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ECE132 Exp5

This document discusses the voltage-current (VI) characteristics of a pn-junction diode under forward and reverse bias conditions. It explains that under forward bias, the current increases gradually with voltage until reaching the knee voltage of around 0.7V, after which it increases rapidly. Under reverse bias, a small leakage current flows until the breakdown voltage is reached, causing the junction to break down and current to increase sharply. The complete VI curve illustrating the diode's behavior under both bias conditions is provided.

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Ashwin Rasheed
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48 views12 pages

ECE132 Exp5

This document discusses the voltage-current (VI) characteristics of a pn-junction diode under forward and reverse bias conditions. It explains that under forward bias, the current increases gradually with voltage until reaching the knee voltage of around 0.7V, after which it increases rapidly. Under reverse bias, a small leakage current flows until the breakdown voltage is reached, causing the junction to break down and current to increase sharply. The complete VI curve illustrating the diode's behavior under both bias conditions is provided.

Uploaded by

Ashwin Rasheed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ECE132: Basic Electrical and

Electronics EngineeringLab
Experiment 5: VI Characteristics of Diode
PN-Junction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than
the Cathode --- Current flows in the direction of the arrow in the
symbol.
Reverse Bias --- External battery makes the Cathode more positive
than the Anode --- A tiny current flows opposite to the arrow in the
symbol.
Definition of Diode
Current and Voltage
• Forward Bias
▫ When ID > 0mA
and VD > 0V p
(anode)

• Reverse Bias n
▫ When ID < 0mA (cathode)
and VD < 0V
4

Forward Biased
Forward bias is a condition that allows
current through pn junction.
A dc voltage (V bais) is applied to bias a
diode.
Positive side is connected to p-region
(anode) and negative side is connected with
n-region.
V bais must be greater than ‘barrier
As more electrons flow into
potential’ IF (mA) the depletion region reducing
the number of positive ions
and similarly more holes
V
+ F– move in reducing the positive
ions.

–
IF C
This reduces the width of
R depletion region.
+ VBIAS
Current limiting
resistance + –
B Knee
A VF
0
0 0.7 V
5

Diode V-I Characteristic


VI Characteristic for forward bias. IF (mA)

• The current in forward biased called forward


current and is designated If.
C

• At V (Vbias) across the diode, there is no forward current.


With gradual increase of Vbias, the forward voltage 0
A B Knee
VF
0 0.7 V

and forward current increases.


• A resistor in series will limit the forward current in
V
order to protect the diode from overheating and + F–
permanent damage.
–
IF
• Continuing increase of Vf causes rapid increase of
forward current but only a gradual increase in voltage R
+ VBIAS
across diode
+ –
6

Reverse Biased
• Reverse bias is a condition that
prevents current through junction.
• Positive side of Vbias is connected to the
n- region whereas the negative side
is connected with p-region.
• Depletion region get wider with The positive side of bias
this configuration. voltage attracts the majority
carriers of n-type creating
more positive ions at the
VBIAS VBR 0 junction.
– +
VR 0
Knee
This widens the depletion
I=0A region.

R
VBIAS
– +
IR
7

Diode V-I Characteristic


VI Characteristic for reverse bias.

• With 0V reverse voltage there is no


reverse current. 0
VBR
• There is only a small current through the VR 0
Knee
junction as the reverse voltage increases.
• At a point, reverse current shoots up with
the break down of diode. The voltage called
break down voltage. This is not normal
mode of operation.
• After this point the reverse voltage remains IR

at approximately VBR but IR increase very


rapidly.
• Break down voltage depends on doping level,
set by manufacturer.
8

Diode V-I Characteristic


The complete V-I characteristic curve
Knee voltage
• The minimum amount of voltage
required for conducting the diode is
known as “knee voltage” or
“threshold voltage” , “cut-in-voltage".
• The forward voltage at which
the current through PN
junction starts increasing rapidly
is known as knee voltage.
• Knee voltage of “germanium” diode
is-0.3volts
• Knee voltage of “silicon" diode is
-0.7volts
Reverse Breakdown
• As the reverse bias voltage increases, the electric field in
the depletion region increases. Eventually, it can
become large enough to cause the junction to break
down so that a large reverse current flows:

breakdown voltage
Let plot that on Virtual Lab
Thank you

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