Answers of Sample Paper 5 10 Physics 12

nswers
Sample Paper-5
1. (d) zero
But there is no change of flux with time, as B, A and
The electric field at the centre of pentagon would be
dφ
zero. q all remain constant with time i.e., dt = 0
2. (a) spheres
∴ No current is induced.
For a collection of charges, whose total sum is not
10. (b) 6.0 mm
zero, equipotentials at large distances must be Given, d = 0.1 mm = 0.1 × 10 m
-3
spheres only. l = 600 nm and D = 1 m

3. (d) (i I = i III) < i II Separation between bright fringes (fringe width)
l Dλ 1 × 600 × 10−9
We know that, R = ρ
β= =
A d 0.1 × 10−3
L
-3
= 6.0 × 10 m = 6.0 mm
∴ RI = ρ
...(1)
A
11. (b) h/e
1.5L L h φ
RII = ρ = 3ρ ...(2) Since V0 = ν− 0
A /2 A e e

L /2 L
RIII = ρ = ρ ...(3) 12. (b) U = -2K
A /2 A

1 e2
Using eqs. (1), (2) and (3), we can say that Kinetic energy, K = mv 2 =
2 8πε0r
RII > (RI = RIII )
e2
and Potential energy, U = −
From Ohm’s law, we know that V = IR when same 4πε0r
potential difference is applied ⇒ U = -2K
l
I∝ 13. (d) fission
R
14. (c) 200 V
∴ (iI = iIII ) < iII
Here, VL = VC = 100 V, V = 200 V
4. (c) The rate of heating As V = VR2 + (VL − VC )2

→
5. (c) The magnitude of B at (0, 0, z), z >> R increases. ∴ 200 = VR2 + (100 − 100)2 or VR = 200 V

-2
6. (a) 4.8 × 10 Nm
Torque, t = MBsinq 15. (b)
M = 1.28 JT , B = 7.5 × 10 T, q = 30°
-1 -2
Here,
-2
∴ t = 1.28 × 7.5 × 10 × sin 30° E
1
E or V
-2 V
= 1.28 × 7.5 × 10 ×
2
= 0.64 × 7.5 × 10-2 = 4.8 × 10-2 Nm
7. (a) T1 > T2 r
The slope of V-I graph gives the resistance of a 16. (a) In semiconductors, the energy gap between
conductor at a given temperature. From the graph, it
conduction band and valence band is small (≈ 1 eV).
follows that resistance of a conductor at temperature
T1 is greater than at temperature T2. As the resistance Due to temperature rise, electron in the valence band
of a conductor is more at higher temperature and less gained thermal energy and may jump across the
at lower temperature, hence T1 > T2. small energy gap, goes in to the conduction band.
8. (a) The total current has the same value of current for Thus conductivity increases and hence resistance
all surfaces. decreases.
9. (d) zero 17. (c) This happens due to the phenomenon of diffraction.
dφ It is a general characteristics exhibited by all types
|e | dt of waves, sound waves, light waves, water waves or
Induced current,=I =
R R matter waves.
2 | amadhaan PHYSICS Class XII
18. (b) There is no emission of photoelectrons till the assume that the medium on the both sides of the lens
frequency of incident light is less than a minimum is same.
frequency, however intense light it may be. The formula of reflection.

In photoelectric effect, it is a single particle collision. 1 1  1 1 
- = (m - 1)  -  ...(1)
Intensity is hn × N, where hn is the individual energy v u R R 
 1 2
of the photon and N is the total number of photon.
We know that, when an object is placed at infinity, its
In the wave theory, the intensity is proportional, not
2 image will formed on second focus i.e., when u = ∞
only to n but also to the square of amplitude. For the
then v = f.
same frequency, increase in intensity only increase
the number of photons (in the quantum theory of 1 1  1 1 
Hence, - = (m - 1)  - 
f ∞  
Einstein).  R1 R2 
19. (i) Infrared rays maintain the earth’s warmth. 1  1 1 
⇒ = (m - 1)  -  ...(2)
(ii) Microwaves are used in aircraft navigation. f R R 
 1 2
m0I m0 3 I This is called lens maker’s formula.
20.
= BP and
= BQ = BP 3
2R 2R Now, from eqs. (1) and (2), we get
1 1 1
⇒ B= BP2 + BQ2 = BP2 + (BP 3)2 = -
f v u
Q
BP B This is the formula of focal length of thin lens.
Q
R T!p
P
When u = ∞, v = f
O R
P BQ
23. (i) From the given curve, we have
Voltage, V = 0.7 volt for current,
m0 I m0 I I = 15 mA for voltage,
⇒ B = BP 1 + 3 = 2 × =
2R R V 0. 7

∴ Resistance, = = 47Ω
BP BP I 15 × 16−3
1
tan=
q = =
BQ B 3 3 (ii) For V = -10V, we have
P
I = -1mA = - 1 × 10-6 A
⇒ q = 30° with BQ.
10
21. Bohr’s Postulate of Transition: When an electron ⇒ R =
= 1 . 0 × 107 Ω
1 × 10−6
makes a transition from higher energy level (E2) to
lower energy level (E1), a photon is emitted which Or
have the energy equal to the energy difference of two
levels,
A rectifier is used to convert alternating current into
direct current, whose labelled circuit is given below.
i.e., h=
n E2 -E1
Centre tap transformer
A D1
This equation is called Bohr’s frequency condition.
Centre tap
Or X
B
R2 Output
No; because according to Bohr’s model, energy of D2
electron in nth orbit of H-atom, Y
13.6 Circuit diagram of full wave rectifier.
En = -
n2

Working
Hence, electrons having different energies belong to During the positive half cycle of the input AC, the diode
different energy levels, i.e., different values of n.
D1 is forward biased and the diode D2 is reverse biased.
Therefore, their angular momentum will be different The forward current flows through diode D1.
due to different values of n as
During the negative half cycle of the input AC, the
nh
Angular momentum,
= L m
=υr diode D1 is reverse biased and diode D2 is forward
2p
biased. Thus, current flows through diode D2. Thus, we
22. A lens is called thin lens when its thickness is negligible find that during both the halves, current flows in the
in comparison of its radius of curvature. Here, we same direction.
amadhaan PHYSICS Class XII | 3
dB⊥ components due to diametrically opposite

components cancel out. Only dB x components
refrain,
m0Idl
dBx= ⋅ cos q
4 pr 2
B = ∫ dBx

µ0IR 2
B= , along X -axis
2(R 2 + x 2 )3/2

–3
27. Given, L = 100 mH = 100 × 10 H,
–6
C = 2µF = 2 × 10 F, ω = 1000 rad/s and R = 400 Ω
24. (i) Reflected wavefront from a concave mirror:  1 
 ωL - 
ωC 
(i) For phase difference, tan φ = 
R
[where, φ is phase difference between current
and voltage]
∵ ω = 1000 ⇒ ωL = 1000 × 100 × 10–3 = 100 Ω

1 1 1
= = = 500 Ω
ωC 1000 × 2 × 10-6
2 × 10-3

(ii) Reflected wavefront from a convex mirror:
100 - 500 - 400
⇒ tan φ = = = -1
400 400
⇒ φ = tan–1 (–1) ⇒ φ = 135°
1
Since, ωL <
or X L < XC
ωC

Therefore, current is leading in phase by a phase
angle 135°.
(ii)
For unit power factor, cos φ = 1
R
⇒ =2
2
25. Two limitations of Coulomb’s law are:  1 
R 2 +  ωL - 
(i) It holds good for point charges at rest.  ω C 1 

(ii) It is medium dependent law.
where, C1 is the total capacitance.

26. (i) Magnetic moment associated with a current (I )
2
carrying circular coil of radius r having N turns, 2  1 
⇒ R +  ωL -  =R2
can be given as,  ω C 1 

M = NIA
1 1
⇒ M= NI pr 2 ⇒ ω=L ⇒ 100
=
ωC 1 1000 C 1
(ii) According to Biot-Savart’s law
1
= 10-5 F
Y
C=
1 = 10 mF
5

10
dl
r dBy Additional capacitance C ′ required in parallel
R
dB = C1 - C = 10 µF - 2 µF = 8 µF
θ
I X 28. (i) Consider the given figure,
O x dBx R = 400 Ω
Z dl V = V0sin(1000t + φ) C = 2µF

→ →
→ m Id l × r
dB = 0 L = 100 mH
4p r 3 Since, the alternating emf in the above LCR series

µ0Idl circuit would be represented by
dB = V = V0 sin (1000t + φ) ⇒ ω = 1000 Hz
4 πr 2 Given, R = 400 Ω, C = 2µF, L = 100 mH

1 Here, φ is magnetic flux linked with the coil and

∵ Capacity reactance, XC = I is the current flowing through it. SI unit of self
ωC
inductance is henry (H).
1 103 (ii) Mutual inductance between two co-axial long
⇒ XC = ⇒ XC =
1000 × 2 × 10 -6 2 solenoids of same length wound over the other:

Magnetic field at the centre of solenoid S2
X C 500 Ω
⇒=
m0N 2 I 2
B2 =
m0n2 I 2 =
∵ Inductive reactance, XL = ωL L
⇒ XL = 1000 × 100 × 10– 3 ⇒ XL = 100 W Magnetic flux linked with each turn of inner
solenoid S
So, we can see that XC > XL
S2
⇒ tan φ is negative.
Hence, the voltage lags behind the current by
a phase angle φ. The AC circuit is capacitance N2 r2
dominated circuit. r1
X - XC N1
Phase difference, tan φ = L
R S1
100 - 500 - 400 L
tan φ = ⇒ tan φ =
400 400  m0N 2 I 2  m0N 2I 2 A1
=φ1 B2= A1  =A
⇒ tan φ = - 1  L  1 L
 
p p Hence mutual inductance,
⇒ tan φ = - tan  4  ⇒ φ = - N 1 φ1 N 1  m0N 2 I 2A1  m0N 1 N 2 A1
  4 =M12 =  = 
I2 I 2  L 
 L
This is the required value of the phase difference
between the current and the voltage in the m0(n1l )(n2l )r12
given series LCR circuit. ⇒ M12 = = m0n1 n2 r12l
L
(ii) Suppose, new capacitance of the circuit is C ′. 2
Thus, to have power factor unit Similarly, M21 = m0n1 n2r1 L
R M = M21 = M = m0n1 n2r12L
cos φ′ = 1 = ⇒ 12
R 2 + (X L - X C′ )2 If a medium of relative permeability µr is filled in

between the solenoids then
1
⇒ R 2 =R 2 + (X L - X C′ )2 ⇒ X=
L
X=
C′ M = µ0µr n1 n2r12L
ωC ′
1 29. (i) The collision of a photon can cause emission of
or ωL = a photoelectron (above the threshold frequency).
ωC ′
As intensity increases, number of photons
1 1 increases. Hence, the current increases.
⇒ ω2 = or (1000)2 = (∵ ω = 1000)
LC ′ LC ′
eV0 = h(n – n0)
(ii) We have,
1 1 h  -hn0 
⇒ C′ =
= V0 = (n ) +  
L × 106
100 × 10- 3 × 106 \  e 
e  
10 1 Hence, graph of V0 with n is a straight line and
= = 6
= 5
10- 5
10 10 slope (= h/e) is a constant.
-5 -6
⇒ C′ =
10 F =
10 × 10 F =
10 mF (iii) Maximum kinetic energy for different surfaces,
KE = h(n - n0)
As, C ’ > C
Hence, we have to add an additional capacitor Hence, it depends on the frequency and not on the
of capacitance 8µF (10µF - 2 µF) in parallel with intensity of the incident radiation.
previous capacitor. Or
Or Einstein Photoelectric Equation
(i) Self Inductance: Self inductance of a coil is
On the basis of planck’s quantum theory, Einstein
numerically equal to the emf induced in that coil
when the current in it changes at a unit rate. derived an equation for the photoelectric effect. This
Alternatively, the self inductance of a coil equals equation is known as Einstein photoelectric equation.
the flux linked with it when a unit current flows Einstein’s photoelectric equation
through it. hv = f0 + Kmax
Self inductance L can be expressed as follows:
where hv = energy of photon and f = work function
φ = LI
From Einstein photoelectric equation
m 2 +q
KEmax = hv − φ ⇒ v = hv − φ +qE
2 max
2h 2φ
2a
2
⇒ vmax
= v− ...(i) E
m m p 2a sin
As we know that, the equation of straight line –qE

y = mx + c ...(ii) –q
X
where, m is the slope of the line.
By comparing Eq. (i) with Eq. (ii), we get Force: Force on +q, F1 =
qE
2h −2φ Force on -q, F2 = - qE
m= and c =
m m
Hence net force on the dipole, F = qE - qE = 0
2h m tan θ

⇒ tan θ = ⇒ h= Torque: Two equal and opposite forces -qE and
m 2
+qE forms a couple which tries to rotate the
−2φ dipole. Torque due to this couple,
and l (from graph) l = c =
m
t = either force × ⊥ distance

φ
n= =0 [from Eq. (i)]
hv qE × 2a sin q =
= qE × 2a sin q
max
→ →
⇒ t= pE sin q= p × E [ 2aq = p]
30. If mm is the mass of muon, then from Bohr’s theory
2 (ii) If the electric field is non-uniform, the net force
1 e 2 mµv nh
= and mµv = on the dipole will not be zero hence, there will
4 πε0 r 2 r 2π
be the translatory motion of the dipole.
Eliminating v from above relations, we get (iii) (a) Net force will be in the direction of increasing
2 2
ε0h n electric field.
r=
(b) Net force will be in the direction opposite to
πmµe 2
the increasing field.
As mµ = 207 me , where me is mass of electron. Or
2 2
ε0h n (i)
Relative permittivity of a medium is defined
r= as the ratio of electrostatic force between two
207 πmee 2
points charges separated by a certain distance
For ground state (n = 1) for muon, we have in air to the electrostatic force between the
ε0h 2 same two point charges separated by the same
rµ = distance in a medium.
207 πme ⋅ e 2
(ii) Electric field between the plates in air
ε0h 2 Q
But = ground state radius of H-atom E0 =
πmee 2 ε0 A

-10
= 0.53 × 10 m
0.53 × 10−10
\ rµ = = 2.56 × 10−13 m.
207
me 4 1
Also, energy, E = − ⋅
n
8 ε02h 2 n 2
Obviously En ∝ m
Eµ mµ mµ
= or Eµ = × Ee Electric field in dielectric slab,
Ee me me
σ E Q
Ground state energy of an electron in H-atom, E =E 0 - E P =E 0 - P = 0 =
ε0 K ε0 KA
Ee = -13.6 eV
⇒ Potential difference between the plates

207 me
\ Eµ = × ( −13.6 eV ) E0  t Q  t
me V
= E0(d -t ) + =t E0 (d -t ) + = (d -t ) + 
K  K ε A
 0  K 
= - 2.8 × 103 eV = -2.8 keV.
→ Q Q ε0 A
31. (i) Let an electric dipole of dipole moment p is placed ⇒ C= =
V Q  t  ⇒ C= t
→ (d -t ) +  (d - t ) +
ε0 A  K K
in a uniform electric field E as shown in figure.
32. Consider the given figure,  ml 
or V = I ...(4)
 ne 2t 
I 3Ω E I
F D

1V But according to Ohm’s law,
R1 V = IR ...(5)
R
2Ω From eqs. (4) and (5), we get
3V I
I  m  l
R = ...(6)
 ne 2t  A
A C
B I
6V 4V
Applying Kirchhoff's second law in mesh AFEBA, l
R= ρ (7)
2 I - 1 + 3 I- 6 = 0 Also, A
(since, no current flows in the arm BE of the circuit) From eqs. (6) and (7), we get
5 I = 7
m
7 =ρresistivity of conductor.
=
⇒ I= A ...(1) ne 2t
5
As reciprocal of resistivity of conductor is known
Applying Kirchhoff's second law in mesh AFDCA,
as conductivity.
3I + RI - 4 - 6 + 2I - 1 = 0
2
5I + RI = 11...(2) ∴ Conductivity, σ= 1= ne t

Now, substitute the value of I from eq. (1) to eq. (2), ρ m
we get
I
7 7 7R Now, we know that, current density, J =
5× + R × = 11 ⇒ 7 + = 11 A
5 5 5
neAvd  ne 2t   eE t 
7R 20 or =J = nev
=  E =
∵ vd
⇒ =4⇒R = Ω A d  m  m 
5 7
For potential difference across A and D, along AFD,  ne 2t 
∴ J = σE ∵ σ = 
7 7 14 21  m 
VA − × 2 + 1 − 3 × = VD ⇒ VA − + 1 − = VD  
5 5 5 5

33. (i) The conditions for total internal reflection are:
14 21
⇒ VA − VD = + − 1 ⇒ (VA − VD ) = 7 − 1 = 6V (a) light must be trying to travel from optically
5 5
denser medium to optically light medium.
Or
(b) the angle of incidence must be greater than a
(i) Conductivity: The reciprocal of resistivity of a
certain angle known as critical angle.
conductor is known as conductivity. It is expressed
Derivation: Suppose light is travelling from
as
medium 1 to medium 2. When light strikes the
1 surface separating the media, some of it refracts
σ=
ρ and some of it reflects. If we keep increasing the
The SI unit of conductivity is mho per metre angle of incidence, the refracted ray becomes

(Ω -1m-1 ). parallel to the surface. This value of angle of
incidence is known as the critical angle. If we
(ii) We know that, drift velocity is given by
increase the angle of incidence, even further, we
eE t will have a reflected ray and no refracted ray.
vd = ...(1)
m Thus, we will have total internal reflection.
Where, e = electric charge,
E = applied electric field t = relaxation time and Rarer
B
m = mass of election. medium
V (Air)
Water-air
But E=
(i.e. potential gradient) O1 r O2 r´
l O3 D O4 interface
I´ N IC i > IC
 e t V  I N
∴ vd =     ...(2)
Totally
m l  N reflected ray
Denser Partially
From the relation between current and drift medium reflected rays
(Water)
velocity, A C

I = neAvd ...(3) Total Internal Reflection
(where, n = number of density of electrons) Let us consider the condition when the angle of
Putting the value of eq. (2) in eq. (3), we get incidence is equal to critical angle, iC .
 2 
 e tV  or I = ne At V sin IC n2
I = neA    By Snell’s law, =
 ml   ml 
sin 90° n1
where, n1 and n2 are the refractive indices of (ii) Image formed by the first lens
medium 1 and medium 2 respectively. Let n12 be 1 1 1
the refractive index of medium 1 with respect to − =
v 1 u1 f1
medium 2. Then,
1 1 1 1
sinIC = − =
n12 v 1 − 30 10

 1  or v1 = 15 cm
IC = sin-1   The image formed by the first lens serves as
 n12 
the object for the second. This is at a distance of
Thus, we have obtained the required relation. (15 - 5) cm = 10 cm to the right of the second lens.
(ii) Let us consider the lenses one by one. Though the image is real, it serves as a virtual
object for the second lens, which means that the
The first lens forms an image of the given object.
rays appear to come from it for the second lens.
Here, object distance, u = - 30 cm
Focal length, f = + 10 cm 1 1 1
− =
v 2 10 −10
Using the lens formula,
3 / 2 1 (3 / 2) − 1 or v2 = ∞
− = The virtual image is formed at an infinite distance
v ∞ 10
to the left of the second lens. This acts as an object
3 / 2 1 (3 / 2) − 1 for the third lens.
or − =
v ∞ 10
1 1 1
− =
v = 15 cm v 3 u3 f3

+10 cm –10 cm +30 cm 1 1 1
or = +
O v 3 ∞ 30
or v3 = 30 cm
I1 The final image is formed 30 cm to the right of the
third lens.
30 cm 5 cm 10 cm 34. (i) Given I1 = 10 W/m2 and I2 = 25 W/m2
The image I1 formed by the first lens acts as an
I1 a12 10 a 3.16
object for the second lens. = = ⇒ 1 =
I2 a22 25 a2 5
Here, object distance, u = + 10 cm
Focal length, f = - 10 cm 3.16
= or a1 = a 0.6324 a2
Using lens formula, 5 2

1 1 1 1 1 1
= - or = - Imax (a1 + a2 )2 [0.6324 a2 + a2 ]2
f v u -10 v 10 = = = 19.724
Imin (a1 − a2 )2 [0.6324 a2 − a2 ]2
v= ∞
Let us now consider the third lens. It is a converging λD
lens as it has a positive focal point. An object at (ii) Since, β =
d
infinity would have its image at the focal point For d = 2d
(either of the focal points as the object is in either λD'
direction). β' = =β (given)
2d
Hence, the final image is formed at 30 cm from the
third lens at either side. λD ′ λD
\ =
2d d
Or Hence D’ = 2D
(i) u = - 100 cm, v = ?, R = + 20 cm, n1 = 1, and (iii) The condition for possible interference maxima
n2 = 1.5. on the screen is, d sinq = nl
We know that, where d is slit separation and l is the wavelength.
n2 n1 n2 − n1 As d = 2l (given) \ 2l sin q = nl or 2 sin q = n
− = For number of interference maxima to be
v u R
maximum,
1.5 1 0.5

\ + = sin q = 1 \ n=2
v 100 20 The interference maxima will be formed when
or v = +100 cm n = 0, ± 1, ± 2
The image is formed at a distance of 100 cm from Hence the maximum number of possible maxima
the glass surface, in the direction of incident light. is 5.
Or VR 4.3
 Rmax = =
π Imin 1 × 10−3
Given, y1 = a sin  ωt +  and y2 = a sin ωt
 3 
Resultant amplitude, = 4.3 × 103 W = 4.3 kW
(ii) Given, I = 6 mA = 6 × 10-3 A;
π
A = a12 + a22 + 2a1a2 cos φ, where φ = VR = VB - VN = 5 - 0.7 = 4.3 V
3
VR 4.3
and a1 = a2 = a R= = = 717 Ω
I 6 × 10−3
π
= a 2 + a 2 + 2aa cos = 3 a (iii) Total potential, Vt = Vbi + VR = 0.63 + 6 = 6.63 V
3
Or
35. (i) Voltage drop across R, Given, VB = 6V; VN = 0.7V, VR = 6 - 0.7 = 5.3V
VR = VB - VN = 5 - 0.7 = 4.3 V Power dissipated, P = I × VR = (6 × 10-3) × 5.3
Given, Imin = 1 × 10 A
-3
= 31.8 × 10-3 W = 31.8 mW
Maximum value of resistance, 
Sample Paper-6
1. (d) is the same for all the figures From the figure,
As per Gauss’s theorem in electrostatics, the electric I R
flux through a surface depends only on the amount of A G B
charge enclosed by the surface. It does not depend on
size and shape of the surface. Therefore, electric flux V
through the surface is the same for all figures.
V
2. (a) 20 cm V = Ig (RG + R) ⇒ R = − RG
Ig
1 q1q2
Potential energy of system, U = Substituting the given values, we get,
4 πε0 r
2.5V
9 × 109 × 5 × 10−9 × ( −2) × 10−9 R= − 10 Ω = 2500 Ω - 10 Ω = 2490 Ω
⇒ - 0.5×10-6 = 1 × 10−3 A

(x − 2) × 10−2 6. (a) equal for both
⇒ x = 20 cm Since a bar magnet and a corresponding solenoid
3. (d) 8 : 4 : 27 produce similar magnetic fields. Hence the magnetic
moment of a bar magnet is equal to the magnetic
Current through 2W, resistor I = 2I moment of an equivalent solenoid that produces the
1 3 same magnetic field.
Heat produced per second, 7. (a) The equivalent emf εeq of the two cells is between
2
 2I  8I 2 ε1, and ε2 i.e., ε1 < εeq < ε2.
H 1 = I 12 ×2=   ×2=
 3 9 8. (d) X-rays
X-rays cover wavelengths ranging from about 10-8 m
I (100 Å) to 10–13 m (10–3 Å).
Current through 4W, resistor I 2 =
3 9. (b) l decreases and A increases.
Heat produced per second 10. (d) odd multiple of λ/2
2
I 4I 2 11. (a) decrease with increase of work function because
H 2 = I 22 × 4 =   × 4
 3 9 KEmax = hv − φ0 .

Current through 3W, resistor = I 12. (c) a-scattering experiment
Heat produced H3 = I 2 × 3
13. (d) (21 H, 31 H), (32 He, 31 H) and (197 198
79 Au, 80 Hg )
27I 2 2
= 3I = Nuclides with same atomic number Z but different
9
mass number A are known as isotopes.
∴ H1 : H2 : H3 = 8 : 4 : 27 Nuclides with same mass number A but different
2
4. (b) 2B0L Wb atomic number Z are known as isobars.
→ ∧ ∧
Here, B = B0( i + k ) T Nuclides with same neutron number N = (A - Z) but
different atomic number Z are known as isotopes.
2
1H
and 31 H are isotopes.
3
2 He
and 3 H are isobars.
1
197 198
79 Au and 80
Hg are isotopes.
14. (c) V, I
V
Vm I
∧
Im
Area vector of ABCD = L2 k t
0 2
∧
Area vector DEFA = L2 i
→ ∧ ∧
Total area vector, A = L2 ( i + k ) In the pure resistive circuit current and voltage both

→ →
are in phase. Hence, graph (c) is correct.
Total magnetic flux, φ = B . A 15. (a) zero

The potential at the centre due to pair of dipole cancel
∧ ∧ ∧ ∧
each other and hence net potential is zero.
= B0( i + k ).L2 ( i + k ) = B0L2 (1 + 1) = 2B0L2 Wb
16. (c) The energy gap for germanium is less
5. (c) 2490 Ω (0.72 eV) than the energy gap of silicon (1.1 eV) and
Here, Ig = 1 mA = 1 × 10-3 A, RG = 10 Ω silicon is preferred over germanium for making
V = 2.5V semiconductor devices.
17. (c) As the waves diffracted from the edges of 22. Given, m 1 =1.4 , m 2 = 1.5 , P = - 5D
circular obstacle, placed in the path of light interfere
constructively at the centre of the shadow resulting in Using lens maker’s formula
the formation of a bright spot. 1  m -m   1 1 
P= =  2 1   - 
18. (d) At normal pressure positive ions and electrons f  m 1   R1 R2 

liberated by ionisation of gas atoms, due to cosmic rays
 1.5 - 1.4   1 1 
are very small in number and they collide constantly = -5  - -
with the gas atoms which are present in large numbers,  1.4   R R 

and hence are unable to move a long distance under the [∵ for equi-concave lens, R1 = - R and R2 = R ]
electric field and soon get recombined i.e., flow of ions in
the gas does not take place. 0.1  2
5
-=  - R 
1.4
19. Microwaves are produced by oscillating current in
vacuum tubes like klystrons, magnetrons, etc. 1 2 1
R= × = = 0.0286m = 2.86cm
Uses of Microwaves: 14 5 35
19
(i) In RADAR communication. 23. (i) When 10 donor atoms of phosphorous are added
(ii) In analysis of molecular and atomic structure or per m3
in microwave oven for cooking food. ne - nh = Nd - Na = 1019
20. As ne >> nh therefore ne ≈1019
1 1
Hence, ρ = =
ene µe 1.6 × 10−19 × 1019 × 0.12
= 5.2 W-m
19
(ii) When 2 × 10 acceptor atoms of boron are further

Justification: added:
Direction of force experienced by the particle will be nh - ne = Na - Nd = 2× 1019 - 1019 = 1019
according to the Fleming’s left hand rule. As nh >> ne, therefore nh 1019
21. Centripetal force = electrostatic attraction between 1
Hence, ρ =
nucleus and electron (e-) enh µh
mvn2 1 Ze × e e–
1
Þ = rn = = 13.9 W-m
rn 4 pε0 r 2 1.6 × 10−19 × 1019 × 0.045
n
Ze 2 q Ze Or
⇒ mvn2 rn = ...(1)
4 pε0 As D2 is reverse biased, it does not conduct. So, there
is no current in branch DC.
By Bohr’s second postulate, angular momentum Total resistance of circuit = 2 + 1 = 3W
of e ,
-
V 6
nh Current in circuit, I = = = 2A.
mvnrn = ...(2) R 3
2p
So, current through 1W resistor = 2A
Dividing eqs. (1) by (2), we get
24. If two waves of intensities I1 and I2 having phase
mvn2 rn Ze 2 2p difference f travelling in the same direction superpose
= × upon each other, then resultant intensity after
mvn rn 4 pε0 nh
superposition is given by
Ze 2 I = I 1 + I 2 + 2 I 1I 2 cos φ
Hence, speed of electron, vn = .
2ε0nh
If I1 = I2 = I0, then
Or φ
Lyman series, n = 2, 3, 4, ...... to n = 1 I = 2 I0 (1 + cos φ) = 4 I0 cos2
2
For short wavelength, n = ∞ to n = 1
12375 12375 When path difference is l, the phase difference is
Energy,
= E = = eV 13.54eV
l (Å) 913.4 2p, then
Also, energy of nth orbit, E = 13.54/n
2 I = 4 I0 cos2 p = 4 I0 = K (given) ....(1)
so energy of n = 1, energy level = 13.54 eV λ

When path difference, ∆x = , the phase difference
3
13.54 13.54 is given by
=
Energy of n = 2, energy level = = 3.387 eV
22 4 2π 2π λ 2π
φ' = ∆x = × =
λ λ 3 3
12375
So, short wavelength of Balmer series = Å
3.387 \ I' = 4I cos2 π (since K = 4 I0)
0
3
= 3653Å
2
π 1 K
= K cos2 =K ×  = .
3 2
  4
25. Gauss’s law states that the total electric flux linked ∴ From eq. (1), vo =- 5 × (1.5) =7.5 cm
1
through a closed surface is equal to times the Again, for eyepiece; ve =-D =-25 cm
ε0
net charge enclosed by the surface. Mathematically, fe = 5 cm, ue = ?

q
φ = enclosed 1 1 1
ε0 Using lens formula, - =
ve ue fe
Proof: Consider a small area element dS around a
1 1 1
point ‘O’ on the surface. ⇒ - =
-25 ue f
Flux through area dS, B
→
→ → dS ⇒ 25
d φ = E . dS = E.dS ue = cm
E 6
q θ Thus, object should be placed at 1.5 cm from the
1 q
= dS A objective.

4 πε0 r 2 O
Separation between the two lenses,
Total flux = φE =  L v o + | ue |
=
∫ E ⋅ dS
25
= E ∫ dS =7.5 + =11.67 cm
6

q q
= ∫ dS = EA = × 4 πr 2 27. Given, I = 20 cm = 0.2 m,
4 pε0 r2 4 πε0r 2
B = 0.1 T, v = 10 cms-1 = 0.1 ms-1
q (i) Magnetic flux through loop fB = B.A = Blx
φE =
ε0 fmax = 0.1 × 0.2 × 0.2 = 0.004 Wb = 4 × 10-3 Wb

26. (a) Ray diagram of compound microscope, when final
image is formed at least distance of distinct vision,
shown below.
Objective
Eyepiece
B A''
Q
A Fa C Fo Fe A' C'
−d φ
B'
ue (ii) Induced emf, ε = = −Blv
uo fo dt
(b) Given angular
B'' magnification, m = 30 |ε|max = 0.1 × 0.2 × 0.1 = 0.002 V = 2 × 10-3 V
vo
Focal length of objective, fafe= 1.25 cm ×  ×  ×  ×  ×
D     
×  ×  ×  ×  ×
Focal length of eyepiece, fe = 5 cm
    
When image is formed at least distance of distinct × − ε  ×  ε − ×
vision, then D = 25 cm.     
×  ×  ×  ×  ×
∴ Angular magnification of eyepiece, 
× 

×

 ×

 ×  ×

 D 25
me = 1 +  = 1+ 6
= 2 × 103
 f  5
 e
ε(V)
∴ Total angular magnification, −2 × 10−3
m ma ⋅ me
= t(s)
m 30
⇒ m
=a= =5
me 6 (iii) Induced current,
As the objective lens forms the real image, | ε | 2 × 10−3
v I= = = 2 × 10−2 A
Hence, mo = o = - 5 R 0. 1
uo
v o = - 5 uo
⇒ …(1)
Now, using lens formula for objective
1 1 1
- =
vo uo fo
1 1 1 28. Let q0 be the initial charge on a capacitor. Let the
⇒ - - = charged capacitor be connected to an inductor of
5uo uo 1.25
inductance L. This LC circuit will sustain an oscillation
⇒ uo = - 1.5 cm with frequency
 V
1 
ω  = 2πv = 
 LC 

Stopping
potential
At an instant t, charge q on the capacitor and the B
current i are given by: A
q(t) = q0 cos wt
B A
I(t) = - q0 w sin wt Frequency
Energy stored in the capacitor at time t is h
2 As, V = (ν − ν0 )
1 1 q 2 q0 e
UE = C V 2 = = cos2 (ωt )
2 2 C 2C ∴ V is higher for lower value of n0. Here nB < nA,
Energy stored in the inductor at time t is so VB > VA.
(ii) Slope of the graph is given by h/e which is
1 2 1
UM = LI = L q02 ω2 sin2 (ωt ) constant for all the materials. Hence, slope of
2 2
the graph does not depend on the nature of the
q02 material used.
= sin2 (ωt ) ( ω = 1 / LC )
2C Or

Sum of energies (i) For the cut-off or threshold frequency, the energy
hn0 of the incident radiation must be equal to
q02
UE + UM = (cos2 ωt + sin2 ωt ) work function f0, so that
2C
φ0 2.14 eV
q02 n0 = =
= h 6.63 × 10−34 J s
2C
2.14 × 1.6 × 10−19 J
This sum is constant in time as q0 and C, both are = = 5.16 × 14 Hz
time-independent. Note that it is equal to the initial 6.63 × 10−34 J s
energy of the capacitor. Thus, for frequencies less than this threshold
frequency, no photoelectrons are ejected.
Or
(ii) Photocurrent reduces to zero, when maximum
(i) To find the impedance of the circuit, we first
kinetic energy of the emitted photoelectrons
calculate XL and XC.
XL = 2 pvL equals the potential energy eV0 by the retarding
= 2 × 3.14 × 50 × 25.48 × 10-3 W = 8 W potential V0. Einstein’s Photoelectric equation is
1 hc
Xc = eV0 = hn - f0 = − φ0
2π vC λ

1 or l = hc/(eV0 + f0)
= = 4Ω (6.63 × 10−34 Js) × (3 × 108 m/s)
2 × 3.14 × 50 × 796 × 10−6 =
(0.60 eV + 2.14 ev)
Therefore,
Z = R 2 + (X L − X c )2 = 32 + (8 − 4 )2 19.89 × 10−26 J m
=
(2.74 eV)

= 5 W
XC − X L 19.89 × 10−26 J m
l = = 454 nm
(ii) Phase difference, f = tan−1 2.74 × 1.6 × 10−19 J
R
 4 − 8 30. Lyman series, n = 2, 3, 4, ...... to n = 1
= tan−1  = − 53.1°
 3  For short wavelength, n = ∞ to n = 1

Since f is negative, the current in the circuit lags 12375 12375
Energy,
= E = = eV 13.54eV
the voltage across the source. l (Å) 913.4
(iii) The power dissipated in the circuit is
P = I 2 R 2
Also, energy of nth orbit, E = 13.54/n
i 1  283 
Now, I = m =   = 40 A
2 2 5  So energy of n = 1, energy level = 13.54 eV
2
Therefore, P = (40 A) × 3 W = 4800 W
13.54 13.54
=
Energy of n = 2, energy level = = 3.387 eV
29. We know, Kmax = eV = h(n – n0) 22 4
h h
or V = n - n0 12375
e e So, short wavelength of Balmer series = Å
3.387
(i) From the graph for the same value of n, stopping
= 3653Å
potential is more for material B.
31. As, charge on capacitor increases, we have to work Or
more against electrostatic repulsion and this amount (i) As we know that, force exerted between two point
of work done will be stored as potential energy in the charges in air,
capacitor.
q1q2
(i) We know that, q = CV ⇒ V = q/C F=
q 4πε0r 2
dW = Vdq = dq
C So, force exerted between two point charges in a
where, q = instantaneous charge, medium of dielectric constant K,
C = instantaneous capacitance and q1q2
V = instantaneous voltage F ′ =
4πε0K (r ′ )2
\ Total work done in storing charge from 0 to q is
given by where, r ′ = distance.
q
q
q2 According to the question,
W = ∫ dq = F = F ′
C 2C
0
q1q2 q1q2
(ii) In series combination of capacitors, same charge
⇒ =
2
lie on each capacitor for any value of capacitances. 4 πε0r 4 πε0K (r ′ )2
+Q −Q +Q −Q +Q −Q
+− +− +− 1 1
+− +− +− =
+− +− +− r2 K (r ′ )2
+− +− +−
C1 C2 C3 r2 = K(r′)2
V1 V2 V3 r = K r′

r
V
\ r ′ =
(+) (−) K
(ii) The length of diagonal of the cube of each side x is
Capacitors in series combination

Also, potential difference across the combination is
equal to the algebraic sum of potential differences 3x 2 = x 3
across each capacitor.
\ Distance between centre of cube and each vertex,
i.e., V = V1 + V2 + V3…(i)
x 3
where, V1, V2, V3 and V are the potential differences
r=
across C1, C2, C3 and equivalent capacitor, respectively. 2
q 1 q
Now, potential, V =
\ q = C1V1 ⇒ V1 = C
4 πε0 r
1
Since, cube has 8 vertices and 8 charges each of
q q value q are present there
Similarly, V2 = ⇒ V3 =
C2 C3 1 8q 4q
\ V =
=

\ Total potential difference [from Eq. (i)] 4 πε0 x 3 3 πε0x
2
q q q
V= + + 32. (i) Kirchhoff’s first rule or junction rule: The algebraic
C1 C2 C3
sum of electric currents at any junction of electric
circuit is equal to zero, i.e. the sum of current entering
V 1 1 1
= + + into a junction is equal to the sum of current leaving
q C1 C2 C3 the junction

1 1 1 1
⇒ = + +
C C1 C2 C3
V 1
[ = where C is equivalent
q C′ ⇒ SI = 0
At junction O, I1 + I2 = I3 + I4
capacitance of combination]
Kirchhoff’s second rule or loop rule: In any closed mesh
1 C2 C3 + C3 C1 + C1 C2 of electrical circuit, the algebraic sum of emfs of cells
or = and the product of currents and resistances is always
C C1 C2 C3
equal to zero.
C1 C2 C3 i.e. SE + SIR = 0

⇒ C =

C1 C2 + C2 C3 + C3 C1 Kirchhoff’s second law is a form of law of conservation
of energy.
For given circuit, V
But E= (i.e. potential gradient)
l
 e t V 
∴ vd =     ...(2)
m l 

From the relation between current and drift velocity,
I = neAvd ...(3)

(where, n = number of density of electrons)
Putting the value of eq. (2) in eq. (3), we get
At F, applying junction rule,  ne 2At 
I 3 = I 1 + I 2 ...(i)  e tV  or
I = neA  I= V
In mesh ABCFA,  ml   ml 

-2 - 4I 1 + 3I 2 + 1 = 0
 ml 
4I 1 - 3I 2 = -1...(ii) V = I ...(4)
In mesh FCDEF, or  ne 2A t 
 
-1 - 3 I2 - 2 I3 + 4 = 0
But according to Ohm’s law,
3 I2 + 2 I3 = 3 ...(iii)
V = IR ...(5)
On solving, I 1, I 2 and I 3 we get
From eqs. (4) and (5), we get
2 7
I1 = A, I = A  m l
13 2 13 R =  ...(6)
 ne 2t  A
9
and I 3 = A l
13 R= ρ (7)
Also, A
(ii) (a) The circuit diagram can be redrawn as given below.
m
= ρ = resistivity of conductor.
ne 2t
As reciprocal of resistivity of conductor is known as
conductivity.
1 ne 2t
∴ Conductivity, σ= =
ρ m
I
Now, we know that, current density, J =
r r A
RAC = ;R =
2 CB 2 neAvd  ne 2t   eE t 
or =J = nev
=  E =
∵ vd
1 1 1 1 3 A d  m  m 

⇒ = + + =
RAB r r r r
 ne 2t 
r J = σE ∵ σ = 
⇒ RAB
= ∴  m 
3  
r 4r 33. (i) Interference of Light Waves : When two light
Total resistance of circuit, r = r + =
3 3 waves of same frequency travel simultaneously in
Current drawn from cell, the same direction then, due to their superposition,
E 3E the resultant intensity of light
I= =
4r / 3 4r L M N
B
2
 3E  9E 2 2

2
(b) Power consumed = I r =   r = . r = 9E
4
 r 16r 2
16r D
Or S1
(i) Conductivity: The reciprocal of resistivity of a
conductor is known as conductivity. It is expressed as S B
1
σ= S2
ρ D
-1 -1
The SI unit of conductivity is mho per metre (Ω m ).
(ii) We know that, drift velocity is given by B
eE t at any point in space is different from the
vd = ...(1)
m sum of intensities of the two waves. At some
Where, e = electric charge, points the resultant intensity is maximum while
E = applied electric field, t = relaxation time and at some other points it is minimum (nearly
m = mass of election. darkness). The re-distribution of light intensity
due to the superposition of two light waves is µ0 I
called ‘interference of light’. B=
2π r
The interference is said to be ‘constructive’
(ii) Let I ′ be the current in region r< R
at points where the resultant intensity is
I Ir 2
maximum and ‘destructive’ at points where the Then, I′ = π(r 2 ) or I ′ =
resultant intensity is minimum or zero. πR 2 R2
µ0Ir 2
T!p So, magnetic field, B =
µ0I ′
2πr
=
2
=
µ0Ir
2πR r 2πR 2
Phase difference for destructive interference is odd
[i.e., (2n + 1)p] and for constructive interference is (iii) Magnetic field due to a long straight wire of radius
even [i.e. 2np]. a carrying current I at a point distance r from the
centre of the wire is given as follows :
(ii) The distance of bright fringes from the central µ Ir
maximum on the screen is given by B= 0 for r < a
2πa 2
Dλ
, x =m m = 0, 1, 2, .... µ I
d B = 0 for r = a
Where m = 0 corresponds to the central maximum. 2πa

xd µ I
\ λ= .
mD B = 0 for r > a
2 πr
(10−3m) × (2 × 10−3m) The variation of magnetic field B with distance r
For m = 1, λ1 =
1 × (2.5 m) from the centre of wire is shown in the figure.
= 8 × 10-7 m Or
= 8000 Å (infrared). Let the magnetic fields due to a long straight
wire of radius R carrying a steady current I at a
8000 Å
For m = 2, λ2 = distance r from the centre of the wire are
2
= 4000 Å (visible). µ Ir
B1 = 0 (for r < R )
2πR 2
8000 Å
For m = 3, λ3 = µ I
3 and B2 = 0 (for r > R )
= 2666 Å (ultraviolet). πR 2
8000 Å R
For m = 4, λ4 = So, the magnetic field at r = is
4 2
= 2000 Å (ultraviolet)
µ0I  R  µ0I
Or B1 =  =
(i) The features to distinguish is given as: 2πR 2  2  4 πR
(a) In Young’s experiment, width of all the fringes µ0I µ0I
are equal but in diffraction fringes, width of and at r = 2R is B2 = =
2π(2R ) 4 πR
central fringe is twice the other fringes.
(b) The intensity of all the fringes are equal in ∴ Their corresponding ratio is
interference fringe but intensity of fringes go B1 (µ0I / 4 πR )
on decreasing in diffraction as we go away = = 1 ⇒ B1 : B2 = 1 : 1
B2 (µ0I / 4 πR )
from the central fringe.
(ii) Given, wavelength, 35. (i) Voltage drop across R,
λ = 500 nm = 500 × 10 m
-9
VR = VB - VN = 5 - 0.7 = 4.3 V
Width of single slit Given, Imin = 1 × 10-3 A
d = 0.2 mm = 0.2 × 10 m
-3 Maximum value of resistance,
λ VR 4.3
Angular width of central fringe = 2 × Rmax = =
d Imin 1 × 10−3
-9 -6

2 × 500 × 10 10 = 4.3 × 103 W = 4.3 kW
= =
-3
0.2 × 10 2 × 10- 4 (ii) Given, I = 6 mA = 6 × 10-3 A;
1 -
VR = VB - VN = 5 - 0.7 = 4.3 V
= = 5 × 10 3 radian
200 VR 4.3
Let distance between the slit and screen be 1 m. R= = = 717 Ω
I 6 × 10−3
Linear width of central fringe of single slit
(iii) Total potential, Vt = Vbi + VR = 0.63 + 6 = 6.63 V
5 × 10- 3 × 103 mm = 5 mm
=
Or
Number of double slit fringe accommodated in Given, VB = 6V; VN = 0.7V, VR = 6 - 0.7 = 5.3V
50 Power dissipated, P = I × VR = (6 × 10-3) × 5.3
= = 10 fringes.
central fringe
5 = 31.8 × 10-3 W = 31.8 mW
34. (i) Magnetic field due to a long current carrying wire 
at r
Sample Paper-7
→ 8. (d) 6.2×10-5 eV
1. (b) E on the LHS of the given equation will have a
-2
Given, λ = 2cm = 2×10 m
contribution from all charges while q on the RHS will
have a contribution from q2 and q4 only. hc
∴ E=
When the point is on the diameter and away from the λ
centre of hemisphere which is charged uniformly and
6.6 × 10−34 × 3 × 108
positively, the component of electric field intensity = = 9.9 × 10−24 J
parallel to the diameter cancel out. So, the electric 2 × 10−2
field is perpendicular to the diameter.
9.9 × 10−24
2. (d) -Kq / x = eV = 6.2×10-5 eV
−19
1.6 × 10
Electric potential at distance x due to charge -q is
given by, 9. (c) increasing the current through it
−q −Kq  1  10. (c) conservation of energy holds good and energy is
V= = ∵K = 
4 πε0x x  4 πε0  redistributed

11. (b) saturation current
3. (b)
12. (a) According to Bohr’s second postulate, angular
momentum,
V
nh
L=
2π
0
R For second orbit, i.e., n = 2

ε + – r 2×h h
Current in the circuit, I = \ L= =
R +r 2π π
I I
Potential difference across R, 13. (d) Proton
 ε  ε
V = IR =   R= 14. (b) λm > λv > λ x
R +r  r R
 1 + R 
qQ  a − b 
15. (a)
4 πε0  ab 
When R = 0, V = 0 or R = ∞, V = ε
4. (a) 6.28 × 10-5 V 1 q

Potential at point A is VA =
4 πε0 a
120
Here, v
= = 2 rps
60
1 q
Potential at point B is VB =
1 2 1 2
4 πε0 b
Induced emf =   ωBR = 2πvBR
2 2
Work done in taking a charge Q from A to B is

-4 2
= 3.14 × 2 × 0.4 × 10 × (0.5) Qq  1 1 
W = Q (VB − VA ) =  − 
-4
= 0.628 × 10 = 6.28 × 10 V -5
4 πε0  b a 
→ →
5. (a) B⊥ v
Qq  a − b 
Magnetic field produced by charges moving with =  
4 πε0  ab 
→ → ∧
→  µ  v× r
velocity v , at a distance r is B =  0  .q
 4π  2 16. (c) Due to diffusion of holes from the p-region to the
  r
→ → n-region and of electrons from the n-region to the p-region,
Therefore, B ⊥ v .
an electric field is set up across the junction barrier. Once
6. (c) ferromagnetism the depletion layer is formed it is in equilibrium and
7. (d) 1.2 becomes free of mobile charge carriers.
net emf

The current = 17. (a) For reflected system of the film, the maxima or
net resistance
(2n - 1)l
constructive interference is 2 mt cos r =
2+2+2 2
I=
1+1+1+2 while the maxima for transmitted system of film is
6 given by equation 2µt cos r = nl, where t is thickness
= = 1.2 A
5 of the film and r is angle of reflection.

From these two equations we can see that condition 1 Ze 2 KZe 2
for maxima in reflected system and transmitted =F =
4 pε0 r 2 r 2 ...(2)
system are just opposite.
18. (b) The specific charge (e/m) of the positive rays is not 1
where, K =
4 pε0
universal constant because these rays may consist
of ions of different elements. From eqs. (1) and (2), we get
19. (i) The wavelength is mv 2 KZe 2
=
c 3 × 108 ms−1 r r2
λ==
–2
= 1.5 × 10 m.
ν 2.0 × 1010 s−1
KZe 2
(ii) If E0 and B0 be the amplitudes of the oscillating ⇒ r= ....(3)
mv 2
electric and magnetic fields respectively, then we
have Also one of the Bohr’s postulates states that the
electron revolves in stationary orbits where the
E0
=c angular momentum of electron is an integral multiple
B0
h
of .
E0 48 Vm−1 2p
∴ B0 = =
c 3 × 108 ms−1 nh

∴ mvr =
2p
= 1.6 × 10-7 NA-1 m-1 Here, h is Planck’s constant and n is any positive
20. As B = m0(M + H) integer i.e. 1, 2, 3, ......
(B − µ0H ) nh
Magnetisation, M = ⇒
r=
µ0 2pvm ...(4)
µ0µr H − µ0H
then M = = (µr − 1)H KZe 2 nh
µ0 =

mv 2 2pmv
( B = m0mrH)
Here, mr = 500 2pKZe 2

⇒
v=
nh ...(5)
H = nl = 1000 × 2 = 200 Am
-1
and
Now, we know frequency (n) of electron in Bohr’s

\ M = (500 - 1)H = 499 × 2000 stationary orbit is given by
5 -1
or M = 9.98 × 10 Am v = rw = r(2pn)
21. (i) Symbol ‘b’ represents impact parameter and ‘θ’ v
n=
represents scattering angle. 2pr

Ze 2 cot q /2 From eq. (5), we get
(ii) Impact parameter, b =
1 
4 pε0  mv 2  v 2pKZe 2 KZe 2
2  =
n = =
2pr nh ⋅ 2pr nhr

(a) When q = 0°, b is maximum and represent the
For hydrogen atom Z = 1, therefore
atomic size.
(b) When q = p radians, b is minimum and Ke 2
n=
represent nuclear size. nhr
Or Above expression is the orbital frequency of electron
According to Bohr’s model, the centripetal force moving in the nth orbit of hydrogen atom.
required for the revolution of electrons around the
Now, we know the orbital period (T) of the electron
nucleus is provided by the electrostatic force of
attraction between the electron and the nucleus. 1 nhr
atom is T= = .
n Ke 2
If m is the mass of electron moving with a velocity moving in the nth orbit of hydrogen
v in a circular orbit of radius r, then the necessary
22. Optical fibre works on the principle of total internal
centripetal force is
reflection.
mv 2 …(1)
F= When a light ray, travelling from denser to a rarer
r
medium is incident at an angle greater then the critical
Also, the electrostatic force of attraction between the angle, then it is reflected back into the same medium.
-
nucleus of charge (+Ze) and electron of charge (e ) is This phenomenon is called total internal reflection.
number of hole in valence band. The donor energy level
lies just below the conduction band. In p-type extrinsic
semiconductor, the number of holes in valence band is
much more than number of free electrons in conduction
band. The acceptor energy level lies just above the
valence band.
Core
Ec
Electron energy
Light Cladding Eg
ray
Ev
Optical fibre

Optical fibres are fabricated in such a way that light
reflected at one side of the inner surface strikes the
Energy band diagram of
other at an angle larger than critical angle. Even, if
semiconductor at T = 0 K
fibre is bent, light can easily travel along the length.
Optical fibre is used in communication system. 24. Plot of intensity distribution of diffraction with proper
labelling.
23. Since, antimony is a pentavalent impurity, hence when
it is added to a pure semiconductor crystal of silicon
(Si), then n-type semiconductor is obtained.
Energy level diagram of n-type semiconductor is given
as
25. An electric dipole whose size is very small or negligible

is called an ideal dipole. The nature of symmetry of
electric field is cylindrical.
26. (i) Ampere’s circuital law As, Ampere’s circuital law
Or states that the line intergral of magnetic field B
around any closed loop is equal to m0 times the
total current threading through the loop.
ED
Electron energy
i.e., ∫ B ⋅d l = µ0I
ED
0.01 eV Eg
Ev
C
(a)
Energy band diagram of I
n-type semiconductor at
T>0K
Boundary Surface
E0
Electron energy
Derivation: To explain the Ampere’s circuital law

≈ 0.01-0.05eV consider an infinitely long conductor wire carrying
Eg EA a steady current I as shown in the figure.
(b)
Energy band diagram of
p-type semiconductor at
T>0K P × B (tangential to
R
circumference)
In n-type extrinsic semiconductors, the number of
free electrons in conduction band is much more than
In order to determine the mangetic field at point The coil has N = 100 turns. Hence, the flux through the
P which is situated at a distance R from the centre entire coil is
of the circular loop around the conductor wire, B
N f = 100 × (0.94 × 10 ) = 0.094 Wb
-3
(magnetic field) is tangential to circumference of
the loop. when B is reduced to zero, N F is also reduced to zero,
Now, ∫ B ⋅ d I = ∫ Bdl = B 2πR = µ0I
\ D (N f) = 0 - 0.094 = - 0.094 Wb
⇒ B = m0 I/ 2p R [From Ampere’s circuital law] By Faraday’s law, the emf induced in the coil is
The direction of magnetic field will be determined
by right hand rule. ∆(N φ) 0.094 Wb
ε=− = = 94 V
(ii) Figure shows the longitudinal sectional view ∆t 10−3 s

of long current carrying solenoid. The current
comes out of the plane of paper at points marked. The resistance of the coil is R = 10 W. Hence, the current
Q induced in the coil is
l
ε 94 V
d c I= = = 9. 4 A
R 10 Ω

The current persists only during the flux-change
(10-3 s). Hence, the charge passed through the coil is
q = I × Dt = 9.4 A × 10-3 s = 9.4 × 10-3 C.
28. The circuit diagram and the phasor diagram are shown
a b in figure.
Let B be the magnetic at any point inside the

solenoid.
Considering the rectangular closed path abcda. (i) Circuit current, Iv = VR/R = 150/75 = 2 A
Applying Ampere’s circuital law over loop abcda. Reactance of the coil, XL = 2pfL
= 2p × 50 × 318 × 10-3 = 100W
∫ B ⋅ d I = µ0 ×

(Total current passing through loop
Voltage across L, VL = Iv XL = 2 × 100 = 200 V
abcda.) Referring to the phasor diagram [Fig. 13.18 (ii)],
b c d a N  we have,
∫a B ⋅ d I + ∫b B ⋅ d I + ∫c B ⋅ d I + ∫ B ⋅ d I = µ0  lI 
d L  2 2 2 2
Supply voltage, Ev = VR + VL = (150) + (200)
N = 250 V
where, = number of turns per unit length and
L
Alternatively, Z = R 2 + X L2 = (75)2 + (100)2
ac = cd = l = length of rectangle.
b c = 125 W
∫a Bdl cos0° + ∫b Bdl cos 90° + 0 ∴ Ev = IvZ = 2 × 125 = 250 V
(ii) tan f = XL/R = 100/75 = 1.33
a N
+ ∫ Bdl cos90° = µ0   lI ∴ Phase angle, f = tan-1 1.33 = 53.06° lag
d L
Or
b N P = 120 kW = 120 × 103 W; R = 0.4 W
B ∫ dl = µ0   lI ⇒ Bl = µ N lI
 
a L 0 L  (i) When transmission voltage is 240V
 
P = Ev Iv
B = m0 (N/L)I or B = m0 nI
where, n = number of turns per unit length. This is P 120 × 103
∴ Line current, Iv =
= = 500 A
the required expression for magnetic field inside the Ev 240
long current carrying solenoid. Power loss in the line = Iv2 R = (500)2 × 0.4
27. f = BA cos q = 100 × 10 W = 100 kW
3
2 2 Note that over 80% of the power is wasted as

Given, A = 100 cm = 10 m and q = 90° - 70° = 20° so
-2

heat in the transmission lines.
that cos 20° = 0.94. Therefore,
(ii) When transmission voltage is 24,000 V

-2 -2 2
\ f = BA cosq = 0.1 Wb m × 10 × m × 0.94 P = Ev Iv
= 0.94 × 10-3 Wb. P 120 × 103
∴ Line current, Iv =
= =5A
Ev 24,000
Power loss in the line = Iv2 R = (5)2 × 0.4 = 10 W
Note that now the power loss in the transmission
Common
lines is less than 1%. Several students do not know the correct relations.
This example shows the advantage of transmitting
electric power at high voltage. 30. From Rutherford atom model
29. Graph of variation of photoelectric current with the
m ν2 1 Ze 2
intensity of incident radiation on a photosensitive = ⋅ 2
surface is given as alongside. r 4 πε r
0
y
1 Ze 2
⇒ mn2 = ⋅ …(1)
4 πε0 r
Photoelectric

current
e−
r
O x
Intensity of incident
radiation +Ze
-10
Given that, l = 3300 × 10 m,
fNa = 2.75 eV, fMo = 4.175 eV.
Then energy of the laser beam is
Potential energy between two charges
hc 6.6 × 10-34 × 3 × 108
E
= = = 3.75 eV 1 q1q2 1 ( + Ze )( −e )
l 3300 × 10-10 × 1.6 × 10-19 U = =
4 πε0 r 4 πε0 r
Since, E < fMo therefore there will be no emission of
photoelectrons for molybdenum (Mo). 1 Ze 2
=− …(2)
Bringing the source nearer will cause to emit 4 πε0 r

more photoelectrons as intensity on the plate will
Total energy of the electron,
increase.
E = PE + KE
Or
(i) The variables X on the horizontal axis is collector 1 Ze 2 1
=− ⋅ + m ν2 …(3)
plate potential. 4 πε0 r 2

(ii) The point A on the horizontal axis represents
stopping potential. From eqs. (1) and (3)
(iii) Graph for different frequencies:
1 Ze 2 1 1 Ze 2
E = − ⋅ + × ⋅
4 πε0 r 2 4 πε0 r
Photoelectric
current
1 1 Ze 2 1 Ze 2
=− × ⋅ =− ⋅
2 4 πε0 r 8πε0 r
1 > 2 > 3

Negative sign indicates that the electron remains
1 Saturation current bound with the nucleus (or electron-nucleus form an
2
3 attractive system).
A O B
–V01 –V02 –V03 O Collector plate 31. (i) −q +q p
potential V r
Retarding potential

Let P be an axial point at distance r from the
centre of the dipole. Electric potential at point P
(iv) Graph for three different intensities:
will be
Photoelectric
1 ( −q ) 1 q
I1 > I2 > I3
V = V1 + V2 = ⋅ + ⋅
current
I1 4 πε0 r + a 4 πε0 r − a
I2
q  1 1  q 2a
I3 =  − = ⋅
4 πε0  r − a r + a  4 πε0 r 2 − a 2

Stopping
1 p
potential =
⋅
4 πε0 r 2 − a 2 [ p = q (2a)]

–V0 O Collector plate For a far away point, r >> a
Retarding potential potential

1 p 1
2
For short dipole a << r
2

\V= ⋅ or V ∝
4 πε0 r 2 r2
1 p
Thus, due to a dipole potential at a point is ⇒
V=
4 pε0 r 2
V ∝ 1/r2.
(ii) Let A → area of each plate and C1 and C2 are 2Q 2Q + 4Q 6Q
(iii) (a) φ1 = and =
φ2 =
ε0 ε0
capacitance of each slab. ε0
ε0A φ1 2Q ε0
Let initially, C = C = = C2 ⇒ = × = 1/3
1 d
φ2 ε0 6Q
After inserting respective dielectric slabs.
4Q
C′1 = KC...(1)
ε0 ( A / 2 ) ε0 ( A / 2 )
and C 2′ = K 1 + K2
d d 2Q S2
ε0A
= (K 1 + K 2 ) ; S1
2d
C 2Q 2Q
C 2′ = (K + K 2 ) …(2) (b) =
φ1 =
2 1 ε0 K ε0εr
From Eqs. (i) and (ii), we get
C′1 = C′2 32. (i) According to the question, we can draw the
combination as given below:
C

⇒ KC = (K + K 2 ) E1
2 1
I1 I1
1 r1
⇒ K = (K + K 2 ) Eeq
2 1
I B1 B2 I C A I I C
Or A req
(i) The equipotential surfaces are plane parallel to I2 E2 I2
X – Y plane. As the field is increasing in magnitude,

r2
the spacing between surfaces decreases.
X Current drawn from cell-1,
E1 – V
Equipotential surfaces
I1 =
r1

Current drawn from cell-2,
Z E2 −V
E I2 =
r2

Y Resultant current, I = I1 + I2
(ii) Let us consider an electric dipole consisting of Putting values of I1 and I2, we get
charges +q and -q separated by a distance 2a. Let
E 1r2 + E 2r1 r +r 
O be the centre of dipole and P be a point on the I= –V  2 1 
r1r2  rr 
axis of the dipole.  12 
A O B
E r + E 2r1  r1 r2 
–q +q P or V= 12 –I  ...(1)
r1r2 r +r 
2a  2 1 
r Now, V = Eeq - Ireq ...(2)
Electric potential at point P due to the dipole will
On comparing eqs. (1) and (2), we get
be,
E 1r2 + E 2r1
1 ( -q ) 1 ( +q ) E eq =
V==
V1 +V2 + r1 + r2
4 pε0 AP 4 pε0 BP

r1r2
-q q and req =
= + r2 + r1
4 pε0 (r + a ) 4 pε0(r - a )
r1r2
2×2
(ii) req = = = 1Ω
q  1 1  q  2a 
r1 + r2 2 + 2
=  -  =  
4 pε0  (r - a ) (r + a )  4 pε0  r 2 - a 2 
  Current through external resistance, R
1 p E eq 5 5
= ⋅ [ p= q × 2a ] I= = = A
4 πε0 r 2 − a 2 R + req 10 + 1 11

5 the phase difference due to the path difference

Now, potential difference across R = × 10 = 4.54 V.
11 S2P - S1P. Young’s arrangement to produce
Or interference pattern is shown in figure.
ρl
(i) Resistance of a wire, R =
A
V 2 V 2A
Rate of energy dissipated as heat is H = =
R ρl
V 2A
For wire 1, H 1 =
ρL
V 2A 0.694V 2A
For wire 2, H 2 = = = 0.694
(1.2ρ)(1.2L ) ρL
H1
The electric field from the light at each of the
sources S1 and S2 can be written as,
V 2A 1.23V 2A
For wire 3, H 3 = = = 1.23 H1 E1 = E0 sin wt and E2 = E0 sin (wt + φ)
(0.9ρ)(0.9L ) ρL
where, each source of light has maximum
V 2A 0.666V 2A electric field strength E0.
For wire 4, H4 = = 0.666 H1
(ρ)(1.5L ) ρL
At P, by principle of superposition,
\ H3 > H1 > H2 > H4
Ep = E1 + E2 = E0 sin wt + E0 sin (wt + φ)
(ii) The given network represent a Wheatstone bridge
R R φ  φ
= = 2E0 cos sin  ωt + 
2R 2R 2  2 

The resistance 3R is ineffective.
As intensity is the square of the amplitude,

The equivalent circuit reduces to the circuit shown
φ
in the figure. I = 4E02 cos2  
R R 2
A B Note that, I0 = E02
φ
2R 2R Hence, I = 4I0 cos2  
2
-
(ii) Given, size of aperture, a = 3 mm = 3 × 10 3 m
E -9
(a) Equivalent Resistance, Wavelength of light, λ = 620 nm = 620 × 10 m
Distance from screen, D = 1.5 m
2R × 4R 8R 2 4R
Req = = = Size of one maxima/minima (except the central),
2R + 4R 6R 3
l
(b) As Wheatstone bridge is balanced, no current d= D
a
flows through 3R, i.e., current in 3R is zero.
33. (i) Difference between Interference and Diffraction: 620 × 10- 9 m - 4
=d × 1.5 m = 3.1 × 10 m
(a) Interference pattern has number of equally 3 × 10- 3 m

spaced bright and dark bands while diffraction
Now, the required separation has four fringes.
pattern has central bright maximum which is
Hence, the distance is
twice as wide as the other maxima. -
4d = 3.1 × 10-4 × 4 = 1.24 × 10 3m
(b) Interference is obtained by the superposition of
= 1.24 mm
two waves originating from two narrow slits.
The diffraction pattern is the superposition Common
of the continuous family of waves originating
Students often forget to convert quantities in S.I.
from each point on a single slit.
unit.
Common Or
Some students do not know the correct difference When plane wavefront coming from distant source
between interference of light and diffraction of light. illuminates the slit of size (= d ), each other point
within the slit becomes the source of secondary

Derivation: Consider two coherent sources of wavelets and these wavelets superpose on each
light S1 and S2. The two sources of light will other to generate the maxima and minima on the
produce an interference pattern on the screen screen; path difference between the rays, directing
MN. Consider a point P on the screen. Let φ be to the point P on the screen can be given as :
l
or sin q1 =
a
Such a point on the screen will be the position of
first secondary minimum.
For nth minimum at point P,

nl
sin qn = ...(1)
a

If yn is the distance of the nth minimum from the
In ∆ABT centre of the screen and D is the distance between
the slit and the screen, then from right-angled
BT D
sin=
q = ∆COP, we have
AB a
OP
tan qn =
Path difference, ∆ = a sin q CO
Condition of Minima: If slit AB is divided into the y
or tan qn = n ... (2)
equal halves (or in even parts) each of size d/2, for D

every point in part AM, there is a point in part MB
In case qn is small
that contribute the secondary wavelets out of phase sin qn = tan qn
(i.e., 180°). So, net contribution from two halves Therefore, from the eqs. (1) and (2), we have
becomes zero and hence intensity falls to zero for
yn nl
path difference =
D a
∆ = nl
∴ a sin θ = nl nlD ...(3)
or yn =
a
where, n is integer except n = 0.
Condition of Maxima: If slit AB is divided into three The width of the secondary maxima,
equal parts (or in odd parts). First two-third of the = yn - yn - 1
β

slit having a path difference λ/2 between them
nD l (n - 1)D l Dl
cancel each other, and only the remaining one-third = - =
a a a
of the slit contributes to the intensity at the point
between two minima, so for path difference Since β is independent of n, all the secondary
maxima are of same width β. The central maxima
 1 extends upto the distance y1 (the distance of first
D=  n +  l
 2  secondary minima) on both sides of the centre of

the screen.
 1
We have, a sin =
q n +  l Therefore, the width of the central maxima, b0 = 2y1
 2  From eq. (3) setting n = 1, we have
where, n is integer except n = 0. Dl
y1 =
a
2D l ...(4)
Therefore, β0 =
a
It follows that β0 = 2β i.e., the central maxima is
twice as wide as any other secondary maxima or
minima.
!
Divide derivation into steps and then proceed.
sini c
34. (i) From Snell’s law, µ = =
sinr v
The wavelets from points A and B will have a path
difference equal to BN. ⇒ v ∝ sin r, for given value of i,
Smaller the angle of refraction, smaller the
From the right-angled ∆ANB, we have
velocity of light in medium.
BN = AB sin q
Velocity of light is minimum in medium A, as the
or BN = a sin q angle of refraction is minimum, i.e. 15°.
Suppose that the point P on the screen is at such a (ii) Whenever rays of light travels through glass,
distance from the centre of the screen that BN = l they strike the glass-air interface at an angle
and the angle θ = q1. greater than critical angle of glass. They are
λ = a sin q1 totally reflected, hence crack appears silvery.
(iii) The refractive index of diamond is much higher 35. (i) In insulator, energy band gap is > 3 eV.
than that of glass. Due to high refractive index, the (ii) In conductor, separation between conduction and
critical angle for diamond-air interface is low. The valence bands is zero and in insulator, it is greater
diamond is cut suitably, so that the light entering than 1 eV. Hence in semiconductor the separation
the diamond from any face suffer multiple total between conduction and valence band is 1 eV.
(iii) According to band theory the forbidden gap in
internal reflections at the various surfaces. This
conductors Eg ≈ 0, in insulators Eg > 3 eV and in
gives sparkling effect to the diamonds.
semiconductors Eg < 3 eV.
Or
Or
real depth/thickness of object
Here, µ =
apparent depth
Now, due to refraction at two different boundaries,

the apparent depth of object
thickness of glass thickness of water
= +
µ glass µ water
6 4 Energy band diagram of conductors

= + = 4 + 3 = 7 cm
1.5 1.3 
Sample Paper-8
1. (a) 9.30 × 10-12 C
q For a long solenoid,
By Gauss’s law, φ =
ε0 Number of turns per metre, n = 103 /m
Current, I2 = 2.5A
-12
or q = fe0 = 1.05 × 8.854 × 10 C Magnetic field due to a long solenoid on its axis is
-12 B = m0nI2…(1)
= 9.30 × 10 C
Magnetic moment of a circular coil is
2. (b) -0.56 J
M = NAI1…(2)
1 q1q2 → → →
Potential energy, U = Torque, τ = M× B
4 πε0 r
t = MB sinq = MB [ q = 90° (Given)]
9 10 × 10−6 × ( −10 × 10−6 ) t = (NAI1) (m0nI2) [Using eqs. (1) and (2)]
= 9 × 10 ×
2 × 10−2 -6 21 22 × 10-7 × 103 × 2.5
t = 10 × 1 ×10 × ×4×
44 7
9 9 4

= - × 10 × 10 × 10
-12 -8
= 1.5 × 10 Nm
2

7. (a) 1.7 A
= - 45 J
Applying Kirchhoff’s first law,
U 45 I = 2 + 2 - 1 - 1.3 = 1.7 A
Due to dielectric, potential energy = =−
K 80 8. (c) b-rays

= - 0.56J X-rays, g-rays, heat rays are the form of EM waves but
3. (b) 0 A b-rays are not EM waves because they are charged
particles and are capable of getting deflected by the
P R 10 6
= ⇒ = magnetic field.
Q S 5 3
9. (d) 0.1 H
As, bridge is balanced, current will be zero. dI ( −2 − 2)
-5 Induced emf, e = −L = −L
4. (c) 8 × 10 H dt 0.05
Flux linked, 8 × 0.05
(4 )
8=L ⇒ L= = 0. 1 H
A 0.05 4
φ1 = µ0N 12I   ...(1)
L 
10. (c) there shall be no interference fringes.
A The light from two slits of Young’s double slit
Mutual inductance, M = µ0N 1N 2   ...(2)
L  experiment is of different colours/wavelengths/
frequencies. Hence, there shall be no interference
[Assuming both coil have same A and L ] fringes.
On dividing eq. (2) from eq. (1) 11. (b) A alone
M N2 hν0
= Work function for metal A, φ0A = eV
φ1 N 1 e

(6.6 × 10−34 ) × (1.8 × 1014 )
N 2φ 600 1.2 × 10−4 -5 = eV = 0.74 eV
⇒ M= = × = 8 × 10 H 1.6 × 10−19
N 1I 300 3

and work function for metal B,
5. (d) a helix (6.6 × 10−34 ) × (2.2 × 1014 )
φ0B = eV = 0.91 eV
T!p 1.6 × 10−19
→ → Since the incident energy 0.825 eV is greater than
When v and H are not perpendicular or parallel, the 0.74 eV and less than 0.91 eV, so photoelectrons are
charged particle moves in a helical path. emitted from metal A only.
6. (b) 1.5 × 10-8 Nm 12. (d) The stability of atom was established by the model.
Here, for small circular coil, 13. (a) 0.0024
Number of turns, N = 10, As we know, binding energy per nucleon,
2 2
Area A = 1 mm = 1 × 10 m
-6
E
E bn = b
Current I = 21 A A
1
44 For deuterium, A = 2
Given, Ebn = 1.115 MeV q = 90°; sin q = 1
Eb 10−7 × 10 × 10−2
\ 1.115 =
\ |dB| = = 4 × 10−8 T
2 25 × 10 −2
Eb = 2 × 1.115 = 2.23 meV
The direction of the field is in the +z-direction. This
 Eb = Dmc2
is so since
\ Mass defect,
2.23 dl × r = ∆x i × yj = y ∆x (i × j) = y ∆x k

∆m =
[ ∵ 1 amu= 931.5 MeV/c2]
931.5 We remind you of the following cyclic property of
= 0.0024 amu cross-products,
14. (d) 15 kW i × j = k ; j × k = i; k × i = j

Here, VP = 11000 V, Vs = 220 V
21. The radii of Bohr’s orbits are given by
NP = 6000, h = 60%, Po = 9 kW = 9 × 103 W
Output power Po ε0h 2n 2
Efficiency, η= = rn = or rn ∝ n2
2
Input power Pi πme

For ground state n = 1, r1 = 5.3 × 10-11 m (given)
po 9 × 103 2
∴ pi = = = 1.5 × 104 = 15 kW r2 n 
η 60 / 100 ∴ = 2
r1  n1 
15. (d) 8 mC
2
2
Current in the lower arm of the circuit, or r2 =   r1
1
2.5 V = 4r1 = 4 × 5.3 × 10-11 = 2.12 × 10-10 m
I = =1A
2 Ω + 0 .5 Ω For n = 3,

Potential difference across the internal resistance of r3 = (3)2 r1 = 9 × 5.3 × 10-11 = 4.77 × 10-10 m
cell = (0.5 Ω)(1A) = 0.5V Or
and potential difference across the 4µF capacitor Shortest wavelengths in Balmer series,
= 2.5V - 0.5V =2V
1  1 1
Charge on the capacitor plates, Q = CV =R  − 
λS 2 ∞
2 
= (4µF) (2V) = 8µC
\ λ = 4
16. (d) At 0K, germanium offers infinite resistance and it S
R
behaves as an insulator. Longest wavelengths in Balmer series,
17. (a) It is quite clear that the coloured spectrum is seen 1  1 1 
due to diffraction of white light on passing through fine =R  − 
2
λL 2 32 
slits made by fine threads in the muslin cloth.
36
18. (b) The specific charge (e/m) of the positive rays is not
\ λL =
5R
universal constant because these rays may consist of
36
ions of different elements. λL 9
So, = R =
5
19. (i)
X-rays/ g-rays; used for medical purposes/nuclear λS 4 5
R
reactions.
22. (i) Convex lens, because refracted ray is bending
(ii)
Microwaves; used for RADAR systems.
towards the principal axis.
T!p (ii) Concave lens, because refracted ray is bending

away from the principal axis.
The velocity differs when medium is present or absent.
The frequency of a particular wave is constant, only 23. In the circuit, if D1 is open and D2 is short, then equivalent
the wavelength changes when enters a medium from circuit will be
the vacuum. 3
20. We know that, 3

µ0 I dl sin θ
| dB | =
4π r 2

dl = Dx = 10 m, I = 10 A, r = 0.5 m = y,
-2
10V 2.5
m0/4p = 10−7 Tm A −1  D2 is reverse biased and D1 conducts.


3
Hence, equivalent circuit will be The properties of electric field lines are as follows:
3 3 (i)
The electric field lines are continuous curves.
(ii)
The tangent to the electric field line of force
at any point gives the direction of electric field
10V 2.5 10V 2.5
intensity at that point.
10 10 (iii)
Two electric field lines of force can never
\ Current, I = = = 1.818 A
3 + 2.5 5.5 intersect each other.
(iv) The electric field lines contract longitudinally.
Or

Self Inductance: Self inductance of a coil is numerically 26. (i) Figure shows the longitudinal sectional view of long
equal to the emf induced in that coil when the current current carrying solenoid. The current comes out of
the plane of paper at points marked.
in it changes at a unit rate. Alternatively, the self
inductance of a coil equals the flux linked with it when Q
l
a unit current flows through it. d c
The work done against induced emf is stored as
magnetic potential energy.
The rate of work done, when a current I passing
through the coil, is
a b
dW  dI 
= | ε | I = L I
dt  dt  B
∴ W = ∫ dW = ∫ 0LIdI = 1 LI 2
I
2
→
Let B be the magnetic field at any point inside
the solenoid.
Considering the rectangular closed path abcda.
Applying Ampere’s circuital law over loop
abcda.
→ →

∫ B .d l =m0 × (Total

current passing through
loop abcda)
φ
24. We know that, I = I0 cos2 → → → →
2 b → c → d → a → N 
∫a B . d l + ∫b B . d l + ∫c B . d l + ∫d B . d l m0  lI 
=
L 
l
(i) If path difference = where, N/L = number of turns per unit length
4
and ab = cd = l = length of rectangle.
2p
\ Dφ
= × Dx b c
l ∫a Bdl cos0° + ∫b Bdl cos90° + 0

2p l p
⇒ Dφ
= ×= a N 
l 4 2 + ∫ Bdl cos90° = m0   lI

d
L
Dφ 2 p
Also,
= I 4I0=
cos I0 cos2
4= 2I0 b N  N 
2 4 B ∫ dl =
m0   lI ⇒ Bl =
m0   lI
a L
  L 

l
(ii) If path difference, Dx = ⇒ B = µ0(N/L)I or B = µ0 nI
3
where, n = number of turns per unit length.
2p l 2p This is the required expression for magnetic
⇒ Dφ
= ×=
l 3 3 field inside the long current carrying solenoid.
Dφ  2p  (ii) An endless solenoid in the form of a ring is called
∴ I = 4I0 cos2
= I0 cos2 
4=  I0
2 3×2 a toroid.
25. 27. Given, B = 100 T = 100 Wb/m2

r = 10 cm = 0.1 m
T!p Magnetic flux
Try to write the main body of the answer into bullets f1 = BA = B × p r2 = 100 Wb m-2 × {3.14 × (0.1 m)2}
instead of paragraphs.
= 3.14 Wb.
On pulling the circular loop in square shape, the length Reactance of the capacitor, XC = VC/Iv = 173.2/0.8
of one side of the square, = 216.5 W
2πr 2 × 3.14 × 0.1 m 1 1

= = 0.157 m ∴Required capacitance, C =
=
4 4 2πf X c 2π × 50 × 216.5

-6
2
\ Area of the square = (0.157 m) = 0.02465 m

2 = 14.7 × 10 F = 14.7 mF

\ The magnetic flux linked with the square 29. (i) Einstein’s photoelectric equation is
eV0 = Kmax = hn – φ0
f2 = 100 × 0.02465 = 2.465 Wb
Important features of this equation are given below :
Now, change in magnetic flux (a) Photoemission occurs when frequency of
DFB = f2 - f1 = 2.465 - 3.14 = - 0.675 Wb incident radiation is more than the threshold
This change takes place in 0.1 second. φ

frequency, n ≥ 0 .
h
Hence, Average induced emf (b) Energy of emitted photoelectron is
proportional to energy of incident photon.
∆φB − 0.675 Wb
ε=− =− = 6.75 V. (ii)
Energy of incident photon is less than work
∆t 0 .1 s
function of P but just equal to that of Q.
28. Given, hn
For Q, work function, φ0 = (eV)
e
Number of turns = 10000 turns
Area of coil, A = 100 cm2 = 0.01 m2 6.6 × 10-34 × 1015
= = 4.1 eV
1.6 × 10-19
Angular speed, w = 140 rpm
 rpm  Or
140 22 × 2π rad / sec
W= ×2× ∵1 rpm =
60 7  60  (i) Due to symmetry, the flux linking the bigger loop due

to current of 2.0 A flowing through smaller loop will
= 14.7 rad/sec
be the same as the flux linking the smaller loop due to
current of 2.0 A flowing through the bigger loop.
Radius of bigger loop, a1 = 20 × 10 m; Radius of
-2

Often students forget to convert rpm into rad/sec.
smaller loop, a2 = 0.3 cm = 0.3 × 10 m. Distance of
-2
and magnetic field, B = 3.6 × 10 -2T smaller loop from the bigger loop, x = 15 cm = 0.15 m.
maximum value of induced emf = NBAw The current through either loop, I = 2.0 A.
-2
=10000 × 3.6 × 10 × 0.01 × 14.7 Magnetic field at the centre of the smaller loop due to
= 5292 × 10-2 = 52.9 V. current, I (= 2.0 A) in the bigger loop is
µ0Ia12 4 π × 10−7 × 2.0 × (20 × 10−2 )2
Or B1 = =
2(a12
+x ) 2 3/ 2
2[(20 × 10−2 )2 + (0.15)2 ]3/2
The voltage across the bulb (pure resistance) should
remain 100 V for its proper operation. Fig. (i) shows = 3.217 × 10-6 T
the required capacitor of capacitance C in series with Flux linked with smaller loop, f = B1A2
the lamp. The phasor diagram of the circuit is shown = 3.217 × 10-6 × p × (0.3 × 10-2)2
in Fig. 13.24 (ii). = 9.1 × 10-11 Wb
The flux linked with the bigger loop will also be
9.1 × 10-11 Wb.
φ 9.1 × 10−11
(ii) Mutual inductance, M = =
I 2. 0
= 4.55 × 10-11 H
1  1 1 
30. Here,
= = R
φ 2 eV, -
l  n2 n2 
 1 2
hc  1 1 
E= = hcR  - = φ + KE
Rated current of the bulb, Iv = 80/100 = 0.8 A l  n2 n2 
 1 2
Referring to the phasor diagram in Fig. 13.24 (ii), we Also, KE = eV0
have, n1 = 2, n2 = n
2 2 1 1 
Voltage across C, VC = (200) − (100) = 173.2 V \ E =hcR  - -19 -19
 =2 × 1.6 × 10 + 1.6 × 10 × 0.55
 4 n2 
1 1  +q
⇒ 6.62 × 10-34 × 3 × 108 × 1.097 ×107  -  Q
 4 n2 
= (3.2 + 0.88) × 10-19
1 +q
1 
⇒ 21.786 × 10-19  -  = 4.08 × 10
-19
–q
r1
 4 2
n 
1 1 r2
- 0.187 ⇒ n  4
=
4 n2

Q +q
• outer surface charge density =

31. (i) As per the question, 4 pr22
EAB -q
• inner surface charge density =

4 pr12
A Enet
α (b) Yes, the electric field inside a cavity is zero
irrespective of shape because the cavity has
a a EAC zero net charge.
(ii) B has higher capacitance.
−2q
Q
q A
60 60
B C Reason: C =
V
The magnitude,

If V = constant, then C ∝Q B
→ V
1 q
E AB = ⋅ =E As QB > QA
4 πε0 a 2

⇒
CB > C A
→ O Q
1 2q
and E AC = ⋅
4 πε0 a 2
= 2E 32. (i) Kirchhoff’s
First Law: The algebraic sum of
electric currents at any junction of electric circuit
is equal is zero, i.e., the sum of currents entering
2 2
\ E net = (2E ) + (E ) + 2 × 2E × E cos 120°
into a junction is equal to the sum I1 I3
of current leaving the junction.
 1 ΣI = 0 O
E net = (2E )2 + E 2 + 2 × 2E × E ×  − 
 2 At junction O, I1 + I2 = I3 + I4 I I4

2
Kirchhoff’s Second Law: In any closed mesh of

E net = 4E 2 + E 2 − 2E 2 electric circuits, the algebraic sum of emf’s of cell

and the product of currents and resistances is
1 q 3 always equal to zero.
E net = E 3 =
4 πε0 a 2 i.e., ΣE + ΣIR = 0
Kirchhoff’s second law is a law of conservation of
(ii) The direction of resultant electric field at vertex A energy.
(ii) (a) The circuit diagram can be redrawn as given
E AB sin 120°
tan α = below:
E AC + E AB cos 120° r

r r
3
E×
2 1 C
= tan a = A B
 -1  3
2E + E ×  
2 r r
Hence, a = 30° (with side AC ) r

+ −
Or
E, r

(i) (a) When a charge +q is placed at the centre of
r r
RAC = ; RCB =
spherical cavity, as shown in the figure, then, 2 2

charge induced on the inner surface of a shell is 1 1 1 1 3 r
⇒ = + + = ⇒ RAB =
-q and charge induced on the outer surface of RAB r r r r 3
shell is +q. A charge of magnitude Q is placed on r 4r
Total resistance of circuitr =r + =
3 3
the outer surface of the shell is Q +q. So,
E 3E φ
Current drawn from cell,
= I = ∴ I = R 2 = 4a 2 cos2
4r / 3 4r 2
2 2
 3E  9E φ
2
(b) Power consumed = I r =   r= For constructive interference, cos = ±1
2
 4r  16r
φ
⇒ = np
Or 2
(i) (a) For conductor
⇒ φ = 2nπ
For destructive interference,
φ φ p
cos = 0 ⇒ = (2n + 1)
2 2 2
⇒ φ = (2n + 1)π
(ii) (a) For fringes to be seen, s/S ≤ λ/d
Condition should be satisfied.
where, s = size of the source and S = distance
of the source from the plane of two slits.
(b) For semiconductor
As, the source slit width increase, the fringe
pattern get less and less sharp.
When the source slit is so wide, then above
condition is not satisfied and the interference
pattern disappears.
(b) The interference pattern due to different
colour components of white light overlap.
The central bright fringes for different
colours are at the same position. Therefore,

The relation between resistivity and relaxation time, the central fringes are white. And on the
m either side of the central fringe, i.e. central
ρ= maxima, Coloured bands will appear.
ne 2t
The fringe closed on either side of central

In conductors, average relaxation time decreases white fringe is red and the farthest will be
with increase in temperature, resulting in an increase blue. After a few fringes, no clear fringes
in resistivity. pattern is seen.
In semiconductors, the increase in number density Or
(with increase in temperature) is more than the
Let two coherent sources of light, S1 and S2 (narrow
decrease in relaxation time, the net result is
slits) are derived from a source S. The two slits,
therefore a decrease in resistivity.
S1 and S2 are equidistant from source, S. Now, suppose
(ii) (a) V = E - Ir
S1 and S2 are separated by distance d. The slits and
When, I = 0, V = E
screen are distance D apart.

⇒ E = 6 V
(b) E = V + Ir

⇒ 6 = 4 + 1 × r
r = 2Ω
33. (i) Given, y1 = a cos ωt
and y2 = a cos (ωt + φ)
The resultant displacement is given by
y = y1 + y2
= a cos ωt + a cos (ωt + φ)
= a cos ωt + a cosωt cos φ - a sin ωt sin φ
= a cos ωt (1 + cos φ) - a sin ωt sin φ Considering any arbitrary point P on the screen at a
Put, R cos θ = a(1 + cos φ) …(1) distance yn from the centre O. The path difference

and R sinθ = a sin φ …(2) between interfering waves is given by S2P - S1P.
By squaring and adding eqs. (1) and (2), we get i.e., Path difference = S2P - S1P = S2M
2 2 2 2 2
R = a (1 + cos φ + 2 cos φ) + a sin φ S2P - S1P = d sin q
φ where, S1M ⊥ S2P
= 2a 2 (1 + cos
= φ) 4a 2 cos2
2 [ ∠S2S1M = ∠OCP (by geometry)]
⇒ S1P = PM (ii) Power, P = P1 + P2 = 1.5 + 1.0 = 2.5 D
If q is small, then sin q ≈ q ≈ tan q 1 1
(iii) Focal length, f = = m = + 20 cm
\ Path difference, P 5
S2P - S1P = S2P - PM = S2M = d sin q ≈ d tan q Or
y  Power of combination of lens,
Path difference = d  n  ......(1)
D  100 100 100 100
  P = P1 + P2 = + = + = 4 − 5 = −1 D
OP yn f1 f2 25 ( −20)
[ In DPCO, tan= q = ]
CO D
For constructive interference As the power is negative, the system will be diverging.
Path difference = nl, where, n = 0, 1, 2, ....
[from eq. (1)] 35. (i) As it is forward biased, so it takes positive value.
5V
Dnλ Hence, the output will
⇒ yn =
d
B
(ii)
D (n + 1) λ
⇒ yn + 1 = D1 D2
d
A C
 Fringe width of dark fringe = yn + 1 - yn RL
[ dark fringe exist between two bright fringes ]
D3
Dλ Dnλ D4
β= (n + 1) −
d d D
Dλ Dλ
= (n + 1 − n ) =
d d
Dλ AC input is applied across A and C and output is
Fringe width of dark fringe, β = ......(2)
d taken across BD.
For destructive interference V0
l
Path difference = (2n - 1) , Where, n = 1, 2, 3, ....
2
y′ d λ
n D1 D4 D2 D3 D1 D4 D2 D3
⇒ = (2n − 1) [from eq. (1)]
D 2
When positive cycle is fed to AC, D1 and D4 conduct
(2n − 1) Dλ
⇒ y'n = and when negative cycle is fed to AC, D3 and D2
2d
conduct in the same direction. Output across BD
where, y'n is the separation of nth order dark fringe
from central fringe. is thus full wave rectified.
Dλ (iii) In the given circuit, for the first half-cycle of
\ y'n + 1 = (2n + 1)
2d rectified output when the voltage across C will
\ Fringe width of bright fringe = Separation between rise, it gets charged. Then, in the presence of RL, it
(n + 1)th and nth order dark fringe from centred
gets discharged through it and the voltage begins
fringe
to fall.
⇒ b = y'n + 1 - y'n
In the next half-cycle of rectified output, it again
(2n + 1)Dλ (2n − 1)Dλ
β= − gets charged to peak value and will similarly gets
or 2d 2d
discharged through RL. Thus, a steady DC output
Dλ Dλ
= [2n + 1 − 2n + 1] = from pulsating voltage is obtained. In other words,
2d d
capacitor helps to filter out the AC ripple and give
Dλ
Fringe width of bright fringe, β = ......(3) a pure DC voltage or bypass AC component to get
d
DC.
From eqs. (2) and (3), we can see that,
Or
Fringe width of dark fringe
Output frequency of full wave rectifier is twice
= Fringe width bright fringe
the output frequency of half-wave rectifier.
Dλ
= fhalf-wave 1
d
∴ =
ffull-wave 2
34. (i) The focal length of the combination will be
increases. 
Sample Paper-9
1. (b) electric field intensity 8. (d) frequency or wavelength
2. (c) S1 is true, S2 is true and S1 is the cause of S2. 9. (d) 9.1 × 10-11 Weber
Potential at any point inside a charged conducting
Let flux linked with smaller loop is φ1 and with bigger
sphere = potential on the surface,
kq loop is φ2 .
V= =100 V
R 2 1
R2
Now, dV = 0 (V is constant)
R1
E =− 15 cm I1
dr I2
3. (c) 0.031 A
Given, R2 = 0.2 m,
Using Kirchhoff’s law in loop AP2P1DA
I P2 I – I1 B
A R1 = 0.003 m,

I1
7V, 2 3V, 1 =X 15
= cm 0.15 m,

10
Now, flux φ1 =B2A1
D I P1 I – I1 C m0  2pR22I 2  2
=   pR
∴ 10I1 + 2I - 7 = 0 4 p  (R 2 + x 2 )3/2  1
 2 
10I1 + 2I = 7 ...(1)
Using Kirchhoff’s law in loop P2P1CBP2 φ1 µ0 2πR22 πR12
Mutual inductance, M = =
-3 + 1(I - I1) - 10I1 = 0 I2 4 π (R 2 + x 2 )3/2
2
I - 11I1 = 3; I = 3 + 11I1...(2)
Now, φ2 =MI 1
10I1 + 2(3 + 11I1) = 7 µ0 2πR22πR12
⇒ 10I1 + 6 + 22I1 = 7 = .I 1
4 π (R 2 + x 2 )3/2
1 2
∴ 32I1 = 1; I 1 = = 0.031 A
32 10−7 × 2 × 3.14 × (0.2)2 × 3.14 × (0.003)2
= × 2.0
4. (d) there is a constant current in the counter-clockwise [(0.2)2 + (0.15)2 ]3/2

direction in A. -11
≈ 9.1 × 10 Weber
Coil A must be carrying a constant current in counter-
10. (b) hyperbola
clockwise direction. Because of that, when A moves
towards B, current induced in B is counter-clockwise 11. (a) 2V
direction as per Lenz’s law. The current in B would Given threshold frequency, n0 = 3.3 × 1014 Hz
14
stops when A steps moving. Frequency of incident light, n = 8.2 × 10 Hz
 NAB  h (ν − ν0 )
5. (c)  I As eV0 = h(n - n0) or V =
0
 K  e
Since magnetic torque on the coil, t = NIAB 6.63 × 10−34 (8.2 × 1014 − 3.3 × 1014 )
V0 = =2V
This torque is balanced by counter torque 1.6 × 10−19
 NAB  12. (d) nucleus
∴ Kf = NIAB or φ =  I
 K  13. (a) 27
We know, nuclear radius, R = R0(A)1/3
where, K is torsional constant. It is a scalar quantity where, A is the mass number of a nucleus.
having dimension of torque or energy i.e., [ML2T-2]. Given, R = 3.6 fm
6. (a) paramagnetic material \
1/3
3.6 fm = (1.2 fm) (A )[ R0 = 1.2 fm]

Curie temperature is the temperature at which the or A = (3)3 = 27
magnetic properties of material change. 14. (b)
7. (a) 4 A
Applying KCL at point B,
I = 2A + 2A = 4A
Inductive reactance, 20. (i) The angle of dip decreases from 90° to 0°.
XL = wL =2pvL ⇒ XL ∝ n (ii) For paramagnetic materials, no magnetic lines of
Hence, inductive reactance increases linearly with force enter in it. So, specimen X is paramagnetic.
frequency. For ferromagnetic materials, all magnetic lines of
15. (a) Drift velocity alone force prefer to go through it. So, specimen Y is
16. (a) In half-wave rectifier, only one diode is used. Diode ferromagnetic.
is biased only when ac is in positive half cycle. For 21. For longest wavelength of Lyman series, ni = 2
negative half ac cycle the diode is reversed biased 1  1 1  3R
and there is no output corresponding to that. Since for = R - =

lmax 12
22  4
only one-half cycle we get a voltage output, because
of which it is called half-wave rectifier. 1 4 4
= =
17. (b) The interference patterns due to different lmax 3R 3 × 1.097 × 107

component colours of white light overlap incoherently.
= 1.215 × 10-7 m
λmax = 1215 Å
The lines of the Lyman series are found in ultraviolet
region.
Or
Energy of a photon corresponding to wavelength l,
c 6.6 × 10−34 × 3 × 108
E =h = J
λ 275 × 10−9

The central bright fringes for different colours are 6.6 × 10−34 × 3 × 108
at the same position. Therefore, the central fringe is = eV
275 × 10−9 × 1.6 × 10−9
λb
white. For a point P at which S2P - S1P = where
2 6.6 × 3 × 102
= = 4.5 eV
lb = 4000 Å represents the wavelength for the blue 275 × 1.6

colour, the blue component will be absent and the The calculated energy of the photon matches with
fringe will appear red in colour. Slightly farther the transition B.
away where S 2Q - S 1Q = lb =

λr
2
where lr ≈ 8000 Å !
Photon is emitted when electron transits from higher
is the wavelength for the red colour, the fringe will energy state to lower energy state, the difference of energy
be predominantly blue. Thus, the fringe closest on of the state appear in form of energy of photon.
either side of the central white fringe is red and the
22. (i) The focal length of original equi-convex lens is f.
farthest will appear blue.
Let the focal length of each part after cutting be F.
18. (a) de-Broglie wavelength associated with gas
1 1 1 1 2
1 Here, = + ⇒ =
molecules varies as l ∝ . f F F f F
T
F
19. (i) Infrared waves have frequencies lower than those ⇒ f = ⇒ F = 2f
2
of visible light, vibrate not only the electrons,
Power of each part will be given by
but also the entire atoms or molecules in the
structure of the substance they encountered. 1 1
P= ⇒P =
F 2f
This vibration increases the internal energy and
hence the temperature of the structure, which is why (ii) From lens maker’s formula, we have
infrared waves are often called heat waves.  1 1 
P = (m - 1)  - 
(ii) Electromagnetic waves transport linear R R 
 1 2
momentum as it travels through space. If an
 1  1    R1 = R and 
electromagnetic wave transfer a total energy U 5 = (1.55 - 1)  -    
 R  -R    R2 = -R 
to a completely absorbing surface in time t, then
total linear momentum delivered to that surface 2
or =5 0.55 ×
is given as: R
U 0.55 × 2
p= R=
c 5

where, c is the speed of electromagnetic wave. R = 0.22 m = 22 cm
23. Note that thermally generated electrons (ni ~ 1016 m-3) BX
are negligibly small as compared to those produced tan=
q = 1
BY
by doping.
Therefore, ne ≈ ND.
⇒ q = 45° with either B1 or B2.
Since nenh = ni2, 27. (i) Distinction between conductors (metals), insulators
and semiconductors on the basis of energy bands:
The number of holes, nh = (2.25 × 1032)/(5 × 1022)
Overlapped Conduction
9 -3
≈ 4.5 × 10 m conduction band band
Electron energies
Or (Eg 0)
(i) From the given curve, we have
Electron energies
EC
voltage, V = 0.7 V for current, EV
I = 15 mA. EC Eg ~
– 6 eV
∴ Resistance, V= 0.7 Valence

= 47Ω band EV
I 15 × 10-3
(a) Conductors (Metals)
(ii) For V = -10V, we have Valence
band
I = -1 µA = -1 × 10–6 A (b) Insulators
-10
⇒ R= = 1.0 × 107 Ω Conduction
-1 × 10-6 band
Electron energies
24. As it is clear from the figure, the intensities of the two
reflected beams will be I/4 and 9I/64. EC
Eg < 3 eV
9I/64
EV
3I/16
Valence
I/4 band
(c) Semiconductors
3I/4
I Common
2
Now, Imax = K (a1 + a2) Many students couldn’t draw these diagrams
2 correctly.
 I 3 I 49 IK
=K  +  =
 2 8  64 (a) Conductors (Metals): In conductors, either
conduction and valence band partially overlap
2 each other or the conduction band is partially
 I 3 I IK
and Imin =K  ~  = . filled. Forbidden energy gap does not exists
 2 8  64
(Eg ≈ 0). This makes a large number of free
Imin I / 64 electrons available for electrical conduction.
\ = = 1 : 49 So, the metals have high conductivity.
Imax 49 I / 64
(b) Insulators: In insulators, conduction band is
25. Given, φ= 30° , t = 9 × 10- 25 Nm, E = 104 N/C empty and valence band is totally filled. Eg is
We know, torque t = PE sin q
very large (≈6 eV). It is not possible to give such
t large amount of energy to electrons by any
∴ P=
E sin q means. Hence, conduction band remains total

empty and the crystal remains as insulator.
9 × 10- 25 (c) Semiconductors: In semiconductors, conduction
⇒ P=
104 × sin 30° band is empty and valence band is totally filled.

Eg is quite small (< 3 eV). At 0K , electrons
9 × 10− 25 × 10− 4
= = 18 × 10− 29 C-m are not able to cross this energy gap and
1/ 2
semiconductor behaves as an insulator. But at
26. According to the question, room temperature, some electrons are able to
jump to conduction band and semiconductor
µ0IR 2
B1 = B2 = acquires small conductivity.
2(R 2 + x 2 )3/2 (ii) At absolute zero temperature, conductivities of

both type of semiconductors are zero.
m0IR 2 2
⇒ B= B12 + B12 = B1 2 = [∵ B1 = B2] For equal doping, conductivity of n-type
2(R 2 + x 2 )3/2 semiconductor is more than that of p-type

semiconductor at room temperature.
28.
Principle of AC Generator: The working of an AC V0R
generator is based on the principle of electromagnetic (a) R ⇒VR = I0R =
R 2 + X L2
induction. When a closed coil is rotated in a uniform
magnetic field with its axis perpendicular to the V0X L
(b) L ⇒VL= I0X L=
magnetic field, the magnetic flux linked with the coil
R 2 + X L2
changes and an induced emf and hence a current is
set-up in it. (ii) Phase difference between V and I is

Diagram of an AC Generator V  I
φ = tan-1  L 
Coil Axle V
 R

-1  X L

⇒ φ =tan  R 
 
V
V is ahead of I.
29. (i) Einstein’s photoelectric equation is
N S eV0 = Kmax = hn – φ0
Important features of this equation are given below:
Slip (a) Photoemission occurs when frequency of
rings incident radiation is more than the threshold
Alternating emf
φ
frequency, n ≥ 0 .
h
(b) Energy of emitted photoelectron is
Carbon proportional to energy of incident photon.
brushes
(ii) Energy of incident photon is less than work
Let N be the number of turns in the coil, A be the function of P but just equal to that of Q.
area of face of each arm, B be the magnitude of hn
the magnetic field, q be the angle which normal to For Q, work function, φ0 = (eV)
→
e
the coil makes with field B at any instant t and w 6.6 × 10-34 × 1015
= = 4.1 eV
is the angular velocity with which coil rotates. 1.6 × 10-19

The magnetic flux linked with the coil at any instant
Or
t will be,
Three features of photoelectric effect, which
= φ NAB
= cos q NAB cos ωt cannot be explained by the wave theory of light,
are:
By Faraday’s rule, the induced emf is given by: (a) Maximum kinetic energy of emitted electrons
is indenpendent of the intensity of incident
dφ d light.
E=
- - [NAB cos ωt ]
=
dt dt (b) There exists a ‘threshold frequency’ for each
photosensitive material.
⇒ = E NAB sin ωt ⋅ω
(c) ‘Photoelectric effect’ is instantaneous in
nature.
⇒ = E E0 sin ωt [Here, E0 = NABw] Einstein’s photoelectric equation,

KEmax = hn - f1
When a load of resistance R is connected across the [Alternatively: eV0 - hn - f0] can be used to explain
terminals, a current I flows in the external circuit. these features as follows.
E E sin ωt (a) Einstein’s equation shows that Kmax ∝ n.
∴ =I = 0 = I0 sin ωt However, Kmax does not depend on the intensity
R R
of light.
E0 φ
where, I0 = (b) Einstein’s equations shows that for n < 0 , K max
R h
φ0
n< , K max becomes negative, i.e, there cannot be any
Or h
 φ0 
photoemission for n < n0  where, n0 = h  .
 
(c) The free electrons in the metal, that completely
absorb the energy of the incident photons, get
emitted instantaneously.
1  1 1 
30. Here,
= φ 2 eV, = R -

l  n2 n2 
(i) Peak value of voltage drop across,  1 2
 1 Hence,
hc 1 
E= = hcR  - = φ + KE E = EA + EB = 2.7 × 106 + 2.7 × 106
l  n2 n2 
 1 2 = 5.4 × 106 N/C
Also, KE = eV0 The direction of E (resultant electric field) will be
n1 = 2, n2 = n from O to B or towards B.
Or
1 1  -19 -19
\ E =hcR  -  =2 × 1.6 × 10 + 1.6 × 10 × 0.55 (i) Here, the dipole moment of each molecule
 4 2
n  = 10-29 C-m. 1 mole of the substance contains
1 6 × 1023 molecules. Therefore, total dipole
1 
⇒ 6.62 × 10-34 × 3 × 108 × 1.097 ×107  -  moment of all molecules,
 4 n2  p = 6 × 1023 × 10-29 C-m = 6 × 10-6 C-m
= (3.2 + 0.88) × 10-19
Initial potential energy,
1 1  U = - pE cos q = -6 × 10-6 × 106 cos 60° = -3 J
⇒ 21.786 × 10-19  -  = 4.08 × 10
-19
 4 2
n  Final potential energy (when q = 0°),
(finally p and E are aligned in the same direction]
1 1
- 0.187 ⇒ n  4
= Uf = -6 × 10-6 × 106 cos0° = -6 J
4 n2
Change in potential energy
= -6 J -(-3 J) = -3 J
31. (i) (a) Same, since the charge enclosed in both So, there is a loss in potential energy. This must
cases is same, hence amount of flux does not be the energy released by the substance in the
change. form of heat in aligning its dipole.
q (ii) Energy stored in the capacitor can be given as
(b) As, we know φE = (Gauss’s law)
ε0 1
= CV 2
q = fE e0 = -1 × 10 × 8.85 × 10 3 -12
≈ -8.8 nC 2
(ii) Given, AB = 20 cm When the switch S is connected to point 2, energy
20 cm dissipated on connecting across 8mF will be
qA = 3 m C O EA EB qB = -3mC 1 C C 
=  1 2 V 2
AO = OB = 10 cm = 0.1 m 2  C1 + C2 

qA = 3mC = 3 × 10-6 C
1  2 × 8  2 1 16
qB = -3mC = -3 × 10-6 C =  V = × ×V 2
2  10  2 10
The electric field at a point due to a charge q is
1 q Therefore, % loss of energy
E= .
4µε0 r 2  1 16 2 
 2 × 10V × 100 
where, r is the distance between charge and the =  = 80%
 1
point. × 2 ×V 2 
 2 

Electric field due to qA at O is EA.
32. (i) Expression for Drift Velocity: Let a potential
1 q
. A EA = difference V is applied across the ends of a
4 πε (AO )2 conductor, then each free electron will experience
0
a force
9 × 109 × 3 × 10−6 27 × 103
EA = = = 2.7 × 10−6 N/C
(0.1) 2 0. 1 × 0. 1 E

The direction of EA is A to O, i.e., towards O or
towards OB as the electric field is always directed
away from positive charge.
Electric field due to qB at O is EB.
q →
1
. B EB = → → eE → → →
4 πε0 (OB )2 F = -eE ⇒ a = - [∵ F = m a ] …(1)
m
9 × 109 × 3 × 10−6 27 × 103 Average of all random velocities under this
EB = = = 2.7 × 106 N/C acceleration is the drift velocity
(0.1)2 0.1 × 0.1
→ → →
→ v1 + v2 + … + vN
The direction of EB is O to B, i.e., towards B or ⇒ vd =
N
towards OB as the electric field is always directed
towards the negative charge. → → → → → →
Now, we see that both EA and EB are in same (u1 + a t1 ) + (u2 + a t2 ) + … + (uN + a tN )
=
direction. So, the resultant electric field at O is E. N
→ → → 33. When plane wavefront coming from distant source
→ u1 + u2 + … + uN →  t + t + …+ t
N

=
⇒ v +a 1 2
 illuminates the slit of size (= d ), each other point within
N  N 
  the slit becomes the source of secondary wavelets,
⇒ v→ = 0 + → → and these wavelets superpose on each other to
d a t= a t
generate the maxima and minima on the screen path
From eq. (1), difference between the rays, directing to the point P
→
→ eE on the screen can be given as:
vd = − τ
m
(ii) (a) Let E be emf and r is the internal resistance of To P
each cell.
V = Eeq - Ir ⇒ V = 3E - Ir A
When, I = 0, V = 6 V (from graph)
6 From
⇒ 6 = 3E - 0 ⇒ E = = 2V source
a To C
3 M T

Emf of each cell is 2V.
B
(b) For maximum power dissipation, the effective
internal resistance (r) of cells must be equal In ∆ABT
to external resistance (R). BT D
When, V = 0, I = 2 A sin=
q =
AB a
 V = Eeq - Ir
∴ 0 = 3E - 2 × r Path difference, ∆ = a sin q
or, 0 = 3 × 2 - 2r or, 2r = 6 ⇒ r = 3W Condition of Minima: If slit AB is divided into the
For maximum power dissipation current in equal halves (or in even parts) each of size d/2,
circuit, for every point in part AM, there is a point in part
r = 3W = R
MB that contribute the secondary wavelets out
i.e., internal resistance = external resistance.
of phase (i.e., 180°). So, net contribution from two
Eeq 3×2
I= ∴I = = 1A halves becomes zero and hence intensity falls to
R +r 3+3 zero for path difference.
Or ∆ = nl
(i) Relation between Current and Drift Velocity:
∴ a sin θ = nl
Let a potential difference V is applied across the
ends of a conductor as shown. If n be the number where, n is integer except n = 0.
of free electrons per unit volume then charge Condition of Maxima: If slit AB is divided into three
crossing area A in time Dt. equal parts (or in odd parts). First two-third of the
∆Q = Ne = (n Avd ∆t) e
slit having a path difference λ/2 between them
x vdt
cancel each other, and only the remaining one-
E third of the slit contributes to the intensity at the
point between two minima, so for path difference
A  1
D=  n +  l
 2

DQ neAvd Dt  1
⇒ =I = We have, a sin =
q n +  l
Dt Dt  2

I ne Avd where, n is integer except n = 0
⇒ I = ne Avd and =j =
A A Screen
j = nevd Slit P
⇒
L2
(ii) Given, L1
y
R27 = 100 W, R1 = 117 W, t = ?, a = 1.70 × 10-4/°C A θ
R1 − R27 θ
Temperature coefficient, α = C θ
R27 (t − 27) a O
N
Temperature, t is unknown. θ
R1 − R27 117 − 100 B

⇒ t − 27 = = = 1000
R27 .α 100 × 1.70 × 10−4 Plane
wavefront

⇒ t = 1000 + 27 = 1027°C D
The wavelets from points A and B will have a path Or
difference equal to BN. (i) Given, y1 = a cos ωt
From the right-angled ∆ANB, we have and y2 = a cos (ωt + φ)
BN = AB sin q The resultant displacement is given by
or BN = a sin q y = y1 + y2
Suppose that the point P on the screen is at such a = a cos ωt + a cos (ωt + φ)
distance from the centre of the screen that BN = l = a cos ωt + a cosωt cos φ - a sin ωt sin φ
and the angle θ = q1. = a cos ωt (1 + cos φ) - a sin ωt sin φ
λ = a sin q1 Put, R cos θ = a(1 + cos φ) …(1)
l
and R sinθ = a sin φ …(2)
or sin q1 =
a By squaring and adding eqs. (1) and (2), we get
Such a point on the screen will be the position of R 2 = a 2 (1 + cos2 φ + 2 cos φ) + a2 sin2 φ
first secondary minimum. φ
= 2a 2 (1 + cos
= φ) 4a 2 cos2
For nth minimum at point P, 2
nl φ
sin qn = …(1) ∴ I = R 2 = 4a 2 cos2
a 2
If yn is the distance of the nth minimum from the φ
centre of the screen and D is the distance between For constructive interference, cos = ±1
2
the slit and the screen, then from right-angled φ
⇒ = np
∆COP, we have 2
OP ⇒ φ = 2nπ
tan qn =
CO For destructive interference,
or
y …(2) φ φ p
tan qn = n cos = 0 ⇒ = (2n + 1)
D 2 2 2
In case qn is small ⇒ φ = (2n + 1)π
sin qn = tan qn (ii) (a) For fringes to be seen, s/S ≤ λ/d
Therefore, from the eqs. (1) and (2), we have Condition should be satisfied.
yn nl where, s = size of the source and S = distance
=
D a of the source from the plane of two slits.
nlD As, the source slit width increase, the fringe
or yn = …(3)
a pattern get less and less sharp.

When the source slit is so wide, then above
The width of the secondary maxima,
condition is not satisfied and the interference
= yn - yn - 1
β
pattern disappears.
nD l (n - 1)D l D l (b) The interference pattern due to different
= - =
a a a colour components of white light overlap.
Since β is independent of n, all the secondary The central bright fringes for different
maxima are of same width β. The central maxima colours are at the same position. Therefore,
extends upto the distance y1 (the distance of first the central fringes are white. And on the
secondary minima) on both sides of the centre of
either side of the central fringe, i.e. central
the screen.
Therefore, the width of the central maxima, b0 = 2y1 maxima, Coloured bands will appear.
From eq. (3) setting n = 1, we have The fringe closed on either side of central
Dl white fringe is red and the farthest will be
y1 =
a blue. After a few fringes, no clear fringes
2D l pattern is seen.
Therefore, β0 = …(4)
a 34. (i) As the beam is initially parallel, the surface of
It follows that β0 = 2β i.e., the central maxima is wavefront is planar.
twice as wide as any other secondary maxima or (ii) According to Huygen’s principle, the surface of
minima. constant phase is called a wavefront.
! (iii) Wavefront is the locus of all points, where the

particles of the medium vibrate with the same
phase.
Or (iii) The magnitude of induced emf is
(iv) Huygens’ principle states that every point on a dI | ε | dt
| ε |= L ⇒ L=
wave-front may be considered as a source of dt dI
secondary waves. volt × second

or L= = ohm second
ampere
35. (i) Here, I = 2.5 A, L = 5 H
Magnetic flux linked with the coil is Or
fB = LI = (5H) (2.5A) = 12.5Wb
Here, L = 10 henry, I1 = 9 A, I2 = 4A
(ii) The inductance of a solenoid is and ∆t = 0.2 second
L = µ0n Al 2 Then, induced e.m.f.

dI (l − l )
where, A is the area of cross-section of the ε1 = −L = −L 2 1
dt ∆t
solenoid, l its length and n is the number of turns
per unit length. −10 × (4 − 9) 50
= = = 250 V
2 0.2 0. 2
As , A = pR , where R is the radius of the solenoid.
2 2 2
L = m0n pR l ⇒ L∝R

Sample Paper-10
1. (c) neutral or positively charged but different from that of a i.e., Ia ≠ Ib but Ib = Ic. As
2. (c) half the potential difference of 10µF capacitor stopping potential is same for curves a and b, hence
na = nb.
20 × 10 200
Ceq = = µF
20 + 10 30
 200 
Charge on each capacitor, Q = CeqV =  V
 30 
200 200
V V
30 V 2V
V 1 = = ⇒ V2 = 30 =
20 3 10 3
Hence, 20µF capacitor has half the potential
12. (d) 10 Å
difference of 10µF capacitor. For first line of Lyman series n1 = 1, n2 = 2
3. (c) 6/11 A 1 3
∴ = Z2R
On simplifying the circuit, λ 4
6V
1 3
+ – In the case of hydrogen atom, Z = 1 , then =R
1 λ 4
1 3
For hydrogen-like atom, Z = 11 , then = 121 R
λ' 4
10 λ' 3R 4 1
⇒ = × =
V 6 λ 4 121 R × 3 121
I= = A
R 11 λ 1210
⇒ λ' = = = 10Å
4. (d) zero 121 121
No flux change is taking place because magnetic field 13. (d) strong nuclear force
is uniform everywhere.
14. (d) 8 Hz
As there is no change in flux, induced emf is zero and
therefore no current induced. Here, L = 5 H, C = 80 mF = 80 × 10-6 F; R = 40 W
5. (a) I is doubled. Vrms = 230 V
M = IA when I is doubled, M is doubled. The resonant angular frequency is
Also, t = MB sinq, when M is doubled, torque is doubled,
hence tension is doubled. 1 1
ωr = = = 50 rad s −1
6. (a) slightly less LC 5 × 80 × 10 −6

7. (a) 4 A
ω 50
From Kirchhoff’s first law, in an electric circuit, the ∴ vr = r =
= 8 Hz
2 π 2π
algebraic sum of the currents meeting at any junction
is zero. 15. (c) In (i), V remains same and hence Q changes
i.e., Si = 0 16. (d) In p-n junction, the diffusion of majority carriers
takes place when junction is forward biased and
Taking inward direction of current as positive and
outward as negative, we have drifting of minority carriers takes place across the
junction, when reverse biased. The reverse bias
1A-3A-2A+I=0
opposes the majority carriers but makes the minority
⇒ I = 4 A carriers to cross the p-n junction. Thus, the small
8. (c) Energy and momentum current in mA flows during reverse bias.
9. (c) m0pa2n1n2L 17. (c) The beautiful colours are seen on account of
10. (b) nl interference of light reflected from the upper and the
Constructive interference occurs when the path lower surfaces of the thin films.
difference (S1P – S2P) is an integral multiple of l, 18. (b) Charge does not change with speed but mass,
i.e., S1P – S2P = nl m0
varies with the speed as per relation m = .
where n = 0, 1, 2, 3, ......
v2
11. (a) na = nb and Ia ≠ Ib 1-
c2
From the graph, we note that the saturation current Hence, specific charge e/m decreases with increase in
is same for curves b and c but different for curve speed.
a. Therefore, intensities of b and c will be equal
19. The positive charge on the nucleus is Ze, where Z is the

atomic number (in case of hydrogen atom, Z = 1). As
the centripetal force is provided by the electrostatic
force of attraction, we have
mv 2 1 (Ze ) × e
= .
r 4 pε0 r2

Ze 2
← Direction of Propagation → or mv 2 = ...(1)
4 pε0r

T!p From the first postulate of Bohr’s atomic model, the
We are taking direction of electric field (E) and angular momentum of the electron is
magnetic field (B) in such a way that these are follow h
mvr = n ...(2)
the right handed system of axes. 2p

20. (i) Material X is paramagnetic substance. When a where, n = 1, 2, 3, ..... is principal quantum number.
specimen of a paramagnetic substance is placed h 2ε0
in a magnetising field, the lines of force prefer to From eqs. (1) and (2), we get r = n 2
pmZe 2
pass through the specimen rather than through
air. Thus, magnetic induction inside the sample is This is the equation for the radii of the permitted orbits.
more than the magnetic intensity.
(ii) Material Y is ferromagnetic substance. These are
the substances in which a strong magnetism is
Derivation for the velocity of electron also have the
produced in the same direction as the applied common starting.
magnetic field, these are strongly attracted by
a magnet, exhibits highly concentrated lines of 22. Characteristics of the image formed
force. (i) Virtual (ii) Enlarged.
Rhc
21. The energy-levels of H-atom are given by E n = − (iii) On the same side of the object (any two)
n2
For given transition n1 = 1, n2 = 4 The lens formula:
Rhc Rhc 1 1 1
\ E 1 = − , E2 = − = +
2 2 v u f
1 4
\ Energy of absorbed photon, DE = E2 - E1 For vitual image
 1 1  15 u is –ve, v is –ve and f is +ve
= Rhc  −  or ∆E = Rhc
12
42  16 So, the equation becomes,

\ Wavelength of absorbed photon l is given by 1 1 1
= +
v u f
hc
∆E =
λ which is a straight line in the form y = mx – c
hc 15 16
\ = Rhc or λ=
λ 16 15R
16
or λ = m = 9.72 × 10−8 m
7
15 × 1.097 × 10
c 3 × 108
Frequency, ν = = = 3.09 × 1015 Hz.
λ 9.72 × 10−8

Or
23. Depletion layer: The small region in the vicinity of the
Let e, m and v be respectively the charge, mass and
junction which is depleted of free charge carrier and
velocity of the electron and r be the radius of the orbit.
has only immobile ions is called depletion layer.
v
Potential barrier: The accumulation of negative
Electron (e –) charges in p-region and positive charges in n-region
Nucleus r set up a potential difference across the junction, which
acts as a barrier and is called potential barrier.
+ Ze
In forward biased p-n junction:
(i) width of depletion layer decreases.
(ii)
value of potential barrier decreases.
Or When a small amount, say, a few parts per

According to the question, million (ppm) of a suitable impurity is added
to the pure semiconductor, the conductivity of
the semiconductor is increased manifold. Such
materials are known as extrinsic semiconductors
or impure semiconductors. The deliberate
addition of a desirable impurity is called doping
and the impurity atoms are called dopants. Such
a material is also called a doped semiconductor.
The dopant has to be such that it does not distort
RAB = 2 + 1 = 3W the original pure semiconductor lattice. It occupies
1 1 1 3 + 2 5 −1 only a very few of the original semiconductor
= + = = Ω ; atom sites in the crystal. A necessary condition to
R′ 2 3 6 6
attain this is that the sizes of the dopant and the
6 semiconductor atoms should be nearly the same.
R′ = Ω
5 There are two types of dopants used in doping
V 6 the tetravalent Si or Ge:
IEF = = = 5A (a) Pentavalent (valency 5); like Arsenic (As),
R′ 6 / 5
Antimony (Sb), Phosphorous (P), etc.
-
24. Given, l1 = 800 nm = 800 × 10 9m,
(b) Trivalent (valency 3); like Indium (In),
-
l2 = 600 nm = 600 × 10 9m, Boron (B), Aluminium (Al), etc.
D = 1.4 m, (ii) Arsenic is n-type impurity and Indium is p-type
d = 0.28 mm = 0.28 × 10 3m,
-
impurity.
Least distance of coincide y = ? Number of electrons, ne = nD - nA
Condition for coincide is = 5 × 1022 - 5 × 1020
= 4.95 × 1022 m-3
Dl1 Dl
nb1 = (n + 1)b2 ⇒ n = (n + 1) 2 ⇒ nl1 = (n + 1)l2 2
We know ni = nenh
d d
Given, ni = 1.5 × 1016 m-3
-9 -9
⇒ n × 800 × 10 = (n + 1) × 600 × 10
ni2 (1.5 × 1016 )2
⇒ n × 8 = 6n + 6 ⇒ n = 3 ⇒ Required least distance Number of holes, nh = =
4.95 × 1022ne
Dl1 -9
1.4 × 800 × 10 \ nh = 4.54 × 109 m-3
\ y = n β1 = 3 = 3×
d 0.28 × 10- 3 As ne > nh; so material is n-type semiconductor.

-3 27. Given, B = 100 T = 100 Wb/m2
3 × 1.4 × 8 × 10
= = 1.2 × 10- 2 m r = 10 cm = 0.1 m
2.8
25. Given, Magnetic flux
q1 = 0.2 mC = 0.2 × 10 C -6
f1 = BA = B × p r2 = 100 Wb m-2 × {3.14 × (0.1 m)2}
q2 = - 0.4 mC = - 0.4 × 10-6 C, F = - 0.4 N = 3.14 Wb.
As we know that force, On pulling the circular loop in square shape, the length
q1q2 of one side of the square,
F=
4πε0r 2 2πr 2 × 3.14 × 0.1 m
= = 0.157 m
4 4
q1q2
\ r2 = \ Area of the square = (0.157 m)2 = 0.02465 m2

4 πε0F

\ The magnetic flux linked with the square
0.2 × 10−6 × 0.4 × 10−6 × 9 × 109 f2 = 100 × 0.02465 = 2.465 Wb
=
0 .4 Now, change in magnetic flux
⇒
2
r = 1.8 × 10
-3 DfB = f2 - f1 = 2.465 - 3.14 = - 0.675 Wb
\ r = (1.8 × 10-3)1/2 This change takes place in 0.1 second.
= 0.0424 m = 42.4 × 10-3 m Hence, average induced emf
∆φB − 0.675 Wb
26. (i) E
xtrinsic Semiconductor: The conductivity ε=− =− = 6.75 V.
of an intrinsic semiconductor depends on its ∆t 0 .1 s

temperature, but at room temperature its
28. Transformer is a device which converts high voltage
conductivity is very low. As such, no important
AC into low voltage AC and vice-versa. It is based upon
electronic devices can be developed using these
semiconductors. Hence, there is a necessity of the principle of mutual induction. When a variable
improving their conductivity. This can be done by current is passed through one of the two inductively
making use of impurities. coupled coils, an induced emf is set up in other coil.
29. In first case when source of radiation is neon lamp.
l = 640.2 nm = 640.2 × 10-9 m, V0 = 0.54 V
From Einstein’s photoelectric equation
hc
AC eV=
0 -W …(1)
P S l
source
hc
\ e =
× 0.54 -W …(2)
640.2 × 10-9
Laminated cores
In second case when iron source is the source of

radiation, i.e., l′ = 427.2 nm = 427.2 × 10-9 m, let V0′

Working: When an alternating current is passed
be the new stopping potential, then Eq. (1) gives
through the primary coil, the magnetic flux through
the iron core changes, which does two things, hc
= eV0′ -W …(3)
produces emf in the primary coil and an induced 427.2 × 10-9
emf is set-up in the secondary coil. If we assume Subtracting Eq. (2) from Eq. (3), we get
that the resistance of primary coil is negligible, then
the back emf will be equal to the voltage applied to 1 1
e(V0′= - 0.54) hc -
9
the primary coil.
427.2 × 10 -
640.2 × 10-9
Energy Losses in a Transformer
hc 1 1
(a) Eddy current in iron core of transformer facilitate or V0′ - 0.54
= - × 109
the loss of energy in the form of heat. e 427.2 640.2
(b) Total fluxes linked with primary do not 6.63 × 10-34 × 3 × 108 640.2 - 427.2
completely pass through the= secondary which × 109
1.6 × 10 -19 427.2 × 640.2
denotes the loss in the flux or flux leakage.
(c) Due to heating, energy loss takes place in copper 12.43 × 10-7 × (213) × 109
= = 0.96V
wires of primary and secondary coils. 427.2 × 640.2
(d) The energy loss takes place in magnetising and \ V0′ = 0.96 + 0.54 = 1.5 V.
demagnetising the iron core over every cycle. Or
Or (i) Slope of the graph between V0 and v (from
Einstein’s equation) equals (h/e). Hence, it does
Here, Ev = 230 V; L = 5.0 H; C = 80 mF = 80 × 10 -6
F;
not depend on the nature of the material.
R = 40 W
(ii) Emitted electrons have greater energy for
(i) Resonant angular frequency is material M1. This is because f0 (=hv0) has a lower
1 1 value for material M1.
ωr = = = 50 rad s−1
LC 5.0 × 80 × 10−6
30. Postulates of Bohr model of Hydrogen atom:
2
Postulate-I: The electrons revolve in a circular orbit
2  1 
(ii) Circuit impedance, Z = R +  ωL − around the nucleus. The electrostatic force of attraction
 ωC 
between the positively charged nucleus and negatively
1 charged electrons provide necessary centripetal force
At ω = ωr , ωL = so that:
ωC for circular motion.
Z = R 2 = R = 40Ω
Postulate-II: The electrons can revolve only in certain

Amplitude of current at resonant frequency is selected orbits in which angular momentum of
h
E 2 Ev 2 × 230 electrons is equal to the integral multiple , where
I0 = 0 = = = 8.13 A 2p
Z R 40
h is Planck’s constant. These orbits are known as
E 230 stationary or permissible orbits. The electrons do not
Iv = v =
(iii) = 5.75 A
R 40 radiate energy while revolving in these orbits.
P.D. across L, VL = Iv × wrL = 5.75 × 50 × 5.0
Postulate-III: When an electrons jumps from higher
= 1437.5 V
energy orbit to lower energy orbit, energy is radiated
1 1
P.D. across C, VC = Iv × = 5.75 × in the form of a quantum or photon of energy hv,
ωr C 50 × 80 × 10−6 which is equal to the difference of the energies of the
= 1437.5 V electron in the two orbits.
P.D. across R, VR = IvR = 5.75 × 40 = 230 V
Expression for Bohr radius:
P.D. drop across L-C combination
From postulate-I,
 1  Centripetal force = Electrostatic force
= Iv  ωr L −  = I (0) = 0

 ωrC  v mv 2 1 e2

=
r 4 πε0 r 2
1 e 2 …(1) Also, the magnitude of force on charge at point B

\ v2 = due to charge at point D is
4 πε0 mr
From postulate-II, kQ 2 kQ 2
FBD
= =
nh ( 2a )2 2a 2
mvr =
2π
nh
or v=
2πmr
n 2h 2
or v2 = …(2)
4 π2m 2r 2
Comparing eqs. (1) and (2), we get
Let F is resultant of FBA and FBC.
1 e2 n 2h 2
=
4 πε0 mr 4 π2m 2r 2 kQq  kQq 
F
∴ = 2⋅  F=
BA F=
BC 
a 2  a2 
ε0n 2h 2

\ Bohr radius, r = ∴ The resultant electric force on charge Q is
πme 2
where, m = Mass of an electron, kQ 2 kQq kQ 2
Fnet =
F+ =2 +
r = Radius of the circular orbit in which, the electron is 2a 2 a2 2a 2
revolving,
kQ  Q
v = Speed of electron and =  2q +  N
2
a  2
e = Charge of electron
(b) The potential energy of the system is given by
T!p U = UAB + UBC + UCD + UDA + UAC + UBD
The students should carefully revise the relationship
between the different variables in case of Bohr’s kQq kQq kQq kQq kq 2 kQ 2
= + + + + +
postulates. a a a a 2a 2a
  kQq  kq 2 kQ 2 
31. (i) Required work done = - potential energy of the = 4  + + 
system   a  2a 2a 

1  q1q2 q2q3 q3q1  Or
W= -  + + 
4 pε0  r12 r23 r31 
(i)
Capacitor: It is an arrangement required to increase
1  q( -4q ) ( -4q )(2q ) q (2q )  the capacity of a conductor so
= -  + + 
4 pε0  a a a  that a large amount of charge
can be stored in it without
1  4q 8q2 2
2q 
2
1 10q 2 changing its dimensions.
⇒ W=- - - + = +
4 pε0  a a a  4 pε0 a
Capacitance of parallel plate
  E
-10 2
capacitor: Let us consider a
10×(1.6× 10 )
⇒ 9 109 ×
W =× 2.304 × 10-8 J
= parallel plate capacitor filled
-2
10× 10 with a medium of dielectric
(ii) (a) Force acting on charge Q placed at point B, is constant K as shown in the
due to charges placed at points A, C and D. fig. Electric field between the
plates
σ Q
= E =
ε0 K ε0KA

⇒ Potential difference between the plates
Qd
V E=
= d
ε0 KA

Q Q ε A
Here, magnitude of force on charge at point B due to ⇒ C= = = K 0
V Qd d
kQq
charge at point A is FBA = ε0KA
a2
Similarly, magnitude of force on charge at point B If air is as the medium between the plates then, K = 1
kQq
due to charge at point C is FBC = ε0 A
a2 ⇒ C0 =
d
(ii) Gauss’s law states that the total electric flux linked E1
r1
1
through a closed surface is equal to times the
ε0
net charge enclosed by the surface. Mathematically,
q
φ = enclosed E2 r2
ε0
E 1r2 + E 2r1
E eq =

Proof: Consider a small area r1 + r2

element dS around a point
‘O’ on the surface. 1.5 × 0.3 + 2.0 × 0.2 0.85
= = = 1.7 V
B 0.2 + 0.3 0.5
Flux through area dS, →
dS
→ → r1 r2 0.2 × 0.3
d φ = E . dS = E.dS = req =
E q θ r1 + r2 0.2 + 0.3

1 q A
= dS O 0.06
4 πε0 r 2 = = 0.12 Ω
0.5

Total flux = φE = ∫ E ⋅ dS
Or
(i) Consider the given figure,
= E ∫ dS
I 3Ω E I
F D
q q 2
=
4 pε0r
∫ dS = EA =
2
4 πε0r 2
× 4 πr
1V
R1
R
q 2Ω
φE = 3V
ε0 I
I
C
A B I
32. (i) Applying junction rule to O 6V 4V
Applying Kirchhoff's second law in mesh AFEBA,

-I 1 - I 2 - I 3 =0

2 I - 1 + 3 I- 6 = 0
I1 + I2 + I3 =
0 ...(1) (since, no current flows in the arm BE of the circuit)
i.e.,
5 I= 7
Let V0 be the potential at point O. By Ohm’s law for 7
⇒ I= A ...(1)
resistances R1, R2, and R3 respectively, we get 5
A Applying Kirchhoff's second law in mesh AFDCA,
I1 3I + RI - 4 - 6 + 2I - 1 = 0
R1
5I + RI = 11...(2)
R2 Now, substitute the value of I from eq. (1) to eq. (2),
O R3
I2 we get
I3 C
B 7 7 7R
5× + R × = 11 ⇒ 7 + = 11
(V0 - V 5 5 5

=1 ) I 1R1 ; (V0 - V
=2 ) I 2R2
7R 20
(V0 - V3 ) =
I 3R3 ⇒ =4⇒R = Ω
and 5 7
(V0 - V1 ) (V0 - V2 ) (V0 - V3 ) For potential difference across A and D, along AFD,
=
Or I1 = ; I2 = ; I3
R1 R2 R3 7 7 14 21
VA − × 2 + 1 − 3 × = VD ⇒ VA − + 1 − = VD
5 5 5 5
So, substituting these values of I 1 ,I 2 and I 3 in eq. (1),
14 21
⇒ VA − VD = + − 1 ⇒ (VA − VD ) = 7 − 1 = 6V
we get 5 5
(ii) Here, the potential V = constant, l ' = 3l
 1 1 1  V1 V2 V3 
V0  + + - + + =0 V
 R1 R2 R3   R1 R2 R3  (a) Drift speed of electrons =

nelρ
-1 Where, n is number of electrons, e is charge on

V V V  1 1 1  electron, l is the length of the conductor and e
V0 =  1 + 2 + 3   + + 
 R1 R2 R3   R1 R2 R3  is the resistivity of conductor.

(ii) Given, E1 = 1.5 V, E2 = 2.0 V, r1 = 0.2 W, r2 = 0.3 W, Eeq = ? and 1 ∵
V∝ ( other factors are constants)
req = ? l
So, when length is tripled, drift velocity gets Dl

x =m , m = 0, 1, 2
one-third. d
(b) Resistance of the conductor is given as
Where, m = 0 corresponds to the central maximum.
R = ρ (l / A)
xd
l=
Here, wire is stretched to triple its length, that mD
means the mass of the wire remains same in
(10-3 m) × (2 × 10-3 m)
both the conditions. For m = 1, l 1 =
1 × (2.5m)
∴ Mass before stretching = Mass after

stretching (Volume × Density) before stretching = 8 × 10-7 m
= (Volume × Density ) after stretching = 8000 Å (infrared)
(Area of cross-section × Length) before 8000Å
For m = 2, l 2 =
stretching = (Area of cross-section × Length) 2
after stretching = 4000 Å (visible)
( ∵ Density is same in both cases) 8000Å
For m = 3, l 3 =
A1l1 = A2l2 ⇒ A1 l = A2 (3l ) 3
∴
( ∵ length is tripled after stretching) = 2666 Å (ultraviolet)
∴ A2 = A1 / 3 8000Å
For m = 4, l 4 =
4
i.e., when length is tripled, area of cross-section
= 2000 Å (ultraviolet)
is reduced to A / 3.
l' 3l l Or
Hence, R=ρ = ρ 9
=ρ 9R
= When plane wavefront coming from distant source
A' A/3 A
illuminates the slit of size (= d ), each other point
Thus, new resistance will be 9 times of its
within the slit becomes the source of secondary

original value.
wavelets and these wavelets superpose on each
33. (i) Interference of Light Waves: When two light waves other to generate the maxima and minima on the
of same frequency travel simultaneously in the screen; path difference between the rays, directing
same direction then, due to their superposition, to the point P on the screen can be given as :
the resultant intensity of light at any point in space
is different from the sum of intensities of the two
waves. At some points the resultant intensity
is maximum while at some other points it is
minimum (nearly darkness). The re-distribution of

light intensity due to the super position of two light
waves is called interference of light.
The interference is said to be 'constructive' at points

In ∆ABT
where the resultant intensity is maximum and
BT D
'destructive' at points where the resultant intensity sin=
q =
AB a
is minimum of zero.
L M N Path difference, ∆ = a sin q
B
Condition of Minima: If slit AB is divided into the
D equal halves (or in even parts) each of size d/2, for
S1
every point in part AM, there is a point in part MB
S B that contribute the secondary wavelets out of phase
(i.e., 180°). So, net contribution from two halves
S2
D becomes zero and hence intensity falls to zero for
path difference
B ∆ = nl
∴ a sin θ = nl
T! P where, n is integer except n = 0.
Phase difference for destructive interference is odd Condition of Maxima: If slit AB is divided into three
[i.e., (2n + 1) p] and for constructive interference is equal parts (or in odd parts). First two-third of the
even [i.e., 2pn]. slit having a path difference λ/2 between them
cancel each other, and only the remaining one-third
(ii) The distance of bright fringes from the central of the slit contributes to the intensity at the point
maximum on the screen is given by between two minima, so for path difference
 1 Dl
D=  n +  l y1 =
 2  a

 1 2D l ...(4)
We have, a sin =
q n +  l Therefore, β0 =
2 a

It follows that β0 = 2β i.e., the central maxima is
where, n is integer except n = 0
twice as wide as any other secondary maxima or
minima.
!
34. (i) Violet colour suffers greatest dispersion because

less is the wavelength, more is the dispersion.
(ii) It gets reflected from second and third surface
and emerges from the first surface.

The wavelets from points A and B will have a path δ − δ 53 − 51 1

Dispersive power = b r =
(iii) = = 0.0385
difference equal to BN. δy 52 26
From the right-angled ∆ANB, we have
BN = AB sin q Or
or BN = a sin q (iv) (b) 45°,
Suppose that the point P on the screen is at such a Given, A = 60°, m = 2
distance from the centre of the screen that BN = l
and the angle θ = q1.  A + δm 
sin  
λ = a sin q1  2 

µ=  
l ⇒ A
or sin q1 = sin
a 2
Such a point on the screen will be the position of
first secondary minimum.  60° + δm 
sin  
For nth minimum at point P,  2 
⇒ 2=
nl 60°
sin qn = ...(1) sin
a 2
If yn is the distance of the nth minimum from the  60° + δm  1
centre of the screen and D is the distance between ⇒ sin  =
 2  2
the slit and the screen, then from right-angled  
∆COP, we have
60° + δm
OP ⇒ = 45°
tan qn = 2
CO
y δm = 90° − 60° = 30° and δm = 2i − A
or tan qn = n ... (2)
D
30° = 2i - 60°
In case qn is small
sin qn = tan qn i = 45°
Therefore, from the eqs. (1) and (2), we have µ0nI (4 π × 10−7 ) × 800 × 1.6
yn nl 35. (i) As B= = = 8 × 10−4 T
= 2 2
D a (ii) Magnetic field lines at the centre of the solenoid
nlD ...(3) are straight lines as magnetic field inside a
or yn =
a solenoid is uniform.
The width of the secondary maxima, (iii) Magnetic field inside a long solenoid with an iron
= yn - yn - 1
β core inside it is B = mnI
But m = m0(1 + c)
nD l (n - 1)D l Dl ∴ B = m0(1 +c)nI
= - =
a a a Or
Since β is independent of n, all the secondary A solenoid of length l and having n turns carries a
maxima are of same width β. The central maxima current I in anticlockwise direction. The magnetic
extends upto the distance y1 (the distance of first m0nI
secondary minima) on both sides of the centre of field as . Its direction will be along the axis
l
the screen.
Therefore, the width of the central maxima, b0 = 2y1 of solenoid.
From eq. (3) setting n = 1, we have 

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nswers

spheres only. l = 600 nm and D = 1 m

4. (c) The rate of heating As V = VR2 + (VL − VC )2

1 Here, φ is magnetic flux linked with the coil and

so energy of n = 1, energy level = 13.54 eV λ

4. (a) 6.28 × 10-5 V 1 q

Here, mr = 500 2pKZe 2

25. An electric dipole whose size is very small or negligible

Derivation: To explain the Ampere’s circuital law

Let B be the magnetic at any point inside the

2 2 Note that over 80% of the power is wasted as

(i) The equipotential surfaces are plane parallel to I2 E2 I2

X – Y plane. As the field is increasing in magnitude,

5 the phase difference due to the path difference

Now, due to refraction at two different boundaries,

6 4 Energy band diagram of conductors

T!p (ii) Concave lens, because refracted ray is bending

20. We know that, 3

amadhaan PHYSICS Class XII | 27

25. 27. Given, B = 100 T = 100 Wb/m2

2πr 2 × 3.14 × 0.1 m 1 1

This change takes place in 0.1 second. φ

Kirchhoff’s Second Law: In any closed mesh of

Hence, a = 30° (with side AC ) r

away where S 2Q - S 1Q = lb =

∴ Resistance, V= 0.7 Valence

! (iii) Wavefront is the locus of all points, where the

secondary waves. volt × second

19.  The positive charge on the nucleus is Ze, where Z is the

Or When a small amount, say, a few parts per

radiation, i.e., l′ = 427.2 nm = 427.2 × 10-9 m, let V0′

1 e 2 …(1) Also, the magnitude of force on charge at point B

Applying Kirchhoff's second law in mesh AFEBA,

So, when length is tripled, drift velocity gets Dl

minimum (nearly darkness). The re-distribution of

The interference is said to be 'constructive' at points

34. (i) Violet colour suffers greatest dispersion because

The wavelets from points A and B will have a path δ − δ 53 − 51 1

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(i) The equipotential surfaces are plane parallel to I2 E2 I2

T!p (ii) Concave lens, because refracted ray is bending

20. We know that, 3

19. The positive charge on the nucleus is Ze, where Z is the

1 e 2 …(1) Also, the magnitude of force on charge at point B

34. (i) Violet colour suffers greatest dispersion because