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Component List

This document provides a bill of materials for a half bridge driver circuit using GaN components. It includes 36 required items such as capacitors, inductors, resistors, MOSFETs, and integrated circuits. It also lists 8 optional additional components that could be included, such as wires, a breadboard, diodes, variable resistors, and more inductors and capacitors. The total cost of the required components is 161.62 Euros.

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Arsalan Athar
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0% found this document useful (0 votes)
94 views1 page

Component List

This document provides a bill of materials for a half bridge driver circuit using GaN components. It includes 36 required items such as capacitors, inductors, resistors, MOSFETs, and integrated circuits. It also lists 8 optional additional components that could be included, such as wires, a breadboard, diodes, variable resistors, and more inductors and capacitors. The total cost of the required components is 161.62 Euros.

Uploaded by

Arsalan Athar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Bill of Material for Half Bridge Driver with GaN

Item Qty Reference Part Description Manufacturer Component Unit Price € Price €
1 2 C1, C11 CAP, CERM, 10 µF, 25 V, +/- 10%, X7R, 1206 Wurth Elektronik 885012208069 0.47 0.94 cap 10uf 25V Orange Mouser
2 2 C2, C14 Feedthru Capacitor, 0.47uF, 6.3V, SMD TDK YFF18PW0J474M 0.35 0.70 cap 0.47uf 6.3V Yellow Farnell
3 2 C3, C19 CAP, CERM, 1 µF, 250 V, +/- 10%, X7R, 2220 MuRata GRM55DR72E105KW01L 0.96 1.92 cap 1uf 250V Green DigiKey
4 5 C4, C5, C12 CAP, CERM, 0.022 µF, 250 V, +/- 10%, X7R, 0805 Taiyo Yuden QMK212B7223KG-T 0.21 1.05 cap 0.02uf 250V White General
5 4 C7, C10, C18, C21 CAP, CERM, 0.22 µF, 250 V, +/- 10%, X7R, 1210 MuRata GRM32DR72E224KW01L 0.77 3.08 cap 0.22uf 250V
6 10 C13 CAP, CERM, 0.1uF, 25V, +/-10%, X7R, 0603 MuRata GRM188R71E104KA01D 0.05 0.50 cap 0.1uf 25V
7 5 D1 Diode, Schottky, 100 V, 0.25 A, SOD-323F NXP Semiconductor BAT46WJ,115 0.33 1.65 shotky diode 100V
8 5 D2, D3 LED, Green, SMD Lite-On LTST-C170KGKT 0.30 1.50 LED green
9 20 H1,H2,H3,H4 Machine Screw, Round, #4-40 x 1/4,Nylon, Philips B&F Fastener Supply NY PMS 440 0025 PH 0.06 1.24
panhead Nil
10 10 H5,H6,H7,H8 Standoff, Hex, 0.5"L #4-40 Nylon Keystone 1902C 0.57 5.67 Nil
11 1 J1 Terminal Block, 2.54mm, 2x1, Brass, TH On-Shore Technology OSTVN02A150 1.49 1.49 Nil
12 10 J2,J5 Terminal Block, 2x1, 5.08mm, TH TE Connectivity 282841-2 0.54 5.35 Nil
13 10 J3, J6, J7 Header, 2.54 mm, 2x1, Gold, TH Sullins Connector Solutions GBC02SAAN 0.24 2.40 Nil
14 2 J4 Header, 100mil, 4x1, Tin, TH TE Connectivity 5-146278-4 0.38 0.76 Nil
15 1 L2 Inductor, Shielded, Composite, 4.7 µH, 10.5 A, Coilcraft XAL8080-472ME 5.66 5.66
0.00889 ohm, SMD Inductor 4.7uH 10.5A
16 2 Q1.Q2 MOSFET, N-CH, 100 V, 25 A, Surface Mount EPC EPC2001 5.87 11.74 EPC2001 GaN
17 2 Q1.Q2 MOSFET, N-CH, 100 V, 25 A, GaN E-mode, GaNPX GaN Systems GS61004B-TR 9.30 18.60
package, Bottom-side cooled GS61004B-TR GaN
18 2 Q1.Q2 MOSFET, N-CH, 200 V, 12A, Surface Mount EPC EPC2010 12.32 24.64 EPC2010 GaN
19 2 Q1.Q2 MOSFET, N-CH, 200 V, 48A, Surface Mount EPC EPC2034 8.48 16.96 EPC 2034 GaN
20 2 Q1.Q2 MOSFET, N-CH, 200 V, 8.5A, Surface Mount EPC EPC2019 3.67 7.34 EPC 2019 GaN
21 2 Q1.Q2 MOSFET 650V, 30A, GaN E-mode, 8x8 PDFN, Bottom- GaN Systems GS-065-030-2-L-TR 11.85 23.70
side cooled GS-065-030-2-L-TR GaN
22 10 R2,R4 RES, 0, 5%, 0.063 W, 0402 Panasonic ERJ-2GE0R00X 0.01 0.13 Res 0 63mW
23 5 R3,R10 RES, 0, 5%, 0.05 W, 0201 Panasonic ERJ-1GE0R00C 0.09 0.43 Res 0 50mW
24 10 R6,R9 RES, 20.0 k, 1%, 0.063 W, 0402 Vishay-Dale CRCW040220K0FKED 0.05 0.52 Res 20K 63mW
25 2 R7 RES, 0.05, 1%, 2 W, 3008 Susumu Co Ltd RL7520WT-R050-F 0.59 1.18 Res 50m 2W
26 4 R11,R12 RES, 20.0 k, 1%, 0.05 W, 0201 Vishay-Dale CRCW020120K0FKED 0.24 0.95 Res 20k 50mW
27 1 R13,R14 TRIMMER 1M OHM 0.25W SMD Bourns 3224X-1-105E 4.24 4.24 VAR Res 1M 250mW
28 10 R15 RES, 1.0k ohm, 5%, 0.1W, 0603 Vishay-Dale CRCW06031K00JNEA 0.05 0.46 Res 1K 100mW
29 5 R16 RES, 100 k, 5%, 0.25 W, 1206 Vishay-Dale CRCW1206100KJNEA 0.18 0.89 Res 100K 250mW
30 2 TP1 Test Point, Compact, Yellow, TH Keystone 05009 0.38 0.76 Nil
31 2 TP2 Test Point, Compact, Red, TH Keystone 05005 0.38 0.76 Nil
32 2 TP4,TP7 Test Point, Compact, Black, TH Keystone 05006 0.38 0.76 Nil
33 4 TP6,TP10 Test Point, Miniature, Red, TH Keystone 05000 0.38 1.52 Nil
34 2 TP13 Test Point, Miniature, Black, TH Keystone 05001 0.39 0.78 Nil
35 2 U1 Advanced eGaN FET 300V Halfbridge Drive, Texas Instruments LMG1210RVR 5.28 10.56 LMG1210RVR Gate Driver
RVR0019A 300V
36 2 U2 Dual Schmitt Trigger Buffer, DBV0006A (SOT-6) Texas Instruments SN74LVC2G17DBVR 0.40 0.80
Schmitt Trigger Buffer for
noise filter
Total 161.62
Optional Components
Item Qty Reference Part Description Manufacturer Component Unit Price € Price €

1 1 Wires Wires - Wires 0.00 0 wires


2 1 Breadboard Breadboard - Breadboard 0.00 0 breadboard
3 1 T1 Transformer 255 VAC to 283 VAC, 48 V, 70KHz- WURTH ELECTRONIC 760895751 22.00 22
120KHz transformer 48V
4 5 D1, D2,D3,D4 Diodes - General Purpose, Power, Switching 200V Toshiba CRG07(TE85L,Q,M) 0.32 1.6
Vrrm 0.5A IF 50Hz .95V Vfm 35ns Diodes
5 1 Rload Variable 1-10ohm load - Variable 1-10ohm 0.00 0 Resistors for Load
6 2 Lr Fixed Inductors WE-HCF 2920 68uH 20% 17A WURTH ELECTRONIC 74437529203680 7.76 15.52
10.3mOhm Inductor for Lr
7 2 Lm Fixed Inductors WE-PD 270uH 1.6A DCR=330mOhms WURTH ELECTRONIC 7447709271 2.04 4.08
AECQ200 Inductor for Lm
8 5 Cr WURTH ELECTRONIC 885342207011 0.09 0.425
Multilayer Ceramic Capacitors MLCC - SMD/SMT
WCAP-CSMH 250V 0.022uF 0805 10% Capacitor for Cr
Total 43.63

Evaluation Board for Half Bridge GaN


Item Qty Reference Part Description Manufacturer Component Unit Price € Price €

1 2 GaN Board Power Management Evaluation Board EPC9003C 5A, EPC EPC9003C 90.00 180
200V, Half Bridge (BOARD DEV FOR EPC2010C 200V
EGAN)
2 2 GaN Board Power Management Evaluation Board EPC9014: 4A, EPC EPC9014 90.00 180
0 ~ 200V, Half H-Bridge (BOARD DEV FOR EPC2019
200V EGAN)
Total 360.00

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