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PN - Junctiondiode Exp

The document describes an experiment to measure the V-I (voltage-current) characteristic of a PN junction diode. Key points: - In forward bias, current increases exponentially with voltage until reaching the diode's knee or threshold voltage of around 0.7V, after which it increases significantly. - In reverse bias, a small constant reverse saturation current flows independent of voltage, increasing gradually with higher reverse voltages due to avalanche breakdown. - The experiment's results show the diode's negligible forward current below 0.7V knee voltage, then a sharp increase, and a constant small reverse bias current increasing at high reverse voltages.

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0% found this document useful (0 votes)
64 views4 pages

PN - Junctiondiode Exp

The document describes an experiment to measure the V-I (voltage-current) characteristic of a PN junction diode. Key points: - In forward bias, current increases exponentially with voltage until reaching the diode's knee or threshold voltage of around 0.7V, after which it increases significantly. - In reverse bias, a small constant reverse saturation current flows independent of voltage, increasing gradually with higher reverse voltages due to avalanche breakdown. - The experiment's results show the diode's negligible forward current below 0.7V knee voltage, then a sharp increase, and a constant small reverse bias current increasing at high reverse voltages.

Uploaded by

Saturn Moon
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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V-I characteristic of PN Junction

Object: To draw V-I characteristic of PN Junction diode and to determine knee or cut in voltage.
Apparatus used: PN Junction diode, voltmeter (0-2volt), voltmeter (0-30 volt), mili-ammeter,
micro-ammeter, variable source (0-2 volt and 0-30 volt).
Theory: PN Junction Diode:
The voltage current equation for diode is given by following formula.

I = 0
 ( V

V
T
(1)
Here, I: current through diode; V=Applied voltage to the diode
VT: voltage equivalent to temperature (KT/e) η :
constant (=1 for distances Ge and 2 for Si)

In forward bias When V F=+V, then eV / ηV T > 1 thus eq.(1) becomes as

I F = I 0 eV / ηV T (2)
Hence the theoretical analysis indicates that forward current increases exponentially with
voltage. But practically it is not found becausee PN junction diode has a certain
barrier/threshold/knee potential. Initially the applied forward potential to diode is used to
neutralize this barrier potential. Therefore the current is approximately zero. The current increases
appreciably after the barrier potential.

In reverse bias When V R= -V, then e V / ηV T < 1 thus eq.(1) becomes as

I R = −I0 (3)
Thus in reverse bias of diode, a constant current flows through the diode whose direction is
opposite to forward bias current. This current is known as reverse saturation current and it is
independent of voltage. At large reverse bias voltage, the reverse bias current increases gradually to
maximum due to avalanche breakdown.
Circuit diagramme:

Fig1: PN junction Diode in FB Fig 2: PN junction Diode in RB

1











Observation:

1. VF and IF for PN junction Diode in FB
 2. VR and IR for PN junction diode in RB

Sr. VF IF
No. 
 (Volt) (mA) 
 Sr. VR IR
No.
 (Volt)
 (mA)

Result:
The V-I characteristic of PN junction diode indicates that the forward current is negligible up to the
knee voltage. After that it increases appreciably. The knee voltage for diode is 0.7 volt. In reverse
bias, the constant current of µA order flows through the diode and it increases gradually to maximum at
large reverse voltage.
Precautions:
1. The connection should be tight otherwise fluctuation in voltage and current will happen.
2. At the turning point of curve, more reading should be taken.
3. For the plot of Graph, current should be taken mA for both forward and reverse biased diode.
4. The reading should be in multiple of least count.

2






V-I Characteristic Curve for PN Junction Diode in RB

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