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    ST 2310 Dhi

    Uploaded by

    gabriel tabernero

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    ST 2310 Dhi

    Uploaded by

    gabriel tabernero
    69 views6 pages

    Original Title

    st2310dhi

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    © © All Rights Reserved

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    69 views6 pages

    ST 2310 Dhi

    Uploaded by

    gabriel tabernero

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 6

    ® ST2310DHI

    HIGH VOLTAGE FAST-SWITCHING


    NPN POWER TRANSISTOR

    ■ NEW SERIES, ENHANCED PERFORMANCE


    ■ FULLY INSULATED PACKAGE (U.L.
    COMPLIANT) FOR EASY MOUNTING
    ■ INTEGRATED FREE WHEELING DIODE
    ■ HIGH VOLTAGE CAPABILITY (> 1500 V)
    ■ HIGH SWITCHING SPEED
    ■ TIGTHER hfe CONTROL
    ■ IMPROVED RUGGEDNESS
    3
    2
    APPLICATIONS: 1
    ■ HORIZONTAL DEFLECTION HIGH END TVS

    DESCRIPTION ISOWATT218
    The device is manufactured using Diffused
    Collector technology for more stable operation Vs
    base drive circuit variations resulting in very low
    worst case dissipation.

    INTERNAL SCHEMATIC DIAGRAM

    RBE =32 Ω
    Typ.

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CES Collector-Emitter Voltage (V BE = 0) 1500 V
    V CEO Collector-Emitter Voltage (I B = 0) 600 V
    V EBO Emitter-Base Voltage (I C = 0) 7 V
    IC Collector Current 12 A
    I CM Collector Peak Current (t p < 5 ms) 25 A
    IB Base Current 7 A
    P tot Total Dissipation at T c = 25 o C 55 W
    V isol Insulation Withstand Voltage (RMS) from All 2500 V
    Three Leads to External Heatsink
    o
    T stg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C

    April 2003 1/6


    ST2310DHI

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 2.3 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CES Collector Cut-off V CE = 1500 V 1 mA
    Current (V BE = 0) V CE = 1500 V T J = 125 o C 2 mA
    I EBO Emitter Cut-off Current V EB = 4 V 70 210 mA
    (I C = 0)
    V (BR)EBO Emitter-Base I E = 800 mA 7 V
    Breakdown Voltage
    (I C = 0)
    V CE(sat) ∗ Collector-Emitter IC = 7 A I B = 1.75 A 3 V
    Saturation Voltage
    V BE(sat) ∗ Base-Emitter IC = 7 A I B = 1.75 A 1.1 V
    Saturation Voltage
    h FE ∗ DC Current Gain IC = 1 A V CE = 5 V 15
    IC = 7 A V CE = 1 V 5
    IC = 7 A V CE = 5 V 5.5 8.5
    INDUCTIVE LOAD IC = 5 A f = 32 KHz
    ts Storage Time I B(on) = 0.9 A V BE(off) = -2.5 V 2 2.5 µs
    tf Fall Time L BB(off) = 1.9 µH (see figure 1) 0.25 0.5 µs
    Vf Diode Forward Voltage I C = 7 A 1.5 2.2 V
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

    Safe Operating Area Thermal Impedance

    2/6
    ST2310DHI

    Derating Curve Output Characteristics

    Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

    DC Current Gain DC Current Gain

    3/6
    ST2310DHI

    Power Losses Switching Time Inductive Load

    Reverse Biased SOA

    Figure 1: Inductive Load Switching Test Circuit.

    4/6
    ST2310DHI

    ISOWATT218 NARROW LEADS MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 5.35 5.65 0.211 0.222
    C 3.30 3.80 0.130 0.150
    D 2.90 3.10 0.114 0.122
    D1 1.88 2.08 0.074 0.082
    E 0.75 0.95 0.030 0.037
    F 0.75 0.95 0.030 0.037
    F2 1.50 1.70 0.059 0.067
    F3 1.90 2.10 0.075 0.083
    F5 1.10 0.043
    G 10.80 11.20 0.425 0.441
    H 15.80 16.20 0.622 0.638
    L 9 0.354
    L1 20.80 21.20 0.819 0.835
    L2 19.10 19.90 0.752 0.783
    L3 22.80 23.60 0.898 0.929
    L4 40.50 42.50 1.594 1.673
    L5 4.85 5.25 0.191 0.207
    L6 20.25 20.75 0.797 0.817
    N 2.1 2.3 0.083 0.091
    R 4.6 0.181
    DIA 3.5 3.7 0.138 0.146

    - Weight : 4.9 g (typ.)


    - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
    - The side of the dissipator must be flat within 80 µm P025C/B

    5/6
    ST2310DHI

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

    © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

    http://www.st.com

    6/6

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