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2SC5343

This document provides information about the 2SC5343 NPN silicon transistor. It is described as a general small signal amplifier with low collector saturation voltage of 0.25V max and low output capacitance of 2pF typical. It also lists the transistor's absolute maximum ratings, electrical characteristics such as DC current gain and collector-emitter saturation voltage, and provides dimension drawings and pin connections. Graphs of several electrical characteristic curves are also included.

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Abigail Hoobs
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135 views3 pages

2SC5343

This document provides information about the 2SC5343 NPN silicon transistor. It is described as a general small signal amplifier with low collector saturation voltage of 0.25V max and low output capacitance of 2pF typical. It also lists the transistor's absolute maximum ratings, electrical characteristics such as DC current gain and collector-emitter saturation voltage, and provides dimension drawings and pin connections. Graphs of several electrical characteristic curves are also included.

Uploaded by

Abigail Hoobs
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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com

Semiconductor 2SC5343
NPN Silicon Transistor

Description
• General small signal amplifier

Features
• Low collector saturation voltage : VCE(sat)=0.25V(Max.)
• Low output capacitance : Cob=2pF(Typ.)
• Complementary pair with 2SA1980

Ordering Information
Type NO. Marking Package Code

2SC5343 C5343 TO-92

Outline Dimensions unit : mm

3.45±0.1
4.5±0.1
2.25±0.1
4.5±0.1

0.4±0.02
2.06±0.1
14.0±0.40

1.27 Typ.

2.54 Typ.

1 2 3
1.20±0.1

PIN Connections
0.38

1. Emitter
2. Collector
3. Base

KST-9005-002 1
www.DataSheet4U.com

2SC5343

Absolute maximum ratings (Ta=25°°C)


Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage VCEO 50 V
Emitter-Base voltage VEBO 5 V
Collector current IC 150 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -55~150 °C

Electrical Characteristics (Ta=25°°C)


Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 60 - - V
Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 50 - - V
Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V
Collector cut-off current ICBO VCB=60V, IE=0 - - 0.1 µA
Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA
*
DC current gain hFE VCE=6V, IC=2mA 70 - 700 -
Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V
Transistion frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF
VCE=6V, IC=0.1mA,
Noise figure NF - - 10 dB
f=1KHz, Rg=10KΩ
* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700

KST-9005-002 2
www.DataSheet4U.com

2SC5343
Electrical Characteristic Curves
Fig. 1 PC –Ta Fig. 2 IC -VBE

Fig. 3 IC -VCE Fig. 4 hFE -IC

Fig. 5 VCE(sat) -IC

KST-9005-002 3

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