Class: XII

SESSION : 2022-2023
MARKING SCHEME
CBSE SAMPLE QUESTION PAPER (THEORY)
SUBJECT: PHYSICS

Q.no Marks
SECTION A
1 (ii) q1q2<0 1
2 (iv) zero 1
3 (ii) material A is germanium and material B is copper 1
4 (iv) 6A in the clockwise direction 1
5 (iii) 4:3 1
6 (i) decreases 1
7 (ii) increase 1
8 (iv) Both electric and magnetic field vectors are parallel to each 1
other.
9 (ii) the circular and elliptical loops 1
10 (iv) 0.85 1
11 (iii) 3000 Å 1
12 (iv) 4.77 X 10-10m 1
13 (ii) The nuclear force is much weaker than the Coulomb force . 1
14 (i) 30 V 1
15 (i) 1
16 c) A is true but R is false 1
17 c) A is true but R is false 1
18 a) Both A and R are true and R is the correct explanation of A 1
SECTION B
19 λ1 -Microwave ½
λ2 - ultraviolet ½
λ3- infrared ½
Ascending order - λ2<λ3<λ1 ½
20 A - diamagnetic ½
B- paramagnetic ½
The magnetic susceptibility of A is small negative ½
and that of B is small positive. ½
21 From the relation R = R0A1/3, where R0 is a constant and A is the mass ½
number of a nucleus
R Fe/RAl = (AFe/AAl)⅓

= (125/27)⅓ ½
R Fe = 5/3 RAl
=5/3 x 3.6 ½
= 6 fermi ½
OR
Given short wavelength limit of Lyman series
 1 1 1
=𝑅 −
 1 ∞
1 1 1 ½
=𝑅 −
913.4 Å 1 ∞

L = = 913.4 Å ½

For the short wavelength limit of Balmer series

n1=2, n2 = ∞ ½
1 1 1
=𝑅 −
 2 ∞

 = = 4 x 913.4 Å ½
= 3653.6 Å
22 1 1 1 ½
= (µ − 1) −
𝑓 𝑅 𝑅
1 µ 1 1 ½
= −1 −
𝑓 µ 𝑅 𝑅
µ 1.25
=
µ 1.33
µ ½
= 0.98
µ
The value of (µ – 1) is negative and ‘f’ will be negative. So it will behave ½
like diverging lens.
23 To keep the reading of ammeter constant value of R should be increased 1
as with the increase in temperature of a semiconductor, its resistance
decreases and current tends to increase. 1

OR
B - reverse biased ½
In the case of reverse biased diode the potential barrier becomes higher
as the battery further raises the potential of the n side. ½

C -forward biased ½
Due to forward bias connection the potential of P side is raised and hence
the height of the potential barrier decreases. ½

24 Angular width 2φ = 2λ/d ½

Given λ = 6000 Å
In Case of new λ (assumed λ’ here), ½
angular width decreases by 30%
New angular width = 0.70 (2 φ) ½
2 λ’/d = 0.70 X (2 λ/d)
∴λ’= 4200 Å ½
25

Surface charge density of plate A = +17.7 × 10–22 C/m2

Surface charge density of plate B = -17.7 × 10–22 C/m2

½
(a) In the outer region of plate I, electric field intensity E is zero.
½
(b)Electric field intensity E in between the plates is given by relation

E=

Where,
 = Permittivity of free space = 8.85 x10-12 N-1 C2 m-2

17.7 𝑥 10 ½
∴𝐸=
8.85 𝑥 10
½
-10
Therefore, electric field between the plates is 2.0 x 10 N/C
SECTION C
26 Diagram ½
Derivation 1½
The ampere is the value of that steady current which, when maintained in
each of the two very long, straight, parallel conductors of negligible 1
cross-section, and placed one metre apart in vacuum, would exert on
each of these conductors a force equal to 2 × 10–7newtons per metre of
length.
27 Area of the circular loop = 𝑟
= 3.14 × (0.12)2 m2 = 4.5 × 10–2 m2
E=– =– (BA) = –A = –A . ½

For 0 < t < 2s

E1 = – 4.5 × 10–2 × = –2.25 × 10–2 V
. ×
 I1 = = A = – 2.6 × 10–3 A = –2.6 mA ½
.

For 2s < t < 4s,

E2 = – 4.5 × 10–2 × =0 ½

 I2 = =0
For 4s < t < 6s,
. ×
I3 = – × A = 2.6 mA ½
.
 0<t<2s 2<t<4s 4<t<6s
E(V) -0.023 0 +0.023
I(mA) -2.6 0 +2.6

28 Derivation 2

OR
Derivation
2

29 From the observations made (parts A and B) on the basis of Einstein’s

photoelectric equation, we can draw following conclusions:
1. For surface A, the threshold frequency is more than 1015 HZ, 1
hence no photoemission is possible.
2. For surface B the threshold frequency is equal to the frequency of 1
given radiation. Thus, photo-emission takes place but kinetic
energy of photoelectrons is zero.
3. For surface C, the threshold frequency is less than 1015 Hz. So 1
photoemission occurs and photoelectrons have some kinetic
energy

OR
a) A - cut off or stopping potential ½
X - anode potential ½
 1

b)

c)

30 For a transition from n=3 to n =1 state, the energy of the emitted photon, 1
h𝑣 = E2 –E1 = 13.6 [ − ] eV = 12.1 eV.
½
From Einstein’s photoelectric equation,
h𝑣 = 𝐾 + W0
½
∴ 𝑊 = ℎ𝑣 − 𝐾 = 12.1 − 9 = 3.1 𝑒𝑉
Threshold wavelength, 1
. -7
λth = = = 4x10 m
. .

SECTION D
31(a) 1+1

Here, A =6 x 10-3 m2, d =3mm=3x10-3m

(i) Capacitance, C=∈0A/d = (8.85x10-12 x 6x10-3/3x10-3) = 17.7x10-12 F
(b) 1
(ii) Charge, Q = CV =17.7 x10-12x100=17.7x10-10C
1
(iii) New charge Q’= KQ=6x17.7 x10-10 =1.062 x 10-8 C
1
OR
(a) 1/2
Diagram
 ( ) ( ) ( )( )
+ + =0
1

+ = 0 or =

q = 4Q or = ½

(b) Electric field due to a uniformly charged thin spherical shell:

(i) When point P lies outside the spherical shell: Suppose that we have
calculate field at the point P at a distance r (r>R) from its centre. Draw
Gaussian surface through point P so as to enclose the charged spherical
shell. Gaussian surface is a spherical surface of radius r and centre O.

Let 𝐸⃗ be the electric field at point P, then the electric flux through area
element of area 𝑑𝑠⃗ is given by
𝑑φ = 𝐸⃗ . 𝑑𝑠⃗ ½
Since 𝑑𝑠⃗ is also along normal to the surface
𝑑φ= E dS
∴ Total electric flux through the Gaussian surface is given by

φ = ∮ Eds = E ∮ ds
Now, ∮ ds = 4 𝜋 r2 ...(i)
= Ex4 𝜋 r2
Since the charge enclosed by the Gaussian surface is q, according to the
Gauss’s theorem,
φ = ........(ii) ½
∈
From equation (i) and (ii) we obtain

E x 4 𝜋r2 =
∈
E= . (for r>R) ½
∈
(ii)

1
32(a) Drift velocity: It is the average velocity acquired by the free electrons ½
superimposed over the random motion in the direction opposite to
electric field and along the length of the metallic conductor.
Derivation I = ne A Vd 1½

(b) Here, I = I1 + I2 ...(i)

Let V = Potential difference between A and B.
For cell 1
1  V
Then, V= 1 – I1 r1  I1 
r1

2  V
Similarly, for cell 2 I2 
r2
Putting these values in equation (i)
1  V  2  V
I 
r1 r2
   1 1
or I   1  2  V   
 r1 r2   r1 r2 
  r   2 r1   rr 
or V  1 2  I 1 2  ...(ii)
 r1  r2   r1  r2 
Comparting the above equation with the equivalent circuit of emf ‘eq’
and internal resistance ‘req’ then,
V  eq  Ireq ...(iii)
Then
1r2   2 r1 r1 r2
(i)  eq  (ii) req 
r1  r2 r1  r2
(iii) The potential difference between A and B
V  eq  Ireq
OR
(a) Junction rule: At any junction, the sum of the currents entering the 1
junction is equal to the sum of currents leaving the junction

Loop rule: The algebraic sum of changes in potential around any closed 1
loop involving resistors and cells in the loop is zero
(b) Derivation 3
33(a) 1

Width of central maximum is twice that of any secondary maximum 1

1
(b)

Given : ∠A = 600, ∠i=00

√
At M : Sin C = = = sin 600
∴ C = 600 1
So the ray PM after refraction from the face AC grazes along AC.
∴ ∠ e=900
From ∠i +∠e=∠A + ∠ 𝛿
Or 00 +900 = 600 + ∠𝛿

∴ 𝛿 =900 – 600 = 300 1

OR
(i) The interference pattern has a number of equally spaced bright and
(a) 1
dark bands. The diffraction pattern has a central bright maximum which
is twice as wide as the other maxima. The intensity falls as we go to
successive maxima away from the centre, on either side.

(ii) We calculate the interference pattern by superposing two waves

originating from the two narrow slits. The diffraction pattern is a 1
superposition of a continuous family of waves originating from each
point on a single slit.

(b)  A  m   60  30 
sin   sin  
2   2 
(i)      2 1½
 A  60º 
sin   sin  
2  2 
c 3  108
Also    m/ s
 2
 (ii) At face AC, let the angle of
incidence be r2. For grazing ray,
e = 90º
1  1 
   r2  sin 1   = 45º 1½
sin r2  2
Let angle of refraction at face AB be r1.
Now r1 + r2 = A
 r1 = A – r2 = 60º – 45º = 15º
Let angle of incidence at this face be i
sin i sin i
  2
sin r1 sin 15º
 i  sin1  
2 . sin 15º =21.50

SECTION E
34(i) When the image is formed at infinity, we can see it with minimum strain 1
in the ciliary muscles of the eye.
(ii) The multi-component lenses are used for both objective and the eyepiece 1
to improve image quality by minimising various optical aberrations in
lenses.
(iii) (a)The compound microscope is used to observe minute nearby objects 1
whereas the telescope is used to observe distant objects.
(b) In compound microscope the focal length of the objective is lesser 1
than that of the eyepiece whereas in telescope the focal length of the
objective is larger than that of the eyepiece.
OR
(iii) (a) The image formed by reflecting type telescope is brighter than that 1
formed by refracting telescope.
(b) The image formed by the reflecting type telescope is more magnified 1
than that formed by the refracting type telescope.

35(i) LEDs are made up of compound semiconductors and not by the 1

elemental conductor because the band gap in the elemental conductor has
a value that can detect the light of a wavelength which lies in the infrared
(IR) region.
(ii) 1.8 eV to 3 eV 1
(iii) LED is reversed biased that is why it is not glowing. 2
OR
V-I Characteristic curves of pn junction diode in forward biasing and 1+ 1
reverse biasing.