IMZA65R083M1H

MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice PG-TO247-4-3

The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology
developedinInfineoninmorethan20years.Leveragingthewidebandgap
SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique Tab

combinationofperformance,reliabilityandeaseofuse.Suitableforhigh
temperatureandharshoperations,itenablesthesimplifiedandcost 1
effectivedeploymentofthehighestsystemefficiency. 23
4

Features
•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQrr
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior Drain
•LowerRDS(on)andpulsecurrentdependencyontemperature Pin 1, Tab

•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V) Gate
*1

•Kelvinsourceprovidesupto4timeslowerswitchinglosses Pin 4
Driver
Source
Power
Pin 3
Benefits *1: Internal body diode
Source
Pin 2
•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustnessandsystemreliability
•Efficiencyimprovement
•Reducedsystemsizeleadingtohigherpowerdensity

Potentialapplications
•SMPS
•UPS(uninterruptablepowersupplies)
•SolarPVinverters
•EVcharginginfrastructure
•Energystorageandbatteryformation
•ClassDamplifiers

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceanddriversourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS@TJ=25°C 650 V
RDS(on),typ 83 mΩ
RDS(on),max 111 mΩ
QG,typ 19 nC
ID,pulse 59 A
Qoss@400V 44 nC
Eoss@400V 6.6 µJ

Type/OrderingCode Package Marking RelatedLinks

IMZA65R083M1H PG-TO247-4-3 65R083M1 see Appendix A

Final Data Sheet 1 Rev.2.0,2021-03-17

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet 2 Rev.2.0,2021-03-17

 650VCoolSiCªM1SiCTrenchPowerDevice
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1Maximumratings
atTJ=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 26 TC=25°C
Continuous drain current1) ID A
- - 18 TC=100°C
Pulsed drain current2) ID,pulse - - 59 A TC=25°C
ID=3.6A,VDD=50V,L=14.7mH;
Avalanche energy, single pulse EAS - - 95 mJ
see table 10
Avalanche energy, repetitive EAR - - 0.48 mJ ID=3.6A,VDD=50V;seetable10
Avalanche current, single pulse IAS - - 3.6 A -
MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V
Gate source voltage (static) VGS -2 - 20 V static
Gate source voltage (recommended
VGS 0 - 18 V -
driving voltage)
tpulse,negative<=15ns
Gate source voltage (dynamic) VGS -5 - 23 V
tpulse,positive<=1%dutycycle/fsw
Power dissipation Ptot - - 104 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature TJ -55 - 175 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current1) IS - - 26 A TC=25°C
Diode pulse current 2)
IS,pulse - - 59 A TC=25°C
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
LimitedbyTJ,max
2)
PulsewidthtplimitedbyTJ,max
Final Data Sheet 3 Rev.2.0,2021-03-17
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2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.44 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W n.a.
for SMD version
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 4 Rev.2.0,2021-03-17

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3Electricalcharacteristics
atTJ=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=0.33mA
Gate threshold voltage1) V(GS)th 3.5 4.5 5.7 V VDS=VGS,ID=3.3mA
- 1 150 VDS=650V,VGS=0V,TJ=25°C
Zero gate voltage drain current IDSS µA
- 3 - VDS=650V,VGS=0V,TJ=175°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.083 0.111 VGS=18V,ID=11.2A,TJ=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.116 - VGS=18V,ID=11.2A,TJ=175°C
Gate resistance RG - 10.0 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 624 - pF VGS=0V,VDS=400V,f=250kHz
Reverse capacitance Crss - 8 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance 2)
Coss - 73 95 pF VGS=0V,VDS=400V,f=250kHz
Output charge 2)
Qoss - 44 57 nC calculationbasedonCoss
Effective output capacitance, energy VGS=0V,
Co(er) - 82 - pF
related3) VDS=0...400V
Effective output capacitance, time ID=constant,VGS=0V,
Co(tr) - 109 - pF
related4) VDS=0...400V
VDD=400V,VGS=18V,ID=11.2A,
Turn-on delay time td(on) - 10.0 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=18V,ID=11.2A,
Rise time tr - 7.0 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=18V,ID=11.2A,
Turn-off delay time td(off) - 14.0 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=18V,ID=11.2A,
Fall time tf - 7.0 - ns
RG=1.8Ω;seetable9

1)
Testedafter1mspulseatVGS=+20V
2)
Maximumspecificationisdefinedbycalculatedsixsigmaupperconfidencebound
3)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
4)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2021-03-17
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Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
VDD=400V,ID=11.2A,
Gate to source charge Qgs - 5 - nC
VGS=0to18V
VDD=400V,ID=11.2A,
Gate to drain charge Qgd - 4 - nC
VGS=0to18V
VDD=400V,ID=11.2A,
Gate charge total Qg - 19 - nC
VGS=0to18V

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 4.0 - V VGS=0V,IF=11.2A,TJ=25°C
VR=400V,IF=11.2A,
Reverse recovery time trr - 22 - ns
diF/dt=1000A/µs;seetable8
VR=400V,IF=11.2A,
Reverse recovery charge Qrr - 82 - nC
diF/dt=1000A/µs;seetable8
VR=400V,IF=11.2A,
Peak reverse recovery current Irrm - 7.5 - A
diF/dt=1000A/µs;seetable8

Final Data Sheet 6 Rev.2.0,2021-03-17

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
120 102
1 µs

100 10 µs
101

80 100 µs

100
Ptot[W]

ID[A]
60 1 ms

10-1 10 ms

40 DC

10-2
20

0 10-3
0 25 50 75 100 125 150 175 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

1 µs

101
10 µs

100
100 µs 0.5
100
ZthJC[K/W]
ID[A]

0.2

1 ms 0.1
10-1
0.05
10 ms 10-1 0.02
DC 0.01

10-2 single pulse

10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2021-03-17

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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
100 100
20 V

20 V

80 80
18 V
18 V

60 60
ID[A]

ID[A]
15 V
15 V
40 40

12 V
12 V
20 20
10 V
10 V
8V
8V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.250 2.0

0.225

10 V 12 V 15 V 18 V 20 V
0.200 1.5
RDS(on)[normalized]
RDS(on)[Ω]

0.175

0.150 1.0

0.125

0.100 0.5
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 175
ID[A] TJ[°C]
RDS(on)=f(ID);Tj=150°C;parameter:VGS RDS(on)=f(Tj);ID=11.2A;VGS=18V

Final Data Sheet 8 Rev.2.0,2021-03-17

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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
100 20

18

80 16

14

60 12

VGS[V]
ID[A]

10
400 V

40 8

6
150 °C 25 °C
20 4

0 0
0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=11.2Apulsed;parameter:VDD

Diagram11:Typ.forwardcharacteristicsofreversediode Diagram12:Typ.channelreversecharacteristics
2
10 102

25 °C

150 °C 25 °C
101 101
IF[A]

IF[A]

150 °C

100 100

10-1 10-1
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VSD[V] VSD[V]
IF=f(VSD);parameter:Tj IF=f(VSD);VGS=18V;parameter:Tj

Final Data Sheet 9 Rev.2.0,2021-03-17

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram13:Avalancheenergy Diagram14:Drain-sourcebreakdownvoltage
100 690

90

680
80

70
670

60
EAS[mJ]

VBR(DSS)[V]
50 660

40

650
30

20
640

10

0 630
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ[°C] TJ[°C]
EAS=f(Tj);ID=3.6A;VDD=50V VBR(DSS)=f(Tj);ID=0.33mA

Diagram15:Typ.capacitances Diagram16:Typ.Cossstoredenergy
4
10 10

8
103
Ciss

6
Eoss[µJ]
C[pF]

102
Coss
4

101
Crss
2

100 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=250kHz Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2021-03-17

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram17:Typ.Qossoutputcharge
60

50

40
Qoss[nC]

30

20

10

0
0 50 100 150 200 250 300 350 400 450 500
VDS[V]
Qoss=f(VDS)

Final Data Sheet 11 Rev.2.0,2021-03-17

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5TestCircuits

Table8Diodecharacteristics(ss)(SiC)
Test circuit for diode characteristics Diode recovery waveform

RG2 VDS

-
IF

RG1

Table9Switchingtimes(ss)(SiC)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS 10%
VGS
VGS
td(on) tr td(off) tf
RG
ton toff

Table10Unclampedinductiveload(ss)(SiC)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID
VDS

VDS VDS
ID

Final Data Sheet 12 Rev.2.0,2021-03-17

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6PackageOutlines

MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.90 5.10
A1 2.31 2.51
A2 1.90 2.10
A3 0.05 0.25
b 1.10 1.30
b1 0.65 0.79
b2 - 0.20
b3 1.34 1.44
c 0.58 0.66
D 20.90 21.10
D1 16.25 16.85
DOCUMENT NO.
D2 1.05 1.35
Z8B00184785
D3 24.97 25.27
D4 4.90 5.10 REVISION
E 15.70 15.90 03
E1 13.10 13.50
E2 2.40 2.60 SCALE 2:1
e1 5.08 0 5 10mm
e2 2.79
e3 2.54
L 19.80 20.10
L1 - 4.30 EUROPEAN PROJECTION
øP 3.50 3.70
øP1 7.00 7.40
øP2 2.40 2.60
Q 5.60 6.00
S 6.15
T 9.80 10.20 ISSUE DATE
U 6.00 6.40 21.08.2017

Figure1OutlinePG-TO247-4-3,dimensionsinmm

Final Data Sheet 13 Rev.2.0,2021-03-17

 650VCoolSiCªM1SiCTrenchPowerDevice
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7AppendixA

Table11RelatedLinks
• IFXCoolSiCM1Webpage:www.infineon.com

• IFXCoolSiCM1applicationnote:www.infineon.com

• IFXCoolSiCM1simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 14 Rev.2.0,2021-03-17

 650VCoolSiCªM1SiCTrenchPowerDevice
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RevisionHistory
IMZA65R083M1H

Revision:2021-03-17,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2021-03-17 Release of final version

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 15 Rev.2.0,2021-03-17