RoHS

YJD100G10A COMPLIANT

N-Channel Enhancement Mode Field Effect Transistor

Product Summary
● VDS 100 V
● ID 100 A
● RDS(ON)( at VGS=10V) ＜8.0 mohm
● 100% UIS Tested
● 100% ▽VDS Tested

General Description
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Fast switching and soft recovery

Applications
● Consumer electronic power supply
● Motor control
● Synchronous-rectification
● Isolated DC/DC convertor
● Invertors
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit

Drain-source Voltage VDS 100 V

Gate-source Voltage VGS ±20 V

Drain Current A TC=25℃ ID 100 A

Pulsed Drain Current B TC=25℃ IDM 300 A

Avalanche energy C EAS 130 mJ

Total Power Dissipation D Tc=25℃ PD 121 W

Thermal Resistance, junction-ambient E RθJA 62 ℃/ W

Thermal Resistance, junction-case RθJC 1.03 ℃/ W

Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃

■ Ordering Information (Example)

PACKING MINIMUM INNER BOX OUTER CARTON
PREFERED P/N Marking DELIVERY MODE
CODE PACKAGE(pcs) QUANTITY(pcs) QUANTITY(pcs)

YJD100G10A F2 YJD100G10A 2500 2500 25000 13“ reel

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■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units

Static Parameter

Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V

Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA

Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA

Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.3 1.8 2.3 V

Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=12A 6.5 8.0 mΩ

Diode Forward Voltage VSD IS=30A,VGS=0V 1.3 V

Maximum Body-Diode Continuous Current IS 100 A

Dynamic Parameters

Input Capacitance Ciss 3530

Output Capacitance Coss VDS=50V,VGS=0V,f=1MHZ 560 pF

Reverse Transfer Capacitance Crss 9.0

Switching Parameters

Total Gate Charge Qg 60.7

Gate-Source Charge Qgs VGS=10V,VDS=50V,ID=10A 7.2

nC
Gate-Drain Charge Qgd 14.6

Reverse Recovery Chrage Qrr 160

IF=10A, di/dt=100A/us
Reverse Recovery Time trr 67

Turn-on Delay Time tD(on) 22.5

Turn-on Rise Time tr 8.6 ns

VGS=10V,VDD=50V,ID=10A
Turn-off Delay Time tD(off) 66.6

Turn-off fall Time tf 42.1

A. Calculated continuous current based on maximum allowable junction temperature.

B. Repetitive rating; pulse width limited by max. junction temperature.
C. VDD=50V, RG=50Ω, L=0.3mH, starting TJ=25 ℃.
D. PD is based on max. junction temperature, using junction-case thermal resistance.
E. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C.

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 YJD100G10A
■ Typical Performance Characteristics

Figure1. Output Characteristics Figure2. Transfer Characteristics

Figure3. Capacitance Characteristics Figure4. Gate Charge

Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance

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Rev.2.0,25-Jan-19
 YJD100G10A

Figure7. Drain-source breakdown voltage Figure8.Safe Operation Area

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Rev.2.0,25-Jan-19
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■ TO-252 Package information

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Rev.2.0,25-Jan-19
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Disclaimer

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

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