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I=AIRCHIL..C

464 Ellis Street, Mountain View, California 94042

@1978 Fairchild Camera and Instrument Corporation/464 Ellis Street, Mountain View, California 94042/(415) 962-5011/TWX 91 0-379-6435
 INTRODUCTION

Fairchild Camera and Instrument Corporation is one of the largest suppliers of standard and high-
reliability diodes. Our broad line consists of small signal and switching diodes, zener diodes, diode
arrays, diode assemblies and rectifiers. Through design and process improvements Fairchild has
consistantly been able to deliver excellent quality, low cost diodes in high volume.

This data book is designed to make the selection of diodes very simple. Information is complete and
arranged for your convenience.

It contains:
Numeric Index of Devices for quick location of data.
Device Selection Guides by applicetion and product.
Industry Cross Reference, industry versus Fairchild recommended part.
Reliability Information, basis of Fairchild quality.
Product Information, complete data sheets on all standard devices, arranged numerically.
Family Curves, data sheets reference applicable curves.
Glossary
Sales Contacts: addresses of Fairchild Sales Offices, Sales Representatives, and Fairchild Fran-
chised Distributors.

As well as supplying a complete line of standard devices, Fairchild is capable of supplying custom
devices tailored to your application. The factory will evaluate your print and recommend the best,
most cost effective device.
 TABLE OF CONTENTS
NUMERICAL INDEX OF DEVICES . vi
CHAPTER 1
Selection Guides ... ......... 1-3
Cross Reference .. 1-25

CHAPTER 2
Reliability ... . .... 2-3
Designed-In Reliability ....... 2-3
Reliability Control .. 2-4
Reliability Data ..... 2-6
FDH4 ............. 2-7
FD5 and FDH5 ....................................... 2-8
FDH6 ...... . . ..... 2-9
FDH9 and FDH 11 ........ 2-10
112 W Zener .2-11
In-Use Reliability ......... . .............................. . . ............................... 2-12
Air-Isolated Monolithic Diode Array Family ........ . . .. 2-13

CHAPTER 3
PRODUCT INFORMATION
Data Sheets .......... 3-3

CHAPTER 4
FAMILY CURVES ...... 4-3

CHAPTER 5
DIODE GLOSSARY OF SYMBOLS AND TERMS ........... 5-3

CHAPTER 6
FAIRCHILD FIELD SALES OFFICES, SALES REPRESENTATIVES
AND DISTRIBUTOR LOCATIONS ........... . . .. 6-3
 NUMERIC PRODUCT LISTING

Device Type Page No. Device Type Page No.

BAV17 Smail Signal Diode 3-3 BZX85C4V3 Zener Diode 3-20

BAV18 3-3 BZX85C4V7 3-20
BAV19 3-3 BZX85C5Vl 3-20
BAV20 3-3 BZX85C5V6 3-20
BAV21 3-3 BZX85C6V2 3-20
BAW75 3-4 BZX85C6V8 3-20
BAW76 3-4 BZX85C7V5 3-20
BAX13 3-5 BZX85C8V2 3-20
BAX16 3-6 BZX85C9Vl 3-20
BAY71 3-7 BZX85Cl0 3-20
BAY72 3-8 BZX85Cll 3-20
BAY73 3-9 BZX85C12 3-20
BAY74 3-10 BZX85C13 3-20
BAY80 3-8 BZX85C15 3-20
BAY82 3-11 BZX85C16 3-20
BA128 3-12 BZX85C18 3-20
BA129 3-9 BZX85C20 3-20
BA130 3-12 BZX85C22 3-20
BA180 3-13 BZX85C24 3-20
BA181 3-13 BZX85C27 3-20
BA216 3-14 BZX85C30 3-20
BA217 3-14 BZX85C33 3-20
BA218 3-14 BZY88C3V3 3-21
BA219 3-14 BZY88C3V6 3-21
BA243 3-15 BZY88C3V9 3-21
BA244 3-15 BZY88C4V3 3-21
BB121A Varactor Diode 3-16 BZY88C4V7 3-21
BB121B 3-16 BZY88C5Vl 3-21
BB122 3-16 BZY88C5V6 3-21
BB139 3-17 BZY88C6V2 3-21
BB204B Dual Varactor Diode 3-18 BZY88C6V8 3-21
BB204G 3-18 BZY88C7V5 3-21
BZX55C3V3 Zener Diode 3-19 BZY88C8V2 3-21
BZX55C3V6 3-19 BZY88C9Vl 3-21
BZX55C3V9 3-19 BZY88Cl0 3-21
BZX55C4V3 3-19 BZY88Cll 3-21
BZX55C4V7 3-19 BZY88C12 3-21
BZX55C5Vl 3-19 BZY88C13 3-21
BZX55C5V6 3-19 BZY88C15 3-21
BZX55C6V2 3-19 BZY88C16 3-21
BZX55C6V8 3-19 BZY88C18 3-21
BZX55C7V5 3-19 BZY8BC20 3-21
BZX55CBV2 3-19 BZY88C22 3-21
BZX55C9Vl 3-19 BZY8BC24 3-21
BZX55Cl0 3-19 BZY88C27 3-21
BZX55Cll 3-19 BZY8BC30 3-21
BZX55C12 3-19 BZY8BC33 3-21
BZX55C13 3-19 FA2310E Diode Assembly 3-24
BZX55C15 3-19 FA2310U 3-24
BZX55C16 3-19 FA2311E 3-24
BZX55C1B 3-19 FA2311U 3-24
BZX55C20 3-19 FA2312E 3-24
BZX55C22 3-19 FA2312U 3-24
BZX55C24 3-19 FA2313E 3-24
BZX55C27 3-19 FA2313U 3-24
BZX55C30 3-19 FA2320E 3-24
BZX55C33 3-19 FA2320U 3-24
BZXB5C3V3 3-20 FA2321E 3-24
BZX85C3V6 3-20 FA2321U 3-24
BZXB5C3V9 3-20 FA2322E 3-24

vi
 NUMERIC PRODUCT LISTING (Cont'd)

Device Type Page No. Device Type Page No.

FA2322U Diode Assembly 3-24 FA4325U Diode Assembly 3-24

FA2323E 3-24 FA4330E 3-24
FA2323U 3-24 FA4330U 3-24
FA2324E 3-24 FA4331E 3-24
FA2324U 3-24 FA4331U 3-24
FA2325E 3-24 FA4332E 3-24
FA2325U 3-24 i=A4332U 3-24
FA2330E 3-24 FA4333E 3-24
FA2330U 3-24 FA4333U 3-24
FA2331E 3-24 FA4334E 3-24
FA2331U 3-24 FA4334U 3-24
FA2332E 3-24 FA4335E 3-24
FA2332U 3-24 FA4335U 3-24
FA2333E 3-24 FA4360E 3-24
FA2333U 3-24 FA4360U 3-24
FA2334E 3-24 FA4361E 3-24
FA2334U 3-24 FA4361U 3-24
FA2335E 3-24 FDH300 Single Junction Diode 3-26
FA2335U 3-24 FDH333 3-26
FA2360E 3-24 FDH400 3-27
FA2360U 3-24 FDH444 Small Signal Diode 3-27
FA2361E 3-24 FDH600 3-28
FA2361U 3-24 FDH666 3-28
FA3310 3-24 FDH900 3-29
FA3311 3-24 FDH999 3-29
FA3312 3-24 FDH1000 3-30
FA3313 3-24 FD700 3-31
FA3320 3-24 FD777 3-31
FA3321 3-24 FH1100 Hot Carrier Diode 3-32
FA3322 3-24 FJT1100 Small Signal Diode 3-33
FA3323 3-24 FJT1101 3-33
FA3324 3-24 FSA1410M Diode Arrays 3-34
FA3325 3-24 FSA1411M 3-34
FA3330 3-24 FSA2002M 3-34
FA3331 3-24 FSA2003M 3-34
FA3332 3-24 FSA2500M 3-36
FA3333 3-24 FSA2501M 3-36
FA3334 3-24 FSA2501P 3-36
FA3335 3-24 FSA2502M 3-36
FA3360 3-24 FSA2503M 3-39
FA3361 3-24 '=SA2503P 3-39
FA4310E 3-24 FSA2504M 3-39
FA4310U 3-24 FSA2509M 3-41
FA4311E 3-24 FSA2509P 3-41
FA4311U 3-24 FSA2510M 3-41
FA4312E 3-24 FSA2510P 3-41
FA4312U 3-24 FSA2563M 3-43
FA4313E 3-24 FSA2563P 3-43
FA4313U 3-24 FSA2564M 3-43
FA4320E 3-24 FSA2564P 3-43
FA4320U 3-24 FSA2565M 3-43
FA4321E 3-24 FSA2565P 3-43
FA4321U 3-24 FSA2566M 3-43
FA4322E 3-24 FSA2566P 3-43
FA4322U 3-24 FSA2619M 3-46
FA4323E 3-24 FSA2619P 3-46
FA4323U 3-24 FSA2620M 3-46
FA4324E 3-24 FSA2620P 3-46
FA4324U 3-24 FSA2621M 3-46
FA4325E 3-24 FSA2702M 3-49

vii
 NUMERIC PRODUCT LISTING (Cont'd)

Device Type Page No. Device Type Page No.

FSA2703M Diode Arrays 3-49 1N659 Small Signal Diode 3-60

FSA2704M 3-49 1N660 3-60
FSA2705M 3-49 1N661 3-60
FSA2719M 3-46 1N746 Zener Diode 3-61
FSA2719P 3-46 1N747 3-61
FSA2720M 3-46 1N748 3-61
FSA2720P 3-46 1N749 3-61
FSA2721M 3-46 1N750 3-61
MV104 Dual Varactor Diode 3-18 1N751 3-61
RF400 Voltage Variable Capacitor Diode 3-51 1N752 3-61
RF401 Voltage Variable Capacitor Diode 3-51 1N753 3-61
RF500 Dual Varactor Diode 3-52 1N754 3-61
ZPD3,3 Zener Diode 3-53 1N756 3-61
ZPD3,6 3-53 1N757 3-61
ZPD3,9 3-53 1N758 3-61
ZPD4,3 3-53 1N759 3-61
ZPD4,7 3-53 1N914 Small Signal Diode 3-62
ZPD5,1 3-53 1N914A 3-62
ZPD5,6 3-53 1N9148 3-62
ZPD6,2 3-53 1N916 3-62
ZPD6,8 3-53 1N916A 3-62
ZPD7,5 3-53 1N9168 3-62
ZPD8,2 3-53 1N957 Zener Diode 3-63
ZPD9,1 3-53 1N958 3-63
ZPD10 3-53 1N959 3-63
ZPD11 3-53 1N960 3-63
ZPD12 3-53 1N961 3-63
ZPD13 3-53 1N962 3-63
ZPD15 3-53 1N963 3-63
ZPD16 3-53 1N964 3-63
ZPD18 3-53 1N965 3-63
ZPD20 3-53 1N966 3-63
ZPD22 3-53 1N967 3-63
ZPD24 3-53 1N968 3-63
ZPD27 3-53 1N969 3-63
ZPD30 3-53 1N970 3-63
ZPD33 3-53 1N971 3-63
1N456 Small Signal Diode 3-55 1N972 3-63
1N456A 3-55 1N973 3-63
1N457 3-55 1N3064 Small Signal Diode 3-64
1N457A 3-55 lN3070 3-65
1N458 3-55 1N3595 3-66
1N458A 3-55 1N3600 3-67
1N459 3-55 1N4001 Rectifier 3-68
1N459A 3-55 1N4002 3-68
1N461A 3-56 1N4003 3-68
1N462A 3-56 1N4004 3-68
1N463A 3-56 1N4005 3-68
1N464A 3-56 1N4006 3-68
1N4828 3-57 1N4007 3-68
1N4838 3-57 1N4009 Small Signal Diode 3-69
1N4848 3-57 1N4099 Zener Diode 3-70
1N4858 3-57 1N4100 3-70
1N4868 3-57 1N4101 3-70
1N625 3-58 lN4102 3-70
1N626 3-58 1N4103 3-70
1N627 3-58. 1N4104 3-70
1N628 3-58 1N4105 3-70
lN629 3-58 1N4106 3-70
1N658 3-59 1N4107 3-70

viii
 NUMERIC PRODUCT LISTING (Cont'd)

Device Type Page No. Device Type Page No.

1N4108 3-70 1N4748 Zener Diode 3-75

1N4109 3-70 1N4749 3-75
1N4110 3-70 1N4750 3-75
1N4111 3-70 1N4751 3-75
1N4112 3-70 1N4752 3-75
1N4113 3-70 1N4933 Rectifier 3-77
1N4114 3-70 1N4934 3-77
1N4115 3-70 1N4935 3-77
1N4116 3-70 1N4936 3-77
1N4117 3-70 1N4937 3-77
1N4118 3-70 1N4938 3-65
1N4119 3-70 1N5226 Zener Diode 3-78
1N4120 3-70 1N5227 3-78
1N4121 3-70 1N5228 3-78
1N4148 Small Signal Diode 3-62 1N5229 3-78
1N4149 3-62 1N5230 3-78
1N4150 3-67 1N5231 3-78
1N4151 3-72 1N5232 3-78
1N4152 3-72 1N5233 3-78
1N4153 3-72 1N5234 3-78
1N4154 3-72 1N5235 3-78
1N4244 3-11 1N5236 3-78
1N4305 3-64 1N5237 3-78
1N4306 Diode Assembly 3-73 1N5238 3-78
1N4307 3-73 1N5239 3-78
1N4376 Small Signal Diode 3-11 1N5240 3-78
1N4446 3-62 1N5241 3-78
1N4447 3-62 1N5242 3-78
1N4448 3-62 1N5243 3-78
1N4449 3-62 1N5244 3-78
1N4450 3-67 1N5245 3-78
1N4454 3-64 1N5246 3-78
1N4620 Zener Diode 3-70 1N5247 3-78
1N4621 3-70 1N5248 3-78
1N4622 3-70 1N5249 3-78
1N4623 3-70 1N5250 3-78
1N4624 3-70 1N5251 3-78
1N4625 3-70 1N5252 3-78
1N4626 3-70 1N5253 3-78
1N4627 3-70 1N5254 3-78
1N4728 3-75 1N5255 3-78
1N4729 3-75 1N5256 3-78
1N4730 3-75 1N5257 3-78
1N4731 3-75 1N5282 Small Signal Diode 3-80
1N4732 3-75 1N5390 Hot Carrier Diode 3-32
1N4733 3-75 1N5768 Diode Array 3-81
1N4734 3-75 1N5770 3-81
1N4735 3-75 1N5772 3-81
1N4736 3-75 1N5774 3-81
1N4737 3-75 1N6099 3-66
1N4738 3-75 1N6100 3-83
1N4739 3-75 1N6101 3-83
1N4740 3-75 1S44 Small Signal Diode 3-85
1N4741 3-75 1S920 3-86
1N4742 3-75 1S921 3-86
1N4743 3-75 1S923 3-86
1N4744 3-75
1N4745 3-75
1N4746 3-75
1N4747 3-75

ix
 FAIRCHILD DIODES

DIODES
COMPUTER DIODES (BY ASCENDING trr)
GLASS PACKAGE
trr BV IR vR VF IF C
DEVICE ns V nA @ V V @ mA pF Package Page
NO. Max Min Max Max Max No. No.

•
FD700 0.70 30 50 20 1.1 50 1.0 00-7 3-31
1N4376 0.75 20 100 10 1.1 50 1.0 00-7 3-11
1N4244 0.75 20 100 10 1.0 20 0.8 00-7 3-11
BAV82 0.75 15 100 12 1.0 20 1.3 00-7 3-11
FD777 0.75 15 100 8.0 1.0 20 1.3 00-7 3-31
1N5282 2.0 80 100 55 1.3 500 2.5 00-35 3-80
1N4153 2.0 75 50 50 0.88 20 4.0 00-35 3-72
1N4151 2.0 75 50 50 1.0 50 4.0 00-35 3-72
1N4305 2.0 75 100 50 0.85 10 2.0 00-35 3-64
BAV71 2.0 50 100 35 1.0 20 2.0 00-35 3-7
1N4152 2.0 40 50 30 0.88 20 4.0 00-35 3-72
1N4154 2.0 35 100 25 1.0 30 4.0 00-35 3-72
1N914 4.0 100 25 20 1.0 10 4.0 00-35 3-62
1N914A 4.0 100 25 20 1.0 20 4.0 00-35 3-62
1N914B 4.0 100 25 20 1.0 100 4.0 00-35 3-62
1N916 4.0 100 25 20 1.0 10 2.0 00-35 3-62
1N916A 4.0 100 25 20 1.0 20 2.0 00-35 3-62
1N916B 4.0 100 25 20 1.0 30 2.0 00-35 3-62
1N4148 4.0 100 25 20 1.0 10 4.0 00-35 3-62
1N4149 4.0 100 25 20 1.0 10 2.0 00-35 3-62
1N4446 4.0 100 25 20 1.0 20 4.0 00-35 3-62
1N4447 4.0 100 25 20 1.0 20 4.0 00-35 3-62
1N4448 4.0 100 25 20 1.0 100 2.0 00-35 3-62
1N4449 4.0 100 25 20 1.0 30 2.0 00-35 3-62
1N3600 4.0 75 100 50 1.0 200 2.5 00-35 3-67
FDH600 4.0 75 100 50 1.0 200 2.5 00-35 3-28
1N3064 4.0 75 100 50 1.0 10 2.0 00-35 3-64
1N4150 4.0 75 100 50 1.0 200 2.5 00-35 3-67
1N4454 4.0 75 100 50 1.0 10 2.0 00-35 3-64
BAX13 4.0 50 200 50 1.0 20 3.0 00-35 3-5
BAV74 4.0 50 100 35 1.1 300 3.0 00-35 3-10
FDH900 4.0 45 500 40 1.1 100 3.0 00-35 3-29

NOTE-Page number referenced for JAN, JANTX & JANTXV Devices is for standard device, use for electrical characteristics.

1-3
 FAIRCHILD DIODES

DIODES
COMPUTER DIODES (BY ASCENDING trr)
GLASS PACKAGE
trr BV IR VR VF IF C
DEVICE ns V nA @ V V @ rnA pF Package Page
NO. Max Min Max Max Max No. No.
FDH666 4.0 40 100 25 1.0 100 3.5 00-35 3-28
lN4450 4.0 40 50 30 1.0 200 4.0 00-35 3-67
lN4009 4.0 35 100 25 1.0 30 4.0 00-35 3-69
lN625 4.0 30 1000 20 1.5 4.0 - 00-35 3-58
FDH999 5.0 35 1000 25 1.0 10 5.0 00-35 3-29
FDH1000 100 75 50 20 1.0 500 5.0 00-35 3-30

LOW LEAKAGE DIODES (BY DESCENDING BV)

GLASS PACKAGE
BV IR VR VF IF C
DEVICE V nA @ V V @ rnA pF Package Page
NO. Min Max Max Max No. No.
lN486B 250 50 225 1.0 100 - 00-35 3-57
lN485B 200 25 180 1.0 100 - 00-35 3-57
lN459 200 25 175 1.0 3.0 - 00-35 3-55
lN459A 200 25 175 1.0 100 - 00-35 3-55
FDH300 150 1.0 125 1.0 200 6.0 00-35 3-26
lN3595 150 1.0 125 1.0 200 8.0 00-35 3-66
lN6099 150 1.0 125 1.0 200 8.0 00-35 3-66
FDH333 150 3.0 125 1.05 200 6.0 00-35 3-26
lN458A 150 5.0 125 1.0 100 - 00-35 3-55
lN484B 150 25 130 1.0 100 - 00-35 3-57
lN458 150 25 125 1.0 7.0 6.0 00-35 3-55
BAY73 125 5.0 100 1.0 200 8.0 00-35 3-9
lN483B 80 25 70 1.0 100 - 00-35 3-57
lN457 70 25 60 1.0 20 8.0 00-35 3-55
lN457A 70 25 60 1.0 100 - 00-35 3-55
lN482B 40 25 36 1.0 100 - 00-35 3-57
FJTll00 30 0.001 5.0 1.05 10 1.5 00-7 3-33
lN456A 30 25 25 1.0 100 - 00-35 3-55
lN456 30 25 25 1.0 40 10 00-35 3-55

1-4
 FAIRCHILD DIODES

DIODES
HIGH VOLTAGE SWITCHING DIODES (BY DESCENDING BV)
GLASS PACKAGE
BV IR VR VF IF C trr
DEVICE V nA @ V V @ mA pF ns Package Page
NO. Min Max Max Max Max No. No.

•
BAV21 250 100 200 1.0 100 - 50 00·35 3-3
1N661 240 10000 200 1.0 6.0 - 300 00-35 3-60
FDH400 200 100 150 1.0 200 2.0 50 00-35 3-27
1N3070 200 100 175 1.0 100 5.0 50 00-35 3-65
1N4938 200 100 175 1.0 100 5.0 50 00-35 3-65
BAV20 200 100 150 1.0 100 - 50 00-35 3-3
1N629 200 1000 175 1.5 4.0 - 1000 00-35 3-58
FDH444 150 50 100 1.1 200 2.5 60 00-35 3-27
1N628 150 1000 125 1.5 4.0 - 1000 00-35 3-58
BAY72 125 100 100 1.0 100 5.0 50 00-35 3-8
BAY80 120 100 120 1.0 150 6.0 - 00-35 3-8
BAV19 120 100 100 1.0 100 - 50 00-35 3-3
1N658 120 50 50 1.0 100 - 300 00-35 3-59
1N660 120 5000 100 1.0 6.0 - 300 00-35 3-60
1N627 100 1000 75 1.5 4.0 - 1000 00-35 3-58
1N626 50 1000 35 1.5 4.0 - 1000 00-35 3-58

GENERAL PURPOSE DIODES (BY DESCENDING BV)

GLASS PACKAGE
BV IR VR VF IF C trr
DEVICE V nA @ V V @ mA pF ns Package Page
NO. Min Max Max Max Max No. No.
1N661 240 10000 200 1.0 6.0 - 300 00-35 3-60
15923 200 100 200 1.2 200 - - 00-35 3-86
1N463A 200 500 175 1.0 100 - - 00-35 3-56
BA129 200 10 180 1.0 50 6.0 - 00-35 3-9
15922 150 100 150 1.2 200 - - 00-35 3-86
BAX16 150 100 150 1.0 1.0 10 120 00-35 3-6
1N660 120 5000 100 1.0 6.0 - - 00-35 3-60
15921 100 100 100 1.2 200 - - 00-35 3-86
BA219 100 200 50 0.85 10 5.0 - 00-35 3-14
BA128 75 100 50 1.0 50 5.0 - 00-35 3-12
1N462A 70 500 60 1.0 100 - - 00-35 3-56
BAV18 60 100 50 1.0 100 - 50 00-35 3-3
1N659 60 5000 50 1.0 6.0 - - 00-35 3-60
15920 50 100 50 1.2 200 - - 00-35 3-86

1-5
 FAIRCHILD DIODES

DIODES
GENERAL PURPOSE DIODES (BY DESCENDING BV)
GLASS PACKAGE
BV IR VR VF IF C trr
DEVICE V nA @ V V @ rnA pF ns Package Page
NO. Min Max Max Max Max No. No.
BA218 50 50 25 1.0 10 5.0 - 00-35 3-14
1544 50 50 10 1.15 10 6.0 - 00-35 3-85
FDH900 45 500 40 1.1 100 3.0 4.0 00-35 3-29
FDH999 35 1000 25 1.0 10 5.0 5.0 00-35 3-29
lN461A 30 500 25 1.0 100 10 - 00-35 3-56
BA217 30 50 10 1.0 10 5.0 - 00-35 3-14
BA130 30 100 25 1.0 10 2.0 - 00-35 3-12
BAV17 25 100 20 1.0 100 - 50 00-35 3-3
BA216 10 1500 10 1.0 15 - - 00-35 3-14

MILITARY QUALIFIED SMALL SIGNAL DIODES (NUMERIC LISTING)

GLASS PACKAGE
BV IR VR VF IF C trr
DEVICE V nA @ V V @ rnA pF ns Package Page
NO. Min Max Max Max Max No_ No.
lN457JAN 70 25 60 1.0 20 6.0 - 00-7 3-55
lN458JAN 150 25 125 1.0 7.0 6.0 - 00-7 3-55
lN459JAN 200 25 175 1.0 3.0 6.0 - 00-7 3-55
lN483BJAN 80 25 70 1.0 100 - - 00-7 3-57
lN483BJANTX 80 25 70 1.0 100 - - 00-7 3-57
lN485BJAN 200 25 180 1.0 100 - - 00-7 3-57
lN485BJANTX 200 25 180 1.0 100 - - 00-7 3-57
lN486BJAN 250 25 225 1.0 100 - - 00-7 3-57
lN486BJANTX 250 25 225 1.0 100 - - 00-7 3-57
lN914JAN 100 25 20 1.0 10 4.0 4.0 00-35 3-62
lN914JANTX 100 25 20 1.0 10 4.0 4.0 00-35 3-62
lN3064JAN 75 100 50 1.0 10 2.0 4.0 00-7 3-62
1 N3064JANTX 75 100 50 1.0 10 2.0 4.0 00-7 3-64
lN3595JAN 150 1.0 125 1.0 200 8.0 3000 00-7 3-66
lN3595JANTX 150 1.0 125 1.0 200 8.0 3000 00-7 3-66
1 N3595JANTXV 150 1.0 125 1.0 200 8.0 3000 00-7 3-66
lN3600JAN 75 100 50 1.0 200 2.5 4.0 00-7 3-67
1 N3600JANTX 75 100 50 1.0 200 2.5 4.0 00-7 3-67

1-6
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED SMALL SIGNAL DIODES (NUMERIC LISTING)
GLASS PACKAGE
BV IR VR VF IF C trr
DEVICE V nA @ V V @ mA pF ns Package Page
NO. Min Max Max Max Max No. No.

•
1N3600JANTXV 75 100 50 1.0 200 2.5 4.0 00·7 3-67
1N4148JAN 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4148JANTX 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4148JANTXV 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4148-1JAN 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4 148-1 JANTX 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4148-1 JANTXV 100 25 20 1.0 10 4.0 4.0 00-35 3-62
1N4150JAN 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4150JANTX 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4150JANTXV 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4150-1JAN 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4150-1 JANTX 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4150-1 JANTXV 75 100 50 1.0 200 2.5 4.0 00-35 3-67
1N4376JAN 20 100 10 1.1 50 1.0 0.75 00-7 3-11
1N4376JANTX 20 100 10 1.1 50 1.0 0.75 00-7 3-11
1N4454JAN 75 100 50 1.0 10 2.0 4.0 00-35 3-64
1N4454JANTX 75 100 50 1.0 10 2.0 4.0 00-35 3-64
1N4454JANTXV 75 100 50 1.0 10 2.0 4.0 00-35 3-64
1N4454-1 JAN 75 100 50 1.0 10 2.0 4.0 00-35 3-64
1N4454-JANTX 75 100 50 1.0 10 2.0 4.0 00-35 3-64
1N4454-1 JANTXV 75 100 50 1.0 10 2.0 4.0 00-35 3-64

HOT CARRIER DIODE

GLASS PACKAGE
BV IR VR VF IF C NF
DEVICE V nA @ V V @ mA pF dB Package Page
NO. Min Max Max. Max Max No. No.
FH1100 5.0 1000 1.0 0.55 10 1.0 10 00-7 3-32
1N5390 5.0 50 1.0 0.55 10 1.0 10 00-7 3-32

1-7
 FAIRCHILD DIODES

DIODES
VOLTAGE VARIABLE CAPACITOR DIODES
GLASS PACKAGE
BV IR VR C Figure of C1/C4 C3/C20
DEVICE V nA @ V pF Merit (Q) VR1 = 0.1V VR3 = 3V Package Page
NO. Min Max Typ Min VR4 = 4.0V VR20 = 20V No. No.
Min Min
RF400 35 30 30 10 350 2.0 2.0 00-35 3-51
RF401 35 30 30 7.0 350 2.0 2.0 00-35 3-51

BV IR VR C C C3 /C 25
DEVICE V nA @ V pF pF VR=3V Package Page
NO. Min Max VR=3V VR=25V VR=25V No. No.
BB121A 30 50 28 11 2.2 5.2 00-35 3-16
BB121B 30 50 28 12 2.45 5.2 00-35 3-16
BB122 30 50 28 13 2.45 5.2 00-35 3-16
BB139 30 50 28 29 5.1 5.7 00-35 3-17

PLASTIC PACKAGE
BV IR VR C Figure of C3/C30
DEVICE V nA @ V pF Merit (Q) VR3 = 3.0V Package Page
NO. Min Max Min-Max Min VR30 = 30V No. No.
BB204B - 50 30 37-42 - 2.4-2.8 TO-92 3-18
BB204G - 50 30 34-39 - 2.4-2.8 TO-92 3-18
MV104 32 50 30 37-42 100 2.5-2.8 TO-92 3-18
RF500 35 50 30 38-42 125 2.5-2.8 TO-92 3-52

BANDSWITCH DIODES
GLASS PACKAGE
BV IR VR C RS VF IF
DEVICE V nA @ V pF Q V @ mA Package Page
NO. Min Max Max Max Max No. No.
BA243 20 100 15 2.0 1.0 1.0 100 00-35 3-15
BA244 20 100 15 2.0 0.5 1.0 100 00-35 3-15

ZENER DIODES (BY ASCENDING VZ)

GLASS PACKAGE
Vz Tol: Zz @IZ IR VR T.C. PD
DEVICE V ±VZ Q mA /1 A @ V %/OC mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.
1N746A 3.3 5 28 20 10 1.0 -.070 500 00-35 3-61
1N4620 3.3 5 1650 0.25 7.5 1.5 - 500 00-35 3-70
1N5226B 3.3 5 28 20 25 1.0 (-.070) 500 00-35 3-78
BZX55C3V3 3.3 5 85 5.0 40 1.0 -.060 500 00-35 3-19
BZY88C3V3 3.3 5 22 20 3.0 1.0 (-.091) 500 DO-35 3-21
ZPD3,3 3.3 5 90 5.0 - - (-.080) 500 DO-35 3-53

Tolerance: All zener diodes are also available in ± 1%, ±2%, ± 10% and ±20% tolerances.

1-8
 FAIRCHILD DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol.· Zz @IZ IR VR T.C. Po
DEVICE V ±vz n m,A J.tA @ V %;oC mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.

•
1N4728A 3.3 5 10 76 100 1.0 - 1000 00-41 3-75
BZX85C3V3 3.3 5 20 80 40 1.0 -.065 1000 00-41 3-20
1N747A 3.6 5 24 20 10 1.0 -.065 500 00-35 3-61
1N4621 3.6 5 1700 0.25 7.5 2.0 - 500 00-35 3-70
1N5227B 3.6 5 24 20 15 1.0 (-.065) 500 00-35 3-78
BZX55C3V6 3.6 5 85 5.0 40 1.0 -.055 500 00-35 3-19
BZY88C3V6 3.6 5 20 20 3.0 1.0 (-.069) 500 00-35 3-21
ZPD3,6 3.6 5 90 5.0 - - (-.080) 500 00-35 3-53
1N4729A 3.6 5 10 69 100 1.0 - 1000 00-41 3-75
BZX85C3V6 3.6 5 15 60 20 1.0 -.065 1000 00-41 3-20
1N748A 3.9 5 23 20 10 1.0 -.060 500 00-35 3-61
1N4622 3.9 5 1650 0.25 5.0 2.0 - 500 00-35 3-70
1N5228B 3.9 5 23 20 10 1.0 (-.060) 500 00-35 3-78
BZX55C3V9 3.9 5 80 5.0 40 1.0 -.050 500 00-35 3-19
BZY88C3V9 3.9 5 18 20 3.0 1.0 (-.062) 500 00-35 3-21
ZPD3,9 3.9 5 90 5.0 - - (-.070) 500 00-35 3-53
1N4730A 3.9 5 9.0 64 50 1.0 - 1000 00-41 3-75
BZX85C3V9 3.9 5 15 60 10 1.0 -.045 1000 00-41 3-20
1N749A 4.3 5 22 20 2.0 1.0 ±.055 500 00-35 3-61
1N4623 4.3 5 1600 0.25 4.0 2.0 - 500 00-35 3-70
1N5229B 4.3 5 22 20 5.0 1.0 (± .055) 500 00-35 3-78
BZX55C4V3 4.3 5 70 5.0 40 1.5 -.040 500 00-35 3-19
BZY88C4V3 4.3 5 17 20 3.0 1.0 (-.047) 500 00-35 3-21
ZPD4,3 4.3 5 90 5.0 - - (-.060) 500 00-35 3-53
1N4731A 4.3 5 9.0 58 10 1.0 - 1000 00-41 3-75
BZX85C4V3 4.3 5 13 50 3.0 1.0 -.020 1000 00-41 3-20
1N750A 4.7 5 19 20 2.0 1.0 ±.043 500 00-35 3-61
1N4624 4.7 5 1550 0.25 10 3.0 - 500 00-35 3-70
1N5230B 4.7 5 19 20 5.0 2.0 (± .030) 500 00-35 3-78
BZX55C4V7 4.7 5 60 5.0 30 1.5 -.020 500 00-35 3-19
BZY88C4V7 4.7 5 17 20 3.0 2.0 (-.032) 500 00-35 3-21
ZPD4,7 4.7 5 78 5.0 - - (-.050) 500 00-35 3-53
1N4732A 4.7 5 8.0 53 10 1.0 - 1000 00-41 3-75
BZX85C4V7 4.7 5 13 45 3.0 1.5 +.005 1000 00-41 3-20
1N751A 5.1 5 17 20 1.0 1.0 ±.030 500 00-35 3-61
1N4625 5.1 5 1500 0.25 10 3.0 - 500 00-35 3-70

Tolerance: All zener diodes are also available in ± 1%, 2±'10, ± 10% and ±20% tolerances.

1-9
 FAIRCHILD ·DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol: Zz @IZ IR VR T.C. PD
DEVICE V ±VZ f! mA /lA @ V %;oC mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.
lN5231B 5.1 5 17 20 5.0 2.0 (± .030) 500 00·35 3·78
BZX55C5Vl 5.1 5 35 5.0 2.0 1.0 +.010 500 00·35 3·19
BZY88C5Vl 5.1 5 11 20 1.0 2.0 (-.030) 500 00·35 3·21
ZPD5,l 5.1 5 60 5.0 0.1 0.8 (+.040) 500 00·35 3·53
lN4733A 5.1 5 7.0 49 10 1.0 - 1000 00-41 3-75
BZX85C5Vl 5.1 5 10 45 1.0 2.0 +.010 1000 00-41 3-20
lN752A 5.6 5 11 20 1.0 1.0 +.028 500 00-35 3-61
lN4626 5.6 5 1400 0.25 10 4.0 - 500 00-35 3-70
lN5232B 5.6 5 11 20 5.0 3.0 (± .038) 500 00-35 3-78
BZX55C5V6 5.6 5 25 5.0 2.0 1.0 +.025 500 00-35 3-19
BZY88C5V6 5.6 5 8 20 1.0 2.0 (+.054) 500 00-35 3-21
ZPD5,6 5.6 5 40 5.0 0.1 1.0 (+.060) 500 00-35 3-53
lN4734A 5.6 5 5.0 45 10 2.0 - 1000 00-41 3-75
BZX85C5V6 5.6 5 7.0 45 1.0 2.0 +.025 1000 00-41 3-20
lN5233B 6.0 5 7.0 20 5.0 3.5 (+.038) 500 00-35 3-78
lN753A 6.2 5 7.0 20 0.1 1.0 +.045 500 00-35 3-61
lN4627 6.2 5 1200 0.25 10 5.0 - 500 00-35 3-70
lN5234B 6.2 5 7.0 20 5.0 4.0 (+.045) 500 00-35 3-78
BZX55C6V2 6.2 5 10 5.0 2.0 2.0 +.032 500 00-35 3-19
BZY88C6V2 6.2 5 3.1 20 1.0 2.0 (+.065) 500 00-35 3-21
ZPD6,2 6.2 5 10 5.0 0.1 2.0 (+.070) 500 00-35 3-53
lN4735A 6.2 5 2.0 41 10 3.0 - 1000 00-41 3-75
BZX85C6V2 6.2 5 4.0 35 1.0 3.0 +.032 1000 00-41 3-20
lN754A 6.8 5 5.0 20 0.1 1.0 +.050 500 00-35 3-61
lN957B 6.8 5 4.5 18.5 150 5.2 +.050 500 00-35 3-63
lN4099 6.8 5 200 0.25 10 5.2 - 500 00-35 3-70
lN5235B 6.8 5 5.0 20 3.0 5.0 (+.050) 500 00-35 3-78
BZX55C6V8 6.8 5 8.0 5.0 2.0 3.0 +.040 500 00-35 3-19
BZY88C6V8 6.8 5 3.0 20 1.0 3.0 (+.070) 500 00-35 3-21
ZPD6,8 6.8 5 8.0 5.0 0.1 3.0 (+.070) 500 00-35 3-53
lN4736A 6.8 5 3.5 37 10 4.0 - 1000 00-41 3-75
BZX85C6V8 6.8 5 3.5 35 1.0 4.0 +.040 1000 00-41 3-20
lN755A 7.5 5 6.0 20 0.1 1.0 +.058 500 00-35 3-61

Tolerance: All zener diodes are also available in ± 1%, ±2%, ± 10%, and ±20% tolerances.

1-10
 FAIRCHILD DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol: Zz @IZ IR VR T.C. Po
DEVICE V ±vz n mA J.tA @ V %/oc mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.

•
lN958B 7.5 5 5.5 16.5 75 5.7 +.058 500 00·35 3·63
lN4100 7.5 5 200 0.25 10 5.7 - 500 00-35 3-70
lN5236B 7.5 5 6.0 20 3.0 6.0 (+.058) 500 00-35 3-78
BZX55C7V5 7.5 5 7.0 5.0 2.0 5.0 +.045 500 00-35 3-19
BZY88C7V5 7.5 5 5.0 20 0.5 3.0 (+.079) 500 00-35 3-21
ZPD7,5 7.5 5 7.0 5.0 0.1 5.0 (+.070) 500 00-35 3-53
lN4737A 7.5 5 4.0 34 10 5.0 - 1000 00-41 3-75
BZX85C7V5 7.5 5 3.0 35 1.0 4.5 +.045 1000 00-41 3-20
lN756A 8.2 5 8.0 20 0.1 1.0 +.062 500 00-35 3-61
lN4101 8.2 5 200 0.25 1.0 6.3 - 500 00-35 3-70
lN959B 8.2 5 6.5 15 50 6.2 +.062 500 00-35 3-63
lN5237B 8.2 5 8.0 20 3.0 6.5 (+.062) 500 00-35 3-78
BZX55C8V2 8.2 5 7.0 5.0 2.0 6.0 +.048 500 00-35 3-19
BZY88C8V2 8.2 5 6.0 20 0.4 3.0 (+.073) 500 00-35 3-21
ZPD8,2 8.2 5 7.0 5.0 0.1 6.0 (+.070) 500 00-35 3-53
lN4738A 8.2 5 4.5 31 10 6.0 - 1000 00-41 3-75
BZX85C8V2 8.2 5 5.0 25 1.0 5.0 +.048 1000 00-41 3-20
lN4102 8.7 5 200 0.25 1.0 6.7 - 500 00-35 3-70
lN5238B 8.7 5 8.0 20 3.0 6.5 (+.065) 500 00-35 3-78
lN757A 9.1 5 10 20 0.1 1.0 +.068 500 00-35 3-61
lN960B 9.1 5 7.5 14 25 6.9 +.068 500 00-35 3-63
lN4103 9.1 5 200 0.25 1.0 7.0 - 500 00-35 3-70
lN5239B 9.1 5 10 20 3.0 7.0 (+.068) 500 00-35 3-78
BZX55C9Vl 9.1 5 10 5.0 2.0 7.0 +.050 500 00-35 3-19
BZY88C9Vl 9.1 5 7.0 20 0.4 5.0 (+.077) 500 00-35 3-21
ZPD9,1 9.1 5 10 5.0 0.1 7.0 (+.080) 500 00-35 3-53
lN4739A 9.1 5 5.0 28 10 7.0 - 1000 00-41 3-75
BZX85C9Vl 9.1 5 5.0 25 1.0 6.5 +.051 1000 00-41 3-20
lN758A 10 5 17 20 0.1 1.0 +.075 500 00-35 3-61
lN961B 10 5 8.5 12.5 10 7.6 +.072 500 00-35 3-63
lN4104 10 5 200 0.25 1.0 7.6 - 500 00-35 3-70
lN5240B 10 5 17 20 3.0 8.0 (+.075) 500 00-35 3-78
BZX55Cl0 10 5 15 5.0 2.0 7.5 +.055 500 00-35 3-19
BZY88Cl0 10 5 25 5.0 2.5 6.7 (+.072) 500 00-35 3-21
ZPD10 10 5 15 5.0 0.1 7.5 (+.080) 500 00-35 3-53
'Tolerance: All zener dIodes are also available in ± 1%. ± 2%. ± 10% and ± 20% tolerances.

1-11
 FAIRCHILD DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol: Zz @IZ IR VR T.C. Po
DEVICE V ±VZ n mA JlA @ V %IOC mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.
1N4740A 10 5 7,0 25 10 7,6 - 1000 00-41 3-75
BZX85C10 10 5 7,0 25 0,5 7,0 +,055 1000 00'41 3-20
1N962B 11 5 9,5 11.5 5,0 8.4 +,073 500 00-35 3-63
1N4105 11 5 200 0,25 0,05 8,5 - 500 00-35 3-70
1N5241B 11 5 22 20 2,0 8.4 (+,076) 500 00-35 3-78
BZX55C11 11 5 20 5,0 2,0 8,5 +,060 500 00-35 3-19
BZY88C11 11 5 35 5,0 2,5 7,37 (+,073) 500 00-35 3-21
ZPD11 11 5 20 5,0 0,1 8,5 (+,090) 500 00-35 3-53
1N4741A 11 5 8,0 23 5,0 8.4 - 1000 00-41 3-75
BZX85C11 11 5 8,0 20 0,5 7,7 +,060 1000 00-41 3-20
1N759A 12 5 30 20 0,1 1.0 +,077 500 00-35 3-61
1N963B 12 5 11.5 10,5 5,0 9,1 +,076 500 00-35 3-63
1N4106 12 5 200 0,25 0,05 9,2 - 500 00-35 3-70
1N5242B 12 5 30 20 1.0 9,1 (+,077) 500 00-35 3-78
BZX55C12 12 5 20 5,0 2,0 9,0 +,065 500 00-35 3-19
BZY88C12 12 5 35 5,0 2,5 8,04 (+,076) 500 00-35 3-21
ZPD12 12 5 20 5,0 0,1 9,0 (+,090) 500 00-35 3-53
1N4742A 12 5 9,0 21 5,0 9,1 - 1000 00-41 3-75
BZX85C12 12 5 9,0 20 0,5 8.4 +,065 1000 00-41 3-20
1N964B 13 5 13 9,5 5,0 9,9 +,079 500 00-35 3-63
1N4107 13 5 200 0,25 0,05 9,9 - 500 00-35 3-70
1N5243B 13 5 13 9,5 0,5 9,9 (+,079) 500 00-35 3-78
BZX55C13 13 5 26 5,0 2,0 10 +,070 500 00-35 3-19
BZY88C13 13 5 35 5,0 2,5 8,71 (+,079) 500 00-35 3-21
ZPD13 13 5 25 5,0 0,1 10 (+,090) 500 00-35 3-53
1N4743A 13 5 10 19 5,0 9,9 - 1000 00-41 3-75
BZX85C13 13 5 10 20 0,5 9,1 +,065 1000 00-41 3-20
1N4108 14 5 200 0,25 0,05 10,7 - 500 00-35 3-70
1N5244B 14 5 15 9,0 0,1 10 (+,082) 500 00-35 3-78
1N965B 15 5 16 8,5 5,0 11.4 +,082 500 00-35 3-63
1N4109 15 5 100 0,25 0,05 11.4 - 500 00-35 3-70
1N5245B 15 5 16 8,5 0,1 11 (+,082) 500 00-35 3-78
BZX55C15 15 5 30 5,0 2,0 11 +,070 500 00-35 3-19
BZY88C15 15 5 40 5,0 2,5 10,05 (+,082) 500 00-35 3-21
ZPD15 15 5 30 5,0 0,1 11 (+,090) 500 00-35 3-53
• Tolerance: All zener diodes are also available in ± 1%, ± 2%, ± 10% and ± 20% tolerances,

1-12
 FAIRCHILD DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol: Zz @IZ IR VR T.C. PD
DEVICE V ±VZ n mA /lA @ V %IOC mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.

•
1N4744A 15 5 14 17 5.0 11.4 - 1000 00·41 3-75
BZX85C15 15 5 15 15 0.5 10.5 +.070 1000 00-41 3-20
1N966B 16 5 17 7.8 5.0 12.2 +.083 500 00-35 3-63
1N4110 16 5 100 0.25 0.05 12.2 - 500 00-35 3-70
1N5246B 16 5 17 7.8 0.1 12 (+.083) 500 00-35 3-78
BZX55C16 16 5 40 5.0 2.0 12 +.075 500 00-35 3-19
BZY88C16 16 5 45 5.0 2.5 10.72 (+.083) 500 00-35 3-21
ZPD16 16 5 40 5.0 0.1 12 (+.095) 500 00-35 3-53
1N4745A 16 5 16 15.5 5.0 12.2 - 1000 00-41 3-75
BZX85C16 16 5 15 15 0.5 11.0 +.070 1000 00-41 3-20
1N4111 17 5 100 0.25 0.05 13.0 - 500 00-35 3-70
1N5247B 17 5 19 7.4 0.1 13 (+.084) 500 00-35 3-78
1N4112 18 5 100 0.25 0.05 13.7 - 500 00-35 3-63
1N967B 18 5 21 7.0 5.0 13.7 +.085 500 00-35 3-70
1N5248B 18 5 21 7.0 0.1 14 (+.085) 500 00-35 3-78
BZX55C18 18 5 55 5.0 2.0 14 +.075 500 00-35 3-19
BZY88C18 18 5 50 5.0 2.5 12.06 (+.085) 500 00-35 3-21
ZPD18 18 5 50 5.0 0.1 14 (+.095) 500 00-35 3-53
1N4746A 18 5 20 14 5.0 13.7 - 1000 00-41 3-75
BZX85C18 18 5 20 15 0.5 12.5 +.075 1000 00-41 3-20
1N4113 19 5 150 0.25 0.05 14.5 - 500 00-35 3-17
1N5249B 19 5 23 6.6 0.1 14 (+.086) 500 00-35 3-78
1N968B 20 5 25 6.2 5.0 15.2 +.086 500 00-35 3-63
1N4114 20 5 150 0.25 0.01 15.2 - 500 00-35 3-70
1N5250B 20 5 25 6.2 0.1 15 (+.086) 500 00-35 3-78
BZX55C20 20 5 55 5.0 2.0 15 +.080 500 00-35 3-19
BZY88C20 20 5 60 5.0 2.5 13.4 (+.086) 500 00-35 3-21
ZPD20 20 5 50 5.0 0.1 15 (+.100) 500 00-35 3-53
1N4747A 20 5 22 12.5 5.0 15.2 - 1000 00-41 3-75
BZX85C20 20 5 24 10 0.5 14 +.075 1000 00-41 3-20
1N969B 22 5 29 5.6 5.0 16.7 +.087 500 00-35 3-63
1N4115 22 5 150 0.25 0.01 16.8 - 500 00-35 3-70
1N5251B 22 5 29 5.6 0.1 17 (+.087) 500 00-35 3-78
BZX55C22 22 5 55 5.0 2.0 17 +.080 500 00-35 3-19
BZY88C22 22 5 65 5.0 2.5 14.74 (+.087) 500 00-35 3-21
ZPD22 22 5 55 5.0 0.1 17 (+.100) 500 00-35 3-53
1N4748A 22 5 23 11.5 5.0 16.7 - 1000 00-41 3-75
• Tolerance: All zener diodes are also available In ± 1%, ±2%, ± 10% and ±20% tolerance.

1-13
 FAIRCHILD DIODES

DIODES
ZENER DIODES (BY ASCENDING VZ)
GLASS PACKAGE
Vz Tol: Zz @Iz IR VR T.C. Po
DEVICE V ±VZ n mA p.A @ V %/oc mW Package Page
NO. Nom % Max Max Typ (Max) TA=25°C No. No.
BZX85C22 22 5 25 10 0.5 15.5 +.080 1000 00-41 3-20
1N970B 24 5 33 5.2 5.0 18.2 +.088 500 00-35 3-63
1N4116 24 5 150 0.25 0.01 18.3 - 500 00-35 3-70
1N.5252B 24 5 33 5.2 0.1 18 (+.088) 500 00-35 3-78
BZX55C24 24 5 80 5.0 2.0 18 +.085 500 00-35 3-19
BZY88C24 24 5 75 5.0 2.5 16.08 (+.088) 500 00-35 3-21
ZPD24 24 5 80 5.0 0.1 18 (+.100) 500 00-35 3-53
1N4749A 24 5 25 10.5 5.0 18_2 - 1000 00-41 3-75
BZX85C24 24 5 25 10 0.5 17 +.080 1000 00-41 3-20
1N4117 25 5 150 0.25 0.01 19.0 - 500 00-35 3-70
1N5253B 25 5 35 5.0 0.1 19 (+.089) 500 00-35 3-78
1N971B 27 5 41 4.6 5.0 20.6 +.090 500 00-35 3-63
1N4118 27 5 150 0.25 0.01 20.5 - 500 00-35 3-.70
1N5254B 27 5 41 4.6 0.1 21 (+.090) 500 00-35 3-78
BZX55C27 27 5 80 5.0 2.0 20 +.085 500 00-35 3-19
BZY88C27 27 5 85 5.0 2.5 18.09 (+.090) 500 00-35 3-21
ZPD27 27 5 80 5.0 0.1 20 (+.100) 500 00-35 3-53
1N4750A 27 5 35 9.5 5.0 20.6 - 1000 00-41 3-75
BZX85C27 27 5 30 8.0 0.5 19 +.085 1000 00-41 3-20
1N4119 28 5 200 0.25 0_01 21.3 - 500 00-35 3-70
1N5255B 28 5 44, 4.5 0.1 21 (+.091) 500 00-35 3-78
1N972B 30 5 49 4.2 5.0 22.8 +.091 500 00-35 3-63
1N4120 30 5 200 0.25 0.01 22.8 - 500 00-35 3-70
1N5256B 30 5 49 4_2 0.1 23 (+.091) 500 00-35 3-78
BZX55C30 30 5 80 5.0 2.0 22 +.085 500 00-35 3-19
BZY88C30 30 5 95 5.0 2.5 20.1 (+.091) 500 00-35 3-21
ZPD30 30 5 80 5.0 0.1 22.5 (+.100) 500 00-35 3-53
1N4751A 30 5 40 8.5 5.0 22.8 - 1000 00-41 3-75
BZX85C30 30 5 30 8.0 0.5 21 +.085 1000 00-41 3-20
1N973B 33 5 58 3.8 5.0 25.1 +.092 500 00-35 3-63
1N4121 33 5 200 0.25 0.01 25.1 - 500 00-35 3-70
1N5257B 33 5 58 3.8 0.1 25 (+.092) 500 00-35 3-78
BZX55C33 33 5 80 5.0 2.0 24 +.085 500 00-35 3-19
BZY88C33 33 5 120 5.0 2.5 21 (+.100) 500 00-35 3-21
ZPD33 33 5 80 5.0 0.1 25 (+.100) 500 00-35 3-53
1N4752A 33 5 45 7.5 5.0 25.1 - 1000 00-41 3-75
BZX85C33 33 5 35 8.0 0.5 23 +.085 1000 00-41 3-20
• Tolerance: All zener diodes are also available in ± 1%. ±2%. ± 10% and ±20% tolerances.

1-14
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. Po
DEVICE V ±vz n mA /-I A @ V %/OC mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.

•
1N747AJAN 3.6 5 22 20 3.0 1.0 -.065 400 00-7 3-61
!

1N747AJANTX 3.6 5 22 20 3.0 1.0 -.065 400 00-7 3-61

1N747AJANTXV 3.6 5 22 20 3.0 1.0 -.065 400 00-7 3-61
1N748AJAN 3.9 5 20 20 2.0 1.0 -.060 400 00-7 3-61
1N748AJANTX 3.9 5 20 20 2.0 1.0 -.060 400 00-7 3-61
1N748AJANTXV 3.9 5 20 20 2.0 1.0 -.060 400 00-7 3-61
1N749AJANTXV 4.3 5 18 20 2.0 1.0 -.055 400 00-7 3-61
1N749AJANTX 4.3 5 18 20 2.0 1.0 -.055 400 00-7 3-61
1N749AJANTX 4.3 5 18 20 2.0 1.0 -.055 400 00-7 3-61
1N750AJAN 4.7 5 16 20 5.0 1.5 -.043 400 00-7 3-61
1N750AJANTX 4.7 5 16 20 5.0 1.5 -.043 400 00-7 3-61
1N750AJANTXV 4.7 5 16 20 5.0 1.5 -.043 400 00-7 3-61
1N751AJAN 5.1 5 14 20 5.0 2.0 ±.030 400 00-7 3-61
1N751AJANTX 5.1 5 14 20 5.0 2.0 ±.030 400 00-7 3-61
1N751AJANTXV 5.1 5 14 20 5.0 2.0 ±.030 400 00-7 3-61
1N752AJAN 5.6 5 8.0 20 5.0 2.5 +.032 400 00-7 3-61
1N752AJANTX 5.6 5 8.0 20 5.0 2.5 +.032 400 00-7 3-61
1N752AJANTXV 5.6 5 8.0 20 5.0 2.5 +.032 400 00-7 3-61
1N753AJAN 6.2 5 3.0 20 5.0 3.5 +.045 400 00·35 3-61
1N753AJANTX 6.2 5 3.0 20 5.0 3.5 +.045 400 00-35 3-61
1N753AJANTXV 6.2 5 3.0 20 5.0 3.5 +.045 400 00-35 3-61
1N753A-1JAN 6.2 5 3.0 20 5.0 3.5 +.045 400 00-35 3-61
1N753A-1JANTX 6.2 5 3.0 20 5.0 3.5 +.045 400 00-35 3-61
1N753A-1JANTXV 6.2 5 3.0 20 5.0 3.5 +.045 400 00-35 3-61
1N754AJAN 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1N754AJANTX 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1N754AJANTXV 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1N754A-1JAN 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1 N754A-1 JANTX 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1N754A-1JANTXV 6.8 5 3.0 20 2.0 4.0 +.050 400 00-35 3-61
1N755AJAN 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N755AJANTX 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N755AJANTXV 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N755A-1JAN 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N755A-1JANTX 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N755A-1JANTXV 7.5 5 4.0 20 2.0 5.0 +.058 400 00-35 3-61
1N756AJAN 8.2 5 5.0 20 1.0 6.0 +.062 400 00-35 3-61
1N756AJANTX 8.2 5 5.0 20 1.0 6.0 +.062 400 00-35 3-61

1-15
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. PD
DEVICE V ±VZ n mA iJ-A @ V %/"C mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.
1N756AJANTXV 8.2 5 5.0 20 1.0 6.0 +.062 400 00·35 3-61
1N756A-1JAN 8.2 5 5.0 20 1.0 6.0 +.062 400 00-35 3-61
1 N756A-1 JANTX 8.2 5 5.0 20 1.0 6.0 +.062 400 00-35 3-61
1 N756A-1 JANTXV 8.2 5 5.0 20 1.0 6.0 +.062 400 00-35 3-61
1N757AJAN 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N757AJANTX 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N757AJANTXV 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N757A-1JAN 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N757A-1JANTX 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N757A-1JANTXV 9.1 5 6.0 20 1.0 7.0 +.068 400 00-35 3-61
1N758AJAN 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N758AJANTX 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N758AJANTXV 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N758A-1JAN 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N758A-1JANTX 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N758A-1JANTXV 10 5 7.0 20 1.0 8.0 +.075 400 00-35 3-61
1N759AJAN 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1N759AJANTX 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1N759AJANTXV 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1N759A-1JAN 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1 N759A-1JANTX 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1N759A-1JANTXV 12 5 10 20 1.0 9.0 +.080 400 00-35 3-61
1N962BJAN 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1 N962BJANTX 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1N962BJANTXV 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1N962B-1JAN 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1 N962B-1 JANTX 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1N962B-1 JANTXV 11 5 9.5 11.5 5.0 8.4 +.073 400 00-35 3-63
1N963BJAN 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1 N963BJANTX 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1 N963BJANTXV 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1N963B-1JAN 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1N963B-1JANTX 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1N963B-1JANTXV 12 5 11.5 10.5 5.0 9.1 +.076 400 00-35 3-63
1N964BJAN 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63
1N964BJANTX 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63

1-16
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. PD
DEVICE V ±VZ n mA /LA @ V %/OC mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.

a
1N964BJANTXV 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63
1N964B-1JAN 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63
1N964B-1 JANTX 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63
1N964B-1 JANTXV 13 5 13 9.5 5.0 9.9 +.079 400 00-35 3-63
1N965BJAN 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N965BJANTX 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N965BJANTXV 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N965B-1JAN 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N965B-1 JANTX 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N965B-1 JANTXV 15 5 16 8.5 5.0 11 +.082 400 00-35 3-63
1N966BJAN 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N966BJANTX 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N966BJANTXV 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N966B-1JAN 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N966B-1 JANTX 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N966B-1 JANTXV 16 5 17 7.8 5.0 12 +.083 400 00-35 3-63
1N967BJAN 18 5 21 7.0 5.0 14 +.085 400 00-35 3-63
1N967BJANTX 18 5 21 7.0 5.0 14 +.085 400 00-35 3-63
1N967BJANTXV 18 5 21 7.0 5.0 14 +.085 400 00-35 3-63
1N967B-1JAN 18 5 21 7.0 5.0· 14 +.085 400 00-35 3-63
1N967B-1JANTX 18 5 21 7.0 5.0 14 +.085 400 00-35 3-63
1N967B-1JANTXV 18 5 21 7.0 5.0 14 +.085 400 00-35 3-63
1N968BJAN 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N968BJANTX 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N968BJANTXV 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N968B-1JAN 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N968B-1 JANTX 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N968B-1 JANTXV 20 5 25 6.2 5.0 15 +.086 400 00-35 3-63
1N969BJAN 22 5 29 5.6 5.0 17 +.087 400 00-35 3-63
1N969BJANTX 22 5 29 5.6 5.0 17 +.087 400 00-35 3-63
1N969BJANTXV 22 5 29 5.6 5.0 17 +.087 400 00-35 3-63
1N969B-1JAN 22 5 29 5.6 5.0 17 +.087 400 00-35 3-63
1N969B-1 JANTX 22 5 29 5.6 5.0 .17 +.087 400 00-35 3-63
1N969B-1 JANTXV 22 5 29 5.6 5.0 17 +.087 400 00-35 3-63
1N970BJAN 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63
1N970BJANTX 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63
1N970BJANTXV 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63

1-17
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. PD
DEVICE V ±VZ Q mA itA @ V %/oC mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.
lN970B-1JAN 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63
lN970B-1JANTX 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63
lN970B-1JANTXV 24 5 33 5.2 5.0 18 +.088 400 00-35 3-63
lN971BJAN 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN971BJANTX 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN971BJANTXV 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN971B-1JAN 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN971B-1JANTX 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN971B-1JANTXV 27 5 41 4.6 5.0 21 +.090 400 00-35 3-63
lN972BJAN 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
lN972BJANTX 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
lN972BJANTXV 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
lN972B-1JAN 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
lN972B-1JANTX 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
1N972B-1JANTXV 30 5 49 4.2 5.0 23 +.091 400 00-35 3-63
lN973BJAN 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
lN973BJANTX 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
lN973BJANTXV 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
lN973B-1JAN 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
lN973B-1JANTX 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
1N973B-1JANTXV 33 5 58 3.8 5.0 25 +.092 400 00-35 3-63
lN4099JAN 6.8 5 200 0.25 10 5.2 - 250 00-7 3-70
1N4099JANTX 6.8 5 200 0.25 10 5.2 - 250 00-7 3-70
1N4099JANTXV 6.8 5 200 0.25 10 5.2 - 250 00-7 3-70
lN4100JAN 7.5 5 200 0.25 10 5.7 - 250 00-7 3-70
lN4100JANTX 7.5 5 200 0.25 10 5.7 - 250 00-7 3-70
lN4100JANTXV 7.5 5 200 0.25 10 5.7 - 250 00-7 3-70
lN4101JAN 8.2 5 200 0.25 1.0 6.3 - 250 00-7 3-70
lN4101JANTX 8.2 5 200 0.25 1.0 6.3 - 250 00-7 3-70
lN4101JANTXV 8.2 5 200 0.25 1.0 6.3 - 250 00-7 3-70
lN4102JAN 8.7 5 200 0.25 1.0 6.7 - 250 00-7 3-70
lN4102JANTX 8.7 5 200 0.25 1.0 6.7 - 250 00-7 3-70
lN4102JANTXV 8.7 5 200 0.25 1.0 6.7 - 250 00-7 3-70
lN4103JAN 9.1 5 200 0.25 1.0 7.0 - 250 00-7 3-70
1N41 03JANTX 9.1 5 200 0.25 1.0 7.0 - 250 00-7 3-70
lN4130JANTXV 9.1 5 200 0.25 1.0 7.0 - 250 00-7 3-70
lN4104JAN 10 5 200 0.25 1.0 7.6 - 250 00-7 3-70
lN4104JANTX 10 5 200 0.25 1.0 7.6 - 250 00-7 3-70

1-18
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. Po
DEVICE V ±VZ {l mA p,A @ V %;oC mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.

•
1N4104JANTXV 10 5 200 0.25 1.0 7.6 - 250 00-7 3-70
1N4105JAN 11 5 200 0.25 0.05 8.5 - 250 00-7 3-70
1N4105JANTX 11 5 200 0.25 0.05 8.5 - 250 00-7 3-70
1N4105JANTXV 11 5 200 0.25 0.05 8.5 - 250 00-7 3-70
1N4106JAN 12 5 200 0.25 0.05 9.2 - 250 00-7 3-70
1N4106JANTX 12 5 200 0.25 0.05 9.2 - 250 00-7 3-70
1N4106JANTXV 12 5 200 0.25 0.05 9.2 - 250 00-7 3-70
1N4107JAN 13 5 200 0.25 0.05 9.9 - 250 00-7 3-70
1N4107JANTX 13 5 200 0.25 0.05 9.9 - 250 00-7 3-70
1N4107JANTXV 13 5 200 0.25 0.05 9.9 - 250 00-7 3-70
1N4108JAN 14 5 200 0.25 0.05 10.7 - 250 00-7 3-70
1N4108JANTX 14 5 200 0.25 0.05 10.7 - 250 00-7 3-70
1N4108JANTXV 14 5 200 0.25 0.05 10.7 - 250 00-7 3-70
1N4109JAN 15 5 100 0.25 0.05 11.4 - 250 00-7 3-70
1N4109JANTX 15 5 100 0.25 0.05 11.4 - 250 00-7 3-70
1N4109JANTXV 15 5 100 0.25 0.05 11.4 - 250 00-7 3-70
1N4110JAN 16 5 100 0.25 0.05 12.2 - 250 00-7 3-70
1N4110JANTX 16 5 100 0.25 0.05 12.2 - 250 00-7 3-70
1N4110JANTXV 16 5 100 0.25 0.05 12.2 - 250 00-7 3-70
1N4111JAN 17 5 100 0.25 0.05 13.0 - 250 00-7 3-70
1N4111JANTX 17 5 100 0.25 0.05 13.0 - 250 00-7 3-70
1N4111JANTXV 17 5 100 0.25 0.05 13.0 - 250 00-7 3-70
1N4112JAN 18 5 100 0.25 0.05 13.7 - 250 00-7 3-70
1N4112JANTX 18 5 100 0.25 0.05 13.7 - 250 00-7 3-70
1N4112JANTXV 18 5 100 0.25 0.05 13.7 - 250 00-7 3-70
1N4113JAN 19 5 150 0.25 0.05 14.5 - 250 00-7 3-70
1N4113JANTX 19 5 150 0.25 0.05 14.5 - 250 00-7 3-70
1N4113JANTXV 19 5 150 0.25 0.05 14.5 - 250 00-7 3-70
1N4114JAN 20 5 150 0.25 0.01 15.2 - 250 00-7 3-70
1N4114JANTX 20 5 150 0.25 0.01 15.2 - 250 00-7 3-70
1N4114JANTXV 20 5 150 0.25 0.01 15.2 - 250 00-7 3-70
1N4115JAN 22 5 150 0.25 0.01 16.8 - 250 00-7 3-70
1N4115JANTX 22 5 150 0.25 0.01 16.8 - 250 00-7 3-70
1N4115JANTXV 22 5 150 0.25 0.01 16.8 - 250 00-7 3-70
1N4116JAN 24 5 150 0.25 0.01 18.3 - 250 00-7 3-70
1N4116JANTX 24 5 150 0.25 0.01 18.3 - 250 00-7 3-70
1N4116JANTXV 24 5 150 0.25 0.01 18.3 - 250 00-7 3-70
lN4117JAN 25 5 150 0.25 0.01 19.0 - 250 00-7 3-70

1-19
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED ZENER DIODES
GLASS PACKAGE
Vz Tol. Zz @IZ IR VR T.C. Po
DEVICE V ±VZ Q mA IlA @ V %/oC mW Package Page
NO. Nom % Max Max Max TA=25°C No. No.
1N4117 JANTX 25 5 150 0.25 0.01 19.0 - 250 DO-7 3-70
1N4117 JANTXV 25 5 150 0.25 0.01 19.0 - 250 DO-7 3-70
lN4118JAN 27 5 150 0.25 0.01 20.5 - 250 DO-7 3-70
1N4118JANTX 27 5 150 0.25 0.01 20.5 - 250 DO-7 3-70
1N4118JANTXV 27 5 150 0.25 0.01 20.5 - 250 DO-7 3-70
lN4119JAN 28 5 200 0.25 0.01 21.3 - 250 DO-7 3-70
1N4119JANTX 28 5 200 0.25 0.01 21.3 - 250 DO-7 3-70
1N4119JANTXV 28 5 200 0.25 0.01 21.3 - 250 DO-7 3-70
lN4120JAN 30 5 200 0.25 0.01 22.8 - 250 DO-7 3-70
1N4120JANTX 30 5 200 0.25 0.01 22.8 - 250 DO-7 3-70
lN4120JANTXV 30 5 200 0.25 0.01 22.8 - 250 DO-7 3-70
lN4121JAN 33 5 200 0.25 0.01 25.1 - 250 DO-7 3-70
lN4121JANTX 33 5 200 0.25 0.01 25.1 - 250 DO-7 3-70
lN4121JANTXV 33 5 200 0.25 0.01 25.1 - 250 DO-7 3-70
lN4620JAN 3.3 5 1650 0.25 7.5 1.5 - 250 DO-7 3-70
lN4620JANTX 3.3 5 1650 0.25 7.5 1.5 - 250 DO-7 3-70
lN4620JANTXV 3.3 5 1650 0.25 7.5 1.5 - 250 DO-7 3-70
lN4621JAN 3.6 5 1700 0.25 7.5 2.0 - 250 DO-7 3-70
1N4621 JANTX 3.6 5 1700 0.25 7.5 2.0 - 250 DO-7 3-70
1N4621 JANTXV 3.6 5 1700 0.25 7.5 2.0 - 250 DO-7 3-70
lN4622JAN 3.9 5 1650 0.25 5.0 2.0 - 250 DO-7 3-70
lN4622JANX 3.9 5 1650 0.25 5.0 2.0 - 250 DO-7 3-70
lN4622JANTXV 3.9 5 1650 0.25 5.0 2.0 - 250 DO-7 3-70
lN4623JAN 4.3 5 1600 0.25 4.0 2.0 - 250 DO-7 3-70
lN4623JANTX 4.3 5 1600 0.25 4.0 2.0 - 250 DO-7 3-70
lN4623JANTXV 4.3 5 1600 0.25 4.0 2.0 - 250 DO-7 3-70
lN4624JAN 4.7 5 1550 0.25 10 3.0 - 250 DO,7 3-70
1N4624JANTX 4.7 5 1550 0.25 10 3.0 - 250 DO-7 3-70
1N4624JANTXV 4.7 5 1550 0.25 10 3.0 - 250 DO-7 3-70
lN4625JAN 5.1 5 1500 0.25 10 3.0 - 250 DO-7 3-70
lN4625JANTX 5.1 5 1500 0.25 10 3.0 - 250 DO-7 3-70
lN4625JANTXV 5.1 5 1500 0.25 10 3.0 - 250 DO-7 3-70
lN4626JAN 5.6 5 1400 0.25 10 4.0 - 250 DO-7 3-70
lN4626JANTX 5.6 5 1400 0.25 10 4.0 - 250 00-7 3-70
lN4626JANTXV 5.6 5 1400 0.25 10 4.0 - 250 DO-7 3-70
lN4627JAN 6.2 5 1200 0.25 10 5.0 - 250 DO-7 3-70
lN4627JANTX 6.2 5 1200 0.25 10 5.0 - 250 DO-7 3-70
1N4627 JANTXV 6.2 5 1200 0.25 10 5.0 - 250 DO-7 3-70

1-20
 FAIRCHILD DIODES

DIODES
MATCHED DIODE ASSEMBLIES
PLASTIC AND GLASS PACKAGES
Number of Diodes 2 2 4 4 4
Moulded Discrete Moulded Discrete Moulded
Pair Pair Quad Quad Bridge

•
Package (308) 00-7 or (310) 00-7 or (309)
00-35 00-35
VF Matching (-55°C to +100·C)

Basic Diode IF Range !:NF DEVICE DEVICE DEVICE DEVICE DEVICE PAGE
Specification mA mV NO. NO. NO. NO. NO. NO.
1N914 0.01-1.0 3.0 FA2310E FA2310U FA4310E FA4310U FA3310 3-62
1N3070 0.01-1.0 3.0 FA2320E FA2320U FA4320E FA4320U FA3320 3-65
1N3595 0.01-1.0 10 FA2330E FA2330U FA4330E FA4330U FA3330 3-66
- 0.1-10 10 lN4306 - - - - 3-73
- 0.1-10 10 - - lN4307 - - 3-73

MILITARY QUALIFIED DIODE ASSEMBLIES

PLASTIC AND GLASS PACKAGES
BV IR VR VF IF C trr
DEVICE V nA @ V V @ mA pF ns Package Page-
NO. Min Max Max Max Max No. No.
1N4306JAN 75 50 50 1.0 50 2.0 4.0 308 3-73
1N4306JANTX 75 50 50 1.0 50 2.0 4.0 308 3-73
1N4306JANTXV 75 50 50 1.0 50 2.0 4.0 308 3-73
1N4307JAN 75 50 50 1.0 50 2.0 4.0 310 3-73
1N4307JANTX 75 50 50 1.0 50 2.0 4.0 310 3-73
1N4307JANTXV 75 50 50 1.0 50 2.0 4.0 310 3-73

- Data sheet is for standard device

MONOLITHIC DIODE ARRAYS (NUMERIC LISTING)

PLASTIC - CERAMIC - METAL PACKAGES
BV VF IF ~VF trr
DEVICE V V @ mA mV ns Package Page
NO. Min Max Max Max Configuration No. No.
FSA1410M 60 1.0 100 15 10 CA8 TO-96 3-34
FSA1411M 60 1.0 100 15 10 CC8 TO-96 3-34
FSA2002M 60 1.0 100 15 10 CC8 TO-85 3-34
FSA2003M 60 1.0 100 15 10 CA8 TO-85 3-34
FSA2500M 60 1.0 100 15 10 M16 TO-85 3-36
FSA2501M 60 1.0 100 15 10 M16 TO-116-2 3-36
FSA2501P 60 1.0 100 15 10 M16 TO-116 3-36
FSA2502M 60 1.0 100 15 10 M16 TO-96 3-36

1-21
 FAIRCHILD DIODES

DIODES
MONOLITHIC DIODE ARRAYS (NUMERIC LISTING)
PLASTIC - CERAMIC - METAL PACKAGES
BV VF IF ~VF trr
DEVICE V V @ mA mV ns Package Page
NO. Min Max Max Max Configuration No. No.
FSA2503M 60 1.0 100 15 10 2M8 TO-116-2 3-39
FSA2503P 60 1.0 100 15 10 2M8 TO-116 3-39
FSA2504M 60 1.0 100 15 10 2M8 TO-86 3-39
FSA2509M 60 1.3 500 15 10 2M8 TO-116-2 3-41
FSA2509p 60 1.3 500 15 10 2M8 TO-116 3-41
FSA2510M 60 1.3 500 15 10 M16 TO-116-2 3-41
FSA2510P 60 1.3 500 15 10 M16 TO-116 3-41
FSA2563M 60 1.3 500 15 10 CC8 TO-116-2 3-43
FSA2563P 60 1.3 500 15 10 CC8 TO-116 3-43
FSA2564M 60 1.3 500 15 10 CA8 TO-116-2 3-43
FSA2564P 60 1.3 500 15 10 CA8 ' TO-116 3-43
FSA2565M 60 1.3 500 15 10 CC13 TO-116-2 3-43
FSA2565P 60 1.3 500 15 10 CC13 TO-116 3-43
FSA2566M 60 1.3 500 15 10 CA13 TO-116-2 3-43
FSA2566P 60 1.3 500 15 10 CA13 TO-116 3-43
FSA2619M 100 1.0 10 15 5 88 68 3-46
FSA2619P 100 1.0 10 15 5 88 98 3-46
FSA2620M 100 1.0 10 15 5 87 TO-116-2 3-46
FSA2620P 100 1.0 10 15 5 87 TO-116 3-46
FSA2621M 100 1.0 10 15 5 87 TO-86 3-46
FSA2702M 60 1.0 200 3 6 R4 TO-33 3-49
FSA2703M 60 1.0 200 3 6 R4 TO-72 3-49
FSA2704M 60 1.0 200 - 6 R4 TO-33 3-49
FSA2705M 60 1.0 200 - 6 R4 TO-72 3-49
FSA2719M 75 1.0 10 15 6 88 68 3-46
FSA2719P 75 1.0 10 15 6 88 98 3-46
FSA2720M 75 1.0 10 15 6 87 TO-116-2 3-46
FSA2720P 75 1.0. 10 15 6 87 TO-116 3-46
FSA2721M 75 1.0 10 15 6 87 TO-86 3-46
1N5768 60 1.0 .100 - 20 CC8 TO-85 3-81
1N5770 60 1.0 100 - 20 CA8 TO-85 3-81
1N5772 60 1.0 100 - 20 M16 TO-85 3-81
1N5774 60 1.0 100 - 20 2M8 TO-86 3-81
1N6100 75 1.0 100 - 5 87 TO-86 3-83
1N6101 75 1.0 100 - 5 87 TO-116-2 3-83

1-22
 FAIRCHILD DIODES

DIODES
MILITARY QUALIFIED DIODE ARRAYS (NUMERIC LISTING)
CERAMIC PACKAGES
BV VF IF tfr trr
DEVICE V V @ mA ns ns Package Page'
NO. Min Max Max Max Configuration No. No.

a
1N57S8JAN SO 1.0 100 40 20 GG8 TO·85 3-81
1N57S8JANTX SO 1.0 100 40 20 GG8 TO-85 3-81
1N57S8JANTXV SO 1.0 100 40 20 GG8 TO-85 3-81
1N5770JAN SO 1.0 100 40 20 GA8 TO-85 3-81
1N5770JANTX SO 1.0 100 40 20 GA8 TO-85 3-81
1N5770JANTXV SO 1.0 100 40 20 GA8 TO-85 3-81
1N5772JAN 60 1.0 100 40 20 M16 TO-85 3-81
1N5772JANTX SO 1.0 100 40 20 M16 TO-85 3-81
1N5772JANTXV SO 1.0 100 40 20 M16 TO-85 3-81
1N5774JAN 60 1.0 100 40 20 2M8 TO-86 3-81
1N5774JANTX 60 1.0 100 40 20 2M8 TO-86 3-81
1N5774JANTXV SO 1.0 100 40 20 2M8 TO-86 3-81
1NS100JAN 75 1.0 100 15 5.0 87 TO-86 3-83
1NS100JANTX 75 1.0 100 15 5.0 87 TO-8S 3-83
1NS100JANTXV 75 1.0 100 15 5.0 87 TO-86 3-83
1NS101JAN 75 1.0 100 15 5.0 87 TO-11S-2 3-83
1NS101JANTX 75 1.0 100 15 5.0 87 TO-11S-2 3-83
1NS101JANTXV 75 1.0 100 15 5.0 87 TO-11S-2 3-83

CONFIGURATIONS

2M8 4M4 M16

1-23
 FAIRCHILD RECTIFIERS

RECTIFIERS
GENERAL PURPOSE RECTIFIERS
GLASS PACKAGE
VR IR VF IF VFM 10
DEVICE V @ p,A V @ A V @ A Package Page
NO. Min Max Max No. No.
1N4001 50 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4002 100 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4003 200 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4004 400 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4005 600 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4006 800 10 1.1 1.0 1.6 1.0 00-41 3-68
1N4007 1000 10 1.1 1.0 1.6 1.0 00-41 3-68

FAST RECOVERY RECTIFIERS

GLASS PACKAGE
VR IR VF IF trr
DEVICE V @ p,A V @ A ns Package Page
NO. Min Max Max Max No. No.
1N4933 50 5.0 1.2 1.0 200 00-41 3-77
1N4934 100 5.0 1.2 1.0 200 00-41 3-77
1N4935 200 5.0 1.2 1.0 200 00-41 3-77
1N4936 400 5.0 1.2 1.0 200 00-41 3-77
1N4937 600 5.0 1.2 1.0 200 00-41 3-77

1-24
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

AAYll BA219 BAW55 BAY72

AAY48 BA130 BAW62 lN4448
AAY49 BA129 BAW75 BAW75
AAZ10 BA130 BAW76 BAW76

•
AAZ13 BA130 BAW77 BAY72

AAZ15 BA219 BAX12 BAY74

AAZ17 BA219 BAX13 BAX13
AAZ18 BA130 BAX15 FDH400
AAl12 FDH999 BAX16 BAX16
AAl13 BA128 BAX17 FDH400

AAl14 BA130 BAX20 FDH444

AAl16 BA130 BAX21 FDH444
AAl17 BA219 BAX33 FA2310E
AAl18 BA219 BAX34 FA2310E
AA129 BA130 BAX35 FA2310E

AA131 FDH900 BAX36 FA2320E

AA132 BA219 BAX37 FA2320E
AA133 BA129 BAX38 FA2320E
AA135 BA129 BAX39 FA4310E
AA136 BA129 BAX40 FA4310E

AA137 BA130 BAX41 FA4310E

AA138 BA130 BAX42 FA4320E
AA139 BA129 BAX43 FA4320E
AA144 BA219 BAX44 FA4320E
BAV17 BAV17 BAX83 BAY72

BAV18 BAV18 BAX84 BAY71

BAV19 BAV19 BAX85 BAY71
BAV20 BAV20 BAX86A BAY71
BAV21 BAV21 BAX86B BAY71
BAV24 BAY74 BAX87 BAY71

BAV50 FSA2510M BAX88 BA129

BAV68 BAY72 BAX89B BAY71
BAV69 FDH400 BAX89H BAY71
BAW10 BAY74 BAX90A BAY71
BAWll BAY72 BAX90B BAY71

BAW12 FDH444 BAX91A BAY71

BAW13 FDH400 BAX91B BAY71
BAW16 FDH300 BAX91C BAY71
BAW17 FDH300 BAX92 BAY71
BAW18 FDH300 BAX93 BAY71

BAW24 BAY74 BAX94 BAY71

BAW25 FDH600 BAY 17 BAY72
BAW26 FDH600 BAY18 BAY72
BAW33 BAY72 BAY19 BAY72
BAW43 BAY73 BAY20 FDH400

BAW45 BAY71 BAY38 BAY71

BAW46 BAY72 BAY41 BAY71
BAW47 BAY72 BAY42 BAY71
BAW48 BAY71 BAY43 lN4148
BAW49 BAY73 BAY60 BAY74

BAW50 FDH400 BAY61 BAY74

BAW51 BAY72 BAY63 BAY74
BAW52 FDH400 BAY68 BAY74
BAW53 BAY74 BAY69 BAY74
BAW54 BAY74 BAY71 BAY71

1-25
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

BAY72 BAY72 BB122 BB122

BAY73 BAY73 BB139 BB139
BAY74 BAY74 BB141A BB121A
BAY80 BAY80 BB141B BB121B
BAY82 BAY82 BB142 BB122

BAY93 BAY71 BB204B BB204B

BAY94 BAY71 BB204G BB204G
BAY95 BAY71 BB205A BB121B
BA127 BA128 BB205B BB121A
BA128 BA128 BB205G BB122

BA129 BA129 BB209 BB139

BA130 BA130 BYW37 1N400 1
BA136 BA128 BYW38 lN4002
BA152 FDH900 BYW39 lN4003
BA154 FDH900 BYW40 lN4004

BA155 BA129 BYW41 lN4005

BA164 BA164 BYX58- 100 lN4002
BA165 FDH900 BYX58 - 200 1N4003
BA166 BA130 BYX58- 300 lN4004
BA167 BA130 BYX58- 400 lN4004

BA192 FDH400 BYX58 - 50 lN4001

BA193 FDH400 BYX92 - 100 lN4934
BA194 FDH400 BYX92 - 200 lN4935
BA197 FDH400 BYX92-50 lN4933
BA198 FDH400 BYX93 - 300 lN4936

BA199 - 250 lN4936 BYX93- 400 lN4936

BA 199 - 350 lN4936 BYY31 lN4003
BA199 - 450 lN4937 BYY32 lN4004
BA199 - 550 lN4937 BYY33 lN4005
BA200 BA218 BYY34 lN4005

BA201 BA219 BY201/2 lN4935

BA202 BA219 BY201/3 lN4936
BA209 BA219 BY201/4 lN4936
BA210 BA219 BY201/6 lN4937
BA211 BA219 BY401 lN4001

BA212 BA219 BY402 lN4002

BA213 BA219 BY403 lN4003
BA214 BA219 BY404 lN4004
BA216 BA216 BZV17 BZX55
BA217 BA217 BZV19 BZX55

BA218 BA218 BZX30 BZX55

BA219 BA219 BZX31 BZX55
BA243 BA243 BZX46 BZX55
BA244 BA244 BZX55 BZX55
BA316 FDH900 BZX58 BZX55

BA317 FDH900 BZX59 BZX55

BA318 FDH900 BZX61 BZX85
BB104B BB204B BZX89 BZX55
BB104G BB204G BZX71 BZX55
BB105A BB121B BZX79 BZX55

BB105B BB121A BZX83 BZX55

BB105G BB122 BZX85 BZX85
BB109 BB139 BZX95 BZX55
BB121A BB121A BZX96 BZX55
BB121B BB121B BZX97 BZX55

1-26
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

eZV83 eZX55 FA4330 FA4330

eZV85 eZX55 FA4331 FA4331
eZV88 eZV88 FA4332 FA4332
eZV92 eZX85 FA4333 FA4333
eZV94 eZX55 FA4334 FA4334

DA1701
DA1702
DA1703
DA1704
IN4148
IN4148
IN414B
IN414B
FA4335
FA4360
FA4361
FDH300
FA4335
FA4360
FA4361
FDH300
I
FA2310 FA2310 FDH333 FDH333

FA2311 FA2311 FDH400 FDH400

FA2312 FA2312 FDH444 FDH444
FA2313 FA2313 FDH600 FDH600
FA2320 FA2320 FDHB66 FDH666
FA2321 FA2321 FDH900 FDH900

FA2322 FA2322 FDH999 FDH999

FA2323 FA2323 FDN400 FDH400
FA2324 FA2324 FDN444 FDH444
FA2325 FA2325 FDN600 FDH600
FA2330 FA2330 FDN666 FDH666

FA2331 FA2331 FDN700 FD700

FA2332 FA2332 FDN777 FD777
FA2333 FA2333 FD100 lN4153
FA2334 FA2334 FD300 FDH300
FA2335 FA2335 FD333 FDH333

FA2360 FA23BO FD400 FDH400

FA2361 FA2361 FD444 FDH444
FA3310 FA3310 FD600 FDH600
FA3311 FA3311 FD666 FDH666
FA3312 FA3312 FD700 FD700

FA3313 FA3313 FD777 FD777

FA3320 FA3320 FHll00 FHll00
FA3321 FA3321 FH1200 FHll00
FA3322 FA3322 FJTll00 FJTll00
FA3323 FA3323 FJTll0l FJTll0l

FA3324 FA3324 GER4001 lN4001

FA3325 FA3325 GER4002 lN4002
FA3330 FA3330 GER4003 lN4003
FA3331 FA3331 GER4004 lN4004
FA3332 FA3332 GER4005 lN4005

FA3333 FA3333 GER4006 lN4006

FA3334 FA3334 GER4007 lN4007
FA3335 FA3335 MCll03F FSA2500M
FA3360 FA3360 MCll03L FSA2501M
FA3361 FA3361 MCll03P FSA2501

FA4310 FA4310 MCll05F FSA2002M

FA4311 FA4311 MCll05L FSA25B3M
FA4312 FA4312 MCll05P FSA2563
FA4313 FA4313 MCll06F FSA2003M
FA4320 FA4320 MCll0BL FSA2564M

FA4321 FA4321 MCll06P FSA2564

FA4322 FA4322 MCll07F FSA2504M
FA4323 FA4323 MCll07L FSA2503M
FA4324 FA4324 MCll07P FSA2503
FA4325 FA4325 RF400 RF400

1-27
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

RF401 RF401 lNl044 lN4004

RF500 RF500 lNl045 lN4004
TID121 FSA2563M lNl046 lN4001
TID122 FSA2563M lNl047 lN4002
TID123 FSA2564M lNl048 lN4003

TID124 FSA2564M lNl049 lN4003

TID125 FSA2510M lNl050 lN4004
TID126 FSA2510M lNl051 lN4004
TID131 FSA2504M lNl052 1N400 1
TID132 FSA2504M lNl053 lN4002

TID 133 FSA2509M lNl054 lN4003

TID134 FSA2509M lNl055 lN4003
TID135N FSA2510M lNl056 lN4004
TID136N FSA2510M lN1057 lN4004
TID139F FSA2721M lNl06 lN4004

TID139N FSA2720M lNl07 FDH999

TID140F FSA2721M lNl08 lN4448
TID 140N FSA2720M lNl081 lN4002
TID21A FSA2002M lNl082 lN4003
TID22A FSA2002M lNl083 lN4004

TID23A FSA2003M lNl083A lN4004

TID24A FSA2003M lNl084 lN4004
TlD25A FSA2500M lNl084A lN4004
TID26A FSA2500M lNl093 FDH999
lNl00 lN4447 lNl095 lN4005

lNl00A lN4448 lNl096 lN4005

lNl005 lN4004 lNll00 lN4002
lNl007 lN4004 lNll0l lN4003
lNl008 lN4004 lNl102 lN4004
lNl0l 1N3070 lN1103 lN4004

lNl013 lN4004 lNll04 lN4005

lNl016 lN4004 lNll05 lN4005
lNl02 lN3070 lNl11 lN4148
lNl021 lN4004 lN112 lN4148
lNl022 lN4004 lN1126 lN4004

lNl023 lN4004 lN1127 lN4005

lNl024 lN4004 lN1128 lN4005
lNl028 lN4001 lN113 lN4454
lNl029 lN4002 lN114 lN4454
lNl03 lN4448 lN115 1N4454

lNl030 lN4003 lN116 lN4454

lNl031 lN4003 lNII6A lN4454
lNl032 1N4004 1N1169 lN4004
lNl033 lN4004 lN1169A lN4004
lNl034 lN4001 lNI17 lN4454

lNl035 lN4002 lNI17A lN4454

lNl036 lN4003 lNI170 lN4148
lNl037 lN4003 lN118 lN4454
lNl038 lN4004 lN118A lN4448
lNl039 lN4004 lN119 lN4148

lNl04 lN4448 lN120 lN4148

lNl040 lN4001 lN1240 1N400 1
lNl041 lN4002 lN1241 lN4002
lNl042 lN4003 lN1242 lN4003
lNl043 lN4003 lN1243 lN4004

1-28
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN1244 lN4004 lN1512 lN4740

lN1244A lN4004 lN1512A lN4740A
lN1245 lN4005 lN1513 lN4742
lN1246 lN4005 lN1513A lN4742A
lN1251 lN1514 lN4744

•
lN4001

lN1252 lN4002 lN1514A lN4744A

lN1253 lN4003 lN1515 lN4746
lN1254 lN4004 lN1515A lN4746A
lN1255 lN4004 lN1516 lN4748
lN1255A lN4004 lN1516A lN4748A

lN1256 lN4005 lN1517 lN4750

lN1257 lN4005 lN1517A lN4750A
lN126 lN4148 lN1518 lN4730
lN126A lN4148 lN1518A lN4730A
lN127 lN3070 lN1519 lN4732

lN127A lN3070 lN1519A lN4732A

lN128 lN4148 lN152 lN4003
lN128A lN4148 lN1520 lN4734
lN132 lN4148 lN1520A lN4734A
lN133 lN4148 lN1521 lN4736

lN135 lN4148 lN1521A lN4736A

lN137A lN483 lN1522 lN4738
lN137B lN483 lN1522A lN4738A
lN138A lN483 lN1523 lN4740
lN138B lN483 lN1523A lN4740A

lN139 lN4148 lN1524 lN4742

lN140 lN4448 lN1524A lN4742A
lN1406 lN4005 lN1525 lN4744
lN141 lN4148 lN1525A lN4744A
lN1415 lN4004 lN1526 lN4746

lN142 lN4938 lN1526 lN4748

lN143 lN4938 lN1526A lN4746A
lN144 lN4454 lN1527A lN4748A
lN1440 lN4003 lN1528 lN4750
lN1441 lN4004 lN1528A lN4750A

lN1442 lN4004 lN153 lN4004

lN1445 lN4004 lN1551 lN4002
lN145 lN4449 lN1552 lN4003
lN1487 lN4002 lN1553 lN4004
lN1488 lN4003 lN1554 lN4004

lN1489 lN4004 lN1555 lN4005

lN1490 lN4004 lN1556 lN4002
lN1491 lN4005 lN1557 lN4003
lN1492 lN4005 lN1558 lN4004
lN1507 lN4730 lN1559 lN4004

lN1507A lN4730A lN1560 lN4005

lN1508 lN4732 lN1561 lN4305
lN1508A lN4732A lN1562 lN4305
lN1509 lN4734 lN1563 lN4002
lN1509A lN4734A lN1564 lN4003

lN151 lN4002 lN1565 lN4004

lN1510 lN4736 lN1566 lN4004
lN1510A lN4736A lN1567 lN4005
lN1511 lN4738 lN1568 lN4005
lN1511A lN4738A lN158 lN4004

1-29
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N1644 1N4001 1N1776 1N4745

1N1645 1N4002 1Nl776A 1N4745A
1N1646 1N4003 1Nl777 1N4746
1N1647 1N4003 1N1777A 1N4746A
1N1648 1N4004 1N1778 1N4747

1N1649 1N4004 1Nl778A 1N4747A

1N1650 1N4004 1Nl779 1N4748
1N1651 1N4004 1Nl779A 1N4748A
1N1652 1N4005 1N1780 1N4749
1N1653 1N4005 1N1780A 1N4749A

1N1692 1N4002 1N1781 1N4750

1N1693 1N4003 1N1781A 1N4750A
1N1694 1N4004 1N1782 1N4751
1N1695 1N4004 1N1782A 1N4751A
1N1696 1N4005 1N1783 1N4752

1N1697 1N4005 1N1783A 1N4752A

1N1701 1N4001 1N1875 1N4738
1N1702 1N4002 1N1876 1N4740
1N1703 1N4003 1N1877 1N4742
1N1704 1N4D04 1N1878 1N4744

1N1705 1N4004 1N1879 1N4746

1N1706 1N4005 1N1880 1N4748
1N1707 1N4001 1N1881 1N4750
1N1708 1N4002 1N1882 1N4752
1N1709 1N4003 1N190 FDH999

1N1710 1N4004 1N1907 1N4001

1N1711 1N4004 1N1908 1N4002
1N1712 1N4005 1N1909 1N4003
1N1744 1N4740 1N191 1N4148
1N175 1N3070 1N1910 1N4004

1N1763 1N4004 1N1911 1N4004

1N1763A 1N4004 1N1912 1N4005
1N1764 1N4005 1N1913 1N4005
1N1764A 1N4005 1N192 1N4148
1N1765A 1N4734A 1N1927 1N5228A

1N1766 1N4735 1N1928 1N5230A

1N1766A 1N4735A 1N1929 1N5232A
1N1767 1N4736 1N193 1N4148
1N1767A 1N4736A 1N1930 1N5235A
1N1768 1N4737 1N1931 1N5237A

1N1768A 1N4737A 1N1932 1N5240A

1N1769 1N4738 1N1933 1N5242A
1N1769A 1N738A 1N1934 1N5245A
1Nl770 1N4739 1N1935 1N5248A
1N1770A 1N4739A 1N1936 1N5251A

1N1771 1N4740 1N194 1N4148

1N1771A 1N4740A 1N194A 1N4148
1N1772 1N4741 1N195 1N4148
1N1772A 1N4741A 1N1954 1N5228A
1N1773 1N4742 1N1955 1N5230A

1N1773A 1N4742A 1N1956 1N5232A

1N1774 1N4743 1N1957 1N5235A
1N1774A 1N4743A 1N1958 1N5237A
1Nl775 1N4744 1N1959 1N5240A
1N1775A 1N4744A 1N196 1N4148

1-30
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N1960 1N5242A 1N2081 1N4002

1N1961 1N5245A 1N2082 1N4003
1N1962 1N5248A 1N2083 1N4004
1N1963 1N5251A 1N2084 1N4004

•
1N198 1N4148 1N2085 1N4005

1N198A 1N4148 1N2086 1N4005

1N1988 1N4454 1N2088 1N4001
1N198M 1N4148 1N2089 1N4001
1N1981 1N5228A 1N2090 1N400 1
1N1982 1N5230A 1N2091 1N4002

1N1983 1N5232A 1N2092 1N4003

1N1984 1N5235A 1N2093 1N4004
1N1985 1N5237A 1N2094 1N4004
1N1986 1N5240A 1N2095 1N4005
1N1987 1N5242A 1N2096 1N4005

1N1988 1N5245A 1N2103 1N4001

1N1989 1N5248A 1N2104 1N4002
1N1990 1N5251A 1N2105 1N4003
1N2013 1N4001 1N2106 1N4004
1N2014 1N4002 1N2107 1N4004

1N2015 1N4003 1N2108 1N4005

1N2016 1N4003 1N2115 1N4004
1N2017 1N4004 1N2116 1N4004
1N2018 1N4004 1N2146 FDH400
1N2019 1N4004 1N2218 1N4005

1N2020 1N4004 1N2220 1N4005

1N2026 1N4001 1N2228 1N4001
1N2027 1N4003 1N2230 1N4003
1N2028 1N4004 1N2232 1N4004
1N2029 1N4004 1N2234 1N4004

1N2030 1N4005 1N2236 1N4005

1N2031 1N4005 1N2238 1N4005
1N2032 1N4732 1N2266 1N4001
1N2033 1N4734 1N2267 1N4001
1N2034 1N4736 1N2268 1N4005

1N2035 1N4739 1N2269 1N4005

1N2036 1N4740 1N2270 1N4005
1N2037 1N4743 1N2271 1N4005
1N2038 1N4745 1N2373 1N4005
1N2039 1N4747 1N2482 1N4003

1N2040 1N4749 1N2483 1N4004

1N2069 1N4003 1N2484 1N4005
1N2069A 1N4003 1N2485 1N4003
1N2070 1N4004 1N2486 1N4004
1N2070A 1N4004 1N2487 1N4004
1N2071 1N4005 1N2488 1N4005
1N2071A 1N4005 1N2489 1N4005
1N2072 1N4001 1N251 1N4148
1N2073 1N4002 1N251A 1N4148
1N2074 1N4003 1N252 1N4148

1N2075 1N4003 1N252A 1N4148

1N2076 1N4004 1N2609 1N400 1
1N2077 1N4004 1N2610 1N4002
1N2078 1N4004 1N2611 1N4003
1N2080 1N4001 1N2612 1N4004

1-31
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN2613 lN4004 lN301A lN457

lN2614 lN4005 lN301B lN457
lN2615 lN4005 lN3016 lN4736
lN2629 lN4305 lN3016A lN4736A
lN265 lN4148 lN3016B lN4736B

lN266 lN4148 lN3017 lN4737

lN267 lN4148 lN3017A lN4737
lN268 lN4148 lN3017B lN4737A
lN270 FDH444 lN3018 lN4738
lN273 lN4448 lN3018A lN4738

lN276 lN4454 lN3018B lN4738A

lN277 lN3070 lN3019 lN4739
lN277M lN4448 lN3019A lN4739
lN278 lN4446 lN3019B lN4739A
lN279 lN4448 lN302 lN4003

lN2791 lN4004 lN302A lN4003

lN281 lN4448 lN302B lN4003
lN282 lN4449 lN3020 lN4740
lN283 FDH444 lN3020A lN4740
lN2858 lN4001 lN3020B lN4740A

lN2858A lN4001 lN3021 lN4741

lN2859 lN4002 lN3021A lN4741
lN2859A lN4002 lN3021B lN4741A
lN2860 lN4003 lN3022 lN4742
lN2860A lN4003 lN3022A lN4742

lN2861 lN4004 lN3022B lN4742A

lN2861A lN4004 lN3023 lN4743
lN2862 lN4004 lN3023A lN4743
lN2862A lN4004 lN3023B lN4743A
lN2863 lN4005 lN3024 lN4744

lN2863A lN4005 lN3024A lN4744

lN2864 lN4005 lN3024B lN4744A
lN2864A lN4005 lN3025 lN4745
lN287 lN4148 lN3025A lN4745
lN288 lN4148 lN3025B lN4745A

lN289 lN4148 lN3026 lN4746

lN290 lN3070 lN3026A lN4746
lN291 lN3070 lN3026B lN4746A .
lN292 lN4448 lN3027 lN4747
lN294 lN4148 lN3027A lN4747

lN294A lN4148 lN3027B lN4747A

lN295 lN4148 lN3028 lN4748
lN295A lN4148 lN3028A lN4748
lN295S lN4148 lN3028B lN4748A
lN295X lN4148 lN3029 lN4749

lN296 lN4148 lN3029A lN4749

lN297 lN4148 lN3029B lN4749A
lN297A lN4148 lN303 lN458
lN298 lN4148 lN303A lN484B
lN298A lN4148 lN303B lN484B

lN299 lN4305 lN3030 lN4750

lN300 lN482B lN3030A lN4750
lN300A lN482B lN3030B lN4750A
lN300B lN482B lN3031 lN4751
lN301 lN457 lN3031A lN4751

1-32
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EaUIVALENT DEVICE EaUIVALENT

1N3031B 1N4751A 1N3179 1N3070

1N3032 1N4752 1N318 1N4003
1N3032A 1N4752 1N318A 1N4003
1N3032B 1N4752A 1N3180 1N3070

•
1N304 1N4148 1N3181 1N5237A

1N305 1N4607 1N319 1N4004

1N306 1N4607 1N319A 1N4004
1N3062 1N4305 1N3190 1N4004
1N3063 1N4305 1N3191 1N4005
1N3064 1N3064 1N3192 1N4003

1N3065 1N4305 1N3193 1N4003

1N3066 1N4305 1N3194 1N4004
1N3067 1N4148 1N3195 1N4005
1N3068 1N4148 1N3196 1N4005
1N3069 1N4148 1N3197 1N4148

1N307 1N4938 1N320 1N4005

1N3070 1N3070 1N320A 1N4005
1N3071 1N3070 1N3203 1N4305
1N3072 1N4001 1N3204 1N4305
1N3073 1N4002 1N3206 1N4148

1N3074 1N4003 1N3215 1N4152

1N3075 1N4003 1N3223 1N3070
1N3076 1N4004 1N3225 1N4148
1N3077 1N4004 1N3227 1N4002
1N3078 1N4004 1N3228 1N4003

1N3079 1N4004 1N3229 1N4004

1N3080 1N4005 1N323 1N4001
1N3081 1N4005 1N323A 1N4001
1N3082 1N4003 1N3230 1N4005
1N3083 1N4004 1N3237 1N4001

1N3084 1N4005 1N3238 1N4002

1N309 1N4148 1N3239 1N4003
1N3097 1N4305 1N324 1N4002
1N310 1N4148 1N324A 1N4002
1N3110 1N4305 1N3240 1N4004

1N312 1N4448 1N3241 1N4005

1N3121 1N4305 1N3246 1N4001
1N3122 1N4305 1N3247 1N4002
1N3123 1N4305 1N3248 1N4003
1N3124 1N4151 1N3249 1N4004

1N3125 1N4305 1N325 1N4003

1N313 1N4148 1N325A 1N4003
1N314 1N4148 1N3250 1N4005
1N3144 1N4305 1N3253 1N4003
1N3145 1N4305 1N3254 1N4004

1N3146 1N4154 1N3255 1N4005

1N3147 1N4448 1N3257 1N4449
1N315 1N4004 1N3258 1N4448
1N315A 1N4003 1N326 1N4004
1N3159 1N4305 1N326A 1N4004

1N316 1N4001 1N327 1N4005

1N316A 1N4001 1N327A 1N4005
1N3160 1N4305 1N3277 1N4003
1N317 1N4002 1N3278 1N4004
1N317A 1N4002 1N3279 1N4005

1-33
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN3298 FDH400 lN355 lN4148

lN3298A FDH400 lN3550 lN3070
lN330 lN456 lN3559 FDH444
lN331 lN458 lN3564 lN4448
lN332 lN4004 lN3567 lN4448
lN333 lN4004 lN3568 lN4449
lN334 lN4004 lN3575 lN483B
lN335 lN4004 lN3575 lN485B
lN336 lN4003 lN3576 lN484B
lN337 lN4003 lN3578 lN4004

lN338 lN4002 lN3579 lN4004

lN339 lN4002 lN359 1N400 1
lN34 lN4454 lN359A lN4001
lN34A lN4454 lN3592 lN4305
lN34AS lN4148 lN3593 lN4148

lN340 lN4002 1N3594 FDH600

lN341 lN4004 lN3595 1N3595
lN342 lN4004 lN3596 lN4449
lN343 1N4004 1N3597 lN3070
lN344 1N4004 1N3598 lN4152

1N345 lN4003 lN3599 1N4938

lN346 lN4003 lN36 lN4148
lN3465 FDH444 lN360 lN4002
lN3466 FDH444 lN360A lN4002
lN3467 lN4446 lN3600 1N3600

lN3468 lN4446 1N3601 lN4149

lN3469 FDH400 lN3602 lN4151
lN347 lN4002 lN3603 1N4151
lN3470 FDH400 lN3604 lN4151
lN3471 lN4148 lN3605 1N4152

lN3473 lN4003 lN3606 lN4153

lN3474 lN4004 lN3607 lN4151
lN3475 lN4005 lN3608 lN4152
lN3478 lN4003 lN3609 lN4153
lN3479 1N4004 1N361 lN4003
lN348 lN4002 lN361A lN4003
lN3480 lN4005 lN362 lN4004
lN3483 1N4305 lN362A lN4004
lN3484 lN4305 1N3625 1N3070
lN3485 lN3070 1N3629 lN4002

lN349 lN4002 lN363 lN4005

lN35 lN4454 lN363A lN4005
lN350 lN457 lN3630 lN4003
lN351 lN484B lN3631 lN4004
lN352 lN485B lN3632 1N4004

1N353 lN4004 lN3633 lN4005

1N3535 lN3070 lN3634 1N4005
1N3536 lN457 1N3639 1N4003
1N354 1N4004 1N3640 1N4004
lN3544 lN4002 lN3641 lN4005

lN3545 lN4003 lN3653 FDH400

lN3546 lN4004 1N3654 lN4448
lN3547 lN4004 1N3656 lN4003
lN3548 lN4005 lN3657 lN4004
lN3549 lN4005 lN3658 lN4005

1-34
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N3666 1N4305 1N3722 1N4148

1N3668 1N4305 1N3728 1N4005
1N3675 1N4736 1N3729 1N4005
1N3675A 1N4736 1N373 1N5227A

•
1N3675B 1N4736A 1N3731 1N4153

1N3676 1N4737 1N374 1N5229A

1N3676A 1N4737 1N3748 1N4003
1N3676B 1N4737A 1N3749 1N4004
1N3677 1N4738 1N375 1N5230A
1N3677A 1N4738 1N3750 1N4005

1N3677B 1N4738A 1N3753 1N4148

1N3678 1N4739 1N3754 1N4002
1N3678A 1N4739 1N3755 1N4003
1N3678B 1N4739A 1N3756 1N4004
1N3679 1N4740 1N3757 1N4003

1N3679A 1N4740 1N3758 1N4004

1N3679B 1N4740A 1N3759 1N4005
1N368 1N4003 1N376 1N5233A
1N368A 1N4003 1N3769 1N4305
1N3680 1N4741 1N377 1N5236A

1N3680A 1N4741 1N3773 1N4305

1N3680B 1N4741A 1N3777 1N4148
1N3681 1N4742 1N378 1N5238A
1N3681A 1N4742 1N38 1N4148
1N3681B 1N4742A 1N38A 1N3070

1N3682 1N4743 1N38B 1N3070

1N3682A 1N4743 1N3821 1N4728
1N3682B 1N4743A 1N3821A 1N4728A
1N3683 1N4744 1N3822 1N4729
1N3683A 1N4744 1N3822A 1N4729A

1N3683B 1N4744A 1N3823 1N4730

1N3684 1N4745 1N3823A 1N4730A
1N3684A 1N4745 1N3824 1N4731
1N3684B 1N4745A 1N3824A 1N4731A
1N3685 1N4746 1N3825 1N4732
1N3685A 1N4746 1N3825A 1N4732A
1N3685B 1N4746A 1N3826 1N4733
1N3686 1N4747 1N3826A 1N4733A
1N3686A 1N4747 1N3827 1N4734
1N3686B 1N4747A 1N3827A 1N4734A

1N3687 1N4748 1N3828 1N4735

1N3687A 1N4748 1N3828A 1N4735A
1N3687B 1N4748A 1N3829 1N4736
1N3688 1N4749 1N3829A 1N4736A
1N3688A 1N4749 1N3830 1N4737
1N3688B 1N4749A 1N3830A 1N4737A
1N3689 1N4750 1N385 1N4148
1N3689A 1N4750 1N386 1N4148
1N3689B 1N4750A 1N3864 1N458
1N3690 1N4751 1N3865 1N4148
1N3690A 1N4751 1N3866 1N4003
1N3690B 1N4751A 1N3867 1N4004
1N3691 1N4752 1N3868 1N4005
1N3691A 1N4752 1N387 1N4148
1N3691B 1N4752A 1N3872 FDH444

1-35
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N3873 FDH444 1N4161 1N4739

1N388 1N4148 1N4161A 1N4739
1N389 1N4148 1N4161B 1N4739A
1N3894 1N4004 1N4162 1N4740
1N3895 1N4004 1N4162A 1N4740
1N39 1N3070 1N4162B 1N4740A
1N39A 1N3070 1N4163 1N4741
1N39B 1N3070 1N4163A 1N4741
1N390 1N4148 1N4163B 1N4741A
1N391 1N4148 1N4164 1N4742
1N392 1N4148 1N4164A 1N4742
1N393 1N3070 1N4164B 1N4742A
1N394 1N3070 1N4165 1N4743
1N3943 1N4001 1N4165A 1N4743
1N3944 1N4305 1N4165B 1N4743A
1N3952 1N3070 1N4166 1N4744
1N3953 1N4148 1N4166A 1N4744
1N3954 1N4150 1N4166B 1N4744A
1N3956 1N4305 1N4167 1N4745
1N3991 1N4305 1N4167A 1N4745
1N40 1N4148 1N4167B 1N4745A
1N400 1 1N4001 1N4168 1N4746
1N4002 1N4002 1N4168A 1N4746
1N4003 1N4003 1N4168B 1N4746A
1N4004 1N4004 1N4169 1N4747

1N4005 1N4005 1N4169A 1N4747

1N4006 1N4006 1N4169B 1N4747A
1N4007 1N4007 1N417 1N4448
1N4008 1N4305 1N4170 1N4748
1N4009 1N4009 1N4170A 1N4748
1N4043 1N4154 1N4170B 1N4748A
1N4086 FDH444 1N4171 1N4749
1N4087 FDH900 1N4171A 1N4749
1N4088 1N4148 1N4171B 1N4749A
1N4089 1N4004 1N4172 1N4750
1N4099-4121 1N4099-4121 1N4172A 1N4750
1N41 1N4454 1N4172B 1N4750A
1N4147 1N914 1N4173 1N4751
1N4148 1N4148 1N4173A 1N4751
1N4149 1N4149 1N4173B 1N4751A

1N4150 1N4150 1N4174 1N4752

1N4151 1N4151 1N4174A 1N4752
1N4152 1N4152 1N4174B 1N4752A
1N4153 1N4153 1N418 1N4148
1N4154 1N4154 1N419 FDH444
1N4155 1N4004 1N42 1N3070
1N4158 1N4736 1N4242 FDH900
1N4158A 1N4736 1N4243 FDH900
1N4158B 1N4736A 1N4244 1N4244
1N4159 1N4737 1N4245 1N4003

1N4159A 1N4737 1N4246 1N4004

1N4159B 1N4737A 1N43 1N4148
1N4160 1N4738 1N4305 1N4305
1N4160A 1N4738 1N4306 1N4306
1N4160B 1N4738A 1N4307 1N4307

1-36
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N4308 1N4150 1N4334B 1N4747A

1N4309 FOH400 1N4335 1N4748
1N431 1N3070 1N4335A 1N4748
1N4310 FOH400 1N4335B 1N4748A
1N4311 1N4607 1N4336 1N4749

1N4312
1N4313
1N4314
1N4315
1N4316

1N4317
1N4318
1N4319
FOH444
1N4151
1N4150
FOH400
FOH400

1N4607
FOH444
1N4151
1N4336A
1N4336B
1N4337
1N4337A
1N4337B

1N4338
1N4338A
1N4338B
1N4749
1N4749A
1N4750
1N4750
1N4750A

1N4751
1N4751
1N4751A
•
1N432 1N4148 1N4339 1N4752
1N432A 1N4446 1N4339A 1N4752

1N432B 1N4448 1N4339B 1N4752A

1N4322 1N4150 1N434 1N3070
1N4323 1N4736 1N434A 1N3070
1N4323A 1N4736 1N434B 1N3070
1N4323B 1N4736A 1N435 1N4148

1N4324 1N4737 1N4362 1N484B

1N4324A 1N4737 1N4363 1N3070
1N4324B 1N4737A 1N4373 1N4148
1N4325 1N4738 1N4375 1N4153
1N4325A 1N4738 1N4376 1N4376

1N4325B 1N4738A 1N4389 1N4148

1N4326 1N4739 1N4390 F0700
1N4326A 1N4739 1N4391 F0700
1N4326B 1N4739A 1N4392 F0700
1N4327 1N4740 1N44 1N3070

1N4327A 1N4740 1N440 1N4002

1N4327B 1N4740A 1N440B 1N4002
1N4328 1N4741 1N4400 1N4736
1N4328A 1N4741 1N4401 1N4737
1N4328B 1N4741A 1N4402 1N4738

1N4329 1N4742 1N4403 1N4739

1N4329A 1N4742 1N4404 1N4740
1N4329B 1N4742A 1N4405 1N4741
1N433 1N3070 1N4406 1N4742
1N433A 1N3070 1N4407 1N4743

1N433B 1N3070 1N4408 1N4744

1N4330 1N4743 1N4409 1N4745
1N4330A 1N4743 1N441 1N4003
1N4330B 1N4743A 1N441B 1N4003
1N4331 1N4744 1N4410 1N4746

1N4331A 1N4744 1N4411 1N4747

1N4331B 1N4744A 1N4412 lN4748
lN4332 1N4745 lN4413 lN4749
1N4332A 1N4745 1N4414 1N4750
1N4332B 1N4745A 1N4415 1N4751

1N4333 1N4746 1N4416 1N4752

1N4333A 1N4746 1N442 1N4004
1N4333B 1N4746A 1N442B 1N4004
1N4334 1N4747 1N443 1N4004
1N4334A 1N4747 1N443B 1N4004

1-37
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N444 1N4005 1N460B 1N4448

1N444B 1N4005 1N4608 FDH400
1N4442 FDH999 1N461 1N461A
1N4443 1N4148 1N461A 1N461A
1N4444 1N4148 1N4610 1N4150

1N4445 1N4151 1N462 1N462A

1N4446 1N4446 1N462A 1N462A
1N4447 1N4447 1N4620-4627 1N4620-4627
1N4448 1N4448 1N4628 1N4736A
1N4449 1N4449 1N4629 1N4737A

1N445 1N4005 1N4628 1N4736A

1N445B 1N4005 1N4629 1N4737A
1N4450 1N4450 1N463 1N463A
1N4451 1N4151 1N463A 1N463A
1N4453 1N4448 1N4630 1N4738A

1N4454 1N4454 1N4631 1N4739A

1N4455 1N4305 1N4632 1N4740A
1N4456 1N4150 1N4633 1N4741A
1N4457 1N4150 1N4634 1N4742A
1N447 1N4449 1N4635 1N4743A

1N448 1N4449 1N4636 1N4744A

1N449 1N4151 1N4637 1N4745A
1N45 1N4454 1N4638 1N4746A
1N450 1N4151 1N4639 1N4747A
1N4502 1N4305 1N464 1N463A

1N451 1N3070 1N464A 1N463A

1N452 1N4448 1N4640 1N4748A
1N4523 1N4305 1N4641 1N4749A
1N4524 1N4305 1N4642 1N4750A
1N453 1N3070 1N4643 1N4751A

1N4531 1N4148 1N4644 1N4752A

1N4532 FDH600 1N4649 1N4728A
1N4533 1N4152 1N4650 1N4729A
1N4534 1N4153 1N4651 1N4730A
1N4536 1N4154 1N4652 1N4731A

1N454 FDH444 1N4653 1N4732A

1N4541 1N4004 1N4654 1N4733A
1N4542 1N4004 1N4655 1N4734A
1N4543 1N4005 1N4656 1N4735A
1N4547 1N4151 1N4657 1N4736A

1N4548 1N4154 1N4658 1N4737A

1N456 1N456 1N4659 1N4738A
1N456A 1N456A 1N4660 1N4739A
1N457 1N457 1N4661 1N4740A
1N457A 1N457A 1N4662 1N4741A

1N457M 1N457 1N4663 1N4742A

1N458 1N458 1N4664 1N4743A
1N458A 1N458A 1N4665 1N4744A
1N458M 1N458 1N4666 1N4745A
1N459 1N459 1N4667 1N4746A

1N459A 1N459A 1N4668 1N4747A

1N459M 1N459 1N4669 1N4748A
1N46 1N4454 1N4670 1N4749A
1N460 1N4148 1N4671 1N4750A
1N460A 1N4148 1N4672 1N4751A

1-38
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN4673 lN4752A lN478 lN4148

lN47 lN3070 lN479 lN4148
lN4728 lN4728 lN48 lN4454
lN4728A lN4728A lN480 lN4148

•
lN4729 lN4729 lN482 lN482B

lN4729A lN4729A lN482A lN482B

lN4730 lN4730 lN482B lN482B
lN4730A lN4730A lN482C lN482B
lN4731 lN4731 lN4823 lN4002
lN4731A lN4731A lN4824 lN4003

lN4732 lN4732 lN4825 lN4004

lN4732A lN4732A lN4826 lN4005
lN4733 lN4733 lN4827 lN4448
lN4733A lN4733A lN4828 FDH444
lN4734 lN4734 lN4829 FDH444
lN4734A lN4734A lN483 lN483B
lN4735 lN4735 lN483A lN483B
lN4735A lN4735A lN483B lN483B
lN4736 lN4736 lN483C lN483B
lN4736A lN4736A lN4830 FDH444
lN4737 lN4737 lN484 lN484B
lN4737A lN4737A lN484A lN484B
lN4738 lN4738 lN484B lN484B
lN4738A lN4738A lN484C lN484B
lN4739 lN4739 lN485 lN485B

lN4739A lN4739A lN485A lN485B

lN4740 lN4740 lN485B lN485B
lN4740A lN4740A lN485C lN485B
lN4741 lN4741 lN486 lN486B
lN4741A lN4741A lN486A lN486B

lN4742 lN4742 lN486B lN486B

lN4742A lN4742A lN4861 lN457
lN4743 lN4743 lN4862 lN457
lN4743A lN4743A lN4863 lN4148
lN4744 lN4744 lN4864 lN4151

lN4744A lN4744A lN487 lN4004

lN4745 lN4745 lN487A lN4004
lN4745A lN4745A lN487B lN4004
lN4746 lN4746 lN488 lN4004
lN4746A lN4746A lN488A lN4004

lN4747 lN4747 lN488B lN4004

lN4747A lN4747A lN4888 FD777
lN4748 lN4748 lN49 lN4148
lN4748A lN4748A lN490 lN4148
lN4749 lN4749 lN4933 lN4933
lN4749A lN4749A lN4934 lN4934
lN4750 lN4750 lN4935 lN4935
lN4750A lN4750A lN4936 lN4936
lN4751 lN4751 lN4937 lN4937
lN4751A lN4751A lN4938 lN3070

lN4752 lN4752 lN4942 lN4935

lN4752A lN4752A lN4943 lN4936
lN476 lN4148 lN4944 lN4936
lN4765 lN4734 lN4945 lN4937
lN477 lN4148 lN4946 lN4937

1-39
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN4949 F0700 lN5227 lN5227

lN4950 lN4150 lN5227A lN5227A
lN4951 lN4607 lN5227B lN5227B
lN4952 lN4607 lN5226 lN5228
lN4953 F0700 lN5228A lN5228A
lN497 lN4448 lN5228B lN5228B
lN498 lN4448 lN5229 lN5229
lN499 lN4448 lN5229A lN5229A
lN50 lN4148 lN5229B lN5229B
lN500 lN4448 lN5230 lN5230

lN5004 lN4934 lN5230A lN5230A

lN5005 lN4935 lN5230B lN5230B
lN5006 lN4936 lN5231 lN5231
lN5007 lN4937 lN5231A lN5231A
lN501 lN4448 lN5231B lN5231B
lN502 lN3070 lN5232 lN5232
lN503 lN4001 lN5232A lN5232A
lN504 lN4002 lN5232B lN5232B
lN505 lN4003 lN5233 lN5233
lN5055 lN4934 lN5233A lN5233A

lN5056 lN4935 lN5233B lN5233B

lN5057 lN4936 lN5234 lN5234
lN5058 lN4936 lN5234A lN5234A
lN5059 lN4003 lN5234B lN5234B
lN506 lN4004 lN5235 lN5235
lN5060 lN4004 lN5235A lN5235A
lN5061 lN4005 lN5235B lN5235B
lN507 lN4004 lN5236 lN5236
lN508 lN4005 lN5236A lN5236A
lN51 lN4454 lN5238B lN5236B
lN511 1N400 1 lN5237 lN5237
lN512 lN4002 lN5237A lN5237A
lN513 lN4003 lN5237B lN5237B
lN514 lN4004 lN5238 lN5238
lN515 lN4004 lN5238A lN5238A

lN518 lN4005 lN5238B lN5238B

lN5194 lN483B lN5239 lN5239
lN5195 lN485B lN5239A lN5239A
lN5196 lN486B lN5239B lN5239B
lN52 lN4454 lN5240 lN5240
lN52A lN4454 lN5240A lN5240A
lN520B lN457 lN5240B lN5240B
lN5209 lN458 lN5241 lN5241
lN5210 lN459 lN5241A lN5241A
lN5211 lN4003 lN5241B lN5241B
lN5212 lN4004 lN5242 lN5242
lN5213 lN4005 lN5242A lN5242A
lN5215 lN4003 lN5242B lN5242B
lN5216 lN4004 lN5243 lN5243
lN5217 lN4005 lN5243A lN5243A
lN5219 FOH900 lN5243B lN5234B
lN5220 FOH900 lN5244 lN5244
lN5226 lN5226 lN5244A lN5244A
lN5226A lN5226A lN5244B lN5244B
lN5226B lN5226B lN5245 lN5245

1-40
 INDUSTRY I FAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N5245A 1N5245A 1N539 1N4004

1N5245B 1N5245B 1N54 1N4148
1N5246 1N5246 1N54A 1N4148
1N5246A 1N5246A 1N540 1N4004

•
1N5246B 1N5246B 1N541 1N4305
1N5247 1N5247 1N5412 1N4305
1N5247A 1N5247A 1N5413 1N4305
1N5247B 1N5247B 1N5414 1N4305
1N5248 1N5248 1N542 1N4305
1N5248A 1N5248A 1N5427 1N4148
1N5248B 1N5248B 1N5428 1N3070
1N5249 1N5249 1N5429 1N485
1N5249A 1N5249A 1N5430 1N4150
1N5249B 1N5249B 1N5431 FDH400
1N5250 1N5250 1N5432 FD777
1N5250A 1N5250A 1N547 1N4005
1N5250B 1N5250B 1N55 1N3070
1N5251 1N5251 1N55A 1N3070
1N5251A 1N5251A 1N55B 1N3070
1N5251B 1N5251B 1N550 1N4002
1N5252 1N5252 1N551 1N4003
1N5252A 1N5252A 1N552 1N4004
1N5252B 1N5252B 1N553 1N4004
1N5253 1N5253 1N554 1N4005
1N5253A 1N5253A 1N555 1N4005
1N5253B 1N5253B 1N5559 1N4736
1N5254 1N5254 1N5559A 1N4736
1N5254A 1N5254A 1N5559B 1N4736A
1N5254B 1N5254B 1N5560 1N4737
1N5255 1N5255 1N5660A 1N4737
1N5255A 1N5255A 1N5560B 1N4737A
1N5255B 1N5255B 1N5561 1N4738
1N5256 1N5256 1N5561A 1N4738
1N5256A 1N5256A 1N5561B 1N4738A
1N5256B 1N5256B 1N5562 1N4739
1N5257 1N5257 1N5562A 1N4739
1N5257A 1N5257A 1N5562B 1N4739A
1N5257B 1N5257B 1N5563 1N4740
1N527 1N4305 1N5563A 1N4740
1N5282 1N5282 1N5563B 1N4740A
1N530 1N4002 1N5564 1N4741
1N531 1N4003 1N5564A 1N4741
1N5315 1N4153 1N5564B 1N4741A
1N5316 1N4153 1N5565 1N4742
1N5317 1N4150 1N5565A 1N4742
1N5318 1N4150 1N5565B 1N4742A
1N5319 1N4305 1N5566 1N4743
1N532 1N4004 1N5566A 1N4743
1N5320 1N4934 1N5566B 1N4743A
1N533 1N4004 1N5567 1N4744
1N534 1N4005 1N5567A 1N4744
1N535 1N4005 1N5567B 1N4744A
1N536 1N400 1 1N5568 1N4745
1N537 1N4002 1N5568A 1N4745
1N538 1N4003 1N5568B 1N4745A

1-41
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N5569 1N4746 1N5770 1N5770

1N5569A 1N4746 1N5771 FSA2003M
1N5569B 1N4746A 1N5772 1N5772
1N5570 1N4747 1N5773 FSA2500M
1N5570A 1N4747 1N5774 1N5774

1N5570B 1N4747A 1N5775 FSA2504M

1N5571 1N4748 1N58 1N3070
1N5571A 1N4748 1N58A 1N3070
1N5571B 1N4748A 1N584 1N4004
1N5572 1N4749 1N59 1N4003

1N5572A 1N4749 1N5913 1N4728

1N5572B 1N4749A 1N5913A 1N4728
1N5573 1N4750 1N5913B 1N4728A
1N5573A 1N4750 1N5914 1N4729
1N5573B 1N4750A 1N5914A 1N4729

1N5574 1N4751 1N5914B 1N4729A

1N5574A 1N4751 1N5915 1N4730
1N5574B 1N4751A 1N5915A 1N4730
1N5575 1N4752 1N5915B 1N4730A
1N5575A 1N4752 1N5916 1N4731

lN5575B 1N4752A 1N5916A 1N4731

1N56 1N4148 1N5916B 1N4731A
1N56A 1N4148 1N5917 1N4732
1N5605 1N457 1N5917A 1N4732
1N5606 1N458 1N5917B 1N4732A

1N5607 1N3070 1N5918 1N4733

1N5608 1N3070 1N5918A 1N4733
1N5609 1N3070 1N5918B 1N4733A
1N5614 1N4003 1N5919 1N4734
1N5615 1N4935 1N5919A 1N4734

1N5616 1N4004 1N5919B 1N4734A

1N5617 1N4936 1N5920 1N4735
1N5618 1N4005 1N5920A 1N4735
1N5619 1N4937 1N5920B 1N4735A
1N566 1N3070 1N5921 1N4736

1N567 1N3070 1N5921A 1N4736

1N5679 1N4001 1N5921B 1N4736A
1N568 1N4305 1N5922 1N4737
1N5680 1N4002 1N5922A 1N4737
lN569 1N4305 1N5922B 1N4737A

1N57 1N4454 1N5923 1N4738

1N57A 1N4454 1N5923A 1N4738
1N571 FDH444 1N5923B 1N4738A
1N5711 1N4446 1N5924 1N4739
1N5712 1N4446 1N5924A 1N4739

1N5713 1N4446 1N5924B 1N4739A

1N5719 1N484 1N5925 1N4740
1N5720 1N4448 1N5925A 1N4740
1N5721 1N4448 1N5925B 1N4740A
1N5726 FDH400 1N5926 1N4741

1N5727 FDH400 1N5926A lN4741

1N5748B 1N5748B 1N5926B 1N4741A
1N5767 1N4448 1N5927 1N4742
1N5768 1N5768 1N5927A 1N4742
1N5769 FSA2002M 1N5927B 1N4742A

1-42
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN5928 lN4743 lN5995A lN5234A

lN5928A lN4743 lN5995B lN5234B
lN5928B lN4743A lN5996 lN5235
lN5929 lN4744 lN5996A lN5235A

•
lN5929A lN4744 lN5996B lN5235B

lN5929B lN4744A lN5997 lN5236

lN5930 lN4745 lN5997A lN5236A
lN5930A lN4745 lN5997B lN5236B
lN5930B lN4745A lN5998 lN5237
lN5931 lN4746 lN5998A lN5237A

lN5931A lN4746 lN5998B lN5237B

lN5931B lN4746A lN5999 lN5239
lN5932 lN4747 lN5999A lN5239A
lN5932A lN4747 lN5999B lN5239B
lN5932B lN4747A lN60 lN4148

lN5933 lN4748 lN60A lN4148

lN5933A lN4748 lN60C lN4148
lN5933B lN4748A lN60S lN4148
lN5934 lN4749 lN600 lN4002
lN5934A lN4749 lN600A lN4002

lN5934B lN4749A lN6000 lN5240

lN5935 lN4750 lN6000A lN5240A
lN5935A lN4750 lN6000B lN5240B
lN5935B lN4750A lN6001 lN5241
lN5936 lN4751 lN6001A lN5241A

lN5936A lN4751 lN6001B lN5241B

lN5936B lN4751A lN6002 lN5242
lN5937 lN4752 lN6002A lN5242A
lN5937A lN4752 lN6002B lN5242B
lN5937B lN4752A lN6003 lN5243

lN596 lN4005 lN6003A lN5243A

lN5988 lN5226 lN6003B lN5243B
lN5988A lN5226A lN6004 lN5245
lN5988B lN5226B lN6004A lN5245A
lN5989 lN5227 lN6004B lN5245B

lN5989A lN5227A lN6005 lN5246

lN5989B lN5227B lN6005A lN5246A
lN599 lN4001 lN6005B lN5246B
lN599A lN4001 lN6006 lN5248
lN5990 lN5228 lN6006A lN5248A

lN5990A lN5228A lN6006B lN5248B

lN5990B lN5228B lN6007 lN5250
lN5991 lN5229 lN6007A lN5250A
lN5991A lN5229A lN6007B lN5250B
lN5991B lN5229B lN6008 lN5251

lN5992 lN5230 lN6008A lN5251A

lN5992A lN5230A lN6008B lN5251B
lN5992B lN5230B lN6009 lN5252
lN5993 lN5231 lN6009A lN5252A
lN5993A lN5231A 1N6009B lN5252B

lN5993B lN5231B lN601 lN4003

lN5994 lN5232 lN601A lN4003
lN5994A lN5232A lN6010 lN5254
lN5994B lN5232B lN6010A lN5254A
lN5995 lN5234 lN6010B lN5254B

1-43
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N6011 1N5256 1N63 1N4148

1N6011A 1N5256A 1N63A 1N4148
1N6011B 1N5256B 1N631 1N4148
1N6012 1N5257 1N632 1N4148
1N6012A 1N5257A 1N633 1N3070

1N6012B 1N5257B 1N634 1N3070

1N602 1N4003 1N635 1N3070
1N602A 1N4003 1N636 1N4448
1N603 1N4004 1N64 1N4148
1N603A 1N4004 1N64A 1N4148

1N604 1N4004 1N643 1N4003

1N604A 1N4004 1N643A 1N4003
1N605 1N4005 1N643M 1N4003
1N605A 1N4005 1N645 1N4004
1N606 1N4005 1N645A 1N4004

1N606A 1N4005 1N645B 1N4004

1N607 1N4001 1N645J 1N4004
1N607A 1N4001 1N646 1N4004
1N608 1N4002 1N647 1N4005
1N608A 1N4002 lN648 1N4005

1N609 1N4003 1N65 1N4454

1N609A 1N4003 1N658 1N658
1N6099 1N6099 1N658A 1N658
1N61 1N3070 1N659 1N659
1N610 1N4003 1N659A 1N659

1N610A 1N4003 1N66 1N4454

1N6100 1N6100 1N66A 1N4454
1N6101 1N6101 lN660 1N660
1N611 1N4004 1N660A 1N660
1N611A lN4004 1N661 1N661

1N612 lN4004 lN661A 1N661

1N612A 1N4004 lN664 1N5237A
1N613 1N4005 1N665 1N5242A
1N613A 1N4005 1N666 lN5245B
1N614 1N4005 1N667 1N5248A

1N614A 1N4005 1N668 1N5251A

1N615 1N4004 1N669 1N5254A
1N616 1N4148 lN67 1N4148
lN617 1N4148 1N67A 1N4148
1N618 1N4148 lN673 1N4004

1N619 1N4148 1N676 1N4002

lN62 1N3070 1N677 1N4002
1N622 lN4938 lN678 lN4003
1N625 1N625 1N679 lN4003
1N625A lN4148 1N68 lN3070

1N625M 1N625 1N68A lN3070

1N626 lN626 1N681 lN4004
1N626A 1N4148 1N682 1N4004
1N626M 1N626 1N683 1N4004
1N627 1N627 1N684 1N4004

1N627A 1N3070 1N685 1N4005

1N628 1N628 1N686 1N4005
1N628A 1N3070 lN687 1N4005
1N629 1N629 lN689 1N4005
1N629A 1N3070 1N69 1N4454

1-44
 INDUSTRY I FAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN69A lN4454 lN725 lN5256A

lN695 lN4146 lN725A lN5256B
lN695A lN4148 lN726 lN5257A
lN696 lN4148 lN726A lN5257B

•
lN698 lN4305 lN74 lN4148
lN699 lN4448 lN746 lN746
lN70 lN3070 lN746A lN746A
lN70A lN4148 lN747 lN747
lN702 lN5223A lN747A lN747A
lN702A lN5223B lN748 lN748
lN703 lN5227A lN748A lN748A
lN703A lN5227B lN749 lN749
lN704 lN5229A lN749A lN749A
lN704A lN5229B lN75 lN3070
lN705 lN5230A lN750 lN750
lN705A lN5230B lN750A lN750A
lN706 lN5232A lN751 lN751
lN706A lN5232B lN751A lN751A
lN707 lN5236A lN752 lN752
lN707A lN5236B lN752A lN752A
lN708 lN5232A lN753 lN753
lN708A lN5232B lN753A lN753A
lN709 lN5234A lN754 lN754
lN709A lN5234B lN754A lN754A
lN71 FDH900 lN755 lN755
lN710 lN5235A lN755A lN755A
lN710A lN5235B lN756 lN756
lN711 lN5236A lN756A lN756A
lN711A lN5236B lN757 lN757
lN712 lN5237A lN757A lN757A
lN712A lN5237B lN758 lN758
lN713 lN5239A lN758A lN758A
lN713A lN5239B lN759 lN759
lN714 lN5240A lN759A lN759A
lN714A lN5240B lN761 lN5230A
lN715 lN5241A lN762 lN5232B
lN715A lN5241B lN763 lN5238B
lN716 lN5242A. lN764 lN5238A
lN716A lN5242B lN765 lN5240A
lN717 lN5243A lN766 lN5243A
lN717A lN5243B lN767 lN5246A
lN718 lN5245A lN768 lN5249A
lN718A lN5245B lN769 lN5252A
lN719 lN5246A lN770 lN4305
lN719A lN5246B lN771 lN4448
lN720 lN5248A lN771A FDH444
lN720A lN5248B lN771B lN4002
lN721 lN5250A lN772 lN4448
lN721A lN5250B lN772A FDH444
lN722 lN5251A lN773 lN4448
lN722A lN5251B lN773A FHD444
lN723 lN5252A lN774 lN4448
lN723A lN5252B lN774A FDH444
lN724 lN5254A lN775 lN4448
lN724A lN5254B lN776 lN4448

1-45
 INDUSTRYIFAIRCHILDCROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N777 1N4448 1N840 FDH444

1N778 1N4148 1N840M 1N3070
1N779 1N3070 1N841 1N3070
1N781 1N4305 1N842 1N3070
1N781A 1N4305 1N843 1N3070
1N788 1N4448 1N844 1N3070
1N789 1N4148 1N845 1N3070
1N789M 1N4148 1N846 1N4001
1N790 1N4148 1N847 1N4002
1N790M 1N4148 1N848 1N4003
1N791 1N4448 1N849 1N4004
1N791M 1N4448 1N850 1N4004
1N792 1N4448 1N851 1N4005
1N792M 1N4448 1N852 1N4005
1N793 1N4148 1N857 1N4001
1N793M 1N4148 1N858 1N4002
1N794 1N4f48 1N859 1N4003
1N795 1N4448 1N86 1N4148
1N796 1N4448 1N860 1N4004
1N797 1N3070 1N861 1N4004
1N798 1N3070 1N862 1N4005
1N799 1N3070 1N863 1N4005
1N800 1N3070 1N868 1N400 1
1N801 1N3070 1N869 1N4002
1N802 1N3070 1N87 1N4148
1N803 1N3070 1N87A 1N4148
1N804 1N3070 1N87S 1N4148
1N805 1N4148 1N87T 1N4148
1N806 1N4148 1N870 1N4003
1N807 1N3070 1N871 1N4004
1N808 1N4448 1N872 1N4004
1N809 1N3070 1N873 1N4005
1N81 1N4148 1N874 1N4005
1N81A 1N4148 1N879 1N4001
1N810 1N4148 1N88 1N3070
1N811 1N4148 1N880 1N4002
1N811M 1N4148 1N881 1N4003
1N812 1N4149 1N882 1N4004
1N812M 1N4149 1N883 1N4004
1N813 1N4146 1N884 1N4005

1N813M 1N4148 1N885 1N4005

1N814 1N4148 1N89 1N4454
1N814M 1N4148 1N890 1N4447
1N815 1N4448 1N891 1N4448
1N815M 1N4448 1N892 1N4448
1N817 1N3070 1N893 1N3070
1N818 1N4148 1N897 1N4148
1N819 1N4002 1N898 1N4448
1N83 1N4003 1N899 1N3070
1N835 1N4305 1N90 1N4454
1N837 FDH444 1N900 1N3070
1N837A FDH444 1N901 1N3070
1N838 1N3070 1N902 1N3070
1N839 1N3070 1N903 1N4148
1N84 1N4148 1N903A 1N4154

1-46
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

lN903AM lN4154 lN948 lN4448

lN903M lN4154 lN949 lN4305
lN904 lN4154 lN95 lN4148
lN904A lN4154 lN957 lN957

•
lN904AM lN4154 lN957A lN957A

lN904M lN4154 lN957B lN957B

lN905 lN4151 lN958 lN958
lN905A lN4154 lN958A lN958A
lN905AM lN4154 lN958B lN958B
lN905M lN4154 lN959 lN959

lN906 lN4149 lN959A lN959A

lN906A lN4447 lN959B lN959B
lN906AM lN4447 lN96 lN4447
lN906M lN4447 lN96A lN4148
lN907 lN4149 lN960 lN960

lN907A lN4448 lN960A lN960A

lN907AM lN4447 lN960B lN960B
lN907M lN4149 lN961 lN961
lN908 lN4149 lN961A lN961A
lN908A lN4447 lN961B lN961B

lN908AM lN4447 lN962 lN962

lN908M lN4149 lN962A lN962A
lN909 1N4449 lN962B lN962B
lN91 lN4002 lN963 lN963
lN910 lN4449 lN963A lN963A

lN911 lN4449 lN963B lN963B

lN914 lN914 lN964 lN964
lN914A lN914A lN964A lN964A
lN914B lN914B lN964B lN964B
lN914M lN914 lN965 lN965

lN915 lN914B lN965A lN965A

lN916 lN916 lN965B lN965B
lN916A lN916A lN966 lN966
lN916B lN916B lN966A lN966A
lN917 lN914 lN966B lN966B

lN919 lN3070 lN967 lN967

lN92 lN4003 lN967A lN967A
lN920 FDH400 lN967B lN967B
lN921 FDH400 lN968 lN968
lN922 FDH400 lN968A lN968A

lN923 FDH400 lN968B lN968B

lN924 lN483 lN969 lN969
lN925 lN4148 lN969A lN969A
lN926 lN4148 lN969B lN969B
lN927 lN4148 lN97 lN4148

lN928 lN3070 lN97A lN4447

lN929 lN4446 lN970 lN970
lN93 lN4004 lN970A lN970A
lN930 lN4446 lN970B lN970B
lN931 lN3070 lN971 lN971

lN932 lN3070 lN971A lN971A

lN933 lN3070 lN971B lN971B
lN934 lN3070 lN972 lN972
lN94 lN4004 lN972A lN972A
lN947 lN4005 lN972B lN972B

1-47
 INDUSTRY IFAIRCHILD CROSS REFERENCE

INDUSTRY NEAREST FAIRCHILD INDUSTRY NEAREST FAIRCHILD

DEVICE EQUIVALENT DEVICE EQUIVALENT

1N973 1N973 1N997 1N4148

1N973A 1N973A 1N998 1N484B
1N973B 1N973B 1N999 1N914
1N98 1N4454 1844 1844
1N98A 1N4448 18920 18920
1N99 1N4148 18921 18921
1N99A 1N4454 18922 18922
1N993 1N4447 18923 18923
1N994 1N4151
1N995 1N4305

1-48
 Reliability

INTRODUCTION
Device reliability is becoming increasingly important as systems are made bigger and more complex than ever before.
Unfortunately, as systems grow, so does the cost of device failures. The failure of a single component can easily cause
thousands of times its value in downtime and repair costs. For a company to receive and use even one unreliable lot of
components usually results in large financial losses and an undesirable reputation.

The demands for consistently good reliability in high-volume, low-cost products is increasing. Since low cost precludes the
use of special screening or preconditioning, this increase must be obtained through design and process improvements and
more secure controls.

Fairchild has installed major systems to insure consistently good reliability. I

The manufacture of semiconductor devices involves a series of complex processing steps requiring the use of state-of-the-
art fabrication techniques and carefully selected controls to insure consistent product reliability. These techniques include
diffusion, which requires high temperatures and controlled doping levels; oxidation, which requires the same high tempera-
tures; passivation deposition, which requires precise flow rates and temperatures; metallization, which requires vacuum
evaporation and electroplating; and die separation, which requires the careful use of either saw or laser scribing. All of
these processes require a system of controls to maintain reproducibility, which is the key to device reliability.

DESIGNED-IN RELIABILITY
Because of the complex processing involved in the manufacture of semiconductors, two basic ingredients are required to
consistently generate a reliable product. First, the device must be designed with the latest technology, which enhances
reliability, making use of the best available geometric design, state-of-the-art passivation and metallization systems and
proven packaging techniques and materials. Then reliability must be built into the device with carefully controlled manufac-
turing practices utilizing the most up-to-date processing techniques and highly trained personnel. Both are essential be-
cause neither will assure reliability alone. A properly designed device will be reliable if it is manufactured as designed.

The reliability of some semiconductor devices can sometimes be impaired greatly by only slight variations in processing,
materials or techniques. These variations can, for example, be in water or chemical purity, the temperature or humidity in
the fabrication or assembly area, the impurity content of piece parts, or variation in an operator's training or frame of mind.
It is Fairchild's belief that small processing variations like these should have little influence on the device's reliability. To
this end we continue to develop new design innovations where small processing variations will have no effect on the high
reliability that was designed-in.
Silicon Nitride
In 1968 silicon nitride was introduced on Fairchild diodes as an additional passivation. Since then, over 650 million
device hours of testing have proven it to be more than three times as reliable than thermally grown silicon dioxide.
This is because silicon nitride is an almost inpenetrable barrier to the abundant alkali earth elements, especially
sodium. The presence of these mobile positive ions in a passivation layer will cause high surface fields which can
lead to a device degradation or complete failure.
This improvement in life test performance is attributed to the density of silicon nitride which prevents the migration
of mobile ion contaminants under the influence of a reverse bias. A thin layer of the nitride is deposited over a
thermally grown silicon dioxide layer, and in turn, is covered by a layer of deposited oxide. The nitride is dense
enough to block the migration of such contaminants as lithium, sodium and potassium, which are the major causes
of long-term failures, affecting junction leakage, mobility, and breakdown voltage, leading to device degradation.
Thermally grown silicon dioxide, which is still the industry standard surface passivation, is highly susceptible to
infiltration of these elements. If, however, the oxide is covered with silicon nitride early in the fabrication process, it
will be protected through the subsequent operations--even the high temperature 00-35 sealing process.

Channel Stop
In the event that an inversion layer should be formed in the area not protected by nitride, the diffused channel stop
prevents any corresponding current flow. Because it is of a higher concentration, its surface will not allow inversion
layer formation. This provides for long-term stability of the diode's reverse electrical characteristics.
2-3
 Deposited Oxide
The deposited oxide layer provides scratch protection during final fabrication and increases the thickness of the
dielectric passivation on the surface of the chip. This increase in thickness reduces the electric field strength
through the passivation, eliminating dielectric breakdown and arc-over under reverse bias. Other added benefits
include a reduction in the driving force for ion migration and a reduction of parasitic capacitance.

Epitaxial Construction
Epitaxial construction allows the device to· be manufactured with more uniform reverse breakdown and forward
voltage drop characteristics. This results in reproducible electrical characteristics with higher forward current
capability and lower power loss. In particular, the breakdown characteristic is improved by utilizing a combination
of avalanche and reach-through breakdowns. The junction is diffused far enough into the chip to provide the neces-
sary avalanche breakdown which is dependent on the junction characteristics, while the depletion region is "reach-
ing through the higher resistivity epitaxy to the lower resistivity base" under reverse voltage application. Therefore,
if the junction is diffused so that avalanche breakdown takes place just after reach-through is achieved, sharp
knees and low leakage near breakdown are observed.

Metallization
Fairchild has chosen a particular combination of metals to provide protection against undesirable intermigration,
provide high conductivity, and to provide a dynamic range for temperature cycling.

Metallurgical Bond
Fairchild.'s Diode Division has developed an improved die in the now widely accepted D0-35 package and has now
over four years of successful production experience with the new diode.
The improvements allow the die to dissipate more power, withstand higher pulse amplitudes and to have superior
mechanical characteristics when compared to the conventional switching diodes.
Additional benefits of the metallurgically bonded diode are lower failure rates due to open or intermittent circuit that
might be caused by lead insertion, or operation over a wide range of environmental temperatures.
The Fairchild Diode Reliability Engineering Department has monitored the reliability of this product on environmental
and life test for over four years. It has consistently obtained reliability results that represent more than a five-fold
improvement over conventional diodes.

RELIABILITY CONTROL
Although design functions can increase the inherent reliability of semiconductors, there is no doubt that the extent of
process variation must be defined and controlled in order to insure that the design functions are effective. In order to
achieve this control, and to insure reproducibility in production, Fairchild has instituted a system of controls designed to
monitor process variance and reliability.
Visual Inspection
The first and oldest reliability monitor is a series of visual inspections incorporated after critical processing steps.
The inspection station is under the joint jurisdiction of the Reliability and Quality Assurance groups, in order to keep
close control over visual quality, which is related to reliability. All material intended for shipmentto the customer
must pass visual inspection gates included in the process flow. The acceptance criteria are defined in standardized
reliability specifications so each and every run is inspected in the same way. The standardized inspections keep
the process variation in control, thus producing reliable finished devices.
Visual inspections are incorporated throughout the manufacturing process from receiving inspection to wafer and
die fabrication, through sealing, and as part of the final Quality Assurance inspection as standard practice. Up to
eighteen inspections are performed between receiving inspection and finished device shipment.

Process and Procedure Monitors

The second part of the control program is a set of process and procedure monitors which are direct measures of
process and procedure variation. As a procedural control, a process auditor reviews each operation at least once
every six months. This is achieved by watching the operation and matching all steps to the current revision of the
process specification which is kept on file in the reliability area.
Immediately upon completion of the audit, a summary is distributed to the area supervisor and the responsible
process and reliability engineers and department heads. Corrective action and re-audit is then performed, on any
variation found.
2-4
Process monitors have been instituted at key points in the fabrication flow to give a quantitative basis for process
control. These include a visual inspection and measurement of scribe width, depth and orientation immediately after
wafer scribe to correlate scribing to break-up quality, thickness and density measurements of deposited passiva-
tion layers including nitride and oxide; a cross-check of metal thickness and content; and measurement of C IV at all
oxidation furnaces.

Electrical Classification Monitor

The third control is an electrical monitor. A sample of each and every lot of dice is assembled under controlled
conditions and is then classified electrically for all D.C. parameters. The results of the electrical classification are
compared to established accept/reject criteria.
This electrical inspection is as important as the previously mentioned visual inspection gates. Substandard lots are

•
not allowed to be shipped to customers. Lots that perform better than norm are reviewed and analysed. The results
are fed back to Engineering for their product improvement programs.
On a periodic basis, the electric.al classification accept / reject criteria are upgraded to take into effect product
improvements and reliability.

Reliability Assurance Monitor (RAM)

Although proper design and process monitors provide the basis for the manufacture of reliable semiconductor
devices, the true measure of performance is in use. At Fairchild, an extensive life test program provides direct
feedback to the production line for the purposes of defining the limits of process variance and design change.
The Reliability Assurance Monitor (RAM) was instituted in 1972 as a program designed to life test samples of each
and every lot of die intended for shipment to the customer. This program generates reliability information on all
diode types, as well as historical information which is useful in evaluating the effects of design changes and pro-
cess optimization. All tests are performed at an accelerated rate so that the failure rates on test are much higher
than those experienced in the field. In addition to being a monitor, the RAM program is used as a ~top point for die
lots which fail according to established accept/reject criteria.
The following is a summary of life tests currently performed on RAM. Included are the purposes, description, and
defect modes disclosed on each test.

High Temperature Reverse Bias (HTRB)

HTRB testing is performed on all devices requiring reverse bias capabilities in use, or those devices on which the
passivation quality is of importance. The on-test voltage ranges from 2V to 150Vat 150°C. The expected mode of
failure is channeling or polarized surface contamination which are recoverable with baking or cleaning.

Alternating Current Operating Life (ACOL)

ACOL testing is performed on all products intended for use in both the forward and reverse modes. This includes
switching diodes and consumer devices used in protection circuits. ACOL is the most accurate measure of reliabil-
ity in the field for these devices since it tests reverse voltage blocking capabilities under power. The forward
current ranges from 50mA to 200mA while the reverse voltage ranges from 10V to 150V being switched between
these extremes at 60Hz. ACOL failures are similar to those found in the field and include contact failures (leading to
high voltage drops) and chip integrity failures (which are formed with heat and reverse bias). These failures are
usually not recoverable.

Direct Current Operating Life (DCOL)

DCOL testing is performed on all devices as a check for contact abnormalities or to monitor the chip-package
combination power rating. DeOL is intended for devices which will see forward current application and for those
alloy-type devices where contact is critical. The failures generated include chip integrity (coeffiCient of expansion
matching) and some surface-generated failures, as in HTRB. Failures may be recoverable, depending on which
mode is observed. Zener diodes are operated over the breakdown knee at the specified power rating whereas all
other devices are tested in the forward mode. Test currents range from 50mA to 400mA for all non-zener type
devices.

Temperature Cycling and Thermal Shock (TcTs)

TcTs are tests performed on all devices and are designed to examine package/chip integrity and to confirm the
validity of failures on other tests. Basically these tests are intended to evaluate materials' integrity. Usually the
failures result in fractured dice, so recovery is not normally possible.
2-5
 Zener Operating Life (ZOPL)
On zener operating life, zener devices are operate~ with constant reverse bias at maximum rated power. This is a
test of the power and voltage handling capabilities of· the device·and is the only life test commonly run on zeners.

Qualification Program
Special Test and Internal Qualification testing is a program designed to test prototype devices under design or
process change, or to internally qualify new products. Tests performed depend on the type of device being tested,
but most often RAM life testing conditions are used and some military type environmental tests are included. The
RAM criteria are used for history matching and control units are placed on test alongside test units as an added
check to test validity. Several production runs are included to provide a reasonable cross-section of device charac-
teristics. Once the testing has been satisfactorily completed, the data is reviewed by Reliability and Engineering.
Upon approval of the design by both Fairchild and the customer, the production line is then fully converted to
incorporate the product or process change.
With this level of device testing and characterization, the incorporation of new processes, designs and products
can be fully evaluated prior to marketing. It is essential to fully evaluate changes in this way in order to insure that
reliability does not suffer. New limits of process variation can be defined and a history of device behavior can be
obtained before line changeover so that any reliability problems are well known before the product is shipped to the
customer.

Failure Analyses
Fairchild's Diode Division has a complete analysis laboratory with state-of-the-art equipment and the lab is staffed
by fulltime specialists and engineering support technicians. In addition, ready support from the corporate R&D
facility is available for in-depth studies using SEM, multiple beam interferometry and Auger analysis.
It is the policy of Fairchild to perform failure analysis of defective product and utilize the findings resulting from
these analyses to improve product integrity and reliability.

Reliability Engineering Feedback

The data from all of these monitors, programs and inspections are reduced and plotted on control charts which are
posted in the appropriate areas. In this way data can be provided to the Engineering Department as an aid in
correcting any process variations, should they occur.

This combination of Reliability examinations provides a continuing check on how critical processes are functioning and on
how these functions are being accomplished. It allows not only the operations, but also the operators to be controlled.

RELIABILITY DATA
In this section is presented the data which has been generated as a result of Fairchild's continuing reliability testing
programs. This data is a summation of the results of testing performed since 1971. The devices used had no special
screening or preconditioning and were selected from the middle of each respective electrical distribution. All test methods
of standard diodes were to MIL-STD-750.

For each product family, Operating Life test data and High Temperature Reverse Bias (HTRB) test data has been plotted
and extrapolation is tangential from the last data point in each case. This gives the "worst-case" conditions provided no
new failure modes or mechanisms are generated within that time period. Given the design of the devices, the results of a
small number of 10,000 hour life tests, and the possible failure mechanisms, the probability of the generation of a new
failure mode within 100,000 hours is very small. On the 10,000 hour tests conducted (which are too few in number to
provide a statistically significant sample) no new failure modes were found and the failure rates were lower 'at ·10,000
hours than would have been predicted from the extrapolated data.

These graphs, when used as described later (see "In-Use Reliability·) should provide the information necessary to predict
the reliability of the various Fairchild diode products in a system application.

2-6
 PRODUCT FAMILY - FDH4

The FDH4 family of diodes are general purpose switching diodes in the DO-35 package. This family includes the FDH400,
FDH444, 1N3070, 1N658, 1N663 and many others. These diodes couple fast switching speed with high forward conduc-
tance and high blocking voltages

OBSERVED
LENGTH FAILURE
TEST DESCRIPTION
OF TEST RATE
Temperature Cycling Method 1051, Cond C 10 Cycles 0.11%
Thermal Shock Method 1056, Condo A 10 Cycles 0.0%
Moisture Aesistance Method 1021 10 Days 0.0%
Shock 1,500G, T=0.5 ms, Method 2016 5 Blows 0.0%
Vibration Fatigue 20G, Method 2046 96 Hours 0.0%
Vibration Variable Frequency 20G (pk) 48 Minutes 0.0%
Method 2056
Constant Acceleration 20,OOOG (pk) 3 Minutes 0.0%
Method 2006
Lead Fatigue, 1 pound three 90° arcs 6 Seconds 0.0%
Method 2036, Condo E
Salt Atmosphere, Method 1041 24 Hours 0.0%
Surge Current, 10 = 10 mA If (surge) = 500 mA 10 Surges 0.0%
(pk) 100°C tp = 1/120 s VA = 175 V (pk)
Surge Current, IF = 100 mA IF (surge) = 500 mA (pk) fs-110 Surges 0.0%
tp = 1 s
Surge Current IF = 100 mA If (surge) = 2.0 A (pk) 10 Surges 0.0%
tp = 1 J.l.s., Method 4066
High Temperature Storage 200°C 1000 Hours 0.1%
AC Operating Life, 10 = 200 mA, VA = 150 V, 0-168 Hours 0.8%
TA = 25°C 168-1000 Hours 0.5%
High Temperature Reverse Bias, TA = 150°C 0-168 Hours 1.9%
VR = 150 V 168-1000 Hours 0.14%

FAILURE Breakdown Voltage Reverse Current Forward Voltage Capacitance

DEFINITION:
IR = 5"A VR = 150 V IF 200 rnA VR = 0 V
BV<200V IR>200 nA VF<1.0V C>5.0 pF

ACOL CUMULATIVE % DEFEcnYE VS. TIME HTRB CUMULATIVE % DEFECTIVE VS. TIME
100.0 100.0

I 10.0
ft I 10.0

ffi ~
II!
~ i
~i !
1.0 1.0

il ~
0.1 0.1
100 1K 10K (5yrs.)100K 100 1K 10K (5yra)100K
Time (hours) Time (houra)

2-7
 PRODUCT FAMILIES FD5 AND FDH5

The FD5 and FDH5 families are general purpose, low leakage diodes in the 00-7 and 00-35 packages. These families
include the 1N3595, 1N486B, 1N459, FDH300 and many others. These diodes couple very low reverse leakage current
with high forward conduction and high reverse blocking voltage.

OBSERVED
LENGTH FAILURE
TEST DESCRIPTION
OF TEST RATE
Temperature Cycling Method 1051, Condo C 10 Cycles 0.23%
Thermal Shock Method 1056 Condo A 10 Cycles 0.0%
Moisture Resistance Method 1021 10 Days 0.0%
Shock 1500G t = 0.5 ms, Method 2016 5 Blows 0.0%
Vibration Variable Frequency 20G (pk) 48 Minutes 0.0%
Method 2056
Vibration Variable Frequency Monitored 24 Minutes 0.0%
20G (pk) Vr = 100 V, Method 2057
Vibration Fatigue 20G (pk), Method 2046 96 Hours 0.0%
Constant Acceleration 20KG (pk) 3 Minutes 0.0%
Method 2006
Lead Fatigue 1 pound three 90°C arcs 6 Seconds 0.0%
Method 2036, Cond. E
Salt Atmosphere, Method 1041 24 Hours 0.07%
Surge Current 10 = 200 rnA IF (surge) = 2.0 A (pk) 10 Surges 0.0%
tp = 1/120 s
Surge Current 10 = 150 rnA IF (surge) = 500 rnA (pk) 10 Surges 0.0%
tp = 1 s, Method 4066
High Temperature Storage, 200°C 1000 Hours 0.27%
AC Operating Life; 10 = 200 rnA VR = 125 V 0-168 Hours 0.44%
TA = 25°C 168-1000 Hours 0.17%
High Temperature Reverse Bias; TA = 150°C 0-168 Hours 0.66%
VR = 125 V 168-1000 Hours 0.36%

FAILURE Breakdown Voltage Reverse Current Forward Voltaye Capacitance

DEFINITION:
IR = 5/J.A VR = 125 V IF = 200 rnA VR = OV
BV<200 V IR>2.0nA VF>1.0V C>S.O pF

ACOl CUMULATIVE % DEFECTIVE YS. TIME HTRB CUMULATIVE % DEFECTIVE VS. TIME
100.0

! 10.0
,: '

i~
1.0
r-
I ' ,
~

i r--+- '

ttl
ttt--
il~ I
0.1
10K (5 yrs) lOOK

Time (hours) Time (hours)

2-S
 PRODUCT FAMILY FDH-6 METALLURGICAL BONDED

The FDH-6 family of diodes is composed of fast switching diodes in the 00-35 package. This family includes the
JAN1N4148-1, JAN1N4454-1, FDH-600, FDH-666 and many others. These diodes couple extremely fast switching
speed and high forward conductance with a miniature package which makes them desirable also as general purpose
diodes.

OBSERVED
LENGTH FAILURE

•
TEST DESCRIPTION
OF TEST RATE
Temperature Cycling Method 1051, Condo C 10 Cycles 0.10%
Thermal Shock Method 1056, Condo A 10 Cycles 0.0%
Moisture Resistance Method 1021 10 Days 0.0%
Shock 1,500G 5 blows t =
0.5 mSec, 0.0%
Method 2016
Vibration Variable Frequency 30G (pk) 48 Minutes 0.0%
Method 2056
Constant Acceleration 20,OOOG (pk) 3 Minutes 0.0%
Method 2006
Lead Fatigue Method 2036, Condo E 6 Seconds 0.0%
Salt Atmosphere, Method 1041 24 Hours 0.0%
Surge Current IF =200 mA if (surge) 500 mA (pk) = 10 Surges 0.0%
tp = 1/120 s
Surge Current IF = 200 mA if (surge) 4.0 A (pk) = 10 Surges 0.0%
tp = 1 second
Surge Current IF = 50 mA if (surge) = 2.0 A (pk) 10 Surges 0.0%
tp = 1~s Method 4066
VF pull IF = 200 rriA, 10 Ibs. 15 Seconds 0.4%
High Temperature Storage 200°C 1000 Hours 0.09%
AC Operating Life 10 =200 mA 0-168 Hours 0.38%
VR = 50 V, TA = 25°C 168-1000 Hours 0.11 %
High Temparature Reverse Bias 0-168 Hours 0.27%
TA = 150°C, VR = 50 V 168-1000 Hours 0.10%

FAILURE Breakdown Voltage ReverBe Current Forward Voltage Capacitance

DEFINITION:
IR = 5"A VR=50V IF = 200 mA =
VR OV
BV>75 V IR<200 nA VF<1.0 V C>2.0 pF

ACOL CUMULATIVE % DEFECTIVE VS. TIME HTRB CUMtl..ATIVE % DEFECTIVE VS. TIME

~,
m 10.0 i~ 10.0

I
~
~

I
1.0 1.0

~
~ 8

TIme (hours) TIme (hours)

2-9
 PRODUCT FAMILY FDH-9 AND FDH-11

The FDH-9/ 11 family are fast switching and general purpose diodes similar to the FDH-6 family except for a slightly lower
forward conductance. The FDH-9/ 11 are assembled in the smaller 00-35 package. This family includes the 1N4148,
1N4153, FDH900 and others. These diodes couple extremely fast switching speed with a selective forward conductance.

OBSERVED
LENGTH FAILURE
TEST DESCRIPTION
OF TEST RATE
Temperature Cycling Method 1051, Cond. C 10 Cycles 0.3%
Thermal Shock Method 1056, Condo A 10 Cycles 0.0%
Moisture Resistance Method 1021 10 Days 0.0%
Shock 1,500G, 5 blows t =
0.5 ms, Method 2016 0.0%
Vibration Variable Frequency 20G (pk) 48 Minutes 0.0%
Method 2056
Constant Acceleration 20,OOOG (pk) 3 Minutes 0.0%
Method 2006
Lead Fatigue Method 2036, Condo E 6 Seconds 0.0%
Salt Atmosphere, Method 1041 24 Hours 0.0%
Surge Current IF = 50 rnA if (surge) = 500 rnA (pk) 10 Surges 0.0%
tp-1 / 120 s
Surge Current IF = 50 rnA if (surge) = 500 rnA (pk) 10 Surges 0.0%
tp = 1 s
Surge Current IF = 50 rnA if (surge) = 2.0 A (pk) 10 Surges 0.0%
tp = 1 j.tS Method 4066
VF pull IF = 100 rnA, 10 Ibs. 15 Seconds 0.2%
High Temperature Storage 200°C 1000 Hours 0.0%
AC Operating Life 10 = 200 rnA, VR = 50 V, TA = 25°C 0-168 Hours 1.6%
168-1000 Hours 0.86%
High Temperature Reverse Bias 0-168 Hours 1.3%
TA = 150°C, VR = 50 V 168-1000 Hours 0.6%

FAILURE Breakdown Voltage Reverse Current Forward Voltage Capacitance

DEFINITION:
IR = 5/LA VR = 50 V IF = 100 rnA VF = OV
BV >75 V IR <200 nA VF <1.0 V C >2.0 pF

ACOL CUMULATIVE % DEFECTIVE VS. TIME HTRB CUMULATIVE %. DEFECTIVE VS. TIME

10.0
,
I 10.0

1.0
~ i i!
i~
1.0
~
5
~
u
i
0.1
100 ,. "
10K
i
(5 yrs.) lOOK ,. 10K (5 yrs) lOOK

Time (hours) Time (hours)

2-10
 PRODUCT FAMILY 00-35 ZENERS (1/2W) METALLURGICAL BONDED

The Fairchild 500 mW metallurgical bonded zeners include the JAN1N9628-1 through JAN1N973B-1, JAN1N753A-1
through JAN1N759A-1 and others, packaged in the 00-35 glass package. The metallurgical bond provides for improved
VF pull characteristics and better performance during thermal stressing.

OBSERVED
LENGTH FAILURE
TEST DESCRIPTION
OF TEST RATE
Temperature cycling Test Condo C, Method 1051
Thermal Shock Test Condo A, Method 1056
Lead Tension Test Condo A, Method 2036
Hermetic Seal, Cond. G, Method 1071
Moisture Resistance, Method 1021
Shock non-operating, 1500 G, 5 blows, t = .5 ms,
Method 2016
Thermal Resistance, MIL-5-195OO1 117E,
25 Cycles
5 Cycles
15 Seconds

10 Days
0.04%
0.00%
0.00%
0.00%
0.00%
0.00%
•
R 8JL=100°C/W 0.00%
Vibration Variable Frequency non-operating 30 G pk, 48 Minutes 0.00%
Method 2056
Resistance to solvents, MIL-STO-202, Method 215 0.00%
Constant Acceleration non-operating, 20 KG 1 Minute 0.00%
Method 2006
Salt Atmosphere Corrosion, Method 1041.1 24 Hours 0.00%
Lead Fatigue Method 2036.3, Condo E 5 Seconds 0.00%
Surge Current, Ps = 2 W; tp = 1/120 s, - 5 Surges 0.00%
112 square wave pulse
High Temperature Storage 175°C 1000 Hours 0.80%
Zener Operating Life, 0-340-1000 Hours 0-168 0.18%
168-1000 0.61%
Barometric Pressure Reduced, 8 mmHg 60 Seconds 0.00%
Temperature Coefficient of Breakdown Voltage 0.10%
(TCBV) Method 4071
Solderability, Method 2026 5 ± 112 Seconds 0.00%

FAILURE Devices are tested to the JEDEC Electrical Limits

DEFINITION: for that particular device type.

10.0".
ZOPL CUMULATIVE % DEFECTIVE VS. TIME

,.0".
0.1 '::-'...LLllllll:--'-'.J.WIU.-.w..J..J.J..UJI
100 1K
Time (Hou,.)
10K (5 yrs) 1001(

2-11
IN-USE RELIABILITY
To determine the reliability of a diode in its actual application, the following procedure will give a best estimate
based on the data previously presented.
1. Determine what form of life testing is best for the specific application, e.g. ACOL or HTRB.
2. Determine what the average junction temperatur.e (Tj) will be in the application. Do this by adding to the ambient
temperature (TA), the increase of the junction temperature (AT) due to power being dissipated in the device.
This gives you Tj = TA + A T. Figure 1 below gives the typical A T for any given power input. For HTRB Tj=TA.

3. Knowing the junction temperature (Tj), the factor for derated conditions (FD) can be obtained in Figure 2. This
represents the typical difference in the failure rate at the maximum rated condition (Tj = 175°C), and the actual
use conditions. This curve follows these equations.
T' TI
log 10 FD = ~ -3.5 for DCOL, ACOL log 10 FD = 411.7 -3.0 for HTRB
It is the result of extended studies where it was found that failure rates drop an order of magnitude for every
50°C drop in junction temperature. This follows provided the standard manufacturing methods of removing
defective parts have been completed, (i.e. temperature cycle, heat soak, pressure bomb and normal electrical
screening.)
This derating will generally apply to Fairchild diodes, but cannot be guaranteed to apply to other devices.

4. For any given time span, the failure rate at maximum rated conditions can be obtained from the graphs under
each specific product family.

5. Now, by multiplying this failure rate with the factor for derated conditions, we obtain a reasonably accurate
estimate of the expected failure rate for the actual in-use conditions.
Example: Supposing the expected number of failures in a given system is required for a 1N4148-1 diode over a
5-year period. The application of the diode is switching, which demands both forward current and reverse
blocking capabilities. The environment will be 50°C and the diode will typically dissipate 100 mW of power.
First, the switching application demands the use of ACOL data. Then, from the power vs. AT graph (Figure 1)
the 100 mW power level will increase the junction temperature by 35°C. Combining this increase with the
ambient temperature of 50°C, the junction temperature is found to be 85°C.
Tj = TA + AT = 50°C + 35°C = 85°C
Then from Figure 2 in Item 3 the factor for derated condition is found. For Tj = 85°C, FD is 0.016.
Now from the ACOL extrapolated graph under the FDH-6 family in Section IV, the cumulative percent defective
for five years is found to be 0.5%.
Because this percent defective is for maximum rated conditions, it must now be multiplied by Fd to determine
the percent defective for in-use conditions.
Expected failures = 0.5% X .016 = 0.008% over the five year period.

DEVICE POWER DISStPATION FACTOR FOR DERATED CONDITIONS

VS.6.T) VS. JUNCTION TEMP.

175
I'
L 150 /
i 125
ACOL/~
//
~R8

,::
",
,/ ! 100
,/ lh'
~
./
o '" '"
26 50 75 100 125 150 175

.6T-JUNCTION TEMPERATURE INCREASE-OC

>!
25 V
0.001 0.01 0.1
FO-Factor for Delayed Conditions
1.0

Fig 1. Fig 2.

2-12
MONOLITHIC DIODE ARRAY FAMILY
The air-isolated monolithic diode array family consists of a number of diode circuits which have been fabricated in
integrated form rather than as discrete diodes. The circuits available include a 16-diode core driver matrix, an 8-
diode core driver matrix, a bridge, arrays of common cathode and common annode diodes, groups of individual
closely matched diodes and various custom configurations. These circuits are packaged in plastic and ceramic 14-
lead and 16-lead dual-in-line packages, 10 and 14-lead ceramic flat packs and a 1D-lead T0-5 packages. The
bridge circuit is available in 4-lead T0-5 and TO-18 packages.
The diodes in the monolithic array family are by design equivalent to the FDH6 high-speed switching diode. When
the fabrication of the diodes in wafer form is complete, the circuit is interconnected with aluminum and the wafer is
attached to a second wafer using a special glass as the adhesive medium. Through this construction, the entire

•
active portion of the device is buried in such a manner as to be unreachable by any contaminant once the device is
in service.

EpnBxlal Silicon

N+, Channel Stop

Sllcon Backing WIIhIr

QoIdPlaied

TYPICAL CONSTRUCTlON OF A FAIRCHILD MONOLITHIC DIODE ARRAY

2-13
 MONOLITHIC DIODE ARRAY

OBSERVED
LENGTH FAILURE
TEST DESCRIPTION
OF TEST RATE
Temperature Cycling Method 1051, Condo C 10 Cycles 0.0%
Thermal Shock Method 1056 Condo A 10 Cycles 0.0%
Moisture Resistance Method 1021 10 Days 0.0%
Shock 1500G t = 0.5 ms. Method 2016 5 Blows 0.0%
Vibration Variable Frequency 20G (pk) 48 Minutes 0.0%
Method 2056
Vibration Fatigue 20 G (pk), Method 2046 96 Hours 0.0%
Constant Acceleration 20 k G (pk) 3 Minutes 0.0%
Method 2006
Lead Fatigue 45° arcs, Method 2036, Condo E 6 Seconds 0.0%
Salt Atmosphere, Method 1041 24 Hours 0.0%
Hermetic Seal, Fine and Gross, Method 1071 0.05%
Surge Current IF = 50 mA IF (surge) = 500 mA (pk) 10 Surges 0.0%
tp = 1/120 s, Method 4066
High Temperature Storage, 200°C 1000 Hours 0.0%
AC Operating Life; 10 = 300 mA/package 0-168 Hours 0.18%
VR = 50 V, TA = 25°C 168-1000 Hours 0.06%
High Temperature Reverse Bias; TA= 150°C 0-168 Hours 0.21%
VR = 50V 168-1000 Hours 0.12%

FAILURE Breakdown Voltage Reverse Current Forward Voltage

DEFINITION:
IR = 10 /-<A VR = 40 V IF = 500 rnA
BV >60 V IR <200 nA VF <1.5 V

ACOl CUMULATIVE % DEFECTIVE VS. TIME HTRB CUMULATIVE % DEFECTIVE VS. TIME

=Ie
-
10.0 I
1-
10.0
i I

~.
-,

1.0
-1 :-, h 1.0
! i , I I

-CT t-t-

0.1
..... II 1+1 '
0.1
i I II
100 1K 10K (5 yrs.) 1001< 100 1K 10K (5 yrs) lOOK

Time (hours) Time (hours)

2-14
 BAV17-BAV1S-BAV19-BAV20-BAV21
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• VF ... 1.0 V (Max)@ 100 mA 00·35 OUTLINE

• IR ... 100 nA @WIV

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage
BAV 17 20 V
BAV 18 50 V 0.021 (0.533) DIA
0.011 (0.483)
BAV 19 100 V
BAV 20 150 V
BAV 21 200 V
10 Average Rectified Current 100 mA NOTES:
IF Continuous Forward Current 300 mA Copper clad steel leads, tin plated
if Peak Repetitive Forward Current 400 mA Gold plated leads available
if(surge) Peak Forward Surge Current Hermetically sealed glass package
Pulse Width= 1 /LS 4A Package weight is 0.14 gram
Pulse Width= 1 s 1A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.00 V IF=100 mA
1.25 V IF=200 mA
IR Reverse Current BAV 21 100 nA VR=200 V
15 /LA VR=200 V, TA=100°C
BAV 20 100 nA VR=150 V
15 J.l.A VR=150 V, TA=100°C
BAV 19 100 nA VR=100 V
15 /LA VR=100 V, TA=100·C
BAV 18 100 nA VR=50 V
15 J.l.A VR=50 V, TA=100°C
BAV 17 100 nA VR=20 V
15 J.l.A VR=20 V, TA=100°C
BV Breakdown Voltage BAV 21 250 V IR=100/LA
BAV 20 200 V IR=100 J.l.A
BAV 19 120 V IR=100 J.l.A
BAV18 60 V IR=100 IJ.A
BAV 17 25 V IR=100 IJ.A
C Capacitance 1.5 5.0 pF VR=O,I=l MHz
trr Reverse Recovery Time (Note 3) 50 ns 1,=30mA,lr =30mA,
RL=1000
dill Differential Resistance 5.0 0 IF=10mA
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty·cycte operation.
3. Recovery to 'R=3 rnA.
4. For product family characteristic curves, refer to Chapter 4 BAV 17/1804, BAV 19/20/21 01.

3-3
 BAW7S·BAW76
HIGH SPEED COMPUTER DIODES
SILICON PLANAR EPITAXIAL

• t rr ... 4 ns (max)
• C ... 4 pf (max) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o-:r (25.40)MIN

i
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C

Power Dissipation (Note 2) 0.180 (4.57)

Maximum Total Power Dissipation at 25°C Ambient 0.140 (3.56)
500mW

I~IJ~"'.,~
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage BAW 75 25V
BAW 76 50V
10 Average Rectified Current 100 rnA
IF Continuous Forward Current 300 rnA
0.021 (0.533) DIA
if Peak Repetitive Forward Current 400 rnA 0.019 (0.483)
if (surge) Peak Forward Surge Current 0.060 (152)
Pulse Width = 1 s 1.0 A
Pulse Width = 1 f.ls 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

BAW 75 BAW 76
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 1.0 V IF = 30 rnA
1.0 V IF = 100 rnA
IR Reverse Current 100 nA VR = 25 V
100 nA VR = 50 V
100 f.lA VR = 25 V, TA = 150°C
100 f.lA VR = 50 V, TA = 150°C
BV Breakdown Voltage 35 75 V IR = 5.0 f.lA
C Capacitance 4.0 2.0 pF VR = 0, f = 1 MHz
trr Reverse Recovery Time 4.0 4.0 ns If = Ir = 10 rnA
Recovery to 1 rnA
2.0 2.0 ns If = 10 rnA, VR = 6 V,
RL = 100n
NOTES,
1. These ratings are limiting vatues above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, D4.

3-4
 BAX13
HIGH SPEED SWITCHING DIODE
DIFFUSED SILICON PLANAR

• c ... 3.0 pF (MAX)

• t rr ... 4.0 ns (MAX) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o---:r(25.40)MIN

i
•
Maximum Operating Junction Temperature +175°C
Lead Temperature +260°C

Power Dissipation (Note 2) 0.180 (4.57)

0.140 (3.56)
Maximum Total Dissipation at 25°C Ambient 500 mW
Linear Derating Factor (from 25°C) 3.33 mW/oC

hT- J

tIII ~". , ~
Maximum Voltages and Currents
VRRM Repetitive Peak Reverse Voltage 50 V
VR Reverse Voltage 50 V
10 Average Rectified Current 100 rnA
IF Forward Current 300 rnA 0.021 (0.533) OIA
if Recurrent Peak Forward Current 400 rnA 0.018 (0.483)
IFSM Peak Forward Surge Current 0060(152)
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 J1.S 4.0 A NOTES:
Copper clad sleel leads, lin pia led
Gold pia led leads available
Hermetically sealed glass package
Package weighl is 0.14 gram

ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless, e notE<d)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.7 V IF = 2.0 rnA
0.8 V IF = 10 rnA, TA = 100°C
1.0 V IF = 20 rnA
1.53 V IF = 75 rnA
IR Reverse Current 25 nA VR = 10 V
10 ,.,A VR = 10 V, TA = 150'C
50 nA VR = 25 V
200 nA VR = 50 V
25 ,.,A VR = 50 V, TA = 150°C
C Capacitance 3.0 pF VR = 0, , = 1.0 MHz
trr Reverse Recovery Time 4.0 ns I, = 10 rnA, Vr = 6.0 V, RL = lOOn,
I Ir = 1.0 rnA

I Os
NOTES,
I Recovered Charge 45 pC If = 10 rnA, Vr = 5.0 V, RL = 500n

1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. For product family characteristic curves, refer to Chapter 4, 04.

3-5
 BAX16
GENERAL PURPOSE INDUSTRIAL DIODE
DIFFUSED SILICON PLANAR

• BV ... 180 V (MIN) @ 100 p,A

DO-35 OUTLINE
• IR ... 100 nA (MAX)@ 150V

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -S5°C to +200°C
o-:r (26.40)MIN

Maximum Junction Operating Temperature

Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
+175°C
+2S0°C

500mW
i0.180(4.57)
0.140 (3.58)

~IJ~,. ._
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 150 V
10 Average Rectified Current 200 mA
IF Continuous Forward Current 500 mA
if Peak Repetitive Forward Current SOOmA 0.021 (0.633) DIA
0.0111(0.483)
if(surge) Peak Forward Surge Current
Pulse Width = 1 s 1.0 A O.QlO (152)

Pulse Width = 1 p,s 4.0 A

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.5 V IF = 200 rnA
1.4 V IF = 200 rnA, TA = 175°C
1.3 V IF = 100 rnA
0.85 V IF = 10 rnA, TA = 100°C
0.65 V IF = 1 rnA
IR Reverse Current 100 nA VR = 150V
100 p,A VR = 150 V, TA = 150°C
25 nA VR = 50 V
25 p,A VR = 50 V, TA = 150°C
BV Breakdown Voltage 180 V IR = 100 p,A
C Capacitance 10 pF VR = 0, f = 1 MHz
trr Reverse Recovery Time (Note 3) 120 ns IF = 30 rnA, IR = 30 rnA
RL = 100 {}
as Stored Charge 700 pC IF = 10 rnA, VR = 5 V
RL = 500 {}
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to IR = 3 rnA.
4. For product family characteristic curves, refer to Chapter 4, 01.

3-6
 BAY71
FAST SWITCHING DIODE
DIFFUSED SILICON PLANAR

• t rr ... 4.0 ns (MAX)

• C ... 2.0 pF (MAX) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
O-:! (25.40)MIN

Max Junction Operating Temperature

Lead Temperature

Power Dissipation (Note 2)

Maximum Total Dissipation at 25°C Ambient
+175°C
+260°C

500 mW
i 0.180 (4.67)
0.140 (3.56)

Linear Derating Factor (from 25°C) 3.33 mW/oC

J

-l~t-"'''N
Maximum Voltage and Currents
WIV Working Inverse Voltage 35 V
10 Average Rectified Current 100 mA
IF Forward Current Steady State DC 300 mA
if Recurrent Peak Forward Current 400 mA
0.021 (0.533) DIA
if(surge) Peak Forward Surge Current 0.019 (0.483)
Pulse Width = 1.0 s 1.0 A 0.060 (1.52)
Pulse Width = 1.0 IlS 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.76 1.00 V IF = 20 mA
0.69 0.88 V IF = 10 mA
0.57 0.69 V IF = 1.0 mA
0.46 0.56 V IF = 0.1 mA
IR Reverse Current 100 nA VR = 35 V
100 f.LA VR=35V,TA= 125°C
BV Breakdown Voltage 50 V IR = 5.0 f.LA
trr Reverse Recovery Time (Note 5) 2.0 ns IF = 10 mA, IR = 6.0 mA,
RL = 100 n, VR = 6.0 V

Vir Forward Recovery Peak Voltage (Note 3) 3.0 V IF = 100 mA (pulsed)

tlr Forward Recovery Time (Note 3) 40 ns IF = 100 mA (pulsed)

Os Stored Charge (Note 4) 65 pC IF = 20 mA, IR = 2.0 mA

50 pC IF = 10 mA, IR = 1.0 mA
RE Rectilication Efficiency (Note 6) 45 % 1= 100 MHz
C Capacitance 2.0 pF VR = 0, I = 1.0 MHz
NOTES.
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. The OSCilloscope used as the response detector shall have a bandwidth of at least 10 MHz (3 dB down), and shall be calibrated using a deposited carbon resistor of 50 n in the diode
test clips. tfr is defined as the difference between the 10% point of the pulse and the point where VF is to within 10% of the quiescent value.
4. Measured on the Tektronix "S" unit.
5. Recovery to 1.0 rnA.
6. Rectification efficiency is defined as the ratio of dc load voltage to peak rf input voltage to the detector circuit, measured with 2.0 V rms input to the circuit. Load resistance 5.0 kQ, load
capacitance 20 pF.
7. For product family curves, refer to Chapter 4,04.

3-7
 BAY72·BAY80
GENERAL PURPOSE, HIGH CONDUCTANCE DIODES
DIFFUSED SILICON PLANAR
00-35 OUTLINE

• VF ... 1.0 V (MAX) @ 100 mA (BAY72)

• VF ... 1.0 V (MAX) @ 150 mA (BAY80) o-:r (25.40)MIN

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Maximum Junction Operating Temperature
-65°C to +200°C
+175°C
i 0.180 (4.57)
0.140 (3.56)

~IJ=". , ~
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage BAY 72 100 V 0.021 (0.533) DIA
0.019 (0.483)
BAY 80 120 V
0.060 (152)
10 Average Rectified Current 200 rnA
IF Continuous Forward Current 500 rnA NOTES:
if Peak Repetitive Forward Current 600 rnA Copper clad steel leads, tin plated
if(surge) Gold plated leads available
Peak Forward Surge Current Hermetically sealed glass package
Pulse Width = 1 s 1.0 A Package weight is 0.14 gram
Pulse Width = 1 I'S 4.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

BAY 72 BAY 80
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 1.00 V IF = 150 rnA
0.78 1.00 V IF = 100 rnA
0:73 0.92 V IF = 50 rnA
0.63 0.78 V IF = 10 rnA
0.51 0.64 V IF = 1.0 rnA
IR Reverse Current 100 nA VR = 120 V
150 p.A VR=120V,TA= 100°C
100 nA VR = 100V
100 p.A VR=100V,TA= 125°C
BV Breakdown Voltage 125 150 V IR = 100 p.A
C Capacitance 5.0 6.0 pF VR = 0, I = 1 MHz

trr Rev. Rec. Time (note 3) 50 60 ns II =I r = 30 rnA, RL = 75 fl

(note 4) 400 ns II = 30 rnA, VR = 35 V

VIr Fwd. Rec. Voltage (note 5) 2.5 v RL = 2.0 Kfl, CL = 10 pF

VIr Fwd. Rec. Voltage (note 5) 2.5 V If = 100 rnA (pulsed)

tfr Fwd. Rec. Time (note 5) 50 ns If = 100 rnA (pulsed)

Os Stored Change (note 6) 250 pC If = 20 rnA, Ir = 1.0 rnA

RE Rect. Efficiency (note 7) 35 % f = 100 MHz
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 1.0 mAo
4. Recovery to 400 kU, Jan 256 Circuit.
5. The oscilloscope used as the response detector shall have a bandwidth of at least 10 MHz (3 dB down), and shall be calibrated using a deposited carbon resistor of 50 fl in the diode
test clips. tfr is defined as the difference between the 10% point of the pulse and the point where VF is to be within 10% of the quiescent value. Pulse conditions shall be 0.1 "'s wide at
base, 20 ns maximum rise time, repetition rate = 100 kHz max.
6. Measured on the Tektronix "S" unit.
7. Rectification efficiency is defined as the ratio of dc load voltage to peak rf input to the circuit. Load resistance of 5.0 kn, load capacitance 20 pF.
8. For product family characteristic curves, reter to Chapter 4, Dl.

3-8
 BAY73·BA129
HIGH VOLTAGE, LOW LEAKAGE DIODES
DIFFUSED SILICON PLANAR

• BV ... 125 V (MIN) @ l00,..A (BAY73)

• BV ... 200 V (MIN) @ l00,..A (BA 129) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o----:r
(215.40,1IIN

Maximum Junction Operating Temperature +175°C

i
•
Lead Temperature +260°C

Power Dissipation (Note 2) 0.180 (·Ui7)

0.140 (3.68)
Maximum Total Power Dissipation at 25°C Ambient 500 mW

~IJ_".,,~
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage BAY73 100 V
BA129 180 V
10 Average Rectified Current 200 rnA
IF Continuous Forward Current 500 rnA 0.021 (0.633) DlA
if Peak Repetitive Forward Current 600 rnA 0.018 (0.483)

if(surge) Peak Forward Surge Current 0.010 (162)

Pulse Width = 1 s 1.0 A

Pulse Width = 1 /LS 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

BAY73 BA129
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 0.85 1.00 V IF = 200 mA
0.81 0.94 V IF = 100 rnA
0.78 0.88 0.78 1.00 V IF =50 rnA
0.89 0.80 0.89 0.83 V IF = 10 rnA
0.67 0.75 V IF = 5.0 mA
0.60 0.68 0.60 0.71 V IF = 1.0 mA
0.51 0.60 V IF = 0.1 mA
IR Reverse Current 500 nA VR = 20 V, TA = 125°C
5.0 nA VR = 100 V
1.0 ,..A VR = 100 V, TA = 125°C
10 nA VR = 180 V
5.0 ,..A VR = 180 V, TA = 100°C
BV Breakdown Voltage 125 200 V IR = 100,..A
C Capacitance 8.0 6.0 pF VR = 0, f = 1.0 MHz
trr Reverse Recovery Time 3.0 ,..s If = 10 mA, Vr = 35 V
RL = 1.0 to 100 KG
CL = 10 pf, JAN 256
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulses or low duty-cyole operation.
3. For product family characteristic curves, refer to Chapter 4, 02

3-9
 BAY74
HIGH CONDUCTANCE ULTRA FAST DIODE
SILICON PLANAR EPITAXIAL

•. t rr ... 4.0 n8 (MAX)

00-35 OUTLINE
• C ... 3.0 pF (MAX)

D~
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures (26.4O)IIIN
Storage Temperature Range -65° C to +200° C
Maximum Operating Junction Temperature
Lead Temperature

Power DI8slpation (Note 2)

+175° C
+260° C
i0.180 (4.67)
0.140 (3.ee)
Maximum Total Dissipation at 25° C Ambient

[~""~
500mW
Linear Deviation Factor (from 25° C) 3.33 mW

Maximum Voltage and Currents

WIV Working Inverse Voltage 35 V
10 Average Rectified Current 100 rnA
IF Continuous Forward Current 300 rnA
if Recurrent Peak Forward Current 400 rnA 0.021 (0.1533) DIA
0.018 (0.483)
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A O.QlO (162)

Pulse Width = 1.0 /LS 4.0 A

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.85 1.10 V IF = 300 rnA
0.82 1.00 V IF = 200 rnA
0.78 0.93 V IF = 100 rnA
0.73 0.88 V IF = 50 rnA
0.65 0.77 V IF = 10 rnA
0.54 0.65 V IF = 1.0 rnA
IR Reverse Current 100 nA VR = 35 V
100 /LA VR = 35 V,TA = 125° C
BV Breakdown Voltage 50 V IR = 5.0/LA
C Capacitance 3.0 pF VR = 0, , = 1.0 MHz

trr Reverse Recovery Time (Note 4) 4.0 ns I, = Ir = 10 rnA to 200 rnA

6.0 ns I, = Ir = 200 rnA to 400 rnA
trr Reverse Recovery Time (Note 3) 6.0 ns 1,= 10mA,lr = 1.0 rnA
NOTES.
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady-state limits. The factory should be consulted on applications involving pulses or low duty-cycle operations.
3. Recovery to 0.1 rnA.
4. Recovery to 10% of If.
5. For product family characteristic curves, refer to Chapter 4, 04.

3-10
 BAY82· 1N4244·1N4376
ULTRA-FAST SWITCHING DIODES
DIFFUSED SILICON PLANAR

• t rr ... 750 ps (MAX)

00-7 OUTLINE
• C ... 0.8 pF (MAX) 1N4244

ABSOLUTE MAXIMUM RATINGS (Note 1)

•
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 250mW
Linear Power Derating Factor (from 25°C) 1.67 mW / °C
0.275 (6.99)
0.230 (5.84)
Maximum Voltage and Currents
WIV
10
IF
if
if(surge)
Working Inverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current
Pulse Width = 1 s
10 V (12 V BAY82)
50 rnA
150 rnA
150 rnA

250 rnA
-+
~---=C'
1 .•

NOTES:
Dumet leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.19 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

BAY82 1N4244 1N4376
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX

VF Forward Voltage 0.90 1.35 0.89 1.10 V IF = 50 mA

0.80 1.00 1.00 0.81 0.95 V IF = 20 mA
0.77 0.94 0.76 0.88 V IF = 10 rnA
0.64 0.79 0.64 0.74 V IF = 1.0 rnA
0.53 0.66 0.52 0.61 V IF = 0.1 rnA
0.41 0.53 0.42 0.50 V IF = 10fJA
IR Reverse Current 100 100 nA VR = 10 V
100 100 fJA VR = 10 V. TA = 150°C
100 nA VR = 12 V
50 fJA VR = 12 V. TA = 100°C
250 nA VR = 15 V
BV Breakdown Voltage 15 20 20 V IR = 5.0 fJA
C Capacitance 1.3 0.8 1.0 pF VR = O. f = 1 MHz

trr Reverse Recovery 750 750 750 ps If = Ir = 10 rnA

Time (Note 3) RL = 100 n
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to Ir = 1.0 rnA.
4. For product family characteristic curves, refer to Chapter 4, D3.

3-11
 BA12S·BA130
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

00-35 OUTLINE

• WIV ... 50 V (BA128), 25 V (BA130)

• IR ... 100 nA (MAX)@WIV

ABSOLUTE MAXIMUM RATINGS (Note 1) 0.180 (.4.67)

0.140 (3.66)

liIJ~, , ,~
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature 175°C
Lead Temperature (10 seconds) 260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC 0.021 (0.533) DIA
0.011 (0.483)

0.060 (152)
Maximum Voltage and Currents
WIV Working Inverse Voltage BA128 50 V
BA130 25 V NOTES:
10 Average Rectified Current 200 rnA Copper clad steel leads, tin plated
Continuous Forward Current 500 rnA Gold plated leads available
IF
Hermetically sealed glass package
if Peak Repetitive Forward Current 600 rnA
Package weight is 0.14 gram
if (surge) Peak Forward Surge Current
Pulse Width = 1 5 1.0 A
Pulse Width = 1 /15 4.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noled)

BA128 BA130
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 0.73 1.00 V IF = 50 mA
0.63 0.79 0.69 1.00 V IF = 10 mA
0.51 0.64 0.56 0.71 V IF = 1.0 rnA
0.40 0.52 0.45 0.58 V IF = 0.1 mA
0.34 0.47 V IF = 0.01 mA
IR Reverse Current 100 nA VR = 50 V
100 nA VR = 25 V
100 /1A VR = 50 V, TA = 100·C
100 /1 A VR = 25 V, TA = 100·C
BV Breakdown Voltage 75 V IR= 100/1A
30 V IR= 5/1A
C CapaCitance 5.0 2.0 pF VR = 0, f = 1.0 MHz
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications Involving pulsed or low duty·cycle operation.
3. For product family characteristic curves, refer to Chapter 4. 04.

3-12
 BA180·BA181
GENERAL PURPOSE DIODES
SILICON PLANAR

• BV ... 10 V (MIN) @ 100 /LA (BA 180)

• BV ... 20 V(MIN)@ 100 /LA (BA181) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o-:r (25.4O)IIIN

Maximum Junction Operaling Temperature

Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
+175°C
+260°C

500mW
i 0.180 (.Ui7)
0.140 (3.S8)

IlIJ_,. , ~
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage BA180 10V
BA181 20 V
10 Average Rectified Current 100 rnA
IF Continuous Forward Current 300 rnA 0.021 (0.633) DIA
if Peak Repetitive Forward Current 400 rnA 0.011 (0.483)

if (surge) Peak Forward Surge Current 0.080 (152)

Pulse Width = 1 s 1.0 A
Pulse Width = 1 /LS 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.0 V IF = 4 mA
IR Reverse Current 1.0 /LA VR = 5.0 V
BV Breakdown Voltage BA1S0 10 V IR = 100/LA
BA1S1 20 V IR = 100/LA
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 04.

3-13
 BA216-BA217-BA21S-BA219
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• WIV ... 10 V to 100 V

• t rr ... 4 ns (MAX) BA216-218 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
Dio)MIN
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
+ 175°C
+260°C

500 mW
i 0.180 (4.57)
0.140 (3.56)

Linear Power Derating Factor (from 25 ° C) 3.33 mW/oC

J
~-".,,~
Maximum Voltage and Currents
WIV Working Inverse Voltage BA216 10 V BA217 30 V
10 Average Rectified Current BA218 50 V BA219 100V
IF Continuous Forward Current 100 rnA
If Peak Repetitive Forward 0.021 (0.533) DIA
0.019 (0.483)
Current 300 rnA
0.080 (1.52)
if(surge) Peak Forward Surge Current 400 rnA
Pulse Width 1s = 1.0 A
Pulse Width = 1 J.l.S 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

BA216 BA217·BA218 BA219
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
VF Forward Voltage 1.40 IF = 100 rnA
1.50 IF = 50 rnA
0.70 1.00 IF = 15 rnA
1.00 0.85 IF = 10 rnA
0.60 0.80 IF = 3.0 rnA
0.70 0.65 IF = 1.0 rnA
0.50 0.62 IF = 0.2 rnA
IR Reverse Current 1500 nA VR = 10 V
BA217 50 nA VR = 10 V
8A218 50 nA VR = 25 V
BA217 200 nA VR = 30 V
BA218 200 nA VR = 50 V
200 nA VR ~ 50 V
500 nA VR = 100 V
C Capacitance 3.0 3.0 5.0 pF VR = O. f = 1 MHz
Irr Qeverse Recovery Time 4.0 4.0 ns IF = 10 rnA, IR = 60 rnA
RL = 100 Q (Note 3)
120 ns IF = 30 rnA, IR = 30 rnA

NOTES:
I RL = 100 Q (Note 4)

1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to IR = 1 rnA.
4. Recovery to IR = 3 rnA.
5. For product family characteristic curves, refer to Chapter 4, 04

3-14
 BA243·BA244
BANDSWITCH DIODES
DIFFUSED SILICON PLANAR

• RS ... 0.5 n (MAX) BA244

00-35 OUTLINE
• C ... 2 pF (MAX)

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures

•
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C
0.180 (4.57)
0:"140 (3.56)
Power Dissipation (Note 2)

IJl " , ~_
Maximum Total Power Dissipation at 25°C Ambient 250 mW
Linear Power Derating Factor (from 25°C) 1.67 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 15 V
IF Continuous Forward Current 100 rnA
0.021 (0.533) DIA
0.019 (0.483)

0060 (152)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.90 1.0 V IF = 100 rnA
IR Reverse Current 5.0 100 nA VR = 15 V
0.05 1.0 p.A VR= 15V,TA = 60°C
BV Breakdown Voltage 20 V IR = 5.0 p.A
C Capacitance 1.7 2.0 pF VR = 15 V, 1= 1 MHz
Capacitance Variation 1.0 OJo/V VR = 7 - 20 V, I = 1 - 100
AC
MHz,
C.AVR
with Reverse Voltage Relative to VR = 7 V
RS Series Resistance BA243 0.70 1.0 n 11= 10mA,I= 1-100 MHz
BA244 0.40 0.50 n II = 10 rnA, I = 1-100 MHz
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, D7.

3-15
 BB121A·BB121B·BB122
UHF, VHF / FM VARACTOR DIODES
DIFFUSED SILICON PLANAR

• C3/C25 ... 4.5-6.0

• MATCHED SETS (Note 2) 00·35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

o~
Temperatures ;2~.40)MIN

i
Storage Temperature Range -55°C to + 150°C
Maximum Junction Operating Temperature +150°C
Lead Temperature +260°C
0.180 (4.57)
Maximum Voltage 0.140 (3.56)

~(=". , ~
WIV Working Inverse Voltage 30V

0.021 (0.533) DIA

0.019 (0.483)

0.060 (152)

NOTES:
Copper clad steel leads, tin pleted
Gold plated leeds available.
Hermetically sealed glas8 pack8ge
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 30 V IR = 100 IJ,A
IR Reverse Current 10 50 nA VR = 28 V
C Capacitance BB 121A 17 pF VR = 1.0 V, I = 1 MHz
11 pF VR = 3.0 V, 1= 1 MHz
2.00 2.20 2.35 pF VR = 25 V, I = 1 MHz
BB 121B 18 pF VR = 1.0 V, I = 1 MHz
12 pF VR = 3.0 V, I = 1 MHz
2.25 2.45 2.65 pF VR = 25 V, I = 1 MHz
BB 122 20 pF VR = 1.0 V, I = 1 MHz
13 pF VR = 3.0 V, I = 1 MHz
2.10 2.45 2.80 pF VR = 25 V, I = 1 MHz
C3/C25 Capacitance Ratio 4.5 5.2 8.0 VR = 3 V 125 V, I = 1 MHz
RS Series Resistance BB 121A1B 0.6 0.8 !l C = 9 pF, I = 470 MHz
BB 122 0.9 1.2 !l C = 9 pF, I = 470 MHz
10 Series Resonant Frequency BB 121A1B 2.0 GHz VR = 25 V
BB 122 1.8 GHz VR = 25 V
LS Series Inductsnce 2.5 nH 1.5 mm Irom case
NOTES.
1. Theae ratings are limiting v.lue. above which the serviceability of the diode may be impaired.
2. The capacitance difference between any two diodes In one set 18 18S8 than 3% for the Be 121 A
and BS 121 Band les8 than 6% for the Be 122 over the reverse voltage range of 0.6 V to 28 V.
3. For product family characteristic curves, refer to Chapter 4, 011.

3-18
 88139
VHF/FM VARACTOR DIODE
DIFFUSED SILICON PLANAR

• C3/C25 ... 5.0-6.5

• MATCHED SETS (Note 2) 00·35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -55°C to +150°C
o--:r (25.40)MIH

Maximum Junction Operating Temperature

Lead Temperature

Maximum Voltage
WIV Working Inverse Voltage
+150°C
+260°C

30 V
i0.180 (4.57)
0.140 (3.56)

hT- J
0.021 (0.533) DIA
0.019 (0.483)

NOTES:
ill ~."., ~ 0.060 (1 52)

Copper clad steel leads, tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 30 V IR= 100 !LA
IR Reverse Current 10 50 nA VR = 28 V
0.1 0.5 !LA VR = 28 V, TA = 60°C
C Capacitance 29 pF VR = 3.0 V, 1 = 1 MHz
4.3 5.1 6.0 pF VR = 25 V, 1 = 1 MHz

C3 /C 25 Capacitance Ratio 5.0 5.7 6.5 VR = 3 V 125 V, 1 = 1 MHz

Q Figure 01 Merit 150 VR = 3.0 V, 1 = 100 MHz

RS Series Resistance 0.35 {} C = 10 pF, 1 = 600 MHz

LS Series Inductance 2.5 nH 1.5 mm Irom case

10 Series Resonant Frequency 1.4 GHz VR = 25 V

NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. The capacitance difference between any two diodes in one set is le88 than 3% over the reverse voltage range of 0.5 V to 28 V.
3. For product family characteristic curves, refer 10 Chaptar 4, 012.

3-17
 BB204B·BB204G·MV104
DUAL FM VARACTOR DIODES
DIFFUSED SILICON PLANAR

• c ... 37-42 pF (BB204B, MV104) TO-92 OUTLINE

• C ... 34-39 pF (BB204G)
• Q ... 100 (MIN) (MV104)

or,:-o 1 ,205 15.20'1

.175 {4.451
. DIA.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature Range 2' (4 32)
.170
-55°C to +150°C
Maximum Junction Operating Temperature +150°C J .~
~
Lead Temperature

Power Dissipation (Nole 2)

+260°C
.500 (12.70)
MIN. n~ U:i PLANE

3 LEADS
.019 (O.483)
~U .Ol~I~~61
Maximum Total Power Dissipation at 25°C Ambi.ent 280mW ~.136 (3.43)
Linear Power Derating Factor 2.24 mW/oC MIN .
. 100 (2.54)
T.P,
Maximum Voltage and Currents
WIV Working Inverse Voltage 30 V
IF Continuous Forward Current 200 mA

NOTES:
Copper leads, tin plated
Transfer moulded thermosetting plastic
package
Package weight is 0.25 gram
Pins 1 and 3 are anode connections and pin 2
is common cathode connection

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC (each diode) MIN TYP MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 32 IR = 10 itA
IR Reverse Current 5.0 50 nA VR = 30 V
50 500 nA VR = 30 V, TA = 60°C
C Capacitance BB204B, MV104 37 42 pF VR = 3 V, f = I MHz
BB204G 34 39 pF VR = 3 V, f = I MHz

C3/ C30 Capacitance Ratio BB204B, BB204G 2.4 2.6 2.8 VR = 3 V, 1 = I MHz
MV104 2.5 2.65 2.8 VR = 3 V, 1 = I MHz

LS Series Inductance 6.0 nH 1 = 250 MHz 1.5m / m leads

RD Dynamic Resistance MVI04 0.2 n VR @ 38 pF, 1 = 100 MHz
BB204B, BB204G 0.2 0.4 n VR@ 38 pF, 1 = 100 MHz

Cc Case Capacitance 0.18 pF 1 = I MHz, 1.5m /m leads

TCC Capacitance Temperature Coellicient 280 400 ppm/DC
Q Figure 01 Merit MV104 100 125 VR = 3 V, 1 = 100 MHz
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 09.

3-18
 BZX55C3V3 - BZX55C33
500 mW SILICON ZENER DIODES
ABSOLUTE MAXIMUM RATINGS (Note 1)
00-35 OUTLINE
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +200°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor (from 25°C) 2.85 mW/oC

•
Maximum Surge Power (Note 4) 30W

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient)

SYMBOL Vz Zz ZZK IR VRT IZM TC
Zener Maximum Maximum Maximum Test Voltage Maximum Typical
Voltage Zener Zener Knee Reverse Zener Temperature
CHARACTERISTIC
(Note 3) Impedance Impedance Current Current Coefficient
@IZ=5.0mA @IZ=5.0mA @IZK=1.0mA @VRT of Vz
MIN MAX 150°C

UNIT V V !1 !1 /LA V /LA Of%C

BZX55C3V3 3.1 3.5 85 600 40 1.0 115 -0.060

BZX55C3V6 3.4 3.8 85 600 40 1.0 108 -0.055
BZX55C3V9 3.7 4.1 80 600 40 1.0 100 -0.050
BZX55C4V3 4.0 4.6 70 600 40 1.5 90 -0.040
BZX55C4V7 4.4 5.0 60 600 30 1.5 85 -0.020
BZX55C5Vl 4.8 5.4 35 550 2.0 1.0 79 +0.010
BZX55C5V6 5.2 6.0 25 450 2.0 1.0 74 +0.025
BZX55C6V2 5.8 6.6 10 200 2.0 2.0 69 +0.032
BZX55C6V8 6.4 7.2 8.0 150 2.0 3.0 64 +0.040
BZX55C7V5 7.0 7.9 7.0 50 2.0 5.0 59 +0.045
BZX55C8V2 7.7 8.7 7.0 50 2.0 6.0 54 +0.048
BZX55C9Vl 8.5 9.6 10 50 2.0 7.0 49 +0.050
BZX55Cl0 9.4 10.6 15 70 2.0 7.5 44 +0.055
BZX55Cll 10.4 11.6 20 70 2.0 8.5 40 +0.060
BZX55C12 11.4 12.7 20 90 2.0 9.0 36 +0.065
BZX55C13 12.4 14.1 26 110 2.0 10 32 +0.070
BZX55C15 13.8 15.6 30 110 2.0 11 30 +0.070
BZX55C16 15.3 17.1 40 170 2.0 12 27 +0.075
BZX55C18 16.8 19.1 50 170 2.0 14 24 +0.075
BZX55C20 18.8 21.2 55 220 2.0 15 22 +0.080
BZX55C22 20.8 23.3 55 220 2.0 17 20 +0.080
BZX55C24 22.8 25.6 80 220 2.0 18 18 +0.085
BZX55C27 25.1 28.9 80 220 2.0 20 16 +0.085
BZX55C30 28.0 32.0 80 220 2.0 22 15 +0.085
BZX55C33 31.0 35.0 80 220 2.0 24 13 +0.085
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on application involving pulsed or low duty-cycle operation.
3. ±20%. ± 10%, ±2% and ± 1% Vz tolerance versions are available.
4. Non·recurrent square wave, PW == 100 ~s, TJ = 150°C.
5. VF = 1.0 V (max) @ IF = 100 rnA for all types.
6. For product family characteristic curves, refer to Chapter 4, D13.

3-19
 BZX85C3V3 - BZX85C33
1 W SILICON ZENER DIODES
00-41 OUTLINE

.031 U87l . _n~

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
.029C737J
U 1
1.20 (30.5)

I
1.10 (.27.9)
Storage Temperature Range -65'C to +200'C
Maximum Junction Operating Temperature +175'C .10012.54'-4
.090 (2.29) I II
Lead Temperature +260'C
-+
CI ]
",i~_ _ _ _

.175 (4.45)
.165 (4.19)
Power Dissipation (Note 2) 'Ji=i!'---------'-!
Maximum Total Power Dissipation at 50'C Ambient 1.3W .155 (3.94) ~ ~
.145 (3.68) .057 (1.45)
Linear Power Derating Factor (from 50'C) 10.4 mW/' .055 (1.40)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.30 gram

ELECTRICAL CHARACTERISTICS (25'C Ambient)

SYMBOL Vz Zz IZT ZZK IZK IR VRT TC
Zener Maximum Test Maximum Test Maximum Test Temperature
Voltage Zener Current Zener Knee Current Reverse Voltage Coefficient of Vz
CHARACTERISTICS @IZT Impedance Impedance Current @IZT
@IZK @VRT
MIN MAX @IZT MIN MAX
UNIT V V Q mA Q mA p.A V Ofo°C %'C
BZX85C3V3 3.1 3.5 20 80 400 1.0 40 1.0 -0.080 -0.050
BZX85C3V6 3.4 3.8 15 60 500 1.0 20 1.0 -0.080 -0.050
BZX85C3V9 3.7 4.1 15 60 500 1.0 10 1.0 -0.070 -0.020
BZX85C4V3 4.0 4.6 13 50 500 1.0 3.0 1.0 -0.050 +0.010
BZX85C4V7 4.4 5.0 13 45 600 1.0 3.0 1.5 -0.030 +0.040
BZX85C5Vl 4.8 5.4 10 45 500 1.0 1.0 2.0 -0.010 +0.040
BZX85C5V6 5.2 6.0 7.0 45 400 1.0 1.0 2.0 0 +0.045
BZX85C6V2 5.8 6.6 4.0 35 300 1.0 1.0 3.0 +0.010 +'0.055
BZX85C6V8 6.4 7.2 3.5 35 300 1.0 1.0 4.0 +0.015 +0.060
BZX85C7V5 7.0 7.9 3.0 35 200 0.5 1.0 4.5 +0.020 +0.065
BZX85C8V2 7.7 8.7 5.0 25 200 0.5 1.0 5.0 +0.030 +0.070
BZX85C9Vl 8.5 9.8 5.0 25 200 0.5 1.0 6.5 +0.035 +0.075
BZX85ClO 9.4 10.6 7.0 25 200 0.5 0.5 7.0 +0.040 +0.080
BZX85Cli 10.4 11.6 8.0 20 300 0.5 0.5 7.7 +0.045 +0.080
BZX85C12 11.4 12.7 9.0 20 350 0.5 0.5 8.4 +0.045 +0.085
BZX85C13 12.4 14.1 10 20 400 0.5 0.5 9.1 +0.050 +0.085
BZX85C15 13.8 15.6 15 15 500 0.5 0.5 10.5 +0.055 +0.090
BZX85C16 15.3 17.1 15 15 500 0.5 0.5 11.0 +0.055 +0.090
BZX85C18 16.8 19.1 20 15 500 0.5 0.5 12.5 +0.060 +0.090
BZX85C20 18.8 21.2 24 10 600 0.5 0.5 14.0 +0.060 +0.090
BZX85C22 20.8 23.3 25 10 600 0.5 0.5 15.5 +0.060 +0.095
BZX85C24 22.8 25.6 25 10 600 0.5 0.5 17.0 +0.060 +0.095
BZX85C27 25.1 28.9 30 8.0 750 0.25 0.5 19.0 +0.060 +0.095
BZX85C30 28.0 32.0 30 8.0 1000 0.25 0.5 21.0 +0.060 +0.095
BZX85C33 31.0 35.0 35 8.0 1000 0.25 0.5 23.0 +0.060 +0.095
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on application involving pulsed or low duty-cycle operation.
3. VF= 1.0 V (Max) @IF = 200 mA for all types.
4. For product family characteristic curves, refer to Chapter 4,014
3-20
 BZY88C3V3 - BZY88C33
500 mW SILICON ZENER DIODES
00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

0-1 10
t25.40)MIN

i
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +200°C
Lead Temperature +260°C 0.180 (4.57)
0.140 (3.56)

Power Dissipation (Note 2)

---rr-J
ill ~"'., •
Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor (from 25°C) 2.85 mW/oC
Maximum Surge Power (Note 3) 15 W

0.021 (O.533)DIA
0.019 (0.463)

0060(152)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (AT Iz =1.0 mA, 25°C Ambient)

SYMBOL Vz Zz TC
Zener Temperature
Maximum
CHARACTERISTIC Voltage Coefficient of Vz
Zener
MIN NOM MAX Impedance MIN TYP MAX
UNIT V V V n mV/oC mV/oC mV/oC

BZY88C3V3 2.4 2.75 3.0 440 -4.5 -1.9 -0.5

BZY88C3V6 2.7 3.0 3.3 430 -4.5 -2.05 -0.5
BZY88C3V9 3.0 3.3 3.6 430 -3.5 -2.4 -0.5
BZY88C4V3 3.3 3.6 3.9 430 -2.7 -2.25 -0.5
BZY88C4V7 3.7 4.1 4.3 420 -2.5 -2.0 -0.3
BZY88C5Vl 4.3 4.65 5.0 370 -2.1 -1.9 -0.3
BZY88C5V6 4.8 5.3 5.7 350 -1.8 -1.4 0
BZY88C6V2 5.7 5.9 6.5 250 0 +1.6 +3.0
BZY88C6V8 6.3 6.7 6.9 70 +2 +3.2 +3.7
BZY88C7V5 7.0 7.45 7.8 20 +3 +4.2 +5.9
BZY88C8V2 7.8 8.1 8.5 20 +4.3 +5.0 +6.0
BZY88C9Vl 8.55 9.0 9.5 24 +4.5 +6.0 +7.0
BZY88Cl0 9.3 9.9 10.5 50 +6.0 +6.6 +7.0
BZY88Cl1 10.3 10.9 11.5 70 +7.1 +8.3 +9.0
BZY88C12 11.3 11.9 12.5 80 +7.6 +8.7 +9.2
BZY88C13 12.3 12.9 13.0 90 +9.1 +10.1 +11.1
BZY88C15 13.8 14.9 15.5 95 +11 +12.5 +13
BZY88C16 15.3 15.8 16.9 100 +12 +13 +14
BZY88C18 16.7 17.8 18.9 120 +14 +15 +16.5
BZY88C20 18.7 19.8 21.0 140 +16 +17 +18.5
BZY88C22 20.6 21.8 23.1 150 +17 +19 +21
BZY88C24 22.5 23.8 25.7 200 +19 +21 +23
BZY88C27 24.7 26.6 28.5 300 +21 +22.5 +25
BZY88C30 27.5 29.5 31.5 350 +22 +24 +29
BZY88C33 29.5 32.0 34.5 450 +23 +25 +35
NOTES,
1. These ratings are limiting values above which the serviceability of the diode mav be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Non-recurrent square wave, PW = 100 ~s, T J = 150"C
4. VF = 0.9 V (Max) @IF = 10 rnA for all types
5. For Product Family Characteristic curves, refer to Chapter 4, 013

3-21
 FAIRCHILD. BZY88C3V3 - BZY88C33
ELECTRICAL CHARACTERISTICS (AT IZ = 50 mA 25°C Ambient)
SYMBOL Vz Zz TC
Zener Maximum Temperature
CHARACTERISTIC Voltage Coefficient of Vz
Zener
MIN NOM MAX Impedance MIN TYP MAX
UNIT V V V Il mV/oC mV/oC mV/oC

BZY88C3V3 3.1 3.3 3.5 110 -4.0 -2.3 -0.5

BZY88C3V6 3.4 3.6 3.8 105 -3.5 -2.0 -0.5
BZY88C3V9 3.7 3.9 4.1 100 -2.5 -2.05 -0.5
BZY88C4V3 4.0 4.3 4.5 90 -2.5 -1.8 -0.5
BZY88C4V7 4.4 4.7 5.0 85 -2.0 -1.55 0
BZY88C5Vl 4.8 5.1 5.4 75 -1.75 -1.2 0
BZY88C5V6 5.3 5.6 6.0 55 -1.5 -0.2 +1.0
BZY88C6V2 5.8 6.2 6.6 27 +0.5 +2.0 +3.5
BZY88C6V8 6.4 6.8 7.2 15 +2.3 +3.2 +3.8
BZY88C7V5 7.1 7.5 7.9 15 +3.1 +4.2 +5.9
BZY88C8V2 7.8 8.2 8.7 20 +4.2 +5.0 +6.0
BZY88C9Vl 8.6 9.1 9.6 25 +4.8 +6.0 +7.0
BZY88Cl0 9.4 10 10.6 25 +6.0 +7.0 +7.5
BZY88Cli 10.4 11 11.6 25 +7.0 +8.7 +9.1
BZY88C12 11.4 12 12.6 35 +8.5 +9.0 +9.6
BZY88C13 12.4 13 14.1 35 +10 +10.5 +11.5
BZY88C15 13.9 15 15.6 35 +12 +12.5 +14
BZY88C16 15.4 16 17.1 40 +12 +13 +14
BZY88C18 16.9 18 19.1 45 +14 +15 +18
BZY88C20 18.9 20 21.2 50 +16 +17 +19
BZY88C22 20.8 22 23.3 60 +17 +19 +21
BZY88C24 22.7 24 25.9 75 +20 +21 +24
BZY88C27 25.1 27 28.9 85 +22 +23.5 +27
BZY88C30 28 30 32 95 +25 +26 +29
BZY88C33 31 33 35 120 +27 +28 +36
ELECTRICAL CHARACTERISTICS (AT Iz = 20 mA 25°C Ambient)
SYMBOL Vz Zz TC
Zener Maximum Temperature
CHARACTERISTIC Voltage Coefficient of Vz
Zener
MIN NOM MAX Impedance MIN TYP MAX
UNIT V V V n mV/oC mV/oC mV/oC
BZY88C3V3 3.5 4 4.2 22 -3.3 -2.4 -0.5
BZY88C3V6 3.9 4.2 4.4 20 -2.5 -1.55 -0.5
BZY88C3V9 4.2 4.45 4.65 18 -2.4 -1.55 -0.5
BZY88C4V3 4.45 4.7 4.95 17 -2.0 -1.5 -0.5
BZY88C4V7 4.9 5.1 5.3 17 -1.5 -0.85 0
BZY88C5Vl 5.1 5.35 5.7 11 -1.5 -0.8 0
BZY88C5V6 5.45 5.75 6.1 8.0 -1.0 +1.0 +3.0
BZY88C6V2 5.95 6.4 6.7 3.1 +1.0 +2.2 +4.0
BZY88C6V8 6.6 6.9 7.25 3.0 +2.8 +3.2 +3.8
BZY88C7V5 7.2 7.65 7.95 5.0 +2.5 +4.2 +5.9
BZY88C8V2 7.9 8.4 8.75 6.0 +4.0 +5.0 +6.0
BZY88C9Vl 8.7 9.4 9.7 7.0 +5.0 +6.0 +7.0
BZY88Cl0 9.5 10.1 10.8 8.0 +7.0 +7.3 +7.5
BZY88Cli 10.5 11.1 11.8 10 +8.5 +9.1 +9.5
BZY88C12 11.6 12.2 12.8 25 +8.9 +9.6 +10.3
BZY88C13 12.6 13.2 14.3 25 +11 +11.5 +12.5
BZY88C15 14.1 15.3 15.9 25 +12 +13.5 +14.5
BZY88C16 15.6 16.3 17.4 30 +13 +14 +15
BZY88C18 17.2 18.4 19.6 30 +15 +16 +18
BZY88C20 19.3 20.5 21.9 35 +17.5 +18.5 +20.5
BZY88C22 21.3 22.6 24.1 35 +19 +20.5 +22.5
BZY88C24 23.3 24.7 26.7 40 +20 +23 +25
BZY88C27 25.8 28.1 30.1 45 +23 +25.5 +28
BZY88C30 29.0 31.3 33.4 50 +25 +28 +32
BZY88C33 32.0 34.2 36.6 60 +27 +30 +38

3-22
 FAIRCHILD. BZY88C3V3 - BZY88C33
ELECTRICAL CHARACTERISTICS (25°C Ambient)
SYMBOL C IR VRT
Typical Maximum Test
CHARACTERISTIC Capacitance Reverse Current Voltage
@VR = 3.0V @VRT
UNIT pF J.l.A V
BZY88C3V3 395 3.0 1
BZY88C3V6 370 3.0 1
BZY88C3V9 335 3.0 1
BZY88C4V3 270 3.0 1
BZY88C4V7 290 3.0 2
BZY88C5V1 275 1.0 2
BZY88C5V6 260 1.0 2

•
BZY88C6V2 240 1.0 2
BZY88C6V8 220 1.0 3
BZY88C7V5 190 0.5 3
BZY88C8V2 150 0.4 3
BZY88C9V1 140 0.4 5
BZY88C10 110 2.5 7
BZY88C11 90 2.5 7
BZY88C12 80 2.5 8
BZY88C13 65 2.5 9
BZY88C15 60 2.5 10
BZY88C16 55 2.5 10
BZY88C18 50 2.5 13
BZY88C20 45 2.5 14
BZY88C22 43 2.5 15
BZY88C24 42 2.5 17
BZY88C27 40 2.5 19
BZY88C30 35 2.5 21
BZY88C33 35 2.5 23

3-23
 FA SERIES
PAIR, QUAD AND BRIDGE DIODE ASSEMBLIES
SILICON PLANAR EPITAXIAL
• f!.VF ... Down to 3 mV (MAX)
• f!.IR ... Down to 10 nA (MAX)

GENERAL DESCRIPTION
The FA series of diode assemblies are pairs, quads and bridges composed of individual glass PACKAGE OUTLINE
diodes encapsulated in epoxy packages. The pairs and quads are also available in unenCapsu-
FA2300 SERIES
lated form, the diodes being securely taped together for shipment.
SUFFIX E
These assemblies feature very tight matching characteristics over broad temperature and cur-
rent ranges.

ABSOLUTE MAXIMUM RATINGS (Note 1) .182 (4.62)

.162 (4.11) ---I ~.112 (2.84)
I I .104 (2.64)
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
lead Temperature +260°C

I
f-
Power Dissipation (Note 2) .455 (10.56)
Maximum Total Power Dissipation at 25°C Ambient
3S
Each Diode 250mW •

'.00~25.401
Encapsulated Package 500mW
linear Power Derating factor (from 25 ° C)
Each Diode 1.67 mW / °C
Encapsulated Package 3.33 mW/oC
.300 (7.62)
Maximum Voltage and Currents .280 (,533)

Basic Diode (See Specification below) FD1389 FD2389 FD3389 FD6389 NOTES:
WIV Working Inverse Voltage 75 V 150 V 125 V 50 V Dumet leads, tin plated
Average Rectified Current 100 rnA 100 rnA 150 rnA 200 rnA Gold plated leads available
10
Hermetically sealed glass diodes
IF Continuous Forward Current 150 rnA 150 rnA 225 rnA 300 rnA
encapsulated in epoxy
if Recurrent Peak Forward Current 300 rnA 300 rnA 450 rnA 600 rnA Package weight is 0.95 gram
if(surge) Peak Forward Surge Current
Pulse width = 1.0 s 1.0 A 1.0 A 1.0 A 1.0 A
Package Outline 308
Pulse width = 1.0 J.l.S 4.0 A 4.0 A 4.0 A 4.0 A

MATCHING CHARACTERISTICS (Apply over temperature range of -55°C to +100°C)

Basic Oiode Reverse Current Forward Voltage Assembly Type Number
(See Spec i- Forward Current Match Match Encap- Unencap- Encap- Unencap-
fication Matching Range (f!.IR Maximum) (f!.VF Maximum) sulated sulated sulated sulated Bridge
below) (Notes 4 & 6) (Note 3) Pair Pair Quad Quad (Note 6)
F01389 10llAto 1.0mA 3.0 mV FA2310E FA2310U FA4310E FA4310U FA3310
F01389 10llAto 1.0mA 10 mV FA2311E FA2311U FA4311E FA4311U FA3311
F01389 1.0 rnA to 10 rnA 5.0 mV FA2312E FA2312U FA4312E FA4312U FA3312
F01389 1.0 rnA to 10 rnA 15 mV FA2313E FA2313U FA4313E FA4313U FA3313
F02389 10 IlA to 1.0 rnA 3.0 mV FA2320E FA2320U FA4320E FA4320U FA3320
F02389 10 IlA to 1.0 rnA 10 mV FA2321E FA4321U FA4321E FA4321U FA3321
F02389 1.0 rnA to 10 rnA 5.0 mV FA2322E FA2322U FA4322E FA4322U FA3322
F02389 1.0 rnA to 10 rnA 15 mV FA2323E FA2323U FA4323E FA4323U FA3323
F02389 10 rnA to 100 rnA 10mV FA2324E FA2324U FA4324E FA4324U FA3324
F02389 10 rnA to 100 rnA 20 mV FA2325E FA2325U FA4325E FA4325U FA3325
F03389 10 IlA to 1.0 rnA (2.0 + 0.064 VR) nA 10 mV FA2330E FA2330U FA4330E FA4330U FA3330
F03389 1.0 rnA to 10 rnA (2.0 + 0.064 VR) nA 15 mV FA2331E FA2331U FA4331E FA4331U FA3331
F03389 10 rnA to 100 rnA (2.0 + 0.064 VR) nA 20 mV FA2332E FA2332U FA4332E FA4332U FA3332
F03389 10 IlA to 1.0 rnA (4.0 + 0.128 VR) nA 10mV FA2333E FA2333U FA4333E FA4333U FA3333
F03389 1.0 rnA to 10 rnA (4.0 + 0.128 VR) nA 15 mV FA2334E FA2334U FA4334E FA4334U FA3334
F03389 10 rnA to 100 rnA (4.0 + 0.128 VR) nA 20 mV FA2335E FA2335U FA4335E FA4335U FA3335
F06389 10 rnA to 100 rnA 10 mV FA2360E FA2360U FA4360E FA4360U FA3360
F06389 10 rnA to 100 rnA 20 mV FA2361E FA2361U FA4361E FA4361U FA3361

3-24
 FAIRCHILD. FA SERIES

FA3300 SERIES FA2300 SERIES FA4300 SERIES

FA4300 SERIES SUFFIX E

I] ° I
SUFFIX U
.18214621 I I::~: gg::
~~
.200 (5.08)

l11-
MAX.
~_ _~+-.5.~~~:701 1-- ~~O:)M'X.".
0.021 (0.533) DIA.
097 (246) ___ .328 (8.33)
:.8311:75) - .~~----I~-+-'.3~2'*.T.18i'1.1~31 0.011 (0.483)

-r:~:m~~:
1

~f~~~
)0 .112 (2.84)

~
.104 (2.64)

~-il
MAX. 0.27S (8.99)

L 1 2
0.230 (5.84)

NOTES:
Dumet leads, tin plated
~ ~
Gold plated leads available
Hermetically sealed glass diodes
encapsulated in epoxy NOTES:
Leads 1 and 2 are the common anode and NOTES: Dumet leads, tin plated
cathode terminals respectively. Leads Dumet leads, tin plated Gold plated leads available
3 and 4 are the two anode I cathode Gold plated leads available Hermetically sealed glass diodes
terminals Hermetically sealed glass package encapsulated in epoxy
Package weight in 1.4 grams Package weight is 0.19 gram Package weight is 1.5 grams

Package Outline 309 Package Outline DO-7 Package Outline 310

BASIC DIODE ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)
FD1389 FD2389 FD3389 FD8389
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
BV Breakdown Voltage 100 V IR = 5.0,.A
200 150 75 V IR = 100,.A
IR Reverse Current 100 100 1.0 100 nA VR = WIV
100 100 3,0 100 ,.A VR = WIV, TA = 150°C
VF Forward Voltage 1.000 1.000 1.000 V IF = 200 mA
0.925 0.930 0.920 V IF = 100mA
0.860 0.880 0.860 V IF = 50 mA
1.000 0.790 0.840 0.790 V IF = 20 mA
0.875 0.740 0.810 0.750 V IF = 10 mA
0.800 0.700 0.770 0.710 V IF = 5.0 mA
0.725 0.620 0.730 0.670 V IF = 2.0 mA
0.670 0.610 0.710 0.630 V IF = 1.0 mA
C Capacitance (Note 5) 2.0 5.0 6.0 3.0 pF VR = 0, f = 1 MHz

trr Reverse Recovery Time 4.0 ns If = Ir = 10 mA

Recover to 1.0 mA
50 ns If = Ir = 30 mA
Recover to 1.0 mA
4.0 ns If=lr =200mA
Recover to 20 mA
NOTES:
1. Thes. are Limiting values above which life or satisfactory performance may be impaired
2. These are steady state Limits. The factory should be consuRed on applications involving pulsed or low duty-cycle operation.
3. The Revefse Current ~atch (aiR> is the difference In reverse current between the diode having the highest 'R and that having the lowest 'R In a given assembly. The reverse voltage
(VR) in the aiR calculation can be any vslue up to 125 V. For example, the maximum aiR for an FA2330E at VR of 10 V is (2.0 + 0.064 x 10) nA or 2.64 nA.
4. The Forward Current Matching Ranges between 10 Jl.A and 10 mA may be applied either a8 a dc current or a pulse current. Above 10 mA, however, the matching characteristics are
guaranteed only for low duty cycle (:s:; 1%) pulse current. Conditions of test are shown in the characteristic curve and test circuit section of this book (see Note 7).
5. Capacitance cannot be monitored independently on each diode in a bridge configuration. In measuring capacitance in a bridge, the limit is 4/3 that shown in the basic diode electrical
characteristics.
6. For matched bridges, the forward current range specified is per leg. Therefore, twice the current specified is applied to the assembly.
7. For product family characteristics curves for the basic diodes used In the assemblies, refer to the following parts of Section 4.
F0138904
F0238901
F0338902
FD838904
For test circuits. refer to Chapter 4, D 18.

3-25
 FDH300·FDH333
HIGH CONDUCTANCE LOW LEAKAGE DIODES
DIFFUSED SILICON PLANAR

• BV ... 150 V (MIN) @ 100 p.A

• IR ... 1.0 nA (MAX)@ 125 V (FDH300), 3.0 nA (MAX)@ 125 V (FDH333) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200·C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260·C

Power Dissipation (Note 2) 0.180(4.57)

0.140 (3.56)
Maximum Total Dissipation at 25°C Ambient 500mW

~IJ=::~~
Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltages and Currents

WIV Working Inverse Voltage 125 V
10 Average Rectified Current 200 mA
IF Forward Current Steady State 500mA
if Recurrent Peak Forward Current 600 mA 0.021 (0.633) DIA
if(surge) Peak Forward Surge Current 0.01. (0.483)

Pulse Width = 1.0 s 1.0 A

Pulse Width = 1.0 /oIS 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

FDH300 FDH333
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 0.9 1.15 V IF = 300 mA
0.88 1.08 V IF = 250 mA
1.0 0.87 1.05 V IF = 200 mA
0.86 0.97 V IF =150 mA
0.92 0.83 0.94 V IF = 100 mA
0.88 0.80 0.89 V IF=50mA
0.8 V IF = 10 mA
0.75 V IF = 5.0 mA
0.68 V IF = 1.0 mA
IR Reverse Current 1.0 3.0 nA VR = 125 V
3.0 IlA VR = 125 V, TA = 150·C
500 nA VR = 125 V, TA = 100°C
C Capacitance 6.0 6.0 pF VR = 0, f = lMHz
BV Breakdown Voltage 150 150 V IR = IOOIlA
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. Theae are steady state limits. The factory should be consulted on applications Involving pulsed or low duty cycle operations.
3. For family characteristic curves, refer to Chapter 4. 02.

3-26
 FDH400·FDH444
HIGH VOLTAGE GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• BV ... 200 V (MIN) FDH400

... 150 V (MIN) FDH444 00-35 OUTLINE
• VF ... 1.1 V (MAX) @ 300 mA FDH400
@ 200 mA FDH444

ABSOLUTE MAXIMUM RATINGS (Note 1)

o-:r (25.040)IIIN

Temperatures
Storage Temperature Range -65°C to +200°C
i
•
Max Junction Operating Temperature +175°C
Lead Temperature +260°C 0.180 (4.57)
0.140 (3.56)

~IJ~"",,~
Power Dissipation (Note 2)
Maximum Total Dissipation at 25°C Ambient 500mW
Linear Derating Factor (from 25 0 C) 3.33 mW/oC

Maximum Voltage and Currents FDH400 FDH444

WIV Working Inverse Voltage 175 V 125 V
10 Average Rectified Current 200 rnA 200 rnA
0.021 (0.533) DIA
'F Forward Current Steady State 500 rnA 500 rnA 0.018 (0.483)
if Recurrent Peak Forward Current 600 rnA 600 rnA 0.060(152)
if(surge) Peak Forward Surge Current
Pulse width = 1.0 s 1.0 A 1.0 A
NOTES:
Pulse width = 1.0 p,s 4.0 A 4.0 A Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

FDH400 FDH444
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX

VF Forward Voltage 1.1 1.2 V IF = 300 mA

1.0 1.1 V IF = 200 mA
BV Breakdown Voltage 200 150 V IR=100p.A
IR Reverse Current 100 nA VR = 150 V
50 nA VR = 100 V,
100 p,A VR= 150V,TA= 150 a C
100 p,A VR = 100 V, TA = 150°C
C Capacitance 2.0 2.5 pF VR = 0, f = 1.0 MHz
trr Reverse Recovery Time fiO 60 ns If = 30 mA, Ir = 30 mA
RL = 100 n, Irr = 3.0 mA
NOTES,
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycte operations.
3. For product family characteristic curves, refer to Chapter 4, D 1.

3-27
 FDH600·FDH666
ULTRA FAST DIODES
DIFFUSED SILICON PLANAR EPITAXIAL

• c ... 2.5 pF (MAX) FDH600, 3.5 pF (MAX) FDH666

• VF ... 1.0 V (MAX)@ 100 mA (FDH666) 00-35 OUTLINE
... 1.0 V (MAX)@ 200 mA (FDH600)
• t rr ... 4.0 ns (MAX) @ If = Ir = 10 mA

ABSOLUTE MAXIMUM RATINGS (Note 1) o--:r(25.40)MIN

i
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C 0.180 (4.57)
0.140 (3.56)

[~[J_,,",,~
Power Dissipation (Note 2)
Maximum Totai Dissipation at 25°C Ambient 500mW
Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents FOH 600 FOH 666

WIV Working Inverse Voltage 50 V 25 V
10 Average Rectified Current 200 rnA 200 rnA
0.021 (O.533) DIA
IF Continuous Forward Current 500 rnA 500 rnA 0.019 (0.483)
if Recurrent Peak Forward Current 600 rnA 600 rnA
0.060 (152)
if(surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A 1.0 A
Pulse Width = 1.0 /.IS 4.0 A 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless otherwise noted)

FDH600 FDH666
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 1.0 V IF = 200 mA
0.92 1.0 V IF = 100 mA
0.86 0.86 V IF = 50 mA
0.79 0.79 V IF = 10 mA
0.65 0.65 V IF = 1.0 mA
IR Reverse Current 0.1 J.<A VR = 50 V
0.1 J.<A VR = 25 V
100 J.<A VR = 50 V, TA = 150°C
100 J.<A VR = 25 V, TA = 150°C
BV Breakdown Voltage 75 40 V IR = 5.0 J.<A
trr Reverse Recovery Time (Note 3) 4.0 4.0 ns If = I, = 10 mA, RL = 100 Q
6.0 6.0 ns If = Ir = 200 mA, RL = 100 Q
C Capacitance 2.5 3.5 pF VR = 0, f = 1.0 MHz
NOTES.
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 0.1 IR'
4. For product famity characteristic curves, refer to Chapter 4, D4.

3-28
 FDH900·FDH999
HIGH SPEED SWITCHING DIODES
DIFFUSED SILICON PLANAR

• BV ... 45 V (FDH900), 35 V (FDH999)

• t rr ... 4.0 ns (FDH900), 5.0 ns (FDH999) DO-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C

•
Max. Junction Operating Temperature +175°C
Lead Temperature +260°C

0.180 (04,57)
Power Dissipation (Note 2)
0.140 (3.56)
Maximum Total Dissipation at 25°C Ambient 500 mW

Il(_". ,~
Linear Derating Factor (From 25°C) 3.3 mW/oC.

Maximum Voltage and Currents

WIV Working Inverse Voltage FDH900 40 V
FDH999 25 V
10 Average Rectified Current 200 rnA
IF Continuous Forward Current 500 rnA 0.021 (0.533) DIA
if Recurrent Peak Forward Current 600 rnA 0.01' (Q.0483)

if(surge) Peak Forward Surge Current 0.080(152)

Pulse Width = 1.0 s 1.0 A
NOTES:
Pulse Width = 1.0 /.IS 4.0 A Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

FDH900 FDH999
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
BV Breakdown Voltage 45 35 V IR = 5.0 I'A
IR Reverse Current 1.0 I'A VR = 25 V
500 nA VR = 40 V
VF Forward Voltage 1.0 V IF = 10 mA
1.0 V IF = 100 mA
C Capacitance 3.0 5.0 pF VR = O. f = 1.0 MHz
trr Reverse Recovery Time 4.0 5.0 ns If = 10 mA, Ir = 10 rnA,
RL = 100 n, Irr = 1.0 mA
NOTES:
1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, D4.

3-29
 FDH1000
HIGH CONDUCTANCE SWITCHING DIODE
DIFFUSED SILICON PLANAR

• VF ... 1 V (MAX) @ 500 mA

• aS ... 100 pC (MAX)
00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
D~ (25.40)MIN

i
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C
0.180 (4.57)
0.140 (3.56)
Power Dissipation (Note 2)

~J
Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 50 V

Itl
10 Average Rectified Current 200 rnA

fi
IF Continuous Forward Current 500 rnA
if
if(surge)
Peak Repetitive Forward Current
Peak Forward Surge Current
600 rnA 0.021 (0.533) DIA
0.019 (0.463) ="'''' ••
0.060("2)
Pulse Width = 1 s 1.0 A
Pulse Width = 1 j.lS 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VI Forward Voltage 1.0 V IF = 500 mA
IR Reverse Current 5.0 iJ,A VR = 50 V
50 nA VR = 20 V
50 iJ,A VR = 20 V, TA = 125°C
BV Breakdown Voltage 75 V IR = 100 iJ,A
C Capacitance 5.0 pF VR = O. f = 1.0 MHz

aS Stored Charge 100 pC If = 10 mA, VR = 10 V

NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.

3-30
 FD700·FD777
PICOSECOND COMPUTER DIODES
DIFFUSED SILICON PLANAR

• c ... 1.0 pF (MAX)@ VR = 0, f = 1.0 MHz (FD 700)

• t rr ·· .700 ps (MAX) @ If = Ir = 10 mA, RL = 100 Q (FD 700) 00-7 OUTLINE
• CONTROLLED FORWARD CONDUCTANCE
1--- 7,':;,MAX OIA.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature Range
FD700 FD777
1~
_II-
IJ _
0.021 (0.533) DIA.
0.019 (0.483)

,I.

•
Max Junction Operating Temperature ~ (25.40(

~-t
Lead Temperature
Power Dissipation
Maximum Total Dissipation at 25°C
0.275 (8,99)
Ambient 250mW 250 mW 0.230 (5.84)

-+
Linear Derating Factor (from 25 ° C) 1.67 mW / °C 1.67 mW/oC
Maximum Voltages and Currents
WIV Working Inverse Voltage 20 V 8.0 V
10 Average Rectified Current 50 rnA 50 rnA 1 .•

~~'
IF Forward Current Steady State dc 150 rnA 150 rnA
if Recurrent Peak Forward Current 150 rnA 150 rnA
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 250 rnA 250 rnA
NOTES:
Dumet leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.19 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

FD700 FD777
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
VF Forward Voltage 0.89 1.10 0.89 1.35 V IF = 50 rnA
0.81 0.95 0.81 1.00 V IF = 20 rnA
0.76 0.88 0.76 0.94 V IF = 10 rnA
0.64 0.74 0.64 0.79 V IF = 1.0 rnA
0.52 0.61 0.52 0.64 V IF = 0.1 rnA
0.42 0.50 0.42 0.53 V IF = 0.01 rnA
BV Breakdown Voltage 30 15 V IR = 5.0 JlA
IR Reverse Current 50 nA VR = 20 V
100 nA VR = 8.0 V
50 JlA VR = 20 V, TA = 150°C
50 JlA VR = 8.0 V, TA = 150°C

T Minority Carrier Lifetime 450 450 ps (see Note 2)

trr Reverse Recovery Time (Note 3) 700 750 ps If = Ir = 10 rnA, RL = 100 Q

C Capacitance 1.0 1.3 pF VR = 0, f = 1.0 MHz
NOTES,
1. The maximum ratings Bre limiting values above which life or satisfactory performance may be impaired.
2. Measured as suggested by S. M. Krakauer, IRE Proceedings, Volume 60, July 1962, pp. 1674 - 1675.
3. Recovery to 0.1 IR-
4. For product family characteristic curves, refer to Chapter 4, 03.

3-31
 FH1100 • 1N5390
HOT CARRIER DIODE
DIFFUSED SILICON

• os ... 1.6 pC (TVP)

• c ... 1.0 pF (MAX) 00-7 OUTLINE
• NF ... 10 dB (MAX) @ f = 890 MHz

ABSOLUTE MAXIMUM RATINGS (Note 2)

Temperatures
Storage Temperature Range -65°C to +150°C
Max Junction Operating Temperature +125°C
Lead Temperature +260°C

Power Dissipation (Note 3)

Maximum Total Dissipation at 25°C Ambient 100mW 0.275 (8.99)
Linear Derating Factor (from 25°C) 1.0 mW/oC 0.230 (5.84)

~~)
-+ 1.•

NOTES:
Dumet leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.19 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.55 V IF = 10 rnA
IR Leakage Current FH1100 1.0 ,.A VR=1.0V
lN5390 50 nA VR = 1.0 ~
BV Breakdown Voltage 5.0 V IR = 100,.A
C Capacitance 1.0 pF VR = O,f = 1.0 MHz
NF Noise Figure 10 dB f = 690 MHz

aS Stored Charge (Note 1) FHll00 1.6 pC If = lOrnA

lN5390 3.0 pC If= lOrnA
NOTES:
1. Measured on B-Line Electronics QS-3 stored charge meter.
2. The maximum ratings are limiting values above which life or satisfactory performance may be Impaired.
3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
4. For product family characteristic curves, refer to Chapter 4,.010.

3-32
 FJT1100·FJT1101
UL TRA LOW LEAKAGE
DIFFUSED SILICON PLANAR DIODES

• IR ... 1.0 pA (MAX) @ 5 V (FJT1100)

• BV ... 20 V (MIN) (FJT1100) 00-7 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperature
Storage Temperature Range -55°C to +200°C

•
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient 250 mW
Linear Power Derating factor (from 25 ° C) 1.67 mW/oC 0.275 (6,99)
0.230 (5.84)

Maximum Voltage and Current

WIV
If
Working Inverse Voltage FJTll00
Continuous Forward Current FJT 11 0 1
25 V
15 V
150 rnA -+
~--=C'
I .•

NOTES:
Dumet leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.19 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage FJTll00 30 V IR = 5.0 I'A
FJT1101 20 V IR = 5.01'A
IR Reverse Current FJTll00 1.0 pA VR = 5.0 V
10 pA VR = 15 V
FJT1101 5.0 pA VR = 5.0 V
15 pA VR = 15 V
VF Forward Voltage FJT1100 1.05 V IF = 50 rnA
FJT1101 1.10 V IF = 50 rnA
C Capacitance FJTll00 1.5 pF VR = 0, f = 1 MHz
FJT1101 1.8 pF VR = 0, f = 1 MHz

NOTES:
1. These are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed of low duty-cycle operation.
3. For product family characteristic curves and applications information, refer to Chapter 4, 06.

3-33
 FSA 141 OM • FSA 1411 M • FSA2002M • FSA2003M
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRA YS*

• c ... 5.0 pF (MAX) CONNECTION DIAGRAM

• /!;VF ... 15 mV (MAX)@ 10 mA
FSA1410M
ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

-55°C to +200°C
+150°C
+260°C lfffffff+
Maximum Dissipation per Junction at 25 ° C Ambient 400 mW
per Package at 25 ° C Ambient 600 mW See Package Outline TO-96
Linear Derating Factor (from 25°C) Junction 3.2 mW / °C '--_ _ _ _ _ _ _ _ _ _ _ _ _--'
Package 4.8 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 55 V
IF Continuous Forward Current 350 rnA
if(surge) Peak Forward Surge Current
Pulse Width= 1.0 s 1.0 A
Pulse Width= 1.0 IlS 2.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = to /LA
VF Forward Voltage (Note 3) 1.5 V IF = 500 rnA
1.1 V IF = 200 rnA
1.0 V IF = 100 rnA
IR Reverse Current 100 nA VR = 40 V
Reverse Current (TA = 150°C) 100 /LA VR = 40 V
C Capacitance 5.0 pF VR = 0, f = 1 MHz
VFM Peak Forward Voltage 4.0 V If = 500 rnA, t r <10 ns
tfr Forward Recovery Time 40 ns If = 500 rnA, t r < 10 ns
trr Reverse Recovery Time to ns If = Ir = 10-200 rnA
RL = 100 n, Rec. to 0.1 Ir
50 ns If = 500 rnA, Ir = 50 rnA
RL = 100 n, Rec. to 5 rnA
/!;VF Forward Voltage Match 15 mV IF = 10 rnA
NOTES.
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation.
3. VF is measured using an 8 ma pulse.
4. For product family characteristic curves and test circuits, refer to Chapter 4, D15.

'8 COMMON CATHODE, 8 COMMON ANODE

3-34
 FAIRCHILD. DIODE ARRAYS

FSA1411M FSA2002M FSA2003M

jfffffff+ ffffffff I ffffffff I "

See Package Outline TO-96 See Package Outline TO-85 See Package Outline TO-85

TO-96 OUTLINE To-as OUTLINE

.040
(1.016~_
MAX. ,----
.260 (6.60)
.240 (6.10)

I * SEATING
:~~~~_ 1 1.5:P:!1::~:
10 LEADS
-ruu-l--PLANE ~ (1.27)
~5_ _ _ _~', _ _ _ _ _T~Y~P~'_L_

m~~~~[ill
.020 (0.511 .040(1.016) .500 (12.70)
.016 W.41l MAX. MIN. .370 (9.39) L .. ___I I
I .250 (6.35)~ 10.----1- :=~~ !~:~:l
DIA.

.230 (5.842) --to~--I

T.P. .115(2.921)
T.P.
GLASS
H
.006 U52)
L .•351.88.' I
TYP.
.... (6.601
~ .240 16.10)----'"
~
I t
.081 10.2161
.004 (,092) .075 (0.1911

"0
36"
T'P"~
~~
~// V
1

8
7INSULATING STANDOFF-
SHAPE MAY VARY
NOTES:
Alloy 42 leads, tin plated

.034 (0.864)
.0;;
.0
(1143)
(0.737)
Gold plated leads available
Hermetically sealed ceramic package
MI(O:7fTi Dot or tab indicates lead 1
Package weight is 0.26 gram

NOTES:
Kovar leads, gold plated
Hermetically sealed package
Package weight is 1.32 grams

3-35
 FSA2500M·FSA2501M·FSA2501p·FSA2502M
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRA YS*

• c ... 5.0 pF (MAX)

• VF ... 15 mV (MAX)@ 10 mA CONNECTION DIAGRAMS
FSA2500M
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature Range (M Suffix) -55° C to +200° C
(P Suffix) -55° C to +150° C
Maximum Junction Operating Temperature +150° C
Lead Temperature +260° C

Power Dissipation (Note 2)

Maximum Dissipation per Junction at 25° C Ambient 400mW See Package Outline TO·a5
Maximum Dissipation per Package at 25° C Ambient 650mW
Linear Derating Factor (from 25 ° C) Junction 3.2 mW/o C
Package 5.2 mW/o C

Maximum Voltage and Currents

WIV Working Inverse Voltage 50 V
IF Continuous Forward Current 350 rnA
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
Pulse width = 1.0 itS 2.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 10 itA
VF Forward Voltage (Note 3) 1.0 V IF = 100 rnA
1.1 V IF = 200 rnA
1.5 V IF = 500 rnA
AVF Forward Voltage Match (Note 6) 15 rr.V IF =10 rnA
IR Reverse Current (Note 4) 100 nA VR = 50 V
200 itA VR=50V,TA=125°C
C Capacitance (Note 5) 5.0 pF VR = 0, f = 1.0 MHz
tfr Forward Recovery Time (Note 6) 40 ns If = 500 rnA
trr Reverse Recovery Time (Note 6) 10 ns If = Ir = 10 rnA to 200 rnA
RL = 1000, Irr = 0.1 IR
50 ns If = 500 rnA, Ir = 50 rnA
RL = 1000, Irr = 5.0 rnA
NOTES:
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation
3. VF is measured using an 8 rna pulse.
4. See test circuits (Note 6) for measurement of reverse current of an individual diode.
5. The capacilance is measured from pin-to-pin across anyone of the diodes. The interaction of other diodes is therefore included in the measured value.
6. For product family characteristic curves and test circuits refer to Chapter 4. 016 .

• 16·DIODE CORE DRIVER MATRIX

3-36
 FAIRCHILD • DIODE ARRAYS

FSA2501M. FSA2501P FSA2502M

•
14O--+----+-'--+-~-+----+---'

See Package Outlines

TO-116-2 (Ceramic) FSA2501M

TO-116 (Plastic) FSA2501P See Package Outline TO-96

To-a5 OUTLINE TO-116-2 OUTLINE

r- 785(19939)------1
I A (\ 750(1905) A A I
~; 10~-+~
I

··'L
.•,91.483>
.2'01.8.101

-,--- ~5__________.,. ________I.~ 1~ !~I__ LI

.370 (9.39) I- -I I I .370 (9.39)

.250 (S.35)r---1 ~ .250 (e.35)

~L
.006 (152)
.0351..8891
TYP.
I--- .... 1.6.601
.240 (6.10!
--j t
01510.216)
.004 (,092) .075 (0.191)

NOTES: (.940)
Alloy 42 leads, tin plated (.686)
STANDOFF
Gold plated leads available WIDTH
Hermetically sealed ceramic package
Dot or tab indicates lead 1
Package weight is 0.26 gram NOTES:
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300' (7.620) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Board-drilling dimensions should equal
your practice for .020' (0.508) diameter
pin
Package weight is 2.0 grams

3-37
 FAIRCHILD- DIODE ARRAYS

TO-96 OUTLINE TO-116 OUTLINE

:~~: !~:~;I_I->~-=~-=-=-=-=-=-;~~:=~~~X :~:~~;I

.D2I (0.64)
.G201051~
.no119561
.040 ~~~ 30'! .012(030)

~
:iiiiilll.2Ol
(1.016~fI];~;;:;;;;;;;:CU:=:'-'.....,.
MAX.
,-...
T 0 -
7 10
.1M5 (114)
R. .D35 (0 89) 1° .11012.80)
10 LEADS .210 16.60) - - . C l I O 12 291
.020 (0.511
.01810.411 L
.240 (B.10) .GIS (216)
.07511901
.G5O (1.27)
14 _11 021

r
DIA.

.230 (5.8421--t---~
T.P. .116 (2.9211
T.P. ~ h L
GLASS :::m~: ~::: :~;~: ~ .020 10.511

.ZOO I:1/:::'-=--,:::r-=-.'<-.=r-.=r-.=,j~"71 M ~,,~,

L
\ ' 0 MAX. NDM.
360 10)(/""","-,--,,,,,, BEAnNG j ---L
T.P. 0~~ 8
V INSULATING STANDDFF-
SHAPE MAY VARY PLANE ~. .011 10.281
.001 <0.23)
.g;; 11 '4 31 .15013.811..::r--' , ~~ I ~
·g~a ~Ttl
. ( I
. (07371 '.100 12.541.110 12.80) I
.ClIO 12.291 -J--I
I
r- .020 10.511
.018 10.411
I--- .375 19.521
NDM•
TYP. STANDOff' .03710.941
WIDTH .G2110.691

NOTES: NOTES:
Kovar leads, gold plated Alloy 42 pins. tin plated
Hermetically sealed package Gold plated pins available
Package weight is 1.32 grams Transfer moulded OM-6B plastic package
Pins are intended for insertion in hole rows
on .300' (7.62) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Board drilling dimensions should equal
your practice for .020 (0.506) inch
diameter pin
Package weight is 0.9 gram

3-38
 FSA2503M· FSA2503p· FSA2504M
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRAYS

• c ... 5.0 pF (MAX)

• IlF ... 15 mV (MAX)@ 10 mA

ABSOLUTE MAXIMUM RATINGS (Note 1) CONNECTION DIAGRAM

Temperatures

•
Storage Temperature Range (M Suffix) -55°C to +200°C
(P Suffix) -55°C to + 150°C
Maximum Junction Operating Temperature +150°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Dissipation per Junction at 25°C Ambient 400mW
Maximum Dissipation per Package"at 25°C Ambient 650mW
14
Linear Derating Factor (from 25°C) Junction 3.2 mW/oC
Package 5.2 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 50V See Package Outlines
IF Continuous Forward Current 350 mA TO-116-2 (Ceramic) FSA 2503M
if (surge) Peak Forward Surge Current TO-116 (Plastic) FSA 2503P
Pulse Width=1.0 s 1.0 A TO-86 FSA 2504M
Pulse Width=1.0!Ls 2.0A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 10 !LA
VF Forward Voltage (Note 3) 1.0 V IF = 100 mA
1.1 V IF = 200 mA
1.5 V IF = 500 mA
IlVF Forward Voltage Match (Note 6) 15 mV IF = 10 mA
IR Reverse Current (Note 4) 100 nA VR = 50 V
200 /LA VR = 50 V, TA = 125°C
C Capacitance (Note 5) 5.0 pF VR = 0, f=1.0 MHz
tfr Forward Recovery Time (Note 6) 40 ns If = 500 mA
trr Reverse Recovery Time (Note 8) 10 ns If = Ir = 10 mA to 200 mA
RL = 100 G, Irr = 0.1 IR
50 ns If = 500 mA, Ir = 50 mA
RL = 100 G, Irr = 5.0 mA
NOTES:
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. VF is measured using an 8 rna pulse.
4. See test circuits (Note 6) for measurement of reverse current of an individual diode.
5. The capacitance is measured from pin-to-pin across anyone of the diodes. The interaction of other diodes is therefore included in the measured value.
6. For product family characteristics and test circuits, refer to Chapter 4. 015.

'DUAL 8-DIODE CORE DRIVER MATRIX

3-39
 FAIRCHILD • DIODE ARRAYS

To.-116-2 OUTLINE To-a6 OUTLINE

r--- ~:g 119 9391-----j

I A A:' (1905) t A A I

1-
t
.019 10.4831
.01510.3S11
TYP. F====*~ir-l!~~==========~---.L
.006 (0.152)
.004 10.1021

k,===~~:=§~~¢t
I .26016.6041 I
.02510.6351 1'-.24016.0961--1 .06511.6511
TYP. ,060 (1.270)

.110
.090 NOTES:
~ ~ Alloy 42 leads, tin plated
(2.286) (.686)
TYP. STANDOFF Gold plated leads available
WIDTH Hermetically sealed ceramic package
Dot or tab indicates lead 1
NOTES: Package weight is 0.27 gram
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300" (7.620) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Board-drilling dimensions should equal
your practice for .020' (0.508) diameter
pin
Package weight is 2.0 grams

TO-116 OUTLINE

.02510.641

'770(1956)~ .D2G(O.51~
~~ 30~ ~0.301 NOTES:

~
.ooe 10201 Alloy 42 pins, tin plated
1- 7
04S II 141
10R':635 10891 0 .11012801
Gold plated pins available
Transfer moulded OM-6B plastic package
::: :L::~l 0 .GIS 12 161 -
.075 (I 901 14
::~ ~:
.G4O 11 021
Pins are Intended for insertion in hole rows
on .300' (7.62) centers

~ h
I I
.D7O 11.781
L They are purpose'ly shipped with
"positive" misalignment to facilitate
insertion
~ ~~ ~ Board drilling dimensions should equal

-:;i.~
t~.
.04511.141

0;:;"R==f1-
.210 7.37 _ ---.i:"::~:~:~~:

~
your practice for .020 (0.508) inch

...."-,,,.,, ,., ....

diameter pin

:::~~~
•

~ JL...J!Q.
012 I I
~
I
·09Ori~.291
I : Jl
STANDOFF .03710.941
--II-
-t
II 'oao10.511
.01.10.41)
II-- .37519.521 ---II
NOM.
~:~~;:
WIDTH .02710.891

3-40
 FSA2509M-FSA2509P-FSA2510M-FSA2510P
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRAYS·

• c ... 5.0 pF (MAX) CONNECTION DIAGRAM 5

• AVF ... 15 mV (MAX)@ 10 rnA
FSA2509M • FSA2509P
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature Range (M Suffix) -55°C to +200°C w.~
(P Suffix) -55°C to +150°C
ITflllTI
•
Maximum Junction Operating Temperature +150°C
Lead Temperature +260°C
Package Outlines
Power Dissipation (Note 2) TO·116·2 (Ceramic) FSA2509M
Maximum Dissipation per Junction at 25°C Ambient 400mW TO·116 (Plastic) FSA2509P
Maximum Dissipation per Package at 25°C Ambient 650mW
Linear Derating factor (from 25 ° C) Junction 3.2 mW/oC
Package 5.2 mW/oC FSA2510M • FSA2510P

]11ilfB
Maximum Voltage and Currents
WIV Working Inverse Voltage 40 V
IF Continuous Forward Current 350 rnA
if(surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
14 .
Pulse Width = 1.0 itS 2.0 A
See Package Outlines
TO·116·2 (Ceramic) FSA2510M
TO·116 (Plastic) FSA2510P

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 10l'A
VF Forward Voltage (Note 3) 1.0 V IF = 100 mA
1.1 V IF = 200 mA
1.3 V IF = 500 mA
AVF Forward Voltage Match (Note 6) 15 mV IF = 10 mA
IR Reverse Current (Note 4) 100 nA VR = 40 V
200 I'A VR = 40 V, TA = 150°C
C CapaCitance (Note 5) 5.0 pF VR = 0, f = 1.0 MHz
tfr Forward Recovery Time (Note 6) 40 ns If = 500 mA
trr Reverse Recovery Time (Note 6) 10 ns If = Ir = 10 mA to 200 mA
RL = 100!l, Irr = 0.1 IR
50 ns If = 500 mA, Ir = 50 mA
RL = 100!l, Irr = 5.0 mA
NOTES:
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on application. Involving pulsed or low duty~cycle operation.
3. VF Is measured using an 8 rna pulse.
4. See test circuits (Note 8) for measurement of reverse current of an individual diode.
5. The capacitance Is measured from pln-to-pln acr088 anyone of the diodes. The interaction of other diodes Is therefore included in the measured value.
6. For product family characteristic curves and test circuits, refer to Chapter 4,015.

'DUAL a·DIODE AND 16·DIODE CORE DRIVER MATRICES

3-41
 FAIRCHILD. DIODE ARRAYS

TO-116-2 OUTLINE

r-----.~:g {l9 9391------j

IA A I' (1905) I A A I
NOTES:
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300' (7.620) centers
They are purposely shipped with
'positive" misalignment to facilitate
insertion
Board-drilling dimensions should equal
your practice for .020' (O.50B) diameter
pin
Package weight is 2.0 grams

~
(.686)
STANDOFF
WIDTH

TO-116 OUTLINE

.025 (0.64)
'020(051~
.770 (19 56)
~:t4ifiT880I~ 300 .0'210.301 NOTES:

~
:iiijj"ljj:2OJ
Alloy 42 pins, tin plated
!
.280(6601 0
7 1 0
.045 (1 :141
R'. 035 (0891
Gold plated pins available
,0
- .110 (2 80)
Transfer moulded OM-BB plastiC package
,090(229)

L
.240 (6 10)
8
.085 (2 16)
.075 (1 901 14
Pins are intended for insertion in hole rows
.050 (1 271
.040 i1 02)
on .300' (7.62) centers
They are purposely shipped with

~h
.065 ( 1 . 6 5 ) '
:ii45Tf141
0701.781
~ .310 (7.87) ~
.290 17.37)
L .020 10.51)
"positive" misalignment to facilitate
insertion
Board drilling dimensions should equal
your practice for .020 (0.50B) inch
'~
.20015.081~.0'510.381Pr_.-..r·0.01O.251 I diameter pin

Jl
MAX. . NOM. Package weight is 0.9 gram
SEATING j --..l..
PLANE " -------r .011 10.281
.009 (0.23)
.150 (3.811-=r-- '
~ I- .0.610:4.) I--
I

.100 (2.54)
.11012.801
.090"';~.29)
H STANDOFF.G37 10.94)
.020 (0511
.375 19.521
NOM.
---I
WIDTH .027 (0.69)

3-42
 FSA2563M • FSA2563P • FSA2564M • FSA2564P
FSA2565M • FSA2565P • FSA2566M • FSA2566P
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRAYS

• c ... 3.0 pf (max) CONNECTION DIAGRAMS

• VF ... 15 mV (max) @ 10 mA FSA2563
a-Diode Common-Cathode
ABSOLUTE MAXIMUM RATINGS (Note 1) 6 5 4 3
Temperatures
lliL
•
Storage Temperature Range (M Suffix) -55°C to +200°C

Power Dissipation (Note 2)

(P Suffix)
Maximum Junction Operating Temperature
Lead Temperature
-55°C to +150°C
+150°C
+260°C *-*-+-+110 11
See Package Outlines
12 14

Maximum Dissipation per Junction at 25°C Ambient 400mW TO·116·2 (Ceramic) FSA2563M
Maximum Dissipation per Package at 25°C Ambient 650 mW TO'116 (Plastic) FSA2563P
Linear Derating Factor (from 25°C) Junction 3.2 mW/oC
Package 5.2 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 40 V
IF Continuous Forward Current 350 rnA
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 ILS 2.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 10!,A
VF Forward Voltage (Note 3) 1.0 V IF = 100 rnA
1.1 V IF = 200 mA
1.3 V IF = 500 mA
IR Reverse Current (Note 4) 100 nA VR = 40 V
100 !,A VR = 40 V, TA = 125°C
C Capacitance (Note 5) 3 pF VR = a v, f = 1 MHz
VFM Peak Forward Voltage (Note 6) 4 V IF = 500 mA
tfr Forward Recovery Time (Note 6) 40 ns If = 500 mA
trr Reverse Recovery Time (Note 6) 10 ns If = Ir = 10 mA to 200 mA
RL = lOOn, Irr = 0.1 Ir
50 ns If = 500 mA, Ir = 50 rnA
RL = lOon, Irr = 5 mA
tJ.VF Forward Voltage Match (Note 6) 15 mV IF = 10 mA
NOTES,
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. VF is measured using an 8 its pulse.
4. See test circuits (Note 6) for measurement of reverse current of an individual diode.
5. The capacitance is measured from pin-la-pin across anyone of the diodes. The interaction of other diodes is therefore included in the measured value.
6. For product family characteristic curves and test circuits, refer to Chapter 4, D15.

'COMMON ANODE, COMMON CATHODE

3-43
 FAIRCHILD. DIODE ARRAYS

FSA2564 FSA2565 FSA2566

B-Dlode Common-Anode 13-Dlode Common-Cathode 13-Dlode Common-Anode

4 3 4 3

WIn 10 11 12 14
~~lllllf 10 11 12 13 14

See Package Outlines See Package Outlines See Package Outlines

TO-116-2 (Ceramic) FSA2564M 66 (Ceramic DIP) FSA2565M 66 (Ceramic DIP) FSA2566M
TO-116 (Plastic) FSA2564P 96 (Plastic DIP) FSA2565P 96 (Plastic DIP) FSA2566P

TO-116-2 OUTLINE

r--- 786/199391-----j
760
I A A 1 (1905) I A A I
NOTES:
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300' (7.620) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Board·drilling dimensions should equal
your practice for .020" (0.508) diameter
pin
Package weight is 2.0 grams
,110
.090
~ (.940)
(2286) (.686)
TYP. STANDOFF
WIDTH

TO-116 OUTLINE

.025 (0.64)

I - - - - :74OTi6601
770(1956)~ .020(051~
3D~ dJo NOTES:
301

~
~-.008 '0 201 Alloy 42 pins, tin plated
-.-- 045 11 14> Gold plated pins available
I 1 ° "':035 '0891 ,0 .11012801 Transfer moulded DM·6B plastic package
:~~ i:~~;
1 0 085 (2 16)
.07511 901 14
- :::;~ ~~:
.040 11 021
Pins are intended for insertion in hole rows
on .300' (7.62) centers
-

rl h
. .070 {1.7a}
L They are purposely shipped with
"positive" misalignment to f.acilitate
insertion
.08511.651 . ~ .310 '.7.871 ~ Board drilling dimensions should equal
.04511.141 .290 '7.371 -.I :~~~ :g~i: your practice for .020 (0.508) inch
!I~O~' .D:.s~~381A=~
.2':~i081.
=, diameter pin

Il
Package weight is 0.9 gram
SEATING I --.l '\1
PLANE " --r \ .011 10.281
.009 (0.23)
~150(3,81}~' II I I
H
I

.100 (2.54) .110 (2.80) I - j f- .g~~ :g.~~~ f-- .375 (9.52) ~

.090 (2.29) •. NOM.
TYP. STANDOFF .037 (0.94)
WIDTH .027 (O.59)

3-44
 FAIRCHILD. DIODE ARRAYS

68 OUTLINE 98 OUTLINE

'c:::t
.OZSIO,63S1
'020(O'608I~
7(10(19304)
~'740(IB796J~

:~C:::::r-'
30°.012(0.3061

". """
240(6098)
I
-L-
9 16
::891
.071
~o':::'~:~'
. 1 1 1 4 3 I R : 0 8 O lI288}

16
.010(1.2701
.040 (1.0161

l
11.065116511 ~- (2.159)
-l I- 045 II 143) ll905J
065(1661) II I .02&108361
045(1143) ~ f. ...j NOM.

T,-------..,
20~Zx0801F;=;:=Fi=ri=FR=;=r"R""Fffi

•
10012~401t-
""",or ....
.011

110(27941
T~9~122861
...
.037
.027
(0.9401
~~.018(04061
.020(05081 ~ 3~:.~~~. -l :g ~~ru
(0886)
ST:~~fF

NOTES:
Alloy 42 pins, tin plated NOTES:
Gold plated pins available Alloy 42 pins, tin plated
Hermetically sealed ceramic package Gold plated pins available
Pins are intended for insertion in hole rows Transfer moulded OM·6B plastic package
on .300" centers (7.62) Pins are intended for insertion in hole rows
They are purposely shipped with on .300" (7.62) centers
"positive" misalignment to facilitate Leads purposely have a "positive"
insertion misalignment to facilitate insertion
Board·drilling dimensions should equal Board·drilling dimensions should equal
your practice for .020 inch diameter pin your practice for .020 inch (0.51)
(0.51) diameter pin
Package weight is 2.0 grams ' •• The .037-.027 (0.94-0.69)
'The .037-.027 dimension does not apply dimension does not apply to the corner
to the corner pins pins

3-45
 FSA2619M·FSA2619p·FSA2620M·FSA2620P
FSA2621M·FSA2719M·FSA2719p·FSA2720M
FSA2720p·FSA2721M
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRAYS

• c ... 2.0 pF (MAX) FSA2719 Series

• I:;.VF ... 15 mV (MAX)@ 10 mA CONNECTION DIAGRAMS
FSA2619. FSA2719
ABSOLUTE MAXIMUM RATINGS (Notes,l and 5)
Temperatures 8785432

ffffffff
Storage Temperature Range (M Suffix) , -55° C to +200° C
(P Suffix) -55° C to +150° C
Maximum Junction Operating Temperature , +150° C
Lead Temperature +260° C 9 10 11 12 13 14 15 16
Power Dissipation (Note 2)
Maximum Dissipation per Junction at 25° C Ambient 400mW See Package Outlines
Maximum Dissipation per Package at 25° C Ambient 650mW 6B (Ceramic [lIP) FSA2619M
Linear Derating factor (from 25 ° C) Junction 3.2 mW/oC FSA2719M
Package 5.2 mW/oC 9B (Plastic DIP) FSA2619P
FSA2719P
Maximum Voltage and Currents
WIV Working Inverse Voltage FSA2619 (Note 5) 75 V
FSA2719 50 V
IF Continuous Forward Current 350 mA
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
, Pulse Width ~ 1.0!Ls 2.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage (Note 5) FSA2719 75 V IR = 5.0/LA
FSA2619 100 V IR = 100 /LA
IR Reverse Current FSA2619 5.0 /LA VR = 75 V
25 nA VR = 20 V
50 /LA VR=20V,TA= 150°C
FSA2719 100 nA VR = 50 V
100 /LA VR=50V,TA= 150°C
VF Forward Voltage (Note 3) 1.0 V IF = 10 rnA
Irr Reverse Recovery Time (Nole 6) FSA2619 5.0 ns If = Ir = 10 rnA, Irr = 1.0 rnA
FSA2719 6.0 ns If = Ir = 10 rnA, Irr = 1.0 rnA
C Capacitance (Note 6) FSA2619 4.0 pF VR = a
FSA2719 2.0 pF VR = a
I:;.VF Forward Voltage Match (Note 6) 15 mV IF = 10 rnA
tfr Forward Recovery Time (Note 6) FSA2619 20 ns 50 rnA Peak square wave,
0.1 /LS Pulse Width, 5.0 kHz - 100 kHz
VFM Peak Forward Voltage (Note 6) FSA2719 3.0 V IF = 100 rnA, t r :$ 10 ns
RE Rectification Efficiency 45 % VI = 2 V rms, I = 100 MHz
NOTES,
/. These ratings are limiting values above which life or satisfactory" performance may be impaired.
2. These are steady state limits. The factory should be consulted or applications involving pulsed or low duty-cycle operation.
3. VF is measured using an 8 rns pulse.
4. See test circuits (Note 6) for measurement of reverse current of an Individual diode.
5. FSA2619 denotes series FSA2619M/P. FSA2620M/P and FSA2621M;
FSA2719 denotes series FSA2719M/P. FSA2720M/P and FSA2721M.
6. For product family characteristics curves and test Circuits. refer to Chapter 4.015.

'UNCONNECTED
3-46
 FAIRCHILD. DIODE ARRA VS

FSA2620. FSA2621
TO-S6 OUTLINE FSA2720. FSA2721

NOTES: 765432

fffffff
Alloy 42 leads, tin plated
Gold plated leads available
~ Hermetically sealed ceramic
package
t Dot or tab indicates lead 1 a 9 10 11 12 13 14
.019(0.4831
.016 (0.3811 ~~~~~~a-I~~~~~~----.-t. Package weight is 0.27 gram
TYP.
See Package Outlines
.008(0.1521
.004 (0.102) TO-116-2 (Ceramic) FSA2620M

kt=======E~:::§~~~ TO-116 (Plastic)

FSA2720M
FSA2620P
I I f

•
.280 (6.6041
.025 (0.635) r.240 (6.096) --j .065 (1651) FSA2720P
TYP. .050 (1 270)
TO-a6 FSA2621 M
FSA2721M

68 OUTLINE 98 OUTLINE

r---- 785 11 9 9 3 9 1 - - 1 .021 {O.6361

'020(O.508)~
If'.. A (17551191771(\ A 111 710( 19304)
~:740(18796)~

::~I: ::::::["'''''
• .012(03061

I I .065 11651J
-l 1--04511143)
=B:::::::I:~i~ II
.0155 (1 651)
.046(1143)..j f--
I l.O2&(0835)
~ NOM.

NOTES:
Alloy 42 pins, tin plated NOTES:
Gold plated pins available Alloy 42 pins, tin plated
Hermetically sealed ceramic package Gold plated pins available
Pins are intended for insertion in hole rows Transfer moulded OM-SB plastic package
on .300" centers (7.62) Pins are intended for insertion in hole rows
They are purposely shipped with on .300" (7.62) centers
"positive" misalignment to facilitate Leads purposely have a "positive"
insertion misalignment to facilitate insertion
Board-drilling dimensions should equal Board·drilling dimensions should equal
your practice for .020 inch diameter pin your practice for .020 inch (0.51)
(0.51) diameter pin
Package weight is 2.0 grams "'The .037-.027 (0.94-0.69)
'The .037-.027 dimension does not apply dimension does not apply to the corner
to the corner pins pins

3-47
 FAIRCHILD • ZENER DIODES

TO-116 OUTLINE

.025 (0.64)
.020(O.51~
r - - . 7 7 0 ( 1 9 . 5 6 ) _ _ _~1
I A A r" .740 <18.801
IR-:~~ :6;F:;~10-:~~.:~~~~801 ~~~~E~!!~S~i~i~ ~~~ti~adble
I

I
.260 16.801 .090 12.291 Transfer moulded OM·6B plastic package
.240 (6.10) .085 (2.16) .050 (1.27) Pins are intended for insertion in hole rows
Lb;~=r==r=;=;=;="T'rrr"T''Tf~ .07.<1.901 14 .040<1.021 on .300' (7.62) centers

~ h .080 (2.03)
.070 (178)
L 310 (7 a7)
They are purposely shipped with
"posi~ive" misalignment to facilitate
Insertion
~ ~:29O (7 371 ~
.020 (0 51) Board drilling dimensions should equal
. R_,~·01010251 your practice for .020 (0.508) lOch
t~-. 01.'0381 _. - -, diameter pm
.2O:~i~8) NOM. Package weight is 0.9 gram
I -.l \'
SEATING

PLANE

.150 (381) y - -
" IL II
------r
I
\
I
.01110281
009 (Q 23)

.100(2541. 110 {2801 I I __11__ ,020(051) f.-.37S(9521----j

.090(2.29}---f------1 I .016 (Q411 NOM.
TYP. STANDOFF .037 <0.94)
WIDTH .027 (0.691

TO-116-2 OUTLINE

r----
I (\ A
785(19939)~
750(1905) I A A I
NOTES:
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300" (7.620) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Board·drilling dimensions should equal
your practice for .020' (0.508) diameter
pin
Package weight is 2.0 grams

( 940)
~
STANDOFF
WIDTH

3-48
 FSA2702M-FSA2703M-FSA2704M-FSA2705M
PLANAR AIR-ISOLATED MONOLITHIC DIODE BRIDGE ARRAYS

• aVF ... 3 mV (MAX) FSA2702M, FSA2703M

• aiR ... 1 !J,A (MAX) FSA2702M, FSA2703M CONNECTION DIAGRAM

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -55°C to +200°C
Maximum Junction Operating Temperature 175°C
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Dissipation 500mW
Linear Derating Factor (from 25°C) 3.33 mW/oC
3

Maximum Voltage and Currents

WIV Working Inverse Voltage 40 V
IF Continuous Forward Current 300 mA
if Recurrent Peak Forward Current 600 mA See Package Outlines
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A TO-33 FSA2702M,
Pulse Width = 1.0!J,s 4.0 A FSA2704M
TO-72 FSA2703M,
FSA2705M

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 100!J,A
IR Reverse Current (Note 4) 100 nA VR = 40 V
100 !J,A VR=40 V, TA = 150·C
C Capacitance (Note 5) 4.0 pF VR = 0
VF Forward Voltage (Note 3) 1.000 V IF = 200 mA
.920 V IF = 100 mA
.850 V IF = 50 mA
.780 V IF = 20 mA
.740 V IF = 10 mA
.700 V IF = 5.0 mA
.650 V IF = 2.0 mA
.620 V IF = 1.0 mA
trr Reverse Recovery Time (Note 6) 6.0 ns If = Ir = 10 mA, Irr = 1.0 mA
8.0 ns If = Ir = 200 mA, Irr = 20 mA
aVf Forward Voltage Match (Note 6)
FSA2702,FSA2703 3.0 mV IF = 10!J,A to 10 mA
TA = -55°C to +100°C
aiR Reverse Current Match (Note 6)
FSA2702, FSA2703 1.0 !J,A VR = 10 V, TA = -55°C to +100°C
NOTES:
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly-cycle operation.
3. VF is measured using an 8 ma pulse.
4. See test circuits (Note 6) for measurement of reverse current of an individual diode.
5. The capacitance is measured from pin-Io-pin across anyone of the diodes. The interaction of other diodes is therefore included in the measured value.
6. For product family characteristic curves and test circuits, refer to Chapter 4, 015.

3-49
 FAIRCHILD- DIODE ARRAYS

JEDEC TO-33 OUTLINE TO-72 OUTLINE

~====-iI :~~~ i~:g~~ CIA.

:~g~ i~:~6: DIA·tl .230 (5.84)
"9:'(495)Fl~
.17 (4.52)OIA.
OIA .
.030(0.76) lill.26016.60)

:~:~~ T' ffi;t'0) .030 (0,7629,,210 (5.33)

MAX1.
SEATING,
PLANE t
i.170 (4.32)

~ n n (3~:1) MIN. ~ ~ ~
.0194(~~~~:I; U
.01610,41) .
U U~
4 LEA. OS
.g19 (0483)
. 16 (OA06)
CIA.
.500 (12.70)
I
----.i.
MIN .

GLASS

LEAD NO.1 LEAD NO.3

'-' - GLASS

46° T.P. Y LEAD NO.4

g;:!1 n ~L&;: 1122\

. (0. 1 ) . (0.71)

NOTES: NOTES:
Kovar leads, gold plated Kovar leads, gold plated
Hermetically sealed package Hermetically sealed package
Package weight Is 1.22 grams Package weight is 0.36 gram

3-50
 RF400·RF401
AFC DIODES
SILICON PLANAR EPITAXIAL

• C3 /C20··· 2.O (MIN) 00-35 OUTLINE

• Q ... 350 (MIN)

ABSOLUTE MAXIMUM RATINGS (Note 1) ~-I

Temperatures
Storage Temperature Range -65°C to +200°C
~2~.40)MIN
II
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

+175°C
+260°C
i 0.180 (4.57)
0.140 (3.58)
Maximum Total Power Dissipation at 2.5°C Ambient

I~IJ~" .
350 rnW
Linear Power Derating Factor 2.33 rnW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 30 V
IF Continuous Forward Current 250 rnA

0.021 (O~~ DIA

0.019 (0.483)

0060 (152)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 35 V IR = lO;<A
IR Reverse Current 3.0 30 nA VR = 30 V
5.0 50 ;<A VR=30V,TA= 150°C
Q Figure 01 Merit 350 VR = 4.0 V, f = 50 MHz
C Capacitance RF400 10 pF VR = 4.0 V, 1 = 1 MHz
RF401 7.0 pF VR = 4.0 V 1 = 1 MHz

CO.1 /C 4 Capacitance Ratio 2.0 VR = 0.1V (CO. 1), VR =

4.0 V (C4), f = 1 MHz

C3 /C 20 Capacitance Ratio 2.0 VR = 3.0 V (C3), VR = 20 V

(C20), 1 = 1 MHz
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 08.

3-51
 RF500
DUAL FM VARACTOR
DIFFUSED SILICON PLANAR DIODE

• C ... 38-42 pF TO-92 OUTLINE

• Q ... 125 (MIN)

r 1
210c-g
oZ05 (5 20)
ABSOLUTE MAXIMUM RATINGS (Note 1) .175 (445)
DIA.

Temperatures
Storage Temperature Range -55°C to + 150°C
Maximum Junction Operating Temperature +150°C .170 (432)

Lead Temperature +260°C I SEATING

~ PLANE

Power Dissipation (Note 2) .500 (12.70)

MIN. n ~ ~-3lEAOS
.019 (OAS3)
Maximum Total Power Dissipation at 25°C Ambient 280mW ~U .Ol~:~~06)
Linear Power Derating Factor 2.24 mW/oC _.135 (3 43)
MIN .
. 100 (2 54)
Maximum Voltage and Currents T.P.

WIV Working Inverse Voltage 30 V

IF Continuous Forward Current 200 rnA

NOTES:
Copper leads, tin plated
Transfer moulded thermosetting plastic
package
Package weight is 0.25 gram
Pins 1 and 3 are anode conections and pin 2
is common cathode connection

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 35 V IR = 10"A
IR Reverse Current 5.0 50 nA VR = 30 V
50 500 nA VR = 30 V, TA = 60° C
C Capacitance 38 40 42 pF VR = 3 V, 1 = 1 MHz
C3/C30 Capacitance Ratio 2.5 2.65 2.8 VR = 3/30 V, f = 1 MHz
LS Series Inductance 6.0 nH 1 = 250 MHz, 1.5 "I'm leads
RD Dynamic Resistance 0.2 0.4 n VR@38pF,I=100MHz

Cc Case Capacitance 0.18 pF 1 = 1 MHz, 1.5 "I'm leads

TC c Capacitance Temperature Coefficient 280 400 ppm/oC
Q Figure 01 Merit 125 150 VR = 3 V, 1 = 100 MHz
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factor should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 09.

3-52
 ZPD3,3 - ZPD33
500 mW SILICON ZENER DIODES

ABSOLUTE MAXIMUM RATINGS (Note 1)

00-35 OUTLINE
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature
+175°C
+260°C ~-:r(25.40)MIN

Power Dissipation (Note 2)

i
•
Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor 3.3 mW/oC
0.180 (4,57)
0.140 (3.56)

0.021 (0.533) DIA

O.OHI (0.483)

NOTES:
Il(_".". 0060 (1 52)

Copper clad steel leads, tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise listed)

SYMBOL Vz Zz VR IZM TC
Zener Voltage Max Zener Impedance Minimum Maximum Temperature
Characteristic @IZ= 5 rnA IZ = 5 rnA IZ = 1 rnA Reverse Voltage Zener Current Coellicient 01 Vz
MIN NOM MAX 1 = 1 kHz 1 = 1 kHz @IR = 100 nA 25°C 45°C MIN MAX
UNIT V V V Q Q V rnA rnA %/OC %/OC

ZPD3,3 3.1 3.3 3.5 90 500 - 130 109 -0.080 -0.030

ZPD3,6 3.4 3.6 3.8 90 500 - 120 101 -0.080 -0.030
ZPD3,9 3.7 3.9 4.1 90 500 - 110 92 -0.070 -0.030
ZPD4,3 4.0 4.3 4.6 90 500 - 100 85 -0.060 -0.010
ZPD4,7 4.4 4.7 5.0 78 500 - 90 76 -0.050 +0.020
ZPD5,1 4.8 5.1 5.4 60 480 0.8 80 67 -0.030 +0.040
ZPD5,6 5.2 5.6 6.0 40 400 1.0 70 59 -0.020 +0.060
ZPD6,2 5.8 6.2 6.6 10 200 2.0 64 54 -0.010 +0.070
ZPD6,8 6.4 6.8 7.2 8.0 150 3.0 58 49 +0.020 +0.070
ZPD7,5 7.0 7.5 7.9 7.0 50 5.0 53 44 +0.030 +0.070
ZPD8,2 7.7 8.2 8.7 7.0 50 6.0 47 40 +0.040 +0.070
ZPD9,1 8.5 9.1 9.6 10 50 7.0 43 36 +0.050 +0.080
ZPD10 9.4 10.0 10.6 15 70 7.5 40 33 +0.050 +0.080
ZPDll 10.4 11.0 11.6 20 70 8.5 36 30 +0.050 +0.090
ZPD12 11.4 12.0 12.7 20 90 9.0 32 28 +0.060 +0.090
ZPD13 12.4 13.0 14.1 25 110 10.0 29 25 +0.070 +0.090
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. VF = 1.0 V (max) @IF ::: 100 rnA for all types.
4. For product family characteristic curves, refer to Chapter 4. 013.

3-53
 FAIRCHILD. ZPD SERIES

ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise listed)

SYMBOL Vz Zz VR IZM TC

Zener Voltage Max Zener Impedance Minimum Maximum Temperature

Characteristic @IZ = 5 mA IZ = 5 mA IZ = 1 mA Reverse Voltage Zener Current Coefficient of Vz
MIN NOM MAX f = 1 kHz f = 1 kHz @IR = 100 nA 25°C 45°C MIN MAX

UNIT V V V n n V mA mA %/oC %/oC

ZPD15 13.8 15.0 15.6 30 110 11.0 27 23 +0.070 +0.090

ZPD16 15.3 16.0 17.1 40 170 12.0 24 20 +0.080 +0.095
ZPD18 16.8 18.0 19.1 50 170 14.0 21 18 +0.080 +0.095
ZPD20 18.8 20.0 21.2 50 220 15.0 20 17 +0.080 +0.100
ZPD22 20.8 22.0 23.3 55 220 17.0 18 16 +0.080 +0.100
ZPD24 22.8 24.0 25.6 80 220 18.0 16 13 +0.080 +0.100
ZPD27 25.1 27.0 28.9 80 250 20.0 14 12 +0.080 +0.100
ZPD30 28.0 30.0 32.0 80 250 22.5 13 10 +0.080 +0.100
ZPD33 31.0 33.0 35.0 80 250 25.0 12 9 +0.080 +0.100

3-54
 1N456/A·1N457/A·1N458/A·1N459/A
LOW LEAKAGE DIODES
DIFFUSED SILICON PLANAR

00-35 OUTLINE

• IR ... 25 nA (MAX) @ WIV

0; (25.40)MIN

i
• C. .6.0 pF (MAX)

•
ABSOLUTE MAXIMUM RATINGS (Note 1)
0.180 (4.57)
Temperatures 0.140 (3.56)

~J
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C

b[~.
Power Dissipation (Note 2)
Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor (From 25°C) 3.33 mW/oC
0.021 (0.533) DlA
0.019 (0.483)
Maximum Voltage and Currents 1N456/A 1N457/A 1N458/A 1N459/A
0060(152)
WIV Working Inverse Voltage 25 V 60 V 125 V 175 V
10 Average Rectified Current 200 rnA
NOTES:
IF Continuous Forward Current 500 rnA
Copper clad steel leads, tin plated
if Peak Repetitive Forward Current 600 rnA Gold plated leads available
if(surge) Peak Forward Surge Current Hermetically sealed glass package
Pulse Width = 1 /1S 4.0 A Package weight is 0.14 gram
Pulse Width = 1 s 1.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1N456A/7A/8A/9A 1.0 V IF = 100 rnA
1N456 1.0 V IF = 40 rnA
1N457 1.0 V IF = 20 rnA
1N458 1.0 V IF = 7 rnA
1N459 1.0 V IF = 3 rnA
IR Reverse Current 25 nA VR = Rated WIV
5.0 /1 A VR = Rated WIV, TA = 150'C
BV Breakdown Voltage 1N456/A 30 V IR = 100 IlA
1N457/A 70 V IR = 100llA
1N458/A 150 V IR = 100llA
1N459/A 200 V IR = 100llA
C Capacitance 6.0 pF VR = 0, f = 1 MHz
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 02.

3-55
 IN461 A ·IN462A ·IN463A ·IN464A
GENERAL PURPOSE, HIGH CONDUCTANCE DIODES
DIFFUSED SILICON PLANAR

• VF ... 1.0 V (MAX)@ 100 mA

00-35 OUTLINE
• IR ... 500 nA (MAX)@WIV

~-:r
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures (25.40)MIN
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
+175°C
+260°C

500mW
i0.180 (4.57)
0.140 (3.56)

liIJ~"., ~
Linear Power Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents IN461A IN462A IN463A IN464A

WIV Working Inverse Voltage 25 V 60 V 175 V 125 V
10 Average Rectified Current 200 mA 200 mA 200 mA 200 mA
IF Continuous Forward Current 500 mA 500 mA 500 mA 500 mA
0.021 (0.533) DIA
if Peak Repetitive Forward Current 600 mA 600 mA 600 mA 600 mA 0.019 (0.463)
if(surge) Peak Forward Surge Current 0060 (152)
Pulse Width 1s = 1.0 A 1.0 A 1.0 A 1.0 A
Pulse Width 1 fJ.S = 4.0 A 4.0 A 4.0 A 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.0 V If = 100 mA

'R Reverse Current 500 nA VR = Rated WIV

30 /lA VR = Rated WIV, TA = 150°C
BV Breakdown Voltage IN461A 30 V 'R = 100/lA
IN462A 70 V 'R = 100 /lA
IN463A 200 V 'R = 100/lA
IN464A 150 V 'R = 100/lA
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 02.

3-56
 1N4828-1N4838-1N4848-1N4858-1N4868
GENERAL PURPOSE, LOW LEAKAGE DIODES
DIFFUSED SILICON PLANAR

00-35 OUTLINE

• VF ... 1.0 V (MAX) @ 100 mA

O~ (25.40)MIN

i
• IR ... 25 nA (MAX)@WIV

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (from 25°C)

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
-65°C to +200°C
+175°C
+260°C

500mW
•
Linear Power Derating Factor (from 25°C) 3.33 mW/oC
~~ (O,5~~1 CIA
Maximum Voltage and Currents IN482B IN483B IN484B IN485B IN486B 0.018 (O 4B3)

WIV Working Inverse Voltage 36 V 70 V 130 V 180 V 225 V

10 Average Rectified Current 200 mA
IF Continuous Forward Current 500 mA NOTES:
if Peak Repetitive Forward Copper clad stael lead •. lin plated
Current 600 mA Gold plated leada ava,lable
if(surge) Peak Forward Surge Current Hermetically sORled glOMS package
Package weight ia 0 14 IJfOm
Pulse Width = 1 s 1.0
Pulse Width = 1 fJ.S 4.0

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.0 V IF = 100 mA
IR Reverse Current 1N482B -1 N485B 25 nA VR = Rated WIV
5.0 !,A VR = Rated WIV, TA = 150°C
1N486B 50 nA VR = 225 V
10 !,A VR = 225 V, TA = 150°C
BV Breakdown Voltage 1N482B 40 V IR=100!,A
1N483B 80 V IR=100!,A
1N484B 150 V IR=100!,A
1N485B 200 V IR=100!,A
1N486B 250 V IR = 100!,A
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 02.

3-57
 1N625 through 1N629
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• VF ... 1.5 V (MAX)@4.0 mA

• IR ... 1.0 ItA (MAX) @ WIV 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o--:r(25.40)MIN

Maximum Operating Junction Temperature

Lead Temperatures

Power Dissipation (Notes 2)

Maximum Total Dissipation at 25°C Ambient
175°C
260°C

500mW
i
0.180 (4.67)
0.140 (3.56)

IlIJ~. .
Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents 1N625 1N626 1N627 1N628 1N629

WIV Working Inverse Voltage 20V 35V 75V 125V 175V
10 Average Rectified Current 175 mA 175 mA 175 mA 175 mA 175 mA
IF Forward Current Steady State 400 mA 400 mA 400 mA 400 mA 400 mA
if(surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A 1.0 A 1.0 A 1.0 A 1.0 A
0.Q21 (0.533) DIA
0.01' (0.483) "w
Pulse Width = 1.0!Ls 4.0A 4.0A 4.0 A 4.0 A 4.0 A 0.060 (152)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.5 V IF = 4.0 rnA
IR Reverse Current 1.0 ,.A VR = rated WIV
30 ,.A VR = rated WIV, TA = 100°C
BV Breakdown Voltage lN625 30 V IR = 100ILA
lN626 50 V IR = 100,.A
lN627 100 V IR = 100,.A
lN626 150 V IR = l00,.A
lN629 200 V IR=100,.A
trr Reverse Recovery Time 1.0 ILS If = 30 rnA, Vr = 35 V,
Recovery to 400 k!l
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. For product family characteristic curves, refer to Chapter 4, 01.

3-58
 1N658
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR EPITAXIAL

• BV ... 120V(MIN)@ 100~

00-35 OUTLINE
• VF ... 1.0 V (MAX)@ 100 mA

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Maximum Operating Junction Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Dissipation at 25°C Ambient
-65°C to +200°C
+175°C
+200°C

500mW
O----:!
i
(25.40)MIN

0.180 (4.57)
0.140 (3.56)
•
~IJ~". ,~
Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 100 V
10 Average Rectified Current 200 mA
IF Forward Current Steady State 500 mA
if(surge) Peak Forward Surge Current 0.021 (0.533) DIA
Pulse Width = 1.0 s 1.0 A 0.011 (0.483)

Pulse Width = 1.0!Ls 4.0A 0.060 (152)

NOTES:
Coppe~ clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambienl Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.0 V IF = tOO mA
IR Reverse Current 50 nA Vr = 50 V
25 /LA VR = 50 V, TA = 150°C
BV Breakdown Voltage 120 V IR = 100/LA
trr Reverse Recovery Time 300 ns VR = 40 V, If = 5.0 mA,
RL = 2.0 k!l, CL = 10 pF,
Recovery to 80 k!l
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory Aerformance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. For product family characteristic curves, refer to Chapter 4. 01.

3-59
 1N659·1N660·1N661
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• VF ... 1.0 V (MAX)@ 6.0 mA

00·35 OUTLINE
• I rr ... 300 ns (MAX)

D~
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures (25.40)MIN
Storage Temperature Range -65°C to +200°C
Maximum Operating Junction Temperature
Lead Temperature

Power Dissipation (Notes 2)

+ 175°C
+260°C
i0.180 (4.57)
0.140 (3.56)
Maximum Total Dissipation at 25°C Ambient 500mW
linear Derating Factor (from 25°C) 3.33 mW/oC
ho-J
W~"' '.
Maximum Voltage and Currents 1 N659 1N660 1N661
WIV Working Inverse Voltage 50 V 100 V 200 V
10 Average Rectified Current 200 mA 200 mA 200 mA
IF Forward Current Steady State 500 mA 500 mA 500 mA
0.021 (0.533) DIA
if(surge) Peak Forward Surge Current 0.019 (0.483)
Pulse Width 1.0 s = 1.0 A 1.0 A 1.0 A 0.060 (152)
Pulse Width = 1.0 fJ.S 4.0 A 4.0 A 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

1N659 1N660 1N661
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
VF Forward Voltage 1.0 1.0 1.0 V IF = 6.0 rnA
IR Reverse Current 5.0 fJ.A VR = 50 V
5.0 fJ.A VR = 100 V
10 fJ.A VR = 200 V
25 fJ.A VR = 50 V, TA = 100°C
50 fJ.A VR = 100 V, TA = 100°C
100 fJ.A VR = 200 V, TA = 100°C
BV Breakdown Voltage 60 120 240 V IR = 100 fJ.A
trr Reverse Recovery Time 300 300 300 ns Vr = 35 V, If = 30 rnA, RL = 2.0 kG,
CL = 10 pF, Recovery to 400 kG
NOTES:
1. The maximum ratings are Umlting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. For product family characteristic curves, refer to Chapter 4, 04 for 1N659. 4, 01 for 1N66D and 1N661.

3-60
 1N746 - 1N759
500 mW SILICON ZENER DIODES

ABSOLUTE MAXIMUM RATINGS (Note 1)

00-35 OUTLINE
Temperatures
Storage Temperature Range -65°C to +200°C

~~
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C
(25.40)MIN

i
•
Power Dissipation (Note 2)
Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC
0.180 (4.57)
0.140 (3.56)

0.021 (0.533) DIA

0.019 (0.483)

NOTES:
Ill J
="'""-
0060(152)

Copper clad steel leads. tin plated

Gold plated leads available
Hermetically sealed glass packago
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise noted)

SYMBOL Zz Vz IR TC
Maximum
Zener Nominal Maximum Reverse Typical
CHARACTERISTIC Impedance Zener Voltage Current (V R = 1.0V) Temperature
(Note 4) (Note 3) @25°C @150°C Coefficient
(I z = 20 mAl (lz = 20 mAl of Vz
UNIT Q V /LA /LA %/OC

IN746 28.0 3.3 10.0 30.0 -0.070

IN747 24.0 3.6 10.0 30.0 -0.065
IN748 23.0 3.9 10.0 30.0 -0.060
IN749 22.0 4.3 2.0 30.0 -0.055
IN750 19.0 4.7 2.0 30.0 -0.043
IN751 17.0 5.1 1.0 20.0 ±0.030
IN752 11.0 5.6 1.0 20.0 ±0.028
IN753 7.0 6.2 0.1 20.0 +0.045
IN754 5.0 6.8 0.1 20.0 +0.050
IN755 6.0 7.5 0.1 20.0 +0.058
IN756 8.0 8.2 0.1 20.0 +0.062
IN757 10.0 9.1 0.1 20.0 +0.068
IN758 17.0 10.0 0.1 20.0 +0.075
IN759 30.0 12.0 0.1 20.0 +0.077
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Type numbers without suffix have ± 10% tolerance on nominal Vz .
Type numbers with suffix A have ± 5% tolerance on nominal Vz .
4. The Zener impedance Zz is derived by superimposing a 60 Hz 2 mA (rms) signal on the 20 mA Iz test current.
5. For product famity characteristic curves, refer to Chapter 4,013.

3-61
 1N914/A/B-1N916/A/B-1N4148/9-1N4446-1N4449
HIGH CONDUCTANCE ULTRA FAST SWITCHING DIODES
DIFFUSED SILICON PLANAR

• t rr ... 4.0 na (MAX)

00-35 OUTLINE
• BV ... 100 V (MIN)

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65· to +200·C
o----:r
(25.40)UIN

Max Junction Operating Temperature

Lead Temperature

Power Dissipation (Note 2)

Maximum Total Dissipation at 25·C
+175·C
+260·C
i
0.180 (4.57)
0.140 (3.56)
500mW
Linear Derating Factor (from 25·C) 3.33 mW/·C

Maximum Voltage and Currents

WIV Working Inverse Voltage 75 V
10 Average Rectified Current 200 rnA
If
if
if(surge)
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 /LS
300 rnA
400 rnA

1.0 A
4.0A
0.021 (0.633) DIA
'0.019 (0.483)

NOTES:
iliJ_"."w0.080 (152)

Copper clad steel leads, tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram
ELECTRICAL CHARACTERISTICS (25·C Ambient Temperature unless otherwise noted)
SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 100 V IR = 100/LA
75 V IR = 5.0 /LA
IR Reverse Current 25 nA VR = 20 V
50 /LA VR = 2QV, TA = 150·C
5.0 /LA VR = 75 V
VF Forward Voltage lN914B, lN4448 0.62 0.72 V IF = 5.0 mA
lN916B, lN4449 0.83 0.73 V IF = 5.0 mA
lN914, lN916 }
1.0 V IF = 1(- mA
lN4148, lN4149
lN914A, lN916A} V
1.0 IF = 20 mA
lN4446, lN4447
lN916B, lN4449 1.0 V IF=30mA
lN914B, lN4448 1.0 V IF = 100 mA
trr Reverse Recovery Time 4.0 ns If = 10 mA, Vr = 6.0 V,
RL = 100 I} Rec. to 1.0 mA
C Capacitance lN914, lN914A }
lN914B, lN4148 4.0 pF VR = 0, I = 1 MHz
lN4446, lN4447
lN916, lN916A }
lN916B, lN4149 2.0 pF VR = 0, I = 1 MHz
lN4448, lN4449
Vir Peak Forward Recovery lN914, lN916 50 mA Peak Square Wave,
Voltage lN914B, lN916B 2.5 V 0.1 /Ls pulse width,
lN4448, lN4449 5 kHz· 100 kHz rep. rate
RE Rectification Efficiency lN914A, lN914B
45 % 2.0 V rms, f = 100 MHz
lN916A, lN916B

NOTES:
1. Maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For family characteristic curves, refer to Chapter 4, 04.
3-62
 1N957 - 1N973
500 mW SILICON PLANAR ZENER DIODES
ABSOLUTE MAXIMUM RATINGS (Note 1)
00-35 OUTLINE
Temperatures
Storage Temperture Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature
+175°C
+260°C o--:r (25.40)MIN

i
Power Dissipation (Note 2)
Maximum Total Power Dissipation at 25°C Ambient 500mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC
O.t80 (4.57)
0.140 (3.58)

0.021 (0.533) DIA

0.019 (0.483)

NOTES:
IlIJ~" "N 0.060 (152)

Copper clad steel leads. tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient)

SYMBOL Vz Zz IZT ZZK IZK IR VRT TC IZM
Nominal Maximum Test Maximum Test Maximum Test Voltage Typical Maximum
CHARAC- Zener Zener Current Zener Knee Current Reverse em perature Zener
TERISTICS Voltage mpedance Impedance Current ±20% ±10% ±5% Coefficient Current
(Note 3) (Note 4) (Note 4) @VRT Vz Vz Vz of Vz (Note 5)
@IZT @IZT @IZK Tolerance Tolerance Tolerance
UNIT V 0 mA 0 mA p.A V V V %/oC mA
IN957 6.8 4.5 18.5 700 1.0 150 4.4 4.9 5.2 +0.050 47
IN958 7.5 5.5 16.5 700 0.5 75 4.8 5.4 5.7 +0.058 42
IN959 B.2 6.5 15.0 700 0.5 50 5.2 5.9 6.2 +0.062 38
IN960 9.1 7.5 14.0 700 0.5 25 5.8 B.B 6.9 +0.06B 35
IN961 10.0 B.5 12.5 700 0.25 10 6.4 7.2 7.6 +0.072 32
IN962 11.0 9.5 11.5 700 0.25 5.0 7.0 8.0 8.4 +0.073 28
IN963 12.0 11.5 10.5 700 0.25 5.0 7.6 8.6 9.1 +0.076 26
IN964 13.0 13.0 9.5 700 0.25 5.0 B.3 9.4 9.9 +0.079 24
IN965 15.0 16.0 8.5 700 0.25 5.0 9.6 10.8 11.4 +0.082 21
IN966 lB.O 17.0 7.8 700 0.25 5.0 10.2 11.5 12.2 +0.083 19
IN967 18.0 21.0 7.0 750 0.25 5.0 11.5 13.0 13.7 +0.085 17
IN968 20.0 25.0 6.2 750 0.25 5.0 12.8 14.4 15.2 +0.086 15
IN969 22.0 29.0 5.6 750 0.25 5.0 14.0 15.8 16.7 +0.087 14
IN970 24.0 33.0 5.2 750 0.25 5.0 15.4 17.3 18.2 +0.088 13
IN971 27.0 41.0 4.B 750 0.25 5.0 17.2 19.4 20.6 +0.090 11
IN972 30.0 49.0 4.2 1000 0.25 5.0 19.2 21.B 22.B +0.091 10
IN973 33.0 5B.0 3.B 1000 0.25 5.0 21.1 23.8 25.1 ±0.092 9.2
NOTES.
1. These ratings are limiting values above which the serviceability of the diode may be Impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed' or low duty-cycle operation.
3. Type numbers without suffix have ± 20% tolerance on nominal Vz .
Type numbers with suffix A have ± 10% tolerance on nominal Vz .
Type numbers with suffix B have ±5% tolerance on nominal Vz .
4. The Zener impedances Zz and ZZK are derived by superimposing a 60 Hz signal on test currents IZT and IZK' having an RMS
value of 10% of the d.c. value of IZT and IZK respectively.
5. Maximum Zener Curent (lZM) is based on the maximum Zener voltage of a 20% tolerance unit.
6. For product family characteristic curves, refer to Chapter 4,013.

3-63
 1N3064·1N4305·1N4454
ULTRA FAST LOW CAPACITANCE DIODES
DIFFUSED SILICON PLANAR

• C ... 2.0pF@VR=0,f=1.0MHz
00-35 OUTLINE
• I rr ... 4.0 n8@ If = 10 mA, Ir = 10 mA, Vr = 1.0 V
• BV ... 75 V (MIN)

ABSOLUTE MAXIMUM RATINGS (Note 1) D~ (25.40)MIN

Temperatures
Storage Temperature Range
Max Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

-65°C to +200°C
+175°C
+260°C i0.180 (4.57)
0.140 (3.56)

~Il. ",.,.
Maximum Total Dissipation at 25°C 500mW
Linear Derating Factor (from 25° C) 3.33 mW/oC

Maximum Voltages and Currents

WIV Working Inverse Voltage 50 V
10 Average Rectified Current 100 mA
IF Forward Current Steady State 300 mA 0.021 (0.533) DIA
if Recurrent Peak Forward Current 400 mA 0.019 (0.483)

if (surge) Peak Forward Surge Current 0060 (152)

Pulse Width = 1.0 s 1.0 A

Pulse Width = 1.0 itS 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage
0.610 0.710 V IF = 2.0 mA
0.550 0.650 V IF = 1.0 mA
0.505 0.575 V IF = 250 itA
lN3064 f 1.0 V IF = 10 mA
lN4454
lN4305 0.70 0.85 V IF = 10 mA
IR Reverse Current 0.1 p.A VR = 50 V
100 p.A VR=50V.TA= 150°C
BV Breakdown Voltage 75 V IR = 5.0 p.A
trr Reverse Recovery Time (Note 3) lN4305 2.0 ns If = 10 mA, Vr = 6.0 V, RL = 100 n
1N3064 ~ If = Ir =10 mA, RL = 100 n,
lN4305 4.0 ns
lN4454 Vr = 1.0 V
C Capacitance 2.0 pF VR = 0, f = 1.0 MHz
RE Rectification Efficiency (Note 4) 45 Ofo f = 1.0 MHz

!!NF / °C Forward Voltage Temperature

3.0 mV/oC
Coefficient (Note 5)
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 1.0 rnA.
4. Rectification efficiency is defined as the ratio of de load voltage to peak rl input voltage to the detector circuit, measured with 2.0 V rms input to the circuit. Load resistance 5.0 n, load
capacitance 20 pF
5. This value lor AVF/oC is a typical value not a minimum or maximum.
6. For product family characteristic curves, refer to Chapter 4, 04.

3-64
 1N3070 • 1N4938
HIGH SPEED HIGH CONDUCTANCE DIODES
DIFFUSED SILICON PLANAR

• BV ... 200 V (MIN)

00-35 OUTLINE
• IR ... 100 nA (MAX)

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o-:r (25.40)IIIN

Max Junction Operating Temperature

Lead Temperature

Power Dissipation (Note 2)

Maximum Total Dissipation at 25°C Ambient
+175°C
+260°C

500mW
i 0.180(4.57)
0.140 (3.56)

I~IJ_, !, ~
linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 175 V
10 Average Rectified Current 200 mA
IF Forward Current Steady State DC 500 mA
if Recurrent Peak Forward Current 600 mA 0.021 (0 533) DIA
if (surge) Peak Forward Surge Current 0.018 (0.483)
Pulse Width = 1.0 s 1.0 A 0080 (152)
Pulse Width = 1.0!Ls 4.0 A
NOTES:
Copper clad sleel leads, lin pia led
Gold pia led leads available
Hermetically sealed glass packagn
Package weighl is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
IR Reverse Current 100 nA VR = 175 V
100 JJ.A VR = 175 V, TA = 150°C
BV Breakdown Voltage 200 V IR = 100 JJ.A
VF Forward Voltage 1.0 V IF = 100 mA
C Capacitance 5.0 pF VR = 0, f = 1.0 MHz
trr Reverse Recovery Time (Note 3) 50 ns If = Ir = 30 mA, RL = 1000
RE Rectification Efficiency (Note 4) 35 % f = 100 MHz
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 1.0 rnA.
4. Rectification efficiency is defined 8S the ratio of de load voltage to peak rf input voltage to the detector circuit, measured with 2.0 V rms input to the circuit. Load resistance: 5.0 kG, load
capacitance 20 pF.
5. 1N3070 and IN4938 are electrically and mechanically identical.
6. For product family characteristic curves, refer to Chapter 4, D 1.

3-65
 1N3595 • IN6099
HIGH CONDUCTANCE LOW LEAKAGE DIODES
DIFFUSED SILICON PLANAR

• BV ... 150 V (MIN)@ 100 /LA

00-35 OUTLINE
• VF···1.0V@200mA

ABSOLUTE MAXIMUM RATINGS (Note 1)

D~
Temperatures ;2~.40)MIN
St'orage Temperature Range -65°C to +200°C
Max Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

+175°C
+260°C
i 0.180 (4.S7)
0.140 (3.56)
Maximum Total Dissipation at 25°C Ambient 500mW

~Il. ".,.
Linear Derating Factor (From 25°C) 3.33 mW/oC

Maximum Voltage and Currents

WIV Working Inverse Voltage 125 V
10 Average Rectified Current 200 rnA
IF Forward Current Steady State 500 rnA
il Peak Repetitive Forward Current 600 rnA 0.021 (0.533) DlA
0.019 (0.483)
if (surge) Peak Forward Surge Current
0060(152)
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 /lS 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.83 1.0 V IF = 200 rnA
0.79 0.92 V IF = 100 rnA
0.75 0.88 V IF = 50 rnA
0.65 0.80 V IF = 10 rnA
0.60 0.75 V IF = 5.0 rnA
0.52 0.68 V IF = 1.0 rnA
IR Reverse Current 1.0 nA VR = 125 V
300 nA VR = 30 V, TA = 125°C
500 nA VR = 125 V, TA = 125°C
3.0 /LA VR = 125 V, TA = 150°C
trr Reverse Recovery Time 3.0 /LS IF = 10 rnA, Vr = 3.5 V, RL = 1.0 kQ
C Capacitance 8.0 pF VR = 0, f = 1.0 MHz
BV Breakdown Voltage 150 V IR = 100/LA
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. lN3595 and IN6099 are electrically and mechanically identical.
4. For product family characteristic curves, refer to Chapter 4, D2.

3-66
 1N3600· 1N4150· 1N4450
HIGH CONDUCTANCE ULTRA FAST DIODES
DIFFUSED SILICON PLANAR EPITAXIAL

• t rr ... 4.0 ns (MAX)

00-35 OUTLINE
• VF ... 1.0 V (MAX) @ 200 mA

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
0; (25.40)MIN
Storage Temperature Range -65°C to +200°C
Max Junction Operating Temperature
Lead Temperature
+175°C
+260°C
i
•
0.180 (4.57)
Power Dissipation (Note 2) 0.140 (3.56)
Max Total Power Dissipation at 25°C Ambient 500mW

~Il" ".~_
Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltages and Currents 1N3600 1N4150 1N4450

WIV Working Inverse Voltage 50 V 50 V 30 V
10 Average Rectified Current 200 rnA 200 rnA 200 rnA
IF DC Forward Current 400 rnA 400 rnA 400 rnA
0.021 (0.533) DIA
if Recurrent Peak Forward Current 600 rnA 600 rnA 600 rnA 0.019 (0.483)
if(surge) Peak Forward Surge Current 0060 (152)
Pulse Width = 1.0 s 1.0 A 1.0 A 1.0 A
Pulse Width = 1.0 J.l.s 4.0 A 4.0 A 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

1N3600
1N4450
1N4150
SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS
MIN MAX MIN MAX
BV Breakdown Voltage
75 V IR = 5.0 /lA
40 V IR = 5.0 /lA
IR Reverse Current 100 nA VR = 50 V
50 nA VR = 30 V
100 /lA VR = 50 V, TA = 150°C
50 /lA VR=30V,TA= 150°C
VF Forward Voltage 0.42 0.54 V IF = 0.1 rnA
0.54 0.62 0.52 0.64 V IF = 1.0 rnA
0.66 0.74 0.64 0.76 V IF = 10 rnA
0.76 0.86 V IF = 50 rnA
0.82 0.92 0.80 0.92 V IF = 100 rnA
0.87 1.0 1.0 V IF = 200 rnA
C Capacitance 2.5 4.0 pF VR = 0, f = 1.0 MHz
trr Reverse Recovery Time 4.0 ns If = Ir = 10 rnA to 200 rnA,
(Note 3) RL = 100 Q
4.0 ns If = Ir = 10 rnA, RL = 100 Q
6.0 ns If = Ir = 200 rnA to 400 rnA,
RL = 100 Q
tfr Forward Recovery Time 10 ns If = 200 rnA, tr = 0.4 ns,
Vfr = 1.0 V
NOTES:
1. Maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to O. 1 If.
4. For family characteristic curves, refer to Chapter 4, 04.
3-67
 1N4001·1N4007
1 A SILICON RECTIFIERS

• GLASS PACKAGE
• 1000 V RATING (1N4007)
DO-41 OUTLINE
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature Range -65°C to +175°C
Maximum Junction Operating Temperature +175°C
Lead Temperature +260°C 1

U
1.20130.51
1.10127.91

:~~:~~~:1
Maximum Voltages and Currents
VRRM Peak Repetitive Reverse Voltage 1N4001 50 V
VRWM Working Peak Reverse Voltage 1N4002 100 V

C[J ~
VR DC Blocking Voltage 1N4003 200 V
1N4004 400 V
1N4005
1N4006
600
800
V
V
j ,
.155 (3.941
.145 (3.681 I
I, ,05711451
, r--.05S11.401
1N4007 1000 V

1N4001 35 V
1N4002 70 V
1N4003 140 V
VR(rms) rms Reverse Voltage 1N4004 280 V
1N4005 420 V
NOTES:
1N4006 560 V
Copper clad steel leads, tin plated
1N4007 700 V Gold plated leads available
Hermetically sealed glass package
10 Average Rectified Forward 1A Package weight is 0.30 gram
Current (Note 2)
IFSM Peak Forward Surge Current 30A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC TYP MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.95 1.10 V 10 = 1.0 A, TA = 75°C
VF(AV) Average Forward Voltage 0.75 0.80 V IF =1A
VFM Peak Forward Voltage 1.40 1.60 V 10 = 1.0 A

IR Reverse Current 0.05 10.0 /LA Rated de Voltage

0.5 50 /LA Rated dc Voltage, TA = 100°C
IR(AV) Average Reverse Current 1.0 30 /LA Rated VR, 10 = 1.0 A
trr Reverse Recovery Time (Note 3) 1.0 /Ls If = 1.0 A, Vr = 30 V
NOTES.
1. These are limiting values above which the serviceability of the rectifier may be impaired.
=
2. Derate Linearly above TA 75°C (Note 3).
3. For product family characteristic curves and test circuit, refer to Chapter 4, 016.

3-68
 1N4009
ULTRA HIGH SPEED DIODE
DIFFUSED SILICON PLANAR

• I rr ... 2 ns (MAX)
• BV . . 35 V (MIN)@ 5 /LA 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

o-:r
•
Temperatures
(25.40)MIN
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
+175°C
+260°C

500 mW
i0.180 (4.57)
0.140 (3.56)

Linear Power Derating Factor 3.33 mW/oC

--,,-J

m~""."w
Maximum Voltage and Current
WIV Working Inverse Voltage 25 V
10 Average Rectified Current 100 mA
IF Continuous Forward Current 300 mA
if Peak Repetitive Forward Current 400 mA 0.021 (0.533) DIA
if (surge) Peak Forward Surge Current 0.019 (0,483)
Pulse Width = 1 s 1.0 A 0060 (152)
Pulse Width = 1 /LS 4.0 A
NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.0 V IF = 30 mA
IR Reverse Current 0.1 /LA VR = 25 V
100 /LA VR = 25 V, TA = 150'C
BV Breakdown Voltage 35 V IR = 5.0 /LA
trr Reverse Recovery Time 4.0 ns If = Ir = 10 mA (Note 3)
2.0 ns If = 10 mA, Vr = 6.0 V,
RL = 1001l
C Capacitance 4.0 pF VR = O,f = 1.0 MHz
NOTES,
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 1.0 mAo
4. For product family characteristic curves, refer to Chapter 4, 04

3-69
 1N4099 - 1N4121 • 1N4620 - 1N4627
500 mW SILICON ZENER DIODES

• 250!,A TEST CURRENT

• MAXIMUM NOISE DENSITY SPECIFIED 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
D~ {25.40)MIN

i
Maximum Junction Operating Temperature +200°C
Lead Temperature +260°C

Power Dissipation (Note 2) 0.180 (4.57)

Maximum Total Power Dissipation at 25°C Ambient 500 mW 0.140 (3.56)

Linear Power Derating Factor (from 25 ° C) 2.85 mW/oC

0.021 (0.533) OIA

O.01~ (0.4133)

NOTES:
11(. ,. ". 0060 (152)

Copper clad steel leads, tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (at 25°C Ambient)

SYMBOL Vz Zz IR V RT No IZM
Nominal Maximum Maximum Test Maximum Maximum
Zener Zener Reverse Voltage Noise Zener
CHARACTERISTIC Voltage Impedance Current Density Current
@I z = 250 /lA @I z = 250 /lA @VRT @I z = 250/lA (Note 4)
(Note 3) (Note 5)
UNIT V Q /lA V /lVlyHz rnA
IN4620 3.3 1650 7.5 1.5 1.0 130
IN4621 3.6 1700 7.5 2.0 1.0 119
IN4622 3.9 1650 5.0 2.0 1.0 110
IN4623 4.3 1600 4.0 2.0 1.0 99
IN4624 4.7 1550 10.0 3.0 1.0 91
IN4625 5.1 1500 10.0 3.0 2.0 84
IN4626 5.6 1400 10.0 4.0 4.0 76
IN4627 6.2 1200 10.0 5.0 5.0 68
NOTES:
1. These ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady-state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3 Tolerance on the nominal Zener voltage is ± 5%.
4 Maximum Zener current rating is based on the maximum Zener voltage, taking account of Zener impedance and tolerance.
5. VF = 1.0 V max at IF = 200 rnA for all types.
6 For product family characteristic curves, refer to Chapter 4, D13.

3-70
 FAIRCHILD. ZENER DIODES

ELECTRICAL CHARACTERISTICS (at 25°C Ambient)

SYMBOL Vz Zz IR VRT No IZM
Nominal Maximum Maximum Test Maximum Maximum
Zener Zener Reverse Voltage Noise Zener
CHARACTERISTICS Voltage Impedance Current Density Current
@I z = 250 JJ.A @I z = 250 JJ.A @VRT @I z = 250 I'A (Note 4)
(Note 3) (Note 5)

UNIT V !l I'A V I'V I y'FiZ rnA

IN4099 6.8 200 10.0 5.2 40 63
IN4100 7.5 200 10.0 5.7 40 57

•
IN4101 8.2 200 1.0 6.3 40 52
IN4102 8.7 200 1.0 6.7 40 49
IN4103 9.1 200 1.0 7.0 40 47
IN4104 10.0 200 1.0 7.6 40 42
IN4105 11.0 200 0.05 8.5 40 39
IN4106 12.0 200 0.05 9.2 40 35
IN4107 13.0 200 0.05 9.9 40 32
IN4108 14.0 1650 0.05 10.7 40 31
IN4109 15.0 1700 0.05 11.4 40 28
IN4110 16.0 1650 0.05 12.2 40 26
IN4111 17.0 1600 0.05 13.0 40 25
IN4112 18.0 1550 0.05 13.7 40 23
IN4113 19.0 1500 0.05 14.5 40 22
IN4114 20.0 1400 0.01 15.2 40 21
IN4115 22.0 1200 0.01 16.8 40 19
IN4116 24.0 200 0.01 18.3 40 17
IN4117 25.0 200 0.01 19.0 40 16
IN4118 27.0 200 0.01 20.5 40 15
IN4119 28.0 200 0.01 21.3 40 14
IN4120 30.0 200 0.01 22.8 40 13
IN4121 33.0 200 0.01 25.1 40 13

3-71
 1N4151·1N4152·1N4153·1N4154
HIGH SPEED DIODES
SILICON PLANAR EPITAXIAL

00-35 OUTLINE

• C ... 4 pF (MAX)
~~ (2540)MIN
• 'rr ... 2 nS (MAX)@ 10 mA, -6 V, 100 Q.

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
-i
0.180 (4 57)
0.140 (356)
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature
+175°C
+260°C J
~I.~,~-
Power Dissipation (Note 2)
Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor 3.33 mW/oC
~.021 (0 533) OIA
Maximum Voltage and Currents 0.019 (0.483)

WIV Working Inverse Voltage lN4151 50 V lN4153 50 V 0060 (152)

lN415230V lN4154 25 V
10 Average Rectified Current 100 rnA
NOTES:
'F Continuous Forward Current 300 mA Copper clad steel leads, tin plated
if Peak Repetitive Forward Current 400 mA Gold plated leads available
if (surge) Peak Forward Surge Current Hermetically sealed glass package
Pulse Width = 1 s 1.0 A Package weight is 0.14 gram
Pulse Width = 1 !LS 4.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS

VF Forward Voltage lN4154 1.0 V IF = 30 mA

lN4151 1.0 V IF = 50 mA
lN4152 &lN4153 0.49 0.55 V IF = 0.1 mA
0.53 0.59 V IF = 0.25 mA
0.59 0.67 V IF = 1.0 mA
0.62 0.70 V IF = 2.0 mA
0.70 0.81 V IF = 10 mA
0.74 0.88 V IF = 20 mA
--
IR Reverse Current lN4154 0.1 /lA VR = 25 V
100 /lA VR = 25 V, TA = 150 a C
lN4153 } 0.05 /lA VR = 50 V
lN4151
50 /lA VR = 50 V, TA = 150 a C
lN4152 0.05 /lA VR = 30 V
50 /lA VR = 30 V,TA = 150°C
BV Breakdown Voltage lN4154 35 V IR = 5.0 /lA
lN4153 } V
75 IR = 5.0 /lA
lN4151
lN4152 40 V IR = 5.0 /lA
trr Reverse Recovery Time 4.0 ns If = 10 mA,
Ir = 10 mA (Note 3)
2.0 ns If = 10 mA
Vr = -6.0 V, RL = 100 Q
C Capacitance 4.0 pF VR = 0, f = 1.0 MHz
NOTES:
1. The maximum ratings are limiting values above which satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted in applications involving pulsed or low duty cycle operation.
3. Recovery to 1.0 rnA.
4. For product family characteristic curves, refer to Chapter 4, 04.

3-72
 1N4306 ·1N4307
PAIR AND QUAD ASSEMBLIES DIODES
OF SILICON PLANAR EPITAXIAL

• AVF ... 10 mV (MAX)

PACKAGE OUTLINE 308
• C ... 2.0 pF (MAX)
1N4306
GENERAL DESCRIPTION
The 1N4306 and 1N4307 are epoxy encapsulated assemblies of two and four glass diodes
respectively. They feature tightly matched forward voltages over broad current and tempera-
ture ranges.

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 25°C Ambient
-65°C to +150°C
+150°C
+260°C
.112 (4.62)
.112/4.111

I_C'
.CHf-
.455 110.56)
-.j
I I
1-,112 (2.84)
~

•
Each Diode 250mW
Encapsulated Package 500mW
Linear Derating Factor (from 25°C) '."f:@2S.401
Each Diode 2.0 mW/oC
Encapsulated Package 4.0 mW/oC
.300 /7.62)
.ZIO 1.533)
Maximum Voltage and Currents
WIV Working Inverse Voltage 50V
10 Average Rectified Current 200mA NOTES:
'F Continuous Forward Current 300 mA Dumet leads. tin plated
if Recurrent Peak Forward Current 600 mA Gold plated leads available
if(surge) Peak Forward Surge Current Hermetically sealed glass diodes
Pulse Width = 1.0 s 1.0 A encapsulated in epoxy
Pulse Width = 1001's Package weight is 0.95 gram
4.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 75 V 'R = 5.0 mA
'R Reverse Current 50 nA VR = 50 V
50 nA VR = 50 V, TA = 150°C
VF Forward Voltage 0.75 1.00 V 'F = 50 mA
0.67 0.81 V 'F = 10 mA
0.56 0.67 V 'F = 1.0 mA
0.44 0.55 V 'F = 100 p.A
C CapaCitance 2.0 pF VR = 0, , = 1 MHz
trr Reverse Recovery Time 4.0 ns I, = 'r = 10 mA, RL = 1000
Recovery to 1 mil
AVF Forward Voltage Match (Note 4) 10 mV 'F = 0.1 to 10 mA
TA = -55°C to +125°C
20 mV 'F = 10 to 50 mA
TA = -55°C to +125°C
NOTES:
1. These are limiting values above which life or satisfactory performance may be Impaired.
2. These are steady state limits. The factory should be consulted on applications Involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 04.
4. For teat circuita, refer to Chapter 4, 018.

3-73
FAIRCHILD. PAIR AND QUAD ASSEMBLIES

PACKAGE OUTLINES 310

1N4307

.112 (2.84)
.182 (4.62) I I ~
162 E:-I-o-o -0-0--4
1

NOTES:
Dumet leads, tin plated
Gold plated leads available
Hermetically sealed glass diodes
encapsulated in epoxy
Package weight is 1.5 grams

3-74
 IN4728 - IN4752
1 W SILICON ZENER DIODES

ABSOLUTE MAXIMUM RATINGS (Note 1)

00-41 OUTLINE
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature +200°C
Lead Temperature

Power Dissipation (Note 2)

+260°C .031 U871.
.0291.7371 u_n_ 1
1.20 (30.5)

1_
1.10 (27 91

•
Maximum Total Dissipation at 50°C Ambient lW
Linear Power Derating Factor (from 50°C) 6.67 mW/oC .,0012.541--1 I
Maximum Surge Power (Note 8) lOW .09012.291 I ~

CIJ ~.14451
.165 (4191
1

.155 13.941
.145 (3 681
~ ~ .05711.45)
.05511.401

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.30 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient)

SYMBOL Vz Zz IZT ZZK IZK IR VRT IZM iZ (surge)
Nominal Maximum Test Maximum Test Maximum Test Maximum Maximum
Zener Zener Current Zener Knee Current Reverse Voltage Zener Zener
CHARACTERISTICS Voltage Impedance Impedance Current Current Surge
(Note 4) (Note 5) (Note 5) @VRT (Note 6) Current
@IZT @IZT @IZK (Note 3)
UNIT V n mA n mA JlA V mA rnA
IN4728 3.3 10.0 76.0 400 1.0 100 1.0 276 1380
IN4729 3.6 10.0 69.0 400 1.0 100 1.0 252 1260
IN4730 3.9 9.0 64.0 400 1.0 50 1.0 234 1190
IN4731 4.3 9.0 58.0 400 1.0 10 1.0 217 1070
IN4732 4.7 8.0 53.0 500 1.0 10 1.0 193 970
IN4733 5.1 7.0 49.0 550 1.0 10 1.0 178 890
IN4734 5.6 5.0 45.0 600 1.0 10 2.0 162 810
IN4735 6.2 2.0 41.0 700 1.0 10 3.0 146 730
IN4736 6.8 3.5 37.0 700 1.0 10 4.0 133 660
IN4737 7.5 4.0 34.0 700 0.5 10 5.0 121 605
IN4738 8.2 4.5 31.0 700 0.5 10 6.0 110 550
IN4739 9.1 5.0 28.0 700 0.5 10 7.0 100 500
IN4740 10.0 7.0 25.0 700 0.25 10 7.6 91 454
NOTES-
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Non-recurrent square wave, PW = 8.3 ms, superimposed on Zener test current, IZT'
4. Type numbers without suffix have ± 10% tolerance on nominal VZ' Type numbers with suffix A have ±5% tolerance on nominal VZ'
5. The Zener impedances Zz and ZZK are derived by superimposing a 60 HZ signal on test currents IZT and IZK, having an RMS value of 10%
of the d.c. value espectively.
6. Maximum Zener based on the maximum Zener voltage of a 10% tolerance unit.
7. VF = 1.2 V (max) @ IF 0 rnA for all types. Non-recurrent square wave, PW = 8.3 ms, TA = 55°C.
B. Non-recurrent square wave. PW = B.3 ms, TA = 55°C
9. For product family characteristic curves, refer to Chapter 4, D14.

3-75
 FAIRCHILD. 1 W ZENER DIODES

ELECTRICAL CHARACTERISTICS (25°C Ambient)

SYMBOL Vz Zz IZT ZZK IZK IR VRT IZM iZ (surge)
Nominal Maximum Test Maximum Test Maximum Test Maximum Maximum
Zener Zener Current Zener Knee Current Reverse Voltage Zener Zener
CHARACTERISTIC Voltage Impedance Impedance Current Current Surge
(Note 4) (Note 5) (Note 5) @VRT (Note 6) Current
@IZT @IZT @IZK (Note 3)
UNIT V n rnA n rnA !LA V rnA rnA
IN4741 11.0 8.0 23.0 700 0.25 5.0 8.4 83 414
IN4742 12.0 9.0 21.0 700 0.25 5.0 9.1 76 380
IN4743 13.0 10.0 19.0 700 0.25 5.0 9.9 69 344
IN4744 15.0 14.0 17.0 700 0.25 5.0 11.4 61 304
IN4745 16.0 16.0 15.5 700 0.25 5.0 12.2 57 285
IN4746 18.0 20.0 14.0 750 0.25 5.0 13.7 50 250
IN4747 20.0 22.0 12.5 750 0.25 5.0 15.2 45 225
IN4748 22.0 23.0 11.5 750 0.25 5.0 16.7 41 205
IN4749 24.0 25.0 10.5 750 0.25 5.0 18.2 38 190
IN4750 27.0 35.0 9.5 750 0.25 5.0 20.6 34 170
IN4751 30.0 40.0 8.5 1000 0.25 5.0 22.8 30 150
IN4752 33.0 45.0 7.5 1000 0.25 5.0 25.1 27 135

3-76
 1N4933 - 1N4937
FAST RECOVERY 1 A SILICON RECTIFIERS

• t rr ... 200 nB (MAX) DO-41 OUTLINE

• GLASS PACKAGE

ABSOLUTE MAXIMUM RATINGS

~um~_
Temperatures
Storage Temperature Range
.029C7371
U 1

U
-65°C to +175°C 1.20 130,5)
1.10127.9)
Maximum Junction Operating Temperature +150°C
Lead Temperature +260°C
:~::::~~~:I
Maximum Voltages and Currents
VRRM
VRWM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
lN4933
lN4934
50V
100V C[J ~
VR DC Blocking Voltage lN4935 200 V .155 13.941 ~ ~
.14513.681 .05711.45)
lN4936 400 V .05511.40)
lN4937 600 V

lN4933 35 V
lN4934 70 V
VR(rms) rms Reverse Voltage lN4935 140V
lN4936 280 V NOTES:
lN4937 420 V Copper clad steel leads, tin plated
Gold plated leads available
Average Rectified Forward Current Hermetically sealed glass package
(Note 2) 1A Package 'weight is 0.30 gram
IFSM Peak Forward Surge Current 30A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC TYP MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.1 1.2 V 10 = 1.0 A, TA = 75°C
VF Instantaneous Forward Voltage 0.95 1.2 V IF = 1 A
IR Reverse Current 0.10 5.0 !LA Rated dc Voltage
1.0 100 !LA Rated dc Voltage, TA = 100°C
trr Reverse Recovery Time (Note 3) 150 200 ns If = 1.0 A, Vr =30 V
IRM Reverse Recovery Current (Note 3) 1.5 2.0 A If = 1.0A, Vr = 30V
NOTES:
1. These are limiting values above which the serviceability of the rectifier may be Impaired.
2. Derate linearly above TA = 75°C (Note 3).
3. For product family characteristic curves and test circuit, refer toChapter 4,017.

3-77
 IN5226 · IN5257
500 mW SILICON ZENER DIODES

ABSOLUTE MAXIMUM RATINGS (Note 1)

00-35 OUTLINE
Temperatures
Storage Temperature Range -65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature
+200°C
+260°C ~-:r (2S.40)MIN

Power Dissipation (Note 2)

Maximum Total Power Dissipation at 75°C Ambient
Linear Power Derating Factor (from 75°C)
Maximum Surge Power (Note 3)
500mW
4.0 mW/oC
10W
i
0.180 (4.57)
0.140 (3 56)

J
~021 (0,533) DIA
0.019 (0.483)

NOTES:
lli .m·0·>~ 0.060 (152)

Copper clad steel leads, tin plated

Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise noted)

SYMBOL Vz Zz IZT ZZK IR VRT TC
Nominal Maximum Test Maximum Maximum Reverse Test Voltage Maximum
Zener Zener Current Zener Knee Current @ VRT Temperature
CHARAC- Voltage Impedance Impedance Coefficient
TERISTIC
(Note 4) (Note 5) (Note 5)@ ±20% ± 10,5,2,1% ±20, 10% ±5, 2,1% ofVZ
@IZT @IZT IZK = 0.25 mA VZTolerance VZTolerance VZTolerance VZTolerance (Note 6)

UNIT V n mA n p.A p.A V V %/oC

IN5226 3.3 28 20 1600 100 25 0.95 1.0 -0.070

IN5227 3.6 24 20 1700 100 15 0.95 1.0 -0.065
IN5228 3.9 23 20 1900 75 10 0.95 1.0 -0.060
IN5229 4.3 22 20 2000 50 5.0 0.95 1.0 ±0.055
IN5230 4.7 19 20 1900 50 5.0 1.9 2.0 ±0,030
IN5231 5.1 17 20 1600 50 5.0 1.9 2.0 ±0.030
IN5232 5.6 11 20 1600 50 5.0 2.9 3.0 +0.038
IN5233 6.0 7.0 20 1600 50 5.0 3.3 3.5 +0.038
IN5234 6.2 7.0 20 1000 50 5.0 3.8 4.0 +0.045
IN5235 6.8 5.0 20 750 30 3.0 4.8 5.0 +0.050
IN5236 7.5 6.0 20 500 30 3.0 5.7 6.0 +0.058
IN5237 8.2 8.0 20 500 30 3.0 6.2 6.5 +0.062
IN5238 8.7 8.0 20 600 30 3.0 6.2 6.5 +0.065
IN5239 9.1 10 20 600 30 3.0 6.7 7.0 +0.068
IN5240 10.0 17 20 600 30 3.0 7.6 8.0 +0.075
IN5241 11.0 22 20 600 30 2.0 8.0 8.4 +0.076

3-78
 FAIRCHILD· 500 mW ZENER DIODES

ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise noted)

SYMBOL Vz Zz IZT ZZK IR VRT TC

Nominal Maximum Test Maximum Maximum Reverse Test Voltage Maximum

CHARAC- Zener Zener Current Zener Knee Current @ VRT Temperature
TERISTIC Voltage Impedance Impedance Coefficient
(Note 4) (Note 5) (Note 5) @ ±20% ± 10,5,2, 1% ±20, 10% ±5, 2,1% of Vz
@IZT @IZT IZK = 0.25 rnA VZTolerance VZTolerance VzTolerance VzTolerance (Note 6)

UNIT V Q rnA Q JJ.A JJ.A V V %/oC

IN5242 12.0 30 20 600 10 1.0 8.7 9.1 +0.077

IN5243 13.0 13 9.5 600 10 0.5 9.4 9.9 +0.079
IN5244 14.0 15 9.0 600 10 0.1 9.5 10.0 +0.082
IN5245 15.0 16 8.5 600 10 0.1 10.5 11.0 +0.082

•
IN5246 16.0 17 7.8 600 10 0.1 11.4 12.0 +0.083
IN5247 17.0 19 7.4 600 10 0.1 12.4 13.0 +0.084
IN5248 18.0 21 7.0 600 10 0.1 13.3 14.0 +0.085
IN5249 19.0 23 6.6 600 10 0.1 13.3 14.0 +0.086
IN5250 20.0 25 6.2 600 10 0.1 14.3 15.0 +0.086
IN5251 22.0 29 5.6 600 10 0.1 16.2 17.0 +0.087
IN5252 24.0 33 5.2 600 10 0.1 17.1 18.0 +0.088
IN5253 25.0 35 5.0 600 10 0.1 18.1 19.0 +0.089
IN5254 27.0 41 4.6 600 10 0.1 20.0 21.0 +0.090
IN5255 28.0 44 4.5 600 10 0.1 20.0 21.0 +0.091
IN5256 30.0 49 4.2 600 10 0.1 22.0 23.0 +0.091
IN5257 33.0 58 3.8 700 10 0.1 24.0 25.0 +0.092

NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3 Non-recurrent square wave, PW = 8.3 ms, T A = 55°C.
4 Type numbers without suffix have ± 20% tolerance on nominal VZ'
Type numbers with suffix A have ± 10% tolerance on nominal VZ'
Type numbers with suffix B have ± 5% tolerance on nominal VZ'
Type numbers with suffix C have ± 2% tolerance-on nominal VZ'
Type numbers with suffix 0 have ± 1% tolerance on nominal VZ'
5. The Zener impedances Zz and ZZK are derived by superimposing a 60 HZ signal on test currents IZT and IZK' having an rms value of
10% of the dc value of IZT and IZK respectively.
6 Maximum temperature coefficients apply to 10,5,2 and 1% tolerance types only and are measured under the following conditions:
IN5226A, B, C, D through IN5242A, B, C, D: IZ "" 7.5 mA, T, = 25°C, T, = 125°C.
IN5242A, B, C, D through IN5257A, B, C, D: IZ = IZT' T, "" 25°C, T2 "" 125°C.
7 V F = 1.1V (maximum)@IF = 200 mA for all types.
8. For product family characteristic curves, refer to Chapter 4, D 13.

3-79
 1N5282
HIGH CONDUCTANCE ULTRA FAST DIODE
DIFFUSED SILICON PLANAR EPITAXIAL

• BV ... 80 V (MIN)@ 5.0 fJA

00-35 OUTLINE
• C ... 2.5 pF @VR = 0 V,I = 1.0 MHz
• t" ... 4.0 n8 @ I, = Ir = 10 mA to 200 mA

ABSOLUTE MAXIMUM RATINGS (Note 1) o----:r

(25.40)MIH
Temperatures
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature
-65°C to +200°C
+175°C
+260°C i0.180 (4.57)
0.140 (3.56)
Power Dissipation (Note 2)
Maximum Total Dissipation at 25° Ambient
Linear Derating Factor (from 25°C)
500mW
3.33 mW/oC ~J

I ~ I '.''''''..
Maximum Voltage and Currents
WIV Working Inverse Voltage 55 V
10 Average Rectified Current 200 rnA
IF
if(surge)
Continuous Forward Current
Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 fJ,S
300 rnA

1.0 A
4.0 A
0.021 (0.533) DIA
0.019 (0.483)
fi 0060('52)

NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weighl is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 1.05 1.30 V IF = 500 rnA
0.92 1.10 V IF = 300 mA
0.80 0.90 V IF = 100 mA
0.67 0.725 V IF = 10 mA
0.55 0.60 V IF = 1.0 mA
0.45 0.49 V IF = 0.1 mA
IR Reverse Currenl 100 nA VR = 55 V
100 fJA VR = 55 V, TA = 150'C
BV Breakdown Vollage 80 V IR = 5.0fJA
Irr Reverse Recovery Time (Note 3) 4.0 ns If = Ir = 10 rnA 10 200 mA
RL = 100 n
Irr Reverse Recovery Time 2.0 ns If = 10 mA, Vr = 6.0 V
Ifr Forward Recovery Time 10 ns If = 200 mA (Nole 4)

Vpk Peak Forward Voltage 2.0 V If = 500 mA (Nole 5)

C Capacilance 2.5 pF VR = O,f = 1.0 MHz
NOTES.
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady-state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. Recovery to 0.1 Ir -
=
4. Ir = 0.4 ns, V'r 1.0 V, pulse width = 100 ns; duty cycle ~ 1%.
5. Ir == B.O ns, pulse width = 1.0 ,us; duty cycle.",,;; 1%.
6. For product family characteristics curves, refer to Chapter 4, D4.

3-80
 1N576S-1N5770-1N5772-1N5774
MONOLITHIC AIR ISOLATED DIODE ARRAYS

• BV ... 60V@10"A
CONNECTION DIAGRAMS
• IR ... 100 nA @ 40 V
• VR ... 1 V @ 100 mA

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
Junction Operating Temperature Range
-65°C to +200°C
-65°C to +200°C
ffffffff! 1N576S
Maximum Power Dissipation Package Outline To-S5
Maximum Total Dissipation at T A = 25 ° C 500mW
Linear Derating Factor 4.0 mW 1°C above 25°C

Maximum Currents
10 Average Rectified Current (each diode) 300 mA
Linear Derating Factor 2.4 mAl °C above 25°C

IFSM Peak Forward Surge Current 500 mA

Pulse Width = 8.3 ms

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 60 V IR = 10 IJ.A, Pulse Width =
100 IJ.s, Duty Cycle ... 20%
VF Forward Voltage 1.0 V IF = 100 rnA
1.5 V IF = 500 rnA, Pulse Width =
300 ns, Duty Cycle = 2%

VFX Forward Voltage 1.0 V IF = 25 rnA; IF = 25 rnA for each

01 the other Diodes in
the Test Section (Note 3)

VFM Peak Forward Voltage 5.0 V IF = 500 rnA, Pulse Width =

150 ns, Duty Cycle ::52%
IR Reverse Current 100 nA VR = 40 V
50 "A VR = 40 V, TA = +150°C
IRX Reverse Current 10 "A VR = 40 V,IF = 25 rnA lor each
01 the other Diodes in
the Test Section (Note 3)

IRi Isolation Current lN5772, 1N5774 0.8 "A VR = 40 V (Note 4)

C Pin-to-Pin Capacitance (Note 2)
lN5768 4.0 pF VR = 0 V, I = 1.0 MHz
lN5770, ~N5772, 1N5774 8.0 pF VR=OV,I= 1.0 MHz

tlr Forward Recovery Time (Note 5) 40 ns II = 500 rnA, RS = 10 g, Vir =

1.8 V, tr = 15 ns Max
trr Reverse Recovery Time (Note 5) 20 ns II = 200 rnA, Ir = 200 rnA, RL =
100 g, Irr = 20 rnA
NOTES:
1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. This parameter is the total pin-to'pin capacitance measured across each diode. This does not necessarily represent actual diode capacitance since other diode Interconnections can
contribute additional capacitance.
3. Each common anode section and/or common cathode section tested separately.
4. Th.e isolation current shall be measured between any two interconnect pins of adjacent parallel sets of diodes with all other pins open circuited.
5. For Product Family characteristic curves and Test Circuits, refer to Chapter 4,015.

3-81
 FAIRCHILD- DIODE ARRAYS

fffHfff I 10

1N5770 1N5772 1N5774

Package Outline To-aS Package Outline To-aS Package Outline To-a6

To-as OUTLINE To-a6 OUTLINE

.01914831
.01513811

=F==="1
. 37019391
.250 16
~'
'-
351~
. "'._ _ _ _---'6

_I
10

e I
II
....
(~~~~

I----.j._ :~~~ !~:~~;

.'60 16.601
.240 ~610)

I .015
~
t
(03.'1
.019 (0.483)
TYP .

.006 (0.1521
!====~~:r--j~~i~~~~----L

.004 (0.102)

t=~t'.35I'...'f.-" •• '6601---1
.006 (.152) TYP. .240 (6.10)
t
.085 (O.216)
~t====~!f--~~~~§l~~~f
.025 (0.635)
.260 (6.604)
.240 (6 096) .065 (1 651J
.004 (092) .075 (0.1911
TYP. .050 (1.270)

NOTES: NOTES:
Alloy 42 leads, tin plated Alloy 42 leads, tin plated
Gold plated leads available Gold plated leads available
Hermetically sealed ceramic package Hermetically sealed ceramic package
Dot or tab indicates lead 1 Dot or tab indicates lead 1
Package weight is 0.26 gram Package weight is 0.27 gram

3-82
 1N6100· 1N6101
PLANAR AIR-ISOLATED MONOLITHIC DIODE ARRAYS

• c ... 3.0 pF (MAX)

• aVF ... 10 mV (MAX) @ 10 p.A CONNECTION DIAGRAM

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -55°C to +200°C 5 4 3
Maximum Junction Operating Temperature +175°C

fftfff+
Lead Temperature +260°C

Power Dissipation (Note 2)

Maximum Dissipation per Junction at 25°C Ambient 400 mW 8 9 10 11 12 13 14
Maximum Dissipation per Package at 25°C Ambient 600 mW
Linear Derating Factor (Irom 25°C) Junction 2.67 mW/oC
Package 4.0 mW/oC
See Package Outlines
Maximum Voltage and Currents TO·86 lN6100
WIV Working Inverse Voltage 65 V TO·116-2 IN6101
IF Continuous Forward Current 350 rnA
il(surge) Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 I1S 2.0 A

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 75 V IR = 5.0 p.A
IR Reverse Current (Note 4) 25 nA VR = 20 V
50 p.A VR = 20 V, TA = 150°C
VF Forward Voltage (Note 3) 1.0 V IF = 100 mA
VFM Peak Forward Voltage 5.0 V IF = 100p.A, PW = 100 ns
Duty Cycle ::::2%

IRX Reverse Current (Note 5) 10 p.A VR = 40 V

VFX Forward Voltage (Note 5) 1.0 V IF = 25 mA

C CapaCitance 3.0 pF VR = 0, I = 1 MHz
tlr Forward Recovery Time (Note 6) 15 ns II = 100 mA, RS = 50 n
Vir = 1.1 V,tr:::: IOns
trr Reverse Recovery Time (Note 6) 5.0 ns If = Ir = 10 mA
Irr = 1.0 mA, RL = 100 n
",VF Forward Voltage Match (Note 6) 10 mV IF = 10 rnA
NOTES
1 ThfJse ratings are limiting values above which life or satisfactory performance may be impaired.
2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
VF is measured using an 8 ms pulse
See Test circuits (Note 6) for measurement of reverse current of an individual diode.
IF = 25 mA for each of the other diodes in the array.
For product family characteristic curves and test cirCUits, refer to Chapter 4, D15

3-83
 FAIRCHILD. DIODE ARRAYS

To-a6 OUTLINE TO-116-2 OUTLINE

r--
I AA
7:5 {199391----j
70(1905).AA I

.006 (0,152)
.004 (0.102)

~t~==~:~~~:~~~t
I .260 I
.025 r-- .240
(0.635)
TYP.
------l
(6.604)
.065
(6.096)
.050
(1.651)
(1.270)

NOTES:
Alloy 42 leads, tin plated
Gold plated leads available fMQ!
(.686)
Hermetically sealed ceramic package STANDOFF
WIDTH
Dot or tab indicates lead 1
Package weight is 0.27 gram
NOTES:
Alloy 42 pins, tin plated
Gold plated pins available
Hermetically sealed ceramic package
Pins are intended for insertion in hole rows
on .300" (7.620) centers
They are purposely shipped with
"positive" misalignment to facilitate
insertion
Boardwdrilling dimensions should equal
your practice for .020" (0.508) diameter
pin
Package weight is 2.0 grams

3-84
 1S44
GENERAL PURPOSE SWITCHING DIODE
DIFFUSED SILICON PLANAR

• BV ... 50 V (MIN)@ 100 I"A

• t rr ... 8.0 ns (MAX) 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range -65°C to +200°C
o-:r (25.40)MIN

Maximum Junction Operating Temperature

i
•
+175°C
Lead Temperature +260°C

Power Dissipation (Note 2) 0.180 (4,57)

0.140 (3.56)
Maximum Total Power Dissipation at 25°C Ambient 500 mW
Linear Power Derating Factor (from 25°C) 3.33 mW/oC
J
+[ ~.".,.
Maximum Voltage and Currents
WIV Working Inverse Voltage 40 V
10 Average Rectified Current 100 rnA
IF Continuous Forward Current 300 rnA
if Peak Repetitive Forward Current 400 rnA 0.021 (0.533) DIA
if (surge) Peak Forward Surge Current 0.019 (0.483)

Pulse Width 1s 1.0 A 0.060 (1.52)

Pulse Width = 1 I"S 4.0 A
NOTES:
Copper clad steel leads. tin plated
Gold plated leads available
Hermelically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
VF Forward Voltage 0.65 1.00 V IF = 10 rnA
0.70 1.20 V IF = 30 rnA
IR Reverse Current 50 nA VR = 10 V
BV Breakdown Voltage 50 V IR= 100l"A
C Capacitance 4.0 pF VR = 0, f = 1 MHz
Os Stored Charge 120 pC IF = 10 rnA, VR = 10 V
trr Reverse Recovery Time 8.0 ns If = Ir = 10 rnA
Recovery to 1 rnA
NOTES,
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 04

3-85
 15920-15921-15922-15923
GENERAL PURPOSE DIODES
DIFFUSED SILICON PLANAR

• VF ... 1.2 (MAX)@ 200 mA

• IR ... 100 nA (MAX)@ RATED WIV 00-35 OUTLINE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures
Storage Temperature Range
D~ (25.40)MIN
-65°C to +200°C
Maximum Junction Operating Temperature
Lead Temperature

Power Dissipation (Note 2)

Maximum Total Dissipation at 25°C Ambient
+175°C
+260°C

500mW
i0.180 (4.57)
0.140 (3,56)

Linear Derating Factor (from 25°C) 3.33 mW/oC

Maximum Voltage and Currents

1S920 1S921 1S922 1S923
WIV Working Inverse Voltage
50 V 100 V 150 V 200 V
(-65°C to + 100 0 e)
10 Average Forward Current 200 rnA 200 rnA 200 rnA 200 rnA
if Recurent Peak Forward Current 600 rnA 600 mA 600 rnA 600 rnA
if(surge) Peak Forward Surge Current
Pulse Width = 1 s 1.0 A 1.0 A 1.0 A 1.0 A
Pulse Width = 1 /1-S 4.0 A 4.0 A 4.0 A 4.0 A NOTES:
Copper clad steel leads, tin plated
Gold plated leads available
Hermetically sealed glass package
Package weight is 0.14 gram

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)

SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS
--
IR Inverse Current 100 nA VR = rated WIV
10 /J-A VR = rated WI V, TA = 100°C
VF Forward Voltage 1.2 V IF = 200 rnA
C CapaCitance 6.5 pF VR = 0, f = 1 MHz
Os Stored Charge 12 nC IF = 10 rnA, VR = 10 V
NOTES.
1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For product family characteristic curves, refer to Chapter 4, 01.

3-86
 ,~
\
\
.'-../
", ............. /
,i;/
., ;~t/·
i

..•.....
.
>,'"
,.
Ii

..6.
. >'
....•..••..•.•.
 CURVE SET NUMBER 01
HIGH VOLTAGE SMALL SIGNAL DIODE

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

DC FORWARD CURRENT FORWARD CURRENT VERSUS DC FORWARD CURRENT VERSUS

VERSUS FORWARD VOLTAGE FORWARD VOLTAGE (PULSE) TEMPERATURE COEFFICIENT
1000
TA - 25"C TAt 2..J I
V
1
o
100 , 1o
Pul•• Width 4001'_
Duty Cycle '" 2%
=
1 '00
o

i 'o i
13 100

/
1/ 1 '0

1o
.Mo
"0

0.1
I
...
o
1
~
"0
0.1

0.01
o 0.2 0.4 0.6 0.8 1.0 1.2
10
0.6
II
0.7 O.S 0.9 1.0 1.1 1.2 1.3
0.01~~~
o 0.5 1.0 1.5 2.0 2.5 3.0

•
VF - FORWARD VOLTAGE - VOLTS VF - FORWARD YOLTAGE - VOlTS TC - TEMPERATURE COEFFICIENT - mY I"C

REVERSE CURRENT VERSUS REVERSE CURRENT VERSUS FORWARD CURRENT VERSUS

REVERSE VOLTAGE AMBIENT TEMPERATURE DYNAMIC IMPEDANCE
o. 1 100
VA - fOOY 1"'1\1 TA" "
TA-25"C ~ p-+ f·I.O~Hz
.0. ~ ,MAx --IAC'O,lloe
1. 1.
o
0
10
1/ ~ 10 MIN ~1Io. _rcIT=:r::-:..t1 i±-:
II .0 1

l.,..i--' .... '"'"

-1-1-- I Il!
1.0
II"'::+-
u 1.0

!!l
H-++H-+~rl-i-+++'-++'H'+-l
E=l=±l:J:=l:=:F#rIi{;c:i+hi- J H-
~ ~:::::~~
; .005
O~ ! 0.1 .:.... 0.1 ''''c+-t-j-.'.,.'-j
H-+fH-++H-+I-

!l~K
o
0
SE !J

0.01 L.l...llLJ-L..LlJ-L-L.Lll-L-Ll.lIo....J
.001
o 20 40 60 80 100
0.01
25 50 75 tOO 125 150
U 10 ~ II m
RD - DYNAMIC IMPEDANCE - Q
VA - REVERSE VOLTAGE - VOLTS

AVERAGE RECTIFIED CURRENT AND

CAPACITANCE VERSUS FORWARD CURRENT VERSUS
REVERSE VOLTAGE AMBIENT TEMPERATURE POWER DERATING CURVE
3.0 500 600

R~
TA - 25'"C
1= 1.0 MHz - \.
2.5
- -
~""0 \.
'!L
2.0

-~
0

i 1.5
300

~
"\
\.
§ fo-
~o~.'fG'£ ~
yp I
200
"'11-
1.0 +-- t - ftC'!. •
~/toCfJ.
0
"'.., \.
" 0.5
I~'~:l\
100
1\
N
0
0 3.0 8.0
VA - REVERSE VOl.TAGE - VOlTS
9.0 12 1.
0
2S 5(1 75
TA - AMBIENT TEMPERATURE
100 125 150
_·c
175 200
o
o 26 50 75 100 125 150 175 200
TA - AMBIENT TEWERATURE - "c
"'

4-3
 CURVE SET NUMBER 02
LOW LEAKAGE SMALL SIGNAL DIODE

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD VOLTAGE VERSUS FORWARD CURRENT VERSUS CAPACITANCE VERSUS

FORWARD CURRENT TEMPERATURE COEFFICIENT REVERSE VOLTAGE
'000 500 6.0

100
/ 5.0

f-w

;
0 4.0

0
\--:-= ~--=
-\- - == 3.0 \
-\
1
- 1\,
U
2.0
'" r- I -
-" '.0

1
0.01 o,~ I0 1.5 2.0 2.5 3.0
0.2 0.4 0 .• 0.8 '.0 '.2 Te - TEMPERATURE COEfFICIENT - mllj"C
4.0 8.0 12
VF - FORWARD VOLTAGE - VOLTS VR - REVERSE VOLTAGE - VOL15

REVERSE VOLTAGE VERSUS REVERSE CURRENT VERSUS DYNAMIC IMPEDANCE VERSUS

REVERSE CURRENT AMBIENT TEMPERATURE FORWARD CURRENT
100
'.0 5K
TA = 25°C VR 125V
0.5
/
'K I f-lkKz
lac" 0,1 d,
":!, ..... ":!
0

~ 0.2 I-
"'+
! l-'"
V
! '00

0
I

!,
005
!,
10
1/
./

1
TYe

Sf Sf '.0
0.02 ~
0.0 1 ~
0.01 0.' 01 10 100 lK 10K
o 2 50 75 100 125 o 25 50 75 100 125 150
VR - REVERSE VOLTAGE - YOLTS TA - AMBIENT TEMPERATURE - "C RO - DVNAMIC IMPEDANCE - Q

AVERAGE RECTIFIED CURRENT

AND FORWARD CURRENT VERSUS
POWER DERATING CURVE AMBIENT TEMPERATURE
500
soo
I\. - R~
~
,
400
~
400 -
c--~"b'Co
'I3p~
i
~
300
\
)00
\'00
C I\. 100 f-/N ~C( N'\:',
%

1f 200

'\. 100 ~DC" '\

C-- -

100
~';",
o \ ~
o 25 50 75 100 125 150 175 200
TA - AMBIENT TEMPERATURE - °C TA - AMBIENT TEMPERATURE -'C

4-4
 CURVE SET NUMBER 03
ULTRA-FAST SMALL SIGNAL DIODE

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD VOLTAGE FORWARD CURRENT VERSUS CAPACITANCE VERSUS

VERSUS FORWARD CURRENT TEMPERATURE COEFFICIENT REVERSE VOLTAGE
1000 100~~~-~~-----_~-~~ 1.0

-...
1 100
'a. 7

I
I

•
§~
10
u 10 .5

i 1.0

~
~ .4

~
U
I .3
I , 0 If--+----i-+'H-+\-+-+--i u
J!. .10 2

.01 o
.2 .4 .6 .8 1.0 1.2 1.4 o
VF - FORWARD VOLTAGE - VOLTS VR - REVERSE VOlTAGE - VOLTS

REVERSE VOLTAGE VERSUS REVERSE CURRENT VERSUS DYNAMIC IMPEDANCE VERSUS

REVERSE CURRENT AMBIENT TEMPERATURE FORWARD CURRENT
100 10:0
1'"
_T,I.
=---r--
15,C
--:ce','
'=-=:::- -= =--=
---

"l.
VR!20V

100
1-= - -I - 1--- f±=
-- 10
-- -,-
~
./' I

/ - ~- -

!!
10 z
~ - /' '7
B - f---
-- - --
/ o -
f-
lQ
V
"" /
~
0
'[7
~
0.1
1.0
./
./" I

~,~"'~ -- -

=
-~ I
1":== ~ -.---- - If 0.01 c:- 0I
c----

0.1
~-- ,-
0.001 oI ~ --i-f= --- -

10 )0 o 25 50 75 100 125 150 10K IK 100 10

5.0 10 B

VR - REVERSE VOLTS - VOLTS

" TA - AMBIENT TEMPERATURE - "c
RO - DYNAMIC IMPEDANCE - OHMS

POWER DISSIPATION. AVERAGE

RECTIFIED CURRENT AND JUNCTION TEMPERATURE
FORWARD CURRENT VERSUS TRANSIENT THERMAL VERSUS TIME
AMBIENT TEMPERATURE RESISTANCE VERSUS TIME _ (COOLING CURVE)
250 .... ...,.,-,---,,---r-,---,,-, 175
MEASURED INS'TI~LAIRCHAMBER @ZSoC
_LiED Il~l!lAlf cHLL l-
~ 5ro~+++f~-+-~+++f++-H~H \
BO
200r--+-~'
"~ 115
i' 25'r
~ H-+++-+~+H-+++-+-III---H--HH ULJERMt
~"
150 400 100
~ JOO H-+++-+~+H-+++-+++--H--HH ~
,,~ TIME CONSTANT
75
100 f--I--+---"Io:!.'
I "- ........
~-
50

15 -- ---- f-

.0001.001 .01 0.1

TIME - SECOND~
1.0 10 10DIlXXl
o
o 10
TIME - SECONDS
)0 . 50

T A - AMBIENT TEMPERATURE - °C

4-5
 CURVE SET NUMBER 04
HIGH SPEED GENERAL PURPOSE SMALL SIGNAL DIODE

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD VOLTAGE VERSUS FORWARD CURRENT VERSUS CAPACITANCE VERSUS

FORWARD CURRENT TEMPERATURE COEFFICIENT REVERSE VOLTAGE
500
1000~~
100
~ 100
, '/ aa 3.0 r-+-II-+--l--+--+-+-~
~':::.
,,-- -==
I 10
:;."== == ; 20 rr-.-I-+-l--+--1--+-+-l

i.
,
1.0

0.1 !
~
I
-~
1.01---+-+--I'r-+--I\--1---1

0.11---+-+--1-\+--+---\1---1 U
,
1.0
I--r--r--- _
f-+-I-+---+-'F"'!'-I--.1

0.01
0.2 0.4 0.• 0.• 1.0 1.2 O,Ol!c
O ---'0:':.5--:'1.0:--'1.':-5---:,LO-'-c,:':.5-""0"->--",.5 o 0~--'--:'4.:-0-"-.:'-.0:--'-_,L2-'--1,.
VF - FORWARD VOLTAGE - VOLTS TC • TfMPERATURf COEffiCIENT· mVioC VR - REVERSE VOLTAGE - VOLTS

REVERSE CURRENT VERSUS REVERSE CURRENT VERSUS DYNAMIC IMPEDANCE VERSUS

REVERSE VOLTAGE AMBIENT TEMPERATURE FORWARD CURRENT
100 100 ,-,----,--,--'---=,.-...,..--'-,
.0 100 """"''''''1'''''
1-"1
lA - 250C VA 25 V
.0 ~ ' " Il-
lac,O,jac
~ 101---1---I--l---1--+-~ 1 10 H-++~hl+-H-++-r"H-.1
Iryp

~
40
~ l(\( I
_____F/--I
- ,.01---+--+-+-+-/ ~ to H-++H--+~~
I '\f..\. J
f-"" I
I~~+
20

".....
/'"
/'
V !
~ .100 1---1--".....-j...."....."-+--1---+--~
i 1'\ I
_..., 0.1 H++H-++H-'l'~+-H-1
"'~ ~
I

I
10
7
.010 '-_'----'_-"_-'-_-'-_-1 ~
d. 010'';.I--'-LfI.-::-0L..J---!;-,o--'-"--;-!'OO;;-l---'-"',,-""',!,o<
5 10 15 20 25 25 50 75 '00
VR - REVERSE VOLT AGE - VOLTS TA - AMBIENT TEMPERATURE -"C Ro - DYNAMIC IMPEDANCE· OHMS

AVERAGE RECTIFIED CURRENT

REVERSE RECOVERY TIME VERSUS AND FORWARD CURRENT VERSUS
FORWARD CURRENT (IF I R ) C AMBIENT TEMPERATURE
4.0
......... V
500 1'\.) I
i-r'( +-
" )0 /
V
400 -~~.~"2j.o;,~+-+--+--+---+---I
~ /~ ;- - -'\~6:.:+ -
~ 300 ~y
~ '.0 ~

,oo~~-_\~-
~ -
i
,~~'~.
-

J: \.0

",
00 o O'--'~:--'5a:--'75:-:"'OO:-:"I15:-:"-150:-'1":75---,',aa
100 100 JOO 400
FORWARD CURRENT' REVERSE CURRENT - mA
TA - AMBIENT TEMPERATURE - "c

POWER DERATING CURVE

500
I'\.
400
\.
300
\
200 \.

'00 I'\.
0~~~-"-~-L-L-1\--1
o 25 50 75 100 125 150 175 200
10 - AVERAGE TEMPERATURE _ °c

4-6
 CURVE SET NUMBER 06
ULTRA-LOW LEAKAGE SMALL SIGNAL DIODE

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

REVERSE CURRENT VERSUS REVERSE CURRENT

REVERSE VOLTAGE VERSUS TEMPERATURE
1O'-'-~-r-'--'---'--'----'-'------' 10,000 r--r-.,----r-,--......,.--,--,
T~'15IOCT i+~ I

,,8.0

I!l 6.0
~,I
Ii
I IV' 1000=11°.
100
... ,~

9~'/
04

- - ) LI7 / 1 -

1"I.0 ~~~t:~'.;"f''1!-;-!1
c-
" 4.0 . I 1/ I
I
1

_" h- f-+-7 v , .' j ' -

20 1 I I

·0 ~+kf -ti -+- .1

o 5 10 15 20 25 30 o 25 50 75 100 125 150 175

•
VR - REVERSE VOLTAGE - VOLTS
TA - AMBIENT TEMPERATURE - "C

FORWARD VOLTAGE VERSUS CAPACITANCE VERSUS

FORWARD CURRENT REVERSE VOLTAGE

1.0-
1.1 f-+-+-t--+--i--t---t---J

1.0 \
~
o.• I-I-I---F==-F+-+-+-1

0.6 f-+--+-+-+-+-t--+--i
2?, I
o i
IF FORWARD ClJRRENT-A VR - REVERSE VOLTAGE - VOLTS

4-7
 CURVE SET NUMBER 06
ULTRA-LOW LEAKAGE SMALL SIGNAL DIODE

A BOUNO CIRCUIT FOR MOS FET PROTECTION CIRCUIT

OPERATIONAL AMPLIFIERS

*
-v

~
FJTlIOO~~
FJTllOO FJTll 00 ,----'vV'v----Q +

ZFB .lAFJTllOO I
" I

FJTllOO .:s~

+v

The bound circuit prevents overloading and saturation of operational

amplifiers. The circuit has negligible effect on the operational The picoampere diode affords excellent gate voltage protection
amplifier until overload conditions occur. The use of the low while maintaining the DC input impedance 'Bt about one million
leakage picoampere diode permits realization of extremely high megohms. I n addition the very low capacity of the FJT 11 00 will
input impedance for normal input voltages. have a relatively small effect on the circuit input capacity.

PEAK FOLLOWER CIRCUIT

OUTPUT VOLTAGE OF THE

PEAK FOLLOWER CIRCUIT
VERSUS TIME
10
FJTI100

9.0

~
~
g 8.0

-15V
47~F
1: 7.0

VOUT ,0
(MYLAR) lOkI!
6.0

5.0
0 5,0 10 15 20' 25 30 35
t - TIME -MINUTES

A nearly constant voltage peak follower circuit is available by using a picoampere di-
ode. A comparison between the use of the FJT1100 and a "low leakage" FDH333 diode
in the circuit is shown in the curves of VOUT vs Time.

4-8
 CURVE SET NUMBER D7
BANDSWITCH DIODE

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD CURRENT VERSUS REVERSE CURRENT VERSUS

FORWARD VOLTAGE AMBIENT TEMPERATURE

100 I
I 10K
YR-15V

':!,
10
II !z 1000

i" 100

1.0
I ! , 10

I
" 1.0
0.1
0.4 0.8 0.8 1.0 1.2 o 50 100 150

VF - FORWARD VOLTAGE - VOLTS

T A - AMBIENT TEMPERATURE - ·C

CAPACITANCE VERSUS SERIES RESISTANCE VERSUS

REVERSE VOLTAGE FORWARD CURRENT
4.0
1!,Jo~H'

3.0
r-.
r\
2.0
1\ 1\
I'\. I'
i'
1.0
I' ~
0.1
o I -
I'"'-

1.0 10 100 1 10 100

VR - REVERSE VOLTAGE - VOLTS IF - FORWARD CURRENT - mA

4-9
 CURVE SET NUMBER 08
ABRUPT JUNCTION VARACTOR

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25 c C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED
RF400 RF401

FIGURE OF MERIT FIGURE OF MERIT

VERSUS FREQUENCY

IOkmfiD
VERSUS FREQUENCY
,
VR "4.OV VR "4.0V

--

'\

100 lOOL--L-L~~l-~-L~~
Illi I II,
I 10 100 1.0 10 100
f ' FREQUENCY - MHz f - FREQUENCY - MHz

FIGURE OF MERIT FIGURE OF MERIT

VERSUS REVERSE VOLTAGE VERSUS REVERSE VOLTAGE

k~lMf
.- := r= cL
..v V
f"50MHz
i+rr i I-" y
100
fl.lJMHl UllV 100
-UMt V V I

I
I ,1,1 :
10
0.1
I I II
1.0
I II I 10
0
0.1 1.0
III
REVERSE VOLTAGE -v REVERSEVOLTAGE-V

CAPACITANCE VERSUS CAPACITANCE VERSUS

REVERSE VOLTAGE REVERSE VOLTAGE
100 100
f ~ lOOMHz f -IOOM~z

Hit

i~
t--
10
:--'r-. 10
-- ..,..j. iIi'I

-,;::- -~--+-+-i~
It , -
I
J
I i 1.0
0.1
Iii I ! III11
0.1 1.0 10 1.0 10
VR-REVERSEVOLTAGE-VOLTS VR - REVERSE VOLTAGE - VOLTS

RF400 AND RF401

POWER DERATING CURVE
500

-
~-
'\
'\
'\
~ 100 '\

o '\
o ~ ~ B ~ rn ~ m ~

TA - AMBIENT TEMPERATURE - °c

4-10
 CURVE SET NUMBER 09
DUAL FM VARACTOR

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

REVERSE CURRENT VERSUS NORMALIZED CAPACITANCE VERSUS

REVERSE VOLTAGE JUNCTION TEMPERATURE
,--r---,,--,--,---r---,
1.0 1.04

1.03 f--+--+-,-?~",,-¥~r-
I;: 0-
1.02 ~'<'

1.01 W'-lf\.-__,~o~..,_-,
0.1 1--+-+-+---1:7""9-...----1 1.00 ir:--l
/' --.7
/I"
0.99
NORMALIZED AT 25°C

0.98/
0.97 ~_-L _ _'__-"_ _L-_ _'
0.01 ' - - ' ' - - " - - ' - - - - ' - - - ' - - - ' -50 50 100 150 200

•
o 10 15 20 25 30
T J - JUNCTION TEMPERATURE _ °C
VR - REVERSE VOLTAGE - VOLTS

FIGURE OF MERIT VERSUS FIGURE OF MERIT VERSUS

REVERSE VOLTAGE FREQUENCY
700'--'---r--'--~-,
1000 \

600 1--+--+--f--+----1
f=100MHz
500 1--+--+--f--+----1
I\.
4001--t--+----r---P~~~
1--+--+r-71/"----+----1 100 I--j---l:>";:-f--t--t-..,

"
300
V
200 f--+-7"""t---t--t----j
......... V
100 17""'---+--+--f--+----1

10 15 20 25 10L-_'--''-~_-'-_--'-_..J

VR - REVERSE VOLTAGE - VOLTS

o 100 200 300
f - FREQUENCY - MHz

4-11
 CURVE SET NUMBER 010
HOT CARRIER DIODE

TYPICAL ElECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD CURRENT VERSUS REVERSE CURRENT

FORWARD VOLTAGE VERSUS REVERSE VOLTAGE
0

~T'
I-
z)oc
t=Z' --
r--= r - -
~ T, -{soc _.

~ I0
0 /
I --
-- i
w=
-

~ o. I
f= I

I-- 1/--
r----- ---
I 0.0 I
0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o
VF - FORWARD VOLTAGE - VOLTS VR - REVERSE VOLTAGE - VOLTS

CAPACITANCE VERSUS
REVERSE VOLTAGE
0

o. 8
TA, ?5"C _ ._- _ ..
- . - f--
~+-
"l I

6
..... r-- I
i

o. 4 i
I
I I
2

0
t-- -
i
f--
f-t-
VR - REVERSE VOLTAGE - VOLTS

NOISE FIGURE TEST CIRCUIT

4-12
 CURVE SET NUMBER 011
HYPER·ABRUPT JUNCTION UHF/VHF VARACTOR

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE

REVERSE CURRENT VERSUS CAPACITANCE TEMPERATURE COEFFICIENT

REVERSE VOLTAGE VERSUS REVERSE VOLTAGE
1.0 0.1

/ I\~
/ 0.05

V
0.1 I\.
/ r\.
0.02
/
./ ~

0.01
o
./ " 10 20 30
0.01
1.0 10 100

•
VR - REVERSE VOLTAGE - VOLTS VR - REVERSE VOLTAGE - VOLTS

CAPACITANCE VERSUS FIGURE OF MERIT

REVERSE VOLTAGE VERSUS FREQUENCY
50 1000

500
"'.1' J
Rl3.0V

1'\
,~,

-.......
30 ~,

~~0~'
'a 20
, 100 ~"''''';r\~ -
~ 10

I"
o

"
5.0
'" 4.0
~ 3.0
I 2.0

1.0
1=1MHz

O.S 1.0
"
2.03.0 5.0 10 20 30
50

10
"
1,,\
10 50 100 SOD 1000
VR - REVERSE VOLTAGE - VOLTS F - FREQUENCY - MHz

4-13
 CURVE SET NUMBER 012
HYPER-ABRUPT JUNCTION VHF I FM VARACTOR

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE

REVERSE CURRENT VERSUS CAPACITANCE TEMPERATURE COEFFICIENT

REVERSE VOLTAGE ~ VERSUS REVE~SE VOLTAGE
'.0
~
, o. ,
J
1,
/
I
~ o.os
~
1..,
I
,/
\..
V
! t'-..
,
1>

0.01
o
/
V
./

'0 '0
VR - REVEASE VOLTAGE - VOLTS
30
r'
(.) 0.0
I

~
,
1.0 30 '0
1\

VR- REYERSE VOLTAGE - VOLTS

3.0 '00

CAPACITANCE VERSUS FIGURE OF MERIT VERSUS

REVERSE VOLTAGE FREQUENCY
'00 '000

50
40
500 ""
~
30
....... I
~
20

'0 ""
l!;
w'OO "'
~,
"
Iiif 5.0
1\
<l 4.0 a
3.0
I

u 2.0
I'\...
'.0 '0 10
0.5 1.0 2.0 3.0 5 10 20 30 50 100 500 1000
VR - REVERSE VOLTAGE - VOLTS F - FREQUENCY - MHz

4-14
 CURVE SET NUMBER 013
500 mW ZENER

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE

TEMPERATURE COEFFICIENT DYNAMIC IMPEDANCE

u
.12
VERSUS ZENER CURRENT
I
,. VERSUS ZENER CURRENT

~ J 500

...I .00
2. V I
ili
(j .0'
I
w
u
Z
C
200

100 i" r-.... "

iE
~
6.8 V 0
~
!!
50 "- -
"
w
~
0
"ic 20 ......
...~ -.04
::>
Z 10
3.6 Y

~
~
:E
~ -.08
.G V I
{;J
5r-- "- 24V~
I 2
......
~ 1
G.O~

•
-.12
.01 .05 .1 .5 1 5 10 50 100 1.0 0.2 0.5 1 2 5 10 20 50 100
11 - ZENER CURRENT - mA Iz - ZENER CURRENT - mA

POWER DERATING VERSUS

AMBIENT TEMPERATURE
GOO
~
E
I 500
Z
0
!i0. 400 \
iii
is
300
ffi
~
~
fil
200
\
~
I 100

" 0 25 50 75 100 125 150 175

1\200
TA - AMBIENT TEMPERATURE _ °C

NOISE DENSITY MEASUREMENT CIRCUIT

1N4099 - 1N4121
1N4620 - 1N4627

r-----------,
I H B:OT~~=Y(+) SH~i~~ED I
I
I
SUPPLY
(LOW NOISE
E\ CIRCUIT
~I
I
I SOURCE) I

! ~ ~OAD ~ ~~~fC~I~NO~i
-l-:
I
I
lr-- -
A ~
-.J
L ___ - ___ J..-_ _-,\ AMPli.

FIER

FILTER I
TRUE
I 10 = 2 KHz
BP =1·3 KHz
VNOIU
RMS
VOLT
METER

4-15
 CURVE SET NUMBER 014
1 W ZENER

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE

TEMPERATURE COEFFICIENT DYNAMIC IMPEDANCE

VERSUS ZENER CURRENT VERSUS ZENER CURRENT
2 I ,.
500
.08 -f4:V
w 200
......
"-
.04
I U
~ 100
1\
6.8V- ........
~ SO
0 !
!l 20 .......
-.0
• ~~ "- .........
r-- 10 4.3 V

i"!"
4 I
.........
-.08 1:/
I 24V

-.1 2
.01
I
.05.1 .5 1 5 10 50100
1
1.0 0.2 0.5 1 2 5 10 20
...~
50 100
Iz - ZENER CURRENT - mA Iz - ZENER CURRENT _ mA

POWER DERATING VERSUS

AMBIENT TEMPERATURE
1.2

• '\
''\
• '\

'\.
25 50 75 100 125 150
'\
175 2DO
TA - AMBIENT TEMPERATURE _ °c

4-16
 CURVE SET NUMBER D 15
AIR-ISOLATED MONOLITHIC DIODE ARRAY

TYPICAL ELECTRICAL CHARACTERISTIC CURVES

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

FORWARD VOLTAGE CAPACITANCE VERSUS REVERSE RECOVER TIME

VERSUS FORWARD CURRENT REVERSE VOLTAGE VERSUS FORWARD CURRENT
4.0
!
I

!i ~':ff
8 -~

"
~ 3.6

H- ---r- ---I -
I II I I
c-

3.4 - -- - II
-~ -----..
/ / /
u 3.2 ---- -- y"'/ /':
. / 1/",.-....
o I f- I
! I
8 i o Ii'
20 40 60 10 50 500
-FORWARD CURRENT mA VR-RlVlRSLVOlrAGl-VOm FORWARD CURRENT

50

40

30
--1-
REVERSE CURRENT
VERSUS REVERSE VOLTAGE

--L
_1-_
I

t- I
--/-
or: l-
-
--
REVERSE CURRENT
VERSUS AMBIENT TEMPERATURE

•
-"
f-- y -"
I--
o
T- r-- -- ---

o 00 60 .(NJl7'::-5-_~50-.J'5:-LO---,125-----:L.:-::
100: -
11':-5--:':----'
VR-REVERSEVOLTAGE-VOllS
'A· AMBIENT TEMPERATURE C

TEST CIRCUITS

To measure reverse current of an individual diode, the following test circuits are used:

COMMON CATHODE DIODES COMMON ANODE DIODES

-SHUNT CURRENT

~HT

4-17
 CURVE SET NUMBER 015
AIR·ISOLATED MONOLITHIC DIODE ARRAY

TEST CIRCUITS
Test requirement for V FM and tfr is as shown below; all leads should be as short as possible.

INPUT CURRENT PULSE OUTPUT VOLTAGE PULSE

47 n

T;rL°%
500 mA

~ 10%
I I
I I
:

----. J-', = 10 ns
I :--_.--·f'

t" . REVERSE RECOVERY TIME TEST CIRCUIT

If = I,. I" = 0.1 I,

ANODE
BIAS
SUPPLY
I.47I"F

PULSE GENERATOR ":"

tr':5 5ns
TO OSCilLOSCOPE
ZIN=5On
P,W.= l,us
~ tr~ 0.4n5

ov-±U-
DUTY CYCLE = 2% ":" .1IlF liN = 500

-t-~--~-L------OmA
T ADJUST FOA fR IR

.<l.VF BRIDGE MATCHING CIRCUIT .<l.IR BRIDGE MATCHING CIRCUIT

T
lOTO l00Vdc
ADJUSTABLE

+
1
NOTES: NOTES:
1. R Varies depending on the current range. For the most often 1. VA2 ~ VAl ±1%.
used current ranges, R is as follows: 2. IR2 - 'Al = .6.IR (difference in fR between diodes 01 & 02).
. Current Range (amperes) A (ohms) To measure diodes 03 & 04, reverse cathode-anodeterminal
connections.
10-5 to 10-4 106
3. A is a center reading pico ammeter. AIR indicated directly on A.
10-4 to 10-3 10 5
10-3 to 10-2 104
or 10- n to 10- n +1 10"+1
2. V ,indicates mismatch of assembly.

4-18
 CURVE SET NUMBER 016
GENERAL PURPOSE 1 A RECTIFIER

REVERSE RECOVERY TIME TEST CIRCUIT

300±111%, (NON-INDUCTIVE)

30,25WPOT
~F 0.1 .F. 300 V r-----i
11.4~ ~ I TEKTRONIX
L _____ ..J 545 SCOPE WITH
53/54K PRE·AMPL
7...- - AND P-OOOD PROBE
+ ,;r
&1
FORWARO 1 2 \ "'i ,..DEVICE
3~ I
~
SUPPLY : : 30Vdc 117 V I CLARE RELAY ..;~UNDER
(30 mVRMS=== 1A 60 Hz
\3 TEST
MAX RIPPLE) - 10 kn t 2 W .-{
5 4 /
/ HGP1002
OR EQUIV.

6'--
VERT
REYERSE SUPPLY ..f"
T+ 1.F,300V
10,
10W
(0% RIPPLE SOURCE) 30 Ydc (NON·INDUCTIVE)
I DC SCOPE

'OR EQUIVALENT

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

INSTANTANEOUS FORWARD CURRENT

VERSUS INSTANTANEOUS
TYPICAL RECOVERY PATTERN FORWARD VOLTAGE
118k
10k

i 4k

r\ I-- -1,,- -I :! 2k
:::l
~ 1000
/'

ZERO
CURRENT
.\
1\ t lAM
L
/ '" ,/

+
i ::
.,~ 200 ./'
REFERENCE
\t 0.5 Amp :::l
:a 100
/'
t
--
Z 80
.... 40
ns
~ :
!
l 100 .7 0.8 0.9 1.0
V,-INSTANTANEOUS FORWARD VOLTAGE-V

RECTIFIED FORWARD CURRENT

VERSUS TEMPERATURE
1200

1
~ 1000
z
W
0:
0:
:::l
u
800 \
\
Q
w
u:: 600
tw \
0:
~ 400
1\
'"
0:
W
\
~ 200
I
:2
o
o 25 50 75 100 125
\
150 175 200

TA - AMBIENT TEMPERATURE - °c

4-19
 CURVE SET NUMBER 017
FAST RECOVERY 1 A RECTIFIER

REVERSE RECOVERY TIME TEST CIRCUIT

300±1O%, (NON-INDUCTIVE)

30,25WPOT
:: 0.1 "F, 300 V r------,
~1.~~. I TEKTRONIX

,
L _____ ...J 545 SCOPE WITH
53/54K PRE-AMPL
AND P-GOOD PROBE

T'~
0
FORWARO -_.±
SUPPLY -=- 30 Vd. ~
I I CLARE RELAY
DEVICE
~ ~UNDER

~
117 V
(30 mVRMs ===lA 60 Hz \ HGP1002 TEST
MAX RIPPLE) - 0-----./IIII"-
10 kn, 2 W
""
'~' I
5 4 /
OR EQUIV,
6 -

REVERSE SUPPLY 4-
T+ :~1 "F,300V
10,
lOW
VERT

I
(0% RIPPLE SOURCE) 30 Vd. (NON-INDUCTIVE) DC SCOPE

·OR EQUIVALENT

TYPICAL ELECTRICAL CHARACTERISTICS

AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED

INSTANTANEOUS FORWARD CURRENT

VERSUS INSTANTANEOUS
TYPICAL RECOVERY PATTERN FORWARD VOLTAGE

[\ I-- t - t r r - f-I
('\
1\ t 1/ V
. \ IRM /
ZERO
CURRENT +
REFERENCE
M. V 0.5 Amp

t
--- 40
ns
-+-

V,-INSTANTANEOUS FORWARD VOLTAGE-V

RECTIFIED FORWARD CURRENT

VERSUS TEMPERATURE
1200

'"
E
~ 1000
z
w
a:
a:
:>
u
800
1\
cw \
ii: 600
~w
a:
~ 400
1\
'a:"
w
:;: 200 ~
I
E
o
o 25 50 75 100 125
\150 175 200
TA - AMBIENT TEMPERATURE _ 'C

4-20
 CURVE SET NUMBER 018
MATCHED DIODE ASSEMBLY

a.
tAl 0OO2RADJUSTABLf
Il.VF elODE MATCHING CIRCUITS.

-fL
- - · · ',. _
"-1- -11--"
.- b.
-I
JL'
I·
lore l00Vdc
~N~l~~ ~~~~I~~NS 1l l
' 1

"=~7;- +~L
", I V
I I
+
FOR PUlSEVr MATCHED +

__ + __-,r
.,,,.,u,, . " _11_ -I j- "

FORWARD VOUAGE
IMBALANCE OBSERVED
ONOSCILLOSCOP£ M ~
:I~"! -

c. tr Pulse Rise Time (10 to 90% Amplitude) "" 1.0}Js Max

•
tf Pulse Fall Time (90 to 10% Amplitude) = 1.0 IJs Max
tw Pulse Width (500A. Amplitude) ~ 10 ± 2.0 lis
tt Transient Time =1.0JJsMin
10T0100Vdc
ADJUSTABLE
0' tp Period = 1.0 ms
1010100Vf'EAK
V Voltage Input to Circuit "A or SU = 10 to 100 V Adjustable
Il.VF Forward Voltage Difference
Between D'jodes
(Measured Between Tra"nsient Times) = As Specified

NOTES:
1. R varies depending on the current range. For the most often used current ranges, A is as follows:
Cu rrent A ange (amperes) R (ohms)

10- 5 to 10-4 106

10-4 to 10- 3 10 5
10- 3 to 10- 2 104
or 10- n to 10- n + 1 10n +l
2. The input voltage pulse conditions shown above are employed at Fairchild in testing. The user may deviate from the specific conditions above with no variation in results providing
the following general conditions are met:

•. ~.; 0.01
tp
b. tw<10ms
c. Transients occuring during pulse rise and fall times are ignored in observing ~VF.

Il.IR DIODE MATCHING CIRCUIT

} O~O,,"""""

NOTES:
1. VR2~ -VRl ±1%.
2. IA2 - IA1 = alA (difference in IR between two diodes under test).
3. A is a center reading pico ammeter.

4-21
 GLOSSARY OF SYMBOLS AND TERMS

BV Breakdown Voltage Ir Reverse Current

Figure 1 shows the reverse characteristic of a typical silicon diode. The peak value of reverse current which occurs immediately after
Breakdown voltage is generally the reverse voltage at a point be- switch-oil. The value of Ir is limited by the circuit, which determines
yond the "knee" of the reverse characteristic. In Figure I, the that rate at which stored charge can be dissipated. See Figure 3.
breakdown voltage is specified at a reverse current of IA2'
Irr Reverse Current
C Capacitance
The steady value of reverse current at equilibrium after switch-oil.
Diode capacitance is measured at a specified reverse voltage us- See Figure 3.
ing an a.c. signal of specified frequency. When capacitance is mea-
sured at VA = 0, this is sometimes denoted by the symbol Co.
IRAV Average Reverse Current
Cc Case Capacitance The average reverse current which flows when an a c voltage is
applied across a diode.
This is that part of a diode's total capacitance which is attributable
to the diode package.
IRM Reverse Recovery Current
fO Series Resonant Frequency The peak value of reverse current which flows immediately after
The frequency of oscillation of the tuned circuit formed by the ca- switching applied voltage from the forward to the reverse direction.
pacitance and inherent series inductance of the diode. lAM is the same as Ir' generally used for rectifiers.

IF

IF

If
Continuous Forward Current (Rating)
The maximum direct current that can be safely passed through a
diode in the forward direction.

Forward Current
The direct current passing through a diode in the forward direction.

Forward Current
IRX Reverse Current
lAX is the symbol used to denote the reverse current of a single
diode in an array at a time when all other diodes in the array are
passing forward current. It is a measure of cross-talk between
diodes.

IZ Zener Current
The reverse current which flows in a zener diode at a point beyond
•
the knee in the reverse characteristic. See Figure 2.
The forward current passing through a diode operated under
switching conditions. See Figure 3.
iZsurge Maximum Zener Surge Current
if Peak Repetitive Forward Current The maximum value of the peak point of a single cycle of current
that can safely be passed through a zener diode in the reverse di-
The maximum value of the peak point of a current that can safely be
rection. This is not a continuous rating.
passed through a diode in the forward direction. This is a continu-
ous (i.e. repetitive) rating.
IZM Maximum Zener Current
i'surge Peak Forward Surge Current The maximum value of direct current that can safely be passed
The maximum value of the peak point of a single cycle of current through a zener diode in the reverse direction.
that can safely be passed through a diode in the forward direction.
This is not a continuous rating. LS Series Inductance
Series inductance that is inherent in the construction of a diode,
IFSM Peak Forward Surge Current normally measured between two specified points on the diode
This rating is the same as if(surge) but i~ more generally applied to leads.
recllllers.
NO Noise Oensity
10 Average Rectified Current A measurement of the noise generated within a zener diode, both
The average value of the forward current passing through a diode; due to zener breakdown and internal resistance. Noise density,
as a rating, the maximum value of such current that can safely be measured in microvolts rms per square root cycle, can be used to
passed. calculate rms noise over any frequency range.

IR Reverse Current NF Noise Figure

The leakage current which flows in the reverse direction through a This is a ratio used to measure the noise generated within a diode.
diode when a reverse voltage is applied to the diode. Aeferring to The ratio used is total output noise compared to that part of output
Figure I, IR is usually measured at a specified reverse voltage at a noise due to input noise. This ratio, when multiplied by 1010910, is
point below the "knee" on the reverse characteristic. known as noise figure and is measured in decibels (dB)

5-3
 GLOSSARY OF SYMBOLS AND TERMS
o Figure of Merit TC Temperature Coefficient
Generally used as a measure of the "quality" of varactor diodes, Q, A coefficient which determines the variation of various parameters
the figure of merit, is defined as the ratio of energy stored to energy (e.g. Capacitance, Zener voltage, forward voltage) with tempera-
dissipated. ture. A subscript is often used to denote the parameter to which the
temperature coefficient refers.
Os Stored Charge
tfr Forward Recovery Time
The charge stored in a diode when passing current in the forward
direction. Stored charge is usually measured by switching the di- The time interval between the point at which a diode is turned on
ode off and measuring the area of the I versus t curve from switch- and the point at which the forward voltage comes to within 10% of
off to equilibrium. See Figure 3. its equilibrium level. See Figure 4.

RD Dynamic Resistance trr Reverse Recovery Time

Small signal resistance of a diode operating in the reverse direction The time interval between the point at which a diode is turned off
determined by the small signal or a c values of reverse current and and the point at which the reverse current comes to within 10% of
reverse voltage. This parameter is of particular importance in var- its equilibrium level. See Figure 3.
actor diodes.
VF Forward Voltage
r dlff Differential Resistance
The voltage applied across a diode in the forward direction (anode
Small signal resistance of a diode operating in the forward direction
more positive than cathode).
determined by the small signal or a c values of forward current and
forward voltage.
VFAV Average Forward Voltage
RE Rectification Efficiency The average value of forward voltage when current is being passed
The ratio of d c load voltage to peak r f input voltage to a detector. through a diode in the forward direction.

RS Series Resistance Vfr Forward Recovery Voltage

Small signal resistance of a diode operating in the forward direction The peak value of forward voltage reached immediately after
determined by the small signal or a c values of forward current and switch-on. The value of Vfr is limited by the circuit in which the di-
forward voltage. Same as rdiff. ode is operating.

REVERSE CHARACTERISTIC
ZENER [)jODE REVERSE CHARACTERISTIC

~
~

I
IR2+---------
I
~ 1R1+-------:=_+_ KNEE
II ~ ZENER CURRENT
"L-"",,~==:::::=~.....::.::K.EEl.::KNEE LEAKAGE CURRENT
VR - REVERSE VOlTAGE VR - REVERSE VOLTAGE

FIGURE t FIGURE 2

~ REVERSE RECOVERY CHARACTERISTIC

~

~D
FORWARD RECOVERY CHARACTERISTIC

rI , 1'----------
~
g
~
,...---....;...---1.
I
0
>

!
~
~ v.
~ 0
II
~g VR

,
FIGURE 3
> FIGURE 4

5-4
 GLOSSARY OF SYMBOLS AND TERMS
VFX Forward Voltage VRWM Working Peak Rever.e Voltage
VFX is the symbol used to denote the forward voltage of a single The maximum value of the peak point of a reverse voltage that can
diode in an array at a time when the condition of the other diodes in be safely applied to a diode. This is not a continuous rating and
the array is defined. It can be used as a measure of cross-talk be- does not include transient voltages.
tween diodes.
Vz Zener Voltage
VPK Peak Forward Voltage The reverse voltage across a zener diode at a point where zener
current is flowing. See Figure 2.
The peak value of forward voltage reached immediately aiter
switch-on. Same as Vfr. WIV Working Inver.e Voltage
The maximum reverse voltage at which a diode can be operated
VR dc Blocking Voltage Rating below the "knee" on the reverse characteristic. See Figure 1.
The continuous reverse voltage at which a rectifier can be safely
operated without going beyond the "knee" in the reverse character- Zz Zener Impedance
istic (Figure 1). The small signal impedance of a zener diode operating in the zener
region, determined by th.e small signal or a c values of zener cur-
VR Rever.e Voltage rent and zener voltage.
The voltage applied across a diode in the reverse direction (anode
ZZK Zener Knee Impedance
more negative than cathode).
Zener impedance measured at a defined point on the "knee" of the

•
zener characteristic (See Figure 2).
VRRM Peak Repetitive Rever.e Voltage
The maximum value 01 the peak point of a reverse voltage that can aiR Rever.e Current Match
be safely applied to a diode. This is a continuous (i.e. repetitive)
The difference in reverse current between any two diodes mea-
rating and includes all repetitive transient voltages.
sured under the same condition for each.

VRrms rms Rever.e Voltage aVF Forward Voltage Match

The maximum rms value of a reverse voltage that can be safely The difference in forward voltage between any two diodes mea-
applied to a diode. sured under the same conditions for each.

5-5
FAIRCHILD FIELD SALES OFFICES,
SALES REPRESENTATIVES AND
DISTRIBUTOR LOCATIONS
 FAIRCHILD FRANCHISED DISTRIBUTORS
UNITED STATES AND CANADA
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Tel 205-837-8700 TWX 810-726-2187
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I
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Tel: 714-279-2421 Tel 305-971-2900 TWX 510-954-9808 Friendship International Airport
Telex· HAMAVELEC SDG 69-5415 POBox 8647
HAMIL TON/AVNET ELECTRONICS Baltimore. Maryland 21240
INTERMARK ELECTRONICS INC 3197 Tech DrIVe, North
4040 Sorrento Valley Blvd St Petersburg. F!onda 33702 (shipping addressl
San Diego, California 92121 7235 Standard Drive
Tel: 714-279-5200 SCHWEBER ELECTRONICS Hanover. Maryland 21076
2830 North 28th Terrace Tel 301-796-5000 TWX 710-862-1861
INTERMARK ELECTRONIC INC Hollywood. Flonda 33020 Telex HAMAVLECA HNVE 87-968
1802 East Carnegie Avenue Tel· 305-927-0511 TWX 510-954-0304
Santa Ana, California 92705 PIONEER WASHINGTON ELECTRONICS. INC
Tel 714-540-1322 GEORGIA 9100 Gaither Road
ARROW ELECTRONICS Gaithersburg. Maryland 20760
LIBERTY ELECTRONICS 3406 Oak Cliff Road Tel 301-948-0710 TWX 710-828-9784
124 Maryland Streel DoraVille, Georgia 30340
EI Segundo, California 90245 Tel 404-455-4054 SCHWEBER ELECTRONICS
Tel: 213-322-8100 TWX· 910-348-7111 9218 Gaither Road
HAMIL TON/AVNET ELECTRONICS Gaithersburg. Maryland 20760
LIBERTY ELECTRONICS/SAN DIEGO 6700 Interstate 85 Access Road. SUite IE Tel 301-840-5900 TWX 710-828-0536
8248 Mercury Court Norcross, Georgia 30071
San Diego. Cllliforr"'.l8. 9211 I MASSACHUSETTS
Tel 404-448-0800
Tel: 714-565-9171 TWX· 910-335-1590 CRAMER ELECTRONICS
Telex None-use HAMAVLECB DAL 73-0511
85 Wells Avenue
(Regional Hq. In Dallas. Texas)
COLORADO Newton Centre, Massachusetts 02159
CENTURY elECTRONICS Tel 617-964-4000
LYKES ELECTRONICS CORP
8155 West 48th Avenue 6447 Allantlc Blvd
Wheatridge, Colorado 80033 GERBER ELECTRONICS
Norcross, Georgia 30071
Tel: 303-424-1985 TWX: 910-938-0393 852 PrOVidence Highway
Tel 404-449-9400
U.S Route 1
CRAMER elECTRONICS Dedhal"fl, Massachusetts 02026
ILLINOIS
5485 East Evans Place at Hudson Tel. 617-329-2400
HALLMARK ELECTRONICS INC
Denver, Colorado 80222 180 Crossen Avenue
Tel: 303-758-2100 Elk Grove Village, illinOIS 60007 HAMIL TON/AVNET ELECTRONICS
100 E Com merce Way
Tel. 312-437-8800
ELMAR ELECTRONICS Woburn, Massachusetts 01801
6777 E. 50th Avenue Tel· 617-933-8000 TWX: 710-332-1201
Commerce City, Colorado 80022
Tel: 303-287-9811 TWX: 910-938-0770

6-3
 FAIRCHILD FRANCHISED DISTRIBUTORS (Cont'd)
UNITED STATES AND CANADA
HAMil TQN/AVNET ELECTRONICS
HARVEY ELECTRONICS HAMil TON/AVNET ELECTRONICS
118 Weslpark Road
44 Hartwell Avenue 2450 Byalar Dnve S E
Dayton, Ohio 45459
LeKlngton, Massachusetts 02173 Albuquerque, New MexIco 87119
Tel 513-433-0610 TWX 810-450-2531
Tel 617-861-9200 TWX 710-326-6617 Tel 505- 765-1500
TWX' None - use 910-379-6486
PIONEER/CLEVELAND
SCHWEBER ELECTRONICS 'Regional Hq m Mt View. Ca
4800 E 131s1 Street
213 Third Avenue Cleveland, OhiO 44105
Waltham, Massachusetts 02154 NEW YORK
Tel 216-587-3600
Tel: 617-890-8484 ARROW ELECTRONICS
900 Broadhollow Road
PIONEER/DA YTON
MICHIGAN Farmingdale, New York 11735
1900 Troy Street
HAMIL TON/AVNET ELECTRONICS Tet 516-694-6800
Dayton. OhiO 45404
32487 Schoolcraft Tel 513-236·9900 TWX 810·459·1622
livonia. Michigan 48150 CRAMER ELECTRONICS
Tel. 313-522-4700 TWX. 810-242-8775 129 Oser Avenue
SCHWEBER ELECTRONICS
Hauppauge. New York 11787
23880 Commerce Park Road
PIONEER/DETROIT Tel. 516-231-5682
Beachwood, OhiO 44122
13485 Stamford Tel' 216-464-2970 TWX 810-427·9441
Livonia, Michigan 48150 CRAMER ELECTRONICS
Tel. 313-525-1800 6716 Joy Road
SHERIDAN/CLEVELAND
E Syracuse, New York 13057
Unit 28
R-M ELECTRONICS Tel' 315-437-6671
Versaplex Bldg
4310 Roger B Chaffee
701 Beta Drive
Wyoming. Michigan 49508 COMPONENTS PLUS, INC
Cleveland. OhIO 44143
Tel' 616-531-9300 40 Oser Avenue
Tel 216-461-3300 TWX' 810·427-2957
Hauppauge, LI.. New York 11787
SCHWEBER ELECTRONICS Tel: 516-231-9200 TWX' 510-227-9869
SHERIDAN SALES CO
33540 Schoolcralt
'mallmg address
livonia, Michigan 48150 HAMIL TON/AVNET ELECTRONICS
POBox 37826
Tel: 313-525-8100 167 Clay Road
Crnclnnatl. OhiO 45222
Rochester, New. York 14623
IS hipping address
SHERIDAN SALES CO Tel: 716-442-7820
10 Knollcrest Drive
24543 Indoplex Drrve TWX: None -use 710-332-1201
Reading, OhiO 45237
Farmington, Michigan 48024 I Regional Hq. in Burlington, Ma I
Tel 513-761-5432 TWX' 810-461-2670
Tel: 313-477.3800
HAMIL TON/AVNET ELECTRONICS
SHERIDAN SALES COMPANY
MINNESOTA 6500 Joy Road
2501 Neff Road
HAMIL TON/AVNET elECTRONICS E. Syracuse, New York 13057
Tel: 315-437-2642 TWX 710-541-0959 Dayton, OhiO 45414
7449 Cahill Road Tel' 513-223-3332 TWX 810-459-1732
Edina, Minnesota 55435
Tel 612-941-3801 HAMIL TON/AVNET ELECTRONICS
70 State Street OKLAHOMA
TWX: None -use 910-227-0060
Westbury. U .. New York 11590 HALLMARK ELECTRONICS
I Regional Hq in Chicago, It I. I
Tel' 516-333-5800 TWX 510-222-8237 4846 S 83rd East Avenue
Tulsa, Oklahoma 74145
SCHWEBER ELECTRONICS
ROCHESTER RADIO SUPPL Y CO , INC Tel. 918-835-8458 TWX 910-845-2290
7402 Washington Avenue S.
Eden Prairie, Minnesota 55344 140 W. Main Street
I P.O. Box 1971, Rochester. New York 14603
RADIO INC INDUSTRIAL ELECTRONICS
Tel: 612-941-5280
Tel: 716-454-7800 1000 S. Main
Tulsa, Oklahoma 74119
SEMICONDUCTOR SPECIALISTS, INC Tel: 918-587~9123
8030 Cedar Avenue S SCHWEBER ELECTRONICS
Mmneapolis, Minnesota 55420 Jencho Turnpike PENNSYLVANIA
Tel. 612-854-8841 TWX' 910-576-2812 Westbury, L I., New York 11590 HALLMARK ELECTRONICS, INC
Tel' 516-33,~-7474 TWX: 510-222-3660 458 Pike Road
MISSOURI Huntingdon Valley, Pennsylvania 19006
HALLMARK ELECTRONICS, INC, SCHWEBER ELECTRONICS, INC Tel: 215~355-7300 TWX. 510-667-1727
13789 RIder Trail 2 Town line Circle
Earth City, MISSOUri 63045 Rochester, New York 14623 PIONEER/DELEWARE VALLEY ELECTRONICS
Tel: 314-291-5350 Tel. 716-461-4000 141 Gibraltar Road
Horsham, Pennsylvania 19044
HAMIL TON/AVNET ELECTRONICS JACO ELECTRONICS, INC. Tel. 215-674-4000 TWX 510-665-6778
396 Brookes Lane 145 Oser Avenue
Hazelwood, Missouri 63042 Hauppauge. LI., New York 11787 PIONEER ELECTRONICS, INC.
Tel: 314-731-1144 TWX: 910-762-0606 Tel: 516-273-1234 TWX' 510-227~6232 560 Alpha Drive
Pittsburgh, Pennsylvania 15238
NEW JERSEY SUMMIT DISTRIBUTORS, INC Tel' 412-782-2300 TWX: 710-795-3122
HAMIL TON/AVNET ELECTRONICS 916 Main Street
218 Little Falls Road Buffalo, New York 14202 SCHWEBEA ELECTRONICS
Cedar Grove, New Jersey 07009 Tel' 716-884-3450 TWX: 710-522~1692 101 Rock Road
Tel: 201-239-0800 TWX: 710-994-5787 Horsham, Pennsylvania 19044
NORTH CAROLINA Tel: 215-441-0600
HAMIL TON/AVNET ELECTRONICS CRAMER ELECTRONICS
113 Gaither Drive 938 Burke Street SHERIDAN SALES COMPANY
East Gate I ndustrial Park Winston Salem, North Carolina 27102 4297 Greensburgh Pike
Mt. Laurel, N.J. 08057 Tel: 919-725-8711 SUIte 3114
Tel: 609-234-2133 TWX: 710-897-1405 Pittsburgh, Pennsylvania 15221
HAMIL TON/AVNET Tel: 412-351-4000
SCHWEBER ELECTRONICS 2803 Industrial Drive
43 Belmont Drive Raleigh, North Carolina 27609 SOUTH CAROLINA
Somerset, N.J. 08873 Tel: 919-829-8030 DIXIE ELECTRONICS, INC
Tel: 201-469-6008 TWX' 710-480-4733 P.O. Box 408 (lip Code 29202)
HALLMARK ELECTRONICS
1208 Front Street, Bldg. K 1900 Barnwell Street
STERLING ELECTRONICS
Raleigh, North Carolina 27609 Columbia, South Carolina 29201
774 Pfeiffer Blvd.
Tel: 919-823-4465 TWX: 510~928-1831 Tet 803-779-5332
Perth Amboy, N,J. 08861
Tel: 201-442-8000 Telex: 138-679
RESCO TEXAS
Highway 70 West ALLIED ELECTRONICS
WILSHIRE ELECTRONICS
Rural Route 8, P.O, Box 116-B 401 E. 8th Street
102 Gaither Dnve
Raleigh, North Carolina 27612 Fort Worth, Texas 76102
Mt. Laurel, N.J. 08057
Tel' 817-336-5401
Tel: 215-627-1920 Tel: 919-781-5700

PIONEER/CAROLINA ELECTRONICS CRAMER ELECTRONICS

WILSHIRE ELECTRONICS
103 Industrial Drive 13740 Midway Road, SUite 700
1111 Paulison Avenue
Greensboro, North Carolina 27406 DaUas, Texas 75240
Clifton, N.J. 07011
Tet: 919-273-4441 Tel: 214-661-9300
Tel: 201-365-2600 TWX: 710-989-7052
HALLMARK ELECTRONICS CORP
NEW MEXICO OHIO
HAMILTON/AVNET ELECTRONICS 10109 McKalia Place Suite F
CENTURY ELECTRONICS
761 Beta Drive, Suite E Austin, Texas 78758
11728 linn Avenue
Cleveland, Ohio 44143 Tel' 512-837-2614
Albuquerque. New Mexico 87123
Tel: 505-292-2700 TWX: 8tO-88lJ..(l825 Tel: 218-461-1400
TWX: None - use 910-227-0060 HALLMARK ELECTRONICS
(Regional Hq. in Chicago, III.) 9333 Forest Lane
Dallas, Tex.s 75231
Tel: 214-234-7300

6-4
 FAIRCHILD FRANCHISED DISTRIBUTORS (Cont'd)
UNITED STATES AND CANADA
HALLMARK ELECTRONICS, INC CAM GAAD SUPPL Y L TO
8000 Westglen Rookwood Avenue
Houston, Texas 77063 Fredericton, New Brunswick E3B 4Y9, Canada
Tel. 713-781-6100 Tel 506-455-8891

HAMIL TON/AVNET ELECTRONICS CAM GAAD SUPPL Y L TO

4445 Sigma Road , 5 Mount Royal Blvd
Dallas, Texas 75240 MoncIon, New Brunswick, EtC 8N6. Canada
Tel: 214-661-8661 Tel. 506-855-2200
Telex: HAMAVLECB DAL 73-0511
CAM GARD SUPPLY L TO
HAMIL TQNJAVNET ELECTRONICS 3065 Robie Street
3939 Ann Arbor Halifax, Nova Scotia, 83K 4P6, Canada
Houston, Texas 17042 Tet: 902-454-8581 Telex: 01-921528
Tet: 713-780-1771
Telex: HAMAVlECB HOU 76-2589 CAM GARD SUPPL Y L TO
1303 Scarlh Street
SCHWEBER ELECTRONICS. INC Regina, Saskatchewan, S4R 2E7, Canada
14177 Proton Road Tel: 306~525-1317 Telex' 07-12667
Dallas, Texas 75240
Tel: 214-661-5010 TWX: 910~860-5493 CAM GARD SUPPLY lTD
1501 Ontario Avenue
SCHWEBER ELECTRONICS, INC Saskatoon, Saskatchewan, S7K lS7, Canada
7420 Harwln Drive Tel: 306-652-6424 Telex: 07-42825
Houston, Texas 77036
Tel: 713-784-3600 TWX: 9'O~881-1109 ELECTRO SONIC INDUSTRIAL SALES
(TORONTO) LTD
STERLING ELECTRONICS 1100 Gordon Baker Rd
4201 Southwest Freeway Willowdale, Ontario, M2H 383, Canada
Houston, Texas 77027 Tel: 416-494-'666
Tel: 713-627-9800 TWX: 901-881-5042 Telex: ESSCO TOR 06-22030
Telex: STELECO HOUA 77-5299
FUTURE ELECTRONICS CORPORATION
UTAH 130 Albert Street
CENTURY ELECTRONICS Ottawa, Ontario, KIP 5G4, Canada
2258 S, 2700 West Tel: 613-232-7757
Salt Lake City, Utah 64119
Tel: 801-972-6969 TWX: 910-925-5686 FUTURE ELECTRONICS CORPORATION
44 Fasket Drive, Unit 24
HAMIL TON/AVNET ELECTRONICS Rexdale, Ontario, M9W 1K5, Canada
1585 W. 2100 South Tel: 416-677-7820

I
Salt Lake City, Utah 84119
Tel: 801-972-2800 FUTURE ELECTRONICS CORPORATION
TWX: None -use 910-379-6486 5647 Ferrier Street
(Regional Hq. in Mt. View, CaJ Montreal, Quebec, H4P 2K5, Canada
Tel: 514-735-5775
WASHINGTON
HAMIL TON/AVNET ELECTRONICS HAMIL TON/AVNET INTERNATIONAL
13407 Northrup Way (CANADA) LTD.
Bellevue, Washington 98005 6291 Dorman Rd" Unit 16
Tet: 206-746-8750 TWX: 910-443-2449 Misslssauga, Ontario. L4V lH2, Canada
Tel: 416-677-7432 TWX: 610-492-8867
LIBERTY ELECTRONICS
1750 132nd Avenue N E HAMIL TON/AVNET INTERNATIONAL
Bellevue, Washington 98005 (CANADA) LTD
Tel: 206-453-8300 TWX: 910-444-1379 1735 Courtwood Crescent
Ottawa, Ontario, K1Z 5L9, Canada
RADAR ELECTRONIC CO., INC. Tel: 613-226-1700
168 Western Avenue W
Seattle, Washington 98119 HAMIL TON/AVNET INTERNATIONAL
Tel: 206-262-2511 TWX: 910-444-2052 (CANADA) lTD
2670 Paulus Street
WISCONSIN SI. Laurent, Quebec, H4S lG2, Canada
HAMIL TON/AVNET ELECTRONICS Tel: 514-331-6443 TWX: 610-421-3731
2975 Moorland Road
New Berlin, Wisconsin 53151 RAE, INDUSTRIAL ELECTRONICS, LTD
Tel: 414-764~4510 1629 Main Street
Vancouver, British Columbia, V6A 2W5, Canada
MARS~> ELECTRONICS, INC Tel: 604-687-2621 TWX: 610-929-3065
156~ S. 100 Street Telex: RAE-VCR 04-54550
Milwaukee, Wisconsin 53214
Tel: 414-475-6000 SEMAD ELECTRONICS L TO
625 Marshall Ave .. Suite 2
CANADA Oorllal, Quebec. H9P lEI, Canada
CAM GARO SUPPLY LTD Tel:·514-636-4614 TWX: 610-422-3048
640 42nd Allenue S.E
Calgary, Alberta, T2G lY6, Canada SEMAO ELECTRONICS lTD
Tel: 403-287-0520 Telex: 03-822811 1111 Finch Allenue W., Suite 102
Oownsview, Ontario, M3J 2E5, Canada
CAM GARD SUPPLY lTD Tel: 416-635-9880 TWX: 610-492-2510
10505 l11th Street
Edmonton, Alberta T5H 3E8, Canada SEMAO ELECTRONICS L TO.
Tel: 403-426-1805 Telex: 03-72960 1485 laperriere Avenue
Ottawa, OntariO, K1Z 7S8, Canada
CAM GARD SUPPLY LTD. Tel: 613-722-6571 TWX: 610-562-8966
4910 52nd Street
Red Deer, Alberta, T4N 2C8, Canada
Tel: 403-346-2088

CAM GAAO SUPPLY lTD.

825 Notre Dame Orille
Kamloops, British COlumbia, V2C 5N8, Canada
Tel: 604-372·3338

CAM GARD SUPPLY LTD.

1777 Ellice Allenue
Winnepeg, Manitoba, R3H OW5, Canada
Tel: 204-786-8-401 Telex: 07-57822

6-5
 FAIRCHILD SALES REPRESENTATIVES
UNITED STATES AND CANADA
ALABAMA MINNESOTA CARTWRIGHT & BEAN INC
CARTWRIGHT & BEAN. INC PSI COMPANY 8705 UnIcorn Ofl~P.
2400 Bob Wallace Ava, SUite 201 720 W 94th Street SUIte 8120
Huntsville, Alabama 35805 Minneapolis. Minnesota 55420 KnoH'IIip- Tennessee 37919
Tel 205-533-3509 Tel 612-884-1777 TWX 910-576-3483 Tel 615-693-7450

CALIFORNIA MISSISSIPPI TEXAS

GEL TEG COMPANY CARTWRIGHT & BEAN. INC TECHNICAL MARKETING
18009 Sky Park Circle SUite B PO BOil 16728 3320 Wiley Post Road
IrVine, California 92715 5150 Keele Street Charroilton, Tellas 75220
Tel 714-557-5021 TWX 910-595-2512 Jackson. MISSISSIPPI 39206 Tel 214-387-3601 TWX 910-860-5158
Tel 601-981-1368
GEL Te COMPANY TECHNICAL MARKETING
7867 Convoy Court. SUite 312 MISSOURI 6430 Hilicrolt SUite 104
San Diego, California 92111 B,C ELECTRONIC SALES. INC Houston, Tellas 77036
Tel- 714-279-7961 TWX 910-335-1512 300 Brookes Drive, SUite 206 Tei 713-777-9228
Hazelwood, MISSOUfi 63042
MAGNA SALES, INC Tel: 314-731-1255 TWX' 910-762-0600 UTAH
3333 Bowers Avenue SIMPSON ASSOCIATES, INC
SUIte 295 NEW JERSEY PO BOil 151430
Santa Clara, Cahfornla 95051 LORAC SALES, INC Salt Lake City, Utah 84115
Tel. 408-985-1750 TWX 910-338-0241 580 Valley Aoad Tel 801-571-7877
Wayne, New Jersey 07470
COLORADO Tel: 201-696-8875 TWX' 710-988-5846 WASHINGTON
SIMPSON ASSOCIATES, INC QUADRA CORPORATION
2552 Ridge Road NEW YORK 14825 N E 40th Street
ltttieton, Colorado 80120 LORAC SALES, INC SUite 340
Tel: 303-794-8381 TWX: 910-935-0719 550 Old Country Road, Room 410 Redmond, Washington 98052
Hicksville, New York 11801 Tel' 206-883-3550 TWX 910-449-2592
CONNECTICUT Tel: 516-681-8746 TWX' 510-224-6480
PHOENIX SALES COMPANY WISCONSIN
389 Main Street TRI-TECH ELECTRONICS, INC LARSEN ASSOCIATES
Ridgefield, Connecticut 06877 3215 E Main Street 10855 West Potter Aoad
Tel' 203-438-9644 TWX: 710-467-0662 Endwell, New York 13760 Wauwatosa, Wisconsin 53226
Tel: 607-754-1094 TWX' 510-252-0891 Tel: 414-258-0529 TWX 910-262-3160
FLORIDA
LECTROMECH, INC TRI-TECH ELECTRONICS, INC. CANADA
303 Whooping Loop 590 Pennton Hills Office Park A N LONGMAN SALES, INC IL S Ii
Altamonte Springs, Flonda 32701 Fairport, New York 14450 1715 Neyerside Drive
Tel 305-831-1577 TWX: 810-853-0262 Tel' 716-223-5720 Suite 1
Mlsslssauga. OntariO, L5T 1C5 Canada
LECTROMECH. INC. TAl-TECH ELECTRONICS, INC Tel 416-625-6770 TWX. 610-492-8976
2741 North 29th Avenue, Suite 218 6836 E. Genesee Street
Hollywood, Florida 33020 Fayetteville, New York 13066 A N LONGMAN SALES, INC IL S Ii
Tel: 305-920-2291 TWX: 510-954-9793 Tel 315-446-2881 TWX 710-541-0604 16891 Hymus Blvd
Kirkland. Quebec
LECTROMECH. INC. TRI-TECH ELECTRONICS, INC H9H 3L4 Canada
2280 U.S. Highway 19 North 19 DaVIS Avenue Tel 514-694-3911
SUite 119 Bldg L Poughkeepsie, New York 12603 TWX' 610-422-3028
Clearwater, Flonda 33515 Tel: 914-473-3880
Tel: 813-726-0541
NORTH CAROLINA
GEORGIA OARTWRIGHT & BEAN, INC
CARTWRIGHT & BEAN, INC 1165 CommerCial Ave
P.O. Box 52846 IZlp Code 303551 Charlotte, North Carolina 28205
90 W. Wieuca Square, Suite 155 Tel: 704-377-5673
Allanta, Georgia 30342
Tel: 404-255-5262 TWX 810-751-3220 CARTWRIGHT & BEAN. INC
POBox 18465
ILLINOIS 3948 Browning Place
MICRO SALES, INC Raleigh, North Carolina 27609
2258-B Landmeir Road Tel: 919-781-6560
Elk Grove Village, IllinOIS 60007
Tel' 312-956-1000 TWX, 910-222-1833 OHIO
THE LYONS CORPORATION
INDIANA 4812 Frederick Aoad, Suite 105
lESLIE M DEVOE COMPANY Dayton. Ohio 45414
4215 E 82nd Street Suite 0 Tel' 513-278-0714
Indianapolis, Indiana 46250
Tel' 317-842-3245 TWX: 810-260-1435 THE LYONS CORPORATION
6151 Wilson Mills Road, SUIte 101
KANSAS Highland Heights. Ohio 44143
B C. ELECTRONIC SALES, INC Tel: 216-461-8288
PO. Box 12485, Zip 66212
8190 Nieman Road OKLAHOMA
Shawnee Mission, Kansas 66214 TECHNICAL MARKETING
Tel: 913-888-6680 TWX: 910-749-6414 9717 E. 42nd Street, Suite 221
Tulsa, Oklahoma 74101
B.C, ELECTRONIC SALES Tel: 918-622-5984
6405 E. Kellogg
Suite 14 OREGON
Wichita, Kansas 67207 QUADRA CORPORATION
Tel: 316-684-0051 19145 S.W. Murphy Ct.
Aloha, Oregon 97005
MARYLAND Tel: 503-225-0350 TWX: 910-449-2592
DELTA III ASSOCIAtES
1000 Century Plaza Suite 225 PENNSYLVANIA
Columbia, Maryland 21044 BGR ASSOCIATES
Tel: 301-730-1510 TWX; 710-828-9654 2500 Office Center
2500 Maryland Road
MASSACHUSETTS Willow Grove, Pennsylvania 19090
SPECTRUM ASSOCIATES, INC. Tel: 215~657-3301
888 Worcester Street
WelleSley, Massachusetts 021'81 TENNESSEE
Tel: 617-237-2796 TWX: 710-348-0424 CARTWRIGHT & BEAN, INC.
P.O. Box 4760
MICHIQAN 560 S. Cooper Street
RATHSBURG ASSOCIATES Memphis, Tennessee 38104
16621 E. Warren Avenue Tel: 901-278-4442
Detroit, Michigan 48224
Tel: 313-882-1717 Telex: 23-5229

6-6
 FAIRCHILD SALES OFFICES
UNITED STATES AND CANADA
ALABAMA INDIANA NEW MEXICO
Huntsville Office Ft Wayne Office Alburquerque Oilice
Execuilve Plaza 2118 Inwood DrIVe 46805 2403 San Maleo N E 87 I 10
SUite 107 Suite ,,, PlaIa 13
4717 University Drive, N W Tel' 219-483-6453 TWX' 810-332-1507 Tel 505-265-5601 TWX 910-379·64.35
Huntsville, Alabama 35805
Tel: 205-837-8906 I ndi'anapolis Office NEW VORK
Room 205 Melville Ollice
ARllONA 7202 N. Sl'1adeland 46250 275 8roadhollow Road 11746
Phoenix Office Tel. 317-849-5412 TWX 810-260-1793 Tel' 516-293-2900 TWX 510·224-6480
4414 N 19th Avenue 85015
Suite G KANSAS PoughkeepSie Office
Tel- 602-264-4946 TWX' 910-951-1544 Kansas Clly Olfice 19 DaVIS Avenue 12603
Corporate Woods I Tel' 914-473-5730 TWX 510-248-0030
CALIFORNIA 10875 Grandview,'SUIte 2255
Los Angeles Ollice" Overland Park 66'210 Fairport Office
Crocker Bank Bldg Tel: 913-649-3974 260 Permton Hills Office Park
15760 Ventura Blvd. SUite 1027 Fairport 14450
Encino 91436 MARYLAND Tet: 716-223-7700
Tel- 213-990-9800 TWX: 910-495-1776 Columbia Office'
1000 Century Plaza OHIO
Santa Ana Office" Suite 225 Dayton Office
2101 E_ 4th Street 92705 Columbia. Maryland 21044 4812 Frederick Road 45414
Bldg_ B, Suite 185 Tel: 301~730-1510 TWX: 710-826-9654 Suite 105
TeJ: 714-558-1881 TWX: 910-595-1109 Tel: 513-278-8278 TWX. 810-459-180~
MASSACHUSETTS
Santa Clara Oltlce" Boslon Office" PENNSYLVANIA
3333 Bowers A. . enue 888 Worcester Street Philadelphia Office
Suite 299 Wellesley Hills 02181 2500 Office Center
Santa Clara, 95051 Tel: 617-237-3400 TWX: 710-348-0424 2500 Maryland Road
Tel: 408-987-9530 TWX: 910-338-0241 Willow Grove, Pennsylvania 19090
MICHIGAN Tel: 215-657-2711
FLORIDA Detroit Olllce"
Ft. lauderdale Office Johnston Building, Suite 24 TEXAS
Executi .... e Plaza 20793 Farmington Road Dallas Office
Suite 300-B Farmington Hills 48024 13771 N Central Expressway 75231
1001 Northwest 62nd Street Tel: 313-478-7400 TWX: 810-242-2973 SUite 809
Ft. lauderdale, Florida 33309 Tel: 214-234-3391 TWX: 910-867-4757
Tel: 305-771-0320 TWX: 510-955-4098 MINNESOTA
Minneapolis Office" Houston Office
Orlando Office" 7600 Parklawn Avenue 6430 Hillcroft 77081

I
Crane's Roost Office Park Room 251 SUite 102
303 Whooping loop Edina 55435 Tel: 713-771-3547 TWX: 910-881-8278
Altamonte Springs 32701 Tel: 612-835-3322 TWX: 910-576-2944
Tel: 305-834-7000 TWX: 810-850-0152 NEW JERSEY CANADA
Toronto Regional Office
Wayne Office"
ILLINOIS Fairchild Semiconductor
580 Valley Road 07490
Chicago Office 1590 Matheson Blvd., Unit 26
Suite 1
The Tower - Suite 610 Tel: 201-696-7070 TWX: 710-988-5846 Mlssissauga, Ontario l4W lJl, Canada
Rolling Meadows 60008 Tel: 416-625-7070 TWX: 610-492-4311
Tel: 312-640-1000

·Field Application Engineer

6-7
 FAIRCHILO SALES OFFICES
INTERNATIONAL
AUSTRALIA Fairchild Camera and Instrument (Deutschland) MEXICO
Fairchild Australia Ply Ltd. Postrstrasse 37 Fairchild Mexicana S.A.
72 Whiting Street Blvd. Adolofo Lopez Mateos No. 163
7251 Leonberg
Art.fmon 2064 W-Germany Mexico 19, O.F.
New South Wales Tel: 0715241026 Telex: 07 245711 Tel: 905-563-5411 Telex: 017-71-038
Australia
SCANDINAVIA
Tel' Sydney (021-438-2733 Fairchild Camera and Instrument !Deutschland) Fairchild Semiconductor AB
Waldluststrasse 1 Svartengsgatan 6
l mailing addresS! 8500 Nuernberg S-11620 Stockholm
P.O. Box 450 W-Germany Sweden
North Sydney 2060 Tel: 0911 407005 Telex: 06 23665 Tel: 8-449255 Telex: 17759
New South Wales
Australia HONG KONG SINGAPORE
Fairchild Semiconductor (HK) Ltd. Fairchild Semiconductor Pty Ltd.
AUSTRIA AND EASTERN EUROPE 135 Hoi Bun Road No. 11, Lorong 3
Fairchild Electronics Kwun Tong Toa Payoh
A-l010 Wien Kowloon, Hong Kong Singapore 12
Schwedenptatz 2 Tel; K-890271 Telex: HKG-531 Tel: 531-068 Telex: FAIRSIN-RS 21376
Tel: 0222635821 Telex: 75096
ITALY TAIWAN
BRAZIL Fairchild Semiconduttori, S.P.A. Fairchild Semiconductor (Taiwan) Ltd.
Fairchild Semicondulores Ltda Via Flamenia Vecchia 653 Hsietsu Bldg., Room 502
Calxe Postal 30407 00191 Roma, Italy 47 Chung Shan North Road
Au. A18g0as, 663 Tel: 06 327 4006 Telex: 63046 (FAIR AOM) Sec. 3 Taipei, Taiwan
01242 Sao Paulo, Brazil Tel: 573205 thru 5732C7
Tel: 86-9092 Telex: 011-23831 Fairchild Semiconduttori S,P.A.
Cable: FAIRLEe Via ftosellini, 12 BENELUX
20124 Milano, Italy Fairchild Semiconductor
FRANCE Tel: 0268874 51 Telex' 36522 Paradijslaan 39
Fairchild Carner. & Instrument SA Eindhoven, Holland
121, Avenue d'ilalie JAPAN Tel: 00-31-40-446909 Telex: 00-1451024
75013 Paris, France Fairchild Japan Corporation
Tel: 331-584-5566 Pole Bldg. UNITED KINGDOM
Telex: 0042 200614 or 260937 1-15-21, Shlbuya Fairchild Camera and Instrument (UK) Ltd.
Shibuya-Ku, Tokyo 150 Semiconductor Olvision
GERMANY Japan 230 High Street
Fairchild Carner. and Instrument (Deutschlandl Tel: 03 400 8351 Telex: 242173 Potters Bar
Daimlers!r 15 Hertfordshire EN6 5BU
8046 Garching Hochbruck KOREA England
Munich, Germany Fairchild Semikor Ltd. Tel: 0707 51111 Telex: 262635
Tel: (089) 320031 Telex: 524831 fair d K2 219-6 Gari Bong Dong
Young Dung Po-Ku Fairchild Semiconductor Ltd.
Fairchild Camera and Instrument !Deutschland~
Seoul 150-06, Korea 17 Victoria Street
Koenigsworther Strasse 23 Tel: 85·0067 Telex: FAIRKOR 22705 Craigshill
3000 Hannover Livingston
W·Germany (mailing address) West Lothian, Scotland - EHS4 5BG
Tel: 0511 17844 Telex: 09 22922 Central P.O. Box 2806 Tel: Livingston 0506 32691 Telex: 72629

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