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Physics of Semiconductor Devices Homework Examples

Homework #3 1. For an ideal silicon p-n abrupt junction with NA =1017 cm-3 and ND =1015cm-3 , (a) calculate Vbi at 250, 300, 350, 400, 450, and 500 K and plot Vbi versus T; (b) comment on your result in terms of energy band diagram; and (c) find the depletion layer width and the maximum field at zero bias for T =300 K. 2. Determine the n-type doping concentration to meet the following specifications for a Si p-n junction: NA=1018 cm-3,  max = 4×105 V/cm at VR=30 V, T = 300K. 3. An abrupt p-n ju

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Physics of Semiconductor Devices Homework Examples

Homework #3 1. For an ideal silicon p-n abrupt junction with NA =1017 cm-3 and ND =1015cm-3 , (a) calculate Vbi at 250, 300, 350, 400, 450, and 500 K and plot Vbi versus T; (b) comment on your result in terms of energy band diagram; and (c) find the depletion layer width and the maximum field at zero bias for T =300 K. 2. Determine the n-type doping concentration to meet the following specifications for a Si p-n junction: NA=1018 cm-3,  max = 4×105 V/cm at VR=30 V, T = 300K. 3. An abrupt p-n ju

Uploaded by

wazwy
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© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Homework #3 1.

For an ideal silicon p-n abrupt junction with NA =1017 cm-3 and ND =1015cm-3 , (a) calculate Vbi at 250, 300, 350, 400, 450, and 500 K and plot Vbi versus T; (b) comment on your result in terms of energy band diagram; and (c) find the depletion layer width and the maximum field at zero bias for T =300 K. 2. Determine the n-type doping concentration to meet the following specifications for a Si p-n junction: NA=1018 cm-3, max = 4105 V/cm at VR=30 V, T = 300K. 3. An abrupt p-n junction has a doping concentration of 1015, 1016, 1017 cm-3 on the lightly doped n-side and of 1019 cm-3 on the heavily doped p-side. Obtain series of curves of 1/C2 versus V, where V ranges from -4 V to 0 V in steps of 0.5 V. Comment on the slopes and the interceptions at the voltage axis of these curves. A one-sided p+-n Si junction at 300 K is doped with NA = 1019cm-3. Design the junction so that Cj = 0.85pF at VR = 4.0 V . Consider a Si p-n junction with n-type doping concentration of 1016 cm-3 and is forward biased with V = 0.8 V at 300 K. Calculate the minority-carrier hole concentration at the edge of the space charge region. Calculate the applied reverse-bias voltage at which the ideal reverse current in a p-n junction diode at T = 300 K reaches 95% of its reverse saturation current value. An ideal silicon p-n junction has ND = 1018 cm-3 , NA = 1016 cm-3 , p n = 10-6 s, and a device area of 1.210-5 cm2. (a) Calculate the theoretical saturation current at 300 K. (b) Calculate the forward and reverse currents at 0.7 V. 8. 9. In Prob. 7, assume the widths of the two sides of the junction are much greater .at a forward current of 1 mA at 300 K. A silicon p+-n junction has the following parameters at 300 K: p g = 10-6 s , ND= 1015 cm-3, NA = 1019 cm-3 . (a) Plot diffusion current density, Jgen (=qniW/g), and total current density versus applied reverse voltage. (b) Repeat the above results for ND = 1017 cm-3. Note: Jgen is the generation current density occurring in the depletion region where pn<ni2 at reverse bias. 10. For an ideal abrupt silicon p+-n junction with ND = 1016 cm-3, find the stored minority carriers per unit area in the neutral n-region when a forward bias of 1 V is applied. The length of neutral region is 1 m and the diffusion length of the holes is 5m. 11. The avalanche breakdown voltage increases with increasing temperature. Give a qualitative argument for the result.

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