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The document is an assignment sheet from an Electronics and Communication Engineering course. It contains 5 questions related to calculating currents and voltages in electronic circuits involving PN junctions, diodes, and resistors. Students are instructed to submit handwritten and soft copy PDF solutions by December 30th, with the file name formatted as their roll number. The assignment is out of a maximum of 30 marks.

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24 views2 pages

Ass 1

The document is an assignment sheet from an Electronics and Communication Engineering course. It contains 5 questions related to calculating currents and voltages in electronic circuits involving PN junctions, diodes, and resistors. Students are instructed to submit handwritten and soft copy PDF solutions by December 30th, with the file name formatted as their roll number. The assignment is out of a maximum of 30 marks.

Uploaded by

Prathibha Cvr
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INDIAN INSTITUTE OF INFORMATION TECHNOLOGY KOTTAYAM

Department of Electronics and Communication Engineering


IEC 111 ELECTRONIC CIRCUITS & MEASUREMENTS
Assignment 1, Dec 22, 2022

Course Instructors: Dr. Narendra Kumar Reddy/Dr. Rajesh G/ Dr. Lidiya Lilly Thampi
Max marks: 30
Submit a hard copy and upload the soft copy (.pdf) in LMS on or before 30-12-2022
Give the soft copy filename “rollnumber.pdf” (example: 2022BCS0001.pdf)

1. Calculate IS and the current I for V = 750 mV for a pn junction for which NA = (6)
1017 /cm3 , ND = 1016 /cm3 , A = 100µm2 , ni = 1.5 × 1010 /cm3 , Lp = 5µm, Ln = 10µm,
Dp = 10cm2 /s and Dn = 18cm2 /s.

2. A p+ n junction is one in which the doping concentration in the p region is much greater (6)
than that in the n region. In such a junction, the forward current is mostly due to hole
injection across the junction. Show that
Dp
I ≃ Ip = Aqn2i eV /VT − 1

Lp ND
For the specific case in which ND = 1017 /cm3 , Dp = 10/cm2 /s, Lp = 10µm and A =
104 µm2 find IS and the voltage V obtained when I = 1 mA. Assume operation at 300 K
where ni = 1.5 × 1010 /cm3 .
3. Determine vo for the network of figure shown below. (6)

4. Determine Vo for the configurations shown below. Assume cut-in voltage, VON of Silicon (6)
diode is 0.7V and that of Germanium diode is 0.3V.

1
5. (a) Determine VL , IL , IZ and IR for the network of figure shown below if (i) RL = 180Ω (6)
(ii) RL = 470Ω.
(b) Determine the value of RL that will establish maximum power conditions for the
Zener diode.
(c) Determine the minimum value of RL to ensure that the Zener diode is in the “on”
state.

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