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Physics Project

This document summarizes a physics project on studying the effect of temperature on the resistance of a semiconductor diode. It includes an aim, certificate of completion, acknowledgements, introduction on semiconductors, theory on doping and PN junctions, materials used, experimental procedure measuring resistance at different temperatures, observations recorded in a table, results showing resistance decreases with increasing temperature, and precautions taken.

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Ganisha Singh
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0% found this document useful (0 votes)
131 views

Physics Project

This document summarizes a physics project on studying the effect of temperature on the resistance of a semiconductor diode. It includes an aim, certificate of completion, acknowledgements, introduction on semiconductors, theory on doping and PN junctions, materials used, experimental procedure measuring resistance at different temperatures, observations recorded in a table, results showing resistance decreases with increasing temperature, and precautions taken.

Uploaded by

Ganisha Singh
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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PHYSICS

PROJECT

By: Charvi Khambra


XII-D
AIM
To study the effect of temperature on the
resistance of semiconductor diode
CERTIFICATE
this is to certify that CHARVI KHAMBRA, student of
class 12-A, Delhi Public School Mathura Road has
successfully completed her project on the topic 'Effect
of temperature on resistance of semiconductor diode'
during the academic year 2022-23 under the guidance
of the physics department for CBSE higher secondary
examinations.
ACKNOWLEDGEMENT
I feel proud to present my investigatory project in
physics on the topic Effect of temperature on the
resistance of semiconductor diode
It gives me great pleasure expressing my sincere thanks
and deep sense of gratitude to respected teacher Mr.
Pawan Gautam for her valuable guidance, support and
encouragement for the fulfilment of this project.
I would also like to extend my gratitude to out Lab
Assistant, Mr. Vimal Pathak for putting tremendous
effort from his side to assist me during the course of the
project.
INDEX
INTRODUCTION
o Semiconductors

o Conductors

o insulators

THEORY
o Intrinsic semiconductors

o Doping

o N-type

o P-type

o Energy bands

o Course of conduction

o Holes

o Formation of holes

o P-n junction

o Depletion region

MATERIAL REQUIRED
PROCEDURE
OBSERVATION TABLE
RESULT
PRECAUTIONS
INTRODUCTION
o Semiconductors
These are the substances which are insulators at
zero kelvin but they become conductors when some
energy is given to them.

o Conductors
The substances which conduct electricity even at
zero kelvin. There is no forbidden gap. Fermi level
acquires little energy and behaves as free electron.

o Insulators
These substances do not conduct electricity even at
room temperature. They have completely filled
valence band, empty conduction band, and large
energy gap impossible to be passed by any
electron.
THEORY
 Intrinsic semiconductor
A pure semiconductor free from any conductor impurity
condition due to electron excitation from valence band.

 Doping
The deliberate addition of desirable impurity in a pure
semiconductor to modify its properties in a controlled
manner. The dopant should take position of
semiconductor in lattice, its size should almost be same.
It is added in the melt of semiconductor in atmosphere
of dopant or by bombarding semiconductor with the
dopant.

 N-type
A pure silicon semiconductor doped with phosphorus
forming four covalent bonds while the fifth electron is
loosely bonded to parent impurity atoms.

 P-type
A pure silicon semiconductor doped with aluminium
taking an electron from Si-Si bond to complete Al-Si
bonds. Holes are the majority carriers.
 Energy Bands
Course of an electron is an isolated atom and has
definite discrete energy in different shells and sub-
shells which gets modified due to their atomic
interactions. The spreading of energy corresponding to
3s and 3p level reduces energy gap existing between
them. This collection of closely packed levels separated
by energy gap called forbidden energy gap. The lower
filled band is not conduction but valance band. The
upper filled band is called the conduction band.

 Conduction
Motion of electrons in conduction bands and holes in
valence band is cause for electrical conduction.

 Holes
Hole is an active particle in the valence band similar to
electron in the conduction band. It is considered as
positive charge having charge equal to that of an
electron.

 Formation of Hole
The atoms in the structure are strongly held by covalent
bond. On receiving additional energy one by one the
electrons contributing to covalent bond breaks and is
free to move in the whole lattice. While coming out, it
leaves a space having a positive charge and is called a
hole.

• P-N Junction
Formation of P-type semiconductor on a N-type
semiconductor from thin slices of these by heating them
to a temperature of 580°C.

• Depletion Region
The region in which no free charge carriers are
available due to migration of change carries across the
junction. After further diffusion of carriers in opposite
region is stopped, is depletion region. In P-N junction
electrons diffuse from N-P region. The accumulation of
electrical charges of opposite polarities gives rise to an
electrical field. Width of depletion region depends on
semiconductor and its doping concentration and the
type of biasing.
MATERIAL REQUIRED
o Multi-Purpose Meter
o Semiconductor Diode
o Laboratory Thermometer
o Coconut Oil
o Iron Stand
o Water Bath
o Tripod Stand
o Beaker
PROCEDURE
o Take a beaker and fill it with coconut oil.

o Place the beaker on a tripod stand.

o Dip a laboratory thermometer in the beaker.

o Connect the semiconductor diodes to the


multimeter using connecting wires.

o Dip both ends of the semiconductor diode in the oil


kept in the beaker.

o Heat the apparatus in water bath to 70°C and let it


cool.

o Note the values of resistance of semiconductor


diode on different values of temperature.
OBSERVATION

TEMPERATURE RESISTANCE
(IN CELCIUS)
25 395
30 393
35 384
40 377
45 366
50 357
55 348
60 335
65 328
70 316
RESULT
The experiment shows that resistance of semiconductor
diode decreases with increase in temperature and it
increases with decrease in temperature. Thus,
temperature co-efficient for a semiconductor is
negative.

PRECAUTIONS

o Don't heat the apparatus directly.


o Bulb of thermometer should not touch the bottom
of the beaker.
o The temperature should not exceed 70°C

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