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Assignment I

This document contains 14 questions related to semiconductor physics and devices: 1. Calculate intrinsic carrier concentrations in GaAs at 300K and 450K. 2. Determine intrinsic carrier concentrations in silicon at 300K with a given Fermi level position. 3. Given electron concentration in silicon, determine hole concentration and Fermi level position. 4. Calculate ratio of neutral to ionized donor densities in n-type silicon at 77K. 5. Calculate drift current density in a silicon sample with given doping and electric field. So in summary, this document presents calculation questions involving intrinsic carrier concentrations, Fermi level positions, and device parameters like carrier densities and currents in semiconductor materials like silicon

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47 views

Assignment I

This document contains 14 questions related to semiconductor physics and devices: 1. Calculate intrinsic carrier concentrations in GaAs at 300K and 450K. 2. Determine intrinsic carrier concentrations in silicon at 300K with a given Fermi level position. 3. Given electron concentration in silicon, determine hole concentration and Fermi level position. 4. Calculate ratio of neutral to ionized donor densities in n-type silicon at 77K. 5. Calculate drift current density in a silicon sample with given doping and electric field. So in summary, this document presents calculation questions involving intrinsic carrier concentrations, Fermi level positions, and device parameters like carrier densities and currents in semiconductor materials like silicon

Uploaded by

Anup
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Assignment-I

1.
Calculate the intrinsic carrier concentration of GaAs at T = 300 K and 450 K. Nc = 4.7 ×
1017 cm-3, Nv = 7.0 × 1018 cm-3 and Eg =1.42 eV.

2.
Determine the value of n0 and p0 for silicon at 300 K if the Fermi level is 0.22 eV above
the valence band energy. Nc = 2.8 × 1019 cm-3, Nv = 1.04 × 1019 cm-3 and Eg =1.12 eV.

3.
The electron concentration in silicon at T = 300 K is n0 = 5 × 104 cm-3. (a) Determine p0
and (b) Determine the position of Fermi level with respect to the intrinsic Fermi level.

4.
For an n-type silicon sample with 1016 cm-3 phosphorous donor impurities and a donor
level at ED= 0.045 eV, find the ratio of the neutral donor density to the ionized donor
density at 77 K where the Fermi level is 0.0459 below the bottom of the conduction band.

5.
Consider a sample of Si at 300 K doped at an impurity concentration of Nd = 1015 cm-3
and Na = 1014 cm-3. Calculate the drift current density if the applied electric field E = 35
V/cm. Assume μn = 1350 cm2/V-s and μp = 480 cm2/V-s. [Ans 6.80 A/cm2]

6.
An electron in a silicon device is injected in a region where the field is 500 kV/cm. The
length of this region is 1.0 m. Calculate the number of impact ionization events that
occur for the incident electron.

7.
From Shockley-Hall-Reed recombination theory, find out the life time for excess carriers
for an intrinsic semiconductor. [Ans. R = δn/ (τp0 + τn0)]

8.
Show that the diffusion length is an average distance the minority carriers diffuse before
recombination.

9.
A silicon diode is fabricated by starting with an n-type (Nd =1016 cm-3) substrate, into
which indium is diffused to form as a p-type region doped at 10 18 cm-3. Assuming that an
abrupt p+-n junction is formed by the diffusion process, i) calculate the Fermi level
positions in the p- and n-regions; ii) determine the contact potential in the diode; iii)
calculate the depletion widths on the p- and n-side.

10.
Consider a 20 μm diameter p-n diode fabricated in silicon. The donor density is 1016 cm-3
and the acceptor density is 1018 cm-3. Calculate the following in this diode at 300 K.
i) The depletion widths and electric field profile under reverse biases of 0, 2, 5,
and 10 V, and under a forward bias of 0.5 V.
ii) What are the charges in the depletion region for these biases?
11.
A silicon p+n diode has a doping of N a = 1019 cm-3, Nd = 1016 cm-3. Calculate the 300
K breakdown voltage of this diode using the critical field of 4×10 5 V/cm. If a diode with
the same ε/Nd value was to be made from diamond, calculate the breakdown voltage.
Diode with diamond critical field is 107 V/cm.

12.
Consider a long base p+n diode which is biased to carry a forward current of 1 mA. The
junction capacitance is 100 pF. If the minority carrier lifetime τp is 1 μs, what is the
admittance of the diode at 300 K for a 1 MHz signal?

13.
A metal-silicon Schottky barrier with a 100 μm diameter has 1/C2 vs V slope of -3×1024
F- 2 V-1. Calculate the doping density in the silicon.

14.
Consider a Schottky barrier formed on an InAlAs doped n-type at 10 16 cm-3. Calculate the
saturation current density if the Schottky barrier height is i) 0.7 V; ii) 0.6 V at 300 K.

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