POcaSemicorauctor duvicu
Devta Aatng
Poar giod 30oov, 3sooA .
12Oo uboA
Thnitor3 500 A
KH
20o , uoo A 20 KH
Pot MosFE COOV Ioo.K
Soov, 6A
Mel od Smiorndu etor Field EthTanaigBor
MOSFET
Enhan munt mod dup tHor mod
CE-tnoS FE T) CD- MosFE
SiO-> Metolonid
->ach as lL pot P-chan A-Chann
Capo ctor an d.
aids in pto duehtn
)
Channes
n-channel
lo Gng
SiO
*oppying 4Ve Go troltage nnChanan" la
4Ve ChanaL aCumi lat naar dpe
e qion
Gal mi n in sio
4Ve chauqs in å i u1
P-&ubsral
accumilot nea o end Subshot s
n-channe D-mosFET
Cn stru chon.
Veharqy
L thy u th the hols insid p
ubsbiot awa lrom tham 6666
L Geau an
eny Cqio n n-channd n
that l t e éoccupic Bub8to
applyin ve Cot valta
4Ve changg acew mi lau near
bN-Chaonl.
yaand
metd slat gol. tuwminal in St0, n
P&ubalral
- -Ne chanqu accumi lat at h ohv
end io, la
baHiach hols tn p- Bubibab
eCombine u h e and du GwreaBe the availabl no.
ptet ee Chaxa Cawuen
>0f VG =\Wp,
rie chaqs axuicx =6 po =>
Vo - > hann Cuidth 1-s T t . p 4
Vasdr-> Channel Cuidh J L In
Ope aioc Chaecteshca 9o ad, stab chanecteaesitg
Em
dputon
mod D-mod)
Na
Tarse Chaectvehos
pinch Voltag -> Vg at eohich; TpG
shocda' Vp
o Hon
x d lo plot Hansu chasxecloreshies
*P channel D-mosFET
VeIv
chann p
D-&ubstpl
NOTE
x n cbrain Cuun dpends apon the goi voltoq, it Can
Catacd o
voltae Contwlud duvte
r
Unipola dvia> Corndytkior is onl, due fo majpily
& Chavg Cavnic
Onidinechon
&tdhin o MosFET
Tun ON ime Cton) Hime inurvl v
Hcs ad uhihVg is appie ed to h
insta at cohich, duain uunt
iu on uunt Value
4 s due do CapacBanu i , OL
laydla,dla kimc Ctan)
->1ONL,it lime Ctr)
tanime inlvel at ohich
got toltaq is appled and -|'
to the instand a eohic tr 4
NGs teaches honeshold lmt
CVG)
->
duwing 4his aula ime,
CapacHo stor Ho
Cha
Ton
tme inlu Val taluri hy g lo rcach em lo/, teao1
Finl valueCVai-s Vgr sp)
Hme innvo in uhich, 2o heaches lom lo. to ao o
tt's nl taue ie, Io
k Ton mus be os lots a poisi ble
forn OFF tme tme tatn hy In to (eath o, rorn fll
Cuwunt (too7.J
dulay me Ca4)
un1ime
Ltall time C
to tall om Cne Voldags 3 to Vgse
d- me toln by Vs
eneuh o dbeive MosFET)
Caot. Vt
\/otap
ime abn y Va to Jol mom Vgap to VGa1 (oq oIu
andhen, 1p 4oll, to u o (
OFF
e s Vesn
i 1os FE1S wrned
Cnducttng pak
x MOSFE 1 Vs BT due to Gnqh
O slat Conduelton los ge
loto 8itching loe hut more
du to 8i0 cing an in&ulator
a hiaheqnC, PrmesFET i hoen
->Votoqs Controlud deuie Ip 4 (Vgy
slanc Bo, caste
HVmpor auie Co(paint o
ei
Paual-opuaton.
Lhigh wount Cauuin
Capabilk
>nlo 8ecanday ealt docon.