AO6402A

30V N-Channel MOSFET

General Description Product Summary

The AO6402A uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This ID = 7.5A (VGS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 24mΩ (VGS = 10V)
applications. The source leads are separated to allow RDS(ON) < 35mΩ (VGS = 4.5V)
a Kelvin connection to the source, which may be
used to bypass the source inductance.

TSOP6
Top View Bottom View D
Top View

D 1 6 D
D 2 5 D

G 3 4 S G

S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 7.5
Current A,F TA=70°C ID 6.0 A
B
Pulsed Drain Current IDM 64
TA=25°C 2.0
PD W
Power Dissipation TA=70°C 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 54 68 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO6402A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=7.5A 17.3 24
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 25 34
VGS=4.5V, ID=5.6A 25 35 mΩ
gFS Forward Transconductance VDS=5V, ID=7.5A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.2 11 nC
Qg(4.5V) Total Gate Charge 3.5 5 nC
VGS=10V, VDS=15V, ID=7.5A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4.5 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2Ω, 2.7 4.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.9 23 ns
tf Turn-Off Fall Time 2.9 5.5 ns
trr Body Diode Reverse Recovery Time IF=7.5A, dI/dt=100A/µs 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 4.5 5.4 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev4: April. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO6402A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
10V 6V
50
12 VDS=5V VDS=5V

40
4.5V 9
ID (A)

ID(A)
30
6
20 VGS=3.5V 125°C 125°C 25°C

10 3
25°

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

45 67
1.8
41
40 1.2 1.8
Normalized On-Resistance

1.6 VGS=10V
VGS=4.5V
Id=7.5A
35
1.4 11
Ω)
RDS(ON) (mΩ

30 5
1.2
25
1
20 VGS=4.5V
Id=5.6A 4.5
15 0.8
VGS=10V 23
10 0.6 5.5
0 5 10 15 20 0 25 50 75 10.5
100 125 12.6
150 175
ID (A) 4.5
Temperature (°C) 5.4
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01

ID=7.5A
50 1.0E+00

1.0E-01
Ω)
RDS(ON) (mΩ

40
125°C
IS (A)

125°C
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY 25°C
LIABILITY ARISING
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04
25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO6402A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=15V
ID=7.5A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100

0 Crss
0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
30
10µs
TJ(Max)=150°C
10.0 RDS(ON) TA=25°C
limited
100µs 20
ID (Amps)

Power (W)

1.0 1ms
10ms
10
0.1s
0.1 DC
TJ(Max)=150°C 10s
TA=25°C

0.0 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=110°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO6402A

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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