HAF2015RJ

Silicon N Channel MOS FET Series

Power Switching

ADE-208-933 (Z)
1st. Edition
Dec. 2000

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the
built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (5 to 6 V Gate drive)

• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Temperature hysteresis type.
• High density mounting.

Outline

SOP-8 D D
7 8

2
G Gate resistor 5
7 6
8
Tmperature self Gate
sencing return shutdown
3 4
circuit circuit circuit
1 2
1
MOS1
S
D D
5 6

4 1, 3 Source
G Gate resistor
2, 4 Gate
Tmperature self Gate 5, 6, 7, 8 Drain
sencing return shutdown
circuit circuit circuit

3
MOS2
S
HAF2015RJ

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS 16 V
Gate to source voltage VGSS –2.5 V
Drain current ID 2 A
Note1
Drain peak current I D(pulse) 4 A
Body-drain diode reverse drain current I DR 2 A
Note4
Avalanche current I AP 0.54 A
Note4
Avalanche energy EAR 25 mJ
Note2
Channel dissipation Pch 2 W
Note3
Channel dissipation Pch 1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s
4. Tch = 25°C , Rg > 50 Ω

Typical Operation Characteristics

Item Symbol Min Typ Max Unit Test Conditions
Input voltage VIH 3.5 — — V
VIL — — 1.2 V
Input current I IH1 — — 100 µA Vi = 5V, VDS = 0
(Gate non shut down) I IH2 — — 50 µA Vi = 3.5V, VDS = 0
I IL — — 1 µA Vi = 1.2V, VDS = 0
Input current I IH(sd)1 — 0.53 — mA Vi = 8V, VDS = 0
(Gate shut down) I IH(sd)2 — 0.2 — mA Vi = 3.5V, VDS = 0
Shut down temperature Tsd — 175 — °C Channel temperature
Hysteresis temperature Thr — 120 — °C Channel temperature
Gate operation voltage Vop 3.5 — 12 V

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 HAF2015RJ

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain current I D1 0.7 — — A VGS = 3.5 V, VDS = 2 V
Drain current I D2 — — 10 mA VGS = 1.2 V, VDS = 2 V
Drain to source breakdown V(BR)DSS 60 — — V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS 16 — — V I G = 300 µA, VDS = 0
voltage
Gate to source breakdown V(BR)GSS –2.5 — — V I G = –100 µA, VDS = 0
voltage
Gate to source leak current I GSS1 — — 100 µA VGS = 5 V, VDS = 0
I GSS2 — — 50 µA VGS = 3.5 V, VDS = 0
I GSS3 — — 1 µA VGS = 1.2 V, VDS = 0
I GSS4 — — –100 µA VGS = –2.4 V, VDS = 0
Input current (shut down) I GS(op)1 — 0.53 — mA VGS = 8 V, VDS = 0
I GS(op)2 — 0.2 — mA VGS = 3.5 V, VDS = 0
Zero gate voltege drain current I DSS1 — — 10 µA VDS = 60 V, VGS = 0
Zero gate voltege drain current I DSS2 — — 10 mA VDS = 48 V, VGS = 0
Ta = 125°C
Gate to source cutoff voltage VGS(off) 1.4 — 2. 5 V I D = 1 mA, VDS = 10V
Static drain to source on state RDS(on) — 130 200 mΩ I D = 1 A, VGS = 5 V Note5
resistance
Static drain to source on state RDS(on) — 110 160 mΩ I D = 1 A, VGS = 10 V Note5
resistance
Forward transfer admittance |yfs| 0.5 2.5 — S I D = 1 A, VDS = 10 V Note5
Output capacitance Coss — 139 — pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time t d(on) — 4.2 — µs I D = 1 A, VGS = 5 V
Rise time tr — 20 — µs RL = 30 Ω
Turn-off delay time t d(off) — 1 — µs
Fall time tf — 1 — µs
Body–drain diode forward VDF — 0.82 — V I F = 2A, VGS = 0
voltage
Body–drain diode reverse t rr — 55 — ns I F = 2A, VGS = 0
recovery time diF/ dt = 50 A/µs
Over load shut down t os1 — 15 — ms VGS = 5 V, VDD = 16 V
operation timeNote6

Note: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition

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HAF2015RJ
Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

4.0 50
Thermal shut down
20 Operation area 10
Pch (W)

Test Congition: 0
When using the glass epoxy board µs
10

Drain Current I D (A)

3.0 (FR4 40 × 40 × 1.6mm), PW < 10 s 5
1
m
Channel Dissipation

2 s
PW
2.0 1 =
2D 10
riv m
s
eO 0.5
1D pe Operation in this area
riv rat is limited by R DS(on)
1.0 eO ion 0.2 DC
pe PW Op
rat 0.1 Ta = 25°C < era
ion 1 shot Pulse 10 tio

No
s n

te
0.05

7
1 Drive Operation
0 0.03
50 100 150 200 0.5 1 2 5 10 20 50 100
Case Temperature Tc (°C) Drain to Source Voltage VDS (V)
Note7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)

Typical Output Characteristics Typical Transfer Characteristics

5 2.5
Pulse Test V DS = 10 V
10 V
Pulse Test
4 8V 2
6V Tc = -25°C
Drain Current I D (A)

Drain Current I D (A)

5V 25°C
3 1.5
75°C
4V
2 1
VGS = 3.5 V
1 0.5

0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

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 HAF2015RJ

Drain to Source Saturation Voltage vs. Static Drain to Source Sate Resistance
Gate to Source Voltage vs. Drain Current

R DS(on) (mΩ)
V DS(on) (V)
0.25 500
Pulse Test

Drain to Source On State Resistance

Drain to Source Saturation Voltage

0.2 200
V GS = 5 V

0.15 100
V GS = 10 V
I D= 1 A
0.1 50

0.5 A
0.05 20
0.2 A
Pulse Test
10
0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20
Gate to Source Voltage VGS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
0.25 10
R DS(on) (mΩ)

Pulse Test V DS = 10 V
Drain to Source On State Resistance

|yfs| (S)

0.5 A, 0.2 A
ID=1A 5 Pulse Test
Forward Transfer Admittance

0.2

V GS = 5 V Tc = -25°C
ID=1A 2
0.15
0.5 A, 0.2 A 1

0.1 75°C
0.5
V GS = 10 V
25°C
0.05
0.2

0 0.1
-40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5
Case Temperature Tc (°C) Drain Current I D (A)

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HAF2015RJ

Body to Drain Diode Reverse

Recovery Time Switching Characteristics
500 100
V GS = 5 V, V DD •=• 30 V
Reverse Recovery Time trr (ns)

50 PW = 300 µs, duty ≤ 1 %

200

Switching Time t (µs)

20 tr
100 10
t d (on)
50 5

2
20 di / dt = 50 A / µs tf
1
V GS = 0, Ta = 25°C
t d (off)
10 0.5
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5

Reverse Drain Current I DR (A) Drain Current I D (A)

Reverse Drain Current vs. Typical Capacitance vs.

Souece to Drain Voltage Drain to Source Voltage
5 1000
VGS = 5 V Pulse Test
Capacitance Coss (pF)
Reverse Drain Current I DR (A)

3
100
0V
2

1
VGS = 0
f = 1 MHz
10
0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50
Source to Drain Voltage V SD(V) Drain to Source Voltage VDS (V)

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 HAF2015RJ

Gate to Source Voltage vs. Shutdown Case Temperature vs.

Shutdown Time of Load-Short Test Gate to Source Voltage
12 200

Shutdown Case Temperature Tc (°C)

(V)
GS

10
V DD= 16 V 180
V

8
Gate to Source Voltage

160
6
140
4

2 120 I D = 0.2 A

0 100
0.0001 0.001 0.01 0.1 1 0 2 4 6 8 10
Shutdown Time of Load-Short Test Gate to Source Voltage V GS (V)
Pw (S)

Switching Time Test Circuit Waveform

Vin Monitor Vout

Monitor
90%
D.U.T.
RL
Vin 10%

Vin V DD Vout 10%

50W 10%
5V = 30 V

90% 90%

td(on) tr td(off) tf

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HAF2015RJ

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance γs (t) 10

D=1
1
0.5
0.2
0.1
0.1
0.05
0.02 θ ch-f(t) = γ s (t) • θch - f
θ ch-f = 125°C/W, Ta = 25°C
0.01
0.01 When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
e
puls
ot PDM PW
0.001 h D=
1s T
PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

10
Normalized Transient Thermal Impedance γs (t)

D=1
1
0.5
0.2
0.1
0.1
0.05
0.02 θ ch-f(t) = γ s (t) • θch - f
θ ch-f = 166 °C/W, Ta = 25°C
0.01
0.01 When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
e PW
0.001 p uls PDM D=
ot T
h
1s PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)

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 HAF2015RJ

Package Dimensions

As of January, 2001
Unit: mm
4.90
5.3 Max
8 5

3.95
1 4

*0.22 ± 0.03
0.20 ± 0.03
1.75 Max
+ 0.10
6.10 – 0.30
0.75 Max
1.08

0° – 8°
+ 0.11
0.14 – 0.04

+ 0.67
1.27 0.60 – 0.20

*0.42 ± 0.08
0.40 ± 0.06
0.15

0.25 M
Hitachi Code FP-8DA
JEDEC Conforms
*Dimension including the plating thickness EIAJ —
Base material dimension Mass (reference value) 0.085 g

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HAF2015RJ

Cautions

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connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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