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Lec12-Optical Modulators and Detectors

This document provides an overview of optical modulators, detectors, and their applications in electrical engineering. It discusses internal and external modulation, as well as common types of external modulators like electro-optic, magneto-optic, and acousto-optic modulators. Photodetectors are described including photoconductive, photoemissive, photodiodes, and avalanche photodiodes. Key performance parameters for photodetectors like sensitivity, speed, and noise are also summarized. Typical characteristics of different materials and structures for junction photodiodes and avalanche photodiodes are presented.

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Sheref Hesham
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51 views49 pages

Lec12-Optical Modulators and Detectors

This document provides an overview of optical modulators, detectors, and their applications in electrical engineering. It discusses internal and external modulation, as well as common types of external modulators like electro-optic, magneto-optic, and acousto-optic modulators. Photodetectors are described including photoconductive, photoemissive, photodiodes, and avalanche photodiodes. Key performance parameters for photodetectors like sensitivity, speed, and noise are also summarized. Typical characteristics of different materials and structures for junction photodiodes and avalanche photodiodes are presented.

Uploaded by

Sheref Hesham
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Faculty of Engineering & Technology

Electrical Engineering Department

Optical Electronics
(ELE 412)

Prof. Dr.Kamel Hassan

1
Optical Modulators and Detectors
Optical Modulators
1. Types

I. Internal modulation

II. External modulation


For biasing the LD we have take into
consideration turn on delay which is given
by

Where
: recombination life time
: pulse current amplitude
: the bias current
: threshold current
II. External modulation
It is done outside the lasing cavity.
Modify either amplitude and intensity ,frequency ,
phase, polarization state, direction or coherence of the
wave.
The choice depends on : nature of information source,
environmental, cost.
Types of External Modulators
i. Electro – optic Modulator.
ii. Magneto – optic Modulator.
iii. Acousto – optic Modulator.
Applications
Phase modulation
Amplitude Modulation
A. Structure
Two state electro optic switch
Photodetectors
Objective
Photo-detection is the process that enables light
signals to be sensed and measured
Requirements
.High sensitivity
{High quantum efficiency at operating
wavelength}
.High speed
.Low noise
Types
1. Photoconductive{Internal photo electric effect}
2. Photo-emissive:{External photo electric effect}
2.a Vacuum Photodiode(Photocathode material +
Anode)
2.b Photomultiplier
3. Photodiodes (PN_PIN and APD) used
essentially for FOCS
Junction Photodiode
Principles of operation
Photovoltaic mode
vj = kT/q ln (1+ip i
/ 0 )
i equilibrium current (Diffusion and drift)
0
Ip increase of drift current due to photon absorption
It causes reduction in junction voltage vj
Pin Photodetector
• Structure: p and n regions separated by a very
light n doped –intrinsic (i) region
• Operation: Photons of energy >Eg …
e/h..photocurrents
• Lp ,Ln
• P(x)=p0 (1-exp(-()x)
PIN
Performance Parameters
1.Sensitivity
R= e/h
2. Speed Response
A. Time taken by photoelectron to drift across the depletion
layer
– It depends on drift velocity Vd (It varies with applied
voltage…the saturation value =5x104 v/cm ). For Si,d=
2.5 m td = 0.05 ns …20GHz
Performance Parameters(Continued)

• B. Diffusion Time across the p and n materials .


.Using small thickness (O.5 m)
• C. Time constant RC :As this quantity decreases ,
the BW increases
• C: junction Capacitance ,as it decreases Photosensitive area
decreases ,then  decreases too (C= 25 pF)
• R: As R decreases ,the output voltage decreases
Performance
Parameters(Continued)
3. Noise
Shot noise
In=(2eB iD )1/2
iD =ip+id
Noise Equivalent Power “NEP”
The power that produces photocurrent =the dark current
(ip=in)
NEP=h (2id Be)1/2 W Hz -1
Performance
Parameters(Continued)
iR = (4kTB/R)1/2
iN=(4kTB/R)1/2 +(2eB id )1/2
Avalanche Photodiode

• Structure:
• Reach-through diode p+ n+ , region(Most of photons are
absorbed )
Photoelectrons move to p region , high electric field….
Avalanche multiplication ---- internal multiplication. Holes generated in
 region …p+ …no multiplication….superior noise characteristic.
Avalanche Photodiode

• Advantages:
1. Excellent linearity over large optical power
range{nW:W)
2. High sensitivity
• Disadvantages
1. Gain is temperature dependent
2. Excess noise due to random nature of
multiplication factor M
APD

M= 1/(1-(vd /VBR)n
R(Responsivity) =(20:80)

Which is better PIN or APD?


Criteria of choosing the load resistor
Typical characteristics of junction photodiode
Material Structure Rise time Wavelength Responsivity Dark current Gain
(ns) (nm) (A/W) (nA)

Silicon PIN 0.5 300-1100 0.5 1 1

Germaniu PIN 0.1 500-1800 0.7 200 1


m

InGa As PIN 0.3 900-1700 0.6 10 1

Silicon APD 0.5 400-1000 75 15 150

Germaniu APD 1 1000-1600 35 700 50


m

InGa As APD 0.25 1000-1700 12 100 20

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