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Assignment 1 Basic Electronics

The document is an assignment for a basic electronics course that includes 10 questions about fundamental semiconductor and solid state physics concepts. It asks the student to explain how energy bands form in solids from atom energy levels, how semiconductor conductivity changes with temperature, define key terms like carrier concentration and mobility, calculate carrier densities and currents in semiconductor materials like silicon at different temperatures and doping levels, and determine built-in potentials for PN junctions.

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378 views

Assignment 1 Basic Electronics

The document is an assignment for a basic electronics course that includes 10 questions about fundamental semiconductor and solid state physics concepts. It asks the student to explain how energy bands form in solids from atom energy levels, how semiconductor conductivity changes with temperature, define key terms like carrier concentration and mobility, calculate carrier densities and currents in semiconductor materials like silicon at different temperatures and doping levels, and determine built-in potentials for PN junctions.

Uploaded by

Aayush
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Assignment # 1

EC-13101 (Basic Electronics)

1. Explain why the energy levels of an atom become energy bands in a solid?

2. Explain why semiconductor acts as an insulator at 0 K and why its conductivity increases with increasing
temperature?

3. (a) Define intrinsic concentration of holes.


(b) What is the relationship between this density and the intrinsic concentration for electrons?
(c) What do these equal at 0 K?

4. Define: (a) mobility (b) conductivity (c) donor impurity (d) acceptor impurity (e) volt equivalent of
temperature.

5. The density of electrons (number of electrons per unit volume), ni in silicon (Si) is given by –
ni  5.2 1015 T 3 2 exp   Eg 2kT  electrons cm3
Where k  1.38 1023 J K is the Boltzman constant. Determine the density of electrons in silicon at T=
300 K (room temperature) and T = 600 K.

6. A piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 10 16
atoms/cm3. Determine the electron and hole densities in this material at the room temperature. At what
doping level does the hole density drop by three orders of magnitude?

7. In an experiment, it is desired to obtain equal electron and hole drift currents. How should the carrier
densities be chosen?

8. A uniform piece of semiconductor 0.2 μm long sustains a voltage of 1 V. If the low-field mobility (μ0) is
equal to 1350 cm2/(V-s) and the saturation velocity of the carriers 107cm/s, determine the effective
mobility. Also, calculate the maximum allowable voltage such that the effective mobility is only 10%
lower than μ0.
9. A n-type piece of silicon with a length of 0.1 μm and a cross section area of 0.05 μm x 0.05 μm sustains a
voltage difference of 1 V.
(a) If the doping level is 1017cm-3, calculate the total current flowing through the device at T = 300 K.
(b) Repeat (a) for T = 400 K assuming for simplicity that mobility does not change with temperature.
(This is not a good assumption.)

10. A junction employs N D  5 1017 cm-3 and N A  41016 cm-3 .


(a) Determine the majority and minority carrier concentrations on both sides.
(b) Calculate the built-in potential at T = 250K, 300K, and 350K. Explain the trend.

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