FGD4536 — 360 V PDP Trench IGBT

September 2013

FGD4536
360 V PDP Trench IGBT
Features General Description
• High Current Capability Using novel trench IGBT technology, Fairchild’s new series of
• Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for consumer
appliances and PDP TV applications where low conduction and
• High Input Impedance
switching losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• PDP TV, Consumer Appliances

G
TO-252/D-PAK
E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 360 V
VGES Gate to Emitter Voltage  30 V

IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A

Maximum Power Dissipation @ TC = 25oC 125 W

PD
Maximum Power Dissipation @ TC = 100oC 50 W
TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC

Maximum Lead Temp. for soldering oC

TL 300
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case - 1.0 oC/W

RJA Thermal Resistance, Junction to Ambient - 62.5 oC/W

Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm -
FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A 360 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0V, IC = 250 A - 0.4 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 100 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 2.4 3.3 4.0 V
IC = 20 A, VGE = 15 V - 1.19 - V
IC = 30 A, VGE = 15 V - 1.33 - V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 50 A, VGE = 15 V,
- 1.59 1.8 V
TC = 25oC
IC = 50 A, VGE = 15 V,
- 1.66 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 1295 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 56 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 43 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 5 - ns
VCC = 200 V, IC = 20 A,
tr Rise Time - 20 - ns
RG = 5 , VGE = 15 V,
td(off) Turn-Off Delay Time Resistive Load, TC = 25oC - 41 - ns
tf Fall Time - 182 - ns
td(on) Turn-On Delay Time - 5 - ns
VCC = 200 V, IC = 20 A,
tr Rise Time - 21 - ns
RG = 5 , VGE = 15 V,
td(off) Turn-Off Delay Time Resistive Load, TC = 125oC - 43 - ns
tf Fall Time - 249 - ns
Qg Total Gate Charge - 47 - nC
VCE = 200 V, IC = 20 A,
Qge Gate to Emitter Charge VGE = 15 V - 5.4 - nC
Qgc Gate to Collector Charge - 15 - nC

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. Case Figure 8. Capacitance Characteristics

Temperature at Variant Current Level

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

Fgure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current

Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current

Figure 17. Turn off Switching SOA Characteristics

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 18.Transient Thermal Impedance of IGBT

PDM
t1
t2

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
Mechanical Dimensions

Figure 19. TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003.
Dimensions in Millimeters

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com

 FGD4536 — 360 V PDP Trench IGBT
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Rev. I66

©2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGD4536 Rev. C1

Free Datasheet http://www.Datasheet4U.com