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    Carrier Action II S16

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    puceiroale
    1. The document summarizes key concepts from a lecture on carrier transport in semiconductors, including drift current, diffusion current, and the relationship between mobility and diffusion coefficient. 2. It describes how the Fermi level must remain constant in equilibrium to prevent a net diffusion current, and introduces Einstein's relation that the diffusion coefficient is proportional to temperature and inversely proportional to charge. 3. Fick's laws of diffusion and the drift-diffusion equation are presented, relating carrier flux to both the electric field and concentration gradient, with mobility and diffusion coefficient following Einstein's relation.

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    Carrier Action II S16

    Uploaded by

    puceiroale
    20 views18 pages
    1. The document summarizes key concepts from a lecture on carrier transport in semiconductors, including drift current, diffusion current, and the relationship between mobility and diffusion coefficient. 2. It describes how the Fermi level must remain constant in equilibrium to prevent a net diffusion current, and introduces Einstein's relation that the diffusion coefficient is proportional to temperature and inversely proportional to charge. 3. Fick's laws of diffusion and the drift-diffusion equation are presented, relating carrier flux to both the electric field and concentration gradient, with mobility and diffusion coefficient following Einstein's relation.

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    Carrier Action II S16 (1)

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    1. The document summarizes key concepts from a lecture on carrier transport in semiconductors, including drift current, diffusion current, and the relationship between mobility and diffusion coefficient. 2. It describes how the Fermi level must remain constant in equilibrium to prevent a net diffusion current, and introduces Einstein's relation that the diffusion coefficient is proportional to temperature and inversely proportional to charge. 3. Fick's laws of diffusion and the drift-diffusion equation are presented, relating carrier flux to both the electric field and concentration gradient, with mobility and diffusion coefficient following Einstein's relation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views18 pages

    Carrier Action II S16

    Uploaded by

    puceiroale
    1. The document summarizes key concepts from a lecture on carrier transport in semiconductors, including drift current, diffusion current, and the relationship between mobility and diffusion coefficient. 2. It describes how the Fermi level must remain constant in equilibrium to prevent a net diffusion current, and introduces Einstein's relation that the diffusion coefficient is proportional to temperature and inversely proportional to charge. 3. Fick's laws of diffusion and the drift-diffusion equation are presented, relating carrier flux to both the electric field and concentration gradient, with mobility and diffusion coefficient following Einstein's relation.

    Copyright:

    © All Rights Reserved
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    of 18

    ECE-305: Spring 2016

    Carrier Action: II
    Pierret, Semiconductor Device Fundamentals (SDF)
    pp. 94-104

    Professor Mark Lundstrom


    Electrical and Computer Engineering
    Purdue University, West Lafayette, IN USA
    [email protected]

    Lundstrom ECE 305 S16


    2/2/16
    drift current

    • moving carriers produce a current

    • a electric field cause carries to move at a velocity


    that is +/- the mobility times the electric field.

    J n−drift = n ( −q )υ dn = σ nE = +nqµ nE

    J p − drift = σ p E = pqµ p E

    ( ) (
    J tot − drift = σ n + σ p E = nqµ n + pqµ p E)
    2
    Lundstrom ECE 305 S16
    outline

    1.  Diffusion current

    2.  The Fermi level is constant!

    3.  The relation between D and µ

    Lundstrom ECE 305 S16 3


    Fick’s Law of diffusion

    p( x)

    Jp dp #
    F = = −D
    F q dx cm 2 -s

    D cm 2 s

    ! !
    F = − D∇p

    x0 x (Adolph Fick, 1855)

    4 Lundstrom ECE 305 S16


    diffusion current

    p x () J p+

    ℓ is the J p = J p+ − J p−
    “mean-free-
    path” for
    scattering J p−

    pL pR

    x0 − ℓ x0 x0 + ℓ x
    5
    diffusion current

    pL pR
    J p+ = q υT J p− = q υT
    2 2
    ()
    p x
    J p+ υT
    +
    Jp = J − J = q
    p
    2
    −
    pL − pR
    p ( )
    Jp
    ℓ is the
    Jp = q
    (
    υT ℓ pL − pR )
    “mean-free- J p− 2 ℓ
    path” for
    scattering dp
    J p = −qD p
    dx
    υT ℓ
    pL pR Dp ≡ cm 2 s
    2
    x0 − ℓ x0 x0 + ℓ x
    6
    diffusion currents for electrons and holes

    ! ! υTp ℓ p
    J p − diff = −qD p∇p Dp ≡ cm 2 s
    2

    ! ! υTn ℓ n
    J n− diff = qDn∇n Dn ≡ cm 2 s
    2

    7 Lundstrom ECE 305 S16


    diffusion current

    p x() dp
    J p − diff = −qD p
    dx
    What direction is
    the electric field? Is there a current
    or flux (Jp/q) of holes?
    a)  To the right in equilibrium, NO!
    b)  To the left
    E ≠0

    x
    There must be a drift current that exactly
    cancels the diffusion current.
    8
    drift- diffusion equation

    ! ! ! ! !
    J p = J p − drift + J p − diff = pqµ pE − qD p∇p

    current = drift current + diffusion current


    ! ! ! ! !
    J n = J n− drift + J n− diff = nqµ nE + qDn∇n

    ! ! !
    J = J p + Jn
    qτ qτ
    µp = * µn = *
    mp mn
    mobility and diffusion coefficient
    υTp ℓ p υTn ℓ n
    Dp = Dn =
    2 2 Lundstrom ECE 305 S16 9
    is there a relation between D and µ?
    L

    I
    n-type semiconductor
    υ d = − µ nE x

    −V +

    the drift current is also “diffusive”

    10 Lundstrom ECE 305 S16


    outline

    1.  Diffusion current ✓


    2.  The Fermi level is constant!

    3.  The relation between D and µ

    Lundstrom ECE 305 S16 11


    the Fermi level in equilibrium

    E1
    E
    EC ( x )
    EF
    Ei ( x )
    EV ( x )

    1
    f (E) =
    1+ e( E1 −EF ) kBT

    Lundstrom ECE 305 S16 12


    the Fermi level in equilibrium

    Very, very important point:


    The Fermi level is constant in equilibrium.

    Lundstrom ECE 305 S16 13


    outline

    1.  Diffusion current ✓


    2.  The Fermi level is constant! ✓
    3.  The relation between D and µ

    Lundstrom ECE 305 S16 14


    Einstein Relation

    dp
    J p = pqµ pE − qD p =0
    dx

    p = ni e( i F )
    E −E kBT

    Dp k BT Dn k BT
    (non-degenerate = =
    semiconductor) µp q µn q

    (Einstein, 1905)

    Fig. 3.5 of SDF gives both the mobility and diffusion coefficient.
    15 Lundstrom ECE 305 S16
    mobility vs. doping

    D k BT
    =
    µ q

    from R.F. Pierret, Semiconductor Device Fundamentals, Fig. 3.5 (a)


    16 Lundstrom ECE 305 S16
    drift- diffusion equation

    qτ ! !
    µp = * ! ! !
    mp J p = J p − drift + J p − diff = pqµ pE − qD p∇p

    qτ current = drift current + diffusion current


    µn = *
    mn ! ! ! ! !
    J n = J n− drift + J n− diff = nqµ nE + qDn∇n
    υTp ℓ p
    Dp = total current = electron current + hole current
    2 ! ! !
    J = J p + Jn

    υTn ℓ n
    Dn = D p µ p = Dn µ n = k BT q
    2
    Lundstrom ECE 305 S16 17
    outline

    1.  Diffusion current ✓


    2.  The Fermi level is constant! ✓
    3.  The relation between D and µ ✓

    Lundstrom ECE 305 S16 18

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