0% found this document useful (0 votes)
68 views4 pages

01 Mosfet

1. The document discusses MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) characteristics and operation. 2. Key aspects covered include the use of a gate voltage to control channel conduction, accumulation of charge near the gate oxide/semiconductor interface, and types of MOSFETs including n-channel and p-channel devices. 3. Timing parameters like turn-on time, turn-off time and delay time that characterize MOSFET switching performance are also summarized.

Uploaded by

Vinayaniv Yaniv
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
68 views4 pages

01 Mosfet

1. The document discusses MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) characteristics and operation. 2. Key aspects covered include the use of a gate voltage to control channel conduction, accumulation of charge near the gate oxide/semiconductor interface, and types of MOSFETs including n-channel and p-channel devices. 3. Timing parameters like turn-on time, turn-off time and delay time that characterize MOSFET switching performance are also summarized.

Uploaded by

Vinayaniv Yaniv
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

POcaSemicorauctor duvicu

Devta Aatng
Poar giod 30oov, 3sooA .
12Oo uboA
Thnitor3 500 A
KH
20o , uoo A 20 KH

Pot MosFE COOV Ioo.K


Soov, 6A

Mel od Smiorndu etor Field EthTanaigBor


MOSFET

Enhan munt mod dup tHor mod


CE-tnoS FE T) CD- MosFE

SiO-> Metolonid
->ach as lL pot P-chan A-Chann
Capo ctor an d.
aids in pto duehtn
)
Channes

n-channel
lo Gng
SiO
*oppying 4Ve Go troltage nnChanan" la
4Ve ChanaL aCumi lat naar dpe
e qion
Gal mi n in sio
4Ve chauqs in å i u1
P-&ubsral
accumilot nea o end Subshot s

n-channe D-mosFET
Cn stru chon.
Veharqy
L thy u th the hols insid p
ubsbiot awa lrom tham 6666
L Geau an
eny Cqio n n-channd n
that l t e éoccupic Bub8to
applyin ve Cot valta
4Ve changg acew mi lau near
bN-Chaonl.
yaand
metd slat gol. tuwminal in St0, n
P&ubalral
- -Ne chanqu accumi lat at h ohv
end io, la
baHiach hols tn p- Bubibab
eCombine u h e and du GwreaBe the availabl no.

ptet ee Chaxa Cawuen


>0f VG =\Wp,
rie chaqs axuicx =6 po =>

Vo - > hann Cuidth 1-s T t . p 4


Vasdr-> Channel Cuidh J L In
Ope aioc Chaecteshca 9o ad, stab chanecteaesitg
Em
dputon
mod D-mod)

Na
Tarse Chaectvehos
pinch Voltag -> Vg at eohich; TpG

shocda' Vp
o Hon
x d lo plot Hansu chasxecloreshies
*P channel D-mosFET

VeIv
chann p
D-&ubstpl

NOTE
x n cbrain Cuun dpends apon the goi voltoq, it Can
Catacd o
voltae Contwlud duvte
r
Unipola dvia> Corndytkior is onl, due fo majpily
& Chavg Cavnic
Onidinechon
&tdhin o MosFET
Tun ON ime Cton) Hime inurvl v
Hcs ad uhihVg is appie ed to h
insta at cohich, duain uunt
iu on uunt Value
4 s due do CapacBanu i , OL
laydla,dla kimc Ctan)
->1ONL,it lime Ctr)
tanime inlvel at ohich
got toltaq is appled and -|'

to the instand a eohic tr 4


NGs teaches honeshold lmt
CVG)
->
duwing 4his aula ime,
CapacHo stor Ho
Cha
Ton
tme inlu Val taluri hy g lo rcach em lo/, teao1
Finl valueCVai-s Vgr sp)

Hme innvo in uhich, 2o heaches lom lo. to ao o

tt's nl taue ie, Io


k Ton mus be os lots a poisi ble
forn OFF tme tme tatn hy In to (eath o, rorn fll
Cuwunt (too7.J
dulay me Ca4)
un1ime
Ltall time C
to tall om Cne Voldags 3 to Vgse
d- me toln by Vs
eneuh o dbeive MosFET)
Caot. Vt
\/otap
ime abn y Va to Jol mom Vgap to VGa1 (oq oIu
andhen, 1p 4oll, to u o (

OFF
e s Vesn
i 1os FE1S wrned
Cnducttng pak
x MOSFE 1 Vs BT due to Gnqh
O slat Conduelton los ge
loto 8itching loe hut more
du to 8i0 cing an in&ulator
a hiaheqnC, PrmesFET i hoen

->Votoqs Controlud deuie Ip 4 (Vgy


slanc Bo, caste
HVmpor auie Co(paint o
ei

Paual-opuaton.
Lhigh wount Cauuin
Capabilk
>nlo 8ecanday ealt docon.

You might also like