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Lecture6 StandardCells 8up

This document contains a lecture summary on standard cells for an advanced digital circuits class. It discusses standard cell basics like inverters and design flows. The lecture covers MOS transistor switching characteristics, effective current calculations for stacks, and examples of planar and FinFET standard cell layouts. Homework 1 was assigned and is due on February 17, with no class scheduled for February 18 due to a conference.

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Lohith Dharavath
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0% found this document useful (0 votes)
55 views6 pages

Lecture6 StandardCells 8up

This document contains a lecture summary on standard cells for an advanced digital circuits class. It discusses standard cell basics like inverters and design flows. The lecture covers MOS transistor switching characteristics, effective current calculations for stacks, and examples of planar and FinFET standard cell layouts. Homework 1 was assigned and is due on February 17, with no class scheduled for February 18 due to a conference.

Uploaded by

Lohith Dharavath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

inst.eecs.berkeley.

edu/~ee241b
Announcements

EE241B : Advanced Digital Circuits • Homework 1 posted, due on February 17


• No class on February 18 (ISSCC)
Lecture 6 – Standard Cells
Borivoje Nikoliü
IEEE International Solid-State Circuits Conference. San Francisco, February 16-21,
2020. Preview in the IEEE Solid-State Circuits Magazine, Winter 2020.

EECS241B L06 STANDARD CELLS 1 EECS241B L06 STANDARD CELLS 2

Outline
• Module 2
• Standard cells
• Gate delay
• Design flows

2.I Delay Revisited

EECS241B L06 STANDARD CELLS 3 EECS241B L06 STANDARD CELLS 4

MOS Transistor as a Switch (EECS251A) MOS Transistor as a Switch (EE241A)

Traversed path
Solving the integral:

with appropriately calculated Idsat

Averaging resistances:

EECS241B L06 STANDARD CELLS 5 EECS241B L06 STANDARD CELLS 6

CMOS Performance Switching Trajectory

6.0E-04

Propagation delay: t pHL ln 2 ReqnCL t pLH ln 2 ReqpC L


5.0E-04

ln2 = 0.7
4.0E-04

IDS[A]
3.0E-04

2.0E-04

1.0E-04

0.0E+00
0.2 0.4 0.6 0.8 1.0

VDS[V]
EECS241B L06 STANDARD CELLS 7 EECS241B L06 STANDARD CELLS 8
Effective Current DIBL Matters
• Ion(VDD) is never reached • A. Loke, VLSI’16
FinFET, FDSOI – less DIBL
• Define Ieff = (IH + IL)/2
• IL = IDS(VGS=VDD/2, VDS=VDD); IH=IDS(VGS=VDD, VDS=VDD/2),

Na, IEDM’2002
Von Arnim, IEDM’2007
EECS241B L06 STANDARD CELLS 9 EECS241B L06 STANDARD CELLS 10

Transistor Stacks Effective Current in Stacks

6.0E-04
Add linear current, I3
5.0E-04

4.0E-04

IDS[A]
3.0E-04

2.0E-04

1.0E-04

0.0E+00 Von Arnim, IEDM’2007


0.2 0.4 0.6 0.8 1.0

VDS[V]
EECS241B L06 STANDARD CELLS 11 EECS241B L06 STANDARD CELLS 12

Standard Cell Inverter


• Schematic and layout
N Well
(in a planar bulk process) VDD

VDD PMOS 2O

Contacts
PMOS
2.J Standard Cells In Out
In Out
Metal 1
Polysilicon
NMOS

NMOS
GND
• Pitches are integer multiples of O
EECS241B L06 STANDARD CELLS 13 EECS241B L06 STANDARD CELLS 14

Two Inverters FinFET Standard Cells


ASAP7
Share power and ground

Abut cells

VDD Connect in Metal

Delay is additive
V. Vashishtha, ICCAD’17
EECS241B L06 STANDARD CELLS 15 EECS241B L06 STANDARD CELLS 16
ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 17 EECS241B L06 STANDARD CELLS 18

ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 19 EECS241B L06 STANDARD CELLS 20

ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 21 EECS241B L06 STANDARD CELLS 22

ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 23 EECS241B L06 STANDARD CELLS 24


ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 25 EECS241B L06 STANDARD CELLS 26

ASAP7 Standard Cells ASAP7 Standard Cells

EECS241B L06 STANDARD CELLS 27 EECS241B L06 STANDARD CELLS 28

ASAP7 Latch FinFET Standard Cells

V. Moroz, Semicon Taiwan, 2016

EECS241B L06 STANDARD CELLS 29 EECS241B L06 STANDARD CELLS 30

Design Kit Components EE241B Technology


• Physical views • ASAP7 7nm predictive technology kit
• Layout and schematic, with abstractions • Also available Synopsys 32/28nm Generic Library
• Netlist • Multi-vth Standard Cell Library 45 IO pads
• Logical view • SRAMs
• Test view • Design rule manual
• Timing, power and noise views
• Documentation

EECS241B L06 STANDARD CELLS 31 EECS241B L06 STANDARD CELLS 32


Servers to Use
• Please use the instructional servers
• Labs may not be up to date on BWRC machines
• Servers to use:
• c152m-{1-15}.eecs.berkeley.edu
• eda-{1-8}.eecs.berkeley.edu
2.K Class Design Flow
• Other servers may be missing tools / may be using a different version!
• EECS instructional website is helpful!
• http://inst.eecs.berkeley.edu/~inst/iesglabs.html

EECS241B L06 STANDARD CELLS 33 EECS241B L06 STANDARD CELLS 34

Text Editors/Other commands and tools Getting Started: Logging in


• Learn to use vim • From terminal:
• gvim, emacs are some alternatives • ssh –Y <username>@<server>
• You will not be sorry! • Instructional account login
• Gedit can cause some issues • From Windows:
• Use tmux • Can use putty
• Other unix commands • Linux subsystem
• ls, cd, cp, rm, mkdir, tar, grep, … • Can also you x2go to connect to a remote desktop
• Life skills!

EECS241B L06 STANDARD CELLS 35 EECS241B L06 STANDARD CELLS 36

Setting up your environment Instructional Tools and Technology


• Can work in home directory for basic things • Most tools can be found in /share/instww/{cadence or synopsys}
• Move to /scratch/ (local to each machine) for running the labs • ASAP7 technology new for this semester
• Make your own directory here to work in • Open predictive PDK
• Follow the directions in the lab • Can be found in ~ee241/spring20-labs/
• Clone the lab • Lab requires you to look at technology (and maybe some tool manuals)
• Tools are configured as submodules • Manuals are your friend!
• Run git submodule update –init –recursive to initialize the submodules • They can usually be found in a docs/ folder in the tool directory.
• Need to source sourceme.sh every time you reinitialize
• Sets up some Hammer variables
• Sources course .bashrc

EECS241B L06 STANDARD CELLS 37 EECS241B L06 STANDARD CELLS 38

git Lab Preview


• Version control • Update for this semester
• Another important “learn to use” • Converted to use Hammer and ASAP7
• Please post on Piazza and come to office hours if you run into issues
• Shouldn’t need much advanced use for this class but it is a lifeskill! • Baseline overview of a portion of the VLSI flow
• git clone • Simulation, synthesis, P&R
• Initialize • Looking at log files, reports, etc. to understand the design and tools
• git submodule update –init –recursive • It’s about telling the tools what it wants to hear
• Initialize all submodules • What’s missing?
• Only need to run once in this context • Discussed in the summary
• DRC, LVS, more advanced power analysis, much more!
• Pay attention to lecture and think about how you can integrate into the flow
EECS241B L06 STANDARD CELLS 39 EECS241B L06 STANDARD CELLS 40
Lab Preview (continued) Next Lecture
• Hammer • Library characterization
• https://github.com/ucb-bar/hammer • Static timing
• Python framework for physical design
• Separation of concerns to enable reuse
• What are these hammer-cadence-plugins and hammer-synopsys-plugins?
• Tool specific implementations of APIs
• Not publicly available so do not share!
• So where’s the technology plugin?
• hammer/src/hammer-vlsi/technology/asap7/
• ASAP7
• Take a look at the files!
EECS241B L06 STANDARD CELLS 41 EECS241B L06 STANDARD CELLS 42

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