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2SB1197-MarkingCode AHp

This document provides specifications for the BL Galaxy Electrical 2SB1197 silicon epitaxial planar transistor. It is a small surface mount transistor suitable for high density packing. It has a peak current of 1000mA, operates at low voltages up to 40V, and has high saturation current capability, making it suitable for use in telephone equipment and other switching applications. The document provides maximum ratings, electrical characteristics, typical characteristics curves, package outline details, and shipping information for the 2SB1197 transistor.

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74 views5 pages

2SB1197-MarkingCode AHp

This document provides specifications for the BL Galaxy Electrical 2SB1197 silicon epitaxial planar transistor. It is a small surface mount transistor suitable for high density packing. It has a peak current of 1000mA, operates at low voltages up to 40V, and has high saturation current capability, making it suitable for use in telephone equipment and other switching applications. The document provides maximum ratings, electrical characteristics, typical characteristics curves, package outline details, and shipping information for the 2SB1197 transistor.

Uploaded by

d4wq3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SB1197

FEATURES
Pb
z Small surface mounting type.
Lead-free
z Corredtor peak current(Max.=1000mA)
z Suitable for high packing density.
z Low voltage(Max.=40v)
z High saturation current capability.
z Voltage controlled small signal switch.
APPLICATIONS SOT-23
z Telephone and professional communication equipment.
z Other switching appilications.

ORDERING INFORMATION
Type No. Marking Package Code

2SB1197 AHP,AHQ,AHR SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -40 V

VCEO Collector-Emitter Voltage -32 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current DC -800 mA

ICM Peak Collector Current -1 A

IBM Peak Base Current -80 mA

PC Collector Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -65~150 ℃

Document number: BL/SSSTC016 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SB1197

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V

Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V

Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA

Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA

DC current gain hFE VCE=-3V,IC=-100mA 82 390

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.5 V

VCE=-5V, IC=-50mA
Transition frequency fT 50 MHz
f=100MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF

CLASSIFICATION OF hFE(1)
Range 82-180 120-270 180-390

Marking P Q R

Document number: BL/SSSTC016 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SB1197

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC016 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SB1197

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

2SB1197 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC016 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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