ART1K6FH; ART1K6FHS;

ART1K6FHG
Power LDMOS transistor
Rev. 3 — 8 July 2022 Product data sheet

1. Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor
has been designed to cover a wide range of applications for ISM, broadcast and
communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

Table 1. Application information

Test signal f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW pulsed [1] 108 50 1400 28.7 77.3
CW pulsed [1] 108 55 1600 29.5 76.0
CW pulsed [2] 352 50 1200 20.0 68.0

[1] Production circuit: tp = 100 s;  = 10 %.

[2] Application circuit: tp = 100 s;  = 10 %.

1.2 Features and benefits

 High breakdown voltage enables class E operation at VDS = 48 V
 Suitable for VDS = 50 and 55 V
 Qualified up to a maximum of VDS = 55 V
 Characterized from 30 V to 55 V for extended power range
 Easy power control
 Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
 Excellent ruggedness with no device degradation
 High efficiency
 Excellent thermal stability
 Designed for broadband operation
 For RoHS compliance see the product details on the Ampleon website
 ART1K6FH(S)(G)
Power LDMOS transistor

1.3 Applications
 Industrial, scientific and medical applications
 Plasma generators
 MRI systems
 CO2 lasers
 Particle accelerators
 Broadcast
 FM radio
 VHF TV
 Communications
 Non cellular communications
 UHF radar

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
ART1K6FH (SOT539AN)
1 drain1 1
1 2
2 drain2
3 gate1 5
3
5
4 gate2 3 4 4

5 source [1]

2
sym117

ART1K6FHS (SOT539BN)
1 drain1 1
1 2
2 drain2
5
3 gate1 3
5
4 gate2 3 4 4

5 source [1]

2
sym117

ART1K6FHG (SOT1248C)
1 drain1 1
1 2
2 drain2
5
3 gate1 3
5
4 gate2 3 4
4

5 source [1]

2
sym117

[1] Connected to flange.

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Product data sheet Rev. 3 — 8 July 2022 2 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

3. Ordering information
Table 3. Ordering information
Package name Orderable part number 12NC Packing description Min. orderable
quantity (pieces)
SOT539AN ART1K6FHU 9349 603 27122 Tray; 20-fold; non-dry pack 60
SOT539BN ART1K6FHSU 9349 605 33112 Tray; 20-fold; non-dry pack 60
SOT1248C ART1K6FHGJ 9349 605 34118 TR13; 100-fold; 56 mm; non-dry pack 100

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 177 V
VGS gate-source voltage 9 +13 V
Tstg storage temperature 65 +150 C
Tj junction temperature [1] - 225 C

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 95 C [1][2] 0.077 K/W
Zth(j-c) transient thermal impedance from junction Tj = 95 C; tp = 100 s; [3] 0.018 K/W
to case  = 10 %

[1] Tj is the junction temperature.

[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.

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Product data sheet Rev. 3 — 8 July 2022 3 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

amp01731
0.1
Zth(j-c)
(K/W)

0.08
(7)
(6)
(5)
0.06 (4)
(3)
(2)
(1)
0.04

0.02

0
10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10
tp (s)

(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration

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Product data sheet Rev. 3 — 8 July 2022 4 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 5.5 mA 177 191 - V
VGS(th) gate-source threshold voltage VDS = 20 V; ID = 550 mA 1.5 2.1 2.5 V
IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A
IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 81 - A
VDS = 20 V
IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 280 nA
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 0.084 - 
ID = 19.25 A

Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS = 0 V; f = 1 MHz
VDS = 50 V - 1.71 - pF
VDS = 55 V - 1.65 - pF
Ciss input capacitance VGS = 0 V; f = 1 MHz
VDS = 50 V - 620 - pF
VDS = 55 V - 620 - pF
Coss output capacitance VGS = 0 V; f = 1 MHz
VDS = 50 V - 193 - pF
VDS = 55 V - 185 - pF

amp01456
1600
Coss
(pF)

1200

800

400

0
0 10 20 30 40 50 60
VDS (V)

VGS = 0 V; f = 1 MHz
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section

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Product data sheet Rev. 3 — 8 July 2022 5 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s;  = 5 %; f = 108 MHz; RF performance at VDS = 55 V;
IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 1600 W 27 28.0 - dB
RLin input return loss PL = 1600 W - 16 - dB
D drain efficiency PL = 1600 W 71 74 - %

7. Test information

7.1 Ruggedness in class-AB operation

The ART1K6FH, ART1K6FHS and ART1K6FHG are capable of withstanding a load
mismatch corresponding to VSWR  65 : 1 through all phases under the following
conditions: PL = 1400 W pulsed at VDS = 50 V and PL = 1600 W pulsed at VDS = 55 V;
IDq = 100 mA per section; tp = 100 s;  = 10 %; f = 108 MHz.

7.2 Impedance information

drain 1
gate 1

Zi ZL

gate 2

drain 2
amp01314

Fig 3. Definition of transistor impedance

Table 9. Typical push-pull impedance

Simulated Zi and ZL device impedance.
f Zi ZL PL
(MHz) () () (W)
VDS = 50 V
108 2.4  j8.7 3.3 + j0.7 1400
VDS = 55 V
108 2.4  j8.7 3.5 + j0.8 1600

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Product data sheet Rev. 3 — 8 July 2022 6 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

7.3 Test circuit

200.3 mm

C27
R3
- +

L1 T2
C6 R1 L3
C8 C10
R5/R6
C12 C16 C24
90 mm C2 C22
C1 C5 C15 C19 C21
C4
C14 C18 C20 C26
C3 C23
C13 R7/R8 C25

C9 C11 C17

C7 R2 L4
T1 L2
R4
- +
C28
amp01457
12.0 mm 32.6 mm 12.0 mm
46.0 mm
73.0 mm

Printed-Circuit Board (PCB): RF-35; r = 3.5 F/m; thickness = 0.762 mm.

See Table 10 for a list of components.
Fig 4. Component layout

Table 10. List of components

For test circuit see Figure 4.
Component Description Value Remarks
C1, C26 multilayer ceramic chip capacitor 470 pF [1]

C2, C3 multilayer ceramic chip capacitor 68 pF [1]

C4 multilayer ceramic chip capacitor 43 pF [1]

C5 multilayer ceramic chip capacitor 240 pF [1]

C6, C7 multilayer ceramic chip capacitor 4.7 F, 50 V Murata: GRM32ER71H475KA88L

C8, C9, C10, C11 multilayer ceramic chip capacitor 820 pF [1]

C12, C13 multilayer ceramic chip capacitor 180 pF [1]

C14, C15 multilayer ceramic chip capacitor 39 pF [1]

C16, C17 multilayer ceramic chip capacitor 4.7 F, 100 V TDK: C5750X7R2A475KT/A
C18, C19 multilayer ceramic chip capacitor 56 pF [1]

C20, C21 multilayer ceramic chip capacitor 51 pF [1]

C22, C23 multilayer ceramic chip capacitor 120 pF [1]

C24, C25 multilayer ceramic chip capacitor 20 pF [1]

C27, C28 electrolytic capacitor 2200 F, 100 V

L1, L2 air inductor 47 nH Coilcraft: 1515SQ-47N
L3, L4 air inductor 82 nH Coilcraft: 1515SQ-82N
R1, R2 resistor 4.7 k SMD 1206

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Product data sheet Rev. 3 — 8 July 2022 7 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

Table 10. List of components …continued

For test circuit see Figure 4.
Component Description Value Remarks
R3, R4 resistor 0.01  Vishay: WSHP2818
R5, R6, R7, R8 resistor 9.1  SMD 1206
T1, T2 semi rigid coax 50 , 160 mm EZ141-AL-TP/M17

[1] American Technical Ceramics type 100B or capacitor of same quality.

7.4 Graphical data

amp01458
32 80
Gp ηD ηD
(dB) (%)

30 60

Gp
28 40

26 20

24 0
0 400 800 1200 1600 2000
PL (W)

VDS = 55 V; IDq = 100 mA per section; f = 108 MHz; VDS = 55 V; IDq = 100 mA per section; f = 108 MHz;
tp = 100 s;  = 10 %. tp = 100 s;  = 10 %.
(1) PL(1dB) = 62.17 dBm (1650 W)
(2) PL(3dB) = 62.67 dBm (1850 W)
Fig 5. Power gain and drain efficiency as function of Fig 6. Output power as a function of input power;
output power; typical values typical values

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Product data sheet Rev. 3 — 8 July 2022 8 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

amp01460 amp01461
32 100 (1)
Gp ηD (2)
(dB) (%) (3)
(4)
30 80 (5)

28 (5)
60
(4)
(3)
(2)
26 (1) 40

24 20

22 0
0 400 800 1200 1600 2000 0 400 800 1200 1600 2000
PL (W) PL (W)

VDS = 55 V; f = 108 MHz; tp = 100 s;  = 10 %. VDS = 55 V; f = 108 MHz; tp = 100 s;  = 10 %.
(1) IDq = 50 mA per section (1) IDq = 50 mA per section
(2) IDq = 100 mA per section (2) IDq = 100 mA per section
(3) IDq = 200 mA per section (3) IDq = 200 mA per section
(4) IDq = 400 mA per section (4) IDq = 400 mA per section
(5) IDq = 600 mA per section (5) IDq = 600 mA per section
Fig 7. Power gain as a function of output power; Fig 8. Drain efficiency as a function of output power;
typical values typical values

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Product data sheet Rev. 3 — 8 July 2022 9 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

amp01462 amp01463
32 100
Gp ηD
(dB) (%)
(6) (5) (4) (3) (2) (1)
80
29.5

60

27 (1)
(2)
(3)
(4) 40
(5)
(6)
24.5
20

22 0
0 400 800 1200 1600 2000 0 400 800 1200 1600 2000
PL (W) PL (W)

IDq = 100 mA per section; f = 108 MHz; tp = 100 s; IDq = 100 mA per section; f = 108 MHz; tp = 100 s;
 = 10 %.  = 10 %.
(1) VDS = 55 V (1) VDS = 55 V
(2) VDS = 50 V (2) VDS = 50 V
(3) VDS = 45 V (3) VDS = 45 V
(4) VDS = 40 V (4) VDS = 40 V
(5) VDS = 35 V (5) VDS = 35 V
(6) VDS = 30 V (6) VDS = 30 V
Fig 9. Power gain as a function of output power; Fig 10. Drain efficiency as a function of output power;
typical values typical values

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Product data sheet Rev. 3 — 8 July 2022 10 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

8. Package outline

Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539AN

(note 3)
D
X

A
detail X
F

D1

U1 B

q C

H1 w2 M C M
c

1 2

H U2 p E1 E

5 w1 M A M B M
L
A
3 4

b w3 M Q
e

w3

0.25

0 5 10 mm
0.01
scale
Dimensions

Unit(1) A b c D D1 E E1 e F H H1 L p Q q(2) U1 U2 w1 w2

max 4.7 11.81 0.18 31.55 31.52 9.5 9.53 1.75 17.12 25.53 3.48 3.30 2.26 41.28 10.29
mm nom 13.72 35.56 0.25 0.51
min 4.2 11.56 0.10 30.94 30.96 9.3 9.27 1.50 16.10 25.27 2.97 3.05 2.01 41.02 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405
inches nom 0.54 1.400 0.01 0.02
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
3. ceramic window frame has a minimum thickness of 0.400 mm. sot539an_po

Outline References European

Issue date
version IEC JEDEC JEITA projection

SOT539AN 20-04-20

Fig 11. Package outline SOT539AN

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Product data sheet Rev. 3 — 8 July 2022 11 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

Earless flanged balanced ceramic package; 4 leads SOT539BN

(note 2)
D
X

A
F detail X
5
D1 D

U1

H1 w2 D c
1 2

H U2 E1 E

3 4
b w3 Q

0 5 10 mm
scale
Dimensions

Unit(1) A b c D D1 E E1 e F H H1 L Q U1 U2 w2 w3

max 4.7 11.81 0.18 31.55 31.52 9.5 9.53 1.75 17.12 25.53 3.48 2.26 32.39 10.29
mm nom 13.72 0.25 0.25
min 4.2 11.56 0.10 30.94 30.96 9.3 9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom 0.54 0.01 0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. ceramic window frame has a minimum thickness of 0.400 mm. sot539bn_po

Outline References European

Issue date
version IEC JEDEC JEITA projection

SOT539BN 20-04-20

Fig 12. Package outline SOT539BN

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Product data sheet Rev. 3 — 8 July 2022 12 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

Earless flanged LDMOST ceramic package; 4 leads SOT1248C

0.3 mm gauge plane

D Lp

F
A

5
D1
y
Q

detail X

v A

U1 B c
X
1 2

H U2 E1 E

3 4
A
b w2 B α
e

0 5 10 mm

scale
Dimensions

Unit(1) A b c D D1 e E E1 F H Lp Q U1 U2 v w2 y α

max 5.5 11.81 0.18 31.55 31.52 9.50 9.53 1.75 14.70 1.38 0.195 32.39 10.29 0.25 0.25 0.15 7°
mm nom 13.72
min 4.2 11.56 0.10 30.94 30.96 9.30 9.27 1.50 14.50 0.98 0.045 32.13 10.03 0°
max 0.217 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.579 0.055 0.008 1.275 0.405 0.01 0.01 0.006 7°
inches nom 0.540
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.571 0.039 0.002 1.265 0.395 0°
Note
1. Millimeter dimensions are derived from the original inch dimensions. sot1248c_po

Outline References European

Issue date
version IEC JEDEC JEITA projection
13-04-16
SOT1248C
13-08-15

Fig 13. Package outline SOT1248C

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Product data sheet Rev. 3 — 8 July 2022 13 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

9. Handling information

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

Table 11. ESD sensitivity

ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2]

[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations
Table 12. Abbreviations
Acronym Description
CW Continuous Wave
ESD ElectroStatic Discharge
FM Frequency Modulation
ISM Industrial, Scientific and Medical
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MRI Magnetic Resonance Imaging
MTF Median Time to Failure
RoHS Restriction of Hazardous Substances
SMD Surface Mounted Device
UHF Ultra High Frequency
VHF Very High Frequency
VSWR Voltage Standing Wave Ratio

11. Revision history

Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
ART1K6FH_1K6FHS_1K6FHG v.3 20220708 Product data sheet - ART1K6FH_1K6FHS_1K6FHG
v.2
Modifications: • Table 4 on page 3: changed values gate-source voltage
• Table 6 on page 5: changed value gate-source voltage
ART1K6FH_1K6FHS_1K6FHG v.2 20220322 Product data sheet - ART1K6FH v.1
ART1K6FH v.1 20200925 Product data sheet - -

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Product data sheet Rev. 3 — 8 July 2022 14 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions Right to make changes — Ampleon reserves the right to change
information including but without limitation specifications and product
descriptions published in this document at any time and without notice. This
Draft — The document is a draft version only. The content is still under
document supersedes and replaces all information regarding these products
internal review and subject to formal approval, which may result in
supplied prior to the publication hereof.
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein Suitability for use — Ampleon products are not designed, authorized or
and shall have no liability for the consequences of use of such information. warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Short data sheet — A short data sheet is an extract from a full data sheet
Ampleon product can reasonably be expected to result in personal injury,
with the same product type number(s) and title. A short data sheet is intended
death or severe property or environmental damage. Insofar as a customer or
for quick reference only and should not be relied upon to contain detailed and
another party nevertheless uses Ampleon products unlawfully for such
full information. For detailed and full information see the relevant full data
purposes, Ampleon and its suppliers are not liable for any damages.
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data Applications — Applications that are described herein for any of these
sheet shall prevail. products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
Product specification — The information and data provided in a Product
further testing or modification.
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly Customers are responsible for the design and operation of their applications
agreed otherwise in writing. An agreement according to which the functions and products using Ampleon products, and Ampleon is not liable for any
and qualities of Ampleon products exceed those described in the Product assistance with applications or customer product design. It is customer’s sole
data sheet is invalid. responsibility to determine whether the Ampleon product is suitable and fit for
the customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers shall
12.3 Disclaimers provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Maturity — After the relevant product(s) have passed the Release Gate in Ampleon is not liable related to any default, damage, costs or problem which
Ampleon's release process, Ampleon will confirm the final version in writing. is based on any weakness or default in the customer’s applications or
products, or the application or use by customer’s third party customer(s).
Limited warranty and liability — Ampleon uses its best efforts to keep the
Customer is responsible for and shall do all necessary testing for the
information in this document accurate and reliable. However, Ampleon gives
customer’s applications and products using Ampleon products in order to
no representations or warranties, expressed or implied, as to the accuracy or
avoid a default of the applications and the products or of the application or
completeness of such information and assumes no liability for the
use by customer’s third party customer(s). Ampleon is not liable in this
consequences of the use of such information. Ampleon is not liable for
respect.
content provided by an external information source.
Limiting values — Stress above one or more limiting values (as defined in
In no event and irrespective of the legal basis (contract, tort (including
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
negligence) statutory liability, misrepresentation, indemnity or any other area
damage to the device. Limiting values are stress ratings only and (proper)
of law) shall Ampleon be liable for any indirect, incidental, punitive, special or
operation of the device at these or any other conditions above those given in
consequential damages (including but without limitation loss of profit or
the Recommended operating conditions section (if present) or the
revenue, loss of use or loss of production, loss of data, cost of capital, cost of
Characteristics sections of this document is not guaranteed. Constant or
substitute goods, property damage external to the Ampleon products and any
repeated exposure to limiting values will permanently and irreversibly affect
damage, expenditure or loss arising out of such damage, business
the quality and reliability of the device.
interruption, costs related to the removal or replacement of any products or
rework charges) or any of the foregoing suffered by any third party. Terms and conditions of commercial sale — Ampleon products are sold
Notwithstanding any damages that customer might incur for any reason subject to the general terms and conditions of commercial sale, as published
whatsoever, Ampleon’s aggregate and cumulative liability towards customer at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
for the products described herein shall be limited in accordance with the individual agreement. In the event of signing an individual agreement the
Terms and conditions of commercial sale of Ampleon. terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to and rejects the validity of customer's terms and
conditions regarding the purchase of Ampleon products by customer.

ART1K6FH_1K6FHS_1K6FHG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet Rev. 3 — 8 July 2022 15 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

No offer to sell or license — Nothing in this document may be interpreted or or other guarantees of any kind with respect to such automotive applications,
construed as an offer to sell products that is open for acceptance or the grant, use and specifications, and (b) such use is solely and exclusively at
conveyance or implication of any license under any copyrights, patents or customer's own risk, and (c) customer fully indemnifies Ampleon against any
other industrial or intellectual property rights. and all liability, damages or failed product claims, including against third
parties, arising out of customer's design and use of the product for automotive
Export control — This document as well as the item(s) described herein
applications.
may be subject to export control regulations. Export might require a prior
authorization from competent authorities. Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
Non-automotive qualified products — Unless this data sheet expressly
between the translated and English versions.
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon is
not liable for inclusion and/or use of non-automotive qualified products in
12.4 Trademarks
automotive equipment or applications. Notice: All referenced brands, product names, service names and trademarks
In the event that customer breaches this and uses the products for design are the property of their respective owners.
and use in automotive applications in accordance with automotive
specifications and standards, (a) Ampleon gives no warranty, representation

13. Contact information

For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales

ART1K6FH_1K6FHS_1K6FHG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet Rev. 3 — 8 July 2022 16 of 17

 ART1K6FH(S)(G)
Power LDMOS transistor

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1 Ruggedness in class-AB operation . . . . . . . . . 6
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 6
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Handling information. . . . . . . . . . . . . . . . . . . . 14
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13 Contact information. . . . . . . . . . . . . . . . . . . . . 16
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© Ampleon Netherlands B.V. 2022. All rights reserved.

For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 8 July 2022
Document identifier: ART1K6FH_1K6FHS_1K6FHG