TECHNOLOGICAL UNIVERSITY OF THE PHILIPPINES

TAGUIG CAMPUS
ELECTRICAL AND ALLIED DEPARTMENT
ELECTRICAL ENGINEERING

ELECTRONICS 2
ELECTRONIC CIRCUITS AND DEVICES
LABORATORY EXPERIMENT

GROUP MEMBERS:

AUSTRIA, KERWIN JAMES B

RAMOS, DENMARK

ENQUILINO, PHILJAYBAN

PREPARED BY

MR. JIM A. LINDA, CoE

FACULTY ELECTRICAL ENGIBEERING
 EXPERIMENT # 1
TRANSISTOR CHARACTERISTICS

ObjectiveS:

• To understanding the structure of transistors

• Determine the input and output characteristics of transistors

Materials:

• Transistor: 2 units of 2N222 silicon transistor

• Resistor: 2 units 1KΩ and 2 units 100Ω
• Potentiometer: 2 units 2MΩ, 3 units 10kΩ

Theory:
BJT transistors are produced using doped P and N type materials. There are mainly two types of NPN
and PNP. NPN transistors include 2 units N type semiconductor materials and 1 unit P type semiconductor
material which is between of N type materials. PNP transistors include 2 units P type semiconductor materials
and 1 unit N type semiconductor material which is between of P type materials. Therefore, the transistor has 3
layers or terminals (Figure 1).

Figure 1
 In figure 2, it is given required polarity connections for NPN and PNP type transistors. It is applied
correct polarization towards base-emitter joint of the transistor by VBB source. It is applied cross polarization
towards base-collector joint of the transistor by VCC source

Figure 2

INPUT CHARACTERISTICS

The characteristic curve shows the relationship of any current-voltage electrical materials. Transistor
has 2 different characteristic curves for input and output. Input characteristic of transistor gives the relation
between emitter voltage (VBE) and base current (IB) . To obtain the input characteristic of transistor, collector-
emitter voltage (VCE) is taken as a parameter and base current (IB) is changed due to this voltage. It is
measured the effect base emitter voltage (VBE) because of changes of base current.

As it can be seen from the graph, input characteristic of the transistor is like a normal diode characteristic.
While VBE voltage is less than 0.5 V, base current is so small that can be negligible. Unless it is said in the
applications, it can be accepted base-emitter voltage is equal to 0.7 V when transistor start the transmission.
Temperature can affect base emitter voltage (VBE) a little part. For example, when the temperature increases
each 1 degree, VBE will decrease about 2.3 mV.
OUTPUT CHARACTERISTICS
Output from the transistors is usually taken between collector-emitter poles. Therefore, output
characteristic of transistor gives changes of collector current (IC) and collector-emitter voltage (VCE) which
depends change of base current (IB) . VCE source which is applied to transistor is important. This voltage should
be equal to determined limit values. If the voltage exceeds the determined limit value, it causes deterioration due
to occurred refraction on the transistor

EXPERIMENT PROCEDURE

1. Construct the following circuit to determine the characteristic of the common emitter BJT circuit.

2. Obtain VCE and VBE for adjusting potentiometer to 1 MΩ and 10 KΩ by using values at the Table 1. Measure
and save values of VRB for each VCE and VBE values at the Table1. It is advised using 2 measurement devices
to be sure VCE value is constant
3. Investigate the output characteristic of following circuit which has a common emitter adjust the value of
potentiometer set to max value (10 kΩ). V CE will decrease about 0 V because of this situation. After, adjust the
potentiometer (1 MΩ) for IB will be equal to 10 μA (It is important that when V RB is equal to 10 mV, IB is
equal to 10 μA). After that, for each values of V CE at the Table 2, adjust the potentiometers (10 kΩ) ensure I B
will have constant value.
 Vce Lb=10 µA Lb=20 µA Lb=30 µA
Vrc Lc=Vrc/ Vrc Lc=Vrc/Rc Vrc Lc=Vrc/Rc
Rc
0.2V 3.415 pv
0.4V 1.497 nV
O.8V
1V
3V
5V

4. Measure and save VRC by using each combination of V CE and IB values at the Table 2.
 5. Compute and save IB values at the Table 1. Draw input characteristic of the biasing circuit by using these
values which is given at the Table 1 and you have had before

6. Compute and save IC values at the Table 2. Draw output characteristic which has common emitter by using
these values which is given at the Table 2 and you have had before

Report:
In your lab report, present experimental data and compare them with your expected results.
Discuss any discrepancies, make comments, and write conclusions

Your group report will include the following information:

1. Laboratory partner.
2. Date and time data were taken.
3. The pre-laboratory results.
4. The experimental procedures.
5. All calculations and simulation results for each step.
6. All plots and waveforms for each step.
7. Short summary discussing what was observed for each of the steps given in experiment.
8. What you learned
 EXPERIMENT # 2
TRANSISTOR BIASING
OBJECTIVE:

• To study the transistor biasing and bias stability

MATERIALS:

Oscilloscope: Digital Oscilloscope

Function Generator
2N2222 Bipolar Transistors
Capacitors available in the laboratory
Resistors available in the laboratory

THEORY

A typical transistor amplifier circuit is shown Fig. 1.a. Figure 1.b is a simplified equivalent.
Figure 2 shows a typical DC load line and a Q-point. The input AC signal disturbs the base
current that in turn makes the Q-point move on the load line producing a proportionally larger
disturbance in the collector current, thus producing amplification. Fig. 3 is the same as Fig. 1
with an AC input signal added.
PRE-LAB
Assume VCC = 12 V.

A) Consider the circuit in Fig. 1.b with RC = 1.8 kΩ, RB = 5.6 kΩ, and RE = 0 Ω.
B) Calculate VBB so that IC = 2 mA. Assume β = 220 and VBE = 0.7 V. Find the Q-point.
C) If β changes to 150, what is the new IC from your circuit simulation?
(https://www.youtube.com/watch?v=f9nQegznLPI change beta of 2N222 model parameter in MultiSim.)
D) Repeat (B) above if RE is changed to 1.8 kΩ.

E) Consider the circuit in Fig. 3 with RC = RE = 1.8 kΩ. Calculate the values for R1, R2 so that
ICQ = 2 mA. Use a sinusoidal input (small-signal peak to peak voltage of 20 mV) and current
gain of 150 in your circuit simulation. Plot vi, vC, vE, and vCE versus time.

Figure 3

Experimental Procedure:
The purpose of this experiment is to verify the theoretical results.
a) Connect the circuit of Fig. 1.b with values calculated in the pre-lab preparation. Measure the
Q-point and compare with expected value. Measure IC and IB and compute the current gain b.
b) If needed, adjust VBB so that ICQ is about 2 mA. Replace the transistor with another one and
check if the ICQ remains the same. Repeat with a third transistor. Does the collector current
remain the same? Why or Why not?
c) Modify the circuit by inserting RE as in the preparation and repeat parts a) above.
d) Connect the circuit in Fig. 3 using the values you have calculated in the preparation. Measure
the Q-point and compare with expected value.
e) Connect and set the generator to a sinusoidal of 3 kHz. Use 10 μF for the capacitor C. Make
sure the capacitor is connected with the correct polarity. Adjust the input amplitude so that none
of the waveforms is clipped. Observe and include in your report the following waveforms:
Input voltage vi, collector voltage vC, emitter voltage vE, and collector-emitter voltage vCE.
Plot all those waveforms on a common time scale using 2 to 3 sinusoidal cycles.
Report:
In your lab report, include theoretical, simulated, and experimental results and make comment
about discrepancies, as well as any other observations that you have.

Your group report will also include the following information:

1. Laboratory partner.
2. Date and time data were taken.
3. The pre-laboratory results.
4. The experimental procedures.
5. All calculations and simulation results for each step.
6. All plots and waveforms for each step.
7. Short summary discussing what was observed for each of the steps given in experiment.
8. What you learned.

PRE-LAB ANSWER

A.)

B.)
C.)

D.)

E.)
Experimental Procedure: