UNIT -2

FABRICATION OF MOSFET
SIMPLIFIED PROCESS SEQUENCE FOR FABRICATION-
 CMOS fabrication technology requires both NMOS and PMOS transistor to be built on the
same chip substrate.
 To accommodate both NMOS & PMOS devices, special regions must be created in which
the semiconductor type is opposite to the substrate type. These special regions are called
wells or tubs.
 So, a n well is formed in a P substrate and a P well is formed in a n substrate.
The simplified process sequence for the fabrication of CMOS-
 The process starts with the creation of the n well regions for PMOS and p well regions for
NMOS by ion implantation into the substrate.
 Ion implantation is the process of adding impurities to a silicon wafer.
 Then a thick oxide is grown in the regions surrounding the NMOS and PMOS active
regions. The thin gate oxide is subsequently grown on the surface through thermal
oxidation.
 Again a polysilicon layer is deposited on the surface of the oxide layers and selectively
removed to form the gate.
 These steps are followed by the creation of n+ and P+ regions.
 At last metallization is done means creation of metal interconnects.
 Metallization is the process by which the components of IC’s are interconnected by
aluminum conductor.
 Channel stop implant is used to prevent the formation of any unwanted channels
between two neighboring regions. Hence channel stop implants act to electrically isolate
neighboring devices built on the same substrate.
 BASIC STEPS OF FABRICATION-
 The fabrication cycle of VLSI chips consists of a sequential set of basic steps which are
wafer preparation, oxidation, lithography and etching.
 During fabrication process, the devices are created on the chip. So, IC may be viewed as
a set of patterned layers.
 A layer must be patterned before the next layer of material is applied on the chip.
 Pattering uses the process of lithography. The process used to transfer a pattern to a
layer on the chip is called lithography.
 The lithography sequence must be repeated for every layer.
Steps:
 First we take a Si substrate.

 The sequence starts with the thermal oxidation of the silicon surface. Due to which oxide
layer formed of 1mm thickness.
 The entire oxide surface is then covered with a layer of photoresist.

 Photoresist is a light sensitive material. It is of 2 types.

1) Positive photoresist
2) Negative photoresist

 Positive photoresist is initially insoluble and becomes soluble after exposure to UV light.
 Negative photoresist is initially soluble and becomes insoluble after exposure to UV
light.
 Here we use positive photoresist. So, we have to cover some of the areas on the surface
and selectively expose the photoresist.
 The areas becomes soluble, which are exposed to UV rays.

 Then the soluble areas can be etched away. Etching is the process of material being
removed from the surface.
 The two major types of etching are wet etching and dry etching.
 The etching process that involves using liquid chemicals to take off the substrate
material is called wet etching. Ex- Hydrofluoric Acid, Nitric acid, Acetic acid
 The dry etching is known as plasma etching. Etchant gases are used to remove the
substrate material. Ex. Tetra fluoromethane, sulfur hexafluoride, Nitrogen trifluoride,
Chlorine gas, Fluorine gas
 Negative photoresists are more sensitive to light, but their photolithographic
resolution is not as high as that of the positive photoresists. Therefore, negative
photoresists are used less commonly.
 The silicon dioxide regions which are not covered by hardened photoresist can be
etched away either by using a chemical solvent or by using a dry etching process.

 After that the unexposed portions of the photoresist can be removed by a chemical
leaving the patterned Si𝑂2.

FABRICATION PROCESS OF NMOS TRANSISTOR-

 First we take a p type silicon substrate.

 The process starts with the oxidation of the silicon substrate

 Then the field oxide is selectively etched to expose the silicon surface.

 Again the surface is covered with a thin oxide layer.

 On top of the thin oxide layer, a layer of polysilicon is deposited.

 After deposition, the polysilicon layer is patterned and etched to form gate of the
MOSFET.

 The thin gate oxide not covered by polysilicon is also etched away, which exposes the
silicon surface on which the source and drain junctions are to be formed.
 The entire silicon surface is then doped with a high concentration of impurities,
ultimately creating two n type regions.

 Once the source and drain regions are completed, the entire surface is again covered
with an insulating layer of silicon dioxide.

 The insulating oxide layer is then patterned in order to provide contact windows for the
drain and source.

 Then the surface is covered with evaporated aluminum which will form the
interconnects.
 Finally the metal layer is patterned and etched, completing the interconnection of the
MOS transistors on the surface.

CMOS N-WELL FABRICATION PROCESS FLOW-

 For less power dissipation requirement CMOS technology is used for implementing
transistor.
 The ne well technology and p-well technologies are used for fabrication of CMOS.
Now let’s discuss the steps of CMOS n-well fabrication.
 First we select a substrate as a base for fabrication. So, here we select a p-type
substrate.

 Silicon dioxide layer formed by oxidation process on the Si substrate.

 For selective etching the Si𝑂2 layer is subjected to photolithography process. In this
process, the wafer is coated with a uniform film of a photosensitive material known as
photoresist.
 The photoresist layer selectively exposed to UV rays.

 The soluble photoresist is removed.

 The exposed silicon dioxide region is removed.

 The remaining photoresist layer is removed.

 N well is formed using ion implantation or diffusion.

  The remaining silicon dioxide is removed.

CMOS FABRICATION PROCESS BY N-WELL ON P SUBSTRATE-

 For N well process first we take a P type substrate.

 Substrate is oxidized in high temperature.

 Apply photoresist on the surface of the silicon dioxide.

 Selectively expose the photoresist to the UV rays.

 The soluble photoresist is removed.

  The exposed Silicon dioxide region is removed.

 The entire photoresist layer is stripped off.

 By using ion implantation or diffusion process N-well is formed.

 The remaining silicon dioxide is removed.

 A thin layer of gate oxide is deposited on the surface of the substrate. Then apply the
polysilicon on the surface.

 Gate oxide and polysilicon layers are selectively removed.

 An oxide layer is formed on the surface.

 By using the masking process small gaps are made for the purpose of N-diffusion.

 Using diffusion or ion implantation method n type regions are formed.

 The remaining oxide layer is stripped off.

 Similar to the above process, the p type regions are formed.

 A thick-field oxide is formed in all regions and then selectively removed.

 Then the surface is covered with evaporated aluminum.

 The excess metal is removed from the surface.

 The terminals of the PMOS and NMOS are made from respective gaps.

CMOS FABRICATION PROCESS BY P-WELL ON N SUBSTRATE-

 For P well process first we take an N type substrate.

  Substrate is oxidized in high temperature.

 Apply photoresist on the surface of the silicon dioxide.

 Selectively expose the photoresist to the UV rays.

 The soluble photoresist is removed.

 The exposed Silicon dioxide region is removed.

 The entire photoresist layer is stripped off.

  By using ion implantation or diffusion process P-well is formed.

 The remaining silicon dioxide is removed.

 A thin layer of gate oxide is deposited on the surface of the substrate. Then apply the
polysilicon on the surface.

 Gate oxide and polysilicon layers are selectively removed.

 An oxide layer is formed on the surface.

 By using the masking process small gaps are made for the purpose of P-diffusion.

 Using diffusion or ion implantation method P type regions are formed.

 The remaining oxide layer is stripped off.

 Similar to the above process, the n type regions are formed.

 A thick-field oxide is formed in all regions and then selectively removed.

 Then the surface is covered with evaporated aluminum.

 The excess metal is removed from the surface.

 The terminals of the PMOS and NMOS are made from respective gaps.

LAYOUT DESIGN RULES-

 The physical mask layout of any circuit to be manufactured using a particular process must
confirm to set of geometric constraints or rules, which are generally called layout design rules.
The design rules are described in two ways-
1) Micron rules-
Micron rules, in which the layout constraints such as minimum feature sizes and
minimum allowable feature separations are stated in terms of absolute dimensions in
micrometers.
2) Lambda rules-
Lambda rules specify the layout constraints in terms of a single parameter (λ) and
thus allow linear, proportional scaling of all geometrical constraints.

STICK DIAGRAM OF CMOS INVERTER-

Stick Diagram-