GD150FFY120C6S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD150FFY120C6S
1200V/150A 6 in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 1/9 SF0C

GD150FFY120C6S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT
Symbol Description Values Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 224
IC A
@ TC=95oC 150
ICM Pulsed Collector Current tp=1ms 300 A
PD Maximum Power Dissipation @ Tj=175oC 714 W

Diode
Symbol Description Values Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 150 A
IFM Diode Maximum Forward Current tp=1ms 300 A

Module
Symbol Description Values Unit
o
Tjmax Maximum Junction Temperature 175 C
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD150FFY120C6S IGBT Module

IGBT Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=150A,VGE=15V,
1.70 2.15
Tj=25oC
Collector to Emitter IC=150A,VGE=15V,
VCE(sat) 1.95 V
Saturation Voltage Tj=125oC
IC=150A,VGE=15V,
2.00
Tj=150oC
Gate-Emitter Threshold IC=3.75mA,VCE=VGE,
VGE(th) 5.2 6.0 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 5.0 Ω
Cies Input Capacitance 10.5 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.60 nF
Capacitance
QG Gate Charge VGE=-15﹍+15V 1.30 μC
td(on) Turn-On Delay Time 123 ns
tr Rise Time 27 ns
td(off) Turn-Off Delay Time 407 ns
VCC=600V,IC=150A,
tf Fall Time 66 ns
RG=1.1Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25oC 5.35 mJ
Loss
Turn-Off Switching
Eoff 11.0 mJ
Loss
td(on) Turn-On Delay Time 139 ns
tr Rise Time 32 ns
td(off) Turn-Off Delay Time 495 ns
VCC=600V,IC=150A,
tf Fall Time 116 ns
RG=1.1Ω,VGE=±15V,
Turn-On Switching
Eon Tj=125oC 9.63 mJ
Loss
Turn-Off Switching
Eoff 16.5 mJ
Loss
td(on) Turn-On Delay Time 144 ns
tr Rise Time 32 ns
td(off) Turn-Off Delay Time 528 ns
VCC=600V,IC=150A,
tf Fall Time 138 ns
RG=1.1Ω,VGE=±15V,
Turn-On Switching Tj=150oC
Eon 10.7 mJ
Loss
Turn-Off Switching
Eoff 17.6 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 600 A
VCEM≤1200V

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 3/9 SF0C

GD150FFY120C6S IGBT Module

Diode Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
IF=150A,VGE=0V,Tj=25oC 1.65 2.10
Diode Forward
VF IF=150A,VGE=0V,Tj=125oC 1.65 V
Voltage
IF=150A,VGE=0V,Tj=150oC 1.65
Qr Recovered Charge 13.3 μC
Peak Reverse VR=600V,IF=150A,
IRM 209 A
Recovery Current -di/dt=5800A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 6.65 mJ
Energy
Qr Recovered Charge 23.8 μC
Peak Reverse VR=600V,IF=150A,
IRM 228 A
Recovery Current -di/dt=5800A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 10.9 mJ
Energy
Qr Recovered Charge 26.6 μC
Peak Reverse VR=600V,IF=150A,
IRM 238 A
Recovery Current -di/dt=5800A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 12.8 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100oC,R100=493.3Ω -5 5 %
P25 Power Dissipation 20.0 mW
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 21 nH
RCC’+EE’ Module Lead Resistance, Terminal to Chip 1.80 mΩ
Junction-to-Case (per IGBT) 0.210
RthJC K/W
Junction-to-Case (per Diode) 0.329
Case-to-Heatsink (per IGBT) 0.088
RthCH Case-to-Heatsink (per Diode) 0.139 K/W
Case-to-Heatsink (per Module) 0.009
M Mounting Torque, Screw M6 3.0 6.0 N.m
G Weight of Module 300 g

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 4/9 SF0C

 GD150FFY120C6S IGBT Module

300 300
VGE=15V VCE=20V
250 250

200 200

25oC
IC [A]

IC [A]
150 125oC 150

100 100

125oC
50 50 25oC

0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]

Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics

35 30
VCC=600V
30 RG=1.1Ω
25
VGE=±15V Eon
Tj=125oC
25
20
20
E [mJ]

E [mJ]

Eoff 15
Eoff
15
10 VCC=600V
10
IC=150A
Eon VGE=±15V
5 5
Tj=125oC

0 0
0 50 100 150 200 250 300 0 2 4 6 8 10 12
IC [A] RG [Ω]

Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 5/9 SF0C

 GD150FFY120C6S IGBT Module

350 1
Module
300 IGBT

250
0.1

ZthJC [K/W]
200
IC [A]

150
0.01
100
RG=1.1Ω
i: 1 2 3 4

50 VGE=±15V ri[K/W]: 0.0127 0.0693 0.0672 0.0608

τi[s]: 0.01 0.02 0.05 0.1
Tj=125oC

0 0.001
0 200 400 600 800 100012001400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance

300 15

250
12
Erec
200
9
E [mJ]
IF [A]

150

125oC 6
100 VCC=600V
RG=1.1Ω
3 VGE=-15V
50 25oC
Tj=125oC

0 0
0 0.5 1 1.5 2 2.5 0 50 100 150 200 250 300
VF [V] IF [A]

Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 6/9 SF0C

 GD150FFY120C6S IGBT Module

12 1

10 Erec Diode

ZthJC [K/W]
E [mJ]

6 0.1

4
VCC=600V
IF=150A i: 1 2 3 4
2 VGE=-15V ri[K/W]: 0.0198 0.1086 0.1052 0.0954
τi[s]: 0.01 0.02 0.05 0.1
Tj=125oC

0 0.01
0 2 4 6 8 10 12 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance

100

10
R [kΩ]

0.1
0 30 60 90 120 150
o
TC [ C]

Fig 11. NTC Temperature Characteristic

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 7/9 SF0C

GD150FFY120C6S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

27 24 21 19
30

16
33

13

1 3 5 7 9 11

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 8/9 SF0C

GD150FFY120C6S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
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characteristics.

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or which concerns the specific application of our product, please contact the sales office,
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interested we may provide application notes.

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information on the types in question please contact the sales office, which is responsible for
you.

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Changes of this product data sheet are reserved.

©2017 STARPOWER Semiconductor Ltd. 3/10/2017 9/9 SF0C