LM3045/LM3046/LM3086 Transistor Arrays

December 1994

LM3045/LM3046/LM3086 Transistor Arrays

General Description Features
The LM3045, LM3046 and LM3086 each consist of five Y Two matched pairs of transistors
general purpose silicon NPN transistors on a common VBE matched g 5 mV
monolithic substrate. Two of the transistors are internally Input offset current 2 mA max at IC e 1 mA
connected to form a differentially-connected pair. The tran- Y Five general purpose monolithic transistors
sistors are well suited to a wide variety of applications in low Y Operation from DC to 120 MHz
power system in the DC through VHF range. They may be Y Wide operating current range
used as discrete transistors in conventional circuits howev- Y Low noise figure 3.2 dB typ at 1 kHz
er, in addition, they provide the very significant inherent inte- Y Full military
grated circuit advantages of close electrical and thermal
temperature range (LM3045) b 55§ C to a 125§ C
matching. The LM3045 is supplied in a 14-lead cavity dual-
in-line package rated for operation over the full military tem-
perature range. The LM3046 and LM3086 are electrically Applications
identical to the LM3045 but are supplied in a 14-lead mold- Y General use in all types of signal processing systems
ed dual-in-line package for applications requiring only a lim- operating anywhere in the frequency range from DC to
ited temperature range. VHF
Y Custom designed differential amplifiers
Y Temperature compensated amplifiers

Schematic and Connection Diagram

Dual-In-Line and Small Outline Packages

TL/H/7950 – 1
Top View
Order Number LM3045J, LM3046M, LM3046N or LM3086N
See NS Package Number J14A, M14A or N14A

C1995 National Semiconductor Corporation TL/H/7950 RRD-B30M115/Printed in U. S. A.

 Absolute Maximum Ratings (TA e 25§ C)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM3045 LM3046/LM3086
Each Total Each Total Units
Transistor Package Transistor Package
Power Dissipation:
TA e 25§ C 300 750 300 750 mW
TA e 25§ C to 55§ C 300 750 mW
TA l 55§ C Derate at 6.67 mW/§ C
TA e 25§ C to 75§ C 300 750 mW
TA l 75§ C Derate at 8 mW/§ C
Collector to Emitter Voltage, VCEO 15 15 V
Collector to Base Voltage, VCBO 20 20 V
Collector to Substrate Voltage, VCIO (Note 1) 20 20 V
Emitter to Base Voltage, VEBO 5 5 V
Collector Current, IC 50 50 mA
Operating Temperature Range b 55§ C to a 125§ C b 40§ C to a 85§ C
Storage Temperature Range b 65§ C to a 150§ C b 65§ C to a 85§ C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) 260§ C 260§ C
Small Outline Package
Vapor Phase (60 Seconds) 215§ C
Infrared (15 Seconds) 220§ C
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices.

Electrical Characteristics (TA e 25§ C unless otherwise specified)

Limits Limits
Parameter Conditions LM3045, LM3046 LM3086 Units
Min Typ Max Min Typ Max
Collector to Base Breakdown Voltage (V(BR)CBO) IC e 10 mA, IE e 0 20 60 20 60 V
Collector to Emitter Breakdown Voltage (V(BR)CEO) IC e 1 mA, IB e 0 15 24 15 24 V
Collector to Substrate Breakdown IC e 10 mA, ICI e 0
20 60 20 60 V
Voltage (V(BR)CIO)
Emitter to Base Breakdown Voltage (V(BR)EBO) IE 10 mA, IC e 0 5 7 5 7 V
Collector Cutoff Current (ICBO) VCB e 10V, IE e 0 0.002 40 0.002 100 nA
Collector Cutoff Current (ICEO) VCE e 10V, IB e 0 0.5 5 mA
Static Forward Current Transfer VCE e 3V 100 100
IC e 10 mA

Ð
Ratio (Static Beta) (hFE)
IC e 1 mA 40 100 40 100
IC e 10 mA
54 54
Input Offset Current for Matched VCE e 3V, IC e 1 mA
0.3 2 mA
Pair Q1 and Q2 lIO1 b IIO2l
Base to Emitter Voltage (VBE) VCE e 3V I e 1 mA 0.715 0.715
Ð IEE e 10 mA 0.800 0.800
V

Magnitude of Input Offset Voltage for VCE e 3V, IC e 1 mA

0.45 5 mV
Differential Pair lVBE1 b VBE2l
Magnitude of Input Offset Voltage for Isolated VCE e 3V, IC e 1 mA
Transistors lVBE3 b VBE4l, lVBE4 b VBE5l, 0.45 5 mV
lVBE5 b VBE3l
Temperature Coefficient of Base to VCE e 3V, IC e 1 mA

# J
Emitter Voltage DVBE b 1.9 b 1.9 mV/§ C
DT
Collector to Emitter Saturation Voltage (VCE(SAT)) IB e 1 mA, IC e 10 mA 0.23 0.23 V
Temperature Coefficient of VCE e 3V, IC e 1 mA

# J
Input Offset Voltage DV10 1.1 mV/§ C
DT
Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

2
 Electrical Characteristics (Continued)
Parameter Conditions Min Typ Max Units
Low Frequency Noise Figure (NF) f e 1 kHz, VCE e 3V,
3.25 dB
IC e 100 mA, RS e 1 kX
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (hfe) f e 1 kHz, VCE e 3V, 110 (LM3045, LM3046)
IC e 1 mA (LM3086)
Short Circuit Input Impednace (hie) 3.5 kX
Open Circuit Output Impedance (hoe) 15.6 mmho
Open Circuit Reverse Voltage Transfer Ratio (hre) 1.8 x 10b4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Yfe) f e 1 MHz, VCE e 3V, 31 b j 1.5
Input Admittance (Yie) IC e 1 mA 0.3 a J 0.04
Output Admittance (Yoe) 0.001 a j 0.03
Reverse Transfer Admittance (Yre) See Curve
Gain Bandwidth Product (fT) VCE e 3V, IC e 3 mA 300 550
Emitter to Base Capacitance (CEB) VEB e 3V, IE e 0 0.6 pF
Collector to Base Capacitance (CCB) VCB e 3V, IC e 0 0.58 pF
Collector to Substrate Capacitance (CCI) VCS e 3V, IC e 0 2.8 pF

Typical Performance Characteristics

Typical Collector To Base Typical Collector To Emitter Typical Static Forward
Cutoff Current vs Ambient Cutoff Current vs Ambient Current-Transfer Ratio and
Temperature for Each Temperature for Each Beta Ratio for Transistors Q1
Transistor Transistor and Q2 vs Emitter Current

TL/H/7950 – 2

Typical Static Base To Emitter

Voltage Characteristic and Input
Typical Input Offset Current Offset Voltage for Differential
for Matched Transistor Pair Pair and Paired Isolated
Q1 Q2 vs Collector Current Transistors vs Emitter Current

TL/H/7950 – 3

3
Typical Performance Characteristics (Continued)

Typical Input Offset Voltage

Typical Base To Emitter Characteristics for Differential
Voltage Characteristic for Pair and Paired Isolated
Each Transistor vs Ambient Transistors vs Ambient Typical Noise Figure vs
Temperature Temperature Collector Current

TL/H/7950 – 4

Typical Normalized Forward

Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Typical Noise Figure vs Typical Noise Figure vs Voltage Transfer Ratio vs
Collector Current Collector Current Collector Current

TL/H/7950 – 5

Typical Forward Transfer Typical Input Admittance Typical Output Admittance

Admittance vs Frequency vs Frequency vs Frequency

TL/H/7950 – 6

4
Typical Performance Characteristics (Continued)

Typical Reverse Transfer Typical Gain-Bandwidth

Admittance vs Frequency Product vs Collector Current

TL/H/7950 – 7

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J)

Order Number LM3045J
NS Package Number J14A

5
LM3045/LM3046/LM3086 Transistor Arrays
Physical Dimensions inches (millimeters) (Continued)

Molded Small Outline Package (M)

Order Number LM3046M
NS Package Number M14A

Molded Dual-In-Line Package (N)

Order Number LM3046N or LM3086N
NS Package Number N14A

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failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
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