GD50PJX65L3S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD50PJX65L3S
650V/50A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 6μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated heatsink using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

©2018 STARPOWER Semiconductor Ltd. 2/9/2018 1/13 Preliminary

GD50PJX65L3S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 650 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 91
IC A
@ TC=100oC 50
ICM Pulsed Collector Current tp=1ms 100 A
PD Maximum Power Dissipation @ Tj=175oC 264 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 650 V
IF Diode Continuous Forward Current 50 A
IFM Diode Maximum Forward Current tp=1ms 100 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 50 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45oC 320 A
I2t I2t-value,VR=0V,tp=10ms,Tj=45oC 510 A2s

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 650 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 91
IC A
@ TC=100oC 50
ICM Pulsed Collector Current tp=1ms 100 A
PD Maximum Power Dissipation @ Tj=175oC 264 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 650 V
IF Diode Continuous Forward Current 15 A
IFM Diode Maximum Forward Current tp=1ms 30 A

Module
Symbol Description Value Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD50PJX65L3S IGBT Module

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=50A,VGE=15V,
1.45 1.90
Tj=25oC
Collector to Emitter IC=50A,VGE=15V,
VCE(sat) 1.60 V
Saturation Voltage Tj=125oC
IC=50A,VGE=15V,
1.70
Tj=150oC
Gate-Emitter Threshold IC=0.80mA,VCE=VGE,
VGE(th) 5.1 5.8 6.5 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 5.80 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.11 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.35 uC
td(on) Turn-On Delay Time 18 ns
tr Rise Time 15 ns
td(off) Turn-Off Delay Time 136 ns
VCC=300V,IC=50A,
tf Fall Time 24 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25oC 0.32 mJ
Loss
Turn-Off Switching
Eoff 0.96 mJ
Loss
td(on) Turn-On Delay Time 18 ns
tr Rise Time 18 ns
td(off) Turn-Off Delay Time 152 ns
VCC=300V,IC=50A,
tf Fall Time 32 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 0.46 mJ
Loss
Turn-Off Switching
Eoff 1.28 mJ
Loss
td(on) Turn-On Delay Time 18 ns
tr Rise Time 18 ns
td(off) Turn-Off Delay Time 160 ns
VCC=300V,IC=50A,
tf Fall Time 40 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 0.51 mJ
Loss
Turn-Off Switching
Eoff 1.36 mJ
Loss
tP≤6μs,VGE=15V,
ISC SC Data Tj=150 oC,VCC=300V, 250 A
VCEM≤600V

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GD50PJX65L3S IGBT Module

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=50A,VGE=0V,Tj=25oC 1.55 2.05
Diode Forward
VF IF=50A,VGE=0V,Tj=125oC 1.50 V
Voltage
IF=50A,VGE=0V,Tj=150oC 1.45
Qr Recovered Charge 2.2 μC
Peak Reverse VR=300V,IF=50A,
IRM 55 A
Recovery Current -di/dt=2420A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.55 mJ
Energy
Qr Recovered Charge 4.3 μC
Peak Reverse VR=300V,IF=50A,
IRM 66 A
Recovery Current -di/dt=2420A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 1.10 mJ
Energy
Qr Recovered Charge 4.8 μC
Peak Reverse VR=300V,IF=50A,
IRM 72 A
Recovery Current -di/dt=2420A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 1.27 mJ
Energy

Diode-rectifier Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=50A,Tj=150oC 1.15 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 2.0 mA

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GD50PJX65L3S IGBT Module

IGBT-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=50A,VGE=15V,
1.45 1.90
Tj=25oC
Collector to Emitter IC=50A,VGE=15V,
VCE(sat) 1.60 V
Saturation Voltage Tj=125oC
IC=50A,VGE=15V,
1.70
Tj=150oC
Gate-Emitter Threshold IC=0.80mA,VCE=VGE,
VGE(th) 5.1 5.8 6.5 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 5.80 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.11 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.35 uC
td(on) Turn-On Delay Time 18 ns
tr Rise Time 15 ns
td(off) Turn-Off Delay Time 136 ns
VCC=300V,IC=50A,
tf Fall Time 24 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25oC 0.32 mJ
Loss
Turn-Off Switching
Eoff 0.96 mJ
Loss
td(on) Turn-On Delay Time 18 ns
tr Rise Time 18 ns
td(off) Turn-Off Delay Time 152 ns
VCC=300V,IC=50A,
tf Fall Time 32 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 0.46 mJ
Loss
Turn-Off Switching
Eoff 1.28 mJ
Loss
td(on) Turn-On Delay Time 18 ns
tr Rise Time 18 ns
td(off) Turn-Off Delay Time 160 ns
VCC=300V,IC=50A,
tf Fall Time 40 ns
RG=6.8Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 0.51 mJ
Loss
Turn-Off Switching
Eoff 1.36 mJ
Loss
tP≤6μs,VGE=15V,
ISC SC Data Tj=150 oC,VCC=300V, 250 A
VCEM≤600V

©2018 STARPOWER Semiconductor Ltd. 2/9/2018 5/13 Preliminary

GD50PJX65L3S IGBT Module

Diode-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
IC=15A,VGE=0V,Tj=25oC 1.60 2.05
Diode Forward
VF IC=15A,VGE=0V,Tj=125oC 1.55 V
Voltage
IC=15A,VGE=0V,Tj=150oC 1.50
Qr Recovered Charge 0.8 μC
Peak Reverse VR=300V,IF=15A,
IRM 23 A
Recovery Current -di/dt=1600A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.16 mJ
Energy
Qr Recovered Charge 1.4 μC
Peak Reverse VR=300V,IF=15A,
IRM 25 A
Recovery Current -di/dt=1600A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 0.28 mJ
Energy
Qr Recovered Charge 1.7 μC
Peak Reverse VR=300V,IF=15A,
IRM 26 A
Recovery Current -di/dt=1600A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 0.37 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]

©2018 STARPOWER Semiconductor Ltd. 2/9/2018 6/13 Preliminary

GD50PJX65L3S IGBT Module

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 30 nH
RCC’+EE’ 5.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 6.00
Junction-to-Case (per IGBT-inverter) 0.516 0.568
Junction-to-Case (per Diode-inverter) 0.859 0.945
RthJC Junction-to-Case (per Diode-rectifier) 0.749 0.824 K/W
Junction-to-Case (per IGBT-brake) 0.510 0.561
Junction-to-Case (per Diode-brake) 1.838 2.022
Case-to-Heatsink (per IGBT-inverter) 0.556
Case-to-Heatsink (per Diode-inverter) 0.926
Case-to-Heatsink (per Diode-rectifier) 0.807
RthCH K/W
Case-to-Heatsink (per IGBT-brake) 0.549
Case-to-Heatsink (per Diode-brake) 1.980
Case-to-Heatsink (per Module) 0.037
F Mounting Force Per Clamp 40 80 N
G Weight of Module 39 g

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 GD50PJX65L3S IGBT Module

100 100
VGE=15V VCE=20V

80 80

60 60
IC [A]

IC [A]
40 40

20 20
Tj=25℃
Tj=25℃
Tj=125℃
Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 5 6 7 8 9 10 11 12
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

3.5 6
Eon,Tj=125℃ Eon,Tj=125℃
Eoff,Tj=125℃
3 5
Eoff,Tj=125℃
Eon,Tj=150℃
Eon,Tj=150℃
Eoff,Tj=150℃
2.5 Eoff,Tj=150℃

VCC=300V 4
2 RG=6.8Ω
E [mJ]

E [mJ]

VGE=±15V
3
1.5
2
1

1 VCC=300V
0.5 IC=50A
VGE=±15V
0 0
0 20 40 60 80 100 0 10 20 30 40 50 60 70
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

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 GD50PJX65L3S IGBT Module

120 10

Module
100

80

ZthJH [K/W]
IGBT
IC [A]

60 1

40
RG=6.8Ω
VGE=±15V i: 1 2 3 4
20 Tj=150oC ri[K/W]: 0.0769 0.1488 0.4599 0.3864
τi[s]: 0.0005 0.005 0.05 0.2

0 0.1
0 150 300 450 600 750 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

100 1.8
Tj=25℃ Erec,Tj=125℃
Tj=125℃ 1.6
Erec,Tj=150℃
80 Tj=150℃
1.4

1.2
60
1
E [mJ]
IF [A]

0.8
40
0.6

20 0.4
VCC=300V
RG=6.8Ω
0.2
VGE=-15V
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 100
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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 GD50PJX65L3S IGBT Module

1.4 10
Erec,Tj=125℃
1.2 Erec,Tj=150℃

1 Diode

ZthJH [K/W]
0.8
E [mJ]

1
0.6

0.4
VCC=300V i: 1 2 3 4
ri[K/W]: 0.1283 0.2476 0.7657 0.6434
0.2 IF=50A τi[s]: 0.0005 0.005 0.05 0.2

VGE=-15V
0 0.1
0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

100 100
25℃
VGE=15V
125℃
80 80

60 60
IC [A]
IF [A]

40 40

20 20
Tj=25℃
Tj=125℃
Tj=150℃
0 0
0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 0.5 1 1.5 2 2.5 3
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

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 GD50PJX65L3S IGBT Module

30 100
Tj=25℃
Tj=125℃
25
Tj=150℃

20 10

R [kΩ]
IF [A]

15

10 1

0 0.1
0 0.5 1 1.5 2 2.5 0 30 60 90 120 150
VF [V] TC [oC]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

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GD50PJX65L3S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

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GD50PJX65L3S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
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application.

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granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
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characteristics.

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or which concerns the specific application of our product, please contact the sales office,
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interested we may provide application notes.

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information on the types in question please contact the sales office, which is responsible for
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©2018 STARPOWER Semiconductor Ltd. 2/9/2018 13/13 Preliminary