Friction 1(4): 279–305 (2013)

DOI 10.1007/s40544-013-0026-y ISSN 2223-7690

REVIEW ARTICLE

Scratch formation and its mechanism in chemical mechanical

planarization (CMP)
Tae-Young KWON, Manivannan RAMACHANDRAN, Jin-Goo PARK*
Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea
Received: 14 June 2013 / Revised: 09 August 2013 / Accepted: 01 September 2013
© The author(s) 2013. This article is published with open access at Springerlink.com

Abstract: Chemical mechanical planarization (CMP) has become one of the most critical processes in
semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization
for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and
tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is
essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and
corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of
material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing
process conditions and consumables, scratch formation mechanism and the scratch inspection tools were
extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the
scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling
perspective were also discussed.

Keywords: Chemical mechanical planarization (CMP); defects, scratch; post-CMP cleaning; defect source

1 Introduction in poor step coverage and contact interruption. In

order to improve the planarity, various planarization
Recent advances in integrated circuit (IC) technology techniques were considered, such as thermal reflow
have led to a significant increase in the number of the of borophosphosilicate glass (BPSG), reactive ion-etch
active components with a significant decrease in feature back, spin etch planarization, spin on deposition (SOD)
dimensions. This has resulted in the development of and others [1]. However, these techniques are extremely
high performance IC chips. As the critical features of limited in achieving a global planarization suitable
semiconductor devices have decreased to nanoscale for submicron devices. On the other hand, chemical
dimensions and additional levels are implemented mechanical planarization (CMP) is a unique technique
leading to multilevel-interconnection, the required that can provide excellent local and global planarity
degree of planarization has become more challenging. for ultra large scale integrated (ULSI) applications.
Moreover, continuous improvement is required for Figure 1 shows the planarization length of various
smaller technology nodes. As the device feature size methods used for removing the excess material.
decreases, it becomes very challenging to achieve Initially, the CMP process was pioneered by IBM in
high resolution on a non-planarized surface using 1980s [3, 4]. The CMP process became prominent due to
lithography because of the depth of focus requirement advantages such as global planarization, fewer defects,
in optical systems. Rough and irregular surfaces induce better step coverage, suitable for various materials,
variation in the photo resist thickness, which results and simplicity [1, 5]. The advantages of CMP are
tabulated in Table 1. CMP has been developed for
dielectric planarization applications. CMP is also used
* Corresponding author: Jin-Goo PARK.
E-mail: [email protected] to remove bulk dielectric films on the surface to isolate
280 Friction 1(4): 279–305 (2013)

Fig. 1 Planarization lengths of various planarization methods [2].

Fig. 2 Schematic diagram and consumables of CMP process.
the active devices on silicon substrates and to remove
the bulk metal films from the wafer surface to form Silica and ceria are the most commonly used abrasives
metal interconnection plugs or lines in dielectric films particles. The abrasive particles used are in the
[2, 6]. Due to an increase in the number of transistors on nanometer range. The nature of the abrasive particles
IC chips of dynamic random access memory (DRAM) and their size distribution plays an important role
and logic devices, new interconnect materials are in material removal during the CMP process [9, 10].
essential to satisfy the higher performance requirements. Additives added to the slurry play different roles
CMP is a global planarization process in which the during oxide and metal CMP. In general, metal CMP
wafer surface is planarized using the synergistic effect slurry contains more chemical additives when com-
of chemical and mechanical actions. During the CMP pared to an oxide CMP slurry. A metal CMP slurry
process, the wafer surface moves across a polishing contains oxidizing agents, complexing agents, corrosion
pad under a down pressure in the presence of a slurry. inhibitors, dispersion agents, and pH adjustors. The
There are many consumables for the CMP process, such CMP slurry is delivered to the polishing pad using a
as the slurry, polishing pad, and diamond conditioners pump. A rotating polishing pad transports the slurry
[3, 5, 7, 8]. CMP involves a complex interaction between to the wafer surface [11]. Contact area is provided
the wafer surface and the consumables. Figure 2 shows between the abrasive-pad and the abrasive-wafer
a schematic diagram of the CMP process and highlights interfaces [12, 13]. The structure of the polishing pad
the consumables. The type of slurry to be used depends and its properties are important in determining the
on the material surface, which, in turn, is related to the removal rate and planarization efficiency [7]. The
chemical and mechanical properties of wafer material. polishing pad has numerous micro pores and grooves

Table 1 Advantages of the CMP process (Reproduced from Ref. [1], with permission from Elsevier).
Advantages Remarks
Planarization Achieves global planarization
Planarize different materials Wide range of wafer surfaces can be planarized
Planarize multimaterial surfaces Useful for planarizing multiple materials during the same polishing step
Reduces severe topography to allow fabrication with tighter design rules and additional
Reduce severe topography
interconnection levels
Provides an alternate means of patterning metal, eliminating the need to plasma etch,
Alternative method of metal patterning
difficult to etch metals and alloys
Improved metal step coverage Improves metal step coverage due to reduction in topography
Increased IC reliability Contributes to increasing IC reliability, speed, yield (lower defect density)
Reduced defects CMP is a subtractive process and can remove surface defects
No hazardous gases Does not use hazardous gas, which is common in dry etch process
Friction 1(4): 279–305 (2013) 281

for delivery of the slurry [14]. Hence, the mechanisms Removal rate has a non-zero intercept at both zero
for CMP are lubrication behavior and abrasion, such velocity and pressure and has a greater dependence on
as direct contact between the wafer and polishing the velocity compared to the pressure. Thus, Luo et al.
pad (two body abrasion) and contact between the [18] proposed a modified Preston equation as follows:
wafer, the pad, and the abrasive in the presence of a
MRR  K(P  P0 )(V  V0 ) or MRR
slurry film occurring in the asperity region (three body (2)
abrasion) [14]. The role of the diamond conditioner is  KPV  aP  bV  Rc
to excise the pad surface in order to maintain its
where, P0, V0, a, b, and Rc are constants. However,
roughness against the plastic deformation and to
Eq. (2) predicts that the removal rate increases with
prevent glazing due to the accumulation of polishing
the pressure even at zero velocity, which was not
residues in the pad pores [8, 15, 16]. This review article
consistent with their experimental data.
is divided into the following sections: Section 2,
The final, modified form of the equation, according
modeling of CMP; Section 3, scratch issues in CMP
to Luo et al. [18] is given as follows
process; Section 4, scratch inspection tools; Section 5,
scratch formation source; and Section 6, scratch MRR= (KP  B)V  Rc (3)
formation mechanism. This review focuses on the
where K, B, and Rc are constants and were obtained
latest developments and current status of research
by a least squares procedure. The Preston coefficient
on CMP scratches and possible solution to avoid the
and other constants can be obtained from experimental
scratches and outline the scopes for future research.
data.
Cook [19] developed a MRR model based on
2 Modeling of chemical mechanical Hertzian elastic penetration of a spherical particle
planarization with pressure in which the interaction between the
abrasive particle and wafer surface occurs. Also, Liu
The mechanism of CMP based on the mechanical et al. [20] proposed a model which is based on a
interactions between the wafer, pad, and abrasive statistical method and elastic theory to describe the
particle has been studied by several groups. The MRR mechanism of silicon wafer surface during
most fundamental and basic material removal model the CMP process. In this model, the parameters of
in CMP is the Preston model, which is applicable for removal rate are hardness of wafer film and pad, and
glass polishing [17]. This equation states that the Young’s modulus of abrasive and film material. The
material removal rate (MRR) is directly proportional advantage of Cook’s and Liu’s MRR model, based on
to the pressure and relative velocity as follows: Hertzian contact, is the importance given to the role
MRR  Kp  P  V (1) and interactions of the consumable.
Runnels [21] proposed a model by considering the
where MRR is the material removal rate in m/min, P slurry fluid film. The importance of wafer curvature,
is the down pressure in N/m2, V is the relative velocity slurry viscosity, and thickness of the fluid film was
between the pad and wafer in m/min and Kp is the described in the model. The stresses induced by the
Preston coefficient in m2/N. The Preston coefficient flowing slurry on feature surfaces were computed and
depends on various factors that can affect the removal used in erosion models that empirically incorporated
rate such as friction force, chemical reaction, heating the fracture mechanics and chemistry. Tseng and
and so on. This is an empirical equation for under- Wang [22] proposed a MRR model for the CMP
standing mechanical action during the CMP process, process through the combination of solid and fluid
which shows the linear dependency. mechanics. This model is given by MRR = MP 5/6V 1/2 ,
However, MRR is not zero for some materials, even where M is a constant associated with material pro-
when P and V are zero. Such behavior is most com- perties such as abrasive concentration and chemical
monly seen in metal CMP. Hence, a modified Preston’s processes during CMP. Also, this model was obtained
equation was proposed based on the Cu CMP [18]. using a non-linear relationship between the material
282 Friction 1(4): 279–305 (2013)

removal and relative velocity. This might be due to

the contribution of velocity to the slurry flow instead
of a sliding of abrasives. Zhang et al. [23] proposed an
equation MRR = K(PV)1/2 which included the effects
of polishing pressure and platen speed on particle
penetration depth in the CMP process. This equation
was derived based on the surface plastic deformation,
the pad-wafer partial contact, and particle adhesion
theory. Abrasive particle-surface interactions were
analyzed and material removal by adhesive and
abrasive removal mechanisms during CMP process
were extensively studied by Ahmadi and Xia [24].
The material removal rate was found to be related to
the distribution of pad asperities. A linear dependence
was obtained when the pad asperities have a random
distribution, while a sub linear dependence was
observed when the pad asperities have a wavy
distribution.
Fig. 3 Schematic diagram showing the polishing mechanism and
During the CMP process, the removal rate was
the criterion for material removal [27].
affected by the pad surface properties. For example,
MRR increases with the pad surface roughness [25]. particles are rolling against the wafer surface under a
Yu et al. [26] considered the effect of pad surface pressure lower than the threshold value, the removal
roughness and the interaction between the pad and rate will be negligible. The removal rate was found to
wafer with the contact area. Their results showed that be significant only if the abrasive particles held by the
the real pressure is induced by the contact area, and pad were sliding against the wafer surface. In other
moderately depends on the applied pressure. Also, the words, removal rate was found to be negligible, if the
ratio of real contact area was smaller than the nominal applied pressure is less than the minimum threshold
contact area and is proportional to the down pressure. pressure.
The physical CMP model, which includes the effects Luo and Dornfeld [28] investigated the abrasion
of polishing pad roughness and dynamic interaction mechanism in solid−solid contact mode of the CMP
between the pad and wafer, is based on the asperity process based on the assumptions of plastic contact
theory. Zhao and Shi [27] also proposed a model over wafer-abrasive and pad-abrasive interfaces.
based on wafer-asperity contact. The polishing pressure Figure 4 shows the two contact modes of the CMP
dependence of MRR for the CMP with a soft pad was process: the hydro-dynamical contact mode and the
found to be sub-linear. Also, abrasive particles can solid−solid contact mode. The Luo and Dornfeld model
demonstrate a threshold pressure during CMP pro- combined the process parameters including pressure
cesses, which might have played a critical role in MRR. and velocity in addition to other properties such as pad
Furthermore, the contact area between the asperity and wafer hardness, pad roughness, abrasive particle
and the wafer is given by A ∝ P2/3 based on Hertzian size, morphology and its distribution in the same
elastic contact theory. Finally, the modified MRR equation to predict the MRR. The material removal rate
equation is given as MRR = K(V)(P2/3 – Pth2/3) at P ≥ Pth, can be predicted by MRR = ρw NVolremoved + C0, where
and MRR = 0 at P < Pth, where Pth is the threshold ρw is the density of wafer material, N is the number
pressure, and K(V) is a function of relative velocity (V) of active abrasive particles, Volremoved is the volume of
and other CMP parameters. Figure 3 shows a schematic material removed by a single abrasive per unit time,
diagram showing the polishing mechanism and the and C0 is the material removal due to chemical etching.
criterion for material removal. When the abrasive Also, they suggest that two-body abrasion between
Friction 1(4): 279–305 (2013) 283

of surface being polished. This may be attributed to

the effects of various chemicals and abrasive particles
as well as the pressure exerted on the wafer surface
[7, 29]. Defects typically formed during the CMP
process include organic residues [29], water marks [30],
particle adherence and impingement [31], corrosion
pit, and scratches [30, 31]. However, the removal of
organic residues and water mark formation are trivial
in oxide CMP, but other types of defects, such as
scratch formation, are critical, as they affect the yield
and reliability of the devices [32]. Table 2 shows the
CMP process induced defects and their specific effects
on the replacement metal gate (RMG) process [33].
Scratches are one of the most commonly generated
defects during the CMP process. It was found that CMP
scratches could cause an initial failure as well as long
term reliability failure [34]. The failure mechanism in
the shallow trench isolation (STI), inter-level dielectric
Fig. 4 Two contact modes of CMP: (a) hydro-dynamical contact (ILD), and poly-Si CMP processes is very similar in
mode and (b) solid–solid contact mode [28].
nature. Scratches cannot be detected after CMP, but are
usually identified after etching using the HF solution
the wafer and an abrasive particle mainly affects the [33]. The periodic arc scars generated on brittle
material removal when compared to three body materials such as oxide, BPSG, and poly-Si are called
abrasion. chatter mark-type scratches [33, 35]. Figure 5 shows
some examples of chatter mark scratches after STI
CMP. Scratch shape is influenced by the mechanical
3 Scratch issues in CMP process
properties of the material. A wide variety of scratches
In the manufacturing of IC chips, the wafer is polished are formed on a metal surface like Cu, which is
several times using the CMP process. CMP has been shown in Fig. 6.
applied for polishing various types of surfaces, Surface defects by CMP have been continuously
including oxides, Cu, W and others [7]. However, reduced by the development of abrasive particles and
several defects induced by CMP depend on the type slurries, polishing pads, diamond conditioners and

Table 2 Potential causes of CMP defects and possible solutions [33].

Defect mode Potential causes Impact to device Potential solutions
· Slurry/pad residue · Shorting/opens · Cleaner tooling
Particles · Polish byproducts · Pattern distortion · Clean chemistries
· Pad conditioning
· Large/hard foreign particles
Macro scratches · Pattern removal over multiple die · Pad cleaning
on polish pad · Environment
· Slurry agglomeration · Slurry filters
Micro scratches · Shorting/opens
· Pad asperities · Pad/pad conditioning
Corrosion (metal · Slurry chemistry · Passivating films,
· Opens, Reliability
CMP) · Clean chemistry · Chemistry optimization
· Weak adhesion · Shorting/opens · Improve adhesion
Film delamination · CMP shear force · Device parametrics · Low pressure CMP
· Cleaner tooling
· Inadequate cleaning · Shorting/opens
Organic residue · Slurry optimization
· Residual slurry components · Disturbed patterning of next layer
· Clean chemistries
284 Friction 1(4): 279–305 (2013)

so on. However, as the scale of integration is reduced,

strict control of surface defects, such as scratches, is
required according to the International Technology
Roadmap for Semiconductors (ITRS) (Table 3) [36].

4 Scratch inspection tools

As the application of the CMP process increases,
various unpredicted defects occur. However, those
defects cannot be easily detected after CMP, and the
shape of such scratches depends on the source. Various
contaminated particles and defects on the wafers
were identified and characterized by means of optical
microscope, surface scanning inspection, scanning
electron microscopy (SEM), and atomic force micros-
copy [37, 38]. In particular, the inspection tools that
use the light scattering behavior have been used for
monitoring the scratches. Some instruments such as
Fig. 5 Chatter mark scratches observed in STI CMP [33]. confocal review stations (CRS) [39], advanced inspection
tools (ATI) [40], and optical surface analyzers (OSAs)
[41] are used in the industry. The optical inspection
system usually uses a bright and dark field system. In
the case of bright-field systems, both the scattered light
and reflected light are collected through the same
aperture to obtain an image. However, a dark field
system collects selectively the scattered light and not
the reflected light within the collection angle [42].

5 Scratch formation sources

5.1 High particle concentration and agglomerated

particles

Fig. 6 Various scratches formed in Cu CMP [33]. In the CMP process, several possible reasons for scratch
formation have been proposed in the literature [43−74]

Table 3 Critical scratch length and number on ITRS 2010 [36].

STI CMP technology requirements Scratches
Year of production DRAM 1/2 pitch (nm) Wafer diameter (mm) Critical scratch length, Critical scratch count,
(contacted) sc (nm) spw (wafer−1)
2012 36 300 17.9 40.1
2013 32 300 15.9 40.1
2014 28 450 15.9 150.5
2015 25 450 12.6 104.6
2016 22.6 450 11.3 104.6
2017 20.0 450 10.0 104.6
2018 17.9 450 8.9 104.6
Friction 1(4): 279–305 (2013) 285

and can be broadly classified into process conditions with a POU filter. Based on their results, the defects
(down pressure, velocity, etc.) based scratches and were remarkably reduced after installation of the POU
consumables (slurries include abrasive particles, pads, filter. Also, they showed that the slurry filter plays an
conditioners, etc) based scratches. CMP consumables important role in the determination of pad lifetime.
can cause surface scratches due to particle agglomera- The effect of a high spray bar (HSB) method, i.e.,
tion, release of diamonds from the conditioner, or pad de-ionized water (DIW) with high pressure during
debris. Several reports discussing the effects of these CMP was evaluated. High spray bar can prevent the
factors on scratch formation have been published accumulation of large particles on the pad. As a result,
[44−74]. Lin et al. [75] evaluated the number of scratches the defect density was significantly reduced when
formed during CMP on various film surfaces in the compared with an un-installed high spray method.
manufacturing of DRAM devices. The micro-scratch Figure 9 [43] shows the defect density trend obtained
number on the SiN cap layer was much lower, which with and without a high pressure DI water spray bar
might be due to the higher hardness. Also, they during CMP.
optimized the film thickness of filled oxide and SiN Teo et al. [44] characterized the scratches generated
cap layer to reduce micro-scratches, based on the during Cu CMP as a function of process pressure
difference in material hardness. and velocity with different abrasive particles. In their
Typically, a CMP process consists of chemical results, scratches generated on the Cu surface were
and mechanical interactions between the wafer and classified into two types, long scratches and triangular
polishing pad with a slurry. The mechanical action scratches. A likely cause for a long scratch is that
is attributed to the abrasive particle and polishing abrasive particles become embedded in the polishing
pad interactions. Hence, scratches resulting from pad during the polishing process. On the other hand,
mechanical polishing are inevitable. The abrasive a possible cause for triangle scratches could be due to
particle size distribution influences the number and freely suspended abrasive particles being driven onto
size of the active abrasives [76]. Seo and Kim focused the Cu surface. Also, it was found that deeper scratches
on micro-scratch generation caused by agglomerated were detected when larger and harder abrasive particles,
particles, which are solidified and attached in the like alumina particles, were used for Cu CMP.
pipeline of a slurry supply system [30, 40, 43]. They Also, it was noted that the occurrence of scratches
evaluated the effect of abrasive particle size distribu- can increase due to the agglomeration of the abrasive
tion and controlled the large particle concentration by particles. Flushing the stagnant slurry in the slurry pipe
installing a point of use (POU) slurry filter. Figure 7
line might remove the agglomerated abrasive particles.
shows a schematic diagram of the CMP tool with a
For example, the flushing procedure effectively reduced
POU filter. Figure 8 shows a comparison of defect
scratch generation (Fig. 10).
densities as a function of number of wafers polished
Ahn et al. [45] evaluated the surface roughness of Al
after CMP performed using the optimum conditions
of a silica based slurry and compared these with the
conventional alumina based slurry. The agglomeration
of particles induced by zeta-potential and oxide layer
thickness of Al, which are a function of pH, could
also affect the surface roughness. Also, the surface
roughness of Al increased with an increase in abrasive
concentration. The reason for this seems to be that
friction was more severe at high abrasive concentrations.
Kim et al. [46] focused on controlling the agglomeration
of ceria particles using the organic additives and pH
Fig. 7 Schematic diagram of the CMP tool with a POU filter adjusters to reduce micro-scratches. Remsen et al. [47]
and high pressure spray bar (HSB) of DI water [30].
used a dual-sensor single particle optical sensing (SPOS)
286 Friction 1(4): 279–305 (2013)

Fig. 8 Defect density as a function of polished wafer counts (a) without filter and (b) with 0.5 μm filter [30].

Fig. 9 Defect density trend (a) with pre-wet flow rate of 700 ml/min and without the high spray bar of DI water and (b) pre-wet flow
rate of 200 ml/min and high spray bar of DI water (Reproduced from Ref. [43], with permission from Elsevier).

CMP were established. Figure 11 shows the correlation,

which is linear when considering values of LPC over
0.469 μm. Also, an example of LPC levels of filtered
slurries (A, C, D, E, F, and G) with scratch count results
is shown in Fig. 12.
Several researchers used modified abrasive particles
to reduce the surface defects such as scratches [48−52].
Generally, a mixed abrasive slurry and various
dispersants were used for the development of fine
slurries [49, 50]. Coutinho et al. [48] synthesized
composite particles containing ceria nanoparticles
dispersed within cross-linked, polymeric microspheres
formed by copolymerization of N-isopropylacrylamide
Fig. 10 Effect of flushing slurry line [44]. (NIPAM) with 3-(trimethoxysilyl)propyl methacrylate
(MPS), which can used as novel abrasive particles for
analysis method to quantify the large particle con- CMP. As a result, surfaces polished using composite
centration (LPC). Also, the correlation between LPC particles showed lower topographical variations and
in fumed silica slurries and scratch formation during surface roughness than surfaces polished using ceria
Friction 1(4): 279–305 (2013) 287

Fig. 13 Surface roughness of the polished wafer (Reproduced

Fig. 11 Correlation between scratch counts and LPC determined from Ref. [48], with permission from Elsevier).
for particles with diameter ≥ 0.469 μm (Reprinted with permission
from Ref. [47]. Copyright 2006, The Electrochemical Society).
with a higher hardness generated more and deeper
scratches. The -alumina/silica core−shell particles were
prepared by mixing 0.2 mol/L Na2SiO3 and 1 wt%
H2SO4 solutions with an -alumina dispersion and
simultaneously stirring at the reaction temperature.
The pH of the mixture was maintained between 9
and 10. Synthesized alumina/silica core−shell abrasives
were characterized using Fourier transform infrared
(FTIR) spectrocopy, X-ray photoelectron spectroscopy
(XPS), secondary ion mass spectroscopy (SIMS), and
a zeta potential analyzer. Figure 15 shows the SEM
image of alumina particles before and after coating.
When a composite abrasive-based slurry was used
for the polishing, surface roughness was significantly
decreased; the optical microscope images of disk
substrate are shown in Fig. 16.
Fig. 12 Expansion of the low scratch count region of the
correlation between scratch counts and LPC determined for
On the other hand, novel polymer-core silica-shell
particles with diameter ≥ 0.68 μm (Reprinted with permission composites were proposed by Armini et al. [52, 53].
from Ref. [47]. Copyright 2006, The Electrochemical Society). Polymethyl methacrylate (PMMA)-based terpolymer
particles (diameter 350 nm) were coated with colloidal
nanoparticles (Fig. 13). Also, optical microscopy images silica particles. The coating was performed either
of post-CMP oxide surfaces are shown in Fig. 14. by creating chemical bonds using a silane coupling
Commercial ceria particles resulted in severe scratches agent (composite A) or by adjusting the pH to form
on the oxide surface when compared to the composite electrostatic attractive interactions between the core
ceria particles. and the shell (composite B). They focused on tuning
Furthermore, some researchers have proposed the mechanical properties of the polymer core by
surface modified abrasive particles for CMP slurry varying its synthesis parameters. The major advantage
formulations [51−54]. Lei and Zhang [51] used of the silica coating is that it can be easily modified in
alumina/silica core−shell abrasive particles to get a terms of its surface chemistry and morphology. Also,
uniform surface with fewer scratches. Alumina particles composite particles are aimed at improving the CMP
288 Friction 1(4): 279–305 (2013)

Fig. 14 Optical microscopy images of silicon dioxide films polished with slurry containing (a) 0.5 wt% composite particles, (b) 0.5 wt%
CeO2 nanoparticles, and (c) 0.25 wt% CeO2 nanoparticles (Reproduced from Ref. [48], with permission from Elsevier).

Fig. 15 SEM image of alumina particles (a) before and (b) after coating (Reproduced from Ref. [51], with permission from Elsevier).

Fig. 16 Optical microscope images of disk substrates polished in slurries containing different abrasives (a) before polishing (200×),
(b) polished using pure alumina slurry (200×) and (c) polished using composite abrasive (with 10 wt% coating) slurry (200×) (Reproduced
from Ref. [51], with permission from Elsevier).

process of soft materials due to the cushion-like effect oxide thickness loss after 1 min of CMP using different
arising from the elastic properties of the core, which abrasive particles. For the silica abrasive, thickness
allow the composites to easily adapt to the pad loss decreased with increasing particle size. In the case
asperities (Fig. 17). of two composite particles, total defect counts were
Oxide removal rate and scratch generation were different. Composite B particles are spherical in shape
evaluated using four types of abrasive particles (30 and are more similar to the colloidal silica particle.
and 90 nm colloidal silica particles, 350 nm polymer Also, the larger size of colloidal silica shows a higher
particles, composite A and B). Figure 18 shows the number of defects level than the smaller size of
Friction 1(4): 279–305 (2013) 289

colloidal silica. The interaction force and composite

particle morphology were also described in other works
[53, 54]. Based on the average pull-off force vs. pH
plot, qualitative agreement between the measured
adhesion forces and the material removal rate was
reached [53]. Furthermore, the depth of the scratch
increased with increasing abrasive size of fumed
silica abrasive. Overall, fewer and shallower scratches
were detected for composite B particle with a colloidal
silica shell compared with only colloidal silica due to
the effect of the elasticity of the polymer core [54].
As mentioned earlier, slurry is one of the major
consumables for the CMP process. Slurry consists of
Fig. 17 Schematic diagram depicting μ-scale phenomena occurring fine abrasives which act as a source for scratch
during CMP. SEM images of (a) composite A and (b) composite generation. A typical CMP slurry consists of abrasives,
B abrasives (Reprinted with permission from Ref. [52]. Copyright
additives, and a pH buffing agent. The slurry distri-
2007, The Electrochemical Society).
bution system consists of a slurry tank, distribution
pumps, a pressure gauge, a flow meter, and a
pressurized air supply outlet/inlet [55]. A schematic
representation of the slurry distribution system is
shown in Fig. 19. Stability of the slurry is critical in
the CMP process. During pumping and mixing of the
slurry, particles tend to agglomerate due to the pH
shock, the dilution effect or the temperature change.
pH shock may be due to the dilution effect or mixing
effect caused by the additives (as in the case of a
two component slurry) [56]. Stress-induced particle
agglomeration has already been extensively studied
[55, 57, 58].
Stress-induced particle agglomeration can be
explained by the Smoluchowski theory based model,

Fig. 18 (a) Thickness loss vs. abrasive type and (b) total defect Fig. 19 Schematic illustration of the slurry distribution system
count vs. abrasive type after oxide CMP at pH 10 [52]. [55].
290 Friction 1(4): 279–305 (2013)

which considered the shear flow and the electrostatic are greater than the repulsive inter-particle force,
interaction between particles. It was assumed that particle agglomeration occurs. The degree of particle
particle collisions were binary and proportional to the agglomeration is influenced by the slurry properties
particle concentration. Chang et al. [55] simulated the (e.g., interparticle forces), external shear stress (i.e.,
aggregation rate of k-fold aggregates, dNk/dt, which type of pump), and the number of turnovers of the
is given by the time evolution of the cluster size slurry. They found that a magnetically levitated
aggregates, i and j-fold. centrifugal pump resulted in lower stress effects on
particle agglomeration and did not increase the
l  k -1 
dN k 1
dt

2
 (k
i jk
ij /Wi j )N i N j  N k  (kki /Wki )N i
k 1
(4) concentration of oversized particles, as shown in
Fig. 20 [55]. Also, the defectivity was evaluated using
the low-k dielectric CMP. Optical microscopy images
4 of the low-k dielectric film are shown in Fig. 21.
kij  G( ai  a j ) (5)
3
5.2 Pad surface properties and pad debris
where the aggregation constant, kij, is a function of
the shear rate (G) and particle size (a). The stability CMP is a complex interaction process between the
ratio (W) is the ratio of the rapid aggregation rate wafer surface and the consumables. The CMP polishing
without electrostatic interaction to the slow aggregation pad is an important consumable among all other
rate in the presence of electrostatic interactions consumables, and has a dominating effect on the
between particles. According to this model, the material removal rate [59]. The structure and material
shear flow causes particles to approach each other properties determine the material removal rate and
during slurry delivery. When van der Waals forces planarization ability [1, 60]. Usually, the polishing

Fig. 20 Cumulative concentration vs. particle size at 0, 250, and 500 turnovers for (a) bellows, (b) diaphragm, and (c) magnetically
levitated centrifugal pump system (Reprinted with permission from Ref. [55]. Copyright 2009, The Electrochemical Society).

Fig. 21 Optical microscopy images of BD1 wafers polished by circulated slurries using (a) bellows, (b) diaphragm and (c) magnetically
levitated centrifugal pump system (Reprinted with permission from Ref. [55]. Copyright 2009, The Electrochemical Society).
Friction 1(4): 279–305 (2013) 291

pad contains both pores and grooves, which help for ratio (percentage of scratches/defective die, i.e., the
better planarization [61, 62]. The pores of a pad act number of scratches formed on 100 defective dies) and
as a lake, store the slurry particles, and enhance the removal rate during the STI CMP process. Scratch
contact time between slurry particles and the wafer. formation was found to be higher in the contact regime
Grooves provide a channel for efficient and uniform and lower in the lubricating regime. The contact regime
slurry distribution across the pad surface to the wafer exists when the pad contains only grooves [63], and
surface. These parameters determine the slurry tran- the lubricating regime exists when the pad contains
sportation and contact area at the pad/wafer interface pores [64]. Optimum conditions were obtained in the
[1, 5, 7, 59, 62]. Choi et al. [62] studied the synergistic presence of a lubricating regime with fewer scratch
role of pores and grooves of a pad in forming the sources present on the pad [62]. Also, the presence of
scratches (especially chatter mark scratches) using grooves helps to discharge most of the scratch sources
three types of pads. Pad with only pores, only grooves, generated during the process away from the wafer–
and both pores and grooves were investigated to pad contact [65].
understand its effect on scratch formation. Figure 22 Both the structure of polishing pads, such as pores
shows the SEM images of scratch shapes formed on and grooves, and the hardness of the pad affect the
the STI patterned wafers polished using three types MRR and generate the scratches. Hsien et al. [66]
of pads. Different types of pads generated different reported scratch generation by comparing the hard
types of scratches. Pad-3 (containing both pores and and soft pads. It was reported that the soft pad with
grooves) generated short chatter mark-shaped scratches lower pressure generated fewer scratches [66, 67].
compared with the other types of pads. Furthermore, Eusner et al. [68] quantitatively analyzed
Figure 23 shows the effect of pad type on scratch the topography and material properties of fresh and

Fig. 22 SEM images of scratches formed on STI-patterned wafers after CMP using pads with (a) only grooves (pad-1), (b) only pores (pad-2),
and (c) pores and grooves (pad-3) [62].

Fig. 23 (a) Scratch ratio on the STI-patterned wafer, and (b) MRR of blanket oxide wafer with ceria slurry as a function of pad type [63].
292 Friction 1(4): 279–305 (2013)

broken-in pads to correlate with scratch generation on

Cu CMP. The hardness and modulus of the pad were
measured, and the change in pad asperity radius of
curvature was measured during pad break-in with a
blanket Cu wafer in the slurry. It was found that the
average pad modulus decreased from 0.66 to 0.34 GPa
and the average pad hardness decreased from 0.05
to 0.03 GPa through pad break-in. In contrast, the
average pad asperity radius of curvature increased
from 16 to 93 μm as a result of pad break-in, which
induced a reduction in severe scratch formation.
Scratches were detected using an optical scanning Fig. 24 SEM micrographs (top) and schematics (bottom) of (a)
porous pads and (b) solid pads (Reproduced from Ref. [70], with
method after polishing using the fresh and broken-in
permission from Elsevier).
pad with only water. The reason for using water was
to isolate the scratches generated by the pad from the
slurry particles. Also, the critical pad asperity radius
of curvature was based on asperity deformation (i.e.,
elastic or plastic).
During the CMP process, the pad surface can
undergo plastic deformation and the surface becomes
smoother as the pores are filled with the pad materials
[15]. Using a glazed pad causes the removal rate to
drop significantly [69]. Polishing pads were conditioned
with a diamond conditioner to provide consistent
performance and to prevent the glazing effect. Usually,
diamond grits used for pad conditioning are attached
to an alloy substrate using electrochemical deposition
methods [8]. Yang et al. [70, 71] investigated the CMP Fig. 25 Scratch level on STI patterned wafers generated by porous
process based on material removal rate and scratch and solid pads with 180 μm diamond conditioner (Reproduced from
Ref. [70], with permission from Elsevier).
defects by studying the pad interaction and conditioner
effect using two types of polishing pads: a porous
diamond size of conditioner on the removal rate and
pad and a solid pad with micro holes (Fig. 24). When
scratch generation. It was found that the micro holes
a solid pad with micro holes was used with a fumed in the pad acted as a defect source or coarse particle
silica slurry and a 180 μm diamond grit conditioner, reservoir to prevent micro scratching during the
the material removal rate decreased by approximately process [71]. They reported optimized results of solid
10% compared with the porous pad. However, the pads with micro holes using the hole depth control
scratch defects were reduced when compared with procedure to reduce the defects.
the porous pad which is shown in Fig. 25. In order to As mentioned earlier, pad debris can be generated
increase the removal rate obtained using a solid pad due to tearing of the pad by the conditioner. Prasad
with micro holes to a level comparable to a regular et al. [72] studied the generation of pad debris and its
porous pad, various diamond conditioners with characterization. They reported that pad debris could
diamond size ranging from 70 to 130 μm were adopted. act as a main scratch source, resulting in scratches with
Also, pad surface roughness and contact area were several size ranges with irregular shapes, mostly in
analyzed to understand the removal rate and the agglomerated form. It was also proposed that the
scratch generation. Figure 26 shows the effect of surface properties were changed by their adsorption
Friction 1(4): 279–305 (2013) 293

Fig. 27 SEM image and EDX analysis of (a) fresh pad, (b) pad
debris with only DI water, and (c) pad debris with silica slurry [72].

Fig. 26 The effect of diamond size on (a) removal rate and (b)
scratch generation (Reproduced from Ref. [70], with permission
from Elsevier).

with abrasive particles. Figure 27 shows FESEM images

of fresh pad particles and pad debris generated using
DI water and silica abrasive particles. Park’s group
[73] also investigated the scratch number using the
three different scratch source (vis., pad debris, dried
particles, and diamond particles) on scratch formation
comprehensively with their classification. Figure 28
shows the material removal rate and generated scratch
number as a function of scratch source. A small
amount of impurity in slurry did not affect the MRR.
However, scratch number was affected by the kind of
scratch sources. Figure 29 shows the distribution of
scratchess formed by adding different scratch sources
during polishing. Borken chatter type of scratches
was easily formed when dry slurry paritcles were Fig. 28 (a) Material removal rate, non-uniformity and (b) the
added but group chatter when pad debris were added. variation of number of scratches formed with addition of different
Yang et al. [74] measured the pad surface hardening scratch sources [73].
294 Friction 1(4): 279–305 (2013)

Fig. 30 A plot of the dependence of light-point defect counts,

measured with a Tencor 6220 on oxide wafers, as a function of
PSM vacuum level. A reduction of nearly 50% was observed as a
PSM vacuum [77].

6 Scratch formation mechanism

Brittle fracture can occur by three basic types of static
indentations: Hertzian cracks, radial cracks, and lateral
cracks (Fig. 31) [78−80]. Hertzian cracks are cone cracks
that are created from a spherical indenter. Radial
cracks are semi-circular cracks perpendicular to the
glass surface from a sharp indenter, and lateral cracks
Fig. 29 (a) Effect of addition of pad debris, dried slurry particle are cracks that run generally parallel to the glass
and (b) diamond particles on distribution of scratch shapes formed surface, which are also typically created by a sharp
on oxide surface after CMP process with silica slurry [73]. indenter. Suratwala et al. [78, 79] measured the
distribution and characteristics of surface crack (sub-
phenomenon based on force–distance (F–D) curves. surface damage) formation during grinding on fused
It was found that the interaction between abrasive silica glass using a surface taper polishing technique.
particle and polyurethane pad under tribo-mechanical The observed surface cracks were characterized as
action could change the pad surface hardness. Benner near-surface lateral- and deeper trailing indent-type
et al. [77] used a vacuum cleaner to remove the pad fractures. They showed that only a small fraction of
debris and agglomerated large particles from the pad; the abrasive particles are being mechanically loaded
they dubbed this process the pad surface manager and causing fracture, and most likely it is the larger
(PSM). Figure 30 contains a plot of light-point defects particles in the abrasive particle size distribution that
measured using a Tencor 6220 on polished oxide bear the higher loads. Surface damage depth increased
wafers using different levels of PSM vacuum. The data with load and with a small amount of larger con-
were normalized to that observed without vacuum. taminant particles, which is based on the brittle facture
As the PSM vacuum level was increased, CMP models (Fig. 32) [78]. Also, the surface damage depth
induced wafer defects decreased. Approximately a distribution has been related to the length distribution
50% reduction in light-point defects was observed to gain insight in effective size distribution of particles
using the PSM technique. participating in the fracture. Figure 33 shows the
various types of scratches that were observed as a result
Friction 1(4): 279–305 (2013) 295

Fig. 32 (a) Lateral crack depth as a function of load1/2 and (b)

Hertzian cone depth and radial crack depth as a function of
load2/3 [78].

Fig. 31 Schematic illustrations of the fracture geometry of the

idealized fractures created by static indentation: (a) Hertzian cone
crack from a blunt indenter, (b) radial or median cracks from a
sharp indenter, and (c) lateral crack from a sharp indenter [78].

of addition of rogue particles [81]. These scratches

Fig. 33 Categories of different types of scratches observed in
were classified into three basic categories: (1) plastic fused silica sample (Reproduced from Ref. [29], with permission
scratches that show no brittle fracture, (2) brittle from Elsevier).
scratches, which only have cracks (trailing indent or
lateral) and (3) mixed scratches that contain both Furthermore, Ring et al. [29] reviewed the mechanical
plastic modification and cracks. properties and fracture mechanics of materials in order
296 Friction 1(4): 279–305 (2013)

to understand the surface damage caused during and particles impurities, which were not spherical
CMP. The resulting failure was predicted by various but angular in shape. Also, the distribution of radii of
mechanical wear (or scratching) equations depending curvature for the point of the impurity particle in
upon the assumption of plastic deformation or brittle contact with the wafer surface was considered. Hence,
fracture (Fig. 34). The wear rate goes from reasonably the plastic deformation scratch depth is given by
low rates for plastic wear to rates with higher orders of
 L E 
12

b   N 2   cot  
13
magnitude for brittle fracture. The wear rate transition (9)
occurs at a threshold normal load, i.e.,  H 
Here, E’ is the relative modulus of elasticity and φ is
LNc ~ 2  10 5 KIc4 H 3 (6)
the angle between opposite edges of the indenter. The
where H is the hardness of the surface being damaged depth of the radial cracks, gives the scratch depth for
and KIc is its fracture toughness. In the case of plastic brittle fracture as follows:
deformation, the differential volume, dV, of material 23
  E  1 2  L  23
removed per unit length, dx, of the scratch depends c  CR   r    N  cot    (10)
upon the load of the abrasive point normal to the   H   KIc  
surface, LN, and the mechanical properties of the where r is a dimensionless constant. There is a transi-
materials comprising the surface as follows: tion between plastic and brittle fracture scratching
dV dx ~(LN H ) (7) that takes place as the load is increased. Therefore,
when the load on an impurity is less than LNc, plastic
This equation assumes that the abrasive point is harder deformation will take place; when the load on an
than the material comprising the surface. In the case impurity particle is greater than LNc, brittle fracture
of brittle fracture, the fracture wear rate could be will take place.
represented as follows: Particle impurities are forced by pad asperities to
be in contact with the wafer surface. The asperities
dV dx ~(E H )4 5 KIc-1 2 H -5 8 L9N8 (8)
press the impurity particles into the wafer surface,
where E is Young’s modulus. Ring et al. considered creating a normal load that allows the depth of the
each of these scratching particles to be attached to the surface damage to be predicted using Greenwood and
tip of an asperity or, if larger than an asperity, to be Williamson’s [82, 83] and Yu’s theories [26]. Figure 35
pressed into the pad to determine the depth distri- shows the size distribution of scratches produced
bution of the scratches due to both abrasive particles by the impurity particles. The deepest scratches were
formed by the large impurity particles and the po-
pulation of scratches decreased as the scratch depth
increases for a given size of particle impurities.
Saka et al. [84] estimated the scratch formation at
lower and upper-bound loads based on contact
mechanics models. Additionally, the width and depth
of scratches are dependent on process parameters
such as particle size, abrasive volume fraction, and
mechanical and geometric properties of the pad and
surface coatings. In their study, interactions between
the Al2O3 abrasive particles and the Cu/low-k surface
were described. They assumed that the Young’s
modulus and hardness of abrasive particles are greater
Fig. 34 Schematic of (a) plastic deformation and (b) brittle than the coated films. Particles were assumed to be
fracture (Reprinted with permission from Ref. [29]. Copyright spherical and rigid with smooth and sufficiently thick.
2007, The Electrochemical Society). The radius of the contact on the coated film at yield
Friction 1(4): 279–305 (2013) 297

Fig. 36 Schematic of a hard particle indenting a soft coating at

the onset of yielding [84].

During polishing under full-contact mode, abrasive

particles sticking to the wafer were pressed, which
is shown in Fig. 37. The hardness of coated film (Hc)
[84, 87], is given by

RUB RUB
Hc   (14)
A π 2
ac
2
where PUB is the applied load, A is the projected con-
tact area, and ac is the semi-width of a scratch. Based on
the geometry of the scratch, the relation between the
depth of the scratch (δc) and the semi-width is given by
Fig. 35 Size distribution of scratches produced in (a) ILD and
(b) copper by particle impurities (Reprinted with permission from
c
2
1  ac 
Ref. [29]. Copyright 2007, The Electrochemical Society).     c  ac  (15)
R 2 R 
(aY,c), the depth of the indentation in the film at yield
load (δY,c), the yield load (PY,c) as a function of the
particle radius (R) and the mechanical properties of the
coating were represented based on Hertzian analysis
and the Tresca criterion for yielding as follows [84−86]:

π Hc
aY,c  R (11)
4 Ec

π 2 H c2
 Y,c  R (12)
16 Ec2

π 3 H c3 2
PY,c  R (13)
48 Ec2

where Ec and Hc are the Young’s modulus and hardness

of the coated film, respectively. Figure 36 shows the
geometry of the contact. Fig. 37 A hard particle scratching a soft coating [84].
298 Friction 1(4): 279–305 (2013)

For a fully plastic contact, the semi-width and Chandra et al. [89] proposed a multi-scale model
the depth of a scratch, and the upper-bound load, encompassing the pad response and slurry behavior
respectively, are to predict the scratch propensity in CMP. The pad
response delineates the interplay between the local
12
 2P  particle-level deformation and the cell-level bending
ac   UB  (16)
 πH c  of the pad. Although the agglomeration process is
traditionally classified into two separate regimes,
PUB diffusion-limited agglomeration (DLA) and reaction-
c  (17)
πRH c limited agglomeration (RLA), DLA occurs near the
iso-electric point of the slurry particles, while RLA
PUB  π c RH c  c  ac ≪ R  (18) occurs when the pH of the slurry is away from the
iso-electric point [89]. For the general case, the
Figure 38 shows the normalized experimental load agglomeration process can be modeled using the
versus the normalized scratch depth. The solid line Smoluchowski rate equation [89, 90], which gives the
represents the normalized upper-bound load. Therefore, time rate of change of the number of particle clusters
all the points on the graph should be below the line of with volume M, N(M), as follows:
the upper bound load according to Eq. (18). In Fig. 38,
d 1 M -1
all the points were below the solid line; therefore, the N ( M )   a (M , K )N (M -K )N (K )
load per particle can be related to the scratch width dt 2 K 1

(19)
and depth, according to Eq. (18). Based on the above   a (M ,K )N (M )N (K )
modeling and experimental results, multi-particle K 1

contact behavior and the effect of pad asperity geometry The agglomeration kernel, a(M,K), is the rate at which
for the initiation of scratches were analyzed [84, 88]. clusters of volume M agglomerate with particles of
The various regimes of scratching by polishing pads volume K. It has been shown that most agglomeration
in CMP have been delineated by contact mechanics results from smaller particles sticking themselves onto
based theoretical. a larger cluster [91]. The spatial distribution of the
MRR is also affected by pad wear, which takes place
mainly at the asperity level. The probability density
function of the asperity height z at any time t is given
as follows:

4C E*  s 
d
dt
 (z ,t )  a
3π z
 
z-d(t ) (z ,t ) (20)

where Ca is the pad wear rate coefficient, E* is the

effective modulus of the pad and  s is pad asperity
tip curvature. Also, the calculation of scratch depth
involves two random variables, pad asperity height (z)
and effective particle cluster radius (X). The two
variables are independent and the scratch depth W(i,j)
due to the jth particle under the ith asperity is given by
[89, 91]

E*  s
W (i , j)  z-d(t )X(i , j ) (21)
Hπ
Fig. 38 Normalized experimental load versus the normalized
scratch depth (Reproduced from Ref. [84], with permission from Using the above equations, the cumulative density
Elsevier). function of the scratch depth can be calculated. The
Friction 1(4): 279–305 (2013) 299

probability per active particle, P(W  ω), a scratch of the probability density of scratch depth, which was
depth W, which is less than a prescribed threshold ω, simulated from the proposed equations. It was
will be created and is given by observed that the scratch depth increased while scratch
frequency decreased for harder pads as well as for
Xmax w2 H 2
P(W ≤ w)    f z (z)f x (x)dzdx (22) softer wafer surfaces.
0 0
Typically, chatter mark-type scratches, which have
The model predictions were compared with the a repetitive C-shaped crack, were generated in inter-
experimental results in Fig. 39. The maximum scratch level dielectric (ILD) materials (Fig. 40). In this image,
depth predicted by the model was much lower. This the cracks are larger at one end and smaller at the other
discrepancy was thought to be caused by inaccuracies end of the repetitive line. Furthermore, the repetitive
in the assumed initial particle distribution in the slurry. C-shaped surface showed damage that is tens of nm
This might be due to the contamination of the slurry deep with some individual cracks that were deeper
with a very low percentage of relatively large particles. than others, in atomic force microscope (AFM) images.
Additionally, the model was adopted as a function Ring et al. [29] explained this phenomenon based on
of pad modulus and wafer surface hardness. The bouncing particle model. The springiness of the pad
scratch depth was affected by pad modulus, and hence causes the particle to bounce against the wafer surface.
Bouncing may be initiated by a particle impurity that
is sliding across the surface of the wafer. After the first
bounce, the particles have sufficient force to indent
the surface of the wafer. This force is supplied by
the elastic properties of the pad when the particle is
pushed into it and then rebounds. The frequency of
bounces can be determined by the simple physics of a
mass (the particle) on a spring (the pad). The governing
equation is given by

d2 x
F  k1 x  m (23)
dt 2

where F is the force supplied by elastic property of

Fig. 39 Normalized experimental load versus the normalized the pad, k1 is the spring constant of the pad, m is the
scratch depth (Reproduced from Ref. [89], with permission from mass of the particle and x is the vertical distance that
Elsevier). the particle moves into the pad during rebound. The

Fig. 40 Chatter surface damage showing repetitive, 40-nm-deep indentations in the wafer surface (Reprinted with permission from
Ref. [29]. Copyright 2007, The Electrochemical Society).
300 Friction 1(4): 279–305 (2013)

solution to the above equation is given by spring constant k of the model connecting the step
motor (moving at a constant speed V0) to the slider
x  Asin( t   0 ) (24) can be obtained from the slope of the horizontal force
versus time curve (Fig. 42) during the sticking stage.
where A is the amplitude, which is given by
The total mass of the slider and sample is m. L is the
normal load applied to the specimen and x is the real
 
2

A  x02   0  (25) scratch distance moved by the indenter. The force

 
balance in the sliding direction is given by
where x0 is the initial displacement of the particle in
k(V0 t  x)  f  mx
 (27)
the pad and v0 is the initial vertical velocity of the
particle. The angular frequency, ω (and frequency, f)
During scratching, the horizontal force is measured
for a mass on a spring are given by
by k(V0t− x), where k(V0t − x) is the real extension of
the spring being stretched, f is the force needed to
2π k1
  2πf  (26) plastically deform the material in front of the indenter.
T m
A saw-tooth wave form characteristic of stick-slip
where T is the period of oscillation. behavior is shown in Fig. 42. It was observed that the
During the oxide CMP, even more chatter mark- scratching motion was preceded by jerks instead of
type scratches are formed on the wafer surface [90]. a smooth path. In their result, it was reported that,
However, the explanation of chatter mark scratch during slip, the indenter velocity started from zero,
generation using only basic contact theory is not easy. increased to a maximum and then decreased to zero
Stick-slip phenomena between two sliding surfaces again. The scratch groove made during slip showed a
are commonly observed in a wide range of length non-uniform depth, which increased with decreasing
scales from atomic to macroscopic [73, 91, 92]. Gao et of scratch velocity. Although the scratch velocity and
al. [92, 93] developed an empirical equation describing groove depth changed markedly during slip stage,
the stick-slip friction as a function of humidity, speed, the scratch force remained almost constant for most
and applied load. Zhang and Li [94] proposed that of the scratch distance.
the normal load is the main contributing factor in the Kim et al. [95] also studied the generation of chatter
scratch force, rather than the driving speed during mark scratches and proposed the controlling parameters
stick-slip, and proposed a micromechanical model for chatter mark scratching. Based on the force balance
to describe the slip process. Figure 41 shows a simple in the sliding direction, stick-slip friction was used
model of that proposed scratch system. The effective in the model. The distance between chatter marks

Fig. 41 A simple model of the scratch system (Reproduced from Fig. 42 The horizontal force measured by the load cell, k(V0t–x)
Ref. [94], with permission from Elsevier). (Reproduced from Ref. [94], with permission from Elsevier).
Friction 1(4): 279–305 (2013) 301

was predicted by controlling the applied velocity to permits any use, distribution, and reproduction in any
characterize the chatter scratch formation. Thus, the medium, provided the original author(s) and source
particle position from the starting point increased are credited.
with increased oscillatory motion and sliding time
(or distance).
References
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Jin-Goo PARK. He received PhD directors of Micro Biochip Center and Nano-bio
degree in materials science and Electronic Materials and Processing Lab. (NEMPL,
engineering from University of www.nempl.net). His research interests include
Arizona in 1993. From 1992 to 1994, wafer cleanings and chemical mechanical polishing
he was with Texas Instruments, as well as nano-bio MEMS. He is now president of
Dallas, TX, where he was Korea CMPUGM (www.cmpugm.com) and a
responsible for microcontamination founder and president of International Conference on
control in semiconductor wet processing and DMD Planarization/CMP Technology (ICPT) which is the
development. In 1994, he joined Hanyang University largest CMP conference in the world. He is also a
at Ansan, where he is now a professor in the founder of Korea Surface Cleaning Users Group
Department of Materials Engineering as well as Meeting (www.scugm.com).

Tae-Young KWON. He received and Ph.D. student at the same university. He has
his Bachelor degree in Department recently obtained his Ph.D. degree in Department of
of Materials Engineering in 2006 Materials Engineering at Hanyang University. His
from Hanyang University, Ansan, research interests include Chemical Mechanical
Korea. After then, he was a M.S. Planarization process and its tribology.