PJ4N3KDW

30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES
• RDS(ON), [email protected],IDS@1mA=7.0Ω
• RDS(ON), [email protected],IDS@10mA=5.0Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• The MOSFET elements are independent,eliminating interference
• Mounting cost and area can be cut in half
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.5V) makes this device ideal for portable
equipment
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
6 5 4

MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 4N3 1 2 3

Absolute Maximum Ratings (TA=25OC )

P a r a m e te r S ym b o l Li mi t Uni ts

D ra i n-S o urc e Vo lta g e V DS 30 V

Ga te - S o ur c e Vo lta g e e V GS + 20 V

C o nti nuo us D ra i n C ur r e nt I D 100 mA

(1 )
P uls e d D r a i n C ur re nt I DM 800 mA

T A =2 5 O C 200
M a xi m um p o we r D i s s i p a ti o n PD mW
T A =7 5 O C 120
O
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
www.DataSheet4U.com T J ,T S TG -5 5 to + 1 5 0 C

J unc ti o n- to A m b i e nt The r m a l Re s i s ta nc e O
Rθ J A 625 C /W
( P C B m o unte d ) 2

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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 PJ4N3KDW

ELECTRICAL CHARACTERISTICS (TA=25OC )

P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts

S ta ti c

D ra i n- S o ur c e B r e a k d o wn
B V DSS V G S =0 V, I D =1 0 uA 30 - - V
Vo lta g e

Ga te Thr e s ho ld Vo lta g e V G S ( t h) V D S =3 .0 V, I D =1 0 0 uA 0 .8 - 1 .5 V

D ra i n- S o ur c e On- S ta te
R D S ( o n) VGS=2.5V, I D=1mA - - 7 .0
Re s i s ta nc e
Ω
D ra i n- S o ur c e On- S ta te
R D S ( o n) VGS=4.0V, I D=10mA - - 5.0
Re s i s ta nc e
Ze ro Ga te Vo lta g e D r a i n
ID S S VDS=30V, V GS=0V - - 1 uA
C ur re nt

Gate Body Leakage IG S S V GS =+ 2 0 V, V D S = 0 V - - 5 uA

Forward Transconductance g fS V D S =3 V, I D =1 0 mA 10 - - mS

D i o d e F o r wa rd Vo lta g e V SD IS =11 5 mA , V G S =0 V - 0 .7 8 1 .3 V

Dynamic

V D S = 1 5 V, I D =1 0 mA
To ta l Ga te C ha rg e Qg - - 0 .8 nC
VGS=4.5V

Tur n- On D e la y Ti m e td ( ON ) - 30 35

Ri s e Ti me tr VDD=5V , RL=500Ω - 8 .5 12
ID=10mA , VGEN=5V ns
Tur n- Off D e la y Ti m e t d (OF F ) RG=10Ω - 84 100

F a ll ti me tf - 32 40

Inp ut C a p a c i ta nc e C iss - 25 35

V D S = 5 V, V G S =0 V
Outp ut C a p a c i ta nc e C oss - 8 12 pF
f=1 .0 MH Z
Re ve r s e Tr a ns fe r
C rss - 2.5 5
C a p a c i ta nc e

w w w . D a t a S h e e t 4 U . c o m

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 PJ4N3KDW

MOUNTING PAD LAYOUT

ORDER INFORMATION

• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel

LEGAL STATEMENT

Copyright PanJit International, Inc 2009

The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.

www.DataSheet4U.com

REV.0.3-SEP.25.2009 PAGE . 3