Clocked and Dynamic CMOS
Clocked and Dynamic CMOS
積體電路概論
Chapter 09
Advanced Techniques in CMOS Logic Circuits
賴秉樑
Dept. of Electronic Engineering
National Chin-Yi University of Technology
Fall 2007
(a) Circuit
(b) Layout
Figure 9.1 XOR function table
Figure 9.2 XOR mirror circuit
Introduction to VLSI Circuits and Systems, NCUT 2007
XOR & XNOR
The advantages of the mirror circuit are
more symmetric layouts and shorter rise
and fall times
t r ≈ 2.2τ p (9.2)
t f ≈ 2.2τ n (9.3)
βp
VOL = (VDD − VTn ) − (VDD − VTn )2 − (V − VTp
β n DD
)
2
(9.5)
Figure 9.6 Pseudo-nMOS inverter
Introduction to VLSI Circuits and Systems, NCUT 2007
nFET Array in Pseudo-nMOS
The design of nFET array of pseudo-nMOS is the
same as in standard CMOS
» Series and parallel logic FETs
» Smaller simpler layouts, and interconnect is much simpler
» However, the sizes need to be adjusted to insure proper
electrical coupling to the next stage
» Resize in physical design (a) General circuit
Figure 9.7 Pseudo-nMOS NOR and NAND gates Figure 9.8 AOI gate
Figure 9.9 Tri-state inverter Introduction to VLSI Circuits and Systems, NCUT 2007
Outline
Mirror Circuits
Pseudo-nMOS
Tri-State Circuits
Clocked CMOS
Dynamic CMOS Logic Circuits
Dual-Rail Logic Networks
⇒ φ (t ) = VDD − φ (t ) (9.10)
(a) NAND2
⎛ IL ⎞
V (t )
∫ dV = − ∫ ⎜⎜⎝ C
t
⎟⎟dt (9.13)
out ⎠
0
V1 (b) Logic 1 voltage decay
⎛ 50 × 15−15 ⎞
th = ⎜⎜ −9
⎟⎟(1) = 50 µ sec (9.20)
⎝ 10 ⎠
⎛ 50 × 15−15 ⎞
th = ⎜⎜ −7
⎟⎟(1) = 0.5 µ sec (9.21)
⎝ 10 ⎠
I L (V ) = −Cout (V )
dV (9.22)
dt
t V (t )
(b) Logic 1 voltage decay
∫ dt = ∫
Cout (V )
dV = t (9.23)
0 Vx
I L (V ) Figure 9.15 Charge leakage problem
Introduction to VLSI Circuits and Systems, NCUT 2007
Outline
Mirror Circuits
Pseudo-nMOS
Tri-State Circuits
Clocked CMOS
Dynamic CMOS Logic Circuits
Dual-Rail Logic Networks
f = a ⋅b⋅c (9.24)
When f = 1, charge leakage reduces the voltages held on the output node
f1 = G
(9.33)
f2 = F ⋅ G
Figure 9.24 Visualization of the domino effect Figure 9.26 Structure of a MODL circuit
Dual-rail logic: both the variable x and its complement x are used to form
the difference
f x = ( x − x) (9.35)
df x ⎛ dx d x ⎞
=⎜ − ⎟ (9.36)
dt ⎜⎝ dt dt ⎟⎠
dx dx
≈− (9.37)
dt dt
df x dx
≈2 (9.38)
dt dt
(a) AND/NAND
f = a ⋅b + a ⋅a (9.41)
(a) AND gate (b) AND/NAND array
⇒ a ⋅b + a = a + b = a ⋅b (9.42)
Figure 9.32 CPL AND/NAND circuit