TLP531,TLP532

TOSHIBA Photocoupler GaAs IRed & Photo−Transistor

TLP531,TLP532
Programmable Controllers
Unit in mm
AC / DC−Input Module
Solid State Relay

The TOSHIBA TLP531 and TLP532 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP532 is no−base internal connection for high−EMI environments.

· Collector−emitter voltage: 55 V (min.)

· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 2500 Vrms (min.)
· UL recognized: UL1577, file no. E67349

Pin Configurations (top view)

TOSHIBA 11−7A8

Weight: 0.4g

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Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 70 mA

Forward current derating (Ta ≥ 50°C) ∆IF / °C 0.93 mA / °C

LED

Peak forward current (100 µs pulse, 100pps) IFP 1 A

Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 55 V
Collector-base voltage (TLP531) VCBO 80 V
Emitter-collector voltage VECO 7 V
Emitter-base voltage (TLP531) VEBO 7 V
Detector

Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 mW / °C
Isolation voltage (AC, 1min., R.H.≤ 60%) BVS 2500 Vrms

Recommends Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C

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Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5V ― ― 10 µA
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Collector-emitter
V (BR) CEO IC = 0.5mA 55 ― ― V
breakdown voltage
Emitter-collector
V (BR) ECO IE = 0.1mA 7 ― ― V
breakdown voltage
Collector-base
V (BR) CBO IC = 0.1mA 80 ― ― V
Detector

breakdown voltage (TLP531)

Emitter-base
V (BR) EBO IE = 0.1mA 7 ― ― V
breakdown voltage (TLP531)
VCE = 24V ― 10 100 nA
Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 µA
Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 5mA, VCE = 5V 50 200 600

Rank Y 50 ― 150
Rank YG 50 ― 300
Current transfer ratio IC / IF %
Rank GR 100 ― 300
Rank GB 100 ― 600
Rank BL 200 ― 600
Collector-emitter
VCE (sat) IC = 2.4mA, IF = 8mA ― ― 0.4 V
saturation voltage

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Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
CS VS = 0, f = 1MHz ― 0.8 ― pF
(input to output)
Isolation resistance RS VS = 500V, R.H.≤ 60% 5 ´ 1010 1014 ― Ω
Isolation voltage BVS AC, 1 minute 2500 ― ― Vrms

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 2 ―
Fall time tf VCC = 10V ― 3 ―
IC = 2mA µs
Turn-on time tON RL = 100Ω ― 3 ―
Turn-off time tOFF ― 3 ―
Turn-on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time ts RBE = open ― 15 ― µs
VCC = 5V, IF = 16mA
Turn-off time tOFF ― 25 ―
Turn-on time tON ― 2 ―
RL = 1.9Ω (Fig.1)
Storage time ts RBE = 220kΩ (TLP531) ― 12 ― µs
VCC = 5V, IF = 16mA
Turn-off time tOFF ― 20 ―

Fig. 1 Switching time test circui

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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