Electronic Devices

and Circuits Theory

Robert L. Boylestad

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 1

 Table of Contents

Chapter 1 Semiconductor Diodes

Chapter 2 Diode Applications
Chapter 3 BJT Devices
Chapter 4 DC Biasing – BJTs
Chapter 5 BJT Amplifiers
Chapter 6 FET Devices
Chapter 7 DC Biasing – FETs
Chapter 8 FET Amplifiers
Chapter 9 BJT and FET Frequency Response
Chapter 10 Operational Amplifiers
Chapter 11 Op-Amp Applications
Chapter 12 Power Amplifiers
Chapter 13 Linear-Digital ICs
Chapter 14 Feedback and Oscillator Circuits
Chapter 15 Power Supplies (Voltage Regulators)
Chapter 16 Other Two-Terminal Devices
Chapter 17 pnpn and Other Devices

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 2

 Chapter 1
Semiconductor Diodes
Introduction
One of the noteworthy things about this field, as in many other areas of technology, is how little
the fundamental principles change over time. Systems are incredibly smaller, current speeds of
operation are truly remarkable, and new gadgets surface every day, leaving us to wonder where
technology is taking us. However, if we take a moment to consider that the majority of all the devices in
use were invented decades ago and that design techniques appearing in texts as far back as the 1930s
are still in use, we realize that most of what we see is primarily a steady improvement in construction
techniques and application of those devices rather than the development of new elements and
fundamentally new designs. The result is that most of the devices discussed in this text have been
around for some time, and that texts on the subject written a decade ago are still good references with
content that has not changed very much. The major changes have been in the understanding of how
these devices work and their full range of capabilities, and in improved methods of teaching the
fundamentals associated with them. The benefit of all this to the new student of the subject is that the
material in this text will, we hope, have reached a level where it is relatively easy to grasp and the
information will have application for years to come.

The miniaturization that has occurred in recent years leaves us to wonder about its limits.
Complete systems now appear on wafers thousands of times smaller than the single element of earlier
networks. The first integrated circuit (IC) was developed by Jack Kilby while working at Texas
Instruments in 1958. Today, the Intel® Pentium® 4 processor has more than 42 million transistors and a
host of other components. Recent advances suggest that 1 billion transistors will soon be placed on a
sliver of silicon smaller than a fingernail. We have obviously reached a point where the primary purpose
of the container is simply to provide some means for handling the device or system and to provide a
mechanism for attachment to the remainder of the network. Further miniaturization appears to be
limited by three factors: the quality of the semiconductor material, the network design technique, and
the limits of the manufacturing and processing equipment.

The first device to be introduced here is the simplest of all electronic devices, yet has a range of
applications that seems endless. We devote two chapters to the device to introduce the materials
commonly used in solid-state devices and review some fundamental laws of electric circuits.

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 3

Multiple Choice

1. How many terminals does a diode have?

a. 1
b. 2
c. 3
d. 4

2. What is the resistor value of an ideal diode in the region of conduction?

a. 0
b. 5 k
c. Undefined
d. Infinity

3. What is the state of an ideal diode in the region of non-conduction?

a. An open circuit
b. A short circuit
c. Unpredictable
d. Undefined

4. The diode _____.

a. is the simplest of semiconductor devices
b. has characteristics that closely match those of a simple switch
c. is a two-terminal device
d. All of the above

5. The ideal diode is a(n) _____ circuit in the region of non-conduction.

a. Open
b. Short

6. Which of the following is an atom composed of?

a. Electrons
b. Protons
c. Neutrons
d. All of the above

7. How many orbiting electrons does the germanium atom have?

a. 4
b. 14
c. 32
d. 41

8. How many valence electrons does a silicon atom have?

a. 1
b. 2
c. 3
d. 4

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 4

9. One eV is equal to _____ J.
a. 6.02 × 1023
b. 1.6 × 10–19
c. 6.25 × 1018
d. 1.66 × 10–24

10. Which of the following elements is most frequently used for doping pure Ge or Si?
a. Boron
b. Gallium
c. Indium
d. All of the above

11. The diffused impurities with _____ valence electrons are called donor atoms.
a. 4
b. 3
c. 5
d. 0

12. In what state is a silicon diode if the voltage drop across it is about 0.7 V?
a. No bias
b. Forward bias
c. Reverse bias
d. Zener region

13. What unit is used to represent the level of a diode forward current IF?
a. pA
b. nA
c. A
d. mA

14. Which of the following ratings is true?

a. Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
b. Si diodes have higher PIV and wider temperature ranges than Ge diodes.
c. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
d. Si diodes have lower PIV and wider temperature ranges than Ge diodes.

15. It is not uncommon for a germanium diode with an Is in the order of 1–2 A at 25°C to have
leakage current of 0.1 mA at a temperature of 100°C.
a. True
b. False

16. Calculate static resistance RD of a diode having ID = 30 mA and VD = 0.75 V.

a. 25
b. 40
c. 0.04
d. 0.025

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 5

17. Calculate ID if RD = 30 and VD = 0.84 V.
a. 28 mA
b. 0.028 mA
c. 2.8 A
d. 280 A

18. Refer to Figure 1.27. Calculate the dynamic resistance rd of a diode having ID = 27.5 mA.
a. 0
b. 2
c. 5
d. 26

19. Determining rd to a high degree of accuracy from a characteristic curve is very accurate.
a. True
b. False

20. The _____ diode model is employed most frequently in the analysis of electronic systems.
a. ideal device
b. simplified
c. piecewise-linear

21. Calculate the power dissipation of a diode having ID = 40 mA.

a. 28 mW
b. 28 W
c. 280 mW
d. Undefined

22. Which capacitance dominates in the reverse-bias region?

a. Depletion
b. Conversion
c. Diffusion
d. None of the above

23. Which capacitance dominates in the forward-bias region?

a. Diffusion
b. Transition
c. Depletion
d. None of the above

24. At what kind of operating frequency diffusion or transition is a capacitor represented in parallel
with the ideal diode?
a. Low frequency
b. Moderate frequency
c. Mid frequency
d. Very high frequency

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 6

25. What is the value of the transition capacitance for a silicon diode when VD = 0? (Choose the best
answer.)
a. 1 pF
b. 3 pF
c. 5 pF
d. 10 pF

26. Which of the following devices can check the condition of a semiconductor diode?
a. Digital display meter (DDM)
b. Multimeter
c. Curve tracer
d. All of the above

27. What does a high resistance reading in both forward- and reverse-bias directions indicate?
a. A good diode
b. An open diode
c. A shorted diode
d. A defective ohmmeter

28. The condition of a semiconductor diode can be determined quickly using a _____.
a. DDM
b. VOM
c. curve tracer
d. Any of the above

29. Determine the nominal voltage for the Zener diode at a temperature of 120° C if the nominal
voltage is 5.1 volts at 25° C and the temperature coefficient is 0.05%/° C.
a. 4.6 V
b. 4.86 V
c. 5.1 V
d. 5.34 V

30. Calculate the temperature coefficient in %/° C of a 10-V nominal Zener diode at 25° C if the
nominal voltage is 10.2 V at 100° C.
a. 0.0238
b. 0.0251
c. 0.0267
d. 0.0321

31. In which of the following color(s) is (are) LEDs presently available?

a. Yellow
b. White
c. Orange
d. All of the above

32. What is the maximum power rating for LEDs?

a. 150 mW
b. 500 mW

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 7

 c. 1 W
d. 10 W

33. In which of the following is the light intensity measured?

a. Candela
b. Efficacy
c. Flux
d. Illumination

34. What is the range of the operating voltage level for LEDs?
a. 5–12 mV
b. 1.7–3.3 V
c. 5–12 V
d. 20–25 V

35. In general, LEDs operate at voltage levels from _____ V to _____ V.

a. 1.0, 3.0
b. 1.7, 3.3
c. 0.5, 4.0
d. None of the above

36. A(n) _____ is the simplest of semiconductor devices.

a. Diode
b. Transistor
c. operational amplifier
d. SCR

37. The term _____ is often used when comparing the resistance level of materials.
a. Permittivity
b. Inductivity
c. Conductivity
d. resistivity

38. In the atomic lattice the _____ and _____ form the nucleus.
a. electrons, neutrons
b. electrons, protons
c. neutrons, protons
d. None of the above

39. An increase in temperature of a semiconductor can result in a _____ in the number of free
electrons in the material.
a. substantial increase
b. substantial decrease
c. slight decrease
d. no change

40. Ge and Si have a(n) _____ coefficient in forward bias.

a. positive temperature

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 8

 b. negative temperature
c. absolute temperature
d. temperature free

41. Any electron that has left its parent atom has _____ energy state relative to any electron in the
atomic structure.
a. the same
b. a lower
c. a higher
d. an undefined

42. Introducing those impurity elements that have _____ valence electrons creates the n-type
material.
a. 0
b. 3
c. 4
d. 5

43. In n-type material the _____ is called the majority carrier.

a. Electron
b. Hole
c. Proton
d. Neutron

44. The diffused impurities with _____ valence electrons are called acceptor atoms.
a. 0
b. 3
c. 4
d. 5

45. The reverse-saturation current level is typically measured in _____.

a. pA
b. A
c. mA
d. A

46. The depletion width _____ in the forward bias, which results in having a majority flow across the
junction.
a. Widens
b. remains unchanged
c. shrinks
d. widens and shrinks alternatively

47. The forward characteristics curve of a diode grows in _____ form.

a. Linear
b. Exponential
c. Logarithmic
d. Sinusoidal

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 9

48. The potential at which the characteristics curve vertical rise occurs is commonly referred to as
the _____.
a. Offset
b. Threshold
c. firing potential
d. All of the above

49. The reverse saturation current Is will just _____ in magnitude for every 10° C increase in
temperature.
a. Double
b. remain the same
c. halve
d. triple

50. Diodes are connected _____ to increase the current-carrying capacity.

a. in series
b. in parallel
c. in parallel-series
d. None of the above

51. The _____ the current through a diode, the _____ the dc resistance level.
a. higher, lower
b. lower, lower
c. lower, higher
d. higher, higher

52. Varying the _____ can control the location of the Zener region.
a. forward current
b. doping levels
c. forward voltage
d. dc resistance

53. The test current in a Zener diode IZT is the current defined by the _____ power level.
a. 0.25
b. 0.5
c. 0.75
d. 1.00

54. The heavier the current in a Zener diode in reverse bias, _____ dynamic resistance value.
a. the more the
b. the less the
c. there is substantially more
d. there is no change in the

55. The intensity of LED is greatest at _____ degrees and the least at _____ degrees.
a. 0, 90
b. 45, 90
c. 0, 45

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 10

 d. 90, 180

56. The temperature coefficient can be _____ for different Zener levels.
a. Positive
b. Negative
c. Zero
d. All of the above

57. The reverse recovery time of most commercial switching diodes is in the range of _____.
a. Picoseconds
b. a few nanoseconds
c. several microseconds
d. milliseconds

58. The ac resistance of a diode is the _____ of the characteristic curve at the Q-point of operation.
a. reciprocal of the slope
b. slope
c. midpoint
d. average value

59. Generally the value of ac resistance is _____ the value of dc resistance at the same operating
point.
a. smaller than
b. larger than
c. the same as
d. unrelated to

60. The reverse-bias current _____ with the increase of temperature.

a. Decreases
b. Increases
c. remains the same
d. None of the above

Essay
1. Give three reasons why Ge and Si have received the most attention in production of
semiconductor devices. (Section 1.2)

2. Explain the differences between the static and the dynamic resistance of a diode. (Section 1.8)

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 11

Answers for Chapter 1 Questions

1. 2 31. All of the above

2. 0 32. 150 mW
3. Open circuit 33. Candela
4. All of the above 34. 1.7–3.3 V
5. open 35. 1.7, 3.3
6. all of the above 36. diode
7. 32 37. resistivity
8. 4 38. neutrons, protons
9. 1.6 × 10–19 39. substantial increase
10. All of the above 40. negative temperature
11. 5 41. a higher
12. Forward bias 42. 5
13. mA 43. Electron
14. Si diodes have higher PIV and wider 44. 3
temperature ranges than Ge diodes. 45. A
15. True 46. Shrinks
16. 25 47. Exponential
17. 28 mA 48. All of the above
18. 2 49. Double
19. False 50. in parallel
20. Simplified 51. lower, higher
21. 28 mW 52. doping levels
22. Depletion 53. 0.25
23. Diffusion 54. the less the
24. Very high frequency 55. 0, 90
25. 3 pF 56. All of the above
26. All of the above 57. a few nanoseconds
27. An open diode 58. reciprocal of the slope
28. Any of the above 59. smaller than
29. 5.34 V 60. increases
30. 0.0267

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 12

 Chapter 2
Diode Applications
Introduction
The construction, characteristics, and models of semiconductor diodes were introduced
in Chapter 1. The primary goal of this chapter is to develop a working knowledge of the diode in
a variety of configurations using models appropriate for the area of application. By chapter's
end, the fundamental behavior pattern of diodes in dc and ac networks should be clearly
understood. The concepts learned in this chapter will have significant carryover in the chapters
to follow. For instance, diodes are frequently employed in the description of the basic
construction of transistors and in the analysis of transistor networks in the dc and ac domains.

This chapter demonstrates an interesting and very useful aspect of the study of a field
such as electronic devices and systems:

Once the basic behavior of a device is understood, its function and response in an
infinite variety of configurations can be examined.

In other words, now that we have a basic knowledge of the characteristics of a diode
along with its response to applied voltages and currents, we can use this knowledge to examine
a wide variety of networks. There is no need to reexamine the response of the device for each
application.

In general:

The analysis of electronic circuits can follow one of two paths: using the actual
characteristics or applying an approximate model for the device.

For the diode the initial discussion will include the actual characteristics to clearly
demonstrate how the characteristics of a device and the network parameters interact. Once

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 13

there is confidence in the results obtained, the approximate piecewise model will be employed
to verify the results found using the complete characteristics. It is important that the role and
the response of various elements of an electronic system be understood without continually
having to resort to lengthy mathematical procedures. This is usually accomplished through the
approximation process, which can develop into an art itself. Although the results obtained using
the actual characteristics may be slightly different from those obtained using a series of
approximations, keep in mind that the characteristics obtained from a specification sheet may
be slightly different from those of the device in actual use. In other words, for example, the
characteristics of a 1N4001 semiconductor diode may vary from one element to the next in the
same lot. The variation may be slight, but it will often be sufficient to justify the approximations
employed in the analysis. Also consider the other elements of the network: Is the resistor
labeled 100 exactly 100 ? Is the applied voltage exactly 10 V or perhaps 10.08 V? All these
tolerances contribute to the general belief that a response determined through an appropriate
set of approximations can often be "as accurate" as one that employs the full characteristics. In
this book the emphasis is toward developing a working knowledge of a device through the use
of appropriate approximations, thereby avoiding an unnecessary level of mathematical
complexity. Sufficient detail will normally be provided, however, to permit a detailed
mathematical analysis if desired.

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 14

Multiple Choice

1. Use the information provided here to determine the value of IDQ.

a. 0 mA
b. 4.3 mA
c. 5 mA
d. 10 mA

2. In a particular problem, which mode has the highest level of IDQ?

a. Ideal
b. Approximate equivalent
c. Exact mode using characteristic curve
d. None of the above

3. Which diode(s) has (have) a zero level current and voltage drop in the ideal model?
a. Si
b. Ge
c. Both Si and Ge
d. Neither Si nor Ge

4. Determine the current level if E = 15 V and R = 3 kΩ.

a. 0 A
b. mA
c. 5 mA 4.76mA
d. 5 A

5. Determine the voltage across the resistor.

a. 0 V
b. 0.09 V
c. 0.2 V
d. 0.44 V

6. Determine the value of the load resistor.

a. RL = 5 kΩ
b. RL = 5.5 kΩ
c. RL = 6 kΩ
d. None of the above

7. Determine ID.
a. 0 mA
b. 1.893 mA
c. mA
d. 2.143 mA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 15

8. Determine V2.
a. 3.201 V
b. 0 V
c. 4.3 V
d. 1.371 V

9. A diode is in the "_____" state if the current established by the applied sources is such
that its direction matches that of the arrow in the diode symbol, and VD ≥ 0.7 V for Si
and VD ≥ 0.3 V for Ge.
a. Off
b. On
c. Neutral
d. Quiescent

10. An open circuit can have any voltage across its terminals, but the current is always
_____.
a. 5 A
b. 0 A
c. 1 A
d. infinity

11. A short circuit has a _____ drop across its terminals, and the current is limited only by
the surrounding network.
a. 5 V
b. 0 V
c. 1 V
d. infinity

12. Determine ID2.

a. 29.40 mA
b. 30.30 mA
c. 14.70 mA
d. None of the above

13. Determine ID1.

a. 0 mA
b. 29.40 mA
c. 14.70 mA
d. 14.09 mA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 16

14. Determine ID2.
a. 6.061 mA
b. 0.7 mA
c. 3.393 mA
d. 3.571 mA

15. Determine the current through each diode if E1 = E2 = 0 V.

a. 4.65 mA
b. 9.3 mA
c. 18.6 mA
d. 0.7 mA

16. Determine Vo if E1 = E2 = 10 V
a. 9.3 V
b. 10 V
c. –10 V
d. 0 V

17. What is the logic function of this circuit?

a. Positive logic AND gate
b. Positive logic OR gate
c. Negative logic AND gate
d. Negative logic OR gate

18. What is the logic function of this circuit?

a. Positive logic AND gate
b. Positive logic OR gate
c. Negative logic AND gate
d. Negative logic OR gate

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 17

19. What best describes the circuit?
a. Full-wave rectifier
b. Half-wave rectifier
c. Clipper
d. Clamper

20. Determine the peak value of the current through the load resistor.
a. 2.325 mA
b. 5 mA
c. 1.25 mA
d. 0 mA

21. Determine the average value of the current through the load resistor.
a. 2.5 mA
b. 0 mA
c. 1.37 mA
d. 1.479 mA

22. What best describes the circuit?

a. Full-wave rectifier
b. Half-wave rectifier
c. Clipper
d. Clamper

23. List the categories of clippers.

a. Series
b. Parallel
c. Series and parallel
d. None of the above

24. Determine the peak value of the output waveform.

a. 25 V
b. 15 V
c. –25 V
d. –15 V

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 18

25. Determine the peak for both half cycles of the output waveform.
a. 16 V, –4 V
b. 16 V, 4 V
c. –16 V, 4 V
d. –16 V, –4 V

26. What best describes the circuit?

a. Full-wave rectifier
b. Half-wave rectifier
c. Clipper
d. Clamper

27. Determine the total discharge time for the capacitor in a clamper having C = 0.01 µF and
R = 500 kΩ.
a. 5 ms
b. 25 ms
c. 2.5 ms
d. 50 ms

28. Calculate IL and IZ.

a. 2 mA, 0 mA
b. 4 mA, 2 mA
c. 2 mA, 2 mA
d. 2 mA, 4 mA

29. With this Zener diode in its "on state," what is the level of IZ for the maximum load
resistance?
a. 0 mA
b. Undefined
c. Equal to IRL
d. IZM

30. In a voltage regulator network with fixed RL and R, what element dictates the minimum
level of source voltage?
a. VZ
b. IZ
c. IZM
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 19

31. Which element dictates the maximum level of source voltage?
a. VZ
b. IZM
c. IZ
d. None of the above

32. What is the peak inverse voltage across each diode in a voltage doubler?
a. Vm
b. 2Vm
c. 0.5Vm
d. 0.25Vm

33. What is the voltage measured from the negative terminal of C4 to the negative terminal
of the transformer?
a. –10 V
b. –20 V
c. 10 V
d. 20 V

34. In a voltage-multiplier circuit, the number of diodes is directly proportional to the

multiplicative voltage factor.
a. True
b. False

35. Rectifiers are commonly used in battery chargers.

a. True
b. False

36. The intersection of the load line with the characteristic curve determines the _____ of the
system.
a. point of operation
b. load-line analysis
c. characteristic curve
d. forward bias

37. The slope of the load line depends on the _____.

a. type of the diode used
b. characteristic curve
c. load resistor
d. source voltage

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 20

38. The load line is defined by the _____ and a characteristic curve is defined by the _____.
a. quiescent point, device
b. device, network
c. network, device
d. None of the above

39. The quiescent point (Q-point) is defined by a(n) _____.

a. ac network
b. dc network
c. ac and dc network
d. None of the above

40. The x-intercept of the load line with the characteristic curve is determined by the _____.
a. load resistor
b. diode
c. source voltage and the load resistor
d. source voltage

41. The source voltage must be _____ the voltage drop across the diode to conduct the diode.
a. larger than
b. smaller than
c. the same as
d. None of the above

42. As the load resistor increases, the slope of the dc load line and the levels of diode current _____.
a. Increase
b. Decrease
c. remain unchanged
d. are unpredictable

43. A germanium diode is approximated by _____ equivalent for voltages less than 0.3 V.
a. a short circuit
b. a series circuit
c. a parallel circuit
d. an open circuit

44. A diode is in the _____ state if the current established by the applied sources is such that its
direction matches that of the arrow in the diode symbol and VD > 0.7 V.
a. Off
b. reverse bias
c. on
d. transition

45. The combination of a short circuit in series with an open circuit always results in a(n) _____
circuit
a. Open
b. Short
c. neither short nor open
d. unknown

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 21

46. The absence of the Si or Ge and VD label on a diode denotes _____ notation.
a. approximate model
b. ideal model
c. exact model
d. None of the above

47. The process of removing one-half the input signal to establish a dc level is called _____.
a. Rectifier
b. full-wave rectifier
c. half-wave rectifier
d. filtering

48. The dc voltage level of a silicon diode is _____ its ideal model.
a. smaller than
b. larger than
c. the same as
d. None of the above

49. The PIV rating of the diodes in a full-wave rectifier must be larger than _____ Vm.
a. 0.318
b. 0.636
c. 2
d. 1

50. For the ideal diode the transition between states will occur at the point on the characteristic
curve when VD = _____ V and ID = _____ A.
a. 0.3, 0
b. 0, 0
c. 0.7, 0
d. 0.7, 0.3

51. A clamping network must have _____.

a. a capacitor
b. a diode
c. a resistive element
d. All of the above

52. The ratio of the total swing of the output of a clamper to its input total swing is _____.
a. 1
b. 2
c. 0.5
d. 0

53. For the "off" state of a Zener diode, the voltage across the diode should be _____.
a. greater than VZ
b. zero
c. less than VZ but greater than zero
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 22

54. Once the Zener diode is in the "on" state, VZ is always _____ VL.
a. larger than
b. smaller than
c. the same as
d. None of the above

55. Zener diodes are used in regulator networks to _____.

a. generate voltage
b. consume power
c. maintain a fixed voltage across the load resistor
d. protect the load

56. With the Zener diode in the "on" state, increasing IL will _____ IZ and _____IR.
a. decrease, increase
b. increase, decrease
c. decrease, keep the same level of
d. increase, keep the same level of

57. A Zener diode is in a _____ impedance region in the forward bias while it has a _____
impedance region in the reverse bias.
a. very large, low
b. very large, very large
c. low, low
d. low, very large

58. In a half-wave voltage doubler, the voltage across output capacitor C2 drops across the load
during the _____ half cycle and the capacitor is recharged up to _____ during the _____ half
cycle.
a. negative, 2Vm, positive
b. positive, Vm, negative
c. positive, 2Vm, negative
d. negative, Vm, positive

59. The full-wave voltage doubler provides _____ filtering action than (as) the half-wave voltage
doubler.
a. Better
b. Poorer
c. the same
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 23

 60. In this voltage multiplier, measuring from the top of the transformer winding will provide _____
multiples of Vm at the output, whereas measuring the output voltage from the bottom of the
transformer will provide _____ multiples of the peak Vm.

a. odd, even
b. even, odd
c. odd, odd
d. even, even

Essay
1. Describe how to obtain the quiescent point (Q-point) in a circuit. (Section 2.2)
2. Explain how diodes can be used to produce dc voltages from ac voltages. (Section 2.11)

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 24

Answers to Chapter 2 Questions

1. 4.3 mA 31. IZM

2. Ideal 32. 2Vm
3. Both Si and Ge 33. –20 V
4. 4.76 mA 34. True
5. 0V 35. True
6. RL = 5.5 kΩ 36. point of operation
7. 1.893 mA 37. load resistor
8. 1.371 V 38. network, device
9. On 39. dc network
10. 0A 40. source voltage
11. 0V 41. larger than
12. 14.70 mA 42. decrease
13. 0 mA 43. an open circuit
14. 3.393 mA 44. on
15. 4.65 mA 45. open
16. 10 V 46. ideal model
17. Positive logic OR gate 47. half-wave rectifier
18. Positive logic AND gate 48. larger than
19. Half-wave rectifier 49. 1
20. 2.325 mA 50. 0, 0
21. 1.479 mA 51. All of the above
22. Full-wave rectifier 52. 1
23. Series and parallel 53. less than VZ but greater than zero
24. 15 V 54. the same as
25. 16 V, –4 V 55. maintain a fixed voltage across the load
26. Clipper resistor
27. 25 ms 56. decrease, keep the same level of
28. 2 mA, 4 mA 57. low, very large
29. IZM 58. positive, 2Vm, negative
30. VZ 59. better
60. odd, even

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 25

 Chapter 3
BJT Devices

Introduction
During 1904 to 1947, the vacuum tube was undoubtedly the electronic device of
interest and development. In 1904, the vacuum-tube diode was introduced by J. A. Fleming.
Shortly thereafter, in 1906, Lee De Forest added a third element, called the control grid, to the
vacuum diode, resulting in the first amplifier, the triode. In the following years, radio and
television provided great stimulation to the tube industry. Production rose from about 1 million
tubes in 1922 to about 100 million in 1937. In the early 1930s the four-element tetrode and the
five-element pentode gained prominence in the electron-tube industry. In the years to follow,
the industry became one of primary importance, and rapid advances were made in design,
manufacturing techniques, high-power and high-frequency applications, and miniaturization.

On December 23, 1947, however, the electronics industry was to experience the advent
of a completely new direction of interest and development. It was on the afternoon of this day
that Walter H. Brattain and John Bardeen demonstrated the amplifying action of the first
transistor at the Bell Telephone Laboratories. The advantages of this three-terminal solid-state
device over the tube were immediately obvious: It was smaller and lightweight; it had no heater
requirement or heater loss; it had a rugged construction; it was more efficient since less power
was absorbed by the device itself; it was instantly available for use, requiring no warm-up
period; and lower operating voltages were possible. Note that this chapter is our first discussion
of devices with three or more terminals. You will find that all amplifiers (devices that increase
the voltage, current, or power level) have at least three terminals, with one controlling the flow
between the other two.

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 26

Multiple Choice

1. In what decade was the first transistor created?

a. 1930s
b. 1940s
c. 1950s
d. 1960s

2. How many layers of material does a transistor have?

a. 1
b. 2
c. 3
d. 4

3. What is the ratio of the total width to that of the center layer for a transistor?
a. 1:15
b. 1:150
c. 15:1
d. 150:1

4. Which of the following is (are) the terminal(s) of a transistor?

a. Emitter
b. Base
c. Collector
d. All of the above

5. List the types of bipolar junction transistors.

a. ppn, npn
b. pnp, npn
c. npp, ppn
d. nnp, pnp

6. Transistors are _____-terminal devices.

a. 2
b. 3
c. 4
d. 5

7. How many carriers participate in the injection process of a unipolar device?

a. 1
b. 2
c. 0
d. 3

8. Which component of the collector current IC is called the leakage current?

a. Majority
b. Independent
c. Minority
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 27

9. For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB?
a. 0.2 A
b. 200 mA
c. 200 µA
d. 20.2 mA

10. Calculate minority current ICO if IC = 20.002 mA and IC majority = 20 mA.

a. 2 µA
b. 0.002 µA
c. 2 nA
d. 2 µA

11. Which of the following regions is (are) part of the output characteristics of a transistor?
a. Active
b. Cutoff
c. Saturation
d. All of the above

12. In which region are both the collector-base and base-emitter junctions forward-biased?
a. Active
b. Cutoff
c. Saturation
d. All of the above

13. How much is the base-to-emitter voltage of a transistor in the "on" state?
a. 0 V
b. 0.7 V
c. 0.7 mV
d. Undefined

14. In the active region, while the collector-base junction is _____-biased, the base-emitter is
_____-biased.
a. forward, forward
b. forward, reverse
c. reverse, forward
d. reverse, reverse

15. What is βdc equal to?

a. IB / IE
b. IC / IE
c. IC / IB
d. None of the above

16. What are the ranges of the ac input and output resistance for a common-base configuration?
a. 10 Ω – 100 Ω, 50 kΩ – 1 MΩ
b. 50 kΩ –1 M Ω, 10Ω – 100 Ω
c. 10 Ω – 100 kΩ, 50 Ω –1 kΩ
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 28

17. For what kind of amplifications can the active region of the common-emitter configuration be
used?
a. Voltage
b. Current
c. Power
d. All of the above

18. Use this table of collector characteristics to calculate βac at VCE = 15 V and IB = 30 µA.
a. 100
b. 106
c. 50
d. 400

19. Calculate βdc at VCE = 15 V and IB = 30 µA.

a. 100
b. 116
c. 50
d. 110

20. Which of the following configurations can a transistor set up?

a. Common-base
b. Common-emitter
c. Common-collector
d. All of the above

21. Determine the value of α when β = 100.

a. 1.01
b. 101
c. 0.99
d. Cannot be solved with the information provided

22. What is the most frequently encountered transistor configuration?

a. Common-base
b. Common-collector
c. Common-emitter
d. Emitter-collector

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 29

23. βdc for this set of collector characteristics is within _____ percent of β.
a. 2
b. 5
c. 7
d. 10

24. βdc = ________

a. IB / IE
b. IC / IE
c. IC / IB
d. None of the above

25. What is (are) the component(s) of most specification sheets provided by the manufacturer?
a. Maximum ratings
b. Thermal characteristics
c. Electrical characteristics
d. All of the above

26. What is (are) the component(s) of electrical characteristics on the specification sheets?
a. On
b. Off
c. Small-signal characteristics
d. All of the above

27. Most specification sheets are broken down into _____.

a. maximum ratings
b. thermal characteristics
c. electrical characteristics
d. All of the above

28. An example of a pnp silicon transistor is a 2N4123.

a. True
b. False

29. Which of the following equipment can check the condition of a transistor?
a. Current tracer
b. Digital display meter (DDM)
c. Ohmmeter (VOM)
d. All of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 30

30. Which of the following can be obtained from the last scale factor of a curve tracer?
a. hFE
b. αdc
c. αac
d. βac

31. Calculate βacfor IC = 15 mA and VCE = 5 V.

a. 200
b. 180
c. 220
d. None of the above

32. What range of resistor values would you get when checking a transistor for forward- and
reverse-biased conditions by an ohmmeter?
a. 100 Ω to a few kΩ, exceeding 100 kΩ
b. Exceeding 100 kΩ, 100 Ω to a few kΩ
c. Exceeding 100 kΩ, exceeding 100 kΩ
d. 100 Ω to a few kΩ, 100 Ω to a few kΩ

33. What does a reading of a large or small resistance in forward- and reverse-biased conditions
indicate when checking a transistor using an ohmmeter?
a. Faulty device
b. Good device
c. Bad ohmmeter
d. None of the above

34. A transistor can be checked using a(n) _____.

a. curve tracer
b. digital meter
c. ohmmeter
d. Any of the above

35. How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line
package?
a. 4
b. 7
c. 10
d. 14

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 31

36. All amplifiers should have at least _____ terminals with _____ terminal(s) controlling the flow
between _____ other terminal(s).
a. 2, 1, 1
b. 3, 1, 2
c. 3, 2, 1
d. 3, 0, 3

37. The outer layers of a transistor are _____ the sandwiched layer.
a. much smaller than
b. the same as
c. much larger than
d. None of the above

38. The doping of the sandwiched layer is _____ that of the outer layers.
a. considerably less than
b. the same as
c. considerably more than
d. None of the above

39. The lower doping level _____ the conductivity and _____ the resistivity of the material.
a. increases, decreases
b. increases, increases
c. decreases, decreases
d. decreases, increases

40. The term bipolar reflects the fact that _____ and _____ participate in the injection process into
the oppositely polarized material.
a. holes, neutrons
b. holes, electrons
c. neutrons, electrons
d. None of the above

41. One p-n junction of a transistor is _____-biased and the other one is _____-biased in the active
region.
a. reverse, reverse
b. forward, forward
c. reverse, forward
d. None of the above

42. The magnitude of the base current is typically on the order of _____ as compared to _____ for
the emitter.
a. µA, µA
b. µA, mA
c. mA, µA
d. mA, mA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 32

43. The base current is the _____ of the emitter and collector currents.
a. Sum
b. Difference
c. Product
d. None of the above

44. The _____ region is the region normally employed for linear (undistorted) amplifiers.
a. Active
b. Cutoff
c. Saturation
d. All of the above

45. In the cutoff region the collector-base junction is _____-biased and the base-emitter junction is
_____-biased for a transistor.
a. reverse, forward
b. forward, reverse
c. reverse, reverse
d. forward, forward

46. In the saturation region the collector-base junction is _____-biased and the base-emitter
junction is _____-biased for a transistor.
a. reverse, forward
b. forward, reverse
c. reverse, reverse
d. forward, forward

47. For practical transistors the level of alpha typically extends from _____ to _____ with most
approaching the higher end of the range.
a. 0.0, 1
b. 0.90, 0.998
c. 50, 400
d. None of the above

48. Typical values of voltage amplification for the common-base configurations vary from _____ and
the current gain is always _____ .
a. less than 1, 50 to 300
b. 50 to 300, larger than 1
c. 50 to 300, less than 1
d. larger than 1, 50 to 300

49. If a value of β is specified for a particular transistor configuration it will normally be used for
_____ calculations.
a. Ac
b. Dc
c. ac and dc
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 33

50. The common-collector configuration has a _____ input impedance and a _____ output
impedance.
a. low, high
b. high, low
c. high, high
d. low, low

51. The active region of a transistor is bounded by the _____.

a. cutoff region
b. saturation region
c. power dissipation curve
d. All of the above

52. The "on" and "off" characteristics refer to _____ limits while the small-signal characteristics
indicate the parameters of importance to _____ operation.
a. ac, dc
b. dc, ac
c. ac, dc and ac
d. dc and ac, dc

53. The step function (per step) of a curve tracer reveals the scale for _____.
a. collector current IC
b. VCE voltage
c. base current IB
d. All of the above

54. The level of _____ is determined and displayed by advanced digital meters.
a. VCE
b. IB
c. IC
d. βdc

55. The level of _____ is determined and displayed by advanced digital meters if using diode-testing
mode.
a. VBE
b. IC
c. IB
d. IE

56. When checking a transistor by ohmmeter, a relatively _____ resistance is displayed for a
forward-biased junction and _____ resistance for a reverse-biased junction.
a. low, very high
b. low, low
c. high, high
d. high, very low

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 34

 57. An OL indication on an advanced digital meter indicates _____ while checking a transistor.
a. forward bias
b. reverse bias
c. definitely a defective transistor
d. None of the above

58. If the positive lead of an ohmmeter is connected to the base and the negative lead to the
emitter, a low resistance reading would indicate a _____ transistor and a high resistance reading
would indicate a _____ transistor.
a. npn, pnp
b. pnp, npn
c. npn, npn
d. pnp, pnp

59. The leads of a transistor are typically made of _____.

a. Gold
b. Aluminum
c. Nickel
d. All of the above

60. There is(are) _____ in the internal construction of a TO-92 package.

a. gold bond wires
b. a copper frame
c. epoxy encapsulation
d. All of the above

Essay
1. Explain and compare the operation of npn and pnp transistors. (Section 3.4)
2. List the conditions of the p-n junctions in active, saturation, and cutoff regions. (Section 3.4)

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 35

Answers to Chapter 3 Questions

1. 1940s 31. 200

2. 3 32. 100 Ω to a few k Ω, exceeding 100 k Ω
3. 150:1 33. Faulty device
4. All of the above 34. Any of the above
5. pnp, npn 35. 4
6. 3 36. 3, 1, 2
7. 1 37. much larger than
8. Minority 38. considerably less than
9. 200 µA 39. decreases, increases
10. 2 µA 40. holes, electrons
11. All of the above 41. reverse, forward
12. Saturation 42. µA, mA
13. 0.7 V 43. difference
14. reverse, forward 44. active
15. IC / IE 45. reverse, reverse
16. 10 Ω –100 Ω, 50 k Ω–1 M Ω 46. forward, forward
17. All of the above 47. 0.90, 0.998
18. 100 48. 50 to 300, less than 1
19. 110 49. ac and dc
20. All of the above 50. high, low
21. 0.99 51. All of the above
22. Common-emitter 52. dc, ac
23. 10 53. base current IB
24. IC / IB 54. βdc
25. All of the above 55. VBE
26. All of the above 56. low, very high
27. All of the above 57. reverse bias
28. False 58. npn, pnp
29. All of the above 59. aluminum
30. βac 60. All of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 36

 Chapter 4
DC Biasing–BJTs
Introduction
The analysis or design of a transistor amplifier requires knowledge of both the dc and
the ac response of the system. Too often it is assumed that the transistor is a magical device
that can raise the level of the applied ac input without the assistance of an external energy
source. In actuality,

The improved output ac power level is the result of a transfer of energy from the
applied dc supplies.

The analysis or design of any electronic amplifier therefore has two components: the dc
portion and the ac portion. Fortunately, the superposition theorem is applicable and the
investigation of the dc conditions can be totally separated from the ac response. However, one
must keep in mind that during the design or synthesis stage the choice of parameters for the
required dc levels will affect the ac response, and vice versa.

The dc level of operation of a transistor is controlled by a number of factors, including

the range of possible operating points on the device characteristics. In Section 4.2 we specify
the range for the bipolar junction transistor (BJT) amplifier. Once the desired dc current and
voltage levels have been defined, a network must be constructed that will establish the desired
operating point. A number of these networks are analyzed in this chapter. Each design will also
determine the stability of the system, that is, how sensitive the system is to temperature
variations, another topic to be investigated in a later section of this chapter.

Although a number of networks are analyzed in this chapter, there is an underlying

similarity in the analysis of each configuration due to the recurring use of the following
important basic relationships for a transistor:

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 37

 In fact, once the analysis of the first few networks is clearly understood, the path toward
the solution of the networks to follow will begin to become quite apparent. In most instances
the base current IB is the first quantity to be determined. Once IB is known, the relationships of
Eqs. (4.1) through (4.3) can be applied to find the remaining quantities of interest. The
similarities in analysis will be immediately obvious as we progress through the chapter. The
equations for IB are so similar for a number of configurations that one equation can be derived
from another simply by dropping or adding a term or two. The primary function of this chapter
is to develop a level of familiarity with the BJT transistor that would permit a dc analysis of any
system that might employ the BJT amplifier.

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 38

Multiple Choice:

1. Which of the following currents is nearly equal to each other?

a. IB and IC
b. IE and IC
c. IB and IE
d. IB, IC, and IE

2. The ratio of which two currents is represented by β?

a. IC and IE
b. IC and IB
c. IE and IB
d. None of the above

3. At what region of operation is the base-emitter junction forward biased and the base-
collector junction reverse biased?
a. Saturation
b. Linear or active
c. Cutoff
d. None of the above

4. Calculate the approximate value of the maximum power rating for the transistor
represented by the output characteristics of Figure 4.1?
a. 250 mW
b. 170 mW
c. 50 mW
d. 0 mW

5. The cutoff region is defined by IB _____ 0 A.

a. >
b. <

6. The saturation region is defined by VCE _____ VCEsat.

a. >
b. <

7. For the BJT to operate in the active (linear) region, the base-emitter junction must be
_____-biased and the base-collector junction must be _____-biased.
a. forward, forward
b. forward, reverse
c. reverse, reverse
d. reverse, forward

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 39

8. For the BJT to operate in the saturation region, the base-emitter junction must be
_____-biased and the base-collector junction must be _____-biased.
a. forward, forward
b. forward, reverse
c. reverse, reverse
d. reverse, forward

9. Which of the following voltages must have a negative level (value) in any npn bias
circuit?
a. VBE
b. VCE
c. VBC
d. None of the above

10. For what value β does the transistor enter the saturation region?
a. 20
b. 50
c. 75
d. 116

11. Determine the reading on the meter when VCC = 20 V, RC = 5 Ω, and IC = 2 mA.
a. 10 V 5k ohms

b. –10 V
c. 0.7 V
d. 20 V

12. Which of the following is assumed in the approximate analysis of a voltage divider
circuit?
a. IB is essentially zero amperes.
b. R1 and R2 are considered to be series elements.
c. βRE greater ≥ 10R2
d. All of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 40

13. It is desirable to design a bias circuit that is independent of the transistor beta.
a. True
b. False

14. Calculate the voltage across the 91 kΩ resistor.

a. 18 V
b. 9.22 V
c. 3.23 V
d. None of the above

15. Calculate the value of VCEQ.

a. 8.78 V
b. 0 V
c. 7.86 V
d. 18 V

16. Calculate ICsat.

a. 35.29 mA
b. 5.45 mA
c. 1.86 mA
d. 4.72 mA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 41

17. Calculate VCE.
a. 4.52 V
b. –4.52 V
c. 4.48 V
d. –4.48 V

18. Calculate VCE.

a. –4.52 V
b. 4.52 V
c. –9 V
d. 9 V

19. Which of the following is (are) related to an emitter-follower configuration?

a. The input and output signals are in phase.
b. The voltage gain is slightly less than 1.
c. Output is drawn from the emitter terminal.
d. All of the above

20. Determine the values of VCB and IB for this circuit.

a. 1.4 V, 59.7 µA
b. –1.4 V, 59.7 µA
c. –9.3 V, 3.58 µA
d. 9.3 V, 3.58 µA

21. Calculate ETh for this network.

a. −12.12 V
b. 16.35 V
c. −3.65 V
d. 10 V

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 42

22. Calculate Rsat if VCE = 0.3 V.
a. 49.2 Ω
b. 49.2 kΩ
c. 49.2 mΩ
d. 49.2 MΩ

23. You can select the values for the emitter and collector resistors from the information
that is provided for this circuit.
a. True
b. False

24. In the case of this circuit, you must assume that VE = 0. 1·VCC in order to calculate RC and
RE.
a. True
b. False

25. Which of the following is (are) the application(s) of a transistor?

a. Amplification of signal
b. Switching and control
c. Computer logic circuitry
d. All of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 43

26. Calculate the storage time in a transistor switching network if t off is 56 ns, tf = 14 ns, and
tr = 20 ns.
a. 70 ns
b. 42 ns
c. 36 ns
d. 34 ns

27. The total time required for the transistor to switch from the "off" to the "on" state is
designated as ton and defined as the delay time plus the time element.
a. True
b. False

28. For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.
a. True
b. False

29. For the typical transistor amplifier in the active region, V CE is usually about _____ % to
_____ % of VCC.
a. 10, 60
b. 25, 75
c. 40, 90

30. Which of the following is (are) a stability factor?

a. S(ICO)
b. S(VBE)
c. S(β)
d. All of the above

31. In a fixed-bias circuit, which one of the stability factors overrides the other factors?
a. S(ICO)
b. S(VBE)
c. S(β)
d. Undefined

32. In a voltage-divider circuit, which one of the stability factors has the least effect on the
device at very high temperature?
a. S(ICO)
b. S(VBE)
c. S(β)
d. Undefined

33. Use this table to determine the change in IC from 25ºC to 175ºC for R B / RE = 250 due to
the S(ICO) stability factor. Assume an emitter-bias configuration.
a. 140.34 nA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 44

 b. 140.34 µA
c. 42.53 nA
d. 0.14034 nA

34. Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table
for fixed-bias with RB = 240 kΩ and β= 100 due to the S(VBE) stability factor.
a. 145.8 µA
b. 145.8 nA
c. –145.8 µA
d. –145.8 nA

35. Determine ICQ at a temperature of 175º C if ICQ = 2 mA at 25º C for RB / RE = 20 due to the
S(β) stability factor.
a. 2.417 mA
b. 2.392 mA
c. 2.25 mA
d. 2.58 mA

36. By definition, quiescent means _____.

a. quiet
b. still
c. inactive
d. All of the above

37. _____ should be considered in the analysis or design of any electronic amplifiers.
a. dc
b. ac
c. dc and ac
d. None of the above

38. For the dc analysis the network can be isolated from the indicated ac levels by replacing
the capacitor with _____.
a. an open circuit equivalent
b. a short circuit equivalent
c. a source voltage
d. None of the above

39. In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a _____ resistor
sets the level of _____ current for the operating point.
a. collector, base
b. base, base
c. collector, collector
d. None of the above

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 45

40. Changes in temperature will affect the level of _____.
a. current gain β
b. leakage current ICEO
c. both current gain β and leakage current ICEO
d. None of the above

41. In a fixed-bias circuit, the magnitude of IC is controlled by and therefore is a function of

_____.
a. RB
b. RC
c. β
d. RB and β

42. For a transistor operating in the saturation region, the collector current IC is at its _____
and the collector-emitter voltage VCE is to the _____.
a. minimum, left of the VCEsat line
b. minimum, right of the VCEsat line
c. maximum, left of the VCEsat line
d. maximum, right of the VCEsat line

43. The dc load line is determined solely by the _____.

a. base-emitter loop
b. collector-emitter loop
c. base-collector loop
d. None of the above

44. A change in value of _____ will create a new load line parallel to its previous one in a
fixed-bias circuit.
a. RB
b. RC
c. VCC
d. VBE

45. In a fixed-bias circuit, the slope of the dc load line is controlled by _____.
a. RB
b. RC
c. VCC
d. IB

46. The emitter resistor in an emitter-stabilized bias circuit appears to be _____ in the base
circuit.
a. larger
b. smaller

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 46

 c. the same
d. None of the above

47. _____is the primary difference between the exact and approximate techniques used in
the analysis of a voltage divider circuit.
a. Thevenin voltage ETh
b. Thevenin resistance RTh
c. Base voltage VB
d. RC

48. The Thevenin equivalent network is used in the analysis of the _____ circuit.
fixed bias
a. emitter-stabilized bias
b. voltage divider
c. voltage feedback

49. The saturation current of a transistor used in a fixed-bias circuit is _____ its value used
in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.
a. more than
b. the same as
c. less than
d. None of the above

50. In a collector feedback bias circuit, the current through the collector resistor is _____
and the collector current is _____.
a. IC, IC
b. IB + IC, IC
c. IB, IC
d. None of the above

51. _____is the least stabilized circuit.

a. Fixed bias
b. Emitter-stabilized bias
c. Voltage divider
d. Voltage feedback

52. _____ is less dependent on the transistor beta.

a. Fixed bias
b. Emitter bias
c. Voltage divider
d. Voltage feedback

53. In a transistor-switching network, the level of the resistance between the collector and
emitter is _____ at the saturation and is _____at the cutoff.

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 a. low, low
b. low, high
c. high, high
d. high, low

54. In a transistor-switching network, the operating point switches from _____ to _____
regions along the load line.
a. cutoff, active
b. cutoff, saturation
c. active, saturation
d. None of the above

55. For the typical transistor amplifier in the active region, V CE is usually about _____ % to
_____ % of VCC.
a. 0, 100
b. 25, 75
c. 45, 55
d. None of the above

56. In any amplifier employing a transistor, the collector current IC is sensitive to _____.
a. Β
b. VBE
c. ICO
d. All of the above

57. As the temperature increases, β_____, VBE _____, and ICO _____ in value for every 10ºC.
a. increases, decreases, doubles
b. decreases, increases, remains the same
c. decreases, increases, doubles
d. increases, increases, triples

58. A significant increase in leakage current due to increase in temperature creates

_____between IB curves.
a. smaller spacing
b. larger spacing
c. the same space as at lower temperature
d. None of the above

59. The _____the stability factor, the _____sensitive the network is to variations in that
parameter.
a. higher, more
b. higher, less
c. lower, more

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 d. None of the above

60. In an emitter-bias configuration, the _____ the resistance RE, the _____ the stability
factor, and the _____ stable is the system.
a. smaller, lower, less
b. larger, more, more
c. smaller, more, more
d. larger, lower, more

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 49

Answers to Chapter 4 Questions

1. IE and IC 31. S(β)

2. IC and IB 32. S(β)
3. Linear or active 33. 140.34 µA
4. 170 mW 34. 145.8 µA
5. ≤ 35. 2.417 mA
6. ≤ 36. All of the above
7. forward, reverse 37. dc and ac
8. forward, forward 38. an open circuit equivalent
9. VBC 39. base, base
10. 116 40. both current gain β and leakage
11. 10 V current ICEO
12. All of the above 41. RB and β
13. True 42. maximum, left of the VCEsat line
14. 3.23 V 43. collector-emitter loop
15. 7.86 V 44. VCC
16. 4.72 mA 45. RC
17. 4.52 V 46. Larger
18. 4.52 V 47. Thevenin resistance RTh
19. All of the above 48. voltage divider
20. 1.4 V, 59.7 µA 49. more than
21. −3.65 V 50. IB + IC, IC
22. 49.2 Ω 51. Fixed bias
23. False 52. Voltage divider
24. True 53. low, high
25. All of the above 54. cutoff, saturation
26. 42 ns 55. 25, 75
27. True 56. All of the above
28. True 57. increases, decreases, doubles
29. 25, 75 58. larger spacing
30. All of the above 59. higher, more
60. larger, lower, more

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