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10MHz High-Power Pulse Generator On

This document describes a high-power pulse generator that can output 10MHz pulses. It uses a Blumlein pulse forming line combined with a boost method to improve the pulse voltage amplitude and energy conversion efficiency. A prototype was able to achieve a 5ns pulse width at a maximum repetition rate of 10MHz with a 2.5kW peak power. The generator uses RF-Si-MOSFET switches controlled by dual-switch timing logic to adjust the output waveform and achieve a repetition rate twice the switching frequency.
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0% found this document useful (0 votes)
43 views10 pages

10MHz High-Power Pulse Generator On

This document describes a high-power pulse generator that can output 10MHz pulses. It uses a Blumlein pulse forming line combined with a boost method to improve the pulse voltage amplitude and energy conversion efficiency. A prototype was able to achieve a 5ns pulse width at a maximum repetition rate of 10MHz with a 2.5kW peak power. The generator uses RF-Si-MOSFET switches controlled by dual-switch timing logic to adjust the output waveform and achieve a repetition rate twice the switching frequency.
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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This article has been accepted for publication in a future issue of this journal, but has not been

fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/TIE.2020.2994860, IEEE
Transactions on Industrial Electronics
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

10MHz High-Power Pulse Generator on


Boost Module
Yingjiang He, Jianhao Ma, Student Member, IEEE, Liang Yu, Member, IEEE, Shoulong Dong,
Member, IEEE, Liangxi Gao, Weirong Zeng, and Chenguo Yao, Member, IEEE

cavity[10]-[11]. For the typical petal accelerator, the electron


Abstract—Nanosecond pulse output at MHz level is gun usually needs to generate electron beam pulses with a
widely concerned, because of its potential application in repetition frequency of several MHz. And each electron beam
the experiment of cell function electric field regulation and pulse width is several nanoseconds, thereby reducing the
accelerator electron gun injector. In this paper, a pulse
generator based on the combination of the Blumlein pulse
electron beam energy divergence and beam loss in the
forming line and the boost method is proposed. Different accelerator [12]. In order to ensure the beam quality,
from the traditional Blumlein line, In this module, RLC simultaneously meeting the rapid rising/falling time of the
circuit is used to improve the pulse voltage amplitude and pulse, a few nanosecond pulse width with the certain flat top
energy conversion efficiency. According to the different and the high repetition frequency are the basic requirements for
inductance values, the generator has two working modes: the electron gun grid controlled pulse source.
discontinuous and continuous with different output
characteristics. RF-Si-MOSFET is used as the main switch,
Conventional pulse generator primarily use gas switch,
and use dual-switch timing logic control to adjust the although it can output higher power single pulse, the repetition
output waveform parameters. It can obtain the output pulse frequency is limited due to the long gap recovery time [13].
frequency 2 times the switching frequency, effectively Based on the development of semiconductor device, many
reducing the single switching loss. By constructing a scholars have begun to research solid-state pulse generator with
prototype, the pulse width of 5 ns, maximum repetition of higher repetition rate. Solid-state high-power pulse generator
10 MHz and 2.5kW peak power is realized. In addition, a DC
equivalent pulse method is proposed which is suitable for
mainly include Marx , pulse forming line , linear transformer
the thermal simulation of switching at high frequency and drive (LTD) source and DC-DC module or MMC module for
gives the heat dissipation measures. The effectiveness is superimposed output [14]-[19]. The essence of the pulse
verified by simulation and experiment. generator is the charging and discharging process of the
capacitor. In addition to the pulse forming line, although the
Index Terms—Nanosecond pulse, Blumlein pulse above-mentioned circuit topology can generate flexible pulse
forming line, Power conversion module, Heat dissipation. waveform by controlling the semiconductor switch, its shortest
pulse width is limited by the switch driving capability [20]-[21].
I. INTRODUCTION
Some scholars use magnetic compression systems to compress

H IGH-FREQUENCY nanosecond short pulse have a wide


range of applications in experimental research on
biological cell [1-2], ultrasound pulse application [3-4],
primary pulses in time and space to obtain high-voltage pulse
with higher power and shorter pulse width [22]. But the core
saturation problem limits its operating frequency. So it’s
Pockels photoelectric switch driver [5-6], UWB radiation difficult to meet the requirements of high repetition rate and
source [7] and pulsed electron gun [8-9]. Compared with the short pulse width at the same time. The pulse width formed by
linear accelerator, the pulsed electron gun uses the pulsed the transmission line is only determined by the line length, so
power source as a grid regulator to better solve the collision the pulse width has the possibility of reaching a few
problem of the electron beam in the acceleration nanoseconds. But the disadvantage of pulse forming line to
generate the pulse is low voltage conversion efficiency [23].
Manuscript received January 20, 2020; revised March 16, 2020; Stefania Romeo et al. developed a nanosecond pulse generator
accepted May 4, 2020. This work was supported by the National Natural consisting of the microstrip transmission line with a pulse width
Science Foundation of China under Grant 51907011, the Fund Project
of Chongqing under Grant cstc2019jcyj-msxm0368, the Fundamental of 10 ns, but the pulse voltage peak is only 830V when
scientific research business of central universities under Grant charging voltage is 1kV [24]. Some scholars have used
2019CDXYDQ0010 and the Postdoctoral fund project of Chongqing avalanche transistors as the main switch for Blumlein line pulse
under Grant XmT2018012.
Yingjiang He, Jianhao Ma, Liang Yu, Shoulong Dong, Liangxi Gao, generator. It can output the square wave with a repetitive
Weirong Zeng and Chenguo Yao are with the State Key Laboratory of frequency of 4.5 kHz, a pulse width of 10 ns and an amplitude
Power Transmission Equipment & System Security and New of 1.7 kV, but its charging voltage requires 2kV[25]. Recently,
Technology, Chongqing University, Chongqing Technology Innovation
Center for Pulse Power & Bioelectrics, Chongqing 400044, China.
some scholars have proposed the inductive energy storage
(e-mail: [email protected], [email protected], Blumlein with higher energy density [26]. Its advantage is that
[email protected], [email protected], [email protected], it can reduce the need for DC charging voltage. However, in
[email protected], [email protected], ).

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this method, the response time of the inductor current in the i(t) RC Lm D
transmission line is several microseconds and the switch RL
+
withstands the current of tens of amps, which limits the DC Udc C1 C2
repetition frequency of the generator. - S
Traditional Blumlein forming line pulse generator is RC
charging. According to the charging principle of the RC and the
(a)
loss of the circuit's own stray parameters, the storage voltage on
+ URC - + UL - D
the equivalent capacitance C of the transmission line is smaller
than the charging voltage. And under high-frequency condition, RC Lm RL
+ + +
the charging speed of RC can’t keep up with the frequency DC Udc UC1 UC2
- - -
response, it greatly reduces the output efficiency of the pulse S C1 C2
voltage. The Blumlein pulse forming line based on the boost
module composed of RLC circuit is proposed in this paper. The
selection of the inductance values makes the generator work in
+ URC - + UL - D
continuous or discontinuous mode. The two modes have
different output characteristics and can both play the boost role + RC Lm + RL
at high frequency. The RF-Si-MOSFET is used as the main DC Udc Uc
- -
S C1+C2
switch which makes the switch have a fast leading edge. It can
generate the square wave with a pulse width of 5 ns. And a
dual-switch timing logic control is proposed to achieve the (b)
pulse output at twice the switching frequency, which can Fig. 2. Equivalent circuit schematic diagram (a) Inductive energy
effectively reduce the single switching loss. In this paper, the storage when switch is turned on, (b) RLC underdamped overshoot
charging for transmission line when switch is turned off.
switch thermal resistance model is built and the switch is forced
to air cooling. Comsol thermal finite element simulation of the Step 1: 0<t<t1(=ton)
switch under high-frequency condition using the DC equivalent This mode is the first-order time domain circuit in which the
pulse method, and its effectiveness is verified by experimental DC power source charges the inductor Lm through a charging
test. So the pulse generator can operate reliably at the highest resistor Rc. Its current expression is as follows:
repetition frequency of 10MHz. t
U
i(t )  dc (1  e Lm / Rc ) (1)
II. PULSE GENERATOR WORKING PRINCIPLE Rc
A. Boost principle: Step 2: t1<t<t2
According to KVL, the following relationship can be
Figure 1 shows the circuit topology with only single-switch
obtained:
operation with no frequency multiplier output capability. The
dU C2
working process of the generator is mainly divided into U C1  RL C2  U C2 (2)
inductive energy storage when the switch is turned on and RLC dt
underdamped overshoot charging when the switch is turned off. dUC1 d 2UC2 dUC2
The equivalent circuit is shown in Figure 2. C2  RLC22  C2 (3)
RC Lm D T1 RL T2
dt dt dt
S1 S2 dU C1 dU C2 d 2U C1 d 2U C2
(C2 +C2 ) RC  Lm (C2 +C2 )  U C1  U dc
DC
Open
dt dt dt dt
Cm Pulse forming
Module (4)
From the above two formulas:
Boost Module U dc ( s ) 1
=
U C2 ( s ) LmC22 RL s3  (2 LmC2  RC RLC22 ) s 2  (2 RC C2  RLC22 ) s  1
Fig. 1. The single switch circuit mode. (5)
This circuit is a third-order time-domain system containing
Cm is the voltage stabilizing capacitor, Rc is the charging three state variables, Lm, C1, and C2(C1 =C2 ). In fact, the
resistor, Lm is the inductor, S1 and S2 are the MOSFET, RL is the equivalent capacitance in the transmission line is actually pF
load resistance, T1 and T2 refer to the two transmission lines in level. So in order to simplify the calculation, the approximate
the Blumlein structure. and reduced order methods are used. The above formula can be
The waveforms of the switch drive voltage Vg, inductor approximately equivalent to:
current IL and capacitor voltage Uc when the generator is
operating are shown in Figure 3. Take the discontinuous mode Udc (s) 1
 2 (6)
as an example: UC2 (s) 2LmC2s  2RCC2s 1
The influence of RL can be ignored in this process. C1 and C2
are combined in parallel as C = C1 + C2. Although this

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equivalence causes minor deviation, it is within the acceptable Due to the inductance increased, more energy is stored. After
range. the inductor current is dynamically balanced, capacitor C in
When R c < 2 L m / C , The expression of UC is as follows: transmission line gets higher gain. However, in the early

Rc
t
balance process, the Uc in the first few cycles is low.
UC U (1 
1 R
e 2 L m s in ( ( c ) 2 
1
t   )) (7)
dc
s in  2 Lm Lm C B. Frequency multiplier output mode:
T1 T2
The β is the initial phase angle of the voltage, and its RC Lm D RL

expression can be calculated according to the initial condition IL IS1 IS2 U2


S1 S2
it=0= i0 as follows: DC
U1 Open
R
C c U dc  i0 Cm
VS1 VS2
2 Lm
  arctg (8)
R 1
CU dc ( c ) 2 
2 Lm LmC
Fig. 4. Double switch circuit mode.
For calculation convenience, define related parameters:
Rc 2 1 The high repetition rate of pulsed power technology is
  Lm / Rc ,   ( )  (9)
2 Lm Lm C primarily limited by semiconductor switching performance.
This paper proposes a dual-switch timing logical control, it
It can get the current expression:
1 realizes the pulse output of 2 times the switching frequency.
CU dc  2 t 1 The working circuit is shown in Figure 4.
i (t )  e [ sin( t   )   cos( t   )] (10)
sin  2 In order to make the nanosecond pulse generator have
Step 3: t2<t<t3(=T) frequency multiplier output capability, it is necessary to
Due to the reverse turn-off effect of diode D, the current coordinate the control timing of the switches S1 and S2. The
i(t)=0. The equivalent capacitance C of the transmission line timing chart is shown in Figure 5. VS1 and VS2 are switch
with the initial voltage U0 is discharged through the switch-off driving voltage signals, URL is the output pulse voltage of the
resistor Roff, and its expression is as follows: load, T is the switching period, td is the switch turn-on delay
t t time, tr is the switch turn-on time and τ is the wave propagation
UC  U 0e
Roff C
 U dc (1  e ) (11)
Roff C time of the single transmission line.
VS1
Continuous mode and discontinuous mode are determined
by the inductor current. In the discontinuous mode, although
the gain of the pulse voltage is small, the pulse voltage
amplitude remains stable. In the continuous mode, because the
current cannot return to zero when the switch is turned off, T
there are only the step 1 and step 2 in discontinuous mode. VS2

Suppose that in is the current at the end of the nth period, and is
also the initial current of the n + 1th period. When the following
formula is satisfied, the inductor current reaches
balance.(in=in+1)
T/2 T
1
CU dc  2 toff 1 URL
in  e [ sin(toff   )   cos(toff   )]
sin  2 2τ 2τ 2τ 2τ

1 U (12)
C U dc  (in  dc (1  eton / )
2 Rc
toff  T  ton ,   arctg td+tr+τ td+tr+τ td+tr+τ td+tr+τ
CU dc T/2
Fig. 5. The dual-switch timing logical control and load waveform.
Vg Vg
First, the transmission line is charged when both switches are
turned off. After the charging is completed, the switch S1 is
0 0 turned on, and the transmission line generates the pulse with the
t t first discharge. The wave process is shown in Figure 6.
IL IL
(1) After the switch is turned on, the capacitor in the
transmission line begins to discharge. When 0 < t < l / v, the
0 t1 t2 t3 0 t1 t2 voltage incident wave Uλ1 = -U0 at point A. l is the length of
t t
Uc Uc each transmission line.
(2) When t=l/v, the voltage incident wave Uλ1 reaches the
load, the part of the reflection occurs, the reflected wave Uf1 is
0 t 0 t inverted, and the part continues to be incident, becoming Uλ2.
Its value can be calculated by Peterson equivalent circuit, and
(a) (b)
Fig. 3. (a) Disontinuous mode, (b) Continuous mode

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its relationship is as follows:(Z is the transmission line wave inductor current can return to zero in one cycle. The expression
resistance, RL=2Z) is as follows:
Z 1 1
U  2  2U 0   U0 (13) t on  a (16)
2 Z  RL 2 f
U R L  U  2 R L / Z  U 0 (14) 1
sin(t z   )   cos(t z   )  0 (17)
1 2
U f 1 =U 1 +U  2 -U RL =  U 0 (15) t z  ton  1 / f
2
(3) When t=2l/v, the reflected wave Uf1 and reaches the arctg 2   1 (18)
 (1  a )
short-circuit point A to form the opposite reflected wave  f
Uf3=1/2 U0. And the incident wave Uλ2 reaches the open point B Where a is the duty cycle, tz is the return time of the inductor
to form the same reflected wave Uf2 =-1/2 U0. current to zero, and f is the repetition frequency.
(4) When t=3l/v, the reflected wave Uf2 and Uf3 reach the (2) Charging resistor Rc
load, the transmission line voltage and the load voltage become The equivalent capacitance C of the transmission line is
0, and the discharge process is completed. A pulse having an determined by its material and length. On the basis of
amplitude of U0 and a pulse width of 2 l/v is formed.
A B R c < 2 L m / C , In order to fully improve the output pulse
U=U0 RL t=0 voltage amplitude and energy conversion efficiency, the time
A U入1' B tdc when the voltage UC of the equivalent capacitor C rises to
U入1'=-U0
RL Udc should be during switch off time.
0<t<L/v
1
A U入2' B tdc  (1  a ) (19)
U入2'=-1/2U0 f
RL
Uf1'=-1/2U0
Uf1' L/v<t<2L/v t
A Uf2' B 1  2dc
Uf3'=1/2U0 RL
Uf2'=-1/2U0 e sin(tdc   )  0 (20)
Uf3' 2L/v<t<3L/v sin 
U=0 A RL
B
t=3L/v  1

 (1  a ) (21)
Fig. 6. Schematic diagram of the wave process when the switch S1 is  f
closed.
(3) Voltage regulator capacitor Cm
Then S1 is turned off for a second charge in a cycle. Then the The function of the voltage stabilizing capacitor is to ensure
switch S2 is turned on, S1 is kept off, the transmission line that the output pulse voltage amplitude remains relatively
generates the wave process again so that the load outputs the stable. However, as shown in Figure 8, when the switch is
pulse. turned on, the regulator capacitor Cm will discharge through the
The frequency multiplier output mode makes use of the fact Rc and Lm. Although the DC power supply constantly charges,
that when the two switches are turned off at the same time in a its charging speed is related to the charging rate of the DC
cycle, it provides sufficient time to charge the transmission line power supply itself. The charging rate of the voltage stabilizing
capacitor by RLC circuit. Two charges and two discharges are capacitor Cm is often lower than the discharging rate under high
formed in one switching cycle. repetition frequency condition. Due to the loss of charge, it will
The design structure of the pulse generator is shown in cause a certain voltage drop in the pulse string. In order to
Figure 7. First, the switch drive signal is isolated by the reduce the voltage drop, so it needs to choose the capacitor with
photoelectric conversion circuit, and the two signals a larger capacitance as the voltage regulator.
respectively control the two switches. The DC power supply is + URC - + UL - D
used to charge the transmission line in the main circuit.
+ RC Lm RL
Solid-state Cm Um
switche1 - C1+C2
Control
S
Signal Electro-optical- Blumlein Pulse
Load
source electro conversion
Solid-state
switche2
Fig. 8. The regulated capacitor discharge circuit.

HV DC Charge
source
In order to fully retain the calculation margin, the charging of
the stabilizing capacitor by the DC power source is not
Fig. 7. The design structure of pulse generator. considered. Also according to the second-order circuit time
domain analysis, the discharge voltage um(t) expression of the
C. Main parameter selection: voltage stabilizing capacitor Cm in the first period is:
(1) Inductor Lm U dc
um (t)  ( p2e p1t  p1e p2t )
The size of the inductor Lm determines whether the p2  p1
generator works in continuous mode or discontinuous mode. (22)
R R 1
The critical condition for working in discontinuous mode is the p1, p2   c  ( c ) 2 
2 Lm 2 Lm LmCm

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To facilitate calculations, it can get the following


Symbol Value
mathematical expression:
U dc DC input voltage Udc=350V/250V
( p2e p1t  p1e p2t )  U dc e p1t (23) Pulse output maximum voltage amplitude Umax=500V
p2  p1
Pulse repetition frequency f = 10MHz
Assuming the amplitude of the first pulse does not exceed the Switch S1 operating frequency and delay time f1=5MHz,td=20ns
amplitude of the nth pulse by more than ΔU, and then according Switch S2 operating frequency and delay time f2=5MHz,td=120ns
to the expression of the maximum value of the pulse output Transmission line equivalent capacitance C=40pF
voltage described above, the following relationship is obtained: Transmission line equivalent inductance L=100nH
Transmission line delay time τ=2.5ns
U
Udc (1  e(n1) p1ton )  (24)
Charging resistor
Resonant inductor
RC=50Ω
Lm=0.5µH/5µH
M
Voltage regulator capacitor Cm=100µF
t
1  2on Load Resistance RL=100Ω
M  1 e sin(ton   ) (25)
sin  As shown in Figure 4 above, the figure 9(a) shows the
Finally, the value of the voltage regulator Cm is: simulation waveforms of the drive control signals VS1 and VS2
1 (26) of the switches S1 and S2, and the switch on-time are all set to
Cm 
Rc 2 R In (1   U / U dc M ) 2 40ns. Figure 9(b) is the simulation waveforms of the
Lm ( ( c  ) ) transmission line capacitor charging voltage U1 and the pulse
4 Lm 2 2 Lm ( n  1)ton
output voltage U2 in the discontinuous mode where the DC
Where ton is the switch on-time and M is the multiple of the
voltage Udc is 350V and the inductance Lm is 0.5 µH. Figure
voltage UC to Udc at the moment of ton.
9(c) is the simulation waveform of the inductor current IL in the
discontinuous mode. Figure 9(d) is the simulation waveforms
III. PULSE GENERATOR SIMULATION ANALYSIS of the transmission line capacitor charging voltage U1 and the
The PSpice circuit model is built for simulation. The coaxial pulse output voltage U2 in the continuous mode where the DC
transmission line in the simulation circuit is replaced by a voltage Udc is 250V and the inductance Lm is 5 µH. Figure 9(c)
distributed parameter model consisting inductor and capacitor. is the simulation waveform of the inductor current IL in the
The parameters related to the simulation circuit model are given continuous mode. After the pulse is output within a period, a
in Table 1. small negative peak appears, which is because some energy
TABLE I stored in the transmission line inductor will discharge the load
SIMULATION PARAMETER SELECTION
resistance when the switch is turned off.
18 600 V1 8
S1
V2
16 S2
500 7
14 6
400
12 5
Voltage/V

Voltage/V

Current/A

10 300 4
8 200 3
6 2
100
4 1
0
2 0
0 -100 -1
0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000
Time/ns Time/ns Time/ns
(a) (b) (c)

600 5 10
V1 IS1
V2 IS2
500 4
8
400
3
Current/A
Voltage/V

Current/A

300 6
2
200
4
1
100
2
0 0

-100 -1 0
0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000
Time/ns Time/ns Time/ns
(d) (e) (f)
Fig. 9. Simulation of current and voltage waveforms of the pulse generator(10MHz repetition rate). (a) Drive signals VS1 and VS2 for switches S1 and
S2. (b) Voltage U1 of equivalent capacitor C in transmission line and pulse output voltage U2 in discontinuous mode. (c) Inductive current IL in
discontinuous mode. (d) Voltage U1 of equivalent capacitor C in transmission line and pulse output voltage U2 in continuous mode. (e) Inductive
current IL in continuous mode. (f) Current IS1 flows through S1, Current IS2 flows through S2

It can be seen that the pulse voltage gain is lower in the Figure 9(f) shows the simulation waveforms of current IS1
discontinuous mode, but after removing the pulse generated and IS2 of the switches S1 and S2 in the discontinuous mode. It
when the first switching cycle is closed, subsequent pulses all can be seen from the figure that the front end of the switching
reach a stable value. In continuous mode, the pulse voltage gain current is formed by the discharge of the transmission line
is higher, but there is an obvious early transition process. when the switch is turned on.

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Transactions on Industrial Electronics
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IV. PULSE GENERATOR DESIGN AND EXPERIMENT heat. And compared to the large heat sink, this heat sink is
lighter.
A. Pulse generator design
(1) Switch drive design
In order to ensure the quality of the pulse waveform, the
square wave nanosecond pulse generally requires the rising
edge time Tr ≤ one-half of the FWHM .So the rising edge time
of the pulse should be controlled below 2.5 ns in this paper.
This requires that the switching speed of the generator should
be fast enough. In this paper, the switch drive circuit is
designed as shown in Figure 10.
Vcc HV

Q1 C1
Cg M1 R1
Water in Water out
Vg Snubber
Rg S1
Fig. 11. Heat sink diagram.
Q2

(3) Main parts of the circuit design


GND
The main device parameters of the pulse generator are shown
Fig. 10. Switch drive circuit. in Table 2. The nanosecond pulse generator is mainly
composed of a switch drive circuit and a pulse forming main
Cg in the figure 10 is the storage capacitor in the driver circuit. circuit. In order to reduce the spurious signal interference of the
In order to ensure that Cg effectively drives the MOSFET, main circuit and the driving circuit, and realize high and low
considering the voltage ripple across the MOSFET, the formula voltage isolation, the photoelectric conversion circuit is used. It
for selecting Cg is as follows: performs an electro-optical-photoelectric conversion of the
Qg  Vmax TTL signal generated by the signal generator, and then sent to
Cg≥ (27)
 v  (2  Vmax   v ) the switching gate stage to effectively drive the switch.
TABLE II
In the formula, Qg is the gate charge of the MOSFET, and MAIN COMPONENTS OF THE GENERATOR
Vmax is the highest driving voltage that the switch can withstand.
△v is the voltage drop, it is generally 1% Vmax. Device Main parameters
R1 and C1 are connected in series to form a snubber circuit to DC power supply(DW-P102-5000ACC2) Udc=1000V, Id=5A
minimize the oscillation of the switch when it is turned on RF-Si-MOSFET(IXZ631DF12N100) VDSS=1000V, IDM=72A
quickly. Rc(ZMP) 50Ω, P=800W
(2) Charging resistor heat dissipation design RL(WTDS150) 100Ω, P=150W
In this pulse generator, the main caloric value is derived from Cm(MLC-LM) 800V, 50µF
the Joule heat of the charging resistor and the high frequency Coaxial(RG174/U) Z=50Ω
Fiber optic transceiver(FT/R50MHIR) 50Mbd
heat loss of the switch. The heat loss analysis of the switch and
its heat dissipation measures are described in Section 5. Here it
mainly introduce the heat dissipation design of the charging B. Experimental test
resistor. According to Figure 9(c) above, although the
resistance current is pulsed, it still produces the large heating The physical chart of the high frequency pulse generator
power QR under high frequency condition. The calculation designed according to the above is shown in Figure 12.
formula is as follows: Oscilloscope
Signal
ton generator

 I (t )
Switching
2
Rc dtn power

Transmission
0
QR  (28) line

fTm Load

I(t) is the pulse current, n is the number of pulses, f is the


frequency within the burst, and Tm is the trigger period. Taking Fiber optic
Water-cooled
heat sink
circuit Air-cooled
the discontinuous mode as an example, At the frequency of 10 DC power heat sink

MHz, 4000 pulses, the switch-on time 40 ns and the trigger (a) (b)
period of 5 ms, the theoretical heating power generated by the Fig. 12. (a) The physical test chart, (b) The machine picture
50 Ω charging resistor Rc is about 105 W. High-power resistor
must be selected and heat dissipation measure must be added. Figure 13(a) shows the switching terminal voltage waveform
Figure 11 shows the internal view of the heat sink. The heat of one cycle in discontinuous mode. It can be seen that the
sink uses Cu with high thermal conductivity as the material, and falling time of the switch is 2.4 ns. Figure 13(b) shows the
has a water path inside. It uses water cooling to dissipate heat drive signal waveforms for the two switches (the on-time of
and cooperates with cold source which can effectively conduct each switch is 40ns).

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Transactions on Industrial Electronics
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

500 20 600
VS1 V1
VS2 V2
400 500
15
300

Voltage/V
400
Voltage/V

10
200

Voltage/V
300
100 5
Falling Time
=2.4ns 200
0
0
-100
100
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 -200 0 200 400 600 800 1000
Time/ns Time/ns
0
(a) (b)
Fig. 13. (a) The switch terminal voltage waveform. (b) The waveform of -100
-200 -100 0 100 200 300 400 500 600 700 800 900 1000
switch drive voltages VS1 and VS2. Time/ns
(a)
5
In order to verify that the generator has discontinuous and
continuous modes, set the switch on-time to 40ns, and select 4

0.5uH and 5uH of winding inductance for experimental testing. 3


Figure 14 and Figure 15 show the transmission line capacitor

Current/A
charging voltage U1, pulse voltage U2, and inductor current IL in 2

discontinuous mode (Udc = 330V) and continuous mode (Udc = 1


250V) respectively. Because the discharge circuit has
0
unavoidable stray inductance, the tail of the pulse will have
local oscillation. The experimental results verify the previous -1
-200 -100 0 100 200 300 400 500 600 700 800 900 1000
theory and simulation. Time/ns
600
V1 (b)
500 V2 Fig. 15. Continuous mode (a) Transmission line capacitor charging
voltage U1 and pulse voltage U2, (b) Inductive current IL
400

The Figure 16 shows the experimental test waveforms of the


Voltage/V

300

200 currents IS1 and IS2 of the switches S1 and S2 in discontinuous


100
mode.
10
0 IS1
8 IS2
-100
-200 -100 0 100 200 300 400 500 600 700 800 900 1000
6
Current/A

Time/ns
500
4
400

300 2
Voltage/V

200 4.89ns 0
100 2ns
-2
0 -200 -100 0 100 200 300 400 500 600 700 800 900 1000
Time/ns
-100
195 197 199 201 203 205 207 209 211 213 215 Fig. 16. The currents IS1 and IS2 through the switches S1 and S2 in
Time/ns
discontinuous mode.
(a)
8
7 As a result of QR calculation, the Rc heating power in the
6 discontinuous mode is more than 100W. It is equipped with a
5
copper water-cooled heat sink for heat dissipation, so that the
Current/A

4
Rc temperature is controlled below 25 ° C, which verifies the
3
2
efficiency of the circulating water cooling method. The thermal
1 imager test temperature diagram is shown in Figure 17.
0
-1
-200 -100 0 100 200 300 400 500 600 700 800 900 1000
Time/ns
(b)
Fig. 14. Discontinuous mode (a) Transmission line capacitor charging
voltage U1 and pulse voltage U2, (b) Inductive current IL

It can be seen from Figure 15 that although several pulses


with lower amplitude during the front-end transition are
sacrificed in the continuous mode, the voltage gain of the stable Fig. 17. The charging resistance temperature test chart.
pulse is higher. It can output 500V pulse voltage at 250V DC
input voltage. And the heating value of the charging resistor Rc
in the continuous mode is smaller.

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Transactions on Industrial Electronics
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

V. SWITCHING HEAT LOSS MODEL AND HEAT heat dissipation of the switch increases the heat transfer from
DISSIPATION ANALYSIS the switch to the heat sink. Then heat sink dissipates heat to the
The switch can generate the large heat loss under high surrounding environment by air convection and radiation. The
frequency working condition. If the heat dissipation measure is schematic diagram is shown in Figure 20.
PCB
not designed, the internal junction temperature of the switch
Switch
will be too high, which may affect its normal operation or even
damage. Heat sink

In the high-frequency thermal management finite element


simulation of the switch, there are limitations such that the
simulation step size is too small and the software calculation
Fig. 20. The heat sink fin installation diagram.
capacity is insufficient. This paper proposes a DC equivalent
pulse method. Firstly, by measuring the terminal voltage and Rcs is the thermal resistance of the heat sink. The thermal
current waveform of the switch in one cycle, the heating power resistance of the heat sink is related to its own structure, size
in one cycle is calculated. And then the average heating power and material. Rsa is the thermal resistance of the heat sink to the
of the switch is derived, which is used as heat source. environment, which is related to the structure of the heat sink
500 10
Uds and the external cooling environment. The equivalent thermal
Id
400 8 resistance of the model can be obtained as:
300 6 R  ( Rcs  Rsa )
Current/A
Voltage/V

R  R jc  ca (31)
200 4 Rca  Rcs  Rsa
In practice Rca is much larger than Rcs and Rsa, so Rca can be
100 2
ignored. According to the formula:
0 0
T1 T2
-100 -2
Q (32)
-50 -25 0 25 50 75 100 R
Time/ns It can be calculated that the stable temperature Ta of the
Fig. 18. The switch terminal voltage Uds and leakage current Id in one
cycle in discontinuous mode.
center of the PCB and the stable temperature Tjmax of the switch
chip without heat dissipation are: 493.63 ° C and 509.35 ° C.
Take the discontinuous mode as an example, the terminal And Ta and Tjmax when heat sink is added are: 33.44 ° C and
voltage and current waveforms of the switch in one cycle are 54.38 ° C.
shown in Figure 18 (switch on time is 40ns). First calculate the In Comsol simulation, the thermal simulation of the switch is
single-cycle loss power P: performed by setting the boundary condition. Using the
generalized heat transfer equation as the boundary condition:
1
P
T 
uds (t )i (t )dt
d
(29)
pC p
T
 k T   pC p uT  Q (33)
Then calculate the switch average loss power Q: t
Pn p is the density of the material, Cp is the constant pressure
Q  (30) specific heat capacity of the material, k is the thermal
fT m
conductivity, u is the air flow rate, and Q is the heating power.
In the formula, uds is the switching source drain voltage, id is the In the actual test, because the maximum junction
leakage current, f is the frequency, and Tm is the pulse trigger temperature of the switch is considered, the simulation duration
period. is set to 20s without heat sink. Figure 21 shows the transient
Rjc Ta Tjmax Rjc Ta Rcs
Tjmax Tc temperature of the center of the PCB when the heat sink is not
applied for 20 seconds and the steady temperature of the center
of the PCB when the heat sink is applied. The simulation shows
Heating Heating
power Q
Rca power Q
Rca Rsa that the forced air cooling can reduce the center temperature of
Tb Tb
the PCB to 39.1 ° C, and control the junction temperature of the
(a) (b)
switch below the safe temperature.
Fig. 19. (a) Switching natural convection thermal resistance model, (b)
Switched forced air cooling thermal resistance model

By calculation, the switching loss power at the frequency of


up to 10MHz, 4000 pulses, and the 5ms trigger period is
23.52W. Figure 19 shows the switch thermal resistance model
with only natural air convection and the thermal resistance
model with heat sink added. Rjc is Rjc1+Rjc2 which Rjc1 is the
(a) (b)
junction-shell thermal resistance of the switch, Rjc2 is the Fig. 21. (a) The simulated transient temperature of the PCB center at 20s,
thermal resistance of the PCB. Rca is the thermal resistance of (b) The simulated forced air-cooled stable temperature of the PCB center
the PCB board to the outside. When the heat sink is added, the

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Transactions on Industrial Electronics
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

Figure 22 shows the measured temperature charts with and process in continuous mode, the output voltage has a higher
without heat dissipation during single switch operation. The gain.
simulation and actual test temperature error is within 10%, The rate of rise of pulse output voltage is almost 200V/ns.
which verifies the availability and accuracy of the thermal And a double-frequency output mode is proposed. Not only
resistance model. effectively reduces the single switching loss, but also creates a
possibility that the pulse generator output can achieve tens of
MHz that cannot be reached by the single switch.
Finally, the DC equivalent pulse method is used to realize the
thermal simulation of the switch under high-frequency
operation. The software calculation speed is improved under
the condition of ensuring accuracy. In addition, the effect of
parasitic capacitance is ignored in this thermal resistance
model. Due to the capacitance effect needs to be calculated
(a) (b)
Fig. 22. (a) The Temperature picture at 20s without heat dissipation, (b)
based on electromagnetic field simulation, and the current
The forced air-cooled stable temperature picture conventional measurement methods are relatively scarce, so
this content is one of the focuses of our follow-up work.
Figure 23 shows a picture of the PCB center stable
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0278-0046 (c) 2020 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
Authorized licensed use limited to: University of Canberra. Downloaded on June 06,2020 at 08:39:22 UTC from IEEE Xplore. Restrictions apply.
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/TIE.2020.2994860, IEEE
Transactions on Industrial Electronics
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

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7898-7907, 2016. Engineering, Wuhan, China, in 2008, the M.Eng.
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Generation of High-Frequency Burst of Bipolar Pulses for Medical the Huazhong University of Science and
Applications”, IEEE Trans. Plasma Sci, Vol. 47, n.8, pp. Technology, Wuhan, China, in 2014, and the
4091-4095, 2019. Ph.D. degree in electrical engineering from the
[16] Langning Wang and Jingliang Liu. “Solid-State Nanosecond Pulse Nagaoka University of Technology, Nagaoka,
Generator Using Photoconductive Semiconductor Switch and Japan, in 2018.From 2014 to 2015, he served as
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n.12, pp. 3240-3245, 2017. Beijing, China. He is currently an assistant professor at Chongqing
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High-Voltage Pulse Generator Based on Positive and Negative engineering from Chongqing University,
Buck-Boost DC-DC Converters Operating in Discontinuous Chongqing, China, in 2011 and 2017,
Conduction Mode”, IEEE Trans. Ind. Electron, Vol. 64, n.7, pp. respectively. Now he is a lecturer in the School of
5368-5379, 2017. Electrical Engineering, Chongqing University. His
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[25] Gynendra Kumar, Ankur Patel, Archana Sharma. “Design and Weirong Zeng was born in Chongqing, China, on
Development of High Voltage 10ns Rep-rate Pulsar”, International July 5, 1995. He received the B.Sc. degrees from
Conference on Condition Assessment Techniques in Electrical the China University of Petroleum, Qing'dao,
Systems, 2017. China, in 2018. He is currently working toward the
[26] Liang Yu, Zezheng Jiu, Taichi Sugai. “Pulsed Voltage Adder Ph. D. Degree with the Department of Electrical
Topology Based on Inductive Blumlein Lines”, IEEE Trans. Engineering, Chongqing University, Chongqing,
Plasma Sci, Vol. 46, n.5, pp. 1816-1820, 2018. China. His areas of research include pulse power
technology, new technology of electrical
Yingjiang He was born in Sichuan, China, on engineering in biomedicine and its treatment
August 13, 1995. He received the B.S. degree apparat.
from China University of Petroleum, Qing'dao,
China, in 2018. He is currently working toward the
M.S. degree in electrical engineering at the
Chongqing University. His research interests Chenguo Yao (M’08) was born in Nanchong,
include high repetition rate pulse power Sichuan, China. He received the B.S., M.S., and
technology and wide band gap semiconductor Ph.D. degrees in electrical engineering from
switch application. Chongqing University, Chongqing, China, in 1997,
2000, and 2003, respectively. He became a
Professor with the College of Electrical
Engineering, Chongqing University, in 2007. His
Jianhao Ma (S’19) was born in Hengdian, current works include pulse power technology and
Zhejiang, China, on 23 December 1993. He its application in biomedical engineering, online
received his B.S. degree in electrical engineering monitoring of insulation condition and insulation
from Guangxi University, Nanning, China, in 2016. fault diagnosis for HV apparatus.
He is currently working toward his Ph.D. degree in
electrical engineering of Chongqing University,
Chongqing, China. His areas of research include

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