ACT03 - Band Gap

ACTIVITY 03: BAND GAP
OBJECTIVES:
• To determine the energy band gap of a semiconductor PN junction diode in a simulation

experiment.
• To observe and account for the relationship of temperature and current.
THEORY:
A semi-conductor (either doped or intrinsic) always possesses an energy gap between its valence and
conduction bands (Figure 1). For the conduction of electricity, a certain amount of energy is to be given
to the electron so that it can jump from the valence band to the conduction band. The energy so needed
is the measure of the energy gap (𝐸𝑔 ) between the top and bottom of valence and conduction bands
respectively. In case of insulators, the value of 𝐸𝑔 varies from 3 to 7 eV. However, for semiconductors, it
is quite small. For example, in case of germanium, 𝐸𝑔 = 0.72 eV and in case of silicon, 𝐸𝑔 = 1.1 eV.
Figure 1. Energy Gap in Metals, Semi-conductors and Insulators
In semi-conductors at low temperatures, there are few charge carriers to move, so conductivity is quite
low. However, with increase in temperature, a greater number of charge carriers get sufficient energy to
be excited to the conduction band. This lead to increase in the number of free charge carriers and hence
increase in conductivity. In addition to the dependence of the electrical conductivity on the number of
free charges, it also depends on their mobility. The mobility of the charge carriers, however, decreases
with increasing temperature. But on the average, the conductivity of the semiconductors rises with rise
in temperature.
To determine the energy band gap of a semi-conducting material, we study the variation of its
conductance with temperature. In reverse bias, the current flowing through the PN junction is quite small
and internal heating of the junction does not take place.
When PN junction is placed in reverse bias as shown in Figure 2(a), the current flows through the junction
due to minority charge carriers only. The concentration of these charge carriers depends on band gap 𝐸𝑔 .
The saturation value, 𝐼𝑠 of reverse current depends on the temperature of junction diode and it is given
by the following equation,
𝐸𝑔
𝐼𝑠 = 𝐴(𝑁𝑛 𝑣𝑛 + 𝑁𝑝 𝑣𝑝 )𝑒 −𝑘𝑇
where,
𝑁𝑛 (𝑁𝑝 ) is the concentration of electrons (holes) in N(P)-type region,

𝑣𝑛 and 𝑣𝑝 are the drift velocities of electrons and holes respectively,
𝐴 is the are of the junction,
𝑘 = 1.38 × 10−23 𝐽/𝐾, is the Boltzman’s constant, and
𝑇 is the absolute temperature of the junction.
Taking the log of both sides of above equation, we have
𝐸𝑔
log 𝑒 𝐼𝑠 = log 𝑒 𝐴(𝑁𝑛 𝑣𝑛 + 𝑁𝑝 𝑣𝑝 ) −
𝑘𝑇
𝐸𝑔
2.303 log10 𝐼𝑠 = 2.303 log10 𝐴(𝑁𝑛 𝑣𝑛 + 𝑁𝑝 𝑣𝑝 ) −
𝑘𝑇
𝐸𝑔
log10 𝐼𝑠 = 𝐶 −
2.303 𝑘𝑇
On substituting the value of 𝑘 and converting the units of 𝐸𝑔 from eV to Joules, we get
1.6 × 10−19 𝐸𝑔
(2.303)(1.38 × 10−23 ) 𝑘𝑇
5.036 × 103 𝐸𝑔
𝑇
Which can be expressed as,
103
log10 𝐼𝑠 = 𝐶 + (−5.036 𝐸𝑔 )
𝑇
This represents the equation of a straight line having negative slope (5.036 𝐸𝑔 ) for the graph drawn
103
between log10 𝐼𝑠 and 𝑇
. Therefore, by knowing the slope of the line, 𝐸𝑔 can be determined through the
formula,
𝑠𝑙𝑜𝑝𝑒 = 5.036 𝐸𝑔
𝒔𝒍𝒐𝒑𝒆
𝑬𝒈 =
𝟓. 𝟎𝟑𝟔
Figure 2. (a) Reverse-biased PN junction diode, (b) Experimental Set-up

PROCEDURE:
1. Go to Virtual Labs – Energy Band Gap Simulation using the link:
http://vlabs.iitb.ac.in/vlabs-dev/labs/physics-basics/labs/energy-band-gap-iitk/simulation.html
2. Click ENABLE POWER and select Image 2 on the prompt question that will appear. Click OK and
close the prompt message.
3. Click PLACE CONTAINER and click on the blank simulator page. (You should be able to see the
container after)
4. Place the remaining components by clicking each component and clicking on the simulator page.
You should be able to get the same set-up as Figure 3.
Figure 3. Virtual Lab Experimental Set-up
5. Set the voltage at 1.0 V

6. Slide the temperature at 100 °C
7. Click FIND HERE to get the value of the Reverse Saturation Current, in mA
8. Repeat procedures 5 to 7, varying the temperatures 5°C less until you reach 65°C.
9. Input your data inside the OBSERVATIONS table provided at the bottom of Virtual Labs page.
(Take note of the units used)
103
10. Click calculate data, and plot the graph between log10 𝐼𝑠 and using a scattered diagram in
𝑇
Microsoft excel.
11. Generate a trendline for the graph produced and record the slope of the linear equation of the
trendline.
12. Solve for the Energy band gap using the formula derived in the THEORY section of this paper.
DATA AND RESULTS:

Table 1. Data from Virtual Labs Simulation
Temperature Temperature Current, 𝐼𝑠 103

No. log10 𝐼𝑠
(℃) (𝐾) (μA) 𝑇
1 100
2 95
3 90
4 85
5 80
6 75
7 70
8 65
103
FIGURE 4. Graph of log10 𝐼𝑠 vs.
𝑇
(5 points)
Computation: (5 points)
𝑠𝑙𝑜𝑝𝑒
Band gap, 𝐸𝑔 = 5.036
= _______________ 𝑒𝑉
CONCLUSION: (20 points)

[Input your conclusions here]
FOLLOW-UP QUESTIONS:
1. What happens to the saturation current of as the temperature is increased? (5 pts)

2. If the voltage is increased to 5.0 V, what will happen to the saturation current? What would
happen to the band gap? Support your answers with an explanation. (15 pts)

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ACTIVITY 03: BAND GAP

• To determine the energy band gap of a semiconductor PN junction diode in a simulation

Figure 1. Energy Gap in Metals, Semi-conductors and Insulators

𝑁𝑛 (𝑁𝑝 ) is the concentration of electrons (holes) in N(P)-type region,

Taking the log of both sides of above equation, we have

Figure 2. (a) Reverse-biased PN junction diode, (b) Experimental Set-up

Figure 3. Virtual Lab Experimental Set-up

5. Set the voltage at 1.0 V

DATA AND RESULTS:

Temperature Temperature Current, 𝐼𝑠 103

CONCLUSION: (20 points)

1. What happens to the saturation current of as the temperature is increased? (5 pts)

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