Lecture6 StandardCells 8up
Lecture6 StandardCells 8up
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Outline
• Module 2
• Standard cells
• Gate delay
• Design flows
Traversed path
Solving the integral:
Averaging resistances:
6.0E-04
ln2 = 0.7
4.0E-04
IDS[A]
3.0E-04
2.0E-04
1.0E-04
0.0E+00
0.2 0.4 0.6 0.8 1.0
VDS[V]
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Effective Current DIBL Matters
• Ion(VDD) is never reached • A. Loke, VLSI’16
FinFET, FDSOI – less DIBL
• Define Ieff = (IH + IL)/2
• IL = IDS(VGS=VDD/2, VDS=VDD); IH=IDS(VGS=VDD, VDS=VDD/2),
Na, IEDM’2002
Von Arnim, IEDM’2007
EECS241B L06 STANDARD CELLS 9 EECS241B L06 STANDARD CELLS 10
6.0E-04
Add linear current, I3
5.0E-04
4.0E-04
IDS[A]
3.0E-04
2.0E-04
1.0E-04
VDS[V]
EECS241B L06 STANDARD CELLS 11 EECS241B L06 STANDARD CELLS 12
VDD PMOS 2O
Contacts
PMOS
2.J Standard Cells In Out
In Out
Metal 1
Polysilicon
NMOS
NMOS
GND
• Pitches are integer multiples of O
EECS241B L06 STANDARD CELLS 13 EECS241B L06 STANDARD CELLS 14
Abut cells
Delay is additive
V. Vashishtha, ICCAD’17
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ASAP7 Standard Cells ASAP7 Standard Cells