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2sa1486 2

This document provides information on the 2SA1486 silicon PNP power transistor from ISC. It has a collector-emitter breakdown voltage of -80V minimum and is intended for use in low frequency power amplifier applications. The document lists maximum ratings and electrical characteristics including current, voltage, and gain parameters. It also notes that ISC reserves the right to change specifications without notice and that the transistor is intended for general electronic equipment rather than applications requiring specialized reliability.

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52 views2 pages

2sa1486 2

This document provides information on the 2SA1486 silicon PNP power transistor from ISC. It has a collector-emitter breakdown voltage of -80V minimum and is intended for use in low frequency power amplifier applications. The document lists maximum ratings and electrical characteristics including current, voltage, and gain parameters. It also notes that ISC reserves the right to change specifications without notice and that the transistor is intended for general electronic equipment rather than applications requiring specialized reliability.

Uploaded by

kere hore
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon PNP Power Transistor 2SA1486

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·With TO-126 package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for low frequency power amplifiers applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -600 V

VCEO Collector-Emitter Voltage -600 V

VEBO Emitter-Base Voltage -7 V

IC Collector Current-Continuous -1 A

ICM Collector Current-Peak -2 A

Collector Power Dissipation


1
@Ta=25℃
PC W
Collector Power Dissipation
10
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon PNP Power Transistor 2SA1486

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE=∞ -600 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A -1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A -1.2 V

ICBO Collector Cutoff Current VCB= -600V; IE= 0 -10 μA

IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA

hFE -1 DC Current Gain IC= -0.1A; VCE= -5V 30 120

hFE -2 DC Current Gain IC= -0.5A; VCE= -5V 5

 hFE -1Classifications

M L K

30-60 40-80 60-120

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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