Lab Report On MOSFET and BJT Transistor
Lab Report On MOSFET and BJT Transistor
Laboratory #2:
GR #:
Name ID #
Prepared By:
The lab should be done having two students to a group, Lab with more than two or less will
not be marked. Late submission of Labs will also not be marked
………………………………………………..
………………………………………………..
………………………………………………..
1
1.0 INSTRUCTIONS TO THE STUDENTS
2.1 AIM
[1] Plot the input and output characteristics of a transistor connected in Common Base
configuration.
[2] To calculate , and of ZTX300 Transistor given in figure 1
[3] To understand the effect in transistor at different voltage level through using variable
resistor
2
2.2 THEORY
A transistor is a three terminal active device. The terminals are emitter, base, collector. In CB
configuration, the base is common to both input (emitter) and output (collector). For normal
operation, the E-B junction is forward biased and C-B junction is reverse biased. In CB
configuration, is positive, negative and is negative
So, f1 and f2
With an increasing the reverse collector voltage, the space-charge width at the output junction
increases and the effective base width decreases. This phenomenon is known as “Early
effect”. Then, there will be less chance for recombination within the base region. With
increase of charge gradient within the base region the current of minority carriers injected
across the emitter junction increases
3.0 PROCEDURE
[1] Draw the schematic diagram in figure 1 using protus software with the Lab
components given above
[2] Take maximum source voltage
[3] While keeping the maximum source voltage constant, use the variable resistor from
1k𝝮 -10k𝝮 to vary the Source voltage
[4] Get the reading from the simulation as you vary the variable resistor and enter down
them in the table provided accordingly
[5] Do hand calculations to confirm the values obtain in your simulation? Let
for ZTX300 Transistor to calculate , and and the formulas
used are :
a.
b.
c.
d.
e.
3
4.0 PRE LAB QUESTIONS
Figure 1
5.0 RESULTs
Figure 2
4
5.1 Lab Exercise 1
Fill in the table accordingly with the data collected in your simulation. Note that in a real
experiment, 0𝝮 is not allowed because it will burn off the transistor
Table 1
15 0
1
2
3
4
5
6
7
8
9
10
Do hand calculations to confirm the values obtain in your simulation? Let for
ZTX300 Transistor to calculate , and and the formulas used are :
[1]
[2]
[3]
[4]
[5]
Title (1Mks)
Objective/Aim (1Mk)
Theory (2Mk)
Discussion or explanation on Pre lab and Post Lab questions (`5 Mks)
Task – results and explanation (20 Mks)
Reference (1Mk)
The Lab should be written in this order. The marks will be deducted if the format is not
followed
>>>>>>>>>>>>>>>>>>>>>>>>>>>>end>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>