AON6926

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

The AON6926 is designed to provide a high efficiency Q1 Q2

synchronous buck power stage with optimal layout and VDS 30V 30V
board space utilization. It includes two specialized ID (at VGS=10V) 44A 50A
MOSFETs in a dual Power DFN5x6A package. The Q1
RDS(ON) (at VGS=10V) <11mΩ <8.5mΩ
"High Side" MOSFET is desgined to minimze switching
losses. The Q2 "Low Side" MOSFET is an SRFET™ that RDS(ON) (at VGS = 4.5V) <14mΩ <12mΩ
features low RDS(ON) to reduce conduction losses as well as
an integrated Schottky diode with low QRR and Vf to reduce 100% UIS Tested
switching losses. The AON6926 is well suited for use in 100% Rg Tested
compact DC/DC converter applications.

DFN5X6
Top View Bottom View

PIN1
Top View BottomView
Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TC=25°C 44 50
ID
Current TC=100°C 28 32 A
Pulsed Drain Current C IDM 100 140
Continuous Drain TA=25°C 11 12
IDSM A
Current TA=70°C 9 10
Avalanche Current C IAS, IAR 27 15 A
Avalanche Energy L=0.1mH C EAS, EAR 36 11 mJ
TC=25°C 31 35
PD W
Power Dissipation B TC=100°C 12.5 14
TA=25°C 1.9 2.1
PDSM W
Power Dissipation A TA=70°C 1.2 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
A
Maximum Junction-to-Ambient t ≤ 10s 29 24 35 29 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 56 50 67 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.4 3 4 3.6 °C/W

Rev0 : July 2010 www.aosmd.com Page 1 of 1

 AON6926

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=125°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=20A 8.8 11
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12 15
VGS=4.5V, ID=20A 11.2 14 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 55 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 35 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 1150 1380 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 125 180 235 pF
Crss Reverse Transfer Capacitance 60 105 150 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 16 20 24 nC
Qg(4.5V) Total Gate Charge 7 9.5 11.4 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2.7 nC
Qgd Gate Drain Charge 5 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : July 2010 www.aosmd.com Page 2 of 10

 AON6926

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

140 100
10V VDS=5V
120 4.5V
80
100
4V
60
80
ID (A)

ID(A)
60 3.5V
40

40 125°C

VGS=3V 20
20 25°C

0 0
0 1 2 3 4 5 0.5 1.5 2.5 3.5 4.5 5.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

14 1.6
VGS=10V
12 Normalized On-Resistance ID=20A
VGS=4.5V
1.4
RDS(ON) (mΩ)

10
17
1.2 VGS=4.5V 5
8 ID=20A
VGS=10V 2
1 10
6

4 0.8
0 5 1015 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
125°C 25°C
RDS(ON) (mΩ)

15 125°C 1.0E-01
IS (A)

1.0E-02
10
1.0E-03
25°C
5
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0: July 2010 www.aosmd.com Page 4 of 10

 AON6926

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1600
VDS=15V
ID=20A 1400
8 Ciss
1200

Capacitance (pF)
1000
VGS (Volts)

6
800
4 600

400
2 Coss
200
Crss
0 0
0 2 4 6 8
10 12 14 16 18 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs TC=25°C
RDS(ON)
Power (W)
ID (Amps)

10.0 120
limited 100us
DC
1.0 1ms 80
10ms
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
Thermal Resistance

RθJC=4°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6926

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 35
TA=25°C
IAR (A) Peak Avalanche Current

30
TA=100°C

Power Dissipation (W)

25
TA=125°C
20
TA=150°C
15

10

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

50 10000

TA=25°C
40 1000
Current rating ID(A)

Power (W)

30 17
100 5
2
20
10
10
10
1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=67°C/W 40

0.1

PD
0.01

Single Pulse Ton

T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: July 2010 www.aosmd.com Page 6 of 10

 AON6926

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.9 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 140 A
VGS=10V, ID=20A 6.9 8.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.8 12
VGS=4.5V, ID=20A 9.3 12 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.5 0.7 V
IS Maximum Body-Diode Continuous Current 40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 900 1130 1360 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 320 465 605 pF
Crss Reverse Transfer Capacitance 12 40 70 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.35 0.7 1.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 16 20 nC
Qg(4.5V) Total Gate Charge 6 8 10 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 3 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 23 28 nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : July 2010 www.aosmd.com Page 3 of 10

 AON6926

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V
4.5V VDS=5V
80 4V 80

60 60
ID (A)

3.5V

ID(A)
40 40
125°C 25°C
VGS=3V
20 20

0 0
0 1 2 3 4 5 1 2 3 4 5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

15 1.8

12 Normalized On-Resistance 1.6

VGS=4.5V VGS=10V
ID=20A
RDS(ON) (mΩ)

9 1.4
17
5
6 1.2
2
VGS=10V VGS=4.5V
10
ID=20A
3 1

0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

25 1.0E+02
ID=20A
1.0E+01
20
40 125°C
1.0E+00
RDS(ON) (mΩ)

15
1.0E-01
IS (A)

125°C 25°C
10 1.0E-02

1.0E-03
5
25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6926

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1800

1600
VDS=15V
8 ID=20A 1400
Ciss

Capacitance (pF)
1200
VGS (Volts)

6
1000

800
4
600
Coss
2 400

200 Crss

0 0
0 3 6 9 12 15 18 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs
RDS(ON) TC=25°C
limited 100µs
Power (W)
ID (Amps)

10.0 120
DC 1ms
1.0 10ms 80

TJ(Max)=150°C
0.1 TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
Thermal Resistance

RθJC=3.6°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev0 : July 2010 www.aosmd.com Page 8 of 10

 AON6926

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 40
TA=25°C
IAR (A) Peak Avalanche Current

35

Power Dissipation (W)

TA=100°C 30

25
TA=125°C
20
TA=150°C
15

10

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

60 10000

50 TA=25°C
1000
Current rating ID(A)

40
17
Power (W)

30 100 5
2
20 10
10
10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Ton
Single Pulse T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

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 AON6926

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: July 2010 www.aosmd.com Page 10 of 10