MS23P01S

P-Channel Enhancement Mode Power MOSFET

Description
D
The MS23P01S uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable G
for use as a load switch or in PWM applications.

S
General Features
Schematic diagram
● VDS = -20V,ID = -2.6A
RDS(ON) < 160mΩ @ VGS=-2.5V
RDS(ON) < 120mΩ @ VGS=-4.5V

● High power and current handing capability

● Lead free product is acquired
Marking and pin assignment
● Surface mount package

Application
● PWM applications
● Load switch
SC70-3/ SOT-323 top view

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
A1SHB MS23P01S SOT-23 Ø180mm 8 mm 3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -2.6 A
(Note 1)
Drain Current -Pulsed IDM -13 A
Maximum Power Dissipation PD 0.9 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
(Note 2)
Thermal Resistance,Junction-to-Ambient RθJA 138 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 - V
Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA

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 MS23P01S
Parameter Symbol Condition Min Typ Max Unit
Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V
VGS=-4.5V, ID=-2 A - 78 120 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=-2.5V, ID=-1.8A - 102 160 mΩ
Forward Transconductance gFS VDS=-5V,ID=-1A 6 - - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss - 325 - PF
VDS=-10V,VGS=0V,
Output Capacitance Coss - 63 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 37 - PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 11 - nS
Turn-on Rise Time tr VDD=-10V, RL=5Ω - 5.5 - nS
Turn-Off Delay Time td(off) VGS=-4.5V,RGEN=3Ω - 22 - nS
Turn-Off Fall Time tf - 8 - nS
Total Gate Charge Qg - 3.2 - nC
VDS=-10V,ID=-2A,
Gate-Source Charge Qgs - 0.6 - nC
VGS=-4.5V
Gate-Drain Charge Qgd - 0.9 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - -1.2 V
(Note 2)
Diode Forward Current IS - - -2.6 A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 MS23P01S
Typical Electrical and Thermal Characteristics
ton toff
tr tf
td(on) td(off)

90% 90%

VOUT INVERTED
10% 10%

90%
VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

-ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(Ω)
ID- Drain Current (A)

-Vds Drain-Source Voltage (V) -ID- Drain Current (A)

Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance

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 MS23P01S

Normalized On-Resistance
ID- Drain Current (A)

-Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(Ω)

C Capacitance (pF)

-Vgs Gate-Source Voltage (V) -Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) -Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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 MS23P01S

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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 MS23P01S
SC70-3 Package Information

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