This document provides specifications for the C945 transistor. Key details include:
1. It is an NPN plastic-encapsulated transistor suitable for TO-92 packages with excellent hFE linearity and low noise.
2. Maximum ratings include a collector-base voltage of 60V, collector-emitter voltage of 50V, and junction temperature of 125°C.
3. Electrical characteristics include a typical DC current gain of 700 at 1mA collector current and 40 at 0.1mA, and a transition frequency of 200MHz.
This document provides specifications for the C945 transistor. Key details include:
1. It is an NPN plastic-encapsulated transistor suitable for TO-92 packages with excellent hFE linearity and low noise.
2. Maximum ratings include a collector-base voltage of 60V, collector-emitter voltage of 50V, and junction temperature of 125°C.
3. Electrical characteristics include a typical DC current gain of 700 at 1mA collector current and 40 at 0.1mA, and a transition frequency of 200MHz.
This document provides specifications for the C945 transistor. Key details include:
1. It is an NPN plastic-encapsulated transistor suitable for TO-92 packages with excellent hFE linearity and low noise.
2. Maximum ratings include a collector-base voltage of 60V, collector-emitter voltage of 50V, and junction temperature of 125°C.
3. Electrical characteristics include a typical DC current gain of 700 at 1mA collector current and 40 at 0.1mA, and a transition frequency of 200MHz.
This document provides specifications for the C945 transistor. Key details include:
1. It is an NPN plastic-encapsulated transistor suitable for TO-92 packages with excellent hFE linearity and low noise.
2. Maximum ratings include a collector-base voltage of 60V, collector-emitter voltage of 50V, and junction temperature of 125°C.
3. Electrical characteristics include a typical DC current gain of 700 at 1mA collector current and 40 at 0.1mA, and a transition frequency of 200MHz.
1.EMITTER FEATURE 2.COLLECTOR z Excellent hFE linearity z Low noise 3. BASE z Complementary to A733
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃
