯
Switching time 50 Ω RL =26Ω ns
Fall time tf ⎯ 25 ⎯
VDD ≈ 200 V
Turn-off time toff ⎯ 140 ⎯
Duty ≤ 1%, tw = 10 μs
Total gate charge Qg ⎯ 40 ⎯
Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A ⎯ 25 ⎯ nC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
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TK15A50D
ID – VDS ID – VDS
20 50
COMMON SOURCE 10 8 10 COMMON SOURCE
9
Tc = 25°C 7.25 Tc = 25°C
8.5
PULSE TEST PULSE TEST
(A)
(A)
16 7 40
DRAIN CURRENT ID
DRAIN CURRENT ID
8
6.75
12 30
6.5 7.5
6.25 20
8 7
6
6.5
4 10
VGS = 5.5 V VGS = 6 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50
40 8
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE
30 6
25
ID = 15 A
20 4
100
Tc = −55°C 7.5
10 2
3.8
0 0
0 2 4 6 8 10 12 0 4 8 12 16 20
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
VDS = 20 V
PULSE TEST
Tc = −55°C
10
RDS (ON) (Ω)
⎪Yfs⎪ (S)
VGS = 10, 15 V
25
100 0.1
COMMON SOURCE
Tc = 25°C
PULSE TEST
0.1 0.01
0.1 1 10 100 0.1 1 10 100
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TK15A50D
(A)
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
VGS = 10 V Tc = 25°C
10
RDS (ON) (Ω)
0.6
ID = 15A
0.4 10
7.5 1
3.8 5
0.2 3
1
VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Ciss
GATE THRESHOLD VOLTAGE
4
(pF)
1000
C
Coss
3
Vth (V)
CAPACITANCE
100
(V)
DRAIN POWER DISSIPATION
VDS
VGS
400 16
60
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
VDD = 100 V
300 400 12
PD (W)
40
200 8
VGS 200 COMMON SOURCE
ID = 15 A
20
Tc = 25°C
100 4
PULSE TEST
0 0 0
0 40 80 120 160 0 20 40 60 80
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rth – tw
10
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01 0.01
T
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.5°C/W
0.001
10 μ 100 μ 1m 10 m 100 m 1 10
100 μs * 500
ID max (continuous)
AVALANCHE ENERGY
10 1 ms *
400
(A)
EAS (mJ)
ID
DC operation 300
1 Tc = 25°C
DRAIN CURRENT
200
0.1 100
0
*: SINGLE NONREPETITIVE 25 50 75 100 125 150
0.01 PULSE Tc = 25°C
CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED Tch (°C)
LINEARLY WITH INCREASE
IN TEMPERATURE. VDSS max
0.001
1 10 100 1000
BVDSS
DRAIN-SOURCE VOLTAGE VDS (V) 15 V
IAR
−15 V
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 4.1 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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