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2M-BIT (256K X 8/128K X 16) CMOS MASK ROM: Features

The MX23C2100 is a 2M-bit CMOS mask ROM that can be configured as either 256Kx8 bytes or 128Kx16 words. It has a fast access time of 150/200ns, operates from a single 5V supply, and has low standby and operating currents. The device has a 40-pin DIP package and static operation.

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61 views7 pages

2M-BIT (256K X 8/128K X 16) CMOS MASK ROM: Features

The MX23C2100 is a 2M-bit CMOS mask ROM that can be configured as either 256Kx8 bytes or 128Kx16 words. It has a fast access time of 150/200ns, operates from a single 5V supply, and has low standby and operating currents. The device has a 40-pin DIP package and static operation.

Uploaded by

Duy Dai Ca
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INDEX

MX23C2100
2M-BIT [256K x 8/128K x 16] CMOS MASK ROM
FEATURES
Switchable organization - 256K x 8 (byte mode) - 128K x 16 (word mode) Single +5V power supply Fast access time:150/200ns Totally static operation Completely TTL compatible Operating current: 60mA Standby current: 100uA Package type: - 40 pin DIP (600 mil)

GENERAL DESCRIPTION
The MX23C2100 is a 5V only, 2M-bit, Read Only Memory. It is organized as 256K x 8 bits (byte mode) or as 128K x 16 bit (word mode) depending on BYTE (pin 31) voltage level. MX23C2100 has a static standby mode, and has an access time of 150/200ns. It is designed to be compatible with all microprocessors and similar applications in which high performance, large bit storage and simple interfacing are important design considerations. MX23C2100 offers automatic power-down, with powerdown controlled by the chip enable (CE/CE) input. When CE/CE is not selected, the device automatically powers down and remains in a low-power standby mode as long as CE/CE stays in the unselected mode. The OE/OE inputs as well as CE/CE input may be programmed either active High or Low.

PIN CONFIGURATION
40 PDIP
NC A7 A6 A5 A4 A3 A2 A1 A0 CE/CE VSS OE/OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC

BLOCK DIAGRAM
CE/CE OE/OE BYTE Q15/A-1 CONTROL LOGIC OUTPUT BUFFERS

Q0~Q14

MX23C2100

A0~A16 ADDRESS INPUTS

. . . . . . . .

Y-DECODER

X-DECODER

. . . . . . . .

Y-DECODER

2M BIT ROM ARRAY

VCC VSS

PIN DESCRIPTION
Symbol A0~A16 Q0~Q14 CE/CE OE/OE BYTE Q15/A-1 VCC VSS Pin Function Address Input Data Output Chip Enable Input Output Enable Input Word/Byte Selection Q15 (Word mode)/LSB addr. (Byte mode) Power Supply Pin (+5V) Ground Pin
REV. 2.2, JAN. 28, 1999

P/N:PM0134

INDEX

MX23C2100
TRUTH TABLE OF BYTE FUNCTION
BYTE MODE (BYTE=VSS) CE OE/OE D15/A-1 H X X L L/H X L H/L A-1 input WORD MODE (BYTE=VSS) CE OE/OE D15/A-1 H X High Z L L/H High Z L H/L DOUT NOTE1:X=H or L

MODE Non selected Non selected Selected

D0-D7 High Z High Z DOUT

SUPPLY CURRENT Standby (ICC2) Operating (ICC1) Operating (ICC1)

NOTE 1 1 1

MODE Non selected Non selected Selected

D0-D14 High Z High Z DOUT

SUPPLY CURRENT Standby (ICC2) Operating (ICC1) Operating (ICC1)

NOTE 1 1 1

ABSOLUTE MAXIMUM RATINGS*


RATING Ambient Operating Temperature Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential Power Dissipation VALUE 0 to 70 C C -65 to 125 C C -0.5V to 7.0V -0.5V to 7.0V -0.5V to 7.0V 1.0W *Notice: Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.

DC CHARACTERISTICS (Ta = 0C ~ 70C, VCC = 5V10%)


Item Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Power-Down Supply Current Standby Supply Current Operating Supply Current Symbol VOH VOL VIH VIL ILI ILO ICC3 ICC2 ICC1 MIN. 2.4 2.2V -0.3V MAX. 0.4V VCC+0.3V 0.8V 10uA 10uA 100uA 1.0mA 60mA Conditions IOH = -1.0mA IOL = 2.1mA

VIN=0 to 5.5V VOUT=0 to 5.5V CE>VCC-0.2V CE = VIH Note 1

P/N:PM0134

REV. 2.2, JAN. 29, 1999

INDEX

MX23C2100
CAPACITANCE (Ta = 25C, f=1.0MHz (Note 2))
Item Input Capacitance Output Capacitance Symbol CIN COUT TYP. MAX. 10 10 UNIT pF pF Conditions VIN=0V VOUT=0V

AC CHARACTERISTICS (Ta = 0C ~ 70C, VCC = 5V10%)


Item Cycle Time Address Access Time Output Hold Time After Address Change Chip Enable Access Time Output Enable/Chip Select Access Time Output Low Z Delay Output High Z Delay BYTE Access Time BYTE Output Hold Time BYTE Output Delay Time BYTE Output Set Time tLZ tHZ tBHA tOHB tBHZ tBLZ 0ns 0ns 10ns 70ns 150ns 70ns 0ns 0ns 10ns 70ns 200ns 70ns Note 3 Note 4 tACE tAOE 150ns 80ns 200ns 90ns Symbol tCYC tAA tOH 23C2100-15 MIN. 150ns 0ns MAX. 150ns 23C2100-20 MIN. 200ns 0ns MAX. 200ns CONDITIONS

Note: 1. Measured with device selected at f=5 MHz and output unloaded. 2. This parameter is periodically sampled and is not 100% tested. 3. Output low-impedance delay (tLZ) is measured from CE going low. 4. Output high-impedance delay (tHZ) is measured from CE going high.

AC Test Conditions
Input Pulse Levels Input Rise and Fall Times Input Timing Level Output Timing Level Output Load 0.4V~ 2.4V 10ns 1.5V 0.8V and 2.0V 1TLL+100pF

P/N:PM0134

REV. 2.2, JAN. 29, 1999

INDEX

MX23C2100
TIMING DIAGRAM
PROPAGATION DELAY FROM ADDRESS (CE/OE=ACTIVE)
tCYC ADDRESS INPUTS tAA DATA OUT

VALID ADDRESS tOH VALID DATA

PROPAGATION DELAY FROM CHIP ENABLE (ADDRESS VALID)

CE

tACE

OE

tAOE

tLZ tHZ DATA OUT

PROPAGATION DELAY FROM CHIP ENABLE (ADDRESS VALID)


HIGH-Z tAA BYTE tOH HIGH-Z

A-1

D0-D7

VALID DATA tBHA tOHB

VALID DATA

D15-D8 tBHZ tBLZ

VALID DATA

P/N:PM0134

REV. 2.2, JAN. 29, 1999

INDEX

MX23C2100
ORDER INFORMATION
Part No. MX23C2100PC-12 MX23C2100PC-15 Access Time 150ns 200ns Operating Current MAX. 60mA 60mA Standby Current MAX. 100uA 100uA Package 40 Pin DIP 40 pin DIP

REVISION HISTORY
REVISION 2.2 DESCRIPTION AC CHARACTERISTICS tOH 10ns-->0ns PAGE P3 DATE JAN/29/1999

P/N:PM0134

REV. 2.2, JAN. 29, 1999

INDEX

MX23C2100
PACKAGE INFORMATION
40-PIN PLASTIC DIP (600 mil)

ITEM A B C D E F G H I J K L M

MILLIMETERS 52.54 max. 2.03 [REF] 2.54 [TP] .46 [Typ.] 48.22 1.52 [Typ.] 3.30.25 .51 [REF] 3.94.25 5.33 max. 15.22.25 13.97.25 .25 [Typ.]

INCHES 2.070 max. .080 [REF] .100 [TP] .018 [Typ.] 1.900 .060 [Typ.] .130.010 .020 [REF] 1.55.010 .210 max. .600.010 .550.010 .010 [Typ.]
F D E C B M H G I J 1 A K L 20 40 21

0~15

NOTE: Each lead centerline is located within .25 mm[.01 inch] of its true position [TP] at maximum material condition.

P/N:PM0134

REV. 2.2, JAN. 29, 1999

INDEX

MX23C2100

MACRONIX INTERNATIONAL CO., LTD.


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