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Experiment-No 2

The document describes an experiment to plot the volt-ampere characteristics of silicon and germanium diodes by applying varying forward and reverse voltages and measuring the current. Static and dynamic resistances are calculated from the resulting V-I graphs. Key specifications and the theory of PN junction diodes, including cut-in voltage and factors that influence their properties, are provided.

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carlo
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902 views5 pages

Experiment-No 2

The document describes an experiment to plot the volt-ampere characteristics of silicon and germanium diodes by applying varying forward and reverse voltages and measuring the current. Static and dynamic resistances are calculated from the resulting V-I graphs. Key specifications and the theory of PN junction diodes, including cut-in voltage and factors that influence their properties, are provided.

Uploaded by

carlo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment No:2

V - I Characteristics of Si, Ge Diodes


Aim:
1. To plot Volt-Ampere Characteristics of Silicon and Germanium P-N Diode.
2. To find cut-in voltage for Silicon and Germanium P-N Junction diode.
3. To find static and dynamic resistances in both forward and reverse biased conditions.

Components:

Name Quantity
Diodes 1N4007(Si) 1
Diodes DR-25(Ge) not 1
available in multisim
Resistor 1K 1
Resistor 3.3K 1

Equipment:

Name Range Quantity


Bread board 1
Regulated power 0-30V 1
supply
Digital Ammeter 0-200μA/200mA 1
Digital Voltmeter 0-20V 1
Connecting Wires

Specifications:
Silicon Diode 1N4007:
Max Forward Current = 1A
Max Reverse Current = 5.0μA
Max Forward Voltage = 0.8V
Max Reverse Voltage = 1000V
Max Power Dissipation = 30mW
Temperature = -65 to 200° C
Theory:
Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into the other
side of a single crystal of an intrinsic semiconductor to form a p-n diode with a junction called
depletion region (this region is depleted off the charge carriers). This region gives rise to a potential
barrier called Cut-in Voltage. This is the voltage across the diode at which it starts conducting. The
P-N junction can conduct beyond this potential.
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected the cathode. Then
diode is said to be forward biased. In this condition the height of the potential barrier at the junction
is lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and
electrons from n-side cross the junction simultaneously and constitute a forward current from n-side
(injected minority current – due to holes crossing the junction and entering P- side of the diode).
Assuming current flowing through the diode to be very large, the diode can be approximated as
short- circuited switch.
If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the input
supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this condition
an amount equal to reverse biasing voltage increases the height of the potential barrier at the junction.
Both the holes on P-side and electrons on N-side tend to move away from the junction there by
increasing the depleted region. However the process cannot continue indefinitely, thus a small
current called reverse saturation current continues to flow in the diode. This current is negligible
hence the diode can be approximated as an open circuited switch.
The volt-ampere characteristics of a diode explained by the following equations:

Where , I = current flowing in the diode, I0 = reverse saturation current


VD = Voltage applied to the diode
VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp)
h = 1(for Ge) and 2 (for Si)

It is observed that Ge diodes has smaller cut-in-voltage when compared to Si diode. The reverse
saturation current in Ge diode is larger in magnitude when compared to silicon diode.
Theoretically the dynamic resistance of a diode is determined using the following equation:
Dynamic Resistance:

Circuit Diagrams:

Fig. (1) - Forward Bias Condition

Fig. (2) - Reverse Bias Condition


Procedure:
Forward Bias Condition:
1. Connect the components as shown in the circuit diagram (1).
2. Vary the supply voltage such that the voltage across the Silicon diode varies from 0 to 0.6 V in
steps of 0.1 V and in steps of 0.02 V from 0.6 to 0.76 V. In each step record the current flowing
through the diode as I.
3. Repeat the above steps for Germanium diode too but with the exception that the voltage across the
diode should be varied in steps of 0.01 V from 0.1 to 0.3 V in step-2.

Reverse Bias Condition:


1. Connect the diode in the reverse bias as shown in the circuit diagram (2)
2. Vary the supply voltage such that the voltage across the diode varies from 0 to 10V in steps of 1 V.
Record the current flowing through the diode in each step.
3. Repeat the above steps for Germanium diode too and record the current in each step.
4. Now plot a graph between the voltage across the diode and the current flowing through the diode
in forward and reverse bias, for Silicon and Germanium diodes on separate graph sheets. This graph
is called the V-I characteristics of the diode.
5. Calculate the static and dynamic resistance of each diode in forward and reverse bias using the
following formulae.
Static resistance, R = V/I
Dynamic resistance, r = ΔV/ΔI
Observations:

(a) Forward and Reverse bias characteristics of Silicon diode

Forward Bias Condition:

No. Forward Voltage across the diode Forward Current through the diode
Vd (Volt) Id (mA)
1
2
3
4
5
6
7
8
9
10
Reverse Bias Condition:

No. Reverse Voltage across the diode Reverse Current through the diode
VR (Volt) IR (μA)
1
2
3
4
5
6
7
8
9
10

Graph:
1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet.
2. Now mark +ve X-axis as Vf, -ve X-axis as VR, +ve Y-axis as If and –ve Y-axis as IR.

3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse biased
condition in third Quadrant.
4. Repeat the same procedure for plotting the Germanium characteristics.
Calculations from Graph:

Static forward Resistance Static Reverse Resistance

Rf = Vf / If Rr = Vr / Ir
Dynamic Forward Resistance Dynamic Reverse Resistance

rac = ΔVf/ΔIf rac = ΔVr/ΔIr


Precautions:
1. While doing the experiment do not exceed the readings of the diode. This may lead to damaging of
the diode.

2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per the
circuit diagram.

Result:
Cut in voltage = ____ V
Static Forward Resistance = ______ Ω
Dynamic Forward Resistance = ______ Ω
Static Reverse Resistance = ______ Ω
Dynamic Reverse Resistance = ______ Ω

Answer the following questions:


1. What are trivalent and pentavalent impurities?
2. How PN junction diode does acts as a switch?
3. Diode current equation?
4. What is the value of Vt at room temperature?
5. What is cut-in-voltage ?
6. Dynamic resistance expression?

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