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AIM: To Plot The Static V-I Characteristic of SCR, MOSFET and IGBT Apparatus

The document describes an experiment to plot the static V-I characteristics of an SCR, MOSFET, and IGBT. The apparatus includes an SCR power supply kit, component kit, multimeter, and patch cords. The experiment involves measuring and recording the voltage and current values for each component under different conditions, and using the data to plot the V-I characteristics on a graph. Key values determined are the SCR's forward breakover voltage, latching current, and holding current. The goals are to understand the switching behavior and characteristics of these semiconductor components.

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kashishlala
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381 views4 pages

AIM: To Plot The Static V-I Characteristic of SCR, MOSFET and IGBT Apparatus

The document describes an experiment to plot the static V-I characteristics of an SCR, MOSFET, and IGBT. The apparatus includes an SCR power supply kit, component kit, multimeter, and patch cords. The experiment involves measuring and recording the voltage and current values for each component under different conditions, and using the data to plot the V-I characteristics on a graph. Key values determined are the SCR's forward breakover voltage, latching current, and holding current. The goals are to understand the switching behavior and characteristics of these semiconductor components.

Uploaded by

kashishlala
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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LHS Side

AIM: To Plot the Static V-I Characteristic of SCR,MOSFET and IGBT

APPARATUS:-
1. SCR power supply kit
2. Component kit
3. Multimeter
4. Patch Cords

Circuit Diagram
I A (0-500)mA
2K/25 W
I g (0-20)mA

V AK
V AK (0-500)V
V g (0-20)V

Ideal Graph:
RHS Side

AIM: To Plot the Static V-I Characteristic of SCR,MOSFET and IGBT

PART A:

To plot V-I characteristic of SCR and determine Holding current and Latching
current.

PART B:
To study switching characteristics of TRIAC, MOSFET, IGBT,DIAC and draw V-
I characteristics.

APPARATUS:-
1. SCR power supply kit
2. Component kit
3. Multimeter
4. Patch Cords

THEORY:-

Thyristor is a family of semiconductor devices used for power


control.SCR is the oldest and widely used member of the thyristor family.

SCR is a semiconducting device made up of four layers of P & N type of semiconducting


material. As a result there are three junctions J1,J2 and J3 as shown in Fig(i). .The three
terminals are anode(A),cathode(K) and gate(G).The symbolic representation of SCR is
shown in Fig(ii).

Operating and Working

Effect of Forward Voltage:


When anode is made positive with respect to cathode junctions J1 and J3
are forward biased while junction J2 is reversed biased. As a result depletion layer is
developed across reverse biased junction J2 and leakage current due to minority charge
carriers known as forward blocking current flows through the device in forward
direction(from A to K). The device in this condition is said to be in the FORWARD
BLOCKING STATE or OFF STATE.As A to K voltage is increased at a certain point
,avalanche breakdown of the depletion layer at junction J2 take place.The voltage at which
reverse biased junction J2 break down while the device is forward biased is known as
FORWARD BREAK IOVER VOLTAGE VBF .After breakdown A to K voltage across the
SCR decreases and the forward current increases .so, this region is known as negative
resistance region.Now space charge is wiped off and with J1 and J3 forward biased there is
free movement of charge carrier across all junction.The device is said to be in
CONDUCTING STATE or ON STATE.
Effect of Reverse Voltage:
If voltage is applied in reverse direction i.e cathode is made positive with
respect to anode, junction J1 and J3 are reverse biased while junction J2 is forward biased.
Again a small amount of leakage current due to minority charge carrier flows through the
device in reverse direction (from K to A).This is known as REVERSE BLOCKING
STATE.As reverse voltage is increased, at certain point depletion layer at reverse biased
junction J1 and J3 breakdown and the reverse current increases abruptly. The voltage at
which depletion layers at junction J1 and J3 breakdown while device is reverse biased is
kown as REVERSE BREAKOVER VOLTAGE VBR.

PROCEDURE:-
1.Observe terminal configuration of SCR.
2. Connect SCR Anode, Cathode and Gate terminal to appropriate points with respect to
the diagram on top of RHS on Part II panel. Check connection properly before putting
link for anode supply.
3. Keep dimmer voltage minimum and pot p1 in most anticlockwise position(min.)
4.To Plot V-I Characteristics
i) The value of Gate current Ig is set to convenient value by adjusting Vg (say Ig
=12.5mA)
ii) By varying anode-cathode supply voltage VAA gradually in step by step,note
down the corresponding VAK & IA. Note down VAK & IA at the instant of
firing of SCR and after firing.
iii) The point at which the SCR fires, gives the value of break over voltage VBF.
iv) Plot characteristic of VAK v/s IA on graph paper.

5. Latching Current measurement:


i) Apply about 100 volts between anode and cathode .Use fixed load resistance.
The device must be in off state with open gate. Gradually increase the gate
supply voltage by varying the pot slowly [ do not increase the gate current
suddenly].
Observe the minimum gate current required to turn on the device.
Note down Igmin = ____________ Vgmin =_______
ii) Adjust gate voltage to a slightly higher value than what is found in step i). The
device must be in off state.Simply remove the patch cord of anode supply to
turn off SCR.With anode voltage applied and gate drive provided the SCR will
switch ON and remain in ON condition only if resultant anode current is above
some minimum value that is latching current value.
iii) The gate voltage must be kept constant . Connect the multimeter across terminal
A & K to note down forward breakover voltage VBF. It is the voltage at which
device is Forward biased i.e. turn on. Increase the supply voltage in steps and
after each step open and close the gate supply. For every increase , observe VBF
and note down the value of Latching current, when this voltage drops down to
zero value. If anode current is greater than this latching current of device , then
the device stays on even after gate current is removed.

Note down the value of Latching Current IL =____

6. Holding Current Measurement

i) Increase the anode current from latching current level by increasing supply voltage
slightly. Remove the gate supply permanently. The thyristor must be fully ON.
ii) Now start decreasing the anode current gradually by decreasing the supply voltage.
This process is continued until at a certain level of current, ammeter pointer
suddenly jumps back to zero. This minimum level of current is holding current.
Note down the value of Holding Current IH =____

Result and Conclusion: -

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