Datasheet Op2134
Datasheet Op2134
0.001
available for design analysis.
VS = ±16
Device Information(1)
0.0001
PART NUMBER PACKAGE BODY SIZE (NOM)
SOIC (8) 3.91 mm × 4.90 mm
VS = ±17 VS = ±18
OPA134
PDIP (8) 6.35 mm × 9.81 mm
0.00001
20 100 1k 10k 20k SOIC (8) 3.91 mm × 4.90 mm
OPA2134
Frequency (Hz) PDIP (8) 6.35 mm × 9.81 mm
OPA4134 SOIC (14) 3.91 mm × 8.65 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA134, OPA2134, OPA4134
SBOS058A – DECEMBER 1997 – REVISED OCTOBER 2015 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 15
2 Applications ........................................................... 1 8.1 Application Information............................................ 15
3 Description ............................................................. 1 8.2 Typical Application ................................................. 16
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 18
5 Pin Configuration and Functions ......................... 3 10 Layout................................................................... 18
6 Specifications......................................................... 4 10.1 Layout Guidelines ................................................. 18
6.1 Absolute Maximum Ratings ...................................... 4 10.2 Layout Example .................................................... 19
6.2 ESD Ratings.............................................................. 4 11 Device and Documentation Support ................. 20
6.3 Recommended Operating Conditions....................... 4 11.1 Device Support .................................................... 20
6.4 Electrical Characteristics........................................... 5 11.2 Documentation Support ....................................... 20
6.5 Typical Characteristics .............................................. 7 11.3 Related Links ........................................................ 20
7 Detailed Description ............................................ 12 11.4 Community Resources.......................................... 21
7.1 Overview ................................................................. 12 11.5 Trademarks ........................................................... 21
7.2 Functional Block Diagram ....................................... 12 11.6 Electrostatic Discharge Caution ............................ 21
7.3 Feature Description................................................. 12 11.7 Glossary ................................................................ 21
7.4 Device Functional Modes........................................ 14 12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
Out A 1 14 Out D
–In A 2 13 –In D
A D
+In A 3 12 +In D
V+ 4 11 V–
+In B 5 10 +In C
B C
–In B 6 9 –In C
Out B 7 8 Out C
6 Specifications
6.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage, V+ to V– 36 V
Input voltage (V–) –0.7 (V+) +0.7 V
Output short circuit (2) Continuous
Operating temperature –40 125 °C
Junction temperature 150 °C
Lead temperature (soldering, 10 s) 300 °C
Tstg Storage temperature –55 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to ground, one amplifier per package.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) dBu = 20*log (Vrms/0.7746) where Vrms is the maximum output voltage for which THD+Noise is less than 0.01%. See THD+Noise text.
(2) Proposed by design.
(3) Proposed by wafer-level test to 95% confidence level.
(4) High-speed test at TJ = 25°C.
0.1 5
RL G = +1
2kW f = 1kHz
1 RL = 2kW
600W
0.01
THD+Noise (%)
0.1
IMD (%)
0.001 OPA134
G = +10 OP176
0.010
OPA134
0.0001
G = +1 Baseline
VO = 3Vrms 0.001
0.00001 0.0005
10 100 1k 10k 100k 30m 0.1 1 10 30
Frequency (Hz) Output Amplitude (Vpp)
Figure 1. Total Harmonic Distortion + Noise vs Frequency Figure 2. SMPTE Intermodulation Distortion vs Output
Amplitude
0.01 1
VO = 10Vrms VS = ±18V THD < 0.01%
RL = 2kW RL = 2kW OPA134 – 11.7Vrms
f = 1kHz OP176 – 11.1Vrms
0.1
THD+Noise (%)
0.001
THD+Noise (%)
VS = ±16
0.010
OPA134
0.0001 OPA134
OP176
Figure 3. Total Harmonic Distortion + Noise vs Frequency Figure 4. Headroom – Total Harmonic Distortion + Noise vs
Output Amplitude
0.01 1k
2nd Harmonic
OP176+
Amplitude (% of Fundamentals)
3rd Harmonic
Resistor
Voltage Noise (nV/ÖHz)
0.001 100
00W
=6
RL
0.0001 10
OPA134+
Resistor
= 2kW
RL
0.00001 1
Resistor Noise
VO = 1Vrms Only Vn (total) = Ö(inRS)2 + en2 + 4kTRS
0.000001 0.1
20 100 1k 10k 20k 10 100 1k 10k 100k 1M 10M
Frequency (Hz) Source Resistance (W)
Figure 5. Harmonic Distortion + Noise vs Frequency Figure 6. Voltage Noise vs Source Resistance
10 1
RMS
Current Noise
1 0.1
1 10 100 1k 10k 100k 1M 1 10 100 1k 10k 100k
Frequency (Hz) Noise Bandwidth (Hz)
Figure 7. Input Voltage and Current Noise Spectral Density Figure 8. Input-Referred Noise Voltage vs Noise Bandwidth
vs Frequency
160 0 50
140
40
120 –45 G = +100
100
Phase Shift (°)
f
80 –90 20
G = +10
60 10
40 –135
0
20 G G = +1
–10
0 –180
–20 –20
0.1 1 10 100 1k 10k 100k 1M 10M 1k 10k 100k 1M 10M
Frequency (Hz) Frequency (Hz)
Figure 9. Open-Loop Gain and Phase vs Frequency Figure 10. Closed-Loop Gain vs Frequency
120 160
RL = ∞
100 –PSR
Channel Separation (dB)
140
PSR, CMR (dB)
80
60 120
Dual and quad devices. RL = 2kW
G = 1, all channels.
40 +PSR Quad measured channel
100 A to D or B to C—other
20 CMR combinations yield improved
rejection.
0 80
10 100 1k 10k 100k 1M 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)
Figure 11. Power Supply and Common-Mode Rejection vs Figure 12. Channel Separation vs Frequency
Frequency
20
0.1
G = +100
0.01
10
VS = ±5V G = +10
0.001
G = +2
VS = ±2.5V G = +1
0 0.0001
10k 100k 1M 10M 10 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)
Figure 13. Maximum Output Voltage vs Frequency Figure 14. Closed-Loop Output Impedance vs Frequency
100k 10
High Speed Test
9 High Speed Test
Warmed Up
10k
8
Input Bias Current (pA)
Figure 15. Input Bias Current vs Temperature Figure 16. Input Bias Current vs Input Common-Mode
Voltage
150 120
RL = 600W
140
RL = 2kW
Open-Loop Gain (dB)
110
CMR, PSR (dB)
130 PSR
120
100
RL = 10kW
110
CMR
100 90
–75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125
Temperature (°C) Ambient Temperature (°C)
Figure 17. Open-Loop Gain vs Temperature Figure 18. CMR, PSR vs Temperature
13 –55°C
4.2 50
–10
4.0 30 85°C
±I Q –11 125°C
–12
3.9 20 –13 25°C –55°C
–14
VIN = –15V
3.8 10 –15
–75 –50 –25 0 25 50 75 100 125 0 10 20 30 40 50 60
Ambient Temperature (°C) Output Current (mA)
Figure 19. Quiescent Current and Short-Circuit Current vs Figure 20. Output Voltage Swing vs Output Current
Temperature
18 12
Typical production Typical production
16 distribution of packaged distribution of packaged
10
14 units. units.
12 8
10
6
8
6 4
4
2
2
0 0
–2000
–1800
–1600
–1400
–1200
–1000
–800
–600
–400
–200
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5
12.5
11.5
Offset Voltage (V) Offset Voltage Drift (µV/°C)
Figure 21. Offset Voltage Production Distribution Figure 22. Offset Voltage Drift Production Distribution
50mV/div
5V/div
200ns/div 1μs/div
Figure 23. Small-Signal Step Response G = 1, CL = 100 pF Figure 24. Large-Signal Step Response G = 1, CL = 100 pF
50 G = +1
Settling Time (µs)
10 0.01% 40
Overshoot (%)
G = –1
30
0.1%
1 20
10 G = ±10
0.1 0
±1 ±10 ±100 ±1000 100pF 1nF 10nF
Closed-Loop Gain (V/V) Load Capacitance
Figure 25. Settling Time vs Closed-Loop Gain Figure 26. Small-Signal Overshoot vs Load Capacitance
7 Detailed Description
7.1 Overview
The OPA134 series are ultra-low distortion, low-noise operational amplifiers fully specified for audio applications.
A true FET input stage is incorporated to provide superior sound quality and speed for exceptional audio
performance. This, in combination with high output drive capability and excellent DC performance, allows for use
in a wide variety of demanding applications. In addition, the OPA134 has a wide output swing, to within 1 V of
the rails, allowing increased headroom and making it ideal for use in any audio circuit.
Input Offset
Adjust
(OPA134 only)
+IN +
Output
-IN ±
Input Offset
Compensation
Adjust
(OPA134 only)
R1 R2
SIG. DIST.
GAIN GAIN R1 R2 R3
1 101 ∞ 1kW 10W
11 101 100W 1kW 11W
R3 OPA134 VO = 3Vrms
R
Signal Gain = 1+ 2
101 101 10W 1kW ∞
R1
R2
Distortion Gain = 1+
R1 II R3
Generator Analyzer
Output Input
This technique can be verified by duplicating measurements at high gain or high frequency, where the distortion
is within the measurement capability of the test equipment. Measurements for this data sheet were made with an
Audio Precision distortion and noise analyzer, which greatly simplifies repetitive measurements. The
measurement technique can, however, be performed with manual distortion measurement instruments.
OPA134 VOUT
VIN
Figure 28. Impedance Matching for Maintaining Low Distortion in Non-Inverting Circuits
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10nF
100kW
7
2 1
8
OPA134 6
3
V–
1 nF
590 499
Input ±
Output
39 nF +
Figure 30. OPA134 2nd Order 30-kHz, Low Pass Filter Schematic
20
Gain (db)
-20
-40
-60
100 1k 10k 100k 1M
Frequency (Hz)
Figure 31. OPA134 2nd Order 30-kHz, Low Pass Filter Response
CAUTION
Supply voltages larger than 36 V can permanently damage the device; see the
Absolute Maximum Ratings.
Place 10-nF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-
impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
Guidelines.
10 Layout
VIN +
RG VOUT
RF
(Schematic Representation)
Place components
Run the input traces close to device and to
as far away from each other to reduce
the supply lines parasitic errors VS+
as possible RF
NOTE
These files require that either the TINA software (from DesignSoft™) or TINA-TI software
be installed. Download the free TINA-TI software from the TINA-TI folder.
11.5 Trademarks
SoundPlus, TINA-TI, E2E are trademarks of Texas Instruments.
TINA, DesignSoft are trademarks of DesignSoft, Inc.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 26-Feb-2016
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
OPA134PA ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type OPA134PA
& no Sb/Br)
OPA134PA3 OBSOLETE PDIP P 8 TBD Call TI Call TI
OPA134PAG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type OPA134PA
& no Sb/Br)
OPA134UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 134UA
OPA134UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 134UA
OPA134UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 134UA
OPA134UA3 OBSOLETE PDIP P 8 TBD Call TI Call TI
OPA134UAE4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 134UA
OPA134UAG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 134UA
OPA2134PA ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type -40 to 85 OPA2134PA
& no Sb/Br)
OPA2134PAG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type -40 to 85 OPA2134PA
& no Sb/Br)
OPA2134UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 2134UA
OPA2134UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 2134UA
OPA2134UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 2134UA
OPA2134UAE4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 2134UA
OPA2134UAG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA
& no Sb/Br) 2134UA
OPA4134PA OBSOLETE PDIP N 14 TBD Call TI Call TI
OPA4134UA ACTIVE SOIC D 14 50 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA4134UA
& no Sb/Br)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 26-Feb-2016
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
OPA4134UA/2K5 ACTIVE SOIC D 14 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA4134UA
& no Sb/Br)
OPA4134UA/2K5E4 ACTIVE SOIC D 14 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA4134UA
& no Sb/Br)
OPA4134UAE4 ACTIVE SOIC D 14 50 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 OPA4134UA
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com 26-Feb-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Feb-2016
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Feb-2016
Pack Materials-Page 2
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